CN114335040A - Detection and display integrated hybrid photoelectric detector - Google Patents

Abstract

The invention relates to a detection and display integrated hybrid photoelectric detector, which comprises a color filter, a cathode optical fiber optical window, a vacuum cathode, an annular high-voltage power supply module, an integrated anode and a shell, wherein the color filter is arranged in front of the cathode optical fiber optical window, the cathode optical fiber optical window is positioned between the vacuum cathode and the color filter, the annular high-voltage power supply module is arranged at the periphery of the hybrid photoelectric detector, and the vacuum cathode and a photosensitive surface of the integrated anode are sealed in a vacuum cavity. The advantages are that: the invention provides a novel hybrid detector which combines the advantages of high gain and high sensitivity of a vacuum device and the advantages of small volume and digitalization of a solid device and integrates the advantages of high gain and high sensitivity of the vacuum device aiming at the defects of large volume, single imaging color, incapability of digitalization and the like of the traditional direct-view type low-light-level detector, and forms a novel hybrid photoelectric detector with integrated detection and display functions. Can be widely applied to the field of low-light night vision.

Description

Detection and display integrated hybrid photoelectric detector

Technical Field

The invention relates to a hybrid photoelectric detector integrating detection and display, belonging to the technical field of photoelectric detection imaging.

Background

At present, the conventional direct-view detector generally adopts a vacuum device, namely a low-light-level image intensifier, particularly in the field of low-light-level night vision, and has the characteristics of a common vacuum device, such as high detection sensitivity, quick response, low power consumption and the like. However, as a vacuum direct-view type detection device, the defect is obvious, the digitization of the image cannot be realized, a digital image processing algorithm cannot be added, and the functions of image information sharing and the like cannot be realized even if the target image is optimized. However, the general solid detector cannot meet the application environment with the illumination lower than 10-4lux in the low-illumination imaging performance, the shortest exposure time is from microseconds to tens of microseconds, and the application requirement of the imaging field of quick response cannot be met. Meanwhile, the photoelectric equipment integrating the detection and display functions is basically separated in functional modules of detection, display and the like, and is large in size and power consumption.

Disclosure of Invention

The invention provides a detection and display integrated hybrid photoelectric detector, aiming at overcoming the defects of large volume, single imaging color, incapability of digitalization and the like of the traditional direct-view type low-light-level detection device, and discloses a method for packaging a novel hybrid photoelectric detection device (electron bombardment active pixel) and an integrated anode in a small structural body by using an SIP technology, converting an optical signal by using a vacuum cathode to complete an electron multiplication process, digitalizing the electrical signal by using a solid CMOS (complementary metal oxide semiconductor), processing the image processing and interface conversion process of a circuit, and finally realizing a direct-view image in an OLED (organic light emitting diode). The functions from object detection, image processing to image display that can be directly observed can be realized. The high-sensitivity, quick-response and low-power-consumption vacuum device has the characteristics of high sensitivity, quick response and low power consumption of a vacuum device, has the advantages of small volume, compactness and digitization of a solid device, can be applied to portable night vision equipment, and can be integrated with detection systems such as vehicles and aircrafts.

The technical solution of the invention is as follows: a detection and display integrated hybrid photoelectric detector comprises a color filter 100, a cathode optical fiber optical window 200, a vacuum cathode 300, an annular high-voltage power supply module 400, an integrated anode 500 and a shell, wherein the color filter 100 is arranged in front of the cathode optical fiber optical window 200, the cathode optical fiber optical window 200 is positioned between the vacuum cathode 300 and the color filter 100, the annular high-voltage power supply module 400 is arranged at the periphery of the hybrid photoelectric detector, and the vacuum cathode 300 and the photosensitive surface of the integrated anode 500 are sealed in a vacuum cavity together; the integrated anode 500 comprises an image processor 501, a storage IC502, a passive device 503, a display driving IC504, an OLED505 and a semiconductor CMOS sensor 506, wherein the integrated device and the passive device in the integrated anode 500 are electrically interconnected on a packaging substrate through SIP technology, and finally packaged in a shell to form a multi-chip microsystem.

