CN114361001A - Automatic diamond film manufacturing method and microwave plasma control system - Google Patents

Automatic diamond film manufacturing method and microwave plasma control system Download PDF

Info

Publication number
CN114361001A
CN114361001A CN202210004561.3A CN202210004561A CN114361001A CN 114361001 A CN114361001 A CN 114361001A CN 202210004561 A CN202210004561 A CN 202210004561A CN 114361001 A CN114361001 A CN 114361001A
Authority
CN
China
Prior art keywords
flow
control device
vacuum degree
temperature
diamond film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210004561.3A
Other languages
Chinese (zh)
Inventor
李俊宏
何磊
刘文科
韦明勉
李家瑞
李东亚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chengdu Wattsine Electronic Technology Co ltd
Original Assignee
Chengdu Wattsine Electronic Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chengdu Wattsine Electronic Technology Co ltd filed Critical Chengdu Wattsine Electronic Technology Co ltd
Priority to CN202210004561.3A priority Critical patent/CN114361001A/en
Publication of CN114361001A publication Critical patent/CN114361001A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C30B25/205—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer the substrate being of insulating material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3323—Problems associated with coating uniformity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3326—Problems associated with coating high speed

Abstract

The embodiment of the invention provides a diamond film automatic manufacturing method and a microwave plasma control system, wherein the microwave plasma control system responds to user operation and selects one or more of a preset vacuum extraction flow, a glow starting flow, a heating flow, a crystal seed etching flow, a single crystal growth flow, a cooling flow, an equipment shutdown flow, a crystal cleaning flow, a cavity cleaning flow and an evacuation flow; and (4) manufacturing the diamond film according to the selected flow. The microwave plasma control system is used for manufacturing the diamond film according to a preset process flow, so that the temperature, the pressure and the vacuum value of the seed crystal growth process can meet set values, the uniform deposition of the surface of the seed crystal is further ensured, and the production efficiency is improved.

