CN114335263B - LED device, manufacturing method thereof and display device - Google Patents
LED device, manufacturing method thereof and display device Download PDFInfo
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- CN114335263B CN114335263B CN202111648966.2A CN202111648966A CN114335263B CN 114335263 B CN114335263 B CN 114335263B CN 202111648966 A CN202111648966 A CN 202111648966A CN 114335263 B CN114335263 B CN 114335263B
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Abstract
The disclosure provides a preparation method of an LED device, the LED device and a display device. The preparation method of the LED device comprises the following steps: providing a plurality of LED chips on a circuit substrate, wherein the plurality of LED chips comprise a substrate; a quarter wave plate is arranged on one side of the substrate far away from the circuit base plate; a polarizing layer is arranged on one side of the quarter wave plate, which is far away from the substrate; and arranging an encapsulation layer on one side of the polarizing layer, which is far away from the quarter wave plate, so as to form the LED device. According to the preparation method of the LED device and the LED device, the reflection of the LED device on the ambient light is effectively reduced by combining the quarter wave plate and the polarizing layer, so that the influence of the ambient light on the light emission of the LED device is reduced, and the contrast of the ambient light of the LED device is improved.
Description
Technical Field
The disclosure relates to the technical field of LEDs, and in particular relates to a preparation method of an LED device, an LED device and a display device.
Background
In recent years, micro Light-Emitting diodes (Micro-LEDs) have attracted great attention in many fields, and have excellent performances such as self-luminescence, high brightness, high efficiency, low power consumption, long life, and wide operating environments. Micro-LEDs are a new generation of display technology, and have a wide application field, including many advanced display applications, such as wearable displays including head-mounted displays (HMDs), head-up displays (HUDs), smart watches, AR/VR glasses, etc., where the smart watches and AR/VR have outdoor scenes, which require high ambient light contrast, high reliability, and low power consumption.
Among them, ambient light contrast (ACR), i.e., contrast under ambient light illumination, is one of the important reference indicators for evaluating the performance of self-luminous displays. However, existing LED displays have a low contrast and are greatly affected by ambient light.
Disclosure of Invention
In order to solve at least one of the technical problems mentioned in the background art, the scheme of the disclosure provides a preparation method of an LED device, the LED device and a display device.
According to an aspect of the embodiments of the present disclosure, there is provided a method for manufacturing an LED device, wherein the method includes: providing a plurality of LED chips on a circuit substrate, wherein the plurality of LED chips comprise a substrate; a quarter wave plate is arranged on one side of the substrate far away from the circuit base plate; a polarizing layer is arranged on one side of the quarter wave plate, which is far away from the substrate; and arranging an encapsulation layer on one side of the polarizing layer, which is far away from the quarter wave plate, so as to form the LED device. According to the embodiment of the disclosure, the quarter wave plate and the polarizing layer are arranged on the light emitting surface of the LED chip, so that the proportion of incident ambient light emitted from the LED device after the ambient light is turned back is reduced, the influence of the ambient light on the light emitting of the LED device is effectively reduced, and the ambient light contrast of the LED device is improved.
Optionally, disposing a quarter wave plate on a side of the substrate remote from the circuit substrate includes: setting a dichroism dye on one side of the substrate far away from the circuit substrate; optically inducing the dichromatic dye to have a certain orientation; and arranging a liquid crystal material on one side of the dichroism dye away from the substrate to obtain the quarter-wave plate. Wherein the dichroic dye comprises: the azo dye is preferably any one of a cymbidium dye, an azo dye, a leek dye, a polycyclic dye and the like. One embodiment of the present disclosure obtains a quarter wave plate by orienting a dichroic dye to orient a liquid crystal material disposed thereon.
Optionally, disposing a quarter wave plate on a side of the substrate remote from the circuit substrate includes: processing one side of the substrate far away from the LED chip to form a texture structure with a certain orientation on the surface of the substrate; and arranging a liquid crystal material on the side of the substrate with the texture structure to obtain the quarter wave plate. Another embodiment of the present disclosure obtains a quarter wave plate by processing a substrate to form a textured structure having an orientation on a surface thereof, thereby defining an orientation of a liquid crystal material disposed thereon.
Optionally, disposing a quarter wave plate on a side of the substrate remote from the circuit substrate includes: and setting a birefringent crystal material on one side of the substrate far from the circuit substrate to obtain the quarter wave plate. Wherein the birefringent crystal comprises: yttrium vanadate (YVO 4), lithium niobate (LiNbO 3), icelandite (ICELAND SPAR), and alpha-barium metaborate (a-BBO).
Optionally, before the quarter wave plate is disposed on a side of the substrate away from the circuit substrate, the method further comprises: grinding and thinning one side of the substrate far away from the circuit substrate; and polishing the thinned substrate so as to arrange the quarter wave plate on the polished substrate. And grinding the substrate to thin the substrate, and polishing to smooth the surface of the substrate to obtain the transparent substrate.
Optionally, disposing a polarizing layer on a side of the quarter wave plate away from the substrate includes: a dichroic dye is arranged on one side of the quarter wave plate away from the substrate; the dichroic dye is optically induced to have an orientation to obtain the polarizing layer.
Optionally, disposing a polarizing layer on a side of the quarter wave plate away from the substrate includes: arranging a transparent substrate with a polarizing film and one side of the quarter wave plate far away from the substrate in an opposite way so as to obtain the polarizing layer; wherein the polarizing film is positioned between the transparent substrate and the quarter wave plate. The transparent substrate comprises any one of polyimide film, glass, quartz and sapphire sheet.
Optionally, the transparent substrate further comprises a sacrificial layer, and the sacrificial layer is located between the transparent substrate and the polarizing film.
Optionally, after disposing the transparent substrate with the polarizing film opposite to the side of the quarter-wave plate away from the substrate, disposing a polarizing layer on the side of the quarter-wave plate away from the substrate further includes: and stripping the transparent substrate.
Optionally, an included angle between the optical axis direction of the quarter wave plate and the polarization direction of the polarizing layer is 45 °. Under the angle, the ambient light incident on the LED device sequentially passes through the quarter wave plate and the polarizing layer after being turned back, so that extinction phenomenon occurs, the reflection of the LED device on the ambient light is effectively inhibited, and the influence of the ambient light on the light emission of the LED device is reduced.
Optionally, disposing an encapsulation layer on a side of the polarizing layer away from the quarter-wave plate includes: and coating an antireflection material on one side of the polarizing layer far away from the quarter wave plate to form the packaging layer. According to the embodiment of the disclosure, the anti-reflection material is adopted as the packaging layer, so that not only can the LED chip be protected, but also the reflection of the LED device on ambient light can be reduced, and the ambient light contrast of the LED device is improved.
