CN114355680A - Pixel structure, array substrate and display panel - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 38
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Abstract
The invention provides a pixel structure, an array substrate and a display panel, wherein the pixel structure at least comprises: the pixel units are distributed in an array mode, each pixel unit at least comprises a main pixel area and a sub-pixel area, the main pixel area is provided with a main pixel electrode, and the sub-pixel area is provided with a sub-pixel electrode; each pixel unit at least comprises a first thin film transistor and a second thin film transistor, wherein the first thin film transistor is connected with the main pixel electrode and used for charging the main pixel electrode, and the second thin film transistor is connected with the sub-pixel electrode and used for charging the sub-pixel electrode; the charging capacity of the first thin film transistor is larger than that of the second thin film transistor. By adopting the pixel structure, the process difficulty is reduced and the production yield is improved on the premise of ensuring the improvement of color cast under a large visual angle.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the technical field of display, in particular to a pixel structure, an array substrate and a display panel.
[ background of the invention ]
A Liquid Crystal Display (LCD) panel is generally composed of a color filter substrate, a tft array substrate, and a liquid crystal layer disposed between the two substrates, and pixel electrodes and a common electrode are respectively disposed on opposite inner sides of the two substrates, and the liquid crystal display panel refracts light from a backlight module to generate a picture by applying a voltage to control liquid crystal molecules to change directions. Liquid crystal displays include Twisted Nematic (TN) mode, Super Twisted Nematic (ST N) mode, Vertical Alignment (VA) mode, and the like.
With the development of liquid crystal display technology, the size of the display screen of the display panel is getting larger and larger, and the poor appearance of color shift of the viewing angle is highlighted by adopting the four-Domain (4Domain) pixel conventionally. In order to improve the viewing angle performance of the panel, eight-Domain (8Domain) pixels are gradually applied to the design of a large-sized television panel, bisection is performed in the same pixel to form a main region and a sub region, and the rotation angles of liquid crystal molecules of four domains of the main pixel are different from those of four domains of the sub pixel, so that the effect of improving color cast is achieved. However, since the panel with high resolution and high refresh frequency is becoming the mainstream product, the pixels of the same size panel are smaller and smaller with the increase of resolution, and the charging of the pixels is more difficult with higher frequency, so that the optical transmittance (Tr%) and Contrast (CR) of the panel are not enough to meet the requirement of the customer.
Therefore, the prior art has defects and needs to be improved and developed.
[ summary of the invention ]
The invention provides a pixel structure, an array substrate and a display panel, which reduce the process difficulty and improve the production yield on the premise of ensuring the improvement of color cast under a large visual angle.
In order to solve the above problem, the present invention provides a pixel structure comprising: the pixel units are distributed in an array mode, each pixel unit at least comprises a main pixel area and a sub-pixel area, the main pixel area is provided with a main pixel electrode, and the sub-pixel area is provided with a sub-pixel electrode; each pixel unit at least comprises a first thin film transistor and a second thin film transistor, wherein the first thin film transistor is connected with the main pixel electrode and used for charging the main pixel electrode, and the second thin film transistor is connected with the sub-pixel electrode and used for charging the sub-pixel electrode; the charging capacity of the first thin film transistor is larger than that of the second thin film transistor.
The sum of the area of the main pixel electrode and the area of the sub-pixel electrode is larger than the area of the preset pixel electrode.
The first thin film transistor comprises a first channel, the second thin film transistor comprises a second channel, and the width-length ratio of the first channel is larger than that of the second channel.
The length of the first channel is consistent with that of the second channel, the width of the first channel is larger than that of the second channel, or the width of the first channel is consistent with that of the second channel, and the length of the first channel is smaller than that of the second channel.
The first thin film transistor is a U-shaped thin film transistor, and the second thin film transistor is an I-shaped thin film transistor.
The area of the main pixel electrode is larger than the area of the preset main pixel electrode, and/or the area of the sub-pixel electrode is larger than the area of the preset sub-pixel electrode.
The area of the sub-pixel electrode is larger than that of the main pixel electrode.
The first thin film transistor and the second thin film transistor share one source/drain electrode.
The embodiment of the present application further provides an array substrate, which includes: a substrate and a pixel electrode layer arranged in a stack, the pixel electrode layer comprising at least one pixel structure as described in any one of the above.