Description

Automatic diamond film manufacturing method and microwave plasma control system
Technical Field
The invention relates to the technical field of microwave plasma, in particular to an automatic diamond film manufacturing method and a microwave plasma control system.
Background
The microwave plasma chemical vapor deposition device is suitable for diamond production, and a diamond film is formed by depositing reaction gas which is plasmatized on the surface of a seed crystal of a tray. To achieve mass production, the seed crystals are placed in an array on the tray. The problem to be solved at present is how to ensure the uniform deposition on the surface of the seed crystal and improve the production efficiency.
Disclosure of Invention
The invention aims to provide an automatic diamond film manufacturing method and a microwave plasma control system, which can ensure uniform deposition on the surface of a seed crystal and improve the production efficiency.
In order to achieve the above purpose, the embodiment of the present invention adopts the following technical solutions:
in a first aspect, an embodiment of the present invention provides an automatic manufacturing method for a diamond film, which is applied to a microwave plasma control system, and the method includes:
responding to user operation;
selecting one or a plurality of random combinations from a preset vacuum extraction flow, a glow starting flow, a temperature rising flow, a seed crystal etching flow, a single crystal growth flow, a temperature lowering flow, an equipment shutdown flow, a crystal cleaning flow, a cavity cleaning flow and an emptying flow;
and (4) manufacturing the diamond film according to the selected flow.
Further, the step of making a diamond film according to the selected process comprises:
if the selected flow is a vacuum pumping flow, starting the mechanical pump, opening a valve set to be opened, and switching the butterfly valve to a full-open state;
judging whether the real-time vacuum degree in the cavity reaches a first target vacuum degree;
if the real-time vacuum degree is smaller than the first target vacuum degree, starting the molecular pump;
and if the real-time vacuum degree is greater than the first target vacuum degree, maintaining the real-time vacuum degree to be greater than the first target vacuum degree for a first preset time.
Further, the step of making a diamond film according to the selected process comprises:
if the selected flow is a glow starting flow, starting the mechanical pump, opening a valve set to be opened, and switching the butterfly valve to a control state;
moving the sample table and the cavity plate to a set position in a servo mode;
the pressure, power and gas flow are controlled to set first target values.
Further, the step of making a diamond film according to the selected process comprises:
if the selected flow is a temperature rise flow, starting the mechanical pump, opening a valve set to be opened, and switching the butterfly valve to a control state;
controlling the gas flow to a set second target value;
the power or pressure is controlled to a set third target value so that the warming is completed.
Further, the step of making a diamond film according to the selected process comprises:
if the selected flow is a crystal seed etching flow, starting the mechanical pump, opening a valve set to be opened, and switching the butterfly valve to a control state;
controlling the flow of gas to a set fourth target value;
controlling the power, pressure or temperature to a set fifth target value;
controlling the power, pressure or temperature within a first preset range within a preset holding time.
Further, the step of making a diamond film according to the selected process comprises:
if the selected flow is a single crystal growth flow, starting the mechanical pump, opening a valve set to be opened, and switching the butterfly valve to a control state;
controlling the power, pressure or temperature to a set sixth target value;
controlling the power, pressure or temperature within a second preset range within a preset holding time.
Further, the step of making a diamond film according to the selected process comprises:
if the selected flow is a cooling flow, starting the mechanical pump, opening a valve set to be opened, and switching the butterfly valve to a control state;
controlling the gas flow to a set seventh target value;
and controlling the power or the pressure to the set eighth target value so as to finish the temperature reduction.
Further, the step of making a diamond film according to the selected process comprises:
if the selected process is a crystal cleaning process and a cavity cleaning process, the processes sequentially enter a vacuum extraction process, a glow starting process, a temperature rising process, a crystal seed etching process, a temperature reduction process and an equipment shutdown process.
Further, the step of making a diamond film according to the selected process comprises:
if the selected flow is an emptying flow, starting the mechanical pump, opening a valve set to be opened, and switching the butterfly valve to a full-open state;
judging whether the real-time vacuum degree in the cavity reaches a second target vacuum degree;
if the real-time vacuum degree is smaller than the second target vacuum degree, starting the molecular pump;
and if the real-time vacuum degree is greater than the second target vacuum degree, maintaining the real-time vacuum degree to be greater than the second target vacuum degree for a second preset time.
In a second aspect, an embodiment of the present invention further provides a microwave plasma control system, including a main control device and a human-computer interaction device, where the main control device is in communication connection with the human-computer interaction device;
the main control device is used for responding to the operation of a user on the human-computer interaction device;
the main control device is also used for selecting one or a plurality of random combinations from a preset vacuum extraction flow, a glow starting flow, a temperature rising flow, a crystal seed etching flow, a single crystal growth flow, a temperature lowering flow, an equipment shutdown flow, a crystal cleaning flow, a cavity cleaning flow and an emptying flow according to the operation of the user;
the main control device is also used for manufacturing the diamond film according to the selected flow.
The diamond film automatic manufacturing method and the microwave plasma control system provided by the embodiment of the invention have the beneficial effects that: responding to user operation through a microwave plasma control system, and selecting one or a plurality of random combinations from a preset vacuum extraction flow, a glow starting flow, a temperature rising flow, a seed crystal etching flow, a single crystal growth flow, a temperature lowering flow, an equipment shutdown flow, a crystal cleaning flow, a cavity cleaning flow and an emptying flow; and (4) manufacturing the diamond film according to the selected flow. Through various process flows carried by a microwave plasma control system, automatic process flexible configuration can be carried out, and the process requirements of different users are met; and the microwave plasma control system is used for manufacturing the diamond film according to a preset process flow, so that the temperature, the pressure and the vacuum value in the seed crystal growth process can meet set values, the uniform deposition on the surface of the seed crystal is further ensured, and the production efficiency is improved.
In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram illustrating a microwave plasma control system according to an embodiment of the present invention;
FIG. 2 is a schematic flow chart illustrating an automatic manufacturing method of a diamond film according to an embodiment of the present invention;
FIG. 3 is a schematic flow chart illustrating another method for automatically fabricating a diamond film according to an embodiment of the present invention;
FIG. 4 is a schematic flow chart illustrating a method for automatically fabricating a diamond film according to an embodiment of the present invention;
FIG. 5 is a schematic flow chart illustrating a further method for automatically fabricating a diamond film according to an embodiment of the present invention;
FIG. 6 is a schematic flow chart illustrating a further method for automatically fabricating a diamond film according to an embodiment of the present invention;
FIG. 7 is a schematic flow chart illustrating a further method for automatically fabricating a diamond film according to an embodiment of the present invention;
FIG. 8 is a schematic flow chart illustrating a further method for automatically fabricating a diamond film according to an embodiment of the present invention;
fig. 9 is a schematic flow chart illustrating another method for automatically manufacturing a diamond film according to an embodiment of the present invention.
Reference numerals: 100-microwave plasma control system; 110-a master control device; 120-gas path control device; 130-vacuum pressure control means; 140-a waterway control device; 150-a visual interaction device; 160-a human-computer interaction device; 170-IOT interaction means; 180-power control means; 190-protective device.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Meanwhile, in the description of the present invention, the terms "first", "second", and the like are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance.
As shown in fig. 1, which is a schematic structural diagram of a microwave plasma control system 100 according to an embodiment of the present invention, the microwave plasma control system 100 includes a main control device 110 and a human-computer interaction device 160, and the main control device 110 is in communication connection with the human-computer interaction device 160.
