CN114355470A - Anti-interference active infrared induction circuit - Google Patents
Anti-interference active infrared induction circuit Download PDFInfo
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- CN114355470A CN114355470A CN202111573019.1A CN202111573019A CN114355470A CN 114355470 A CN114355470 A CN 114355470A CN 202111573019 A CN202111573019 A CN 202111573019A CN 114355470 A CN114355470 A CN 114355470A
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Abstract
The invention provides an anti-interference active infrared sensing circuit, which comprises: the infrared photoelectric detector comprises a main control chip, infrared geminate transistors and a switching tube; the emitting end of the infrared geminate transistor and the switch tube are connected in series between the anode and the cathode of the power supply; the main control chip outputs a control signal with the frequency of F1 to the switching tube to control the switching tube to be conducted with the fixed frequency of F1, so that the transmitting end of the infrared pair tube transmits an infrared transmitting signal with a carrier wave with the fixed frequency of F1; the receiving end of the infrared pair transistor is connected with the input end of the main control chip and used for sending the received infrared reflection signal to the main control chip; the main control chip reads the carrier frequency and amplitude on the infrared reflection signal; when the carrier frequency of the infrared reflection signal is consistent with that of the infrared emission signal, judging that an object is shielded; when the amplitude of the infrared reflection signal is gradually increased, the object is judged to be gradually close; and when the amplitude of the infrared reflection signal is gradually reduced, judging that the object is gradually far away.
Description
Technical Field
The invention relates to an induction circuit, in particular to an infrared induction circuit.
Background
In the traditional active infrared induction, an emitting tube is controlled to emit an infrared pulse signal, the frequency is generally fixed to be 38KHz, and a receiving tube is controlled to output a low-level pulse signal according to the reflected 38KHz infrared pulse signal; the control singlechip detects whether a low level signal exists or not to judge whether a moving object is detected or not. This method can ensure reliability only by increasing the number of detection levels in order to avoid environmental interference, but it causes insensitivity to sensing, and makes it difficult to trade off between reliability and sensitivity. This requires a high level of infrared receiver tubes and infrared emitter tubes and is costly.
Disclosure of Invention
The invention aims to solve the main technical problem of providing an anti-interference active infrared sensing circuit which has strong anti-interference capability and can identify whether an object is far away or close to the object.
In order to solve the above technical problem, the present invention provides an anti-interference active infrared sensing circuit, including: the infrared photoelectric detector comprises a main control chip, infrared geminate transistors and a switching tube;
the transmitting end of the infrared geminate transistor and the switch tube are connected in series between the anode and the cathode of the power supply; the main control chip outputs a control signal with the frequency of F1 to the switching tube to control the switching tube to be conducted at the fixed frequency of F1, so that the transmitting end of the infrared pair tube transmits an infrared transmitting signal with a carrier wave at the fixed frequency of F1;
the receiving end of the infrared pair transistor is connected with the input end of the main control chip and used for sending the received infrared reflection signal to the main control chip;
the main control chip reads the carrier frequency and amplitude on the infrared reflection signal; when the carrier frequency of the infrared reflection signal is consistent with that of the infrared emission signal, judging that an object is shielded; when the amplitude of the infrared reflection signal is gradually increased, the object is judged to be gradually close; and when the amplitude of the infrared reflection signal is gradually reduced, judging that the object is gradually far away.
In a preferred embodiment: the switch tube is an MOS tube, the grid electrode of the switch tube is connected to the control signal output end of the main control chip, the source electrode of the switch tube is connected to the negative electrode, the drain electrode of the switch tube is connected to the cathode of the emission end of the infrared pair tube, and the anode of the emission end of the infrared pair tube is connected to the positive electrode.
In a preferred embodiment: the main control chip is further connected to a PWM signal, and the PWM signal and the control signal are overlapped to form a carrier signal which is sent to the switch tube.
In a preferred embodiment: the direct current blocking amplification circuit is connected between the transmitting end of the infrared pair transistor and the input end of the main control chip.
In a preferred embodiment: the blocking amplifying circuit comprises resistors R14, R15, R16 and R17, a capacitor C6 and a triode Q2;
the base electrode of the triode Q2 is connected to the emitting end of the infrared geminate transistor through a capacitor C6, the emitter electrode is connected to the negative electrode, and the collector electrode is connected to the positive electrode through a resistor R17; the resistor R16 is connected between the positive electrode and the base electrode of the triode Q2, and the resistor R14 is connected between the negative electrode and the base electrode of the triode Q2; the resistor R15 is connected between the emission end of the infrared pair tube and the negative electrode.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
the invention provides an anti-interference active infrared sensing circuit, which is characterized in that a carrier signal with a PWM signal of a certain frequency is output by a main control chip to control a switching tube to be conducted intermittently, so that an infrared emission signal sent by an emission end of an infrared geminate transistor is also the carrier signal. Therefore, the main control chip only needs to read the carrier wave on the infrared reflection signal of the infrared geminate transistor receiving end, compares the carrier wave with the carrier wave of the infrared emission signal, and judges that an object blocks if the carrier wave is consistent with the carrier wave of the infrared emission signal, so that the induction function is realized. The function does not need to transmit 38Khz infrared signals, and the anti-jamming capability is strong. Meanwhile, the main control chip reads the amplitude of the infrared reflection signal, so that whether the amplitude of the infrared reflection signal is gradually increased or decreased can be seen, and whether the shielding object is in a gradually approaching state or a gradually far state is judged.
