CN111883549B - Color electron bombardment image sensing device - Google Patents
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Abstract
The invention discloses a color electron bombardment image sensing device, which comprises a color filtering film, an input light window, a photocathode, a back-illuminated CMOS image sensor, a multilayer ceramic tube body and a PGA pin grid array, wherein the color filtering film is used for realizing light splitting of three colors of red, green and blue of an optical signal so as to obtain three primary colors of light; the photocathode is used for realizing photoelectric conversion of the three primary colors of light; the back-illuminated CMOS image sensor is used as a photoelectron receiving electrode and is fixed in the multilayer ceramic tube body in a gold-tin or other welding flux sintering mode; the multilayer ceramic tube body interconnects the multi-path signal pins of the CMOS image sensor with an external PGA pin grid array and ensures the sealing of the sensing device. The invention organically combines the vacuum device and the semiconductor device, can realize high-resolution color night vision imaging under extremely low illumination, and has the advantages of large detection photosensitive area, high response speed, high imaging resolution, full digital output, small device volume and the like.
Description
Technical Field
The invention relates to the field of photoelectric detection, in particular to a color electron bombardment image sensing device.
Background
The field of photoelectric detection has become a key technical field for vigorous development of various countries at present by virtue of wide application prospects and huge strategic values. Among various photoelectric detectors, the vacuum-semiconductor hybrid photoelectric detector is a novel photoelectric detector developed in the 90 s of the 20 th century, integrates the advantages of a vacuum photoelectric device and a semiconductor photoelectric device, simultaneously makes up the defects of the latter two photoelectric devices, and is widely applied to the fields of low-light-level night vision, high-energy physics, biological detection, laser radar, astronomical observation and the like.
The whole tube structure of the vacuum-semiconductor mixed type photoelectric detector adopts a metal-ceramic structure similar to a vacuum photoelectric device, the cathode adopts a photoelectric cathode of the vacuum device, the anode adopts a semiconductor detector, photoelectrons generated on the photoelectric cathode bombard the surface of a semiconductor material after being accelerated during working to generate photoelectron gain of hundreds to thousands of times, and electron-hole pairs generated by bombardment are collected by a junction area of the semiconductor detector to realize signal output. Therefore, the hybrid photoelectric detector has the advantages of large photosensitive area, high sensitivity, high response speed, low noise, high gain of the vacuum device, high imaging resolution of the semiconductor device, large dynamic range, low power consumption and the like.
At present, the mixed type photoelectric detection devices at home and abroad generally have the problems of only carrying out black-and-white imaging detection and the like, and particularly in the field of low-light night vision under the condition of low illumination, if color detection imaging is required, pseudo-color imaging detection can be realized only by coloring images obtained by detection at a later stage, and real color imaging detection at a device level cannot be realized at all. Like the latest ISIE 11 EBAPS hybrid photodetector developed by Intevac corporation, USA, only can perform black-and-white monochromatic detection imaging.
Disclosure of Invention
The invention aims to provide a color electron bombardment image sensing device which has high detection sensitivity, large detection photosensitive area, high imaging resolution, full digital output and small size and volume and can carry out real color detection imaging under the condition of low illumination.
The technical solution for realizing the purpose of the invention is as follows: a color electron bombardment image sensor comprises a color filter film, an input light window, a photoelectric cathode, a back-illuminated CMOS image sensor, a multilayer ceramic tube body and a PGA pin grid array;
the color filtering film is vapor-plated on the upper surface of the input light window, and the photocathode is manufactured on the lower surface of the input light window; the color filter film is used for realizing light splitting of three colors of red, green and blue of an optical signal so as to obtain light of three primary colors; the photocathode is used for realizing photoelectric conversion of the three primary colors of light; the back-illuminated CMOS image sensor is used as a photoelectron receiving electrode and is fixed in the multilayer ceramic tube body;
the multilayer ceramic tube body interconnects multi-channel signal pins of the back-illuminated CMOS image sensor with an external PGA pin grid array and ensures the sealing of a sensing device;
the distance between the photoelectric cathode and the back-illuminated CMOS image sensor is controlled by the multilayer ceramic tube body and insulation is realized; the back-illuminated CMOS image sensor is used for receiving photoelectrons converted from three primary colors, the photoelectrons are accelerated by a high-voltage electric field to realize multiplication and amplification of signals, and finally the signals are restored into color image signals and then output.