The main control device 110 is used for responding to the operation of the user on the human-computer interaction device 160; the main control device 110 is further configured to select one or a plurality of arbitrary combinations from a preset vacuum extraction flow, a glow starting flow, a temperature raising flow, a seed crystal etching flow, a single crystal growth flow, a temperature lowering flow, an equipment shutdown flow, a crystal cleaning flow, a cavity cleaning flow and an evacuation flow according to the operation of a user; the master control unit 110 is also used to perform diamond film fabrication according to a selected process.
It should be understood that the human-computer interaction device 160 is a user interaction interface, and a user can visually observe the operation state of the apparatus and set target parameters, etc. through a touch display of the human-computer interaction device 160. The human-computer interaction device 160 may also provide a user with manual and automatic flow setting functions.
When a user selects to manually set a flow function, the user is required to confirm whether the cooling water function is normal, and if the cooling water function is normal, the cavity is cleaned; after cleaning, manually wiping the cavity; after wiping, placing a standard object and closing the cavity door; after the placing, carrying out vacuum-pumping operation until the vacuum value in the cavity reaches e-3 Torr; after the vacuum value meets the requirement, switching on and off the hydrogen for several times in the amount of 400SCCM, setting the vacuum value to 800SCCM, keeping the pressure for 5 minutes, and finally setting the pressure to 400 SCCM; after cleaning, carrying out an etching process, wherein in the etching process, the power is initially set to be 500W, and the pressure is initially set to be 7Torr until the temperature reaches 700 ℃; in the process of reaching 700 ℃, the reflected power is adjusted to be 0, and the positions of the cavity plate and the sample stage are adjusted according to the shape of the plasma sphere to ensure that quartz on the upper part of the cavity has no plasma until the temperature reaches 700 ℃; after the temperature reaches 700 ℃, in the cavity etching process, setting the hydrogen to be 200SCCM, introducing oxygen, setting the oxygen amount to be 5, setting the etching time to be 1 hour, and after the etching is finished, closing the oxygen; after the temperature reaches 700 ℃, in the seed crystal etching process, hydrogen is set to be 200SCCM, oxygen is introduced, the oxygen amount is set to be 4, the etching time is set to be 1 hour, and after the etching is finished, the oxygen is closed. In the growth process of the seed crystal, proper hydrogen, methane and temperature are set according to a target object and a growth target.
In the cleaning process, the hydrogen amount and the on-off time are set, so that the cleaning efficiency can be improved, and the cleaning quality can be ensured. In the etching process, the stability and accuracy of etching can be ensured by setting power, pressure, temperature, hydrogen and oxygen.
When the user selects the automatic setting flow function, the user can perform automatic process flexible selection configuration from preset vacuum extraction flow, glow starting flow, temperature rising flow, crystal seed etching flow, single crystal growth flow, temperature lowering flow, equipment shutdown flow, crystal cleaning flow, cavity cleaning flow and emptying flow, and the process flows can be combined at will to achieve a full-automatic working state so as to meet the process requirements of different users.
Referring to fig. 1, the microwave plasma control system further includes an air path control device 120, a vacuum pressure control device 130, and a water path control device 140, wherein the main control device 110 is communicatively connected to the air path control device 120, the vacuum pressure control device 130, and the water path control device 140.
The main control device 110 cooperates with the air path control device 120, the vacuum pressure control device 130 and the water path control device 140 to perform diamond film manufacturing according to a selected process.
The main control device 110 adjusts the temperature, pressure and vacuum value of the seed crystal growth process in real time through the gas circuit control device 120, the vacuum pressure control device 130 and the water circuit control device 140, and detects each index of the system through each angle to ensure the growth of the seed crystal.
The main control device 110 is used for performing threshold setting, startup and shutdown, gas flow ratio, vacuum pressure ratio, temperature and flow parameter setting, complete machine interconnection, water and electricity fire safety detection and the like according to the target parameters, the working data of the gas circuit control device 120, the working data of the vacuum pressure control device 130 and the working data of the water circuit control device 140, completing monitoring state information quantification, and performing remote interaction through a TCP/IP protocol.
The main control device 110 issues various control instructions and flow control to the air path control device 120, the vacuum pressure control device 130 and the water path control device 140 through the switch, and adjusts the gas flow ratio in real time according to the working data, thereby completing the flow data quantification, the gas flow monitoring and providing the alarm information. Wherein the control instructions and flow control are obtained according to the selected flow.
The vacuum pressure control device 130 is used for controlling the vacuum state in the cavity according to a control instruction, such as vacuum breaking, vacuum pumping, and real-time control of the vacuum state; the position of the sample table is also controlled, and the sample table can be adjusted up and down and the wall plate can be controlled to be adjusted up and down to realize the position control of the sample table; the opening and the rotating of the cavity cover can be controlled through the servo controller, so that the opening and the closing of the cavity cover are realized; and quantizes the data of each node and uploads the data to the main control device 110 through the network interface.
The gas circuit control device 120 is used for controlling the five-way gas switch and the gas flow control according to the control instruction, adjusting the gas flow ratio in real time according to the working state of the five-way gas switch, completing the flow data quantization and the gas flow monitoring, and providing alarm information.
The waterway control device 140 is used for controlling the temperature of the sample stage, the temperature of 8 inlet and outlet water of the acquisition cavity cover, the water temperature and water flow of the sample stage and the like through a closed-loop algorithm, and quantifying the data of each node and uploading the data to the main control device 110 through a network interface.
Further, the main control device 110 may adopt an industrial personal computer, or may adopt embedded hardware (such as an MCU of an ARM structure), issues parameters of each working node to the air channel control device 120, the vacuum pressure control device 130, and the water channel control device 140 according to target parameters, and integrates working data fed back by the air channel control device 120, the vacuum pressure control device 130, and the water channel control device 140, and adjusts process parameters of the air channel control device 120, the vacuum pressure control device 130, and the water channel control device 140 in real time.
It should be understood that the main control device 110 is further configured to obtain target parameters according to a preset automatic process flow, and the gas circuit control device 120, the vacuum pressure control device 130 and the water circuit control device 140 automatically obtain the target parameters at each node to achieve a fully automatic working state. Each node of the gas circuit control device 120, the vacuum pressure control device 130 and the water circuit control device 140 includes an evacuation node, a vacuum pumping node, a glow starting node, an automatic temperature rising node, a seed crystal etching node, a single crystal growth node, an automatic temperature lowering node, an equipment shutdown node, a crystal cleaning node and a cavity cleaning node.
In this embodiment, the gas path control device 120 is further configured to determine whether the communication connection with the main control device 110 is successful, and if the communication connection with the main control device is failed, check whether the communication parameters are abnormal; if the control command is a read command, the gas circuit control device 120 is further configured to obtain state information and a gas feedback value of the gas switch, and feed back the state information and the gas feedback value of the gas switch to the main control device 110; and if the control command is a write command, controlling the gas flow ratio and the gas switch according to the control command.
It should be understood that the gas circuit control device 120 cooperates with the main control device 110 to collect the flow rate of each gas flow controller in real time, and control the opening or closing of the gas. That is, the working data of the gas circuit control device 120 includes the flow rate of each gas flow controller, and the gas circuit control device 120 controls the gas switch to be turned on or off according to the control instruction to adjust the gas flow ratio.
