CN114335208A - Novel gallium arsenide solar cell and manufacturing method thereof - Google Patents

Novel gallium arsenide solar cell and manufacturing method thereof Download PDF

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CN114335208A
CN114335208A CN202210254513.XA CN202210254513A CN114335208A CN 114335208 A CN114335208 A CN 114335208A CN 202210254513 A CN202210254513 A CN 202210254513A CN 114335208 A CN114335208 A CN 114335208A
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徐培强
李俊承
林晓珊
潘彬
王向武
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Nanchang Kaixun Photoelectric Co ltd
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Abstract

The invention relates to a novel gallium arsenide solar cell and a manufacturing method thereof, and belongs to the technical field of solar cells. The novel gallium arsenide solar cell substrate layer, a bottom cell, a GaAs buffer layer, a first tunneling junction, a first DBR layer, a middle cell, a second tunneling junction, a second DBR layer, a top cell and a cap layer are epitaxially grown on the substrate layer in sequence; by adopting the Al-containing component gradient active regions on the sides close to the window layers in the middle cell and the top cell respectively, the reflection condition caused by different refractive indexes among different materials can be improved, the absorption probability of sunlight is improved, the absorption of the solar cell to the sunlight is increased, and the photoelectric conversion efficiency and the anti-irradiation performance of the solar cell are improved.

Description

Novel gallium arsenide solar cell and manufacturing method thereof
Technical Field
The invention relates to the technical field of solar cells, in particular to a novel gallium arsenide solar cell and a manufacturing method thereof.
Background
Compared with the traditional silicon (Si) solar cell, the triple-junction gallium arsenide (GaInP/GaAs/Ge) solar cell has the advantages of high conversion efficiency, high reliability, small temperature coefficient and the like, is widely applied to space vehicles such as deep space detectors, various satellites, manned spacecrafts and the like, and provides continuous energy supply for the space equipment. The conventional triple-junction gallium arsenide solar cell is of a lattice matching type structure, the process is relatively simple and easy to implement, the average conversion efficiency of the solar cell is very close to 31.8% of the semi-empirical theoretical technology along with the continuous progress of the technology, and the space for simply improving the photoelectric performance of the solar cell by the material quality, doping and other modes is very limited. Therefore, the applicant provides a novel gallium arsenide solar cell and a manufacturing method thereof, and from the optical perspective, the solar cell can improve the sunlight absorption rate, and further improve the conversion efficiency of the cell structure.
Disclosure of Invention
Based on the defects of the prior art, the invention provides a novel gallium arsenide solar cell and a manufacturing method thereof, wherein the reflecting condition caused by different refractive indexes among different materials can be improved, the absorption probability of sunlight is improved, the band gap of the cell material is increased, and the open-circuit voltage is increased by adopting the Al-containing component gradual change active region at one side close to a window layer; in addition, because the atomic bond energy of the Al atom is strong, the defects such as vacancy and the like caused by penetration of high-energy particles can be reduced, and the irradiation performance is improved.
Based on this, the present invention provides a novel gallium arsenide solar cell, comprising:
a substrate layer;
the bottom battery, the GaAs buffer layer, the first tunnel junction, the first DBR layer, the middle battery, the second tunnel junction, the second DBR layer, the top battery and the cap layer are epitaxially grown on the substrate layer in sequence;
the middle battery sequentially comprises an AlGaAs back electric field, an InGaAs base region, an AlInGaAs gradient emitter region and a GaInP window layer along the growth direction, and the AlInGaAs gradient base region and the AlInGaAs gradient emitter region form an AlInGaAs sectional gradient structure;
the AlIIn nGaAs sectional gradual change structure, Al component y1：
Figure 162240DEST_PATH_IMAGE001
Wherein, y1Is formed along the middle cell back electric field direction x at the GaInP window layer1Al component of (d)1Is the sum of the thicknesses of the base region and the emitter region of the middle cell, and is AlxIs an initial value of Al component of the AlInGaAs material, and the range is 70% -90%; an In component of 0.01 and a Ga component of 0.99-y1；
The top battery sequentially comprises an AlGaInP back electric field, a GaInP base region, an AlGaInP gradient emitting region and an AlInP window layer along the growth direction, and the AlGaInP gradient base region and the AlGaInP gradient emitting region form an AlGaInP sectional gradient structure;
al component y in the AlGaInP sectional type gradient structure2：
Figure 297686DEST_PATH_IMAGE002
Wherein, y2Is formed by the AlInP window layer along the direction x of the back electric field of the top cell2Al component of (d)2The sum of the thicknesses of the base region and the emitter region of the top cell; an In component of 0.5 and a Ga component of 0.5-y2。
Preferably, the bottom cell sequentially comprises a P-Ge base region, an N-Ge emitting region and a GaInP nucleating layer from bottom to top;
the P-Ge base region is used as the base region of the bottom cell and is formed by a P-type Ge substrate;
passing PH on the surface of the P-type Ge substrate3Diffusing to form an N-Ge emission region;
the thickness of the N-Ge emitting region is 0.1-0.3 mu m, and the thickness of the GaInP nucleating layer is 0.03-0.10 mu m.