Optionally, the anti-reflection material encapsulates the LED device. The LED device is coated by the anti-reflection material, so that the reflection of the side surface of the LED device to the ambient light can be effectively reduced, and the contrast ratio of the ambient light of the LED device is further improved.
Optionally, the anti-reflection material comprises a matte powder.
Optionally, the method further comprises: disposing a plurality of LED chips on the substrate; the LED chip comprises a P electrode, wherein the P electrode comprises a metal area and at least one metal wire, and the metal area is electrically connected with the metal wire. The embodiment of the disclosure adopts the specially designed P electrode, so that the overlooking projection area of the P electrode is reduced while the current conductivity is ensured, thereby reducing the reflection of the P electrode to the ambient light and improving the ambient light contrast of the LED device.
Optionally, disposing a plurality of LED chips on the substrate includes: providing a plurality of mesas on the substrate; a current diffusion layer is arranged on the table top; and arranging the P electrode on the current diffusion layer to obtain the LED chips. The arrangement of the current diffusion layer is beneficial to improving the current uniformity, thereby improving the photoelectric performance of the LED device.
Optionally, after disposing a plurality of mesas on the substrate, disposing a plurality of LED chips on the substrate further includes: and carrying out alkaline treatment on the side walls of the plurality of table tops. The alkaline treatment is beneficial to enabling the side wall of the table top to be vertical as much as possible and avoiding reflection of the side wall of the table top to light, so that the influence of ambient light on the LED device can be reduced, and the light emitting efficiency of the LED chip can be improved.
Optionally, after disposing a current spreading layer on the mesa, disposing a plurality of LED chips on the substrate further includes: and carrying out double annealing treatment on the current diffusion layer. The double annealing of the current diffusion layer is beneficial to improving the transparency of the current diffusion layer and/or improving the conductivity of the current diffusion layer, and meanwhile, the ohmic contact between the current diffusion layer and the semiconductor layer can be realized.
Optionally, the current diffusion layer comprises a nickel/gold bi-layer metal layer or an indium tin oxide layer; the double annealing treatment includes: under the condition that the current diffusion layer comprises a nickel/gold double-layer metal layer, placing the nickel/gold double-layer metal layer in an N 2 gas environment at a first preset temperature for processing a first preset time, then placing the nickel/gold double-layer metal layer in an N 2 and O 2 mixed gas environment at a second preset temperature for processing a second preset time, and finally performing rapid cooling; in the case where the current spreading layer comprises indium tin oxide, the third preset time is treated in an O 2 gas atmosphere at a third preset temperature and then the fourth preset time is treated in an N 2 gas atmosphere at a fourth preset temperature. It can be understood that the first/second/third/fourth preset temperatures/times may be set according to actual needs, and may be the same or different; the "first/second/third/fourth" is merely a distinction of similar parameters of different processes/process objects, and is not a limitation of the order thereof or actual parameter values.
Optionally, disposing a plurality of LED chips on the substrate further includes: a passivation layer is arranged on the P electrode; arranging an electrode contact hole on the passivation layer to expose part of the metal region; and arranging a bonding layer in the electrode contact hole.
Optionally, before the encapsulation layer is disposed on a side of the polarizing layer away from the quarter-wave plate, the method further includes: surrounding dam glue is arranged around the LED chips; and filling a shading material in the area limited by the dam glue. According to the embodiment of the disclosure, the dam glue is arranged around the LED chip, so that the LED chip can be protected, and the light shielding material can be filled in the area limited by the dam glue, namely between the LED chip and the circuit substrate, so that the reflection of the LED chip on the ambient light is further reduced, and the ambient light contrast of the LED device is improved.
According to another aspect of the embodiments of the present disclosure, there is also provided an LED device. The LED device comprises a circuit substrate, a plurality of LED chips, a quarter wave plate, a polarizing layer and a packaging layer, wherein the LED chips are arranged on the circuit substrate, the LED chips comprise a substrate, the substrate is arranged on one side of the LED chips away from the circuit substrate, the quarter wave plate is arranged on one side of the substrate away from the LED chips, the polarizing layer is arranged on one side of the quarter wave plate away from the substrate, and the packaging layer is arranged on one side of the polarizing layer away from the quarter wave plate.
Optionally, an included angle between the optical axis direction of the quarter wave plate and the polarization direction of the polarizing layer is 45 °.
Optionally, the quarter wave plate comprises a dichroic dye and a liquid crystal material, the dichroic dye and the liquid crystal material having the same orientation. Wherein the dichroic dye comprises: the azo dye is preferably any one of a cymbidium dye, an azo dye, a leek dye, a polycyclic dye and the like.
Optionally, the surface of the substrate adjacent to the quarter wave plate has an oriented texture; the quarter wave plate comprises a liquid crystal material having the same orientation as the texture.
Optionally, the quarter wave plate comprises a birefringent crystalline material. Wherein the birefringent crystal comprises any one of yttrium vanadate (YVO 4), lithium niobate (LiNbO 3), icentite (ICELAND SPAR) and alpha-barium metaborate (a-BBO).
Optionally, the polarizing layer includes a dichroic dye.
Optionally, the polarizing layer further includes a transparent substrate, and the transparent substrate is disposed on a side of the dichroic dye away from the quarter-wave plate. The transparent substrate can be any one of polyimide film, glass, quartz and sapphire sheet.
Optionally, the encapsulation layer includes an anti-reflection material.
Optionally, the anti-reflection material comprises a matte powder.
Optionally, the LED device further includes a dam glue, where the dam glue is disposed around the plurality of LED chips. Wherein, the DAM glue can be DAM glue, milky white or white non-light absorbing thermosetting material.
Optionally, the LED device further includes a light shielding material disposed between the plurality of LED chips and the circuit substrate. Wherein, the shading material can be high-fluidity anti-reflection adhesive.
Optionally, the LED chip further includes a current diffusion layer and a P electrode, where the P electrode is disposed on a side of the current diffusion layer away from the substrate, and the P electrode includes a metal region and at least one metal wire, and the metal region is electrically connected with the metal wire.
Optionally, the LED device is prepared by adopting the preparation method of the LED device.
According to still another aspect of the embodiments of the present disclosure, there is also provided a display device. The display device comprises the LED device.
According to the preparation method of the LED device and the LED device, the reflection of the LED device on the ambient light is effectively reduced by combining the quarter wave plate and the polarizing layer, so that the influence of the ambient light on the light emission of the LED device is reduced, and the contrast of the ambient light of the LED device is improved.
