CN114361305A - Light emitting diode, preparation method thereof and display device - Google Patents
Light emitting diode, preparation method thereof and display device Download PDFInfo
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Abstract
The invention relates to a light-emitting diode, a preparation method thereof and a display device. The light emitting diode includes: a substrate; an oxygen-absorbing layer disposed on the substrate; a light emitting structure disposed on the oxygen absorbing layer; wherein the oxygen absorption layer is used for absorbing oxygen in a reaction device forming the light emitting structure so as to reduce oxygen pollution of the reaction device on the light emitting structure by the oxygen. The invention is beneficial to the brightness of the light-emitting diode, improves the luminous efficiency of the light-emitting diode, reduces the aging of the light-emitting diode and has great significance for improving the performance of the device.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a light emitting diode, a preparation method thereof and a display device.
Background
A Light-Emitting Diode (LED) is a semiconductor electronic device capable of Emitting Light. The LED display has the advantages of small volume, low energy consumption, long service life, low driving voltage and the like, and is widely applied to the fields of indicator lamps, backlight sources, display screens and the like. The pursuit of high brightness and high performance has become a trend, and the improvement of the light emitting efficiency of LED chips is urgent to meet the increasing demand. LED lighting has become a significant proposition to replace traditional lighting, and in the next few years LED lighting will have gone into a high-speed growth phase. In addition, a mini LED and a micro LED are also important development items in recent years, the key of the LED lies in the improvement of the blue-green red light LED epitaxial chip technology, and the breakthrough development of the technology drives the whole application and requirement to be improved. However, when the LED epitaxial chip is prepared, the LED epitaxial chip may absorb oxygen inside the reaction device, thereby causing oxygen contamination of the LED.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present application aims to provide a light emitting diode, a method for manufacturing the same, and a display device, and aims to solve the problem of oxygen contamination of the light emitting diode.
The present invention provides a light emitting diode, comprising:
a substrate;
an oxygen-absorbing layer disposed on the substrate;
a light emitting structure disposed on the oxygen absorbing layer;
wherein the oxygen absorbing layer is used for absorbing oxygen in a reaction device forming the light emitting structure.
The oxygen absorption layer is arranged in the light-emitting diode, so that oxygen in the reaction equipment can be effectively absorbed, the content of oxygen in the reaction equipment is reduced, oxygen pollution in the subsequent growth of a light-emitting structure is avoided, the brightness of the light-emitting diode is facilitated, the light-emitting efficiency of the light-emitting diode is improved, the aging of the light-emitting diode is reduced, and the light-emitting diode has great significance for improving the performance of devices.
Optionally, along a direction away from the oxygen-absorbing layer, the light-emitting structure includes a first confinement layer, a light-emitting layer, and a second confinement layer, which are stacked in sequence.
The light emitting layer can be supplied with electrons while preventing carriers from overflowing the light emitting layer by providing the first confinement layer and the second confinement layer.
Optionally, the first confinement layer includes an N-type AlInP confinement layer, and the second confinement layer includes a P-type AlInP confinement layer.
Optionally, the oxygen-absorbing layer comprises Alx1Ga1-x1As。
By using Alx1Ga1-x1The As oxygen absorption layer, wherein Al can effectively absorb oxygen in the reaction equipment, thereby achieving the purpose of reducing the oxygen content in the reaction chamber, avoiding oxygen pollution in the subsequent growth of AlInP in the luminescent structure and being beneficial toThe brightness of the light-emitting diode is improved, the light-emitting efficiency of the light-emitting diode is improved, the aging of the light-emitting diode is reduced, and the light-emitting diode has great significance for improving the performance of devices.
Optionally, the value of x1 is greater than 0.6.
Alx1Ga1-x1When the Al component content x1 in As is greater than 0.6, Alx1Ga1-x1As is a material with high Al component, has strong oxygen absorption capacity in reaction equipment, avoids oxygen pollution when a subsequent light-emitting structure is grown, is beneficial to the brightness of the light-emitting diode, improves the light-emitting efficiency of the light-emitting diode, reduces the aging of the light-emitting diode, and has great significance for improving the performance of devices.
Optionally, the light emitting structure further includes:
a buffer layer disposed on the oxygen absorbing layer;
a first structural layer disposed on the buffer layer, wherein the first confinement layer is disposed on the first structural layer;
and the second structural layer is arranged on the second limiting layer.
