CN114361145A

CN114361145A - Display panel, manufacturing method thereof and display device

Info

Publication number: CN114361145A
Application number: CN202111675112.3A
Authority: CN
Inventors: 张灿源; 麦轩伟; 朱心宇
Original assignee: Hubei Changjiang New Display Industry Innovation Center Co Ltd
Current assignee: Hubei Changjiang New Display Industry Innovation Center Co Ltd
Priority date: 2021-12-31
Filing date: 2021-12-31
Publication date: 2022-04-15

Abstract

The application provides a display panel and a manufacturing method thereof, a display device, a first transfer structure and a second transfer structure are respectively formed, the first transfer structure comprises a first transfer substrate, a first transfer layer and a plurality of light-emitting devices, the second transfer structure comprises a second transfer substrate, a second transfer layer and an optical adjusting layer, the first transfer structure and the second transfer structure are bonded, so that the light-emitting devices in the first transfer structure are in close contact with the second transfer structure, then the first transfer substrate and the first transfer layer are peeled off, the light-emitting devices are transferred to the second transfer structure, the light-emitting devices and the optical adjusting layer are transferred to a target substrate, the light-emitting devices are continuously transferred to the target substrate from the second transfer structure, the light-emitting devices and the optical adjusting layer are transferred to the target substrate by using the first transfer structure and the second transfer structure, and the transfer of a huge number of light-emitting devices and the corresponding optical adjusting layers is realized, the process flow for manufacturing the display panel is simpler.

Description

Display panel, manufacturing method thereof and display device

Technical Field

The invention relates to the technical field of display, in particular to a display panel, a manufacturing method of the display panel and a display device.

Background

With the rapid development of terminal devices, higher requirements are put on the display of the terminal devices. The current display technology field is mainly divided into Liquid Crystal Display (LCD), Organic Light Emitting Display (OLED) and Micro-light emitting diode (Micro-LED) display. The micro light emitting diode display is a new generation of display technology, and the micro light emitting diode display has the advantages of high brightness, high light emitting efficiency, low power consumption and the like, and can realize single-point drive light emission by carrying out micro, thin film and array on a diode structure.

However, when a display panel based on Micro LEDs is manufactured, a huge amount of Micro-LEDs are transferred to the display panel, which results in a complicated manufacturing process of the display panel.

Disclosure of Invention

In view of the above, an object of the present invention is to provide a display panel, a method for manufacturing the same, and a display device, which can provide a manufacturing process of the display panel that can be mass-produced.

The embodiment of the application provides a manufacturing method of a display panel, which comprises the following steps:

forming a first transfer structure comprising a first transfer substrate, a first transfer layer and a plurality of light emitting devices, which are sequentially stacked;

forming a second transfer structure, wherein the second transfer structure comprises a second transfer substrate, a second transfer layer and an optical adjusting layer which are sequentially stacked;

bonding the first transfer structure and the second transfer structure;

peeling the first transfer substrate and the first transfer layer;

transferring the light emitting device and the light adjusting layer to a target substrate.

Optionally, the light adjusting layer comprises at least a quantum dot color conversion layer.

Optionally, the light adjusting layer includes a quantum dot color conversion layer and a color resistance layer, the color resistance layer includes a plurality of color resistance units, the color resistance units correspond to the light emitting devices, and the quantum dot color conversion layer is located on a side surface of the color resistance layer away from the second transfer substrate.

Optionally, the optical adjustment layer includes a quantum dot color conversion layer and a light blocking layer, and the quantum dot color conversion layer is located on one side surface of the light blocking layer far away from the second transfer substrate.

Optionally, the second transfer structure comprises a first color transfer structure and a second color transfer structure, at least the light-adjusting layers of the first color transfer structure and the second color transfer structure are different;

the transferring the light emitting device and the light adjusting layer to a target substrate includes:

and respectively transferring the light-emitting device and the light adjusting layer in the first color transfer structure to a target substrate and transferring the light-emitting device and the light adjusting layer in the second color transfer structure to the target substrate.

Optionally, the light-modifying layer is a light-blocking layer.

Optionally, the second transfer structure further comprises an adhesive layer on a side of the optical modifier layer away from the second transfer substrate;

transferring the light emitting device, the light adjusting layer, and the adhesive layer to a target substrate.

Optionally, before bonding the first transfer structure and the second transfer structure, the method further comprises:

etching the optical adjusting layer to form a plurality of optical adjusting parts, wherein the optical adjusting parts correspond to the light-emitting devices;

and transferring the light emitting device and the light adjusting part to a target substrate together.

Optionally, prior to transferring the light emitting device and the light adjusting layer to a target substrate, the method further comprises:

Optionally, when the optical adjustment layer includes a light blocking layer, after the light emitting device and the optical adjustment portion are co-transferred to a target substrate, the method further comprises:

and etching to remove the light blocking layer on the surface of one side of the light-emitting device, which is far away from the target substrate, and reserving the light blocking layer on the side wall of the light-emitting device to form a retaining wall.

Optionally, the bonding the first transfer structure and the second transfer structure comprises:

and bonding the first transfer structure and the second transfer structure, and at least partially sinking the light-emitting device into the optical adjustment layer by using bonding force.

Optionally, the depth range of the light emitting device sunk into the light adjusting layer is smaller than the thickness of the light emitting device.