An embodiment of the present application further provides a display panel, where the display panel includes: the liquid crystal display panel comprises an array substrate, a color film substrate arranged opposite to the array substrate, and a liquid crystal layer positioned between the array substrate and the color film substrate.
The invention has the beneficial effects that: different from the prior art, the invention provides a pixel structure, an array substrate and a display panel, wherein the pixel structure comprises: the pixel units are distributed in an array mode, each pixel unit at least comprises a main pixel area and a sub-pixel area, the main pixel area is provided with a main pixel electrode, and the sub-pixel area is provided with a sub-pixel electrode; each pixel unit at least comprises a first thin film transistor and a second thin film transistor, wherein the first thin film transistor is connected with the main pixel electrode and used for charging the main pixel electrode, and the second thin film transistor is connected with the sub-pixel electrode and used for charging the sub-pixel electrode; the charging capacity of the first thin film transistor is larger than that of the second thin film transistor. By adopting the pixel structure, the process difficulty is reduced and the production yield is improved on the premise of ensuring the improvement of color cast under a large visual angle.
[ description of the drawings ]
Fig. 1 is a schematic structural diagram of a pixel structure provided in an embodiment of the present application;
fig. 2 is a schematic structural diagram of a pixel structure provided in the background art of the present application;
FIG. 3 is an enlarged schematic view of the first TFT in FIG. 1;
FIG. 4 is an enlarged schematic view of the second TFT in FIG. 1;
fig. 5 is a schematic structural diagram of a pixel structure provided in another embodiment of the present application;
fig. 6 is a schematic structural diagram of a display panel provided in an embodiment of the present application.
[ detailed description ] embodiments
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be noted that the following examples are only illustrative of the present invention, and do not limit the scope of the present invention. Likewise, the following examples are only some but not all examples of the present invention, and all other examples obtained by those skilled in the art without any inventive step are within the scope of the present invention.
Furthermore, the terms first, second, third, etc. as used herein may be used to describe various elements, but these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first species may be termed a second species, and, similarly, a second species may be termed a first species, without departing from the scope of the present application. Accordingly, the terminology used is for the purpose of describing and understanding the invention and is not intended to be limiting of the invention. In the various figures, elements of similar structure are identified by the same reference numerals. For purposes of clarity, the various features in the drawings are not necessarily drawn to scale. Moreover, some well-known elements may not be shown in the figures.
In addition, in the various figures, elements of similar structure are identified by the same reference numerals. When an element is described as being "connected to" another element, it can be directly "connected" or indirectly "connected" to the other element through an intermediate element.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings.
The invention provides a pixel structure 100, taking an eight-Domain (8Domain) pixel structure 100 as an example, as shown in fig. 1, which is a schematic structural diagram of the pixel structure 100 provided in an embodiment of the present application, and includes: the pixel units are distributed in an array mode, each pixel unit at least comprises a main pixel area A1 and a sub-pixel area A2, a main pixel electrode 110 is arranged in the main pixel area A1, and a sub-pixel electrode 120 is arranged in the sub-pixel area A2; each pixel unit at least comprises a first thin film transistor 130 and a second thin film transistor 140, wherein the first thin film transistor 130 is connected with the main pixel electrode 110 and used for charging the main pixel electrode 110, and the second thin film transistor 140 is connected with the sub-pixel electrode 120 and used for charging the sub-pixel electrode 120; the charging capability of the first thin film transistor 130 is greater than that of the second thin film transistor 140.
Specifically, as the size of the display screen of the display panel is increased along with the development of the liquid crystal display technology, the poor performance of the color shift of the viewing angle is highlighted by using the four-Domain (4Domain) pixel conventionally. In order to increase the viewing angle, many display panels, for example, Vertical Alignment (VA) liquid crystal display panels, may employ a pixel structure including a plurality of different liquid crystal Alignment regions, for example, each pixel unit of the pixel structure 100 is divided into a main pixel region a1 and a sub pixel region a2, and the liquid crystal molecules of the main pixel region a1 and the sub pixel region a2 are differently aligned. Preferably, when the area of the sub-pixel region a2 is 2 times that of the sub-pixel region a1, the effect of improving the viewing angle is the best.