Drawings
FIG. 1 is a circuit diagram of a preferred embodiment of the present invention;
FIG. 2 is a signal modulation diagram of a preferred embodiment of the present invention;
fig. 3 is a signal demodulation diagram of the preferred embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention; it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and all other embodiments obtained by those skilled in the art without any inventive work are within the scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "top/bottom", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "sleeved/connected," "connected," and the like, are used in a broad sense, and for example, "connected" may be a wall-mounted connection, a detachable connection, an integral connection, a mechanical connection, an electrical connection, a direct connection, an indirect connection through an intermediate medium, and a communication between two elements, and those skilled in the art will understand the specific meaning of the terms in the present invention specifically.
Referring to fig. 1-3, the present embodiment provides an anti-interference active infrared sensing circuit, including: the infrared photoelectric detector comprises a main control chip, infrared geminate transistors and a switching tube;
the transmitting end of the infrared geminate transistor and the switch tube are connected in series between the anode and the cathode of the power supply; the main control chip outputs a control signal with the frequency of F1 to the switching tube to control the switching tube to be conducted at the fixed frequency of F1, so that the transmitting end of the infrared pair tube transmits an infrared transmitting signal with a carrier wave at the fixed frequency of F1;
the receiving end of the infrared pair transistor is connected with the input end of the main control chip and used for sending the received infrared reflection signal to the main control chip;
the main control chip reads the carrier frequency and amplitude on the infrared reflection signal; when the carrier frequency of the infrared reflection signal is consistent with that of the infrared emission signal, judging that an object is shielded; when the amplitude of the infrared reflection signal is gradually increased, the object is judged to be gradually close; and when the amplitude of the infrared reflection signal is gradually reduced, judging that the object is gradually far away.
According to the anti-interference active infrared sensing circuit, the carrier signal with the PWM signal and a certain frequency is output through the main control chip, the switching tube is controlled to be conducted intermittently, and therefore the infrared emission signal sent by the emission end of the infrared pair tube is also the carrier signal. Therefore, the main control chip only needs to read the carrier wave on the infrared reflection signal of the infrared geminate transistor receiving end, compares the carrier wave with the carrier wave of the infrared emission signal, and judges that an object blocks if the carrier wave is consistent with the carrier wave of the infrared emission signal, so that the induction function is realized. The function does not need to transmit 38Khz infrared signals, and the anti-jamming capability is strong. Meanwhile, the main control chip reads the amplitude of the infrared reflection signal, so that whether the amplitude of the infrared reflection signal is gradually increased or decreased can be seen, and whether the shielding object is in a gradually approaching state or a gradually far state is judged.
In order to realize the above circuit function, the switching tube is an MOS tube Q1, a gate of the switching tube is connected to the control signal output end of the main control chip, a source of the switching tube is connected to the negative electrode, a drain of the switching tube is connected to a cathode of the infrared pair tube emission end, and an anode of the infrared pair tube emission end is connected to the positive electrode.
In order to realize modulation of the carrier signal, the main control chip is further connected to a PWM signal, and the PWM signal and the control signal are superposed to form the carrier signal which is sent to the switch tube. As shown in fig. 2. When the infrared reflection signal is transmitted to the signal input end of the main control chip through the transmitting end of the infrared geminate transistor, the main control chip demodulates the infrared reflection signal to obtain decoding information on the infrared reflection signal. As shown in fig. 3. The main control chip further compares the modulation information with the decoding information, and when the decoding information is consistent with the modulation information, the main control chip judges that an object is shielded; during decoding, signal amplitude values are detected simultaneously, and the amplitude values are the distance of an object; and the amplitude changes from small to large, and the object is judged to approach again, otherwise, the object is far away.
In this embodiment, the infrared photoelectric conversion device further includes a blocking amplifier circuit connected between the emitting end of the infrared pair transistor and the input end of the main control chip. Specifically, the blocking amplifying circuit comprises resistors R14, R15, R16 and R17, a capacitor C6 and a triode Q2;
the base electrode of the triode Q2 is connected to the emitting end of the infrared geminate transistor through a capacitor C6, the emitter electrode is connected to the negative electrode, and the collector electrode is connected to the positive electrode through a resistor R17; the resistor R16 is connected between the positive electrode and the base electrode of the triode Q2, and the resistor R14 is connected between the negative electrode and the base electrode of the triode Q2; the resistor R15 is connected between the emission end of the infrared pair tube and the negative electrode.
The above description is only a preferred embodiment of the present invention, but the design concept of the present invention is not limited thereto, and any person skilled in the art can make insubstantial changes in the technical scope of the present invention within the technical scope of the present invention, and the actions infringe the protection scope of the present invention are included in the present invention.