Preferably, the GaAs buffer layer has a thickness of 0.2-0.6 μm and a doping concentration greater than 5 × 1016/cm3。
Preferably, the first tunneling junction is N++GaAs/ P++GaAs；
Wherein N is++The thickness of GaAs is 10-30 nm, and P++The thickness of GaAs is 10-30 nm;
the dopant of the N-type material is one or the combination of Te, Se and Si with the doping concentration of 3 multiplied by 1018～3×1019/cm3；
The dopant of the P-type material is one or the combination of more of Mg, Zn and C, and the doping concentration requires 2 x 1019～8×1019/cm3。
Preferably, the first DBR layer is composed of 20-40 pairs of AlGaAs/GaAs structures, the thicknesses of the AlGaAs layer and the GaAs layer in each pair of AlGaAs/GaAs structures are calculated according to lambda/4 n, wherein lambda is more than or equal to 850nm and less than or equal to 920nm, and n is the refractive index of the corresponding AlGaAs or GaAs material; the Al mole component in the AlGaAs is 50-90%.
Preferably, in the middle battery, the thickness of the AlGaAs back electric field is 0.05-0.1 μm, the total thickness of the base region and the emitter region is 1.5-2.5 μm, the thickness of the AlInGaAs gradual change emitter region is 0.1-0.2 μm, and the thickness of the GaInP window layer is 0.05-0.15 μm; the thickness of the AlInGaAs sectional type gradient structure is 0.6-1.7 mu m, and the thickness of the InGaAs base region is at least 1 mu m.
Preferably, the second tunneling junction is n++GaInP/p++AlGaAs; wherein n is++The thickness of GaInP is 10-30 nm, p++The thickness of AlGaAs is 10-30 nm; the dopant of the N-type material is one or the combination of Te, Se and Si with the doping concentration of 3 multiplied by 1018～3×1019/cm3(ii) a The dopant of the P-type material is one or the combination of more of Mg, Zn and C, and the doping concentration requires 2 x 1019～8×1019/cm3。
Preferably, the second DBR layer consists of 10-20 pairs of AlInP/GaInP structures, the thickness of the AlInP layer and the GaInP layer in each pair of the AlInP/GaInP structures is calculated according to lambda/4 n, wherein lambda is larger than or equal to 620nm and smaller than or equal to 690nm, and n is the refractive index of the corresponding AlInP or GaInP material.
Preferably, in the top cell, the thickness of the AlGaInP back electric field is 0.02-0.05 μm, the total thickness of the base region and the emitter region is 0.6-1.2 μm, and the thickness of the AlInP window layer is 0.02-0.05 μm; the thickness of the AlGaInP sectional type gradient structure is 0.2-0.8 mu m, and meanwhile, the thickness of the GaInP base region is required to be at least 0.4 mu m.