Before determining whether the communication connection between the gas path control device 120 and the main control device 110 is successful, the gas path control device 120 first determines whether the initialization is successful, and if the initialization is failed, detects the state or circuit connection; if the communication is successful, starting to establish communication connection with the main control device 110, and judging whether the communication connection with the main control device 110 is successful, if the communication connection is failed, checking whether the communication parameters are abnormal; if the control command is the read command, acquiring the state information and the gas feedback value of the gas switch, and feeding back the state information and the gas feedback value of the gas switch to the main control device 110; and if the control command is a write command, controlling the gas flow ratio and the gas switch according to the control command.
In this embodiment, the vacuum pressure control device 130 cooperates with the main control device 110 to open or close each valve control switch, evacuate the degree, set and measure pressure parameters, and the like.
It should be understood that the vacuum pressure control device 130 is also used for collecting the vacuum value in the cavity, performing analog-to-digital conversion on the vacuum value, and feeding back the converted vacuum value to the main control device 110. The vacuum pressure control device 130 collects vacuum values in an ADC sampling mode, the vacuum pressure control device 130 firstly sets ADC sampling parameters and channels, collects simulated vacuum values, converts analog digital quantities and calculates real intracavity vacuum values.
The vacuum pressure control device 130 is further configured to determine whether the communication connection with the main control device 110 is successful, and if the communication connection fails, check whether the communication parameters are abnormal; if the control command is a read command, the phase-sequence state is obtained, and the phase-sequence state is fed back to the main control device 110; if the control instruction is a write instruction, the position of the sample stage, the position of the wall plate and the opening and closing of the cavity cover are controlled according to the control instruction, and the state information of the sample stage and the vacuum state information in the cavity are fed back to the main control device 110.
Before determining whether the communication connection between the vacuum pressure control device 130 and the main control device 110 is successful, the vacuum pressure control device first determines whether the initialization is successful, and if the initialization is failed, the state or the circuit connection is detected; if the communication is successful, starting to establish communication connection with the main control device 110, and judging whether the communication connection with the main control device 110 is successful, if the communication connection is failed, checking whether the communication parameters are abnormal; if the command is successful, receiving the control command, performing modbus protocol analysis, judging whether the control command is a read command or a write command, if the control command is a read command, acquiring a phase sequence state, judging the phase sequence state, if the phase sequence state is normal, feeding back the phase sequence state to the main control device 110, if the phase sequence state is abnormal, detecting parameter configuration and circuit state, and feeding back parameter configuration information and circuit state to the main control device 110.
If the control instruction is a write instruction, the position of the sample stage, the position of the wall plate and the opening and closing of the cavity cover are controlled according to the control instruction, and the state information of the sample stage and the vacuum state information in the cavity are fed back to the main control device 110. It should be understood that the vacuum pressure control device 130 is further configured to set a servo position of the cavity plate sample stage, control a servo start of the cavity plate sample stage, a servo reset of the cavity plate sample stage, and a control of a mechanical pump switching valve according to the control instruction, detect in real time whether the servo is started, a preparation state of the cavity plate sample stage, a current setting value of the cavity plate sample stage, a valve state, an intra-cavity pressure value, and a valve opening value, and feed back the preparation state of the cavity plate sample stage, the current setting value of the cavity plate sample stage, the valve state, the intra-cavity pressure value, and the valve opening value to the main control device 110.
In this embodiment, the waterway control device 140 includes a main control module and a cavity cover control module, and the main control module is responsible for collecting water temperature and water flow parameters of each waterway inside the host and setting the water flow of the sample stage. The cavity cover control module is responsible for collecting parameters of water temperature and water flow of each road on the cavity cover.
It should be understood that the waterway control device 140 is configured to determine whether the communication connection with the main control device 110 is successful, and if the communication connection with the main control device is failed, check whether the communication parameters are abnormal; if the control command is a read command, the water path control device 140 is further configured to obtain water flow information and temperature information, and feed back the water flow information and the temperature information to the main control device 110; and if the control instruction is a write instruction, controlling the temperature and the water flow of the sample stage according to the control instruction.
Wherein, the collection principle of temperature and discharge is: the waterway control device 140 collects temperature and water flow by adopting an ADC sampling mode, the waterway control device 140 first sets ADC sampling parameters and a channel, collects simulated temperature and water flow, performs analog digital quantity conversion, calculates real temperature and water flow, and feeds back the temperature and water flow to the main control device 110.
Before determining whether the communication connection between the waterway control device 140 and the main control device 110 is successful, determining whether the initialization is successful, and if the initialization is failed, detecting the state or circuit connection; if the communication is successful, starting to establish communication connection with the main control device 110, and judging whether the communication connection with the main control device 110 is successful, if the communication connection is failed, checking whether the communication parameters are abnormal; if the control command is the read command, water flow information and temperature information are obtained, and the water flow information and the temperature information are fed back to the main control device 110.
And if the control instruction is a write instruction, controlling the temperature and the water flow of the sample stage according to the control instruction. Namely, the set values of water flow and temperature are obtained according to the control instruction, and the temperature and the water flow of the sample stage are adjusted according to the set values.
In this embodiment, if the selected process is a vacuum pumping process, the working principle of the main control device 110, the air path control device 120, the vacuum pressure control device 130 and the water path control device 140 is as follows: starting the mechanical pump to switch the butterfly valve to a full-open state; opening a valve set to open; judging whether the real-time vacuum degree in the cavity reaches a first target vacuum degree; if the real-time vacuum degree is smaller than the first target vacuum degree, starting the molecular pump; and if the real-time vacuum degree is greater than the first target vacuum degree, maintaining the real-time vacuum degree to be greater than the first target vacuum degree for a first preset time.
It should be appreciated that the master control 110 activates the mechanical pump to switch the butterfly valve to the fully open state; the main control device 110 sends a control instruction to the vacuum pressure control device 130, and the vacuum pressure control device 130 opens the corresponding valve according to the control instruction and judges whether the real-time vacuum degree in the cavity reaches a first target vacuum degree; if the real-time vacuum degree is smaller than the first target vacuum degree, starting the molecular pump; and if the real-time vacuum degree is greater than the first target vacuum degree, maintaining the real-time vacuum degree greater than the first target vacuum degree for a first preset time, closing the molecular pump and the corresponding valve after the first preset time is reached, maintaining the butterfly valve in a fully open state, and maintaining the mechanical pump in an open state.
Wherein, the butterfly valve can be an MKS butterfly valve.