Based on the same conception, the invention provides a preparation method of a light-emitting diode, which comprises the following steps:
providing a substrate;
forming an oxygen absorption layer on the substrate;
forming a light emitting structure on the oxygen absorption layer;
wherein the oxygen absorbing layer is used for absorbing oxygen in a reaction device forming the light emitting structure.
By growing the oxygen absorption layer on the substrate and absorbing oxygen in the reaction equipment by adopting the oxygen absorption layer, the oxygen content in the reaction chamber is effectively reduced, oxygen pollution in the subsequent growth of the light-emitting structure is avoided, the brightness of the light-emitting diode is facilitated, the light-emitting efficiency of the light-emitting diode is improved, the aging of the light-emitting diode is reduced, and the oxygen absorption layer has great significance for improving the performance of the device.
Optionally, the forming an oxygen absorption layer on the substrate includes:
growing Al on the substrate in the reaction equipmentx1Ga1-x1An As oxygen-absorbing layer.
By using Alx1Ga1-x1The As oxygen absorption layer, wherein Al can effectively absorb oxygen in the reaction equipment, thereby achieving the purpose of reducing the oxygen content in the reaction chamber, avoiding oxygen pollution of a light-emitting structure in subsequent growth, being beneficial to the brightness of the light-emitting diode, improving the light-emitting efficiency of the light-emitting diode, reducing the aging of the light-emitting diode and having great significance for improving the performance of the device.
Optionally, the Alx1Ga1-x1The growth temperature of the As oxygen-absorbing layer comprises 660-720 ℃.
By setting the growth temperature of the oxygen absorption layer reasonably, the method is favorable for generating high-quality Alx1Ga1-x1The As oxygen absorption layer can effectively absorb oxygen in the reaction equipment.
Based on the same concept, the present invention provides a display device including:
a substrate;
a plurality of light emitting devices arranged in an array on the substrate, wherein the light emitting devices are the light emitting diodes of any of the above.
By adopting the display device formed based on the light emitting diode including the oxygen absorption layer, the luminance of the display device is facilitated, the light emitting efficiency is improved, the aging of the display device is reduced, and the display device has great significance in improving the device performance.
Drawings
Fig. 1 is a schematic structural diagram of a light emitting diode in an embodiment of the present application;
fig. 2 is a schematic structural diagram of a light emitting structure in an embodiment of the present application;
fig. 3 is a schematic structural diagram of a light emitting diode in an embodiment of the present application;
FIG. 4 is a schematic structural diagram of a first structural layer in an embodiment of the present application;
FIG. 5 is a schematic structural diagram of a second structural layer in an embodiment of the present application;
fig. 6 is a schematic structural diagram of a light emitting diode in an embodiment of the present application;
fig. 7 is a schematic flow chart of a method for manufacturing a light emitting diode in an embodiment of the present application.
Description of reference numerals:
1-a substrate; 2-oxygen absorbing layer; 3-a light emitting structure; 31-a first confinement layer; 32-a light-emitting layer; 33-a second confinement layer; 34 a buffer layer; 35-a first structural layer; 351-corrosion stop layer; 352-ohmic contact layer; 353-current spreading layer; 36-a second structural layer; 37-a first waveguide layer; 38-second waveguide layer.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
Currently, various oxygen-absorbing elements, such as Al, are doped in LED materials. When the light-emitting diode is prepared, oxygen absorption elements in the LED material can absorb oxygen of reaction equipment, so that oxygen pollution of the LED material is caused, chemical or physical properties such as the structure and stability of the LED material are changed, and the light-emitting performance of the LED is reduced. For example, AlGaInP and AlGaP materials containing Al are easily contaminated with oxygen during growth, resulting in oxygen that can form a deep level of non-radiative recombination in AlGaInP and AlGaP, such that the light emitting efficiency and device performance of LEDs formed based on AlGaInP and AlGaP are greatly reduced. Although there have been measures to reduce oxygen contamination, such as growing AlGaP and AlGaInP materials at high temperatures, too high a temperature causes instability of AlGaP and AlGaInP, resulting in changes in the composition of the material.
Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.