The color filter 100 is a band pass filter with red, green and blue bands, is plated on the cathode optical fiber light window 200 in the form of a layer of micron thick film, and meets the Bayer color array format.

The diameter of the optical fiber of the cathode optical fiber window 200 is 9 micrometers, and the pixel positions of the CMOS sensor which receives the electronic image at the rear end correspond to the pixel positions of the cathode one by one.

The vacuum cathode 300 uses GaAs as a cathode material.

The annular high-voltage power supply module 400 is used for providing high voltage required by electron acceleration of a photoelectric cathode of a vacuum photoelectric detection part and a vacuum cavity, and the input range of the annular power supply is low voltage ranging from 2.7V to 30V.

In the integrated anode 500, the output end of a driving signal and image data of the image processor 501 is connected with the input end of a driving signal and image data of the OLED505, the output ends of configuration parameters of the OLED505 and the semiconductor CMOS sensor 506 are connected with the input end of the configuration parameters of the storage IC502, the passive device 503 builds a peripheral circuit, and the display driving IC504 drives and conditions the input signal of the OLED 505.

The image processor 501 supports an image output interface of the sensor, can realize digital signal receiving, image preprocessing and automatic algorithm functions, and has an output frame rate not lower than 25 fps.

The semiconductor CMOS sensor 506 selects an electron bombardment type image sensor, the output resolution is not lower than 800 x 600, and a universal output interface is convenient for receiving and processing by a processing circuit.

The working method comprises the following steps:

s10, coating a cathode optical fiber light window, and coating a uniform color filter film on the surface of the cathode optical fiber light window, wherein the thickness of the color filter film is less than 20 um;

s20, preparing and providing a photocathode, and adsorbing a cathode material on the back of an input cathode optical window under a vacuum condition so as to complete a vacuum sealing process with an anode;

s30, registering the optical fiber window and the CMOS pixel array, wherein the registering and coupling process is carried out in a precise mechanical adjusting system to keep the optical fiber window and the CMOS photosensitive surface pixel array consistent, and the relative position of the optical fiber window and the CMOS photosensitive surface pixel array is fixed by adopting a coupling process;

s30, preparing an annular high-voltage power supply module, assembling a flexible circuit board in an annular shell, encapsulating the shell by using silica gel, and assembling a power supply at the periphery of the integrated vacuum cathode to realize negative high-voltage power supply of the cathode;

s40, manufacturing an integrated anode, interconnecting and packaging bare chips realizing various functions by an SIP technology, wherein the interconnecting mode comprises bonding, inversion, mounting and vertical perforation, and finally reserving an anode photosensitive surface and a digital image output interface, so that vacuum sealing and system-level packaging with a cathode can be conveniently completed;

s50, vacuum sealing the integrated anode and the cathode, wherein the vacuum sealing ensures the cleanness of the photosensitive surface of the CMOS sensor in the integrated anode, the cathode is covered on the photosensitive surface of the anode, and the butt joint and sealing of the anode and the cathode are realized through an indium sealing process;

s60, encapsulating the annular high-voltage power supply module with the detector, and sleeving the annular high-voltage power supply around the cathode; and finishing negative high-voltage power supply of the cathode, placing the cathode and the annular power supply in a filling and sealing mould, and filling and sealing by using double-component silicon rubber.

The invention has the beneficial effects that:

1) a system-in-package (SIP) technology is utilized to integrate the photoelectric detection system based on the EBCMOS framework and the reading and displaying integrated anode circuit system into a small-sized packaging structure, so that the vacuum device has the characteristics of high sensitivity, quick response and low power consumption, and also has the characteristics of miniaturization, high spatial resolution and digitization of a solid CMOS device, and the detection of a target and the realization of a color night vision function in a low-illumination environment are realized;

2) the high-performance vacuum device has the advantages of being good in performance of a vacuum device in low-illumination detection, easy to digitize a solid device in image processing and image information sharing, and important in application value in the fields of low-light night vision, night auxiliary driving, laser radar and the like.