To improve the color shift phenomenon, an eight-domain pixel structure 200 is taken as an example, as shown in fig. 2, which is a schematic structural diagram of a pixel structure 200 provided in the background art known by the inventor of the present application, and includes: the pixel units are distributed in an array mode, each pixel unit comprises a main pixel area B1 and a sub pixel area B2, a main pixel electrode 210 is arranged in the main pixel area B1, a sub pixel electrode 220 is arranged in the sub pixel area B2, the main pixel electrode 210 and the sub pixel electrode 220 are four domains, and the main pixel electrode 210 and the sub pixel electrode 220 form eight domains together; each pixel unit includes a first thin film transistor T1, a second thin film transistor T2, and a third thin film transistor T3, the first thin film transistor T1 is connected to the main pixel electrode 210 for charging the main pixel electrode 210 to control the luminance of the main pixel region B1, the second thin film transistor T2 and the third thin film transistor T3 are connected to the sub pixel electrode 220, wherein the second thin film transistor T2 is used for charging the sub pixel electrode 220, and the third thin film transistor T3 is used for leakage of current to the sub pixel electrode 220, and the luminance of the sub pixel region B2 is controlled by the cooperation of the second thin film transistor T2 and the third thin film transistor T3, so that the main pixel region B1 and the sub pixel region B2 have different luminances.
In the related art of the present application, each pixel unit includes a main pixel region B1 and a sub-pixel region B2, and each pixel unit has three thin film transistors (i.e., 3T architecture), the luminance of the main pixel region B1 is controlled by a first thin film transistor T1, and the luminance of the sub-pixel region B2 is controlled by a second thin film transistor T2 and a third thin film transistor T3. The second thin film transistor T2 leaks current through the third thin film transistor T3 while charging the sub-pixel electrode 220 to pull down the potential of the sub-pixel region B2, so that the luminance of the main pixel region B1 is different from the luminance of the sub-pixel region B2, for example, the luminance of the main pixel region B1 is greater than the luminance of the sub-pixel region B2, thereby expanding the viewing angle of the display panel. That is, the luminance of the sub-pixel region B2 is affected by the combined action of the second thin film transistor T2 and the third thin film transistor T3, and the more the leakage of the third thin film transistor T3, the lower the luminance of the sub-pixel region B2.
In the background art of the present application, three thin film transistors are used in one pixel unit, so that the main pixel region B1 and the sub pixel region B2 have different luminances, and the liquid crystal molecules in the main pixel region B1 and the sub pixel region B2 can also have a plurality of different orientations, respectively, so that each pixel unit forms the pixel structure 200 with different luminances and also has a plurality of different liquid crystal alignment regions in the respective different luminance regions, respectively, to improve the color shift phenomenon.
However, since the panel with high resolution and high refresh rate is becoming the mainstream product, the pixels of the same size panel become smaller and smaller with the increase of resolution, and the charging of the pixels is more difficult with higher frequency, and in combination with the design of the 3T _8Do main pixels in some embodiments of the present application, the optical transmittance (Tr%) and Contrast (CR) of the panel are not enough to meet the requirements of customers.
Therefore, by adopting the pixel structure 100 in one embodiment of the present application, the process difficulty is reduced and the production yield is improved on the premise of ensuring the improvement of color shift at a large viewing angle.
In one embodiment of the present application, by dividing each pixel unit of the pixel structure 100 into the main pixel region a1 and the sub pixel region a2, the alignment of the liquid crystal molecules of the main pixel region a1 and the sub pixel region a2 may be different to increase the viewing angle. By adopting a pixel unit including a first thin film transistor 130 and a second thin film transistor 140 (i.e. 2T architecture), the first thin film transistor 130 is connected to the main pixel electrode 110 for charging the main pixel electrode 110 to control the brightness of the main pixel region a1, the second thin film transistor 140 is connected to the sub pixel electrode 120 for charging the sub pixel electrode 120 to control the brightness of the sub pixel region a2, so that the main pixel region a1 and the sub pixel region a2 have different brightness, and the liquid crystal molecules in the main pixel region a1 and the sub pixel region a2 can also have a plurality of different orientations, respectively, so that each pixel unit forms a pixel structure 100 with different brightness and also a plurality of different liquid crystal alignment regions in the respective different brightness regions, thereby improving the color cast phenomenon.
The sum of the area of the main pixel electrode 110 and the area of the sub-pixel electrode 120 is greater than the area of the predetermined pixel electrode.