Preferably, the cap layer is GaAs, the thickness is 0.3-0.7 μm, and the doping concentration is more than 2 × 1018/cm3。
The invention also provides a preparation method of the novel gallium arsenide solar cell, which comprises the following steps:
providing a P-type Ge substrate;
passing PH on the P-type Ge substrate3Diffusing to form an N-Ge emitting region, and then growing a GaInP nucleating layer which is simultaneously used as a window layer of the bottom cell;
epitaxially growing a GaAs buffer layer, a first tunneling junction, a first DBR layer, a middle battery, a second tunneling junction, a second DBR layer, a top battery and a cap layer on the bottom battery in sequence;
the middle battery sequentially comprises an AlGaAs back electric field, an InGaAs base region, an AlInGaAs gradient emitter region and a GaInP window layer along the growth direction, and the AlInGaAs gradient base region and the AlInGaAs gradient emitter region form an AlInGaAs sectional gradient structure;
in the AlInGaAs sectional type gradient structure, the Al component y1：
Figure 907659DEST_PATH_IMAGE003
Wherein, y1Is formed along the middle cell back electric field direction x at the GaInP window layer1Al component of (d)1Is the sum of the thicknesses of the base region and the emitter region of the middle cell, and is AlxIs an initial value of Al component of the AlInGaAs material, and the range is 70% -90%; an In component of 0.01 and a Ga component of 0.99-y1；
The top battery sequentially comprises an AlGaInP back electric field, a GaInP base region, an AlGaInP gradient emitting region and an AlInP window layer along the growth direction, and the AlGaInP gradient base region and the AlGaInP gradient emitting region form an AlGaInP sectional gradient structure;
al component y in the AlGaInP sectional type gradient structure2：
Figure 671215DEST_PATH_IMAGE002
Wherein, y2Is formed by the AlInP window layer along the direction x of the back electric field of the top cell2Al component of (d)2The sum of the thicknesses of the base region and the emitter region of the top cell; an In component of 0.5 and a Ga component of 0.5-y2。
Compared with the prior art, the invention has the following beneficial effects:
(1) according to the novel gallium arsenide solar cell, the base region and the emitter region (collectively called as the active region) with the gradually-changed Al components are arranged on the sides, close to the window layer, of the middle cell and the top cell, so that the reflection condition caused by different refractive indexes of different materials can be improved, the absorption probability of sunlight is greatly improved, the absorption of the solar cell to the sunlight is increased, and the photoelectric conversion efficiency of the solar cell is improved;
(2) according to the novel gallium arsenide solar cell, after Al atoms are doped into the active region, the band gap of the active region of the cell can be improved, the open-circuit voltage is increased, and the photoelectric conversion efficiency of the solar cell is improved;
(3) the application provides a novel gallium arsenide solar cell, because the atomic bond energy of Al atom is strong, can reduce because of defects such as vacancy that high energy particle pierces through and arouses, promote the irradiation performance of whole solar cell product.
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The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
fig. 1 is a schematic structural diagram of a novel gallium arsenide solar cell according to an embodiment of the present disclosure;
FIG. 2 is a schematic diagram of the cell of FIG. 1;
FIG. 3 is a schematic diagram of a middle cell AlInGaAs segmented graded structure;
FIG. 4 is a schematic diagram of the top cell of FIG. 1;
FIG. 5 is a schematic diagram of a top cell AlGaInP segmented graded structure;
the light emitting diode comprises a substrate layer 100, a bottom cell 200, a GaAs buffer layer 301, a first tunnel junction 401, a first DBR layer 501, a middle cell 600, an AlGaAs back electric field 610, an InGaAs base region 621, an AlInGaAs graded base region 622, an AlInGaAs graded emitter region 630, a GaInP window layer 640, an AlInGaAs segmented graded structure 625, a second tunnel junction 402, a second DBR layer 502, a top cell 700, an AlGaInP back electric field 710, a GaInP base region 721, an AlGaInP graded base region 722, an AlGaInP graded emitter region 730, an AlGaInP segmented graded structure 725, an AlInP window layer 740 and a cap layer 800.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the application, its application, or uses. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The relative arrangement of the components and steps, the numerical expressions, and numerical values set forth in these embodiments do not limit the scope of the present application unless specifically stated otherwise. Meanwhile, it should be understood that the sizes of the respective portions shown in the drawings are not drawn in an actual proportional relationship for the convenience of description. Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate. In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
In the description of the present application, it should be understood that the terms "first", "second", etc. are used to define the components, and are used only for the convenience of distinguishing the corresponding components, and if not otherwise stated, the terms have no special meaning, and thus, should not be construed as limiting the scope of the present application.
In the description of the present application, it is to be understood that the orientation or positional relationship indicated by the directional terms such as "front, rear, upper, lower, left, right", "lateral, vertical, horizontal" and "top, bottom", etc., are generally based on the orientation or positional relationship shown in the drawings, and are used for convenience of description and simplicity of description only, and in the case of not making a reverse description, these directional terms do not indicate and imply that the device or element being referred to must have a particular orientation or be constructed and operated in a particular orientation, and therefore, should not be considered as limiting the scope of the present application; the terms "inner and outer" refer to the inner and outer relative to the profile of the respective component itself.