In this embodiment, if the selected flow is a glow starting flow, the working principle of the main control device 110, the air path control device 120, the vacuum pressure control device 130 and the water path control device 140 in cooperation is as follows: starting the mechanical pump, opening the valve set to be opened, and switching the butterfly valve to a control state; moving the sample table and the cavity plate to a set position in a servo mode; the pressure, power and gas flow are controlled to set first target values.
It should be appreciated that the master control 110 activates the mechanical pump to switch the butterfly valve to the control state; the main control device 110 sends a control instruction to the gas path control device 120, and the gas path control device 120 opens a corresponding valve according to the control instruction to control the gas flow to a set first target value; the vacuum pressure control device 130 moves the sample stage and the cavity plate to set positions in a servo mode according to control instructions; the master control 110 also controls the solid state source voltage and the rf turn on to control the pressure and power to the set first target values. Wherein the first target value of the gas flow is 400SCCM, and the gas adopts hydrogen; the first target value of power was 500W and the first target value of pressure was 6 Torr.
In this embodiment, if the selected process is a temperature-raising process, the working principle of the main control device 110, the air path control device 120, the vacuum pressure control device 130 and the water path control device 140 is as follows: starting the mechanical pump, opening the valve set to be opened, and switching the butterfly valve to a control state; controlling the gas flow to a set second target value; and controlling the power or the pressure to a set third target value within preset time according to a preset rule so as to finish the temperature rise.
It should be understood that the master control 110 first activates the mechanical pump to switch the butterfly valve to the control state; the main control device 110 sends a control instruction to the gas path control device 120, and the gas path control device 120 opens a corresponding valve according to the control instruction to control the gas flow to a set second target value; the main control device 110 also controls the solid-state source voltage and the radio frequency to be turned on, and controls the power or the pressure to be a set third target value, so that the temperature rise is completed.
Wherein the second target value of the gas flow is 400SCCM, and the gas is hydrogen. If the temperature is set to 0, performing temperature rise control according to a third target value of power or pressure intensity; if the temperature setting is greater than 0, temperature rise control is performed according to the temperature.
In this embodiment, if the selected process is a seed crystal etching process, the working principle of the main control device 110, the air path control device 120, the vacuum pressure control device 130 and the water path control device 140 in cooperation is as follows: starting the mechanical pump, opening the valve set to be opened, and switching the butterfly valve to a control state; controlling the flow of gas to a set fourth target value; controlling the power, the pressure intensity or the temperature to a set fifth target value within preset time according to a preset rule; and controlling the power, the pressure or the temperature within a first preset range within a preset maintaining time.
It should be understood that the master control 110 first activates the mechanical pump to switch the butterfly valve to the control state; the main control device 110 sends a control instruction to the gas path control device 120, and the gas path control device 120 opens a corresponding valve according to the control instruction to control the gas flow to a set fourth target value; the main control device 110 further controls the solid-state source voltage and the radio frequency to be turned on, controls the power, the pressure or the temperature to a set fifth target value, and controls the power, the pressure or the temperature to be within a first preset range through the solid-state source voltage, the radio frequency and the waterway control device 140 within a preset maintaining time.
Wherein, the temperature is set to 0, and then the temperature control is carried out according to a fifth target value of the power or the pressure intensity; if the temperature setting is greater than 0, temperature control is performed according to a fifth target value of temperature. The first preset range is the upper and lower limit range of power, the upper and lower limit range of pressure intensity and the upper and lower limit range of temperature.
In this embodiment, if the selected process is a single crystal growth process, the working principle of the main control device 110, the gas path control device 120, the vacuum pressure control device 130 and the water path control device 140 is as follows: starting the mechanical pump, opening the valve set to be opened, and switching the butterfly valve to a control state; controlling the power, the pressure intensity or the temperature to a set sixth target value within preset time according to a preset rule; controlling the power, pressure or temperature within a second preset range within a preset holding time.
It should be understood that the master control 110 first activates the mechanical pump to switch the butterfly valve to the control state; the main control device 110 sends a control instruction to the gas path control device 120, and the gas path control device 120 opens a corresponding valve according to the control instruction to control the gas flow to a set target value; the main control device 110 further controls the solid-state source voltage and the radio frequency to be turned on, controls the power, the pressure or the temperature to a set sixth target value, and controls the power, the pressure or the temperature to be within a second preset range through the solid-state source voltage, the radio frequency and the waterway control device 140 within a preset maintaining time.
Wherein, the temperature is set to 0, and then the temperature control is carried out according to a sixth target value of the power or the pressure intensity; if the temperature setting is greater than 0, temperature control is performed according to a sixth target value of temperature. The second preset range is the upper and lower limit range of power, the upper and lower limit range of pressure and the upper and lower limit range of temperature.
In this embodiment, if the selected flow is a cooling flow, the working principle of the main control device 110, the air path control device 120, the vacuum pressure control device 130, and the water path control device 140 in cooperation is as follows: starting the mechanical pump, opening the valve set to be opened, and switching the butterfly valve to a control state; controlling the gas flow to a set seventh target value; and controlling the power or the pressure to the set eighth target value so as to finish the temperature reduction.
It should be understood that the master control 110 first activates the mechanical pump to switch the butterfly valve to the control state; the main control device 110 sends a control instruction to the gas path control device 120, and the gas path control device 120 opens a corresponding valve according to the control instruction to control the gas flow to a set seventh target value; the main control device 110 further controls the solid-state source voltage and the radio frequency to be turned on, and controls the power or the pressure to be a set eighth target value, so that the temperature reduction is completed.
Wherein, the temperature is set to 0, and then the temperature control is carried out according to the eighth target value of the power or the pressure intensity; if the temperature setting is greater than 0, temperature control is performed in accordance with the target value of temperature.
In this embodiment, if the selected process is an equipment shutdown process, the working principle of the main control device 110, the air path control device 120, the vacuum pressure control device 130, and the water path control device 140 in cooperation is as follows: starting the mechanical pump, closing the valve set to be closed, and switching the butterfly valve to a control state; controlling the gas flow to 0; and turning off the radio frequency and the power supply of the solid-state source, switching to a full-open state, and controlling the power and the pressure to be 0.
In this embodiment, if the selected process is an evacuation process, the working principle of the main control device 110, the air path control device 120, the vacuum pressure control device 130 and the water path control device 140 is as follows: starting the mechanical pump, opening the valve set to be opened, and switching the butterfly valve to a full-open state; judging whether the real-time vacuum degree in the cavity reaches a second target vacuum degree; if the real-time vacuum degree is smaller than the second target vacuum degree, starting the molecular pump; and if the real-time vacuum degree is greater than the second target vacuum degree, maintaining the real-time vacuum degree to be greater than the second target vacuum degree for a second preset time.