In addition, compared with the 3T architecture adopted in the background art known by the inventor of the present application, the 2T architecture adopted in one embodiment of the present application only needs to form two regions of the thin film transistor, which is equivalent to the third thin film transistor T3 being eliminated, thereby reducing the structural complexity of the pixel structure 100 and the manufacturing difficulty. In addition, the area of the third tft T3 that is eliminated may form a part of the main pixel electrode 110 or a part of the sub pixel electrode 120, so that the sum of the areas of the main pixel electrode 110 and the sub pixel electrode 120 is greater than the area of the predetermined pixel electrode, thereby increasing the aperture ratio, and improving the optical transmittance and contrast of the display panel on the premise of ensuring improvement of color shift. Meanwhile, the number of the thin film transistors in the pixel unit is reduced, so that the process difficulty is reduced, and the production yield is improved.
In addition, it should be noted that the area of the predetermined pixel electrode may be set according to actual process requirements, for example, the area of the predetermined pixel electrode may be the sum of the areas of the main pixel electrode 210 and the sub-pixel electrode 220 shown in fig. 2. It can be understood that the area of the pixel electrode is preset to be the area of the pixel electrode of the pixel unit adopting nT architecture in the pixel structure with the same specification, where n is greater than or equal to 3. The pixel structure with the same specification shows that at least the area of the pixel unit in the pixel structure is equal to the area of the pixel unit adopting the technical scheme of the application. In other embodiments, a partial region of the third tft T3 that is eliminated may form the main pixel electrode 110, and another partial region may form the sub pixel electrode 120.
The area of the main pixel electrode 110 is larger than the area of the preset main pixel electrode, and/or the area of the sub-pixel electrode 120 is larger than the area of the preset sub-pixel electrode.
It is understood that, when the pixel unit in the pixel structure 100 adopts the 2T architecture, the area of the third thin film transistor T3 may be used to form the main pixel electrode 110 or the sub-pixel electrode 120, or form other light-transmitting structures, as long as the improvement of the optical transmittance and contrast of the display panel can be achieved, and is not limited in particular. For example, as shown in fig. 1, in an embodiment of the present disclosure, the main pixel electrode 110 is formed in a region of the third thin film transistor T3, such that an area of the main pixel electrode 110 is larger than a predetermined area of the main pixel electrode, and on the premise of ensuring improvement of color shift, the optical transmittance and contrast of the display panel are improved. Meanwhile, the number of the thin film transistors in the pixel unit is reduced, so that the process difficulty is reduced, and the production yield is improved.
It should be noted that the area of the predetermined main pixel electrode can be set according to actual process requirements, for example, the area of the predetermined main pixel electrode can be the area of the main pixel electrode 210 shown in fig. 2. It can be understood that the area of the main pixel electrode is preset to be the area of the main pixel electrode 110 of the pixel unit adopting nT architecture in the pixel structure with the same specification, where n is greater than or equal to 3. The pixel structure with the same specification shows that at least the area of the pixel unit in the pixel structure is equal to the area of the pixel unit adopting the technical scheme of the application.
In addition, the present invention is applicable to the pixel structure 100 having eight domains and the number of domains equal to or greater than eight domains. Transistors with different charging capabilities can be used in other multi-domain pixel structures to drive corresponding pixel regions to realize multi-domain functions. Specifically, this can be achieved by controlling the width-to-length ratio (W/L) of the channel of the transistor.
The first thin film transistor 130 and the second thin film transistor 140 share a source/drain.
Referring to fig. 1, the first thin film transistor 130 includes a drain 131, a source 132, and a gate 133, and the second thin film transistor 140 includes a drain 141, a source 142, and a gate 143, and by using a mode that the first thin film transistor 130 and the second thin film transistor 140 share a source, that is, the first thin film transistor 130 and the second thin film transistor 140 have only one source 132/142, an area where the source 132/142 is disposed can be reduced, and optical transmittance and contrast of the display panel can be further improved.
It is understood that, in order to further improve the optical transmittance and contrast ratio of the display panel, a manner of sharing a drain electrode by the first thin film transistor 130 and the second thin film transistor 140 may be adopted, different from a manner of sharing a source electrode by the first thin film transistor 130 and the second thin film transistor 140. In addition, it should be noted that the first thin film transistor 130 and the second thin film transistor 140 cannot share the source and the drain at the same time.
Wherein the first thin film transistor 130 includes a first channel (i.e., a channel formed by the source 132 and the drain 131, not numbered in the figure), the second thin film transistor 140 includes a second channel (i.e., a channel formed by the source 142 and the drain 141, not numbered in the figure), and the aspect ratio of the first channel is greater than that of the second channel.