Compared with the prior art, the invention has the following remarkable advantages: the color electron bombardment image sensor adopts a red, green and blue three-layer color filter film system which is evaporated on the upper surface of an input light window so as to obtain three primary colors of light; the device adopts the traditional multi-alkali photocathode or GaAs photocathode material as the photoelectric conversion material, is completely compatible with the preparation process of the traditional vacuum photoelectric device, can replace other waveband-responsive photocathode materials, and has high universality; the back-illuminated CMOS image sensor used as a receiving electrode is a back-illuminated CMOS image sensor with a coated surface, electron bombardment gain with high power and low excess noise factor can be generated on the surface of the back-illuminated CMOS image sensor through accelerated photoelectron bombardment, effective amplification of incident signals is realized, the back-illuminated CMOS image sensor can be directly assembled on a multilayer ceramic shell, complex processes such as back thinning and the like of the traditional front-illuminated CMOS image sensor can be avoided, and the working stability of a device can be further improved through the coated surface; the device base adopts a PGA array or other high temperature/low temperature co-fired multilayer ceramic tube body to realize the interconnection with the multi-path signal pins of the CMOS image sensor, and the assembly size of the device is greatly reduced while the signal extraction is finished. Therefore, the color electron bombardment image sensing device has the advantages of high detection sensitivity, large detection photosensitive area, high imaging resolution, full digital output, small size and volume, capability of performing real color detection imaging under the condition of low illumination, simple processing, convenient assembly, low cost and high reliability.
Drawings
FIG. 1 is a schematic diagram of a color electron bombardment image sensor according to the present invention.
Detailed Description
As shown in fig. 1, a color electron bombardment image sensor comprises a color filter film 1, an input light window 2, a photocathode 3, a back-illuminated CMOS image sensor 5, a multilayer ceramic tube 4 and a PGA pin grid array 9;
the color filter film 1 is evaporated on the upper surface of the input light window 2, and the photocathode 3 is manufactured on the lower surface of the input light window 2; the color filter film 1 is used for realizing light splitting of three colors of red, green and blue of an optical signal so as to obtain light of three primary colors; the photocathode 3 is used for realizing photoelectric conversion of three primary colors of light; the back-illuminated CMOS image sensor 5 is used as a photoelectron receiving electrode and is fixed in the multilayer ceramic tube body 4;
the multilayer ceramic tube body 4 interconnects multi-channel signal pins of the back-illuminated CMOS image sensor 5 with an external PGA pin grid array 9 and ensures the sealing of a sensing device;
the distance between the photocathode 3 and the back-illuminated CMOS image sensor 5 is controlled by the multilayer ceramic tube body 4 and insulation is realized; the back-illuminated CMOS image sensor 5 is used for receiving photoelectrons converted from three primary colors, and the photoelectrons are accelerated by a high-voltage electric field to realize multiplication and amplification of signals and finally restored into color image signals and then output.
Furthermore, the color filter film 1 adopts a red, green and blue three-layer color filter film system, is evaporated on the upper surface of the input light window 2 in an optical coating mode, and is an arrayed periodic arrangement structure with the unit size of 5-30 μm.
Further, the photocathode 3 adopts a multi-alkali photocathode or a GaAs photocathode for realizing photoelectric conversion of red, green and blue primary color light, is manufactured on the lower surface of the input light window, and applies a negative high voltage of 1000-10000 volts during working.
Further, the back-illuminated CMOS image sensor 5 is a CMOS image sensor subjected to surface coating processing.
Further, the back-illuminated CMOS image sensor 5 is fixed in the multilayer ceramic tube 4 by sintering gold tin or other solder.
Further, the multilayer ceramic tube 4 is a high-temperature or low-temperature co-fired multilayer ceramic tube and is output by a PGA pin grid array.
Further, the input light window 2 and the multilayer ceramic shell 4 are sealed and connected through indium or indium tin solder.
Further, the electrodes of the back-illuminated CMOS image sensor 5 connect the gold wires 6 to the corresponding pad pads 8 of the multilayer ceramic case 4 by ultrasonic bonding.
The color electron bombardment image sensor organically combines a vacuum device and a semiconductor device, can realize high-resolution color night vision imaging under extremely low illumination, and has the advantages of large detection photosensitive area, high response speed, high imaging resolution, full digital output, small device volume and the like.
The technical scheme of the invention is explained in detail by combining the drawings and the embodiment as follows:
examples
As shown in fig. 1, the color electron impact image sensor mainly comprises: the device comprises a color filter film 1, an input light window 2, a photocathode 3, a multilayer ceramic shell 4, a back-illuminated CMOS image sensor 5, a gold wire 6, a gold-tin solder 7, a bonding pad 8 and a PGA pin grid array 9, wherein all the parts are sealed by solder or in other welding modes to meet the requirement of vacuum degree.