It should be appreciated that the master control 110 first activates the mechanical pump to switch the butterfly valve to the fully open state; the main control device 110 sends a control instruction to the vacuum pressure control device 130, and the vacuum pressure control device 130 opens the corresponding valve according to the control instruction and judges whether the real-time vacuum degree in the cavity reaches a second target vacuum degree; if the real-time vacuum degree is smaller than the second target vacuum degree, starting the molecular pump; and if the real-time vacuum degree is greater than the second target vacuum degree, maintaining the real-time vacuum degree greater than the second target vacuum degree for a second preset time, closing the molecular pump and the valve after the second preset time is reached, maintaining the butterfly valve to be fully opened, and maintaining the mechanical pump to be in an opening state. Wherein the second target vacuum level can be set at 0.0035 Torr.
In this embodiment, if the selected process is a crystal cleaning process and a chamber cleaning process, the process sequentially enters a vacuum pumping process, a glow starting process, a temperature raising process, a seed crystal etching process, a temperature lowering process, and an equipment shutdown process.
With reference to fig. 1, the microwave plasma control system 100 further includes a visual interaction device 150, wherein the visual interaction device 150 is communicatively connected to the main control device 110; the visual interaction device 150 is used for acquiring image information in the cavity in real time and sending the image information to the main control device 110; the main control device 110 is also used for performing operation processing according to the image information to obtain the seed crystal growth state information. Wherein, the seed crystal growth state information comprises plasma position, state, relative offset and the like.
It should be understood that the visual interaction device 150 comprises high-definition camera devices arranged in three different directions, and the growth temperature and the growth state of the seed crystal can be monitored in real time more comprehensively and accurately through the high-definition camera devices in the three different directions. And the camera equipment is adopted to acquire image information in the cavity and display and observe the image information, so that the damage of strong light in the cavity to eyes can be avoided by directly observing the eyes.
With continued reference to fig. 1, the microwave plasma control system 100 further includes an IOT (internet of things) interaction device, a power control device, and a protection device 190, and the main control device 110 is communicatively connected to the IOT interaction device 170, the power control device 180, and the protection device 190.
The IOT interacting device 170 may quickly access the microwave plasma control system 100 to the internet of things for convenient real-time acquisition and monitoring at a later time.
The main control device 110 is used for setting various parameters of the power control device 180, so that the power control device 180 provides high-power radio frequency energy for the whole system and provides a high-temperature environment for seed crystal growth. Each parameter includes a power switch parameter, a radio frequency switch parameter, a power output parameter, and the like. The power control device 180 is further configured to report working states of working voltage, working current, working temperature, output power, reflected power, inlet/outlet water flow, inlet/outlet water temperature, and the like to the main control device 110 in real time.
The protection device 190 is used for realizing the functions of detecting and protecting the temperature of the sample stage, the temperature of inlet and outlet water, working voltage, working current, cavity pressure and the working state of ignition plasma, and ensuring the reliable operation of a power source.
Referring to fig. 2, fig. 2 is a schematic flow chart of an automatic diamond film manufacturing method provided in the embodiment of the present application on the basis of the microwave plasma control system 100 shown in fig. 1, where the automatic diamond film manufacturing method includes the following steps:
and S110, responding to the user operation.
S120, selecting one or a plurality of random combinations from a preset vacuum extraction flow, a glow starting flow, a temperature rising flow, a crystal seed etching flow, a single crystal growth flow, a temperature lowering flow, an equipment shutdown flow, a crystal cleaning flow, a cavity cleaning flow and an emptying flow.
And S130, manufacturing the diamond film according to the selected flow.
It should be understood that the detailed implementation of steps S110-S130 may refer to the implementation of the main control device 110, the pneumatic control device 120, the vacuum pressure control device 130, and the hydraulic control device 140.
Referring to fig. 3, the step S130 includes the following sub-steps:
s131, if the selected process is a vacuum pumping process, starting the mechanical pump to switch the butterfly valve to a full-open state, and opening the valve set to be opened.
S132, judging whether the real-time vacuum degree in the cavity reaches the first target vacuum degree.
And S133, if the real-time vacuum degree is smaller than the first target vacuum degree, starting the molecular pump.
And S134, if the real-time vacuum degree is greater than the first target vacuum degree, maintaining the real-time vacuum degree to be greater than the first target vacuum degree for a first preset time.
Referring to fig. 4, the step S130 further includes the following sub-steps:
and S135, if the selected flow is a glow starting flow, starting the mechanical pump, opening the valve set to be opened, and switching the butterfly valve to a control state.
And S136, servo-moving the sample stage and the cavity plate to set positions.
And S137, controlling the pressure, the power and the gas flow to the set first target value.
Referring to fig. 5, the step S130 further includes the following sub-steps:
s138, if the selected flow is a temperature rising flow, starting the mechanical pump, opening the valve set to be opened, and switching the butterfly valve to a control state.
And S139, controlling the gas flow rate to a set second target value.
And S1301, controlling the power or the pressure to a set third target value so as to finish temperature rise.
Referring to fig. 6, the step S130 further includes the following sub-steps:
s1302, if the selected flow is a seed crystal etching flow, starting the mechanical pump, opening a valve set to be opened, and switching the butterfly valve to a control state.
S1303, the gas flow rate is controlled to a set fourth target value.
And S1304, controlling the power, the pressure or the temperature to a set fifth target value.
And S1305, controlling the power, the pressure or the temperature within a first preset range within a preset maintaining time.
Referring to fig. 7, the step S130 further includes the following sub-steps:
s1306, if the selected flow is a single crystal growth flow, starting the mechanical pump, and opening the valve set to open, and switching the butterfly valve to a control state.
And S1307, controlling the power, the pressure or the temperature to a set sixth target value within a preset time according to a preset rule.
And S1308, controlling the power, the pressure or the temperature within a second preset range within a preset maintaining time.
Referring to fig. 8, the step S130 further includes the following sub-steps:
and S1309, if the selected flow is a cooling flow, starting the mechanical pump, opening the valve set to be opened, and switching the butterfly valve to a control state.
S1310, the gas flow rate is controlled to a set seventh target value.
S1311, the power or pressure is controlled to the set eighth target value so that the temperature reduction is completed.
Referring to fig. 9, the step S130 further includes the following sub-steps:
s1312, if the selected flow is an evacuation flow, the mechanical pump is started, and the valve set to open is opened, and the butterfly valve is switched to a full open state.
And S1313, judging whether the real-time vacuum degree in the cavity reaches a second target vacuum degree.
And S1314, if the real-time vacuum degree is smaller than the second target vacuum degree, starting the molecular pump.
And S1315, if the real-time vacuum degree is greater than the second target vacuum degree, maintaining the real-time vacuum degree to be greater than the second target vacuum degree for a second preset time.
It should be understood that the detailed implementation of steps S131-S1315 may refer to the implementation of the main control device 110, the pneumatic control device 120, the vacuum pressure control device 130, and the hydraulic control device 140.
In summary, the embodiments of the present invention provide an automatic diamond film manufacturing method and a microwave plasma control system, which respond to user operations through the microwave plasma control system, and select one of a preset vacuum pumping process, a glow starting process, a temperature raising process, a seed crystal etching process, a single crystal growth process, a temperature lowering process, an equipment shutdown process, a crystal cleaning process, a cavity cleaning process, and an evacuation process, or select any combination of a plurality of processes; and (4) manufacturing the diamond film according to the selected flow. Through various process flows carried by a microwave plasma control system, automatic process flexible configuration can be carried out, and the process requirements of different users are met; and the microwave plasma control system is used for manufacturing the diamond film according to a preset process flow, so that the temperature, the pressure and the vacuum value in the seed crystal growth process can meet set values, the uniform deposition on the surface of the seed crystal is further ensured, and the production efficiency is improved.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.