In addition, the technical scheme of the present disclosure not only is beneficial to protecting the LED device, but also can effectively reduce the reflection of the LED device to the ambient light by arranging the anti-reflection material on the outermost layer of the LED device, in addition, the anti-reflection material is used as the packaging layer, thereby simplifying the preparation process and reducing the cost. Further, according to the technical scheme, the shading material is arranged between the LED chip and the circuit substrate, so that the reflection of the LED device on the ambient light is further reduced, and the contrast of the ambient light of the LED device is further improved.
Drawings
The above, as well as additional purposes, features, and advantages of exemplary embodiments of the present disclosure will become readily apparent from the following detailed description when read in conjunction with the accompanying drawings. Several embodiments of the present disclosure are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which like reference numerals refer to similar or corresponding parts and in which:
Fig. 1 is a flowchart illustrating a method of manufacturing an LED device according to one embodiment of the present disclosure;
fig. 2 is a schematic diagram illustrating a top view structure of an alternative LED chip according to an embodiment of the present disclosure;
Fig. 3 is a schematic diagram illustrating a cross-sectional structure of an LED device according to one embodiment of the present disclosure.
Detailed Description
It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other. The present disclosure will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
It should be noted that the following detailed description is illustrative and is intended to provide further explanation of the application. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.
Spatially relative terms, such as "above … …," "above … …," "upper surface on … …," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial location relative to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "above" or "over" other devices or structures would then be oriented "below" or "beneath" the other devices or structures. Thus, the exemplary term "above … …" may include both orientations "above … …" and "below … …". The device may also be oriented 90 degrees or at other orientations and the spatially relative descriptors used herein interpreted accordingly.
Exemplary embodiments according to the present disclosure will now be described in more detail with reference to the accompanying drawings. These exemplary embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. It should be appreciated that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of these exemplary embodiments to those skilled in the art, that in the drawings, thicknesses of layers and regions are exaggerated for clarity, and identical reference numerals are used to denote identical devices, and thus descriptions thereof will be omitted.
The disclosure provides a method for manufacturing an LED device. Referring to fig. 1, fig. 1 is a flowchart illustrating a method of manufacturing an LED device according to one embodiment of the present disclosure. As shown in fig. 1, the preparation method of the LED device includes the following steps S101 to S104:
step S101: arranging a plurality of LED chips on a circuit substrate, wherein the LED chips comprise a substrate;
Step S102: a quarter wave plate is arranged on one side of the substrate far away from the circuit base plate;
Step S103: a polarizing layer is arranged on one side of the quarter wave plate, which is far away from the substrate;
Step S104: and arranging an encapsulation layer on one side of the polarizing layer, which is far away from the quarter wave plate, so as to obtain the LED device.
According to the preparation method of the LED device, the reflection of the LED device on the ambient light is effectively reduced by combining the quarter wave plate and the polarizing layer, so that the influence of the ambient light on the light emission of the LED device is reduced, and the ambient light contrast of the LED device is improved.
In step S101, a plurality of LED chips including a substrate may be disposed on a circuit substrate.
According to embodiments of the present disclosure, a plurality of LED chips are disposed on a circuit substrate, and any suitable method in the art may be employed, for example, including but not limited to: arranging a circuit on a circuit substrate, arranging solder on a plurality of preset positions of the circuit by vapor deposition or any other applicable method, and welding an LED chip by the solder to electrically connect the LED chip with the circuit substrate; or directly bonding the LED chip with a bonding area on the circuit substrate to realize the electric connection between the LED chip and the circuit substrate; or a bonding layer is arranged on the LED chip so as to bond the LED chip and the circuit substrate through the bonding layer.
The LED chip may be made of any suitable semiconductor material, and the group III-v semiconductor material is preferred in the embodiments of the present disclosure, and may be gallium nitride (GaN) based material, or indium gallium phosphide (InGaP) based material, or aluminum gallium indium phosphide (AlGaInP) based material, and the like, and the GaN based material emitting blue light is preferred in the embodiments of the present disclosure; the substrate may be selected to be a substrate material compatible with the semiconductor material, for example, when the semiconductor material is selected to be a GaN-based material, the substrate may be selected to be a sapphire substrate or a silicon substrate, with the sapphire substrate being preferred by embodiments of the present disclosure. The LED chip may be of any suitable structure, and is not particularly limited herein; the LED chips may be disposed on the substrate in an array and bonded to the circuit substrate by any suitable method.
In step S102, a quarter wave plate may be disposed on a side of the substrate remote from the circuit substrate.
According to the embodiment of the disclosure, the quarter wave plate is arranged on one side of the substrate far away from the circuit substrate, so that the interconversion between the linearly polarized light and the circularly polarized light is realized. The quarter wave plate can be prepared in advance or prepared in the step.
In a preferred embodiment, disposing a quarter wave plate on a side of the substrate remote from the circuit substrate comprises: setting a dichroism dye on one side of the substrate far away from the circuit substrate; optically inducing the dichromatic dye to have a certain orientation; and arranging a liquid crystal material on one side of the dichroism dye away from the substrate to obtain the quarter-wave plate. Wherein the dichromatic dye refers to a dye capable of showing different colors by different light absorption along the major axis and the minor axis directions of dye molecules, and comprises: the azo dye is preferably any one of a cymbidium dye, an azo dye, a leek dye, a polycyclic dye and the like.
Specifically, the azo dye solution is arranged on one side of the substrate far away from the circuit substrate by any one of spin coating, ink-jet printing, pneumatic printing and other suitable methods, and azo dye molecules are oriented by Ultraviolet (UV) light induction; and then further coating a liquid crystal material on the azo dye molecule layer with certain orientation, reasonably controlling the thickness of the liquid crystal material, enabling the liquid crystal material to have the orientation consistent with that of the azo dye molecules, and obtaining the quarter wave plate after curing. Wherein, the azo dye is preferably SD1 (Azobenzene Sulfuric Dye SD, azobenzene sulfuric acid dye SD 1), the molecular formula is Na 4C26H16O12N4S2, the solvent is N, N-Dimethylformamide (DMF), and the mass fraction of the solvent is preferably 0.5-2%. Preferably, the azo dye may use polyvinyl alcohol (PVA) as a support material, and the PVA may be oriented by optical induction, thereby achieving oriented arrangement of azo dye molecules. Any suitable liquid crystal material may be used in embodiments of the present disclosure. According to the embodiment of the disclosure, the SD1 orientation is optically induced, so that the orientation of the liquid crystal material is guided, the preparation process is simple, and the defects of complex process, dust pollution, electrostatic hazard and the like caused by friction orientation can be avoided.