Referring to fig. 1, the present invention provides a light emitting diode, including: a substrate 1, an oxygen absorption layer 2 and a light-emitting structure 3; wherein, the oxygen absorbing layer 2 is arranged on the substrate 1, the light emitting structure 3 is arranged on the oxygen absorbing layer 2, and the oxygen absorbing layer 2 is used for absorbing oxygen in a reaction device forming the light emitting structure 3 so as to reduce oxygen pollution of the oxygen in the reaction device to the light emitting structure 3. Alternatively, substrate 1 includes, but is not limited to, sapphire, silicon, GaN, GaP, AlGaAs, GaAs, AlGaInP. Optionally, the crystal lattice of the substrate 1 is matched with the crystal lattice of the oxygen absorption layer 2, and by adopting a structure in which the crystal lattice of the substrate 1 is matched with the crystal lattice of the oxygen absorption layer 2, the problem of dislocation of the substrate 1 and the oxygen absorption layer 2 is avoided, and the formation of the oxygen absorption layer 2 and the light emitting structure 3 is facilitated. The material of the oxygen absorption layer 1 has strong oxygen absorption capacity, and no new impurity is introduced when the oxygen absorption layer material is used for preparing the light emitting diode, and the oxygen absorption layer material includes but is not limited to Al-containing materials, such as AlGaInP, AlGaP and the like.
In an embodiment, referring to fig. 2, the light emitting structure 3 includes a first confinement layer 31, a light emitting layer 32 and a second confinement layer 33 sequentially stacked along a direction away from the oxygen-absorbing layer 2. Wherein, in order to form the light emitting diode, the conductivity doping types of the first limiting layer 31 and the second limiting layer 33 are opposite; that is, if the first confinement layer 31 is a P-type doped layer, the second confinement layer 33 is an N-type doped layer, and if the first confinement layer 31 is an N-type doped layer, the second confinement layer 33 is a P-type doped layer. The light-emitting layer 32 includes a multiple quantum well layer, and radiative recombination of electrons and holes occurs in the light-emitting layer 32 to emit light. The first confinement layer 31 and the second confinement layer 33 are red, green and blue light emitting materials, and the first confinement layer 31 and the second confinement layer 33 include but are not limited to GaN, GaAs, GaAsP, InGaN, AlGaInP and AlGaP.
In one embodiment, the first confinement layer 31 comprises an N-type AlInP confinement layer, and the second confinement layer 33 comprises a P-type AlInP confinement layer. The oxygen absorbing layer 2 comprises Alx1Ga1-x1As, where x1 is greater than 0 and less than 1, e.g., x1 includes, but is not limited to, 0.05, 0.1, 0.15, 0.2, 0.25, 0.3,. eradiate, 0.9, 0.95. Optionally, the N-type AlInP confinement layer comprises Al0.5In0.5The P material and the P type AlInP limiting layer comprise Al0.5In0.5And P material. By using Alx1Ga1-x1The As oxygen absorption layer 2 can effectively absorb oxygen in the reaction equipment, reduce the content of oxygen in the reaction chamber, avoid oxygen pollution in the subsequent growth of the AlInP in the light-emitting structure 3, facilitate the brightness of the light-emitting diode, improve the light-emitting efficiency of the light-emitting diode, reduce the aging of the light-emitting diode and have great significance for improving the performance of the device.
In one embodiment, x1 is greater than 0.6, Alx1Ga1-x1When the Al component content x1 in As is greater than 0.6, Alx1Ga1-x1As is a material with high Al component, has strong oxygen absorption capacity in reaction equipment, avoids oxygen pollution when a subsequent light-emitting structure is grown, is beneficial to the brightness of the light-emitting diode, improves the light-emitting efficiency of the light-emitting diode, reduces the aging of the light-emitting diode, and has great significance for improving the performance of devices.
In one embodiment, substrate 1 comprises GaAs, x1 < 0.9, when Alx1Ga1-x1When the content of Al component in As is less than 0.9, the crystal lattice thereof matches with that of GaAs substrate, so that in order to avoid the crystal lattice dislocation between the substrate 1 and the oxygen-absorbing layer 2, an oxygen-absorbing layer Al is providedx1Ga1-x1The Al component content in As is less than 0.9, which is beneficial to the formation of the oxygen absorbing layer 2 and the light-emitting structure 3.
In an embodiment, the substrate 1 comprises GaAs, Alx1Ga1-x1The content of Al in As is more than 0.6 and less than 0.9 and x1x1Ga1-x1When the Al content in As is less than 0.9, the crystal lattice of As is matched with the crystal lattice of GaAs substrate, so that the problem of dislocation between the substrate 1 and the oxygen absorption layer 2 is avoided, and when the Al content is more than 0.6 and less than x1 and less than 0.9, the Al content is more than 0.6 and less than x1 and less than 0.9x1Ga1-x1As is a high Al component, has strong oxygen absorption capacity in the reaction equipment, avoids oxygen pollution when growing the subsequent light-emitting structure 3, is beneficial to the brightness of the light-emitting diode, improves the light-emitting efficiency of the light-emitting diode, reduces the aging of the light-emitting diode and has great significance for improving the performance of the device.