Drawings

FIG. 1 is a flow chart of a hybrid photodetector with integrated detection and display.

FIG. 2 is a system composition diagram of the present invention.

Figure 3 is an integrated anode configuration.

In the figure 100 is a color filter; 200 is a fiber optic window; 300 is a vacuum cathode; 400 is an annular high voltage power supply module; 500 is an integral anode. 501, an image processor; 502 is a memory IC; 503 is a passive device; 504 is a display driver IC; 505 is an OLED.

Detailed Description

A detection and display integrated detector based on SIP technology and combined with a novel hybrid photoelectric detector and a miniaturized image processing and micro OLED display framework. The device adopts an electron bombardment type active pixel (EBAPS) sensor framework, consists of a micro detection and display integrated anode and a vacuum detector, and has the imaging principle that a target optical image forms an electronic image after passing through a color filter and is emitted to an electron induction CMOS sensor to generate a digital color image, and finally the digital color image is displayed by a micro OLED. The micro-optical device is characterized by smaller volume than the traditional direct-viewing type micro-optical device and has the functions of color and direct viewing.

A detection and display integrated hybrid photoelectric detector mainly comprises a color filter, a cathode input optical fiber optical window, an annular high-voltage power supply module, a vacuum photocathode, an electron bombardment type solid CMOS device for removing the input optical window, a readout and display integrated anode and a shell packaging structure, wherein the color filter is used for filtering background interference light outside red, green and blue visible wave bands, particularly near infrared wave bands, improving the signal-to-noise ratio, and simultaneously arranging input light according to a Bayer image array; the optical fiber optical window has the function of ensuring that input light passing through the color filter corresponds to a pixel array of the CMOS device in a Bayer array format so as to accord with the color interpolation algorithm processing of a subsequent circuit; the high-voltage annular power supply module is used for applying driving voltage to the integrated vacuum cathode, and comprises cathode negative voltage and electron acceleration field voltage; the vacuum photocathode is used for completing photoelectric conversion and electron acceleration processes, and high-energy electrons bombard a CMOS (complementary metal oxide semiconductor) device at the rear end after optical signals are converted into electrons; the electron bombardment type solid CMOS device for removing the input optical window has the functions of receiving accelerated high-energy electrons to complete an electron bombardment gain process, and realizing digital output of electric signals so as to facilitate reading and processing; the reading and displaying integrated anode is used for finishing the functions of digital image signal reading and processing, OLED screen display driving and target image display.

The technical scheme of the invention is further explained by combining the attached drawings

Referring to fig. 1, the implementation steps of each module of a hybrid photodetector integrating detection and display are as follows:

s10, coating a cathode input light window, wherein the process needs to coat a uniform color filter film on the surface of the light window, and the thickness is below 20 um;

s20, preparing and providing a photocathode, wherein the photocathode preparation needs to complete the adsorption process of a cathode material on the back surface of an input cathode light window under a vacuum condition so as to complete a vacuum sealing process with an anode;

and S30, registering the optical fiber window and the CMOS pixel array, wherein the registration coupling process needs to keep the optical fiber window and the CMOS photosensitive surface pixel array consistent in a precise mechanical adjusting system, and the relative position of the optical fiber window and the CMOS photosensitive surface pixel array is fixed by adopting a coupling process.

And S30, preparing an annular high-voltage power supply module, wherein the high-voltage power supply is prepared by assembling the flexible circuit board in an annular shell, encapsulating the shell by using silica gel, and assembling a power supply at the periphery of the integrated vacuum cathode to realize negative high-voltage power supply of the cathode.