Optionally, the forming a first transfer structure comprises:

forming the first transfer layer on the first transfer substrate;

providing an epitaxial layer, wherein the epitaxial layer comprises an epitaxial substrate and a plurality of light-emitting devices;

bonding the first transfer layer and the epitaxial layer so that the first transfer layer and the light-emitting device are in close contact;

and stripping the epitaxial substrate.

forming a first transfer structure, wherein the first transfer structure comprises a first transfer substrate, a first transfer layer and an epitaxial film layer which are sequentially stacked;

bonding the first transfer structure and the second transfer structure to bring the epitaxial film layer and the optical adjustment layer into close contact;

peeling the first transfer substrate and the first transfer layer;

etching the epitaxial film layer and the optical adjusting layer to form a plurality of light-emitting devices and a plurality of optical adjusting parts, wherein the light-emitting devices correspond to the optical adjusting parts;

transferring the light emitting device and the light adjusting portion to a target substrate.

An embodiment of the present application provides a display panel, including:

a target substrate;

a plurality of light emitting devices on the target substrate;

the light adjusting part is positioned on one side of the light emitting device, which is far away from the target substrate, and corresponds to the light emitting device;

wherein the light adjusting portion is in close contact with the light emitting device.

Optionally, the light emitting device is at least partially embedded in the light adjusting portion.

Optionally, the light adjusting part surrounds the light emitting device and exposes at least a part of the surface of the light emitting device away from the target substrate.

An embodiment of the present application provides a display device including the display panel according to any one of the above.

In the method for manufacturing a display panel provided by the embodiment of the present application, a first transfer structure and a second transfer structure are respectively formed, the first transfer structure includes a first transfer substrate, a first transfer layer and a plurality of light emitting devices, which are sequentially stacked, the second transfer structure includes a second transfer substrate, a second transfer layer and an optical adjustment layer, which are sequentially stacked, and then the first transfer structure and the second transfer structure are bonded, so that the light emitting devices in the first transfer structure are in close contact with the second transfer structure, and then the first transfer substrate and the first transfer layer are peeled off, so that the light emitting devices are transferred into the second transfer structure, and then the light emitting devices and the optical adjustment layer are transferred to a target substrate, i.e., the light emitting devices are continuously transferred from the second transfer structure to the target substrate, that is, the method for manufacturing a display panel provided by the embodiment of the present application uses the first transfer structure and the second transfer structure to transfer the light emitting devices and the optical adjustment layer to the target substrate, the transfer of a huge number of light emitting devices and corresponding light adjusting layers is realized, so that the process flow for manufacturing the display panel is simpler.

Drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic flow chart illustrating a manufacturing method of a display panel according to an embodiment of the present disclosure;

FIG. 2 is a schematic structural diagram of a display panel manufacturing process according to an embodiment of the present disclosure;

fig. 3A is a schematic structural diagram illustrating a light emitting device provided in an embodiment of the present application;

3B-3E show schematic structural diagrams in a manufacturing process of a first transfer structure provided by the embodiment of the application;

4A-4E illustrate a schematic structural diagram of a second transfer structure provided by an embodiment of the present application;

5A-8C show schematic structural diagrams in a manufacturing process of a display panel provided by an embodiment of the present application;

fig. 9 is a schematic diagram illustrating a display panel provided in an embodiment of the present application;

fig. 10 is a schematic structural diagram illustrating a manufacturing process of a display panel according to an embodiment of the present application;

fig. 11 is a schematic flow chart illustrating another method for manufacturing a display panel according to an embodiment of the present disclosure;

12-13B are schematic structural diagrams in the manufacturing process of the display panel provided by the embodiment of the application;

fig. 14 is a schematic structural diagram of another display panel provided in an embodiment of the present application;

fig. 15 shows a schematic structural diagram of a display device according to an embodiment of the present application.

Detailed Description

In order to make the aforementioned objects, features and advantages of the present application more comprehensible, embodiments accompanying the present application are described in detail below with reference to the accompanying drawings.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be practiced in other ways than those described herein, and it will be apparent to those of ordinary skill in the art that the present application is not limited by the specific embodiments disclosed below.

The present application will be described in detail with reference to the drawings, wherein the cross-sectional views illustrating the structure of the device are not enlarged partially in general scale for convenience of illustration, and the drawings are only examples, which should not limit the scope of the present application. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.

The current display technology field is mainly divided into Liquid Crystal Display (LCD), Organic Light Emitting Display (OLED) and Micro-light emitting diode (Micro-LED) display. The micro light emitting diode display is a new generation of display technology, and the micro light emitting diode display has the advantages of high brightness, high light emitting efficiency, low power consumption and the like, and can realize single-point drive light emission by carrying out micro, thin film and array on a diode structure. The size of the Micro-LEDs is in the micron level, and the interval of each Micro-LED is also in the micron level, so that a huge amount of Micro-LEDs are included in the Micro-LED-based display panel, but when the Micro-LED-based display panel is manufactured at present, the huge amount of Micro-LEDs with the Micro-scale are transferred to the large-size display panel, and the transferring precision and the transferring cost are also considered, so that the manufacturing process flow of the display panel is very complicated.

Based on this, embodiments of the present application provide a method for manufacturing a display panel, in which a first transfer structure and a second transfer structure are respectively formed, the first transfer structure includes a first transfer substrate, a first transfer layer, and a plurality of light emitting devices, which are sequentially stacked, the second transfer structure includes a second transfer substrate, a second transfer layer, and an optical adjustment layer, which are sequentially stacked, and then the first transfer structure and the second transfer structure are bonded such that the light emitting devices in the first transfer structure and the second transfer structure are in close contact, and then the first transfer substrate and the first transfer layer are peeled off such that the light emitting devices are transferred into the second transfer structure, and then the light emitting devices and the optical adjustment layer are transferred to a target substrate, that is, the light emitting devices are continuously transferred from the second transfer structure to the target substrate The plate realizes the transfer of a huge number of light-emitting devices and light adjusting layers corresponding to the light-emitting devices, so that the process flow for manufacturing the display panel is simpler.