In an embodiment, referring to fig. 3, the light emitting structure 3 further includes: a buffer layer 34 provided on the oxygen absorbing layer 2; a first structural layer 35 disposed on the buffer layer 34, wherein the first confinement layer 31 is disposed on the first structural layer 35; and a second structural layer 36 disposed on the second confinement layer 33. By providing the buffer layer 34 on the oxygen absorbing layer 2, the growth of the first structural layer 35, the first confinement layer 31, the light-emitting layer 32, the second confinement layer 33, and the second structural layer 36 provided over the buffer layer 34 is facilitated. Wherein, the lattice quality of the buffer layer 34 is better than that of the substrate 1, and the influence of the substrate 1 can be eliminated, and the buffer layer 34 includes but is not limited to GaN, GaP, AlGaAs, GaAs, AlGaInP. The buffer layer 34 is provided to facilitate crystal growth of a subsequent structure, and the buffer layer 34 and the first confinement layer 31 have the same conductive doping type, that is, if the first confinement layer 31 is a P-type doping layer, the buffer layer 34 is a P-type doping layer, and if the first confinement layer 31 is an N-type doping layer, the buffer layer is an N-type doping layer. The first structure layer 35 has the same conductivity type as the first confinement layer 31, and the second structure layer 35 has the same conductivity type as the second confinement layer 33.
In one embodiment, referring to fig. 4, the first structural layer 35 includes a corrosion stop layer 351, an ohmic contact layer 352 and a current spreading layer 353 sequentially stacked along a direction away from the oxygen-absorbing layer 2. The etch stop layer 351 is a barrier layer of the chip etch substrate, and the etch stop layer 351 includes, but is not limited to, AlGaInP and GaInP. The ohmic contact layer 352 is in ohmic contact with the electrode, and the ohmic contact layer 352 includes but is not limited to GaN, GaAs, GaAsP. Current spreading may be increased by providing current spreading layers 353, the current spreading layers 353 including but not limited to AlGaAs, GaInP.
In one embodiment, referring to fig. 5, the second structural layer 36 includes a transition layer 361 and a window layer 362 sequentially stacked along a direction away from the oxygen-absorbing layer 2, and the transition layer 361 is disposed on the second confinement layer 33. The transition layer 361 facilitates the nucleation of the window layer 362. Optionally, the window layer 362 is a light emitting layer and forms an ohmic contact with the electrode. The conductivity doping types of the transition layer 361, the window layer 362 and the second confinement layer 33 are the same, the transition layer 361 includes, but is not limited to, AlGaInP, AlGaAs, GaInP, and the window layer 362 includes GaAsP, GaP.
In an embodiment, referring to fig. 6, the light emitting structure 3 further includes: a first waveguide layer 37 and a second waveguide layer 38, the first waveguide layer 37 being disposed on the first confinement layer 31, the second waveguide layer 38 being disposed on the light-emitting layer 32. Diffusion of impurities into the light-emitting layer 32 is prevented by providing the first waveguide layer 37 and the second waveguide layer 38. Illustratively, along the growth direction of the light emitting diode, the light emitting diode includes a substrate 1, an oxygen-absorbing layer 2, a buffer layer 34, an etch stop layer 351, an ohmic contact layer 352, a current spreading layer 353, a first confinement layer 31, a first waveguide layer 37, a light emitting layer 32, a second waveguide layer 38, a second confinement layer 33, a transition layer 361, and a window layer 362, which are sequentially stacked. Wherein, the growth direction of the light emitting diode is far away from the oxygen absorption layer. The first and second light-emitting layers 37 and 38 serve to prevent impurities from diffusing into the light-emitting layer 32. The materials of the first waveguide layer 37 and the second waveguide layer 38 include AlGaAs, AlGaInP, and GaInP.