And S40, manufacturing an integrated anode, wherein the integrated anode is manufactured by interconnecting and packaging bare chips realizing various functions by an SIP technology, and the interconnection modes of bonding, inversion, surface mounting, vertical perforation and the like are adopted, so that an anode photosensitive surface and a digital image output interface are finally reserved, and the vacuum sealing system-in-package with a cathode is conveniently completed.

And S50, vacuum sealing the integrated anode and the cathode, wherein the vacuum sealing needs to ensure the cleanness of the CMOS photosurface in the integrated anode, the cathode is covered on the photosensitive surface of the anode, and the butt joint sealing of the anode and the cathode is realized through an indium sealing process.

And S60, encapsulating the annular high-voltage power supply module with the detector, sleeving the annular high-voltage power supply around the cathode to finish negative high-voltage power supply of the cathode, placing the cathode and the annular power supply in an encapsulating mold, and encapsulating by using double-component silicon rubber.

As shown in fig. 2 to 3, a hybrid photodetector with integrated detection and display includes: the device comprises a color filter 100, an optical fiber window 200, a vacuum cathode 300, an annular high-voltage power supply module 400 and an integrated anode 500.

The color filter 100 employs a band-pass filter, which can filter other interference light except red, green, and blue bands, for increasing signal-to-noise ratio and false color imaging.

The optical fiber window 200 is used for optical transmission, the diameter of the optical fiber is consistent with the diameter of a pixel, the optical fiber corresponds to the pixel of a photosensitive surface pixel array of a semiconductor CMOS device 506, cathode input light is imaged on an integrated anode photosensitive array in a color Bayer array format, and a color image interpolation algorithm is conveniently realized.

The vacuum cathode 300 is used for detecting visible light signals, realizing photoelectric conversion and electron acceleration, and adopts a GaAs cathode used by a three-generation image intensifier. The cathode material is uniformly prepared on the cathode optical fiber light window through a cathode manufacturing process, and the cathode sensitivity is more than 1500 uA/lm.

The annular high-voltage power supply module 400 is positioned at the periphery of the integrated vacuum cathode cavity and used for providing a path of negative pressure for electron acceleration for the vacuum cathode 300, and the pressure difference between the cathode and the integrated anode is more than-2000V; the height is in the range of 3-5 mm.

The semiconductor CMOS device 506 in the integrated anode 500 is used for receiving high-speed electrons and interacting with the high-speed electrons to realize a high-gain process of photoelectric conversion, and simultaneously realize digital output of detection information.

The image processor 501 in the integrated anode 500 supports a general digital image interface input, and is used for reading out image data of the semiconductor CMOS device 506, performing a series of digital image processing processes on the image data, including color interpolation, image enhancement, denoising, automatic exposure adjustment, and the like, and simultaneously implementing OLED driving and display functions.

Claims (9)

1. A detection and display integrated hybrid photoelectric detector is characterized by comprising a color filter 100, a cathode optical fiber optical window 200, a vacuum cathode 300, an annular high-voltage power supply module 400, an integrated anode 500 and a shell, wherein the color filter 100 is arranged in front of the cathode optical fiber optical window 200, the cathode optical fiber optical window 200 is positioned between the vacuum cathode 300 and the color filter 100, the annular high-voltage power supply module 400 is arranged at the periphery of the hybrid photoelectric detector, and the vacuum cathode 300 and the photosensitive surface of the integrated anode 500 are sealed in a vacuum cavity together; the integrated anode 500 comprises an image processor 501, a storage IC502, a passive device 503, a display driving IC504, an OLED505 and a semiconductor CMOS sensor 506, wherein the integrated device and the passive device in the integrated anode 500 are electrically interconnected on a packaging substrate through SIP technology, and finally packaged in a shell to form a multi-chip microsystem.

2. The integrated detecting and displaying hybrid photoelectric detector as claimed in claim 1, wherein the color filter 100 is a band pass filter with red, green and blue wavelength bands, and is coated on the cathode optical fiber window 200 in the form of a micron thick film, and meets the Bayer color array format.