For a better understanding of the technical solutions and effects of the present application, specific embodiments will be described in detail below with reference to the accompanying drawings.

Referring to fig. 1, a schematic flow chart of a method for manufacturing a display panel according to an embodiment of the present disclosure is shown. The manufacturing process of the display panel provided by the embodiment of the application comprises the following steps:

s101, forming a first transfer structure 100, as shown with reference to fig. 2.

The first transfer structure 100 includes a first transfer substrate 110, a first transfer layer 120, and a plurality of light emitting devices 130, which are sequentially stacked, and the light emitting devices 130 are located on a side of the first transfer layer 120 away from the first transfer substrate 110. The first transfer substrate 110 serves to provide support for the first transfer layer 120 and the light emitting device 130, the first transfer layer 120 serves to assist the transfer of the light emitting device 130, and the first transfer layer 120 may be an adhesive layer or a sacrificial layer.

The light emitting device 130 may comprise a Micro-LED, such as an inorganic Micro-LED. The light emitting devices 130 may be distributed in an array in the first transfer structure 100.

Fig. 3A is a schematic structural diagram of a light emitting device according to an embodiment of the present disclosure. The light emitting device shown in fig. 3A may be a micro light emitting diode including a light emitting body and a contact electrode, wherein the light emitting body includes an N-type semiconductor layer 131, an active layer 132, and a P-type semiconductor layer 133 sequentially stacked, and the active layer 132 may be a quantum well layer; the contact electrode includes a first contact electrode 134 and a second contact electrode 135, the first contact electrode 134 is electrically connected to the N-type semiconductor layer 131, the second contact electrode 135 is electrically connected to the P-type semiconductor layer 133, and the first contact electrode 134 and the second contact electrode 135 are used for electrical lead-out of the light emitting diode. The micro light emitting diode may further include an insulating layer 136, the insulating layer 136 including a portion surrounding the sidewall of the light emitting body and a portion located at a side of the light emitting body connected to the contact electrode, the insulating layer 136 exposing the portion of the light emitting body for connection to the contact electrode.

Specifically, the material of the N-type semiconductor layer 131 may be N-type doped gallium nitride, the material of the P-type semiconductor layer 133 may be P-type doped gallium nitride, the material of the active layer 320 may be indium gallium nitride, and the materials of the first contact electrode 134 and the second contact electrode 135 may be materials with good conductivity, such as metal materials.

The size of the micro light emitting diode can be smaller than 200 micrometers, further smaller than 100 micrometers, also smaller than 50 micrometers, further, the size range of the micro light emitting diode can be 1-10 micrometers.

In an embodiment of the present application, the first transfer structure 100 may be formed in the following manner:

an epitaxial layer 101 is provided, the epitaxial layer 101 comprising an epitaxial substrate 102 and a plurality of light emitting devices 130, as illustrated with reference to fig. 3B. A plurality of light emitting devices 130 are formed on the epitaxial substrate 102, and the light emitting devices 130 are distributed in an array on the epitaxial substrate 102. The epitaxial substrate 102 may be a sapphire substrate.

A first transfer layer 120 is formed on the first transfer substrate 110, as shown with reference to fig. 3C.

The first transfer layer 120 and the epitaxial layer 101 are bonded, as shown in fig. 3D, so that the first transfer layer 120 and the light emitting devices 130 are in close contact, and the first transfer layer 120 has a plurality of light emitting devices 130 distributed in an array, and the epitaxial substrate 102 is located above the plurality of light emitting devices 130 and covers the plurality of light emitting devices 130.

The epitaxial substrate 102 is peeled off as shown with reference to fig. 3E. The plurality of light emitting devices 130 and the epitaxial substrate 102 are peeled off, for example, by laser peeling, so that the plurality of light emitting devices 130 are transferred into the first transfer structure 100.

S102, a second transfer structure 200 is formed.

In the embodiment of the present application, the second transfer structure 200 includes a second transfer substrate 210, a second transfer layer 220, and an optical adjustment layer 230, which are sequentially stacked, as shown in fig. 4A. The second transfer substrate 210 is used to provide support for the second transfer layer 220 and the light adjusting layer 230, and the second transfer layer 220 is used to transfer the subsequent auxiliary light emitting devices 130 and the light adjusting layer 230. The material of the second transfer substrate 210 and the material of the first transfer substrate 110 may be the same, and the material of the first transfer layer 120 and the second transfer layer 220 may be the same.

Specifically, the second transfer substrate 210, the second transfer layer 220, and the optical adjustment layer 230 may be sequentially formed on the second transfer substrate 220, so as to finally obtain the second transfer substrate 210, the second transfer layer 220, and the optical adjustment layer 230 which are stacked.

The light adjusting layer 230 may be used to adjust the light emitted from the light emitting device 130. The light adjusting layer 230 may also be adjusted accordingly depending on the light emitting device 130.

As shown in fig. 4A, the light adjusting layer 230 may be a quantum dot color conversion layer.

The light emitting device 130 may be a micro light emitting diode with the same light emitting color, such as a blue micro light emitting diode or an ultraviolet micro light emitting diode, and the light adjusting layer 230 may include a Quantum dot color conversion (QD) layer, which is used to realize the conversion of the light emitting color, so as to obtain the light emitting with multiple colors. Specifically, the quantum dot color conversion layer may be a red light quantum dot color conversion layer, and blue light emitted by the blue micro light emitting diode is converted into red light by the red light quantum dot color conversion layer and emitted. The quantum dot color conversion layer may further include a green quantum dot color conversion layer for converting blue light into green light.