The red, green and blue light after being filtered by the color filter film 1 is converted into photoelectrons by the photocathode 3, and the photoelectrons bombard on the back-illuminated CMOS image sensor 5 after being accelerated by an electric field. The color filter film 1 is evaporated on the upper surface of the input light window 2, the photoelectric cathode 3 is manufactured on the lower surface of the input light window 2, the insulativity of the photoelectric cathode 3 and the back-illuminated CMOS image sensor 5 is realized through the multilayer ceramic shell 4, and the input light window 2 and the multilayer ceramic shell 4 are sealed and connected through indium or indium tin solder to realize sealing connection. The color filter film 1 adopts a red, green and blue three-layer color filter film system, is evaporated on the upper surface of an input light window in an optical film coating mode, is an arrayed periodic arrangement structure with the unit size of 5-30 mu m, and is used for filtering an incident light signal into a red, green and blue three-primary-color light signal when an external incident light signal irradiates on the color filter film in work. The photocathode 3 adopts a multi-alkali photocathode or a GaAs photocathode which can respond to red light, green light and blue light and converts the three primary colors of light into photoelectrons. The distance between the photocathode 3 and the back-illuminated CMOS image sensor 5 is controlled by adjusting the distance between the input light window 2 and the bottom of the multilayer ceramic shell 4. The anode receiving electrode adopts a back-illuminated CMOS image sensor 5, the chip is fixed in the multilayer ceramic shell 4 in a gold-tin solder 7 or other solder sintering mode after being processed by a surface coating process, and the gold wire 6 is connected to a corresponding base bonding pad 8 of the multilayer ceramic shell 4 by the electrode of the back-illuminated CMOS image sensor 5 in an ultrasonic or other bonding mode. The distribution of the pads 8 is determined by the electrode position distribution of the back-illuminated CMOS image sensor 5. The multilayer ceramic shell 4 adopts a high-temperature/low-temperature co-fired multilayer ceramic tube body, and the interconnection of the electrode of the back-illuminated CMOS image sensor 5 and the pin of the PGA pin grid array 9 is realized through internal wiring. When the photoelectric detector works, negative high voltage of 1000-10000V is applied to the photoelectric cathode, photoelectron signals of three primary colors of light generated by conversion of the photoelectric cathode 3 are accelerated by a high-voltage electric field and then bombarded on the surface of the back-illuminated CMOS image sensor 5, hundreds and even thousands of pairs of electron-hole pairs can be generated in a silicon material body after bombardment of one incident light electron and are collected by the back-illuminated CMOS image sensor 5, so that multiplication and amplification of the light signals of three paths of red, green and blue are realized, the light signals are recovered into a real color image through a red, green and blue RGB algorithm, and finally color detection imaging is realized. The color image signal generated by the back-illuminated CMOS image sensor 5 is output through the PGA pin grid array 9 and color, high-sensitivity, high-resolution imaging is performed.
Claims (8)
1. A color electron bombardment image sensor is characterized by comprising a color filtering film (1), an input light window (2), a photoelectric cathode (3), a back-illuminated CMOS image sensor (5), a multilayer ceramic tube body (4) and a PGA pin grid array (9);
the color filter film (1) is evaporated on the upper surface of the input light window (2), and the photocathode (3) is manufactured on the lower surface of the input light window (2); the color filter film (1) is used for realizing light splitting of three colors of red, green and blue of an optical signal so as to obtain light of three primary colors; the photocathode (3) is used for realizing photoelectric conversion of three primary colors of light; the back-illuminated CMOS image sensor (5) is used as a photoelectron receiving electrode and is fixed in the multilayer ceramic tube body (4);
the multilayer ceramic tube body (4) interconnects multi-path signal pins of the back-illuminated CMOS image sensor (5) with an external PGA pin grid array (9) and ensures the sealing of a sensing device;
the distance between the photoelectric cathode (3) and the back-illuminated CMOS image sensor (5) is controlled by the multilayer ceramic tube body (4) and insulation is realized; the back-illuminated CMOS image sensor (5) is used for receiving photoelectrons converted from three primary colors, and the photoelectrons are accelerated by a high-voltage electric field to realize multiplication and amplification of signals and finally restored into color image signals to be output.
2. The color electron impact image sensor device of claim 1, wherein: the color filter film (1) adopts a red, green and blue three-layer color filter film system, is evaporated on the upper surface of the input light window (2) in an optical coating mode, and is an arrayed periodic arrangement structure with the unit size of 5-30 mu m.
3. The color electron impact image sensor device of claim 1, wherein: the photoelectric cathode (3) adopts a multi-alkali photoelectric cathode or a GaAs photoelectric cathode, is used for realizing photoelectric conversion of red, green and blue primary color light, is manufactured on the lower surface of the input light window, and applies a negative high voltage of 1000-10000V during working.
4. The color electron impact image sensor device of claim 1, wherein: the back-illuminated CMOS image sensor (5) is a CMOS image sensor subjected to surface coating processing.
5. The color electron impact image sensor device of claim 4, wherein: the back-illuminated CMOS image sensor (5) is fixed in the multilayer ceramic tube body (4) in a solder sintering mode.
6. The color electron impact image sensor device of claim 1, wherein: the multilayer ceramic tube body (4) adopts a high-temperature or low-temperature co-fired multilayer ceramic tube body and is output by adopting a PGA pin grid array.
7. The color electron impact image sensor device of claim 1, wherein: the input light window (2) and the multilayer ceramic tube body (4) are sealed and connected in a sealing mode through indium or indium tin solder.
8. The color electron impact image sensor device of claim 1, wherein: and the electrodes of the back-illuminated CMOS image sensor (5) connect the gold wires (6) to corresponding base pads (8) of the multilayer ceramic tube body (4) in an ultrasonic bonding mode.
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