3. A detecting and displaying integrated hybrid photodetector as claimed in claim 1, wherein the diameter of the optical fiber of the cathode optical fiber window 200 is 9 μm, which satisfies the one-to-one correspondence between the pixel positions of the CMOS sensor and the cathode pixel positions of the rear-end receiving electronic image.

4. A detecting and displaying integrated hybrid photoelectric detector according to claim 1, wherein the vacuum cathode 300 uses GaAs as a cathode material.

5. The integrated detecting and displaying hybrid photoelectric detector as claimed in claim 1, wherein said ring-shaped high voltage power supply module 400 is used for providing high voltage required for electron acceleration of the vacuum photoelectric detecting portion photocathode and vacuum chamber, and the ring-shaped power supply has a low voltage ranging from 2.7V to 30V.

6. The hybrid photodetector as claimed in claim 1, wherein in the integrated anode 500, the driving signal and image data output terminal of the image processor 501 is connected to the driving signal and image data input terminal of the OLED505, the configuration parameter output terminals of the OLED505 and the semiconductor CMOS sensor 506 are connected to the configuration parameter input terminal of the memory IC502, the passive device 503 builds a peripheral circuit, and the display driving IC504 is used for driving and conditioning the input signal of the OLED 505.

7. The integrated detecting and displaying hybrid photoelectric detector of claim 1, wherein the semiconductor CMOS sensor 506 is an electron bombardment type image sensor with an output resolution of not less than 800 x 600, and a general purpose output interface for easy reception and processing by a processing circuit.

8. A detection and display integrated hybrid photodetector as claimed in claim 1, wherein said image processor 501 supports the image output interface of the sensor, and can implement digital signal reception, image preprocessing, and automatic algorithm functions, and the output frame rate is not lower than 25 fps.

9. The method of claim 1, wherein the method comprises the following steps:

s10, coating a cathode optical fiber light window, and coating a uniform color filter film on the surface of the cathode optical fiber light window, wherein the thickness of the color filter film is less than 20 um;

s20, preparing and providing a photocathode, and adsorbing a cathode material on the back of an input cathode optical window under a vacuum condition so as to complete a vacuum sealing process with an anode;

s30, registering the optical fiber window and the pixel array of the semiconductor CMOS sensor, wherein the registering and coupling process is carried out in a precise mechanical adjusting system to keep the optical fiber window and the pixel array of the photosensitive surface of the semiconductor CMOS sensor consistent, and the relative position of the optical fiber window and the pixel array of the photosensitive surface of the semiconductor CMOS sensor is fixed by adopting a coupling process;

s30, preparing an annular high-voltage power supply module, assembling a flexible circuit board in an annular shell, encapsulating the shell by using silicon rubber, and assembling a power supply at the periphery of the integrated vacuum cathode to realize negative high-voltage power supply of the cathode;

s40, manufacturing an integrated anode, interconnecting and packaging bare chips realizing various functions by an SIP technology, wherein the interconnecting mode comprises bonding, inversion, mounting and vertical perforation, and finally reserving an anode photosensitive surface and a digital image output interface, so that vacuum sealing and system-level packaging with a cathode can be conveniently completed;

s50, vacuum sealing the integrated anode and the cathode, wherein the vacuum sealing ensures the cleanness of the photosensitive surface of the semiconductor CMOS sensor in the integrated anode, the cathode is covered on the photosensitive surface of the anode, and the butt joint and sealing of the anode and the cathode are realized through an indium sealing process;

s60, encapsulating the annular high-voltage power supply module and the detector, and sleeving the annular high-voltage power supply module on the periphery of the cathode; and finishing negative high-voltage power supply of the cathode, placing the cathode and the annular power supply in a filling and sealing mould, and filling and sealing by using double-component silicon rubber.

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