In one embodiment, referring to FIG. 6, along the growth direction of the LED, the LED comprises a GaAs substrate 1 and Alx1Ga1-x1As oxygen-absorbing layer 2, GaAs buffer layer 34, Ga0.5In0.5P-etch stop layer 351, GaAs ohmic contact layer 352, and Alx2Ga1-x2InP Current spreading layer 353, Al0.5In0.5P first confinement layer 31, Alx3Ga1-x3InP first waveguide layer 37, light-emitting layer 32, Alx3Ga1-x3InP second waveguide layer 38, Al0.5In0.5P second confinement layer 33, (Al)x4Ga1-x4)0.5In0.5 A P transition layer 361 and a GaP window layer 362; wherein, GaAs substrate 1, Alx1Ga1-x1As oxygen-absorbing layer 2, GaAs buffer layer 34, Ga0.5In0.5P-etch stop layer 351, GaAs ohmic contact layer 352, and Alx2Ga1-x2InP current spreading layer 353 and Al0.5In0.5The P first confinement layers 31 are all doped in an N type; al (Al)0.5In0.5P second confinement layer 33, (Al)x4Ga1-x4)0.5In0.5Both the P transition layer 361 and the GaP window layer 362 are P-type doped. Optionally, Alx1Ga1-x1The thickness of the As oxygen absorption layer 2 comprises 100-200nm, the doping element comprises Si, and the doping concentration range comprises 1E18-2E18cm-3X1 is more than 0.6 and less than 0.9, and oxygen in the reaction equipment forming the light-emitting structure 3 can be absorbed by arranging the oxygen absorption layer 2 so as to reduce oxygen pollution of the oxygen in the reaction equipment to the light-emitting structure 3; the GaAs buffer layer 34 has a thickness of 100-200nm, a doping element including Si, and a doping concentration range including 1E18-2E18cm-3The provision of the buffer layer 34 facilitates the crystal growth of the light-emitting structure 3 to be formed subsequently after the buffer layer 34; ga0.5In0.5The thickness of the P-etch stop layer 351 comprises 100-200nm, the doping element comprises Si, and the doping concentration range comprises 1E18-2E18cm-3The etching stop layer 351 is a barrier layer of the chip etching substrate; the thickness of the GaAs ohmic contact layer 352 comprises 600-100nm, the doping element comprises Si, and the doping concentration range comprises 3E18-4E18cm-3The ohmic contact layer 352 is in ohmic contact with the electrode; al (Al)x2Ga1-x2The thickness of the InP current spreading layer 353 comprises 2800-3200nm, the doping element comprises Si, and the doping concentration range comprises 1E18-2E18cm-30.3 < x2 < 0.6, the current spreading layer 353 can increase current spreading; al (Al)0.5In0.5The thickness of the P first confinement layer 31 comprises 300-400nm, the doping element comprises Si, and the doping concentration range comprises 7E17-1.5E18cm-3The first confinement layer 31 is used to supply electrons to the light-emitting layer 32 while preventing carriers from overflowing the light-emitting layer 32; al (Al)x3Ga1-x3The thickness of the InP first waveguide layer 37 comprises 600-100nm, 0.5 < x3 < 0.7, and is undoped, and the first waveguide layer 37 is used for preventing impurities from diffusing into the light-emitting layer 32; the light-emitting layer 32 is a multiple quantum well layer, and electrons and holes in the light-emitting layer 32 generate radiative recombination and emit light; al (Al)x3Ga1-x3The thickness of the InP second waveguide layer 38 comprises 600-100nm, 0.5 < x3 < 0.7, and is undoped, and the second waveguide layer 38 is used for preventing impurities from diffusing into the light-emitting layer 32; al (Al)0.5In0.5The thickness of the P second confinement layer 33 comprises 300-400nm, the doping element comprises Mg, and the doping concentration range comprises 5E17-1E18cm-3The second confinement layer 33 is used to supply electrons to the light-emitting layer 32 while preventing carriers from overflowing the light-emitting layer 32; (Al)x4Ga1-x4)0.5In0.5P isThe thickness of the transition layer 361 is 30-50nm, the doping element comprises Mg, and the doping concentration range comprises 1E18-3E18cm-3X4 is more than 0.2 and less than 0.4, and the transition layer 361 is arranged to facilitate the crystal growth of the window layer 362; the thickness of the GaP window layer 362 comprises 800-1200nm, the doping element comprises Mg, and the doping concentration range comprises 1E18-3E18cm-3. The oxygen absorption layer 2 is arranged in the light-emitting diode, so that oxygen in the reaction equipment can be effectively absorbed, the content of oxygen in the reaction equipment is reduced, oxygen pollution in the subsequent growth of the light-emitting structure 3 is avoided, the brightness of the light-emitting diode is facilitated, the light-emitting efficiency of the light-emitting diode is improved, the aging of the light-emitting diode is reduced, and the light-emitting diode has great significance for improving the performance of devices.