The present application is described in detail below with reference to fig. 1 to 5, and a specific embodiment of the present invention provides a novel gallium arsenide solar cell:
referring to fig. 1, the solar cell includes: a substrate layer 100; a bottom battery 200, a GaAs buffer layer 301, a first tunnel junction 401, a first DBR layer 501, a middle battery 600, a second tunnel junction 402, a second DBR layer 502, a top battery 700 and a cap layer 800 which are epitaxially grown in sequence on the substrate layer 100;
fig. 2 to fig. 3 show specific structures of the middle cell 600, where the middle cell 600 sequentially includes an AlGaAs back electric field 610, an InGaAs base region 621, an AlInGaAs graded base region 622, an AlInGaAs graded emitter region 630, and a GaInP window layer 640 along a growth direction, the AlInGaAs graded base region 622 and the AlInGaAs graded emitter region 630 form an AlInGaAs graded structure 625, an Al component of the AlInGaAs graded structure 625 on a side close to the GaInP window layer 640 is 70% to 90%, and then the Al component decreases along the back electric field direction until the Al component decreases to 0;
specifically, the Al composition in the AlInGaAs segmented graded structure 625 of the present application is:
Figure 98655DEST_PATH_IMAGE003
wherein, y1Is formed along the middle cell back electric field direction x at the GaInP window layer1Al component of (d)1Is the sum of the thicknesses of the base region and the emitter region of the middle cell, and is AlxIs an initial value of Al component of the AlInGaAs material, and the range is 70% -90%; an In component of 0.01 and a Ga component of 0.99-y1；
In the technical solution of the present application, the Al component in the AlInGaAs graded structure 625 on the side close to the GaInP window layer 640 is limited to 70% to 90%, the refractive index of the Al component is close to that of GaInP in this range, and if the Al component content is greater than 90%, oxidation is likely to occur to cause device performance failure.
In some preferred embodiments, in the middle cell 600 of the novel gallium arsenide solar cell, the thickness of the AlGaAs back electric field 610 is 0.05-0.1 μm, the total thickness of the base region and the emitter region is 1.5-2.5 μm, the thickness of the AlInGaAs graded emitter region 630 is 0.1-0.2 μm, and the thickness of the GaInP window layer 640 is 0.05-0.15 μm; the thickness of the AlInGaAs sectional type gradient structure 625 is 0.6-1.7 μm, and the thickness of the InGaAs base region 621 is at least 1 μm.
Fig. 4 to 5 show specific structures of the top cell 700, the top cell 700 sequentially includes an AlGaInP back electric field 710, a GaInP base region 721, an AlGaInP graded base region 722, an AlGaInP graded emitter region 730 and an AlInP window layer 740 along a growth direction, the AlGaInP graded base region 722 and the AlGaInP graded emitter region 730 form an AlGaInP segmented graded structure 725, an Al component on a side of the AlGaInP segmented graded structure 725 close to the AlInP window layer 740 is 50%, and then the Al component decreases along the back electric field direction until the Al component decreases to 0.
Specifically, the Al component y in the AlGaInP segmented graded structure 725 of the present application2：
Figure 721397DEST_PATH_IMAGE002
Wherein, y2Is formed by the AlInP window layer along the direction x of the back electric field of the top cell2Al component of (d)2The sum of the thicknesses of the base region and the emitter region of the top cell; an In component of 0.5 and a Ga component of 0.5-y2。
In the technical scheme of the application, the Al composition of the AlGaInP segmented graded structure 725 near the AlInP window layer 740 is limited to 50%, so that the composition of the Al composition is consistent with that of the AlInP window layer 740, and the refractive index is kept consistent with that of the window layer, which is beneficial to reducing the reflection probability of incident light.
In some preferred embodiments, in the top cell 700 of the novel gallium arsenide solar cell, the thickness of the AlGaInP back electric field 710 is 0.02-0.05 μm, the total thickness of the base region and the emitter region is 0.6-1.2 μm, and the thickness of the AlInP window layer 740 is 0.02-0.05 μm; the thickness of the AlGaInP sectional gradient structure 725 is 0.2-0.8 μm, and the thickness of the GaInP base region 721 needs to be at least 0.4 μm.
The invention also provides a bottom battery 200 structure which is optimized by the novel gallium arsenide solar battery; in some preferred embodiments, the bottom cell 200 of the novel gallium arsenide solar cell comprises a P-Ge base region, an N-Ge emitter region and a GaInP nucleating layer from bottom to top in sequence; the P-Ge base region is used as the base region of the bottom cell 200 and is formed by a P-type Ge substrate; passing PH on the surface of the P-type Ge substrate3Diffusing to form an N-Ge emission region; the thickness of the N-Ge emitting region is 0.1-0.3 mu m, and the thickness of the GaInP nucleating layer is 0.03-0.10 mu m.
The invention also provides a GaAs buffer layer 301 structure which is optimized by the novel gallium arsenide solar cell; in some preferred embodiments, the GaAs buffer layer 301 of the novel GaAs solar cell has a thickness of 0.2-0.6 μm and a doping concentration of more than 5 × 1016/cm3。
The invention also provides a preferable first tunneling junction 401 structure of the novel gallium arsenide solar cell, and in some preferable embodiments, the first tunneling junction 401 of the novel gallium arsenide solar cell is N++GaAs/ P++GaAs; wherein N is++The thickness of GaAs is 10-30 nm, and P++The thickness of GaAs is 10-30 nm; of N-type materialThe dopant is one or more of Te, Se and Si with a doping concentration of 3 × 1018～3×1019/cm3(ii) a The dopant of the P-type material is one or the combination of more of Mg, Zn and C, and the doping concentration requires 2 x 1019～8×1019/cm3。
The invention also provides a first DBR layer 501 structure which is optimized by the novel gallium arsenide solar cell; in some preferred embodiments, the first DBR layer 501 of the novel GaAs solar cell is composed of 20-40 pairs of AlGaAs/GaAs structures, the thickness of the AlGaAs layer and the GaAs layer in each pair of AlGaAs/GaAs structures is calculated according to lambda/4 n, wherein lambda is larger than or equal to 850nm and smaller than or equal to 920nm, and n is the refractive index of the corresponding AlGaAs or GaAs material; the Al mole component in the AlGaAs is 50-90%.
The invention also provides a preferable second tunneling junction 402 structure of the novel gallium arsenide solar cell; in some preferred embodiments, the second tunnel junction 402 of the novel gallium arsenide solar cell is n++GaInP/p++AlGaAs; wherein n is++The thickness of GaInP is 10-30 nm, p++The thickness of AlGaAs is 10-30 nm; the dopant of the N-type material is one or the combination of Te, Se and Si with the doping concentration of 3 multiplied by 1018～3×1019/cm3(ii) a The dopant of the P-type material is one or the combination of more of Mg, Zn and C, and the doping concentration requires 2 x 1019～8×1019/cm3。
The invention also provides a preferable second DBR layer 502 structure of the novel gallium arsenide solar cell; in some preferred embodiments, the second DBR layer 502 of the novel GaAs solar cell is composed of 10-20 pairs of AlInP/GaInP structures, and the thickness of the AlInP layer and the GaInP layer in each pair of the AlInP/GaInP structures is calculated according to lambda/4 n, wherein lambda is larger than or equal to 620nm and smaller than or equal to 690nm, and n is the refractive index of the corresponding AlInP or GaInP material.
The invention also provides an optimized cap layer 800 structure of the novel gallium arsenide solar cell; in some preferred embodiments, the cap layer 800 of the novel gallium arsenide solar cell is GaAs, has a thickness of 0.3 to 0.7 μm, and has a doping concentration greater than 2 × 1018/cm3。
In other preferred embodiments, the present invention further provides a method for preparing the above novel gallium arsenide solar cell, which specifically includes the following steps:
providing a P-type Ge substrate;
passing PH on the P-type Ge substrate3Diffusing to form an N-Ge emitting region, and then growing a GaInP nucleating layer which is simultaneously used as a window layer of the bottom cell 200;
epitaxially growing a GaAs buffer layer 301, a first tunnel junction 401, a first DBR layer 501, a middle cell 600, a second tunnel junction 402, a second DBR layer 502, a top cell 700 and a cap layer 800 on the bottom cell 200 in sequence;
the middle cell 600 sequentially comprises an AlGaAs back electric field 610, an InGaAs base region 621, an AlInGaAs gradient base region 622, an AlInGaAs gradient emitter region 630 and a GaInP window layer 640 along the growth direction, the AlInGaAs gradient base region 622 and the AlInGaAs gradient emitter region 630 form an AlInGaAs sectional gradient structure 625, the Al component on one side, close to the GaInP window layer 640, of the AlInGaAs sectional gradient structure 625 is 70% -90%, then the Al component is reduced along the back electric field direction until the Al component is reduced to 0, and the specific content changes as described above.
The top cell 700 sequentially comprises an AlGaInP back electric field 710, a GaInP base region 721, an AlGaInP gradient base region 722, an AlGaInP gradient emitter region 730 and an AlInP window layer 740 along the growth direction, the AlGaInP gradient base region 722 and the AlGaInP gradient emitter region 730 form an AlGaInP sectional gradient structure 725, the Al component of one side, close to the AlInP window layer 740, of the AlGaInP sectional gradient structure 725 is 50%, and then the Al component is reduced along the back electric field direction until the Al component is reduced to 0, and the specific content is changed as described above.
Referring to fig. 1 to 5, the present application provides a specific preparation embodiment of a novel gallium arsenide solar cell, which includes the following steps:
s01: passing PH on P-type Ge substrate3Diffusing to form an N-Ge emitting region with the thickness of 0.2 mu m, and then growing a GaInP nucleating layer with the thickness of 0.05 mu m, wherein the GaInP nucleating layer is simultaneously used as a window layer of the bottom cell;
s02: a GaAs buffer layer was then grown to a thickness of 0 a.4 μm, doping concentration 5X 1017/cm3；
S03: a first tunnel junction is then grown. The first tunneling junction is N++GaAs/P++GaAs structure in which N++GaAs had a thickness of 0.02 μm and a doping concentration of 1.5X 1019/cm3The dopant is Si; p++GaAs has a thickness of 0.02 μm and a doping concentration of 4 × 1019/cm3The dopant is C;
s04: then growing a first DBR consisting of 20 pairs of Al0.7Ga0.3As/GaAs structure composition, each pair of Al0.7Ga0.3Al in As/GaAs structure0.7Ga0.3The thickness of the As layer and the GaAs layer is calculated according to lambda/4 n, wherein lambda is more than or equal to 850nm and less than or equal to 920nm, and n is corresponding Al0.7Ga0.3Refractive index of As or GaAs material;
s05: and then growing a middle battery, wherein the middle battery comprises an AlGaAs back electric field, an (Al) InGaAs base region, an AlInGaAs emitter region and a GaInP window layer. The thickness of AlGaAs back electric field is 0.06 μm, the thickness of (Al) InGaAs base region is 1.8 μm, the thickness of AlInGaAs emitter region is 0.15 μm, the thickness of GaInP window layer is 0.1 μm, the thickness of (Al) InGaAs base region and AlInGaAs emitter region are segmented gradual change structure containing Al, the Al component is 80% near one side of window layer, then the Al component is reduced along the direction of AlGaAs back electric field, the Al component in AlInGaAs segmented gradual change structure:
Figure 135061DEST_PATH_IMAGE003
wherein, y1Is formed along the middle cell back electric field direction x at the GaInP window layer1Al component of (d)1Is the sum of the thicknesses of the base region and the emitter region of the middle cell, and is AlxThe initial value of Al component of AlInGaAs material is 70% -90%, until Al component is reduced to 0, In component is 0.01, Ga component is 0.99-y1(ii) a The thickness of the Al component gradient layer is 0.8 μm, and the thickness of the InGaAs base region is 1.15 μm;
s06: a second tunnel junction is then grown. The second tunneling junction tunnel junction is N++GaInP/P++In0.2AlGaAs structure, in which N++GaInP thickness of 0.015 μm and doping concentration of 2 × 1019/cm3The doping agent is a combination of Te and Si; p++In0.2AlGaAs is 0.015 μm thick and doped at 5X 1019/cm3The dopant is Zn and C;
s07: then growing a second DBR, wherein the second DBR consists of 15 pairs of AlInP/GaInP structures, the thickness of an AlInP layer and a GaInP layer in each pair of the AlInP/GaInP structures is calculated according to lambda/4 n, lambda is larger than or equal to 620nm and smaller than or equal to 690nm, and n is the refractive index of the corresponding AlInP or GaInP material;
s08: and then growing a top cell, wherein the top cell comprises an AlGaInP back electric field, an (Al) GaInP base region, an AlGaInP emitting region and an AlInP window layer. Wherein, the thickness of the AlGaInP back electric field is 0.04 μm, the total thickness of the (Al) GaInP base region and the AlGaInP emitting region is 0.75 μm, and the thickness of the AlInP window layer is 0.03 μm. The (Al) GaInP base region and the AlGaInP emitting region are of a sectional gradient structure containing Al, the Al component is 50% near one side of the window layer, then the Al component is reduced along the AlGaInP back electric field direction, and the Al component y in the AlGaInP sectional gradient structure2：
Figure 644802DEST_PATH_IMAGE002
Wherein, y2Is formed by the AlInP window layer along the direction x of the back electric field of the top cell2Al component of (d)2The thickness of the base region and the emitter region of the top cell is the sum of the thicknesses until the Al component is reduced to 0, the In component is 0.5, and the Ga component is 0.5-y2(ii) a The thickness of the Al component gradient layer is 0.25 μm, and the thickness of the GaInP base region is 0.5 μm;
s09: the cap layer is GaAs with a thickness of 0.55 μm and a doping concentration of 4 × 1018/cm3。
The performance of the prepared gallium arsenide solar cell is tested, the existing products which are not improved by the middle cell and the top cell are used as comparison, and the performance parameters of the gallium arsenide solar cell before and after irradiation are shown in table 1:
table 1: the gallium arsenide solar cell provided by the preparation example and the detection result of the existing product
Figure 118508DEST_PATH_IMAGE004
Therefore, compared with the existing product, the solar cell provided by the application has higher photoelectric conversion efficiency and better radiation resistance.
What is not described in this embodiment may be referred to in the relevant description of the rest of the application.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solutions of the present application and not to limit them; although the present application has been described in detail with reference to preferred embodiments, those of ordinary skill in the art will understand that: modifications to the embodiments of the present application or equivalent replacements of some technical features may still be made, which should all be covered by the scope of the technical solution claimed in the present application.

Claims (10)

1. A novel gallium arsenide solar cell, comprising:
a substrate layer;
the bottom battery, the GaAs buffer layer, the first tunnel junction, the first DBR layer, the middle battery, the second tunnel junction, the second DBR layer, the top battery and the cap layer are epitaxially grown on the substrate layer in sequence;
the middle battery sequentially comprises an AlGaAs back electric field, an InGaAs base region, an AlInGaAs gradient emitter region and a GaInP window layer along the growth direction, and the AlInGaAs gradient base region and the AlInGaAs gradient emitter region form an AlInGaAs sectional gradient structure;
in the AlInGaAs sectional type gradient structure, the Al component y1：
Figure 726668DEST_PATH_IMAGE001
Wherein, y1Is formed along the middle cell back electric field direction x at the GaInP window layer1Al component of (d)1Is the sum of the thicknesses of the base region and the emitter region of the middle cell, and is AlxIs an initial value of Al component of the AlInGaAs material, and the range is 70% -90%; an In component of 0.01 and a Ga component of 0.99-y1；
The top battery sequentially comprises an AlGaInP back electric field, a GaInP base region, an AlGaInP gradient emitting region and an AlInP window layer along the growth direction, and the AlGaInP gradient base region and the AlGaInP gradient emitting region form an AlGaInP sectional gradient structure;
al component y in the AlGaInP sectional type gradient structure2：
Figure 640397DEST_PATH_IMAGE002
Wherein, y2Is formed by the AlInP window layer along the direction x of the back electric field of the top cell2Al component of (d)2The sum of the thicknesses of the base region and the emitter region of the top cell; an In component of 0.5 and a Ga component of 0.5-y2。
2. The novel GaAs solar cell of claim 1, wherein,
the bottom cell sequentially comprises a P-Ge base region, an N-Ge emitting region and a GaInP nucleating layer from bottom to top;
the P-Ge base region is used as the base region of the bottom cell and is formed by a P-type Ge substrate;
passing PH on the surface of the P-type Ge substrate3Diffusing to form an N-Ge emission region;
the thickness of the N-Ge emitting region is 0.1-0.3 mu m, and the thickness of the GaInP nucleating layer is 0.03-0.10 mu m.