As shown in fig. 4A, the light adjusting layer 230 may be a color resistance layer for improving color purity. Specifically, when the light emitting device 130 is a blue light emitting diode, the color resistance layer is a blue color resistance layer; when the light emitting device 130 is a red light emitting diode, the color resistance layer is a red color resistance layer; when the light emitting device 130 is a green light emitting diode, the color resist layer is a green color resist layer.

The optical adjustment layer 230 may include a quantum dot Color conversion layer 231 and a Color Filter (CF) layer 232. The quantum dot color conversion layer 231 is located on a surface of the color resist layer 232 away from the second transfer substrate 210, i.e., the quantum dot color conversion layer 231 covers the color resist layer 232. The foregoing may be referred to for the correspondence of the quantum dot color conversion layer 231 and the light emitting device 130 in terms of color, and the foregoing may be referred to for the correspondence of the color resistance layer 232 and the light emitting device 130 in terms of color.

As an example, the color resistance layer 232 may be a full-surface film layer, similar to the arrangement of the quantum dot color conversion layer 231.

As another example, as shown in fig. 4B, the color resist layer 232 may be provided in a plurality of patterns. Specifically, the color resistance layer 232 includes a plurality of color resistance units 232-1, the color resistance units 232-1 correspond to the light emitting devices 130, for example, the color resistance units 232-1 correspond to the light emitting devices 130 one by one, or one color resistance unit 232-1 corresponds to a plurality of light emitting devices 130.

Specifically, the color-resisting film layer may be formed first, and then patterned, so as to obtain a plurality of color-resisting units 232-1.

As yet another example, the optical adjustment layer 230 may include a quantum dot color conversion layer 231 and a light blocking layer 233, as shown with reference to fig. 4C. The quantum dot color conversion layer 231 is located on a side surface of the light blocking layer 233 away from the second transfer substrate 210. The light blocking layer 233 may be used to adjust the light emitting angle of the light emitting device 130, or to prevent halo from being generated, and may also be considered to play a role of preventing light emissions of adjacent light emitting devices 130 from interfering with each other.

As another implementation, the optical adjustment layer 230 may be a light blocking layer 233, as described with reference to fig. 4D.

In other embodiments, the second transfer structure 200 further includes an adhesive layer 240, the adhesive layer 240 is located on a side surface of the optical adjustment layer 230 away from the second transfer substrate 210, and referring to fig. 4E, the light emitting device 130, the optical adjustment layer 230 and the adhesive layer 240 can be simultaneously transferred to the target substrate 300 subsequently using the second transfer structure 200.

And S103, bonding the first transfer structure 100 and the second transfer structure 200.

Referring to fig. 5A, the first transfer structure 100 and the second transfer structure 200 are disposed opposite to each other such that the light emitting device 130 is located on a side of the first transfer substrate 110 facing the second transfer structure 200 and the light adjusting layer 230 is located on a side of the second transfer substrate 210 facing the first transfer structure 100, and the first transfer structure 100 and the second transfer structure 200 may be bonded to bring the light emitting device 130 into close contact with the light adjusting layer 230. The first transfer structure 100 and the second transfer structure 200 may be in close contact by means of adhesion.

The light adjustment layer 230 may be a material having adhesion for adhering the first transfer structure 100 and the second transfer structure 200 so that the light emitting device 130 is in close contact with the light adjustment layer 230. Specifically, the material of the quantum dot color conversion layer (230 or 231) may be set to be a material having viscosity, or the material of the light blocking layer 233 may be set to be a material having viscosity.

When the second transfer structure 200 further includes the adhesive layer 240, as shown in fig. 5B, the first transfer structure 100 is disposed opposite to the second transfer structure 200 such that the light emitting device 130 is located on a side of the first transfer substrate 110 facing the second transfer structure 200, and the adhesive layer 240 is located on a side of the second transfer substrate 210 facing the first transfer structure 100, the first transfer structure 100 and the second transfer structure 200 may be bonded to bring the light emitting device 130 into close contact with the adhesive layer 240, that is, the adhesive layer 240 may be used to achieve close contact of the first transfer structure 100 and the second transfer structure 200.

In addition, the refractive index of the adhesive layer 240 may be smaller or even equal to the refractive index of the film layer in contact with the light emitting device 130, which is beneficial to the light extraction of the light emitting device 130 and can improve the light extraction efficiency.

When the first transfer structure 100 and the second transfer structure 200 are bonded or adhered, the bonding force or the adhesive force may be used to make the light emitting device 130 contact only the surface of the optical adjustment layer 230 on the side away from the second transfer substrate 210, as shown in fig. 5C, or to make the light emitting device 130 at least partially sink into the optical adjustment layer 230, as shown in fig. 5A, so as to finally form the tight contact between the light emitting device 130 and the optical adjustment layer 230.

As one possible implementation manner, referring to fig. 5C, the light emitting device 130 is in contact with only one side surface of the optical adjustment layer 230 away from the second transfer substrate 210, that is, the light emitting device 130 is in contact with only the upper surface of the optical adjustment layer 230 without being sunk into the optical adjustment layer 230, and the light emitting device 130 and the optical adjustment layer 230 are in close contact through surface adhesion between the first transfer structure 100 and the second transfer structure 200. When the second transfer structure 200 further includes the adhesive layer 240, the light emitting device 130 is in contact with only the upper surface of the adhesive layer 240 without being sunk into the adhesive layer 240, and the light emitting device 130 and the adhesive layer 240 are brought into close contact by the adhesiveness of the adhesive layer 240.