Claims (10)

1. An automatic manufacturing method of a diamond film is characterized by being applied to a microwave plasma control system, and the method comprises the following steps:
responding to user operation;
selecting one or a plurality of random combinations from a preset vacuum extraction flow, a glow starting flow, a temperature rising flow, a seed crystal etching flow, a single crystal growth flow, a temperature lowering flow, an equipment shutdown flow, a crystal cleaning flow, a cavity cleaning flow and an emptying flow;
and (4) manufacturing the diamond film according to the selected flow.
2. The method of claim 1, wherein the step of performing diamond film fabrication according to the selected process comprises:
if the selected flow is a vacuum pumping flow, starting a mechanical pump to switch the butterfly valve to a full-open state, and opening a valve set to be opened;
judging whether the real-time vacuum degree in the cavity reaches a first target vacuum degree;
if the real-time vacuum degree is smaller than the first target vacuum degree, starting the molecular pump;
and if the real-time vacuum degree is greater than the first target vacuum degree, maintaining the real-time vacuum degree to be greater than the first target vacuum degree for a first preset time.
3. The method of claim 2, wherein the step of performing diamond film fabrication according to the selected process comprises:
if the selected flow is a glow starting flow, starting the mechanical pump, opening a valve set to be opened, and switching the butterfly valve to a control state;
moving the sample table and the cavity plate to a set position in a servo mode;
the pressure, power and gas flow are controlled to set first target values.
4. The method of claim 1, wherein the step of performing diamond film fabrication according to the selected process comprises:
if the selected flow is a temperature rise flow, starting the mechanical pump, opening a valve set to be opened, and switching the butterfly valve to a control state;
controlling the gas flow to a set second target value;
the power or pressure is controlled to a set third target value so that the warming is completed.
5. The method of claim 1, wherein the step of performing diamond film fabrication according to the selected process comprises:
if the selected flow is a crystal seed etching flow, starting the mechanical pump, opening a valve set to be opened, and switching the butterfly valve to a control state;
controlling the flow of gas to a set fourth target value;
controlling the power, pressure or temperature to a set fifth target value;
controlling the power, pressure or temperature within a first preset range within a preset holding time.
6. The method of claim 1, wherein the step of performing diamond film fabrication according to the selected process comprises:
if the selected flow is a single crystal growth flow, starting the mechanical pump, opening a valve set to be opened, and switching the butterfly valve to a control state;
controlling the power, pressure or temperature to a set sixth target value;
controlling the power, pressure or temperature within a second preset range within a preset holding time.
7. The method of claim 1, wherein the step of performing diamond film fabrication according to the selected process comprises:
if the selected flow is a cooling flow, starting the mechanical pump, opening a valve set to be opened, and switching the butterfly valve to a control state;
controlling the gas flow to a set seventh target value;
and controlling the power or the pressure to the set eighth target value so as to finish the temperature reduction.
8. The method of claim 1, wherein the step of performing diamond film fabrication according to the selected process comprises:
if the selected process is a crystal cleaning process and a cavity cleaning process, the processes sequentially enter a vacuum extraction process, a glow starting process, a temperature rising process, a crystal seed etching process, a temperature reduction process and an equipment shutdown process.
9. The method of claim 1, wherein the step of performing diamond film fabrication according to the selected process comprises:
if the selected flow is an emptying flow, starting the mechanical pump, opening a valve set to be opened, and switching the butterfly valve to a full-open state;
judging whether the real-time vacuum degree in the cavity reaches a second target vacuum degree;
if the real-time vacuum degree is smaller than the second target vacuum degree, starting the molecular pump;
and if the real-time vacuum degree is greater than the second target vacuum degree, maintaining the real-time vacuum degree to be greater than the second target vacuum degree for a second preset time.
10. A microwave plasma control system is characterized by comprising a main control device and a human-computer interaction device, wherein the main control device is in communication connection with the human-computer interaction device;
the main control device is used for responding to the operation of a user on the human-computer interaction device;
the main control device is also used for selecting one or a plurality of random combinations from a preset vacuum extraction flow, a glow starting flow, a temperature rising flow, a crystal seed etching flow, a single crystal growth flow, a temperature lowering flow, an equipment shutdown flow, a crystal cleaning flow, a cavity cleaning flow and an emptying flow according to the operation of the user;
the main control device is also used for manufacturing the diamond film according to the selected flow.
CN202210004561.3A 2022-01-04 2022-01-04 Automatic diamond film manufacturing method and microwave plasma control system Pending CN114361001A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210004561.3A CN114361001A (en) 2022-01-04 2022-01-04 Automatic diamond film manufacturing method and microwave plasma control system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210004561.3A CN114361001A (en) 2022-01-04 2022-01-04 Automatic diamond film manufacturing method and microwave plasma control system