Based on the same concept as the light emitting diode, the present invention further provides a method for manufacturing a light emitting diode, and referring to fig. 7, the method for manufacturing a light emitting diode includes:
step S110, providing a substrate;
step S120, forming an oxygen absorption layer on the substrate;
in step S130, a light emitting structure is formed on the oxygen absorption layer.
In step S110 of the present embodiment, the substrate includes, but is not limited to, sapphire, silicon, GaN, GaP, AlGaAs, GaAs, AlGaInP. The substrate may be cleaned with an organic solvent and an acid solution, or may be subjected to a high temperature treatment to clean the surface of the substrate.
In step S120 of this embodiment, the oxygen absorption layer is used to absorb oxygen in the reaction device forming the light emitting structure, so as to reduce the pollution of the light emitting structure by the oxygen in the reaction device. The material of the oxygen absorption layer has stronger oxygen absorption capacity, new impurities cannot be introduced when the oxygen absorption layer material is adopted for preparing the light-emitting diode, and the oxygen absorption layer material comprises but is not limited to Al-containing materials, such as AlGaInP, AlGaP and the like; by forming the oxygen absorption layer, oxygen in the reaction equipment can be effectively absorbed, the content of oxygen in the reaction chamber is reduced, oxygen pollution in the subsequent growth of the light-emitting structure is avoided, the brightness of the light-emitting diode is facilitated, the light-emitting efficiency of the light-emitting diode is improved, the aging of the light-emitting diode is reduced, and the oxygen absorption layer has great significance for improving the performance of devices. Optionally, the lattice of the formed oxygen absorption layer is matched with the lattice of the substrate, and the structure that the lattice of the substrate is matched with the lattice of the oxygen absorption layer is adopted, so that the problem of dislocation of the substrate and the oxygen absorption layer is avoided, and the formation of the oxygen absorption layer and the light-emitting structure is facilitated.
In one embodiment, the oxygen gettering layer comprises Alx1Ga1-x1As, where x1 includes, but is not limited to, 0.1, 0.2, 0.3,. ·, 0.9, 0.95. The oxygen-absorbing layer may be formed on the substrate by Vapor Deposition, for example, by Chemical Vapor Deposition (CVD), which refers to a method of synthesizing a coating or a nanomaterial by reacting Chemical gas or Vapor on the surface of a substrate, or by Physical Vapor Deposition (PVD), which refers to a technique of vaporizing the surface of a material source (solid or liquid) into gaseous atoms or molecules or partially ionizing into ions by a Physical method under vacuum conditions, and depositing a thin film on the surface of the substrate by a low-pressure gas (or plasma) process.
In one embodiment, Metal-organic Chemical Vapor Deposition (MOCVD) is used to form Al on a substratex1Ga1-x1An As oxygen gettering layer, wherein CVD includes MOCVD. Al (Al)x1Ga1- xThe preparation method of the 1As oxygen absorption layer comprises the following steps: in the reaction equipment, arsine is used as a V source, and hydrogen is used as carrier gas to introduce trimethyl aluminum and trimethyl gallium, so that Al is formed on the substrate in a growing wayx1Ga1-x1An As oxygen-absorbing layer. Optionally, high quality Al is formed for growthx1Ga1- x1As oxygen-absorbing layer, Alx1Ga1-x1The growth temperature of the As oxygen-absorbing layer comprises 660-720 ℃. Optionally, high quality Al is formed for growthx1Ga1-x1As oxygen-absorbing layer, Alx1Ga1-x1The growth pressure of the As oxygen-absorbing layer comprises 40-60 mbar. Optionally, to facilitate subsequent growth of the light emitting structure, Alx1Ga1-x1The thickness of the As oxygen-absorbing layer comprises 100-200 nm.
In one embodiment, the substrate comprises N-type GsAs, and the N-type Al can be formed on the N-type GsAs substrate by vapor depositionx1Ga1-x1An As oxygen-absorbing layer. Optionally, MOCVD is used to form N-type Al on the substratex1Ga1-x1The preparation method of the As oxygen absorption layer comprises the following steps: in the reaction equipment, arsine is used as a V source, and hydrogen is used as carrier gas to introduce trimethyl aluminum and trimethyl gallium, so that Al is formed on the substrate in a growing wayx1Ga1-x1As oxygen-absorbing layer of SiH4For N-type doping source, forming N-Alx1Ga1-x1An As oxygen-absorbing layer. Optionally, x1 < 0.9, when Alx1Ga1-x1When the Al component content in As is less than 0.9, the crystal lattice thereof matches with that of GaAs substrate, and therefore, the oxygen-absorbing layer Alx1Ga1-x1The Al component content in As is less than 0.9, which is beneficial to the formation of an oxygen absorption layer and a luminous structure.