As another possible implementation, referring to fig. 5A, the light emitting device 130 is at least partially recessed into the optical adjustment layer 230, and the light emitting device 130 and the optical adjustment layer 230 are in close contact by recessing the light emitting device 130 into the optical adjustment layer 230 by a certain depth. When the second transfer structure 200 further includes the adhesive layer 240, the light emitting device 130 is at least partially sunk into the adhesive layer 240, and the light emitting device 130 and the adhesive layer 240 are brought into close contact by the adhesiveness of the adhesive layer 240.

Sinking the light emitting device 130 into the optical adjusting layer 230 or the adhesive layer 240 can increase the contact area, improve the effect of close contact, and further adjust the light emission of the front and the side of the light emitting device 130, thereby improving the light emission effect.

The depth range of the light emitting device 130 sunk into the optical adjusting layer 230 is smaller than the thickness of the light emitting device 130, so that the light emitting device 130 is not covered by the optical adjusting layer 230 on the basis that the light emitting device 130 is in close contact with the optical adjusting layer 230, and the subsequent transfer of the light emitting device 130 is affected, that is, the optical adjusting layer 230 surrounds the light emitting device 130 and exposes at least a part of the surface of the light emitting device 130 far away from the second transfer substrate 210.

S104, the first transfer substrate 110 and the first transfer layer 120 are peeled off, as shown in fig. 6.

In the embodiment of the present application, after the first transfer structure 100 and the second transfer structure 200 are bonded, the light emitting device 130 is brought into close contact with the light adjustment layer 230 or the adhesive layer 240, the first transfer substrate 110 and the first transfer layer 120 are peeled off, and the light emitting device 130 is transferred into the second transfer structure 200.

The manner of peeling the first transfer substrate 110 and the first transfer layer 120 may be laser peeling. In another embodiment, the first transfer layer 120 may be a film layer with adhesive property, and the adhesive property of the first transfer layer 120 is reduced by adjusting environmental conditions, such as temperature or light irradiation, so as to release the light emitting device 130, which is beneficial to avoid taking away part of the light emitting device 130 while peeling off the first transfer substrate 110 and the first transfer layer 120, thereby failing to achieve the effect of leaving the light emitting device 130 on the second transfer structure 200.

In the embodiment of the present application, after the light emitting device 130 is transferred into the second transfer structure 200, the light adjusting layer 230 may be patterned, i.e., the light adjusting layer 230 is etched to form a plurality of light adjusting portions 231, as shown in fig. 7. The light adjusting part 231 corresponds to the light emitting devices 130, for example, the light adjusting part 231 and the light emitting devices 130 correspond one to one, or one light adjusting part 231 corresponds to a plurality of light emitting devices 130.

In other embodiments, when the second transfer structure 200 includes the adhesive layer 240, the adhesive layer 240 and the optical adjustment layer 230 may be patterned together, i.e., the adhesive layer 240 and the optical adjustment layer 230 are etched to form a plurality of adhesive portions and a plurality of optical adjustment portions 231, and the optical adjustment portions 231 may correspond to the adhesive portions one to one.

In other embodiments, before bonding the first transfer structure 100 and the second transfer structure 200, the light adjusting layer 230 may be patterned during the formation of the second transfer structure 200, the light adjusting layer 230 is etched to form a plurality of light adjusting portions 231, and when bonding the first transfer structure 100 and the second transfer structure 20, the light adjusting portions 231 correspond to the light emitting devices 130, the light emitting devices 130 are in close contact with the corresponding light adjusting portions 231, for example, the light adjusting portions 231 correspond to the light emitting devices 130 one by one, or one light adjusting portion 231 corresponds to a plurality of light emitting devices 130.

That is, the optical adjustment layer 230 may be patterned before bonding, or the optical adjustment layer 230 may be patterned after bonding, and the optical adjustment layer 230 is etched after the light emitting device 130 and the optical adjustment layer 230 are tightly bonded to each other to form the optical adjustment portion 231, so that the alignment accuracy between the light emitting device 130 and the optical adjustment portion 231 can be improved, the light emitting device 130 and the optical adjustment portion 231 can be accurately aligned, the alignment deviation can be reduced, the accuracy of the display panel can be finally improved, and the display effect can be improved.

S105, the light emitting device 130 and the light adjusting layer 230 are transferred to a target substrate 300, as shown with reference to fig. 8A, 8B, and 8C.

In an embodiment of the present application, the light emitting device 130 and the light adjusting layer 230 are co-transferred to the target substrate 300. The target substrate 300 may be a driving substrate including a driving circuit layer including a plurality of pixel circuits 310 and a receiving electrode 320, the pixel circuits 310 including a plurality of transistors, and the light emitting device 130 connected with the pixel circuits 310 in the driving circuit layer through the receiving electrode 320.

Referring to fig. 8A, 8B and 8C, the receiving electrode 320 includes two electrodes in a pair, and when the light emitting device 130 is electrically connected to the target substrate 300, two contact electrodes of the light emitting device 130: the first contact electrode 134 and the second contact electrode 135 are in contact with both electrodes of the receiving electrode, respectively, to achieve electrical connection.

Fig. 8A shows a schematic view in which the light emitting device 130 is sunk in the optical adjustment portion 231, fig. 8B shows a schematic view in which the light emitting device 130 is in contact with only the surface of the optical adjustment portion 231, the light emitting device 130 is not sunk in the optical adjustment portion 231, and fig. 8C shows a schematic view in which the light emitting device 130 is sunk in a plurality of adhesive members 241 in the adhesive layer 240, the optical adjustment portion 231 being between the adhesive members 241 and the second transfer layer 220.