Specifically, as shown in fig. 1, the first thin film transistor 130 may include a first channel, the second thin film transistor 140 may include a second channel, and a width-to-length ratio of the first channel is greater than a width-to-length ratio of the second channel. Generally, a thin film transistor includes a source electrode 132/142, a drain electrode 131/141, and a gate electrode 133/143, and whether conduction is formed between the source electrode 132/142 and the drain electrode 131/141 is controlled by the gate electrode 133/143. When the source 132/142 and the drain 131/141 are turned on, a channel through which carriers (i.e., electrons or holes) can move freely between the source 132/142 and the drain 131/141 is a channel. The width-to-length ratio of the channel refers to the ratio of the width to the length of the channel. The width-to-length ratio (i.e., W/L) of the channel is directly related to the charging capability of the transistor corresponding to the channel, and the larger the width-to-length ratio is, the better the charging capability of the transistor is, and correspondingly, the brighter the pixel region corresponding to the transistor is. When the width-to-length ratio of the first channel of the first thin film transistor 130 is greater than the width-to-length ratio of the second channel of the second thin film transistor 140, correspondingly, the charging capability of the first thin film transistor 130 is greater than the charging capability of the second thin film transistor 140, so that the luminance of the main pixel area a1 corresponding to the first thin film transistor 130 is greater than the luminance of the sub pixel area a2 corresponding to the second thin film transistor 140, thereby improving the color shift phenomenon.
The length of the first channel is consistent with that of the second channel, the width of the first channel is larger than that of the second channel, or the width of the first channel is consistent with that of the second channel, and the length of the first channel is smaller than that of the second channel.
Specifically, as can be seen from the above, the width-to-length ratio of the first channel is greater than the width-to-length ratio of the second channel. The widths and lengths of the first channel and the second channel are not particularly limited as long as the aspect ratio of the first channel is larger than that of the second channel. For example, the length of the first channel is consistent with the length of the second channel, and the width of the first channel is greater than the width of the second channel, or the width of the first channel is consistent with the width of the second channel, and the length of the first channel is less than the length of the second channel, so that the width-to-length ratio of the first channel is greater than the width-to-length ratio of the second channel, and the luminance of the main pixel region a1 corresponding to the first thin film transistor 130 is greater than the luminance of the sub-pixel region a2 corresponding to the second thin film transistor 140, thereby improving the color shift phenomenon.
The first thin film transistor 130 is a U-shaped thin film transistor, and the second thin film transistor 140 is an I-shaped thin film transistor.
Referring to fig. 3 and 4, the first thin film transistor 130 and the second thin film transistor 140 in fig. 1 are respectively enlarged views. As shown in fig. 3, the first thin film transistor 130 is a U-shaped thin film transistor, wherein the diameter of the arc formed by the source and the drain in the first channel is B, the diameter of the arc in the gate is a, and the length of the first channel is B-a. According to the calculation formula, the width-length ratio of the first channel
As can be seen from fig. 4, the second thin film transistor 140 is an I-type thin film transistor, in which the width of the second channel is W, the length of the second channel is L, and the width-to-length ratio (W/L) of the second channel is W/L. Under the same drawing space, and the lengths of the first channel and the second channel are the same (i.e. L is the same), the channel width of the I-shaped second channel is smaller than that of the first channel, i.e. the width-to-length ratio of the U-shaped first channel is larger than that of the I-shaped second channel. When the first tft 130 is a U-shaped tft and the second tft 140 is an I-shaped tft, the charging capability of the first tft 130 is greater than that of the second tft 140, and accordingly, the luminance of the main pixel region a1 corresponding to the first tft 130 is greater than that of the sub pixel region a2 corresponding to the second tft 140. By using the firstThe tft 130 is a U-shaped tft, and the second tft 140 is an I-shaped tft, so that the luminance of the main pixel region a1 is greater than the luminance of the sub pixel region a2, thereby improving the color shift phenomenon.
Fig. 5 is a schematic structural diagram of a pixel structure 300 according to another embodiment of the present application. In another embodiment of the present application, the area of the sub-pixel electrode 320 is larger than the area of the predetermined sub-pixel electrode.