In another preferred embodiment, disposing a quarter wave plate on a side of the substrate remote from the circuit substrate includes: processing one side of the substrate far away from the LED chip to form a texture structure with a certain orientation on the surface of the substrate; and arranging a liquid crystal material on the side of the substrate with the texture structure to obtain the quarter wave plate.
Specifically, a texture structure with a certain orientation is formed on the surface of a substrate through etching processes such as plasma, photoetching and the like or any other applicable method, a liquid crystal material is coated on the surface of the substrate, the thickness of the liquid crystal material is reasonably controlled, the liquid crystal material is oriented along the texture structure, and the quarter wave plate is obtained after solidification. The embodiment of the disclosure guides the liquid crystal to be oriented through the texture structure, and has the advantages of high stability, good reliability, suitability for large-area processing and the like.
In yet another preferred embodiment, disposing a quarter wave plate on a side of the substrate remote from the circuit substrate includes: and setting a birefringent crystal material on one side of the substrate far from the circuit substrate to obtain the quarter wave plate.
Specifically, the birefringent crystal material may be disposed by any suitable method, for example, a birefringent monocrystalline sheet with a certain thickness is adhered to a side of the substrate far from the circuit substrate by using a transparent colloid material, or the birefringent crystal material is coated on a side of the substrate far from the circuit substrate, the thickness of the birefringent crystal material is reasonably controlled, and the quarter-wave plate is obtained after curing. Wherein the birefringent crystal comprises: yttrium vanadate (YVO 4), lithium niobate (LiNbO 3), icelandite (ICELAND SPAR), and alpha-barium metaborate (a-BBO).
Preferably, before the quarter wave plate is disposed on the side of the substrate away from the circuit substrate, the method further comprises: grinding and thinning one side of the substrate far away from the circuit substrate; and polishing the thinned substrate so as to arrange the quarter wave plate on the polished substrate. And grinding the substrate to thin the substrate, and polishing to smooth the surface of the substrate to obtain a transparent substrate, thereby effectively reducing the influence of the substrate on the luminous performance of the device.
In step S103, a polarizing layer may be disposed on a side of the quarter wave plate remote from the substrate.
According to the embodiment of the disclosure, the polarization state of light is changed by arranging the polarization layer, and the ambient light is restrained from being emitted again after entering the LED device by the cooperation of the polarization layer and the quarter wave plate, so that the ambient light contrast of the LED device is improved. It can be appreciated that in the embodiment of the disclosure, the optical axis direction of the quarter wave plate is not limited, so long as the polarization direction of the polarization layer and the optical axis direction of the quarter wave plate form a certain angle when the polarization layer is disposed, the effect of inhibiting the ambient light from entering the LED device and then re-exiting is achieved, and when the polarization direction of the polarization layer and the optical axis direction of the quarter wave plate form a 45 ° angle, the extinction phenomenon occurs when the ambient light enters the LED device and then re-exits, thereby avoiding re-exiting of the ambient light, effectively reducing the influence of the ambient light on the LED device and improving the ambient light contrast of the LED device. The polarizing layer may be a polarizing plate prepared in advance, or may be prepared in this step.
In a preferred embodiment, disposing a polarizing layer on a side of the quarter wave plate remote from the substrate comprises: a dichroic dye is arranged on one side of the quarter wave plate away from the substrate; the dichroic dye is optically induced to have an orientation to obtain the polarizing layer. Wherein the dichroic dye comprises: the azo dye is preferably any one of a cymbidium dye, an azo dye, a leek dye, a polycyclic dye and the like.
Specifically, the azo dye solution is arranged on one side of the quarter wave plate far away from the substrate by any one of spin coating, ink-jet printing, pneumatic printing and other suitable methods, and the azo dye molecules are induced by Ultraviolet (UV) light to have certain orientation, so that a polarizing layer is formed. Wherein the azo dye is preferably AD-1 (Azobenzene Dye AD-1, azo dye AD-1), the molecular formula is C 40H52N6, the solvent is propylene glycol methyl ether acetate, and the mass fraction of the solvent is preferably 20-25%. Preferably, the azo dye may use polyvinyl alcohol (PVA) as a support material, and the PVA may be oriented by optical induction, thereby achieving oriented arrangement of azo dye molecules. According to the embodiment of the disclosure, the azo dye is adopted to prepare the polarizing layer, the preparation process is simple, the molecular orientation of the dye is easy to control, and the thickness of the dye can be reasonably controlled through the process, so that the LED device is controllable in size, quality and application field.
In another preferred embodiment, disposing a polarizing layer on a side of the quarter wave plate remote from the substrate includes: arranging a transparent substrate with a polarizing film and one side of the quarter wave plate far away from the substrate in an opposite way so as to obtain the polarizing layer; wherein the polarizing film is positioned between the transparent substrate and the quarter wave plate. Wherein the transparent substrate comprises any one of polyimide film, glass, quartz and sapphire sheet, preferably polyimide film; the polarizing film on the transparent substrate may be previously set or may be set at this step.
Specifically, the transparent substrate having the polarizing film is disposed opposite to the side of the quarter-wave plate away from the substrate, and any method applicable in the prior art may be used, for example, bonding or press-fitting may be performed by an adhesive to obtain the polarizing layer. Wherein, the polarizing film can be prepared in advance, can be stuck on transparent base plate through the adhesive; or may be prepared directly on a transparent substrate. Wherein, preparing a polarizing film on a transparent substrate may include the steps of: the azo dye solution is arranged on one side of the transparent substrate by any one of spin coating, ink-jet printing, air pressure printing and other suitable methods, and the azo dye molecules are induced by Ultraviolet (UV) light to have certain orientation, so that the polarizing film is obtained.
When the transparent substrate having the polarizing film is disposed opposite to the quarter-wave plate, it should be noted that the polarizing direction of the polarizing film forms an angle with the optical axis direction of the quarter-wave plate, preferably 45 °.
Preferably, the transparent substrate further includes a sacrificial layer between the transparent substrate and the polarizing film. After the transparent substrate with the polarizing film is arranged opposite to the side, away from the substrate, of the quarter-wave plate, arranging the polarizing layer on the side, away from the substrate, of the quarter-wave plate further comprises: and stripping the transparent substrate. Among them, any material suitable for bonding the polarizing film to the transparent substrate and facilitating separation of the polarizing film from the transparent substrate, such as Polyimide (PI) paste, may be used for the sacrificial layer. Through stripping the transparent substrate, the thickness of the LED device can be further thinned, and the influence of the transparent substrate on the light emitting of the LED chip can be avoided, so that the performance of the LED device is improved.