The target substrate 300 may further include a plurality of anti-crosstalk barriers 302 for isolating the plurality of pixel circuits 310 and the receiving electrode 320 distributed in an array and the light emitting device 130 transferred subsequently, so as to prevent the light emissions of the adjacent light emitting units 130 from interfering with each other, as shown in fig. 8B and 8C.

Specifically, the laser transfer technology may be used to transfer the light emitting device 130 and the optical adjustment layer 230 to the target substrate 300 in a non-contact manner, that is, the laser may be used to irradiate the surface of the second transfer substrate 210 on the side where the second transfer layer 220 is not formed, and the gravity of the light emitting device 130 and the optical adjustment layer 230 is used to contact the light emitting device 130 and the receiving electrode 320 on the target substrate 300. Compared with the independent gravity of the light emitting device 130, the gravity of the light emitting device 130 combined with the light adjusting layer 130 is increased, and the laser transfer yield of the light emitting device 130 is further improved.

Specifically, the optical adjustment layer 230 includes a plurality of optical adjustment portions 231, the optical adjustment portions 231 correspond to the light emitting devices 130, and transferring the light emitting devices 130 and the optical adjustment layer 230 to the target substrate 300 is to transfer the light emitting devices 130 and the corresponding optical adjustment portions 231 to the target substrate 300 together, which is shown in fig. 8A and 8B.

In other embodiments, when the second transfer structure 200 further includes the adhesive layer 240, the light emitting device 130, the light adjusting layer 230, and the adhesive layer 240 are collectively transferred to the target substrate 300, as shown with reference to fig. 8C.

In an embodiment of the present application, the second transfer structure 200 may include a plurality of color transfer structures, the light adjusting layers of the plurality of transfer structures are different, at least the corresponding colors of the light adjusting layers are different, and the light emitting device 130 and the light adjusting layer 230 in the second transfer structure 200 with different colors may be respectively transferred to the target substrate 300 to form the light adjusting layers with multiple colors on the target substrate 300.

Specifically, the second transfer structure 200 includes a first color transfer structure and a second color transfer structure, where the light adjusting layers of the first color transfer structure and the second color transfer structure are different, that is, the light adjusting portions are different, for example, when the light adjusting layer includes a quantum dot color conversion layer and a color resistance layer, the corresponding colors of the quantum dot color conversion layer and the color resistance layer of the first color transfer structure and the second color transfer structure are different, and at this time, the light emitting device and the light adjusting layer in the first color transfer structure can be transferred to the target substrate and the light emitting device and the light adjusting layer in the second color transfer structure can be transferred to the target substrate.

As an example, refer to fig. 9, which is a schematic diagram of a display panel provided in an embodiment of the present application. The light emitting device 130 in the display panel shown in fig. 9 is a micro light emitting diode of ultraviolet, and the display panel includes light adjusting portions 231 of three colors, red, green, and blue, respectively. The light adjusting part 231 of the 3 colors transfers the light emitting device 130 and the light adjusting part 231 in the red transfer structure to the target substrate 300 by using the laser transfer technique, transfers the light emitting device 130 and the light adjusting part 231 in the green transfer structure to the target substrate 300 by using the laser transfer technique, and transfers the light emitting device 130 and the light adjusting part 231 in the blue transfer structure to the target substrate 300 by using the laser transfer technique, respectively. In the case where the light emitting device 130 is a blue micro light emitting diode, the light emitting device 130 may be provided with the corresponding light adjusting part 231 for the red pixel and the green pixel, and the light emitting device 130 may be provided with a transparent material without the light adjusting part 231 for the blue pixel.

In the embodiment of the present application, when the optical adjustment layer 230 includes the light blocking layer 233, after the light emitting device 130 and the optical adjustment part 231 are collectively transferred to the target substrate 300, the light blocking layer 233 on the surface of the light emitting device 130 on the side away from the target substrate 300 may be etched away, and the light blocking layer 233 on the side wall of the light emitting device 130 may be left to form the bank 303. The surface of the bank 303 adjacent to the sidewall of the light emitting device 130 may be an inclined surface intersecting the surface of the sidewall of the light emitting device 130. The walls 303 are gradually reduced in width in a direction away from the target substrate 300 to form a structure with a narrow top and a wide bottom, as shown in fig. 10.

In the embodiment of the present application, the target substrate 300 includes at least one of the anti-crosstalk wall 302 and the wall 303 to avoid halo between the adjacent light emitting devices 130, and may also include both the anti-crosstalk wall 302 and the wall 303 to further avoid optical crosstalk between the adjacent light emitting devices 130.

As can be seen from the above description, the method for manufacturing a display panel according to the embodiment of the present application forms an optical adjustment layer in the second transfer structure, transfers the light emitting device to the second transfer structure by using the first transfer structure, and then transfers the light emitting device and the optical adjustment layer to the target substrate by using the laser transfer technology and the second transfer structure, and simultaneously transfers a large number of light emitting devices and their corresponding optical adjustment layers, thereby solving the problem of misalignment between the optical adjustment layer and the light emitting device, and making the process flow for manufacturing the display panel simpler.