3. The GaAs solar cell of claim 1, wherein the GaAs buffer layer has a thickness of 0.2-0.6 μm and a doping concentration of more than 5 x 1016/cm3。
4. The novel gallium arsenide solar cell as claimed in claim 1 wherein said first tunnel junction is N++GaAs/ P++GaAs；
Wherein N is++The thickness of GaAs is 10-30 nm, and P++The thickness of GaAs is 10-30 nm;
the dopant of the N-type material is one or the combination of Te, Se and Si with the doping concentration of 3 multiplied by 1018～3×1019/cm3；
The dopant of the P-type material is one or the combination of more of Mg, Zn and C, and the doping concentration requires 2 x 1019～8×1019/cm3。
5. The novel GaAs solar cell of claim 1, wherein the first DBR layer comprises 20-40 pairs of AlGaAs/GaAs structures, the thickness of the AlGaAs layer and the GaAs layer in each pair of AlGaAs/GaAs structures is calculated according to λ/4n, wherein λ is 850nm or less and 920nm or less, and n is the refractive index of the corresponding AlGaAs or GaAs material; the Al mole component in the AlGaAs is 50-90%.
6. The novel GaAs solar cell of claim 1, wherein in the middle cell, the AlGaAs back electric field has a thickness of 0.05-0.1 μm, the total thickness of the base region and the emitter region is 1.5-2.5 μm, the AlInGaAs graded emitter region has a thickness of 0.1-0.2 μm, and the GaInP window layer has a thickness of 0.05-0.15 μm; the thickness of the AlInGaAs sectional type gradient structure is 0.6-1.7 mu m, and the thickness of the InGaAs base region is at least 1 mu m.
7. The novel gallium arsenide solar cell as claimed in claim 1 wherein said second tunnel junction is n++GaInP/p++AlGaAs; wherein n is++The thickness of GaInP is 10-30 nm, p++The thickness of AlGaAs is 10-30 nm; the dopant of the N-type material is one or the combination of Te, Se and Si with the doping concentration of 3 multiplied by 1018～3×1019/cm3(ii) a The dopant of the P-type material is one or the combination of more of Mg, Zn and C, and the doping concentration requires 2 x 1019～8×1019/cm3。
8. The novel GaAs solar cell of claim 1, wherein the second DBR layer comprises 10-20 pairs of AlInP/GaInP structures, the thickness of the AlInP layer and the GaInP layer in each pair of AlInP/GaInP structures is calculated according to λ/4n, wherein λ is larger than or equal to 620nm and smaller than or equal to 690nm, and n is the refractive index of the corresponding AlInP or GaInP material.
9. The novel GaAs solar cell of claim 1, wherein in the top cell, the AlGaInP back electric field has a thickness of 0.02-0.05 μm, the total thickness of the base region and the emitter region is 0.6-1.2 μm, and the thickness of the AlInP window layer is 0.02-0.05 μm; the thickness of the AlGaInP sectional type gradient structure is 0.2-0.8 mu m, and meanwhile, the thickness of the GaInP base region is required to be at least 0.4 mu m.
10. A method for preparing a novel gallium arsenide solar cell, wherein the solar cell is as claimed in any one of claims 1 to 9, comprising the following steps:
providing a P-type Ge substrate;
passing PH on the P-type Ge substrate3Diffusing to form an N-Ge emitting region, and then growing a GaInP nucleating layer which is simultaneously used as a window layer of the bottom cell;
epitaxially growing a GaAs buffer layer, a first tunneling junction, a first DBR layer, a middle battery, a second tunneling junction, a second DBR layer, a top battery and a cap layer on the bottom battery in sequence;
the middle battery sequentially comprises an AlGaAs back electric field, an InGaAs base region, an AlInGaAs gradient emitter region and a GaInP window layer along the growth direction, and the AlInGaAs gradient base region and the AlInGaAs gradient emitter region form an AlInGaAs sectional gradient structure;
in the AlInGaAs sectional type gradient structure, the Al component y1：
Figure 446679DEST_PATH_IMAGE001
Wherein, y1Is formed along the middle cell back electric field direction x at the GaInP window layer1Al component of (d)1Is the sum of the thicknesses of the base region and the emitter region of the middle cell, and is AlxIs an initial value of Al component of the AlInGaAs material, and the range is 70% -90%; an In component of 0.01 and a Ga component of 0.99-y1；
The top battery sequentially comprises an AlGaInP back electric field, a GaInP base region, an AlGaInP gradient emitting region and an AlInP window layer along the growth direction, and the AlGaInP gradient base region and the AlGaInP gradient emitting region form an AlGaInP sectional gradient structure;
al component y in the AlGaInP sectional type gradient structure2：
Figure 745942DEST_PATH_IMAGE002
Wherein, y2Is formed by the AlInP window layer along the direction x of the back electric field of the top cell2Al component of (d)2The sum of the thicknesses of the base region and the emitter region of the top cell; an In component of 0.5 and a Ga component of 0.5-y2。
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