According to the embodiment of the disclosure, the quarter wave plate and the polarizing layer are combined, and the polarizing direction of the polarizing layer and the optical axis direction of the quarter wave plate form an angle of 45 degrees, so that the ambient light is effectively restrained from being emitted again after entering the LED device, and the ambient light contrast ratio of the LED device is improved. The specific principle is as follows: ambient light is typically natural light, including all possible polarization states perpendicular to the direction of ambient light propagation; the ambient light enters the LED device through the polarizing layer, only light with the polarization direction parallel to that of the polarizing layer is transmitted through the polarizing layer, and the transmitted ambient light is linearly polarized light; then converting the linearly polarized light into circularly polarized light through a quarter wave plate; then the reflected ambient light is reflected by the electrode of the LED chip and is converted into linear polarized light by the circularly polarized light, at the moment, the linear polarized light of the original incident quarter wave plate passes through the twice quarter wave plate, the polarization direction of the emergent linear polarized light is rotated 90 degrees compared with that of the linear polarized light of the original incident quarter wave plate, that is, the polarization direction of the linear polarized light emergent from the quarter wave plate is orthogonal with that of the linear polarized light incident from the polarizing layer, therefore, the linear polarized light emergent from the quarter wave plate cannot pass through the polarizing layer, that is, extinction phenomenon occurs, and the aim of inhibiting the re-emergent of the ambient light after the ambient light enters the LED device is fulfilled, and the contrast of the ambient light of the LED device is effectively improved.
In step S104, an encapsulation layer may be disposed on a side of the polarizing layer away from the quarter wave plate, so as to form the LED device.
According to the embodiment of the disclosure, the LED device is protected by arranging the packaging layer, wherein the packaging layer can be prepared in advance or prepared in the step. The material of the packaging layer can be any suitable material in the prior art; the method for setting the encapsulation layer may be any suitable method in the prior art, including but not limited to: spin coating, ink jet printing, pneumatic printing, sol-gel processes, chemical vapor deposition, sputtering, and the like.
Preferably, disposing the encapsulation layer on a side of the polarizing layer away from the quarter wave plate includes: and coating an antireflection material on one side of the polarizing layer far away from the quarter wave plate to form the packaging layer. Wherein, the anti-reflection material can be any material with lower reflectivity, better waterproof and anti-fog performances and stronger corrosion resistance, and can be selected from organic materials or inorganic materials, and the embodiment of the disclosure is preferably polyvinyl alcohol. In order to further enhance the anti-reflection capability of the anti-reflection material, a certain proportion of matte powder (the main component comprises silica) and melanin (the main component comprises epoxy resin and black dye, wherein the mass ratio of the black dye is less than 2%), wherein the mass fraction of the matte powder is not more than 60%, and the mass fraction of the melanin is not more than 3%, can be added into the anti-reflection material.
Preferably, the anti-reflection material coats the LED device. In the embodiment of the disclosure, the anti-reflection material is preferably a high-fluidity anti-reflection material, so that a packaging layer can be arranged in a spin coating, ink-jet printing, pneumatic printing and other modes, and the anti-reflection material can flow to cover the whole LED device, thereby effectively protecting the LED device, effectively reducing the reflection of the side surface of the LED device to the ambient light, and further improving the contrast ratio of the ambient light of the LED device.
According to the embodiment of the disclosure, the quarter wave plate and the polarizing layer are combined, so that the situation that ambient light is emergent again after entering the LED device is effectively avoided; the packaging layer is prepared by adopting an antireflection material, so that the reflection of the LED device on ambient light is reduced; by combining the two, the influence of the ambient light on the LED device can be greatly reduced, and the ambient light contrast of the LED device is improved. In addition, the preparation of the quarter wave plate, the polarizing layer and the packaging layer can be set in the modes of spin coating, ink-jet printing, air pressure printing and the like by reasonably selecting materials, the process is simple, the control is easy, and the preparation cost of the LED device is effectively reduced.
Further preferably, the method for manufacturing an LED device of the present disclosure may further include a method for manufacturing an LED chip, that is: disposing a plurality of LED chips on the substrate; the LED chip comprises a P electrode, wherein the P electrode comprises a metal area and at least one metal wire, and the metal area is electrically connected with the metal wire. The embodiment of the disclosure adopts the specially designed P electrode, so that the overlooking projection area of the P electrode is reduced while the current conductivity is ensured, thereby reducing the reflection of the P electrode to the ambient light and improving the ambient light contrast of the LED device.
It should be noted that, in the embodiment of the present disclosure, the top projection shape of the metal area may be set according to actual needs, for example, may be a circle, a square, a triangle, a polygon, etc., and is not particularly limited herein; the arrangement position of the metal region may be set according to actual needs, and is not particularly limited herein, but is preferably set at the center position of the LED chip (or Mesa) in view of current uniformity; the area of the metal region is preferably 35-40%. The metal wire can be as thin as possible to reduce the metal coverage area, and is used for collecting current to improve the current uniformity; wherein at least one metal line extends outwardly from the metal region; the metal lines may extend to the edges, corners of the meas in any feasible manner, for example: the metal wire can be outwards divergently extended from the metal area, and/or the metal wire is outwards divergently extended around the metal area, and the distance between the edge and/or the end of the metal wire and the outer ring of the Mesa is smaller than 1 μm, so that the area of the electrode is reduced while the current is effectively collected, and the reflection of the LED device to ambient light is further reduced.
Fig. 2 shows a top view of an alternative LED chip 102 in an embodiment of the present disclosure, the LED chip 102 comprising a P-electrode 200, wherein the P-electrode 200 comprises a metal region 201 and six metal lines 202, wherein the metal region 201 is disposed in a central region of the Mesa, and the six metal lines 202 comprise four metal lines divergently extending from the metal region 201 and two metal lines surrounding the metal region 201. It should be understood that the electrode design pattern in fig. 2 is merely exemplary, and the embodiments of the present disclosure may select designs other than the electrode design pattern shown in fig. 2, so long as the design concepts of the present disclosure described above with respect to the electrode are met, and are not limited herein.
Optionally, disposing a plurality of LED chips on the substrate includes: providing a plurality of mesas on the substrate; performing alkaline treatment on the side walls of the plurality of table tops; a current diffusion layer is arranged on the table top; performing double annealing treatment on the current diffusion layer; and arranging the P electrode on the current diffusion layer to obtain the LED chips. The arrangement of the current diffusion layer is beneficial to improving the current uniformity, thereby improving the photoelectric performance of the LED device.
