CN114334781A - Positioning device and method for crystal orientation of wafer - Google Patents
Positioning device and method for crystal orientation of wafer Download PDFInfo
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- CN114334781A CN114334781A CN202111653431.4A CN202111653431A CN114334781A CN 114334781 A CN114334781 A CN 114334781A CN 202111653431 A CN202111653431 A CN 202111653431A CN 114334781 A CN114334781 A CN 114334781A
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Abstract
The invention provides a positioning device and a method for a crystal orientation of a wafer, wherein the device comprises: the device comprises a bearing ring, a rotary adsorption device and a calibration device; the supporting ring is constructed into at least one circle of supporting ring surface which extends inwards in the radial direction to support the wafer, and the supporting ring surface is provided with a plurality of first sensors which are arranged in a ring shape to collect detection data determined based on the wafer pressing and supporting the first sensors; the calibration device comprises an adjusting block which moves transversely and is provided with a calibration edge; after the bearing ring surface is separated from the wafer, the wafer is adsorbed by the rotary adsorption device and coarse adjustment rotation is carried out so as to rotate the flat edge of the wafer to a state facing the calibration edge, and the adjusting block is transversely moved so as to carry out fine adjustment rotation on the wafer in the process of matching the calibration edge with the flat edge of the wafer. By adopting the invention, the flat edge of the wafer can be accurately positioned, the problem that the flat edges of the wafer are not uniform in the placing process is solved, and the manufacturing yield of the wafer is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to a positioning device and a positioning method for a wafer crystal direction.
Background
Before slicing a silicon ingot (ingot) into wafers (wafer), a flat corner called a flat edge (flat) is typically cut at the edge of the ingot. The flat edge is cut at the edge of the silicon ingot to indicate the crystal orientation of the single crystal growth in the wafer and also help the subsequent process to determine the placement position of the wafer. After a silicon ingot is cut into wafers, a plurality of semiconductor processes such as photolithography (Photo), film epitaxy (T/F), etching (Etch), and Chemical Mechanical Polishing (CMP) are also required to complete the fabrication of Integrated Circuits (ICs). In the semiconductor process, it is necessary to repeatedly transport the wafer and perform the corresponding semiconductor process at the processing position corresponding to the wafer orientation. However, during the process of placing the wafer by the robot arm, the flat edge characterizing the crystal direction of the wafer is easily deflected. Therefore, before the wafer is placed at the position to be processed by the robot arm, the direction of the flat edge of the wafer needs to be corrected, so that the wafer can be accurately placed at the position to be processed, and the subsequent processing work can be conveniently carried out.
In view of the above, there is a need for an improved wafer orientation positioning apparatus and method in the prior art to solve the above problems.
Disclosure of Invention
The invention aims to disclose a positioning device and a positioning method for a wafer crystal orientation, which are used for solving the problems that the flat edges representing the wafer crystal orientation are not uniform in the placing process of a wafer and effective integrated circuits cannot be formed on the surface of the wafer in subsequent various semiconductor manufacturing processes due to the non-uniform wafer crystal orientation.
In order to achieve the above object, the present invention provides a positioning apparatus for wafer crystal orientation, including: the wafer polishing device comprises a supporting ring, a rotary adsorption device and a calibration device, wherein the supporting ring is constructed into at least one circle of supporting ring surface which extends inwards in the radial direction to support a wafer;
the supporting ring surface is provided with a plurality of first sensors which are annularly arranged so as to collect detection data determined based on the wafer pressing and supporting of the first sensors;
the calibration device comprises an adjusting block which moves transversely and is provided with a calibration edge;
after the bearing ring surface is separated from the wafer, the wafer is adsorbed by the rotary adsorption device and coarse adjustment rotation is carried out, so that the flat edge of the wafer is rotated to a state facing the calibration edge, and the adjusting block is transversely moved, so that fine adjustment rotation is carried out on the wafer in the process of matching the calibration edge with the flat edge of the wafer.