Specifically, as can be seen from the above, when the pixel unit in the pixel structure 300 adopts the 2T architecture, only the area where two tfts are required to be formed is eliminated, which is equivalent to the elimination of the third tft T3, thereby reducing the structural complexity of the pixel structure 300 and the manufacturing difficulty. In addition, the area of the third thin film transistor T3 that is eliminated may be used to form the main pixel electrode 310 or the sub pixel electrode 320, or other light-transmitting structures, without particular limitation. For example, as shown in fig. 5, in another embodiment of the present application, a sub-pixel region C2 is formed in a region of the third tft T3 that is eliminated, so that the area of the sub-pixel electrode 320 is larger than the area of the predetermined sub-pixel electrode, thereby improving the optical transmittance and contrast of the display panel to some extent.
It should be noted that the area of the predetermined sub-pixel electrode may be set according to actual process requirements, for example, the area of the predetermined sub-pixel electrode may be the area of the sub-pixel electrode 220 shown in fig. 2. It can be understood that the area of the sub-pixel electrode is preset as the area of the sub-pixel electrode of the pixel unit adopting nT architecture in the pixel structure with the same specification, where n is greater than or equal to 3. The pixel structure with the same specification shows that at least the area of the pixel unit in the pixel structure is equal to the area of the pixel unit adopting the technical scheme of the application.
Specifically, as shown in fig. 5, the pixel structure 300 includes: the pixel units are distributed in an array mode, each pixel unit comprises a main pixel area C1 and a sub pixel area C2, a main pixel electrode 310 is arranged in the main pixel area C1, and a sub pixel electrode 320 is arranged in the sub pixel area C2; each pixel unit comprises a first thin film transistor 330 and a second thin film transistor 340, wherein the first thin film transistor 330 is connected with the main pixel electrode 310 and used for charging the main pixel electrode 310, and the second thin film transistor 340 is connected with the sub-pixel electrode 320 and used for charging the sub-pixel electrode 320; the charging capability of the first thin film transistor 330 is greater than that of the second thin film transistor 340.
The area of the main pixel electrode 310 is smaller than that of the sub-pixel electrode 320.
In another embodiment of the present application, by using the first thin film transistor 330 and the second thin film transistor 340, and the charging capability of the first thin film transistor 330 is greater than that of the second thin film transistor 340, the number of thin film transistors in the pixel unit is reduced, thereby reducing the process difficulty and increasing the production yield. In addition, the area of the third tft T3 is eliminated to form the sub-pixel region C2, so that the area of the sub-pixel electrode 320 is larger than the area of the predetermined sub-pixel electrode, and the area of the main pixel electrode 310 is smaller than the area of the sub-pixel electrode 320, thereby improving the optical transmittance and contrast of the display panel to a certain extent on the premise of ensuring that the color shift under a large viewing angle is improved. Meanwhile, the process difficulty is reduced, and the production yield is improved.
In addition, as shown in fig. 5, in another embodiment of the present application, the first thin film transistor 330 may include a drain 331, a source 332, and a gate 333, and the second thin film transistor 340 includes a drain 341, a source 342, and a gate 343, and by using a manner that the first thin film transistor 330 and the second thin film transistor 340 share a source or a drain, that is, the first thin film transistor 330 and the second thin film transistor 340 only have one source 332/342, a region where the source 332/342 is disposed may be reduced, and the optical transmittance and the contrast of the display panel may be further improved. It should be understood that the conditions for further defining the structures in one embodiment of the present application can be applied to another embodiment of the present application to further improve the optical transmittance and contrast of the display panel, and reference may be specifically made to the description in one embodiment of the present application, which is not repeated herein.
Based on the pixel structure 100 provided in the above embodiment, an embodiment of the present application further provides an array substrate (not shown in the drawings), including: a substrate and a pixel electrode layer arranged in a stack, the pixel electrode layer comprising at least one pixel structure as described in any one of the above.
Based on the pixel structure provided in the foregoing embodiment, an embodiment of the present application further provides a display panel 400, as shown in fig. 6, including: the array substrate 410, the color filter substrate 420 disposed opposite to the array substrate 410, and the liquid crystal layer 430 located between the array substrate 410 and the color filter substrate 420 are as described above.
Among them, the display panel 400 includes a vertical alignment type, a twisted nematic type, or a super twisted nematic type.