Specifically, a plurality of table tops (i.e. meas) are arranged on a substrate, an epitaxial structure can be obtained by growing on the substrate through an epitaxial growth method, and then a plurality of meas are obtained through etching; or etching the standard epitaxial wafer to obtain a plurality of meas; the structure of the Mesa may be set according to actual needs, and is not particularly limited herein. And then carrying out alkaline treatment on the side wall of the table top, so that the side wall of the table top is vertical as much as possible, and the reflection of light by the side wall of the table top is avoided. And then, arranging a current diffusion layer on the table top, and carrying out double annealing treatment on the current diffusion layer to further improve the current uniformity and realize ohmic contact between the current diffusion layer and the semiconductor layer. And finally, setting a P electrode on the current diffusion layer after the double annealing treatment.
Optionally, the current diffusion layer comprises a nickel/gold bi-layer metal layer or an Indium Tin Oxide (ITO) layer; the double annealing treatment includes: under the condition that the current diffusion layer comprises a nickel/gold double-layer metal layer, placing the nickel/gold double-layer metal layer in an N 2 gas environment at 550-580 ℃ for 4-6min, then placing the nickel/gold double-layer metal layer in a mixed gas environment of N 2 and O 2 at 550-580 ℃ for 4-8min, and finally performing rapid cooling; in the case where the current spreading layer comprises indium tin oxide, it is treated in an O 2 gas atmosphere at a temperature of 550-650 c for 200-400s, and then in an N 2 gas atmosphere at a temperature of 700-800 c for 25-35s. After double annealing treatment, the nickel/gold double-layer metal layer can further improve the conductivity and the transparency; after double annealing treatment, the conductivity of the ITO layer is further improved, so that the current uniformity is further improved.
As shown in fig. 2, the P electrode 200 is disposed on the current diffusion layer 203, and by reasonably controlling the area and thickness of the current diffusion layer 203, the current uniformity of the LED chip can be effectively improved, so that the reflection of the electrode to the ambient light can be reduced by properly reducing the P electrode area.
It may be appreciated that in the embodiments of the present disclosure, a plurality of LED chips may be disposed on a substrate in an array form, each LED chip corresponds to its independent P electrode, the P electrode of each LED chip includes a metal region and at least one metal line, and the top projection shapes of the P electrodes of different LED chips may be the same or different; the LED chip array can share the N electrode, the overlooking projection shape of the N electrode is not limited, and the N electrode can be set according to actual needs; the LED chip may have an independent N electrode, and the N electrode may have any design as shown in fig. 2 in a plan view, or may have any other suitable shape.
Optionally, disposing a plurality of LED chips on the substrate further includes: a passivation layer is arranged on the P electrode; arranging an electrode contact hole on the passivation layer to expose part of the metal region; and arranging a bonding layer in the electrode contact hole. According to the embodiment of the disclosure, the passivation layer is arranged on the P electrode to protect the P electrode, and part of the metal area is exposed through selectively opening the passivation layer, so that the bonding layer is in good contact with the metal area, and the LED chip and the circuit substrate can be well bonded through the bonding layer. It should be appreciated that the passivation layer is also disposed on the N-electrode and also exposes the N-electrode through the electrode contact hole, and the bonding layer is disposed in the electrode contact hole to electrically connect with the N-electrode and to bond with the circuit substrate later.
Further preferably, before the encapsulation layer is disposed on a side of the polarizing layer away from the quarter-wave plate, the method further includes: surrounding dam glue is arranged around the LED chips; and filling a shading material in the area limited by the dam glue.
Specifically, before the packaging layer is arranged, dam glue is arranged around the LED chip array in a glue dispensing mode, and the height and width of the dam are controlled by controlling glue dispensing air pressure and glue dispensing time; and then filling a shading material in the area limited by the dam glue. Wherein, the DAM glue can be DAM glue, milky white or white non-light-absorbing thermosetting material; the light shielding material can adopt high-fluidity anti-reflection adhesive, and can further reduce the reflection of the light shielding material to ambient light by adding melanin, and the embodiment of the disclosure preferably adopts a combination of the two-component epoxy resin adhesive and the melanin. According to the embodiment of the disclosure, the light shielding material is filled between the LED chip and the circuit substrate, so that the reflection of the circuit substrate to the ambient light is further reduced, and the reflection of the light shielding material to the ambient light is further reduced by adding melanin in the anti-reflection adhesive, so that the ambient light contrast of the LED device is further improved. In addition, the arrangement of the dam glue can effectively avoid overflow of the shading material, and adverse effect is caused on an external circuit.
The disclosure also provides an LED device. The LED device can be prepared by the preparation method of the LED device or by any other applicable method.
As shown in fig. 3, the LED device 100 of the embodiment of the present disclosure includes a circuit substrate 101, a plurality of LED chips 102, a quarter wave plate 104, a polarizing layer 105, and an encapsulation layer 106, where the plurality of LED chips 102 are disposed on the circuit substrate 101 through bonding pads 109, the plurality of LED chips 102 include a substrate 103, the substrate 103 is disposed on a side of the plurality of LED chips 102 away from the circuit substrate 101, the quarter wave plate 104 is disposed on a side of the substrate 103 away from the plurality of LED chips 102, the polarizing layer 105 is disposed on a side of the quarter wave plate 104 away from the substrate 103, and the encapsulation layer 106 is disposed on a side of the polarizing layer 105 away from the quarter wave plate 104. It should be understood that the LED chip illustrated in fig. 3 is only illustrative, and is not meant to limit the structure of the LED chip in the technical solution of the present disclosure; the number of LED chips is merely exemplary and is not limited herein.
According to the LED device disclosed by the embodiment of the disclosure, the reflection of the LED device on the ambient light is effectively reduced by combining the quarter wave plate and the polarizing layer, so that the influence of the ambient light on the light emission of the LED device is reduced, and the ambient light contrast of the LED device is improved.
The included angle between the optical axis direction of the quarter wave plate 104 and the polarization direction of the polarizing layer 105 is preferably 45 °, so that the ambient light can be effectively inhibited from being emitted again after entering the LED device, and the contrast ratio of the ambient light of the LED device is further improved.
In a preferred embodiment, the quarter wave plate 104 comprises a dichroic dye and a liquid crystal material, the dichroic dye and the liquid crystal material having the same orientation. Wherein the dichroic dye is disposed between the substrate and the liquid crystal material, the dichroic dye being oriented by optical induction; the dichroic dye includes: the azo dye is preferably any one of a cymbidium dye, an azo dye, a leek dye, a polycyclic dye and the like. Further preferably, the azo dye may use polyvinyl alcohol (PVA) as a support material, and the PVA may be oriented by optical induction, thereby achieving oriented arrangement of azo dye molecules. In the embodiment of the disclosure, the azo dye is preferably SD1 (Azobenzene Sulfuric Dye SD1, azobenzene sulfuric acid dye SD 1), the molecular formula is Na 4C26H16O12N4S2, the solvent is N, N-Dimethylformamide (DMF), and the mass fraction of the solvent is preferably 0.5-2%.