Claims (5)
1. An anti-interference active infrared sensing circuit, characterized by comprising: the infrared photoelectric detector comprises a main control chip, infrared geminate transistors and a switching tube;
the transmitting end of the infrared geminate transistor and the switch tube are connected in series between the anode and the cathode of the power supply; the main control chip outputs a control signal with the frequency of F1 to the switching tube to control the switching tube to be conducted at the fixed frequency of F1, so that the transmitting end of the infrared pair tube transmits an infrared transmitting signal with a carrier wave at the fixed frequency of F1;
the receiving end of the infrared pair transistor is connected with the input end of the main control chip and used for sending the received infrared reflection signal to the main control chip;
the main control chip reads the carrier frequency and amplitude on the infrared reflection signal; when the carrier frequency of the infrared reflection signal is consistent with that of the infrared emission signal, judging that an object is shielded; when the amplitude of the infrared reflection signal is gradually increased, the object is judged to be gradually close; and when the amplitude of the infrared reflection signal is gradually reduced, judging that the object is gradually far away.
2. An active anti-jamming infrared sensing circuit according to claim 1, characterized in that: the switch tube is an MOS tube, the grid electrode of the switch tube is connected to the control signal output end of the main control chip, the source electrode of the switch tube is connected to the negative electrode, the drain electrode of the switch tube is connected to the cathode of the emission end of the infrared pair tube, and the anode of the emission end of the infrared pair tube is connected to the positive electrode.
3. An active anti-jamming infrared sensing circuit according to claim 1, characterized in that: the main control chip is further connected to a PWM signal, and the PWM signal and the control signal are overlapped to form a carrier signal which is sent to the switch tube.
4. An active anti-jamming infrared sensing circuit according to claim 1, characterized in that: the direct current blocking amplification circuit is connected between the transmitting end of the infrared pair transistor and the input end of the main control chip.
5. An active anti-jamming infrared sensing circuit according to claim 4, characterized in that: the blocking amplifying circuit comprises resistors R14, R15, R16 and R17, a capacitor C6 and a triode Q2;
the base electrode of the triode Q2 is connected to the emitting end of the infrared geminate transistor through a capacitor C6, the emitter electrode is connected to the negative electrode, and the collector electrode is connected to the positive electrode through a resistor R17; the resistor R16 is connected between the positive electrode and the base electrode of the triode Q2, and the resistor R14 is connected between the negative electrode and the base electrode of the triode Q2; the resistor R15 is connected between the emission end of the infrared pair tube and the negative electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202111573019.1A CN114355470A (en) | 2021-12-21 | 2021-12-21 | Anti-interference active infrared induction circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111573019.1A CN114355470A (en) | 2021-12-21 | 2021-12-21 | Anti-interference active infrared induction circuit |
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| CN114355470A true CN114355470A (en) | 2022-04-15 |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201059997Y (en) * | 2007-06-05 | 2008-05-14 | 深圳市和而泰电子科技有限公司 | Human body infrared detection control circuit |
| CN202798730U (en) * | 2012-06-27 | 2013-03-13 | 郑州华力信息技术有限公司 | 38KHz modulation infrared transmitting and receiving device |
| CN103699005A (en) * | 2013-12-26 | 2014-04-02 | 河南东骏智能科技有限公司 | Infrared gesture switch controller |
| CN206370153U (en) * | 2017-01-10 | 2017-08-01 | 北京维冠机电股份有限公司 | It is a kind of based on UART mouthfuls of infrared communications set |
| CN110456913A (en) * | 2019-08-21 | 2019-11-15 | 华帝股份有限公司 | Infrared gesture action recognition method and device |
| CN211830740U (en) * | 2020-05-12 | 2020-10-30 | 厦门阳光恩耐照明有限公司 | Touch device |
| CN113109836A (en) * | 2020-09-28 | 2021-07-13 | 黄海容 | Multi-direction barrier detection device |
-
2021
- 2021-12-21 CN CN202111573019.1A patent/CN114355470A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201059997Y (en) * | 2007-06-05 | 2008-05-14 | 深圳市和而泰电子科技有限公司 | Human body infrared detection control circuit |
| CN202798730U (en) * | 2012-06-27 | 2013-03-13 | 郑州华力信息技术有限公司 | 38KHz modulation infrared transmitting and receiving device |
| CN103699005A (en) * | 2013-12-26 | 2014-04-02 | 河南东骏智能科技有限公司 | Infrared gesture switch controller |
| CN206370153U (en) * | 2017-01-10 | 2017-08-01 | 北京维冠机电股份有限公司 | It is a kind of based on UART mouthfuls of infrared communications set |
| CN110456913A (en) * | 2019-08-21 | 2019-11-15 | 华帝股份有限公司 | Infrared gesture action recognition method and device |
| CN211830740U (en) * | 2020-05-12 | 2020-10-30 | 厦门阳光恩耐照明有限公司 | Touch device |
| CN113109836A (en) * | 2020-09-28 | 2021-07-13 | 黄海容 | Multi-direction barrier detection device |
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