As a further improvement of the invention, the supporting ring also comprises an annular side wall which expands upwards and gradually tapers from top to bottom from the outer edge of the supporting ring surface, the bottom of the annular side wall is matched with the edge of the wafer, and the inner surface of the annular side wall is smooth.
As a further improvement of the present invention, the supporting ring is configured with at least two rings of supporting ring surfaces extending radially inward to support the wafer, and adjacent supporting ring surfaces are gradually enlarged from bottom to top along the vertical direction.
As a further improvement of the invention, a plurality of second sensors are horizontally arranged on the calibration edge according to the length of the flat edge, so as to collect detection data determined based on the pressing and holding of the flat edge by the second sensors.
As a further improvement of the present invention, the calibrating device further includes a second driving device, and a telescopic mechanism for connecting the second driving device and the adjusting block, wherein the telescopic mechanism is controlled by the second driving device to transversely drive the adjusting block formed at the end of the telescopic mechanism to transversely move, so as to perform fine adjustment rotation on the wafer during the process of matching the calibrating edge with the flat edge of the wafer.
As a further improvement of the present invention, the rotary adsorption device includes a rotation unit and an adsorption unit, the adsorption unit is mounted on the rotation unit, the adsorption unit adsorbs the wafer onto the rotation unit, and the rotation unit drives the wafer to rotate.
As a further improvement of the present invention, the rotation unit includes a supporting platform, a third driving device, and a rotation shaft for connecting the third driving device and the supporting platform, the supporting platform is driven by the third driving device to rotate by driving the rotation shaft, and the wafer placed on the supporting platform is further driven to rotate.
As a further improvement of the present invention, the supporting ring is connected to a first driving device, and the first driving device drives the supporting ring to make the supporting ring and the supporting platform move relatively far from each other up and down, so as to separate the wafer from the supporting ring surface.
As a further improvement of the present invention, the adsorption unit includes an adsorption hole disposed in the center of the supporting platform, an air passage disposed in the rotating shaft and communicated with the adsorption hole, and a negative pressure generator connected to the air passage, and a vacuum environment is formed in the air passage by the negative pressure generator to adsorb the wafer placed on the supporting platform.
Meanwhile, the invention also provides a positioning method of the crystal orientation of the wafer, which is realized by adopting the positioning device and comprises the following steps:
s1, according to the length of a flat edge representing the crystal direction of the wafer and the position of a calibration edge, selecting two first sensors of a plurality of first sensors annularly arranged on a bearing ring surface as two base points, taking the records as target data, and taking a connecting line between the base points as a reference edge, wherein the reference edge is parallel to the calibration edge and is close to the calibration edge;
s2, placing the wafer on the bearing ring surface, and collecting detection data determined based on the fact that the wafer presses and holds the first sensor;
s3, separating the bearing ring surface and the wafer, calculating the rotation angle of the flat edge according to the detection data and the target data, controlling the rotary adsorption device to adsorb the wafer and executing coarse rotation so as to rotate the flat edge to a state facing the calibration edge;
and S4, transversely moving the adjusting block to perform fine adjustment rotation on the wafer in the process of matching the calibration edge with the flat edge of the wafer.
Compared with the prior art, the invention has the beneficial effects that: placing a wafer on a ring body with a plurality of first sensors arranged in an annular shape to collect detection data determined based on the wafer pressing the first sensors; after the wafer is separated from the ring body, the flat edge representing the crystal direction of the wafer is adjusted through the rotary adsorption device and the calibration device, so that the calibration edge is matched with the flat edge representing the crystal direction of the wafer, and the accurate positioning of the crystal direction of the wafer is realized. The positioning device provided by the invention has the advantages of simple structure and convenience in operation, and can accurately position the flat edge of the wafer by positioning the wafer based on the positioning device, thereby solving the problem that the flat edge representing the crystal orientation of the wafer is not uniform, and ensuring that the crystal orientation of the wafer in various semiconductor manufacturing processes always accords with a preset angle, thereby improving the manufacturing yield of the wafer.
Drawings
FIG. 1 is a perspective view of a wafer orientation positioning apparatus according to the present invention in one state;
FIG. 2 is a perspective view of the positioning device shown in FIG. 1 in another state;
FIG. 3 is a perspective view of the positioning device shown in FIG. 1 in yet another state;
FIG. 4 is an enlarged view of a portion of circle A of FIG. 2;
FIG. 5 is an enlarged view of a portion of circle B of FIG. 3;
FIG. 6 is a schematic diagram of a wafer during a positioning process;
FIG. 7 is a cross-sectional view of a retainer ring in one embodiment;
FIG. 8 is a flowchart illustrating a method for positioning a wafer orientation according to the present invention.
Detailed Description
As shown in fig. 1 to 3, the positioning apparatus 100 for wafer orientation (hereinafter referred to as "positioning apparatus") includes: the wafer aligning device comprises a supporting ring 1, wherein the supporting ring 1 is constructed into at least one circle of supporting ring surface 11 which extends inwards in the radial direction to support a wafer 5, a rotary adsorption device 2 which is coaxially arranged with the supporting ring surface 11, and an aligning device 3; the supporting ring surface 11 is provided with a plurality of first sensors 111 which are annularly arranged so as to collect detection data determined based on the wafer 5 pressing the first sensors 111, and the width of the supporting ring surface 11 can be selected according to the size of the first sensors 111; the calibration device 3 comprises a regulating block 31 which moves transversely and is provided with a calibration edge 311; after the support ring 11 is separated from the wafer 5, the wafer 5 is adsorbed by the rotary adsorption device 2 and roughly rotated to rotate the flat edge 51 of the wafer 5 to a state facing the alignment edge 311, and the adjustment block 31 is laterally moved to perform fine rotation on the wafer 5 during the alignment of the alignment edge 311 and the flat edge 51 of the wafer 5.
A circle center O formed by a circle defined by the support ring surface 11 coincides with a central axis 200 defined by the support ring surface 11 along the vertical direction, and a circle center formed by the support platform 211 (or a center formed by the support platform 211 having a rectangular or regular polygon shape) and a circle center formed by the wafer 5 respectively also coincide with the central axis 200 hereinafter. The lateral movement defined by the adjustment block 31 is movement in the x-axis direction as shown in fig. 1, and the up-and-down movement defined by the retainer ring 1 is movement in the z-axis direction as shown in fig. 1.
The supporting ring 1 further comprises an annular sidewall 10 which expands upwards from the outer edge of the supporting ring surface 11 and tapers from top to bottom, the bottom 14 of the annular sidewall 10 is matched with the edge of the wafer 5, and the inner surface of the annular sidewall 10 is smooth.
Referring to fig. 1 and 3, in the present embodiment, the upper diameter of the annular sidewall 10 is larger than the diameter of the wafer 5, when the robot arm puts the wafer 5 in from above the annular sidewall 10, the wafer 5 falls down onto the supporting ring surface 11 under the action of gravity, and since the bottom 14 of the annular sidewall 10 is matched with the edge of the wafer 5, the centering step is completed when the wafer 5 completely lies on the supporting ring surface 11. The annular side wall 10 provides a guide surface for the fall of the wafer 5 during the fall of the wafer 5. Specifically, the inner wall of the annular side wall 10 is a smooth arc surface, the annular side wall 1 can assist the wafer 5 to be gently placed on the bearing ring surface 11, thereby avoiding the edge of the wafer 5 from being damaged due to impact force in the falling process, simultaneously simplifying the centering step and improving the centering efficiency, effectively preventing the wafer from inclining in the loading process to the bearing ring surface 11, and being beneficial to realizing centering operation on the wafer, so that the circle center O of the wafer and the circle center O of the bearing ring surface 11 and the circle center O of the supporting platform are concentrically arranged.
Referring to fig. 1, 3 and 5, when the wafer 5 is placed on the supporting ring surface 11, the first sensors 111 annularly disposed on the supporting ring surface 11 sense whether the edge of the wafer 5 presses the first sensors 111, so as to obtain the position of the flat edge 51. The first sensor 111 pressed by the wafer 5 generates an inductive signal, and the first sensor 111 not pressed generates no inductive signal, and at this time, the position of the first sensor 111 corresponding to no inductive signal represents the approximate position of the flat edge 51 of the wafer 5, as shown in fig. 3 and 5. The first sensor 111 transmits the collected sensing signal to a central processing unit (not shown, and may employ a CPU or MCU having a logic operation function) electrically connected thereto, and configured to hold target data preset by the first sensor 111 based on the wafer 5. The central processing unit processes the acquired detection data determined based on the wafer 5 pressing and holding the first sensor 111 and target data preset in the central processing unit based on the wafer 5 pressing and holding the first sensor 111, namely: according to the length of the flat edge 51 and the position of the calibration edge 311, two first sensors 111 of the plurality of first sensors 111 annularly arranged on the supporting ring surface 11 are selected as two base points (i.e., A0 and B0), and a connecting line between the base points is used as a reference edge A0B0, and the reference edge A0B0 is parallel to the calibration edge 311 and is close to the calibration edge 311.
In the present embodiment, referring to fig. 6, a two-dimensional reference coordinate system (top projection angle) is established with the center O of the annular sidewall 10 as the center, the direction along the perpendicular bisector of the reference side A0B0 is the x-axis, and the direction parallel to the reference side A0B0 is the y-axis. The geometric center or a specific point on the set edge of the first sensor 111 is used as a base point, for example, the center of the first sensor 111 is used as the base point coordinate of the first sensor 111, and the base point coordinate obtained at this time is a0 (x)1，y1) And B0 (x)2，y2) This is recorded as target data, and the reference edge A0B0 is the target position of the wafer 5.
Based on the established two-dimensional reference coordinate system, the CPU obtains the coordinate A1 (x) of the end point of the flat edge 51 determined based on the wafer 5 pressing the first sensor 1113，y3) And B1 (x)4，y4) The coordinates are detected data determined based on the wafer 5 pressing the first sensor 111, and A1B1 is the initial position of the wafer 5.
But since the central processor takes the geometric center of the first sensor 111 or a specific point on a set edge as a base point when selecting the base point; in the process of actually acquiring the detection data determined based on the wafer 5 pressing the first sensor 111, when the wafer 5 contacts the first sensor 111, there may be a phenomenon that the end point of the flat edge 51 of the wafer 5 cannot completely cover the first sensor 111 corresponding to the end point of the flat edge 51, that is, the end point of the flat edge 51 of the wafer is only pressed to a partial area of the first sensor 111 corresponding to the end point of the flat edge 51, but the first sensor 111 corresponding to the end point of the flat edge 51 generates a signal regardless of whether the wafer 5 is pressed to the partial area or the entire area of the first sensor 111; however, the cpu cannot determine whether the flat edge 51 actually presses the geometric center of the first sensor 111 or a specific point on the set edge, which causes the cpu to deviate when processing the acquired detection data determined based on the wafer 5 pressing the first sensor 111, and mistakenly defaults A2B2 shown in fig. 6 as the target position of the flat edge 51; the rotation angle α of the flat edge 51 calculated by the cpu is:
α=arctan(((x3- x1)2+( y3- y1)2)1/2/R), or
α=arctan(((x4- x2)2+( y4- y2)2)1/2/R)；
Where R is the radius of the wafer 5.
At this time, the cpu transmits the obtained signal of the rotation angle α of the flat edge 51 to the spin chuck 2, and performs rough adjustment rotation while chuck the wafer 5 by the spin chuck 2, so as to rotate the flat edge 51 to face the alignment edge 311. The control principle of the central processor for the rotary suction device 2, and the first driving device 12 and the second driving device 33 mentioned below is prior art and will not be described in detail herein.
It should be noted that the plurality of first sensors 111 arranged annularly on the bearing ring surface 11 may be arranged continuously or discontinuously, and the number of first sensors 111 is only the size of the range for subsequent fine adjustment by the calibration device 3, i.e. the size of the range of the error angle β shown in fig. 6. When the number of the first sensors 111 arranged on the support ring surface 11 is larger, and the central processing unit processes data, the obtained detection data determined based on the wafer 5 pressing the first sensors 111, namely the coordinates of a1 and B1, are more accurate, the positioning error of the flat edge 51 after coarse adjustment and rotation is smaller, and the subsequent fine adjustment range through the calibration device 3 is smaller. Preferably, the number of first sensors 111 provided on the supporting ring surface 11 is set to 360 and arranged uniformly and circularly on the supporting ring surface 11, so that the subsequent fine adjustment by the calibrating device 3 is only 1 °.
Further, the supporting ring 1 is configured with at least two rings of supporting ring surfaces 11 extending radially inward to support the wafer 5, and the adjacent supporting ring surfaces 11 are gradually enlarged from bottom to top along the vertical direction. For example, referring to fig. 7, the supporting ring 1' is configured with three supporting ring surfaces 11a, 11b and 11c extending radially inward to support the wafer 5, and the three supporting ring surfaces are sequentially arranged in a descending manner from top to bottom in the vertical direction; preferably, the bearing annuli 11a, 11b and 11c are all of equal width in the radial direction. At this time, the outer edges of the self-supporting ring surfaces 11a, 11b and 11c are expanded upwards to form annular side walls 10a, 10b and 10c which are gradually reduced from top to bottom, the first sensors 111 are arranged on the supporting ring surfaces 11a, 11b and 11c, so that one positioning device 100 can position wafers 5 of different specifications, and the wafers 5 of different specifications are placed without interference, so that the limitation of the wafers (such as wafers of 4 inches, 6 inches, 8 inches or 12 inches) with different diameters is realized through the annular side walls on the outer sides of the supporting ring surfaces, and the deviation or dislocation between the circle center of the wafer and the circle center O of the supporting ring surface 11 cannot occur in the coarse adjustment, fine adjustment and fine adjustment processes of the wafer. It should be noted that, hereinafter, the supporting platform 211 passes through the channel 13, and the first driving device 12 drives the supporting ring surface 11 to perform ascending and descending along the z-axis, so as to select to adjust the supporting ring surface corresponding to the wafer 5 to be positioned to be located on the same horizontal plane as the supporting platform 211, and to sense whether the edge of the wafer 5 presses the first sensor 111; in addition, it is required to ensure that the supporting ring surface 11 does not interfere with the adjusting block 31 which moves transversely in the fine adjustment process in the ascending and descending processes, and the specific numerical value and the combination mode of the outer edge diameter of the supporting ring surface 11 can be obtained according to the actual use condition; for example, the bottom 14a of the annular sidewall 10a fits the edge of a 12-inch wafer, the bottom 14b of the annular sidewall 10b fits the edge of an 8-inch wafer, and the bottom 14c of the annular sidewall 10c fits the edge of a 6-inch wafer, which enlarges the application range of the positioning device 100 and improves the adaptability and convenience of the positioning device 100.
In order to avoid that the wafer 5 continues to be pressed against the first sensor 111 during the rotational positioning process, which causes the central processing unit to acquire detection data based on the wafer 5 pressing against the first sensor 111 multiple times, and thus causes the central processing unit to give an erroneous instruction, the wafer 5 needs to be separated from the first sensor 111 disposed on the support ring surface 11 before the direction of the flat edge 51 of the wafer 5 to be positioned is adjusted. Referring to fig. 2 and 7, in the present embodiment, a channel 13 is formed in the central region of the supporting ring surface 11, a first driving device 12 is disposed at the bottom of the supporting ring surface 11, when the first sensor 111 collects the detection data determined based on the pressure holding of the wafer 5, the central processing unit controls the first driving device 12 to drive the supporting ring surface 11 to move downward so as to separate the supporting ring surface 11 from the wafer 5, at this time, the plane of the supporting ring surface 11 is lower than the surface of the supporting platform 211, and it is ensured that the supporting ring 1 does not affect the lateral movement of the subsequent adjusting block 31. In the present embodiment, the first driving device 12 is a micro cylinder, for example, two first driving devices 12 are symmetrically disposed at the bottom of the supporting ring surface 11, so as to stably support the supporting ring surface 11 