Specifically, a Liquid Crystal Display (LCD) panel generally includes a color filter substrate 420 (i.e., a color filter substrate), an array substrate 410 (i.e., a thin film transistor array substrate), and a liquid crystal layer disposed between the two substrates, wherein pixel electrodes and common electrodes are respectively disposed on opposite inner sides of the two substrates, and the liquid crystal molecules are controlled by applying a voltage to change the direction, so as to refract light from a backlight module to generate a picture. The pixel structure of the embodiment of the invention can be applied to a Twisted Nematic (TN) mode, a Super Twisted Nematic (ST N) mode, a Vertical Alignment (VA) mode, and the like, and improves the optical transmittance and contrast of the display panel 400 on the premise of ensuring improvement of color shift at a large viewing angle, and at the same time, reduces the process difficulty and improves the production yield.
Among them, the VA mode is a common display mode having advantages of high contrast, wide viewing angle, and the like. However, since the VA mode employs vertically rotating liquid crystal, the difference of birefringence of liquid crystal molecules is large, which causes a problem of color shift (color shift) under a large viewing angle to be serious. The pixel structure of the embodiment of the application is applied to the display panel 400 of the VA mode, so that the process difficulty is reduced and the production yield is improved on the premise of ensuring and improving the color cast under a large visual angle.
As can be seen from the above, the present invention provides a pixel structure, an array substrate and a display panel, wherein the pixel structure includes: the pixel units are distributed in an array mode, each pixel unit at least comprises a main pixel area and a sub-pixel area, the main pixel area is provided with a main pixel electrode, and the sub-pixel area is provided with a sub-pixel electrode; each pixel unit at least comprises a first thin film transistor and a second thin film transistor, wherein the first thin film transistor is connected with the main pixel electrode and used for charging the main pixel electrode, and the second thin film transistor is connected with the sub-pixel electrode and used for charging the sub-pixel electrode; the charging capacity of the first thin film transistor is larger than that of the second thin film transistor. By adopting the pixel structure, the process difficulty is reduced and the production yield is improved on the premise of ensuring the improvement of color cast under a large visual angle.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A pixel structure, comprising:
the pixel units are distributed in an array mode, each pixel unit at least comprises a main pixel area and a sub-pixel area, the main pixel area is provided with a main pixel electrode, and the sub-pixel area is provided with a sub-pixel electrode;
each pixel unit at least comprises a first thin film transistor and a second thin film transistor, wherein the first thin film transistor is connected with the main pixel electrode and used for charging the main pixel electrode, and the second thin film transistor is connected with the secondary pixel electrode and used for charging the secondary pixel electrode;
wherein the charging capability of the first thin film transistor is greater than the charging capability of the second thin film transistor.
2. The pixel structure according to claim 1, wherein a sum of an area of the main pixel electrode and an area of the sub pixel electrode is larger than an area of a predetermined pixel electrode.
3. The pixel structure of claim 1, wherein the first thin film transistor comprises a first channel and the second thin film transistor comprises a second channel, and wherein a width-to-length ratio of the first channel is greater than a width-to-length ratio of the second channel.
4. The pixel structure of claim 3, wherein the length of the first channel is the same as the length of the second channel, and the width of the first channel is greater than the width of the second channel, or the width of the first channel is the same as the width of the second channel, and the length of the first channel is less than the length of the second channel.
5. The pixel structure of claim 1, wherein the first thin film transistor is a U-type thin film transistor and the second thin film transistor is an I-type thin film transistor.
6. The pixel structure according to claim 1, wherein the area of the main pixel electrode is larger than a predetermined area of the main pixel electrode, and/or the area of the sub-pixel electrode is larger than a predetermined area of the sub-pixel electrode.
7. The pixel structure of claim 1, wherein the area of the sub-pixel electrode is greater than the area of the main pixel electrode.
8. The pixel structure of claim 1, wherein said first thin film transistor and said second thin film transistor share a source/drain.
9. An array substrate, comprising: a substrate and a pixel electrode layer arranged in layers, the pixel electrode layer comprising at least one pixel structure according to any one of claims 1 to 8.
10. A display panel, comprising: the array substrate of claim 8, a color filter substrate disposed opposite the array substrate, and a liquid crystal layer disposed between the array substrate and the color filter substrate.
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| CN211293540U (en) * | 2019-06-11 | 2020-08-18 | 惠科股份有限公司 | Display panel and display device |
| CN112068376A (en) * | 2020-09-28 | 2020-12-11 | 成都中电熊猫显示科技有限公司 | Array substrate and display device |
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Application publication date: 20220415 |