In another preferred embodiment, the surface of the substrate 103 adjacent to the quarter wave plate 104 has an oriented texture; the quarter wave plate 104 comprises a liquid crystal material having the same orientation as the texture.
In yet another preferred embodiment, the quarter wave plate 104 comprises a birefringent crystalline material. Wherein the birefringent crystal comprises any one of yttrium vanadate (YVO 4), lithium niobate (LiNbO 3), icentite (ICELAND SPAR) and alpha-barium metaborate (a-BBO).
Preferably, the polarizing layer 105 includes a dichroic dye having a certain orientation. Wherein the dichroic dye comprises: the azo dye is preferably any one of a cymbidium dye, an azo dye, a leek dye, a polycyclic dye and the like. The azo dye is preferably AD-1 (Azobenzene Dye AD-1, azo dye AD-1), the molecular formula is C 40H52N6, the solvent is propylene glycol methyl ether acetate, and the mass fraction of the solvent is preferably 20-25%.
Optionally, the polarizing layer further includes a transparent substrate (not shown in the figure), and the transparent substrate is disposed on a side of the dichroic dye away from the quarter-wave plate. The transparent substrate can be any one of polyimide film, glass, quartz and sapphire sheet.
Optionally, the encapsulation layer 106 includes an anti-reflection material. Wherein, the anti-reflection material can be any material with lower reflectivity, better waterproof and anti-fog performances and stronger corrosion resistance, and can be selected from organic materials or inorganic materials, and the embodiment of the disclosure is preferably polyvinyl alcohol. In order to further enhance the anti-reflection capability of the anti-reflection material, a certain proportion of matte powder (the main component comprises silica) and melanin (the main component comprises epoxy resin and black dye, wherein the mass ratio of the black dye is less than 2%), wherein the mass fraction of the matte powder is not more than 60%, and the mass fraction of the melanin is not more than 3%, can be added into the anti-reflection material.
Preferably, the anti-reflection material coats the LED device. In the embodiment of the disclosure, the anti-reflection material is preferably a high-fluidity anti-reflection material, so that a packaging layer can be arranged in a spin coating, ink-jet printing, pneumatic printing and other modes, and the anti-reflection material can flow to cover the whole LED device, thereby effectively protecting the LED device, effectively reducing the reflection of the side surface of the LED device to the ambient light, and further improving the contrast ratio of the ambient light of the LED device.
Further preferably, the LED device 100 further includes a dam adhesive 107 and a light shielding material 108, where the dam adhesive 107 is disposed around the LED chips 102, and the light shielding material 108 is disposed between the LED chips and the circuit substrate. Wherein, the DAM glue 107 can be DAM glue, milky white or white non-light absorbing thermosetting material; the light shielding material can be high-fluidity anti-reflection adhesive, and can further reduce reflection of the light shielding material to ambient light by adding melanin, and the embodiment of the disclosure is preferably a combination of the two-component epoxy resin adhesive and the melanin.
Further preferably, the LED chip 102 includes a current diffusion layer (not shown) and a P electrode (not shown) disposed on a side of the current diffusion layer away from the substrate, the P electrode including a metal region and at least one metal line, the metal region being electrically connected to the metal line, the metal line extending to an edge of the current diffusion layer.
It should be noted that, in the embodiment of the present disclosure, the top projection shape of the metal area may be set according to actual needs, for example, may be a circle, a square, a triangle, a polygon, etc., and is not particularly limited herein; the arrangement position of the metal region may be set according to actual needs, and is not particularly limited herein, but is preferably set at the center position of the LED chip (or Mesa) in view of current uniformity; the area of the metal region is preferably 35-40%. The metal wire can be as thin as possible to reduce the metal coverage area, and is used for collecting current to improve the current uniformity; wherein at least one metal line extends outwardly from the metal region; the metal lines may extend to the edges, corners of the meas in any feasible manner, for example: the metal wire can be outwards divergently extended from the metal area, and/or the metal wire is outwards divergently extended around the metal area, and the distance between the edge and/or the end of the metal wire and the outer ring of the Mesa is smaller than 1 μm, so that the area of the electrode is reduced while the current is effectively collected, and the reflection of the LED device to ambient light is further reduced.
As shown in fig. 2, the LED chip 102 includes a P electrode 200 and a current diffusion layer 203, the P electrode 200 is disposed on a side of the current diffusion layer 203 away from the substrate, wherein the P electrode 200 includes a metal region 201 and six metal lines 202, wherein the metal region 201 is disposed in a central region of the Mesa, and the six metal lines 202 include four metal lines divergently extending from the metal region 201 and two metal lines surrounding the metal region 201. It should be understood that the electrode design pattern in fig. 2 is merely exemplary, and the embodiments of the present disclosure may select designs other than the electrode design pattern shown in fig. 2, so long as the design concepts of the present disclosure described above with respect to the electrode are met, and are not limited herein.
According to the embodiment of the disclosure, the quarter wave plate and the polarizing layer are combined, so that the situation that ambient light is emergent again after entering the LED device is effectively avoided; the anti-reflection material is adopted as the packaging layer, so that the reflection of the LED device on ambient light is reduced; the two combined actions can greatly reduce the influence of the ambient light on the LED device and improve the contrast of the ambient light of the LED device. In addition, the embodiment of the disclosure further reduces the reflection of the circuit substrate on the ambient light by arranging the shading material between the LED chip and the circuit substrate, and further reduces the reflection of the shading material on the ambient light by adding melanin in the anti-reflection adhesive, so that the contrast of the ambient light of the LED device is further improved; and the overflow of the shading material is avoided by arranging the dam glue, so that the adverse effect on an external circuit is caused. Furthermore, the embodiment of the disclosure further reduces the overlooking projection area of the P electrode while ensuring the current conductivity by reasonably designing the P electrode of the LED chip, thereby reducing the reflection of the P electrode to the ambient light and improving the ambient light contrast of the LED device.
The disclosure also provides a display device. The display device includes the above-described LED device, which may include a plurality of LED chips. The display device may be, for example, a display screen applied to an electronic apparatus. The electronic device may include: any device with a display screen, such as a smart phone, a smart watch, a notebook computer, a tablet computer, a vehicle recorder, a navigator, and the like.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the present application. As used herein, the singular is also intended to include the plural unless the context clearly indicates otherwise, and furthermore, it is to be understood that the terms "comprises" and/or "comprising" when used in this specification are taken to specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present application and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that embodiments of the application described herein may be capable of being practiced otherwise than as specifically illustrated and described. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The foregoing description of the preferred embodiments of the present disclosure is provided only and not intended to limit the disclosure so that various modifications and changes may be made to the present disclosure by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure should be included in the protection scope of the present disclosure.