Publications (1)

Publication Number Publication Date
CN114361001A true CN114361001A (en) 2022-04-15

Family

ID=81107758

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210004561.3A Pending CN114361001A (en) 2022-01-04 2022-01-04 Automatic diamond film manufacturing method and microwave plasma control system

Country Status (1)

Country Link
CN (1) CN114361001A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103037613A (en) * 2012-12-07 2013-04-10 常州中科常泰等离子体科技有限公司 Control system of full-automatic cold plasma seed processor
CN112030226A (en) * 2020-08-04 2020-12-04 西安电子科技大学 Diamond growth process control method and device based on PLC
CN112126910A (en) * 2020-08-04 2020-12-25 山西云矽电子科技有限公司 Control method in diamond growth system based on PLC
CN214572219U (en) * 2021-02-18 2021-11-02 成都纽曼和瑞微波技术有限公司 Microwave plasma vapor deposition system
CN113584458A (en) * 2021-07-05 2021-11-02 武汉工程大学 Method for preparing diamond film on potassium tantalate niobate crystal by microwave plasma chemical vapor deposition technology

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103037613A (en) * 2012-12-07 2013-04-10 常州中科常泰等离子体科技有限公司 Control system of full-automatic cold plasma seed processor
CN112030226A (en) * 2020-08-04 2020-12-04 西安电子科技大学 Diamond growth process control method and device based on PLC
CN112126910A (en) * 2020-08-04 2020-12-25 山西云矽电子科技有限公司 Control method in diamond growth system based on PLC
CN214572219U (en) * 2021-02-18 2021-11-02 成都纽曼和瑞微波技术有限公司 Microwave plasma vapor deposition system
CN113584458A (en) * 2021-07-05 2021-11-02 武汉工程大学 Method for preparing diamond film on potassium tantalate niobate crystal by microwave plasma chemical vapor deposition technology

Similar Documents

Publication Publication Date Title
TW466535B (en) Plasma processing method and apparatus with control of RF bias
TWI586225B (en) Hybrid impedance matching for inductively coupled plasma system
CN114334596B (en) Microwave plasma control method
CN114361001A (en) Automatic diamond film manufacturing method and microwave plasma control system
CN102031489A (en) AZO anti-reflecting film preparation method
CN109283394A (en) A kind of brightness conductivity and activation energy measuring system and method
CN106567044A (en) Film preparation cavity and method
CN115896933A (en) Large-size diamond, MPCVD device and large-size diamond preparation method
CN111734615A (en) Control system and control method for rear-stage pump of vacuum system
CN103762310B (en) Substrate pre-treatment equipment
CN102943244A (en) Preparation method for LiTaO3 film through ion beam enhanced deposition (IBED)
CN109881169A (en) A kind of magnesium base alloy modulation film and its preparation method and application
CN111286725B (en) Control device and control method of PECVD (plasma enhanced chemical vapor deposition) coating equipment
CN206479802U (en) The Gain Automatic adjusting means of tungsten chemical deposition inner chamber plasma cleans terminal point control device
CN113900457B (en) Pressure zeroing method and semiconductor process equipment
CN111076937B (en) System and method for testing ablation quality of energetic working medium pulse plasma thruster
CN109961998B (en) Plasma processing device and control method based on thickness monitoring of focusing ring
Clark et al. A fully automated pulsed laser deposition system for HTS multilayer devices
TW201341566A (en) In situ monitoring extreme smooth thin film manufacturing process system and method thereof
WO2009070986A1 (en) A device of controlling the dc bias of rf discharge system and method thereof
CN219470170U (en) PVD equipment and PVD equipment assembly
CN204086922U (en) A kind of ion sputtering instrument control system
JP2569805B2 (en) Semiconductor manufacturing equipment
WO2023102776A1 (en) Mpcvd control system
CN112981366A (en) Preparation method of boron film in fusion device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination