CN114334793A - Printed glass passivation process - Google Patents
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- CN114334793A CN114334793A CN202111515964.6A CN202111515964A CN114334793A CN 114334793 A CN114334793 A CN 114334793A CN 202111515964 A CN202111515964 A CN 202111515964A CN 114334793 A CN114334793 A CN 114334793A
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Abstract
The invention discloses a passivation process method for printed glass, which comprises the following steps: 1) loading a silicon single crystal wafer in a printing area, covering a stainless steel printing plate on the surface of the silicon single crystal wafer, and positioning a central printing through groove of the stainless steel printing plate in the middle of the silicon single crystal wafer; 2) coating glass paste and blade coating, pouring the glass paste on a stainless steel printing plate, scraping the glass paste into the grooves of the silicon single crystal wafer along the diagonal direction of the chip by using a scraper, and repeating the step for 1-2 times to fill the grooves, wherein the scraper is made of resin, stainless steel, Teflon, rubber or polyurethane; 3) drying the glass paste, and putting the silicon single crystal wafer on a hot plate for drying; 4) loading the silicon single crystal wafer into a quartz boat; 5) and (4) sintering the glass. The glass slurry coating device can effectively prevent the silicon wafer from being damaged when the glass slurry coating is carried out on the silicon wafer.
Description
Technical Field
The invention relates to the technical field of wafer processing, in particular to a passivation process method for printed glass.
Background
The conventional glass passivation methods include glass passivation by a knife-scraping method and glass passivation by a light resistance method. The glass passivation by the knife-scraping method is that the prepared glass paste is scraped into a groove on the surface of a silicon single crystal by a stainless steel scraper, and glass sintering is completed at high temperature. The glass passivation technology by the knife-scraping method has the following defects: the defects of the grooves and other damages are caused, the reliability of the product is influenced, and the packaged finished product has 200-1000 ppm client-side failure; large losses are caused to customers;
the glass passivation process of the light resistance method comprises the steps of uniformly mixing and stirring photoresist and glass powder, coating the mixture on the surface of a groove, and carrying out exposure, development, fixation, film hardening, glass sintering and the like to realize the glass passivation of the groove, wherein the glass passivation process of the light resistance method has the following defects: a large amount of organic matters such as photoresist and the like are needed to prepare glass paste, and a large amount of organic matters such as developing solution, fixing solution and the like are consumed after exposure, so that the process time is long, and the production efficiency is low.
In the published document CN201811533932, a GPP chip overprinting screen printing plate and a process method thereof, in step S1, a layer of glass paste is directly coated on the grooves of the silicon wafer, so that the silicon wafer is easily scratched by a brush board or a scraper and the like during coating, and the silicon wafer is damaged.
Disclosure of Invention
In order to solve the problems, the invention discloses a passivation process method for printing glass, which can effectively prevent the silicon wafer from being damaged when glass slurry is coated on the silicon wafer.
The technical scheme of the invention is as follows: the passivation process method for the printed glass comprises the following steps:
step 1) loading, namely placing a stainless steel backing plate on a flat object surface, filling a gasket in a printing area, then placing a silicon single crystal wafer with a mesa corrosion groove, enabling one surface with a groove to face upwards, covering a stainless steel printing plate on the surface of the silicon single crystal wafer, enabling a central printing through groove of the stainless steel printing plate to be located in the middle of the silicon single crystal wafer, and aligning the center of the stainless steel backing plate, the center of the silicon single crystal wafer and the center of the stainless steel printing plate;
step 2) coating and scraping glass paste, pouring the glass paste on a stainless steel printing plate, scraping the glass paste into the groove of the silicon single crystal wafer along the diagonal direction of the chip by using a scraper, and repeating the step for 1-2 times to fill the groove, wherein the scraper is made of resin, stainless steel, Teflon, rubber or polyurethane;
step 3) drying the glass paste, namely drying the silicon single chip coated with the glass paste on a hot plate at the temperature of 150 ℃ for 5-25 s;
step 4), loading, namely sequentially loading the dried silicon single crystal wafers into a quartz boat;
and 5) sintering the glass, pushing the quartz boat into a glass sintering furnace, and starting a glass sintering procedure.
Further, the printing area in the step 1) is located at the opening part of the stainless steel backing plate, the printing area is matched with the shape of the silicon single crystal wafer and slightly larger than the diameter of the silicon single crystal wafer, the thickness of the stainless steel printing plate is 15-40 microns, the printing through groove area is matched with the silicon single crystal wafer, the diameter of the printing through groove area is slightly smaller than the silicon single crystal wafer, and the stainless steel printing plate just presses the silicon single crystal wafer.
Further, after the silicon single crystal wafer is placed in the printing area in the step 1), the surface of the silicon single crystal wafer exceeds the surface of the stainless steel cushion plate by 10-30um, and gaskets with different thicknesses are added in the printing area to meet the requirement that the surface of the final silicon single crystal wafer is higher than the surface of the stainless steel cushion plate by 10-30 um.
Further, in the step 2), the thickness of the silicon single crystal wafer is circular, the diameter is 3-6 inches, the thickness is 100-600um, one side or two sides of the silicon single crystal wafer are provided with grooves, the grooves comprise inner groove structures and outer groove structures, and the depth of the grooves is 20-150 um.
Further, a blade with the height of 3-20mm is arranged on one side of the scraper in the step 2), the blade is in the shape of a double sharp opening, an oblique opening or a right angle, the angles of the blade are 20-80 degrees, 20-80 degrees and 90 degrees respectively, the thickness of the scraper is 5-30mm, the length of the scraper is 1.1-1.6 times of the diameter of the silicon single crystal wafer, the hardness of the scraper is 50-90 degrees, and the length of the blade of the scraper is larger than the diameter of the printing through groove.
Further, the sintering process conditions in the step 5) are as follows: and (3) feeding the steel into the furnace at T =550 +/-15 ℃, heating for 60 +/-5 min, keeping the temperature at T =715 +/-10 ℃, keeping the temperature for T =15 +/-5 min, cooling for T =120 +/-10 min, and discharging the steel from the furnace when the temperature is reduced to T =550 +/-10 ℃.
The invention has the advantages that: 1. through stainless steel printing plate around the silicon single crystal piece in this application, the silicon single crystal piece is located the inboard that the groove was led to in the printing for stainless steel printing plate is higher than the height of silicon single crystal piece, and when the groove of silicon single crystal piece was scraped to the glass paste to the scraper, because the upper surface of stainless steel printing is higher than the silicon single crystal piece, so when scraping the glass paste to the inslot, can not damage the silicon single crystal piece.
2. This application is when the workman operates, directly scrapes the glass through the scraper and paste to the silicon single crystal piece on, need not worry about damaging the silicon single crystal piece, effectively improves the work efficiency of printing.
Drawings
FIGS. 1-6 are schematic structural views of the process structure of the present invention;
FIG. 7 is a schematic view showing the structure of a silicon single crystal wafer according to the present invention;
FIGS. 8-9 are schematic structural views of inner and outer trench structures in accordance with the present invention;
FIG. 10 is a schematic structural view of the present invention;
FIGS. 11-13 are schematic views of three embodiments of the present invention;
wherein: 1. stainless steel backing plate, 2, printing area, 3, silicon single crystal wafer, 4, groove, 5, stainless steel printing plate, 6, printing through groove, 7, glass paste, 8, scraper, 9 and hot plate.
Detailed Description
For the purpose of enhancing an understanding of the present invention, the following detailed description of the present invention is provided in conjunction with the accompanying drawings, which are provided for the purpose of illustration only and are not intended to limit the scope of the present invention.
As shown in the figures 1-13 of the drawings,
example 1
The passivation process method for the printed glass comprises the following steps:
step 1) loading, namely placing a stainless steel backing plate 1 on a flat object surface, filling a gasket in a printing area, then placing a silicon single crystal wafer 3 with a mesa corrosion groove, enabling one surface with a groove 4 to face upwards, covering a stainless steel printing plate 5 on the surface of the silicon single crystal wafer 3, enabling a central printing through groove 6 of the stainless steel printing plate 5 to be located in the middle of the silicon single crystal wafer 3, and simultaneously aligning the center of the stainless steel backing plate 1, the center of the silicon single crystal wafer 3 and the center of the stainless steel printing plate 5;
step 2), coating and blade-coating glass paste 7, pouring the glass paste 7 on a stainless steel printing plate 5, scraping the glass paste 7 into the groove 4 of the silicon single crystal wafer 3 along the diagonal direction of the chip by using a scraper 8, repeating the step 2 for filling the groove 4, wherein the scraper 8 is made of resin, stainless steel, Teflon, rubber or polyurethane;
step 3), drying the glass paste 7, namely putting the silicon single crystal wafer 3 coated with the glass paste 7 on a hot plate 9 for drying, wherein the temperature of the hot plate 9 is 150 ℃, and the drying time is 5 s;
step 4), loading, namely sequentially loading the dried silicon single crystal wafers 3 into a quartz boat;
and 5) sintering the glass, pushing the quartz boat into a glass sintering furnace, and starting a glass sintering procedure.
The printing area 2 is positioned at the hole opening part of the stainless steel backing plate 1 in the step 1), the printing area 2 is matched with the shape of the silicon single crystal 3 and is slightly larger than the diameter of the silicon single crystal 3, the thickness of the stainless steel printing plate 5 is 15 microns, the area of the printing through groove 6 is matched with the silicon single crystal 3, the diameter of the printing through groove is slightly smaller than the silicon single crystal 3, and the stainless steel printing plate 5 just presses the silicon single crystal 3.
Step 1) after the silicon single crystal wafer 3 is placed in the printing area 2, the surface of the silicon single crystal wafer 3 exceeds the surface of the stainless steel backing plate 1 by 10um, and the printing area 2 is padded with gaskets with different thicknesses to meet the requirement that the surface of the final silicon single crystal is higher than the surface of the stainless steel backing plate by 10 um.
The thickness of silicon single crystal piece 3 in step 2) is circular, and the diameter is 3 inches, and thickness is 100um, and one side or both sides of silicon single crystal piece 3 are equipped with slot 4, and slot 4 includes interior slot and outer slot structure, and the degree of depth of slot 4 is 20 um.
In the step 2), a cutting edge with the height of 3mm is arranged on one side of the scraper 8, the cutting edge is in a double-pointed shape, the angles of the cutting edge are respectively 20 degrees, the thickness of the scraper 8 is 5mm, the length of the scraper 8 is 1.1 time of the diameter of the silicon single chip, the hardness of the scraper 8 is 50 degrees, and the length of the cutting edge of the scraper 8 is larger than the diameter of the printing through groove 6.
Sintering process conditions in the step 5): and (3) feeding the steel into the furnace, wherein the temperature is T =550 ℃, the temperature is increased for 60min, the constant temperature is T =715 ℃, the constant temperature time is T =15min, the temperature is reduced for T =120min, and the steel is discharged when the temperature is reduced to T =550 ℃.
Example 2
The passivation process method for the printed glass comprises the following steps:
step 1) loading, namely placing a stainless steel backing plate 1 on a flat object surface, filling a gasket in a printing area, then placing a silicon single crystal wafer 3 with a mesa corrosion groove, enabling one surface with a groove 4 to face upwards, covering a stainless steel printing plate 5 on the surface of the silicon single crystal wafer 3, enabling a central printing through groove 6 of the stainless steel printing plate 5 to be located in the middle of the silicon single crystal wafer 3, and simultaneously aligning the center of the stainless steel backing plate 1, the center of the silicon single crystal wafer 3 and the center of the stainless steel printing plate 5;
step 2), coating and blade-coating glass paste 7, pouring the glass paste 7 on a stainless steel printing plate 5, scraping the glass paste 7 into the groove 4 of the silicon single crystal wafer 3 along the diagonal direction of the chip by using a scraper 8, repeating the step 2 for filling the groove 4, wherein the scraper 8 is made of resin, stainless steel, Teflon, rubber or polyurethane;
step 3), drying the glass paste 7, namely putting the silicon single crystal wafer 3 coated with the glass paste 7 on a hot plate 9 for drying, wherein the temperature of the hot plate 9 is 250 ℃, and the drying time is 25 s;
step 4), loading, namely sequentially loading the dried silicon single crystal wafers 3 into a quartz boat;
and 5) sintering the glass, pushing the quartz boat into a glass sintering furnace, and starting a glass sintering procedure.
The printing area 2 is positioned at the hole opening part of the stainless steel backing plate 1 in the step 1), the printing area 2 is matched with the shape of the silicon single crystal 3 and is slightly larger than the diameter of the silicon single crystal 3, the thickness of the stainless steel printing plate 5 is 40 microns, the area of the printing through groove 6 is matched with the silicon single crystal 3, the diameter of the printing through groove is slightly smaller than the silicon single crystal 3, and the stainless steel printing plate 5 just presses the silicon single crystal 3.
Step 1) after the silicon single crystal wafer 3 is placed in the printing area 2, the surface of the silicon single crystal wafer 3 exceeds 30um of the surface of the stainless steel backing plate 1, and the printing area 2 is padded with gaskets with different thicknesses to meet the requirement that the surface of the final silicon single crystal is 30um higher than that of the stainless steel backing plate.
The thickness of silicon single crystal piece 3 in step 2) is circular, and the diameter is 6 inches, and thickness is 600um, and one side or both sides of silicon single crystal piece 3 are equipped with slot 4, and slot 4 includes interior slot and outer slot structure, and the degree of depth of slot 4 is 150 um.
In the step 2), a blade with the height of 20mm is arranged on one side of the scraper 8, the blade is in a double-pointed shape, the angles of the blade are respectively 80 degrees, the thickness of the scraper 8 is 30mm, the length of the scraper 8 is 1.1 times of the diameter of the silicon single chip, the hardness of the scraper 8 is 90 degrees, and the length of the blade of the scraper 8 is larger than the diameter of the printing through groove 6.
Sintering process conditions in the step 5): and (3) feeding the steel into the furnace, wherein the temperature is T =535 ℃, the temperature is increased for 55min, the constant temperature is T =705 ℃, the constant temperature time is T =10min, the temperature is reduced for T =110min, and the steel is discharged when the temperature is reduced to T =540 ℃.
Example 3
The passivation process method for the printed glass comprises the following steps:
step 1) loading, namely placing a stainless steel backing plate 1 on a flat object surface, filling a gasket in a printing area, then placing a silicon single crystal wafer 3 with a mesa corrosion groove, enabling one surface with a groove 4 to face upwards, covering a stainless steel printing plate 5 on the surface of the silicon single crystal wafer 3, enabling a central printing through groove 6 of the stainless steel printing plate 5 to be located in the middle of the silicon single crystal wafer 3, and simultaneously aligning the center of the stainless steel backing plate 1, the center of the silicon single crystal wafer 3 and the center of the stainless steel printing plate 5;
step 2), coating and blade-coating glass paste 7, pouring the glass paste 7 on a stainless steel printing plate 5, scraping the glass paste 7 into the groove 4 of the silicon single crystal wafer 3 along the diagonal direction of the chip by using a scraper 8, repeating the step 2 for filling the groove 4, wherein the scraper 8 is made of resin, stainless steel, Teflon, rubber or polyurethane;
step 3), drying the glass paste 7, namely putting the silicon single crystal wafer 3 coated with the glass paste 7 on a hot plate 9 for drying, wherein the temperature of the hot plate 9 is 200 ℃, and the drying time is 10 s;
step 4), loading, namely sequentially loading the dried silicon single crystal wafers 3 into a quartz boat;
and 5) sintering the glass, pushing the quartz boat into a glass sintering furnace, and starting a glass sintering procedure.
The printing area 2 is positioned at the hole opening part of the stainless steel backing plate 1 in the step 1), the printing area 2 is matched with the shape of the silicon single crystal 3 and is slightly larger than the diameter of the silicon single crystal 3, the thickness of the stainless steel printing plate 5 is 20 microns, the area of the printing through groove 6 is matched with the silicon single crystal 3, the diameter of the printing through groove is slightly smaller than the silicon single crystal 3, and the stainless steel printing plate 5 just presses the silicon single crystal 3.
Step 1) after the silicon single crystal wafer 3 is placed in the printing area 2, the surface of the silicon single crystal wafer 3 exceeds 20um of the surface of the stainless steel backing plate 1, and the printing area 2 is padded with gaskets with different thicknesses to meet the requirement that the surface of the final silicon single crystal is higher than 20um of the surface of the stainless steel backing plate.
The thickness of silicon single crystal piece 3 in step 2) is circular, and the diameter is 4 inches, and thickness is 500um, and one side or both sides of silicon single crystal piece 3 are equipped with slot 4, and slot 4 includes interior slot and outer slot structure, and the degree of depth of slot 4 is 50 um.
In the step 2), a blade with the height of 3-20mm is arranged on one side of the scraper 8, the blade is in the shape of an oblique opening, the angle is 80 degrees, the thickness of the scraper 8 is 20mm, the length of the scraper 8 is 1.5 times of the diameter of the silicon single wafer, the hardness of the scraper 8 is 60 degrees, and the length of the blade of the scraper 8 is larger than the diameter of the printing through groove 6.
Sintering process conditions in the step 5): and (3) feeding the steel wire into the furnace, wherein the temperature is T =565 ℃, the temperature is increased for 65min, the constant temperature is T =725 ℃, the constant temperature time is T =20min, the temperature is decreased for T =130min, and the steel wire is discharged when the temperature is decreased to T =560 ℃.
Example 4
The passivation process method for the printed glass comprises the following steps:
step 1) loading, namely placing a stainless steel backing plate 1 on a flat object surface, filling a gasket in a printing area, then placing a silicon single crystal wafer 3 with a mesa corrosion groove, enabling one surface with a groove 4 to face upwards, covering a stainless steel printing plate 5 on the surface of the silicon single crystal wafer 3, enabling a central printing through groove 6 of the stainless steel printing plate 5 to be located in the middle of the silicon single crystal wafer 3, and simultaneously aligning the center of the stainless steel backing plate 1, the center of the silicon single crystal wafer 3 and the center of the stainless steel printing plate 5;
step 2), coating and blade-coating glass paste 7, pouring the glass paste 7 on a stainless steel printing plate 5, scraping the glass paste 7 into the groove 4 of the silicon single crystal wafer 3 along the diagonal direction of the chip by using a scraper 8, repeating the step for 1-2 times to fill the groove 4, wherein the scraper 8 is made of resin, stainless steel, Teflon, rubber or polyurethane;
and 3) drying the glass paste 7, and putting the silicon single crystal wafer 3 coated with the glass paste 7 on a hot plate 9 for drying, wherein the temperature of the hot plate 9 is 200 ℃, and the drying time is 20 s.
Step 4), loading, namely sequentially loading the dried silicon single crystal wafers 3 into a quartz boat;
and 5) sintering the glass, pushing the quartz boat into a glass sintering furnace, and starting a glass sintering procedure.
The printing area 2 is positioned at the hole opening part of the stainless steel backing plate 1 in the step 1), the printing area 2 is matched with the shape of the silicon single crystal 3 and is slightly larger than the diameter of the silicon single crystal 3, the thickness of the stainless steel printing plate 5 is 30 micrometers, the area of the printing through groove 6 is matched with the silicon single crystal 3, the diameter of the printing through groove is slightly smaller than the silicon single crystal 3, and the stainless steel printing plate 5 just presses the silicon single crystal 3.
Step 1) after the silicon single crystal wafer 3 is placed in the printing area 2, the surface of the silicon single crystal wafer 3 exceeds 20um of the surface of the stainless steel backing plate 1, and the printing area 2 is padded with gaskets with different thicknesses to meet the requirement that the surface of the final silicon single crystal is higher than 20um of the surface of the stainless steel backing plate.
The thickness of silicon single crystal piece 3 in step 2) is circular, and the diameter is 5 inches, and thickness is 500um, and one side or both sides of silicon single crystal piece 3 are equipped with slot 4, and slot 4 includes interior slot and outer slot structure, and the degree of depth of slot 4 is 100 um.
In the step 2), a blade with the height of 14mm is arranged on one side of the scraper 8, the blade is in a right angle shape, the angle is 90 degrees respectively, the thickness of the scraper 8 is 30mm, the length of the scraper 8 is 1.1-1.6 times of the diameter of the silicon single wafer, the hardness of the scraper 8 is 90 degrees, and the length of the blade of the scraper 8 is larger than the diameter of the printing through groove 6.
Sintering process conditions in the step 5): and feeding the furnace at T =535 ℃, heating for 65min, keeping the temperature at T =725 ℃, keeping the temperature for T =20min, cooling for T =130min, and discharging the furnace when the temperature is reduced to T =560 ℃.
Claims (6)
1. The passivation process method for the printed glass is characterized by comprising the following steps of:
step 1) loading, namely placing a stainless steel backing plate on a flat object surface, filling a gasket in a printing area, then placing a silicon single crystal wafer with a mesa corrosion groove, enabling one surface with a groove to face upwards, covering a stainless steel printing plate on the surface of the silicon single crystal wafer, enabling a central printing through groove of the stainless steel printing plate to be located in the middle of the silicon single crystal wafer, and aligning the center of the stainless steel backing plate, the center of the silicon single crystal wafer and the center of the stainless steel printing plate;
step 2), coating and scraping glass paste, pouring the glass paste on a stainless steel printing plate, scraping the glass paste into the groove of the silicon single crystal wafer along the diagonal direction of the chip by using a scraper, and repeatedly filling the groove for 1-2 times, wherein the scraper is made of resin, stainless steel, Teflon, rubber or polyurethane;
step 3) drying the glass paste, namely drying the silicon single chip coated with the glass paste on a hot plate at the temperature of 150 ℃ for 5-25 s;
step 4), loading, namely sequentially loading the dried silicon single crystal wafers into a quartz boat;
and 5) sintering the glass, pushing the quartz boat into a glass sintering furnace, and starting a glass sintering procedure.
2. The printed glass passivation process method of claim 1, characterized in that: the printing area is located at the hole opening part of the stainless steel backing plate in the step 1), the printing area is matched with the shape of the silicon single crystal wafer and slightly larger than the diameter of the silicon single crystal wafer, the thickness of the stainless steel printing plate is 15-40 microns, the printing through groove area is matched with the silicon single crystal wafer, the diameter of the printing through groove area is slightly smaller than the silicon single crystal wafer, and the stainless steel printing plate just presses the silicon single crystal wafer.
3. The printed glass passivation process method of claim 1, characterized in that: after the silicon single crystal wafer is placed in the printing area in the step 1), the surface of the silicon single crystal wafer exceeds 10-30um of the surface of the stainless steel cushion plate, and gaskets with different thicknesses are added in the printing area to meet the requirement that the surface of the final silicon single crystal wafer is 10-30um higher than the surface of the stainless steel cushion plate.
4. The printed glass passivation process method of claim 1, characterized in that: the thickness of the silicon single crystal wafer in the step 2) is circular, the diameter is 3-6 inches, the thickness is 100-.
5. The printed glass passivation process method of claim 1, characterized in that: a blade with the height of 3-20mm is arranged on one side of the scraper in the step 2), the blade is in the shape of a double sharp opening, an oblique opening or a right angle, the angles of the blade are 20-80 degrees, 20-80 degrees and 90 degrees respectively, the thickness of the scraper is 5-30mm, the length of the scraper is 1.1-1.6 times of the diameter of the silicon single wafer, the hardness of the scraper is 50-90 degrees, and the length of the blade of the scraper is larger than the diameter of the printing through groove.
6. The printed glass passivation process method of claim 1, characterized in that: the sintering process conditions in the step 5) are as follows: and (3) feeding the steel into the furnace at T =550 +/-15 ℃, heating for 60 +/-5 min, keeping the temperature at T =715 +/-10 ℃, keeping the temperature for T =15 +/-5 min, cooling for T =120 +/-10 min, and discharging the steel from the furnace when the temperature is reduced to T =550 +/-10 ℃.
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| CN202111515964.6A CN114334793A (en) | 2021-12-13 | 2021-12-13 | Printed glass passivation process |
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| CN202111515964.6A CN114334793A (en) | 2021-12-13 | 2021-12-13 | Printed glass passivation process |
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| CN114334793A true CN114334793A (en) | 2022-04-12 |
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