In one embodiment, Al may be increased by increasing Alx1Ga1-x1The Al component content in the As oxygen absorption layer is used for improving the oxygen absorption capacity of the oxygen absorption layer, so that Al with stronger oxygen absorption capacity is obtainedx1Ga1-x1As oxygen-absorbing layer, Alx1Ga1-x1The Al content of As includes x1 > 0.6, in which case Alx1Ga1-x1As is high in Al component content, can effectively absorb oxygen in reaction equipment, reduces the oxygen content in a reaction chamber, avoids oxygen pollution in subsequent growth of a light-emitting structure, is beneficial to the brightness of the light-emitting diode, improves the light-emitting efficiency of the light-emitting diode, reduces the aging of the light-emitting diode, and has great significance for improving the performance of devices. Optionally, arsine is not completely decomposed at a pressure of 40-60mbar and a temperature of 660-x1Ga1-x1As oxygen-gettering layer, the flow ratio of V/III, where V is arsine and III is trimethylaluminum and trimethylgallium, is thus 150-. Optionally, the flow rate range of trimethylaluminum comprises 152-3The flow range of (1) comprises 800-x1Ga1-x1The Al component in the As oxygen absorption layer comprises 0.6-0.9.
In step S130 of this embodiment, a method for forming a light emitting structure on an oxygen absorption layer includes: forming a first confinement layer on the oxygen-absorbing layer, a light-emitting layer on the first confinement layer, and a second confinement layer on the light-emitting layer; the first limiting layer and the second limiting layer are opposite in conductive doping type, the light emitting layer comprises a multi-quantum well layer, and electrons and holes in the light emitting layer generate radiative recombination light emission. The first and second confinement layers are red, green and blue light emitting materials, and include but not limited to GaN, GaAs, GaAsP, InGaN, AlGaInP, AlGaP. The first confinement layer, the light-emitting layer, and the second confinement layer may be formed by vapor deposition.
In one embodiment, the method for forming a light emitting structure on an oxygen absorption layer further includes: forming a buffer layer on the oxygen absorption layer, forming a first confinement layer on the buffer layer, forming a light emitting layer on the first confinement layer, and forming a second confinement layer on the light emitting layer; the lattice quality of the buffer layer 34 is better than that of the substrate 1, and the influence of the substrate can be eliminated; buffer layers including but not limited to GaN, GaP, AlGaAs, GaAs, AlGaInP, by the growth of subsequent structures provided with buffer layers; the buffer layer may be formed by means of vapor deposition.
In one embodiment, the method for forming a light emitting structure on an oxygen absorption layer further includes: forming a buffer layer on the oxygen absorption layer, forming a first structural layer on the buffer layer, forming a first confinement layer on the first structural layer, forming a light emitting layer on the first confinement layer, forming a second confinement layer on the light emitting layer, and forming a second structural layer on the second confinement layer; the first structural layer and the second structural layer may be formed by means of vapor deposition. The conductive doping type of the first structural layer is the same as that of the first limiting layer, and the conductive doping type of the second structural layer is the same as that of the second limiting layer; the first structural layer and the second structural layer may be formed by means of vapor deposition.
In one embodiment, a method of forming a first structural layer on a buffer layer includes: an etch stop layer is formed on the buffer layer, an ohmic contact layer is formed on the etch stop layer, and a current spreading layer is formed on the ohmic contact layer. The corrosion stop layer is a barrier layer of the chip corrosion substrate, and the corrosion stop layer comprises but is not limited to AlGaInP and GaInP. The ohmic contact layer is in ohmic contact with the electrode, and the ohmic contact layer includes but is not limited to GaN, GaAs, and GaAsP. Current spreading can be increased by providing current spreading layers including, but not limited to, AlGaAs, GaInP. The conductive doping type of the corrosion cut-off layer, the ohmic contact layer and the current expansion layer is the same as that of the first limiting layer; the etch stop layer, the ohmic contact layer, and the current spreading layer may be formed by vapor deposition.