Claims (24)
1. A method of manufacturing an LED device, wherein the method comprises:
Providing a plurality of LED chips on a circuit substrate, wherein the plurality of LED chips comprise a substrate;
a quarter wave plate is arranged on one side of the substrate far away from the circuit base plate;
A polarizing layer is arranged on one side of the quarter wave plate, which is far away from the substrate;
arranging an encapsulation layer on one side of the polarizing layer far away from the quarter wave plate to form the LED device; wherein,
The step of arranging the packaging layer on one side of the polarizing layer far away from the quarter wave plate comprises the following steps:
Coating an antireflection material on one side of the polarizing layer far away from the quarter wave plate to form the packaging layer; wherein,
The anti-reflection material comprises polyvinyl alcohol, matte powder and melanin, wherein the mass fraction of the matte powder in the anti-reflection material is not more than 60%, and the mass fraction of the melanin in the anti-reflection material is not more than 3%; the melanin comprises epoxy resin and black dye, wherein the mass fraction of the black dye in the melanin is less than 2%.
2. The method of manufacturing an LED device of claim 1, wherein disposing a quarter wave plate on a side of the substrate remote from the circuit substrate comprises:
setting a dichroism dye on one side of the substrate far away from the circuit substrate;
optically inducing the dichromatic dye to have a certain orientation;
And arranging a liquid crystal material on one side of the dichroism dye away from the substrate to obtain the quarter-wave plate.
3. The method of manufacturing an LED device according to claim 2, wherein the dichroic dye is an azo dye.
4. The method of manufacturing an LED device of claim 1, wherein disposing a quarter wave plate on a side of the substrate remote from the circuit substrate comprises:
processing one side of the substrate far away from the LED chip to form a texture structure with a certain orientation on the surface of the substrate;
And arranging a liquid crystal material on the side of the substrate with the texture structure to obtain the quarter wave plate.
5. The method of manufacturing an LED device of claim 1, wherein disposing a quarter wave plate on a side of the substrate remote from the circuit substrate comprises:
And setting a birefringent crystal material on one side of the substrate far from the circuit substrate to obtain the quarter wave plate.
6. The method of manufacturing an LED device of claim 1, wherein before disposing the quarter wave plate on the side of the substrate remote from the circuit substrate, the method further comprises:
grinding and thinning one side of the substrate far away from the circuit substrate;
And polishing the thinned substrate so as to arrange the quarter wave plate on the polished substrate.
7. The method of manufacturing an LED device of claim 1, wherein disposing a polarizing layer on a side of the quarter wave plate remote from the substrate comprises:
a dichroic dye is arranged on one side of the quarter wave plate away from the substrate;
The dichroic dye is optically induced to have an orientation to obtain the polarizing layer.
8. The method of manufacturing an LED device of claim 1, wherein disposing a polarizing layer on a side of the quarter wave plate remote from the substrate comprises:
Arranging a transparent substrate with a polarizing film and one side of the quarter wave plate far away from the substrate in an opposite way so as to obtain the polarizing layer; wherein the polarizing film is positioned between the transparent substrate and the quarter wave plate.
9. The method of manufacturing an LED device of claim 8, wherein the transparent substrate further comprises a sacrificial layer between the transparent substrate and the polarizing film.
10. The method for manufacturing an LED device according to claim 9, wherein after disposing the transparent substrate having the polarizing film opposite to the side of the quarter-wave plate away from the substrate, disposing the polarizing layer on the side of the quarter-wave plate away from the substrate further comprises:
And stripping the transparent substrate.
11. The manufacturing method of the LED device according to claim 1, wherein an angle between an optical axis direction of the quarter wave plate and a polarization direction of the polarizing layer is 45 °.
12. The method of manufacturing an LED device of claim 11, wherein said anti-reflective material encapsulates said LED device.
13. The method of manufacturing an LED device of claim 1, wherein prior to disposing the plurality of LED chips on the circuit substrate, the method further comprises:
Disposing a plurality of LED chips on the substrate; the LED chip comprises a P electrode, wherein the P electrode comprises a metal area and at least one metal wire, and the metal area is electrically connected with the metal wire.
14. The method of manufacturing an LED device of claim 1, wherein prior to disposing an encapsulation layer on a side of the polarizing layer remote from the quarter wave plate, the method further comprises:
Surrounding dam glue is arranged around the LED chips;
And filling a shading material in the area limited by the dam glue.
15. The LED device comprises a circuit substrate, a plurality of LED chips, a quarter wave plate, a polarizing layer and a packaging layer, wherein the LED chips are arranged on the circuit substrate, the LED chips comprise a substrate, the substrate is arranged on one side of the LED chips far away from the circuit substrate, the quarter wave plate is arranged on one side of the substrate far away from the LED chips, the polarizing layer is arranged on one side of the quarter wave plate far away from the substrate, and the packaging layer is arranged on one side of the polarizing layer far away from the quarter wave plate; wherein,
The packaging layer is made of an anti-reflection material; wherein,
The anti-reflection material comprises polyvinyl alcohol, matte powder and melanin, wherein the mass fraction of the matte powder in the anti-reflection material is not more than 60%, and the mass fraction of the melanin in the anti-reflection material is not more than 3%; the melanin comprises epoxy resin and black dye, wherein the mass fraction of the black dye in the melanin is less than 2%.
16. The LED device of claim 15, wherein the quarter wave plate has an optical axis direction that is 45 ° from the polarization direction of the polarizing layer.
17. The LED device of claim 16, wherein the quarter wave plate comprises a dichroic dye and a liquid crystal material.
18. The LED device of claim 16, wherein a surface of the substrate proximate the quarter wave plate has an oriented texture; the quarter wave plate comprises a liquid crystal material having the same orientation as the texture.
19. The LED device of claim 16, wherein the quarter wave plate comprises a birefringent crystalline material; the polarizing layer includes a dichroic dye.
20. The LED device of claim 19, wherein the polarizing layer further comprises a transparent substrate disposed on a side of the dichroic dye remote from the quarter wave plate.
21. The LED device of claim 15, further comprising a dam glue disposed around the plurality of LED chips.
22. The LED device of claim 21, further comprising a light shielding material disposed between the plurality of LED chips and the circuit substrate.
23. The LED device of claim 15, wherein the LED chip further comprises a current spreading layer and a P electrode disposed on a side of the current spreading layer remote from the substrate, the P electrode comprising a metal region and at least one metal line, the metal region being electrically connected to the metal line.
24. A display apparatus, wherein the display apparatus comprises the LED device of any one of claims 15 to 23.
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