As can be seen from this, in the method for manufacturing a display panel provided in the embodiment of the present application, a first transfer structure and a second transfer structure are respectively formed, where the first transfer structure includes a first transfer substrate, a first transfer layer, and a plurality of light emitting devices that are sequentially stacked, the second transfer structure includes a second transfer substrate, a second transfer layer, and an optical adjustment layer that are sequentially stacked, and then the first transfer structure and the second transfer structure are bonded such that the light emitting device in the first transfer structure and the optical adjustment layer in the second transfer structure are in tight contact with each other, and then the first transfer substrate and the first transfer layer are peeled off such that the light emitting device is transferred to the second transfer structure, and then the light emitting device and the optical adjustment layer are transferred to a target substrate, that is, the light emitting device is continuously transferred from the second transfer structure to the target substrate And the light emitting devices are moved to the target substrate, so that the transfer of a large number of light emitting devices and corresponding light adjusting layers is realized, and the process flow for manufacturing the display panel is simpler.

Fig. 11 is a schematic flow chart illustrating another method for manufacturing a display panel according to an embodiment of the present disclosure. The manufacturing process of the display panel provided by the embodiment of the application comprises the following steps:

s201, forming a first transfer structure.

In an embodiment of the present application, the first transfer structure includes a first transfer substrate, a first transfer layer, and an epitaxial film layer, which are sequentially stacked. The first transfer substrate is used for providing support for the first transfer layer and the epitaxial film layer, and the first transfer layer is used for assisting the epitaxial film layer in transfer. The epitaxial film layer may be used for subsequent formation of a light emitting device.

And S202, forming a second transfer structure.

In an embodiment of the present application, the second transfer structure includes a second transfer substrate, a second transfer layer, and an optical adjustment layer, which are sequentially stacked. The second transfer substrate is used for providing support for the second transfer layer and the light adjusting layer, and the second transfer layer is used for transferring the follow-up auxiliary light-emitting device and the light adjusting layer. The material of the second transfer substrate and the material of the first transfer substrate may be the same, and the material of the first transfer layer and the second transfer layer may be the same.

Specifically, the second transfer layer and the optical adjustment layer may be sequentially formed on the second transfer substrate, and the second transfer substrate, the second transfer layer, and the optical adjustment layer may be stacked.

The light adjusting layer can be used for adjusting the light emitted by the light emitting device. The light adjusting layer can be adjusted accordingly according to the light emitting device.

S203, bonding the first transfer structure and the second transfer structure, as shown in fig. 12.

In an embodiment of the present application, the first transfer structure 100 and the second transfer structure 200 may be bonded such that the epitaxial film layer 140 in the first transfer structure 100 is in intimate contact with the optical modifier layer 230 in the second transfer structure 200.

Specifically, referring to fig. 12, the first transfer structure 100 and the second transfer structure 200 are disposed opposite to each other, such that the epitaxial film layer 140 is located on the side of the first transfer substrate 110 facing the second transfer structure 200, and the optical adjustment layer 230 is located on the side of the second transfer substrate 210 facing the first transfer structure 100, in the embodiment of the present application, the first transfer structure 100 and the second transfer structure 200 may be bonded, such that the epitaxial film layer 140 is in close contact with the optical adjustment layer 230.

In other embodiments, when the optical adjustment layer is a material having adhesion, the first transfer structure and the second transfer structure may also be adhered so that the epitaxial film layer is in close contact with the optical adjustment layer.

S204, stripping the first transfer substrate and the first transfer layer.

In an embodiment of the present application, after the first transfer structure and the second transfer structure are bonded, the epitaxial film layer is brought into close contact with the optical adjustment layer, the first transfer substrate and the first transfer layer are peeled off, and the epitaxial film layer is transferred into the second transfer structure.

S205, etching the epitaxial film layer 140 and the optical adjusting layer 230, as shown in fig. 13A and 13B.

In the embodiment of the present application, after the epitaxial film layer 140 is transferred into the second transfer structure 200, the light adjusting layer 230 and the epitaxial film layer 140 may be patterned, i.e., the light adjusting layer 230 and the epitaxial film layer 140 may be etched, forming the plurality of light adjusting portions 231 and the plurality of light emitting devices 130. The light adjusting part 230 corresponds to the light emitting devices 130, for example, the light adjusting part and the light emitting devices correspond one to one, or one light adjusting part corresponds to a plurality of light emitting devices.

Referring to fig. 13A, after patterning the light adjusting layer 230 and the epitaxial film layer 140, the resulting light adjusting portion 231 and the light emitting device 130 are the same size, that is, the widths of the light adjusting portion 231 and the light emitting device 130 are the same in a direction parallel to the second transfer substrate 210, and the light emitting device 130 is in close contact with only the surface of the light adjusting portion 231 without being sunk into the light adjusting portion 231.

Referring to fig. 13B, after patterning the light adjusting layer 230 and the epitaxial film layer 140, the resulting light adjusting portion 231 and the light emitting device 130 are different in size, the light adjusting portion 231 is larger than the light emitting device 130, that is, the width of the light adjusting portion 231 is larger than the width of the light emitting device 130 in a direction parallel to the second transfer substrate 210, and the light emitting device 130 is in close contact with only the surface of the light adjusting portion 231 without being sunk into the light adjusting portion 231.

S206, transferring the light emitting device and the light adjusting portion to a target substrate.

In the embodiments of the present application, the light emitting device and the light adjusting portion are collectively transferred to a target substrate. The target substrate may be a driving substrate carrying a plurality of driving transistors distributed in an array, and the driving transistors correspond to the light emitting devices.

Specifically, the light emitting device and the optical adjusting portion can be transferred to the target substrate in a non-contact manner by using a laser transfer technique, that is, the surface of the second transfer substrate on the side where the second transfer layer is not formed can be irradiated with laser, and the light emitting device and the driving transistor on the target substrate are in contact by using the gravity of the light emitting device and the optical adjusting portion.

As can be seen from the above description, in the embodiments of the present application, the epitaxial film layer is formed on the first transfer substrate, the epitaxial film layer includes a portion capable of forming the light emitting device, and after the epitaxial film layer and the optical adjustment layer are in close contact with each other, the epitaxial film layer and the optical adjustment layer are etched at the same time to obtain the corresponding light emitting device and the optical adjustment portion, so that the non-offset alignment between the light emitting device and the optical adjustment portion is achieved, the alignment accuracy is improved, the display effect of the display panel is improved, the process manufacturing flow is simple, and the large-scale mass production of the display panel can be achieved.

Based on the manufacturing method of the display panel provided by the above embodiment, the embodiment of the present application further provides a display panel, and the working principle of the display panel is described in detail below with reference to the accompanying drawings.

Referring to fig. 14, the figure is a schematic structural diagram of a display panel according to an embodiment of the present application.

The display panel that this application embodiment provided includes:

a target substrate 300;

a plurality of light emitting devices 130 on the target substrate 300;

an optical adjusting portion 231 located on a side of the light emitting device 130 away from the target substrate, the optical adjusting portion 231 corresponding to the light emitting device 130;

wherein the light adjusting part 231 is in close contact with the light emitting device 130.

In the embodiment of the present application, the plurality of light emitting devices 130 are distributed in an array on the target substrate 300, and the light emitting devices 130 may be of the same color, and correspond to the light adjusting parts 231 of different colors, so as to realize light emission of multiple colors.

The target substrate 300 may be a driving substrate including a driving circuit layer including a plurality of pixel circuits 310 including a plurality of transistors, and a receiving electrode 320, and the light emitting device 130 is connected with the pixel circuits 310 in the driving circuit layer through the receiving electrode 320.

In the embodiment of the present application, the light emitting device 130 is in contact with the surface of the light adjusting portion 231.

The embodiment of the present application further provides a display device, which includes the display panel described in the above embodiment.

Fig. 15 is a schematic plan view illustrating a display device according to an embodiment of the present disclosure. As can be seen from the figure, the display device 1000 includes the display panel 100, and the display panel 100 is the display panel 100 described in any of the embodiments. The display device 1000 provided in the embodiment of the present application may be other display devices with a display function, such as a mobile phone, a computer, a television, and a vehicle-mounted display device, and the embodiment of the present application is not particularly limited. The display device 1000 provided in the embodiment of the present application has the beneficial effects of the display panel 100 provided in the embodiment of the present application, and specific reference may be specifically made to the specific description of the display panel in the above embodiment, which is not repeated herein.

The foregoing is merely a preferred embodiment of the present application and, although the present application discloses the foregoing preferred embodiments, the present application is not limited thereto. Those skilled in the art can now make numerous possible variations and modifications to the disclosed embodiments, or modify equivalent embodiments, using the methods and techniques disclosed above, without departing from the scope of the claimed embodiments. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present application still fall within the protection scope of the technical solution of the present application without departing from the content of the technical solution of the present application.

Claims

1. A method of manufacturing a display panel, comprising:

bonding the first transfer structure and the second transfer structure;

peeling the first transfer substrate and the first transfer layer;

2. The method of manufacturing of claim 1, wherein the light conditioning layer comprises a quantum dot color conversion layer.

3. The manufacturing method according to claim 2, wherein the light adjusting layer comprises a quantum dot color conversion layer and a color resistance layer, the color resistance layer comprises a plurality of color resistance units, the color resistance units correspond to the light emitting devices, and the quantum dot color conversion layer is located on one side surface of the color resistance layer, which is far away from the second transfer substrate.

4. The manufacturing method according to claim 2, wherein the optical adjustment layer includes a quantum dot color conversion layer and a light blocking layer, the quantum dot color conversion layer being located on a side surface of the light blocking layer away from the second transfer substrate.

5. The manufacturing method according to claim 2,

the second transfer structure comprises a first color transfer structure and a second color transfer structure, and at least the light adjusting layers of the first color transfer structure and the second color transfer structure are different;

6. The method of manufacturing of claim 1, wherein the optical modifier layer is a light blocking layer.

7. The manufacturing method according to claim 1, wherein the second transfer structure further includes an adhesive layer on a side of the optical adjustment layer away from the second transfer substrate;

8. The manufacturing method according to any one of claims 1 to 7, characterized in that, before bonding the first transfer structure and the second transfer structure, the method further comprises:

9. The manufacturing method according to any one of claims 1 to 7,

prior to transferring the light emitting device and the light conditioning layer to a target substrate, the method further comprises:

10. The manufacturing method according to claim 8 or 9, wherein after collectively transferring the light-emitting device and the optical modifier to a target substrate when the optical modifier layer includes a light-blocking layer, the method further comprises:

11. The manufacturing method according to any one of claims 1 to 6, wherein the bonding the first transfer structure and the second transfer structure includes:

12. The manufacturing method according to claim 11, wherein a depth range of the light emitting device recessed into the light adjustment layer is smaller than a thickness of the light emitting device.

13. The manufacturing method according to any one of claims 1 to 7, wherein the forming of the first transfer structure includes:

forming the first transfer layer on the first transfer substrate;

and stripping the epitaxial substrate.

14. A method of manufacturing a display panel, comprising:

peeling the first transfer substrate and the first transfer layer;

15. A display panel, comprising:

a target substrate;

a plurality of light emitting devices on the target substrate;

16. The display panel according to claim 15,

the light emitting device is at least partially embedded in the light adjusting portion.

17. The display panel according to claim 15,

the light adjusting part surrounds the light emitting device and exposes at least part of the surface of the light emitting device far away from the target substrate.

18. A display device comprising the display panel according to any one of claims 15 to 17.