In one embodiment, the method for forming the second structural layer on the second confinement layer includes: forming a transition layer on the second limiting layer, and forming a window layer on the transition layer; the transition layer is beneficial to crystal growth of the window layer; transition layer 3 the window layer and the second confinement layer have the same conductive doping type, the transition layer includes but is not limited to AlGaInP, AlGaAs, GaInP, the window layer includes GaAsP, GaP; optionally, the window layer is a light emitting layer and forms ohmic contact with the electrode; the transition layer and the window layer may be formed by means of vapor deposition.
In one embodiment, the method for forming a light emitting structure on an oxygen absorption layer further includes: a first waveguide layer is formed on the first confinement layer, a light-emitting layer is formed on the first waveguide layer, a second waveguide layer is formed on the light-emitting layer, and a second confinement layer is formed on the second waveguide layer. The materials of the first waveguide layer and the second waveguide layer comprise AlGaAs, AlGaInP and GaInP. The first waveguide layer and the second waveguide layer may be formed by means of vapor deposition.
In one embodiment, a method of fabricating a light emitting structure includes: the method comprises the steps of forming a buffer layer on an oxygen absorption layer, forming a corrosion stop layer on the buffer layer, forming an ohmic contact layer on the corrosion stop layer, forming a current expansion layer on the ohmic contact layer, forming a first limiting layer on the current expansion layer, forming a first waveguide layer on the first limiting layer, forming a light-emitting layer on the first waveguide layer, forming a second waveguide layer on the light-emitting layer, forming a second limiting layer on the second waveguide layer, forming a transition layer on the second limiting layer, and forming a window layer on the transition layer.
In one embodiment, the light emitting diode is required to be detected after being formed, and the light emitting diode enters the light emitting diode chip manufacturing process after being qualified. The chip process can be prepared by using a flip-chip process, and the substrate, the oxygen absorption layer, the buffer layer and the corrosion stop layer are all removed.
The invention also provides a display device, which comprises a substrate; a plurality of light emitting devices are arrayed on the substrate, wherein the light emitting devices are the light emitting diodes in the above embodiments. Wherein each light emitting device comprises different types of light emitting diodes, for example, the light emitting devices comprise at least one red light emitting diode, at least one green light emitting diode, and at least one blue light emitting diode. In some embodiments, the light emitting diodes to which the present invention is applied may be, for example, Micro-LEDs or Mini-LEDs, and may be applied to Micro light emitting diode (Micro-LED) display devices.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A light emitting diode, comprising:
a substrate;
an oxygen-absorbing layer disposed on the substrate;
a light emitting structure disposed on the oxygen absorbing layer;
wherein the oxygen absorbing layer is used for absorbing oxygen in a reaction device forming the light emitting structure.
2. The light-emitting diode according to claim 1, wherein the light-emitting structure comprises a first confinement layer, a light-emitting layer, and a second confinement layer, which are sequentially stacked in a direction away from the oxygen-absorbing layer.
3. The led of claim 2, wherein the first confinement layer comprises an N-type AlInP confinement layer and the second confinement layer comprises a P-type AlInP confinement layer.
4. The light-emitting diode of claim 3, wherein the oxygen-absorbing layer comprises Alx1Ga1-x1As。
5. The LED of claim 4 wherein x1 is greater than 0.6.
6. The led of claim 2, wherein the light emitting structure further comprises:
a buffer layer disposed on the oxygen absorbing layer;
a first structural layer disposed on the buffer layer, wherein the first confinement layer is disposed on the first structural layer;
and the second structural layer is arranged on the second limiting layer.
7. A method for manufacturing a light emitting diode, comprising:
providing a substrate;
forming an oxygen absorption layer on the substrate;
forming a light emitting structure on the oxygen absorption layer;
wherein the oxygen absorbing layer is used for absorbing oxygen in a reaction device forming the light emitting structure.
8. The method of claim 7, wherein the forming an oxygen-absorbing layer on the substrate comprises:
growing Al on the substrate in the reaction equipmentx1Ga1-x1An As oxygen-absorbing layer.
9. The method of claim 8, wherein the Al is addedx1Ga1-x1The growth temperature of the As oxygen-absorbing layer comprises 660-720 ℃.
10. A display device, comprising:
a substrate;
a plurality of light emitting devices arranged in an array on the substrate;
wherein the light emitting device is the light emitting diode of any one of claims 1-6.
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| JP2012174876A (en) * | 2011-02-21 | 2012-09-10 | Hitachi Cable Ltd | Semiconductor light-emitting element and method for manufacturing semiconductor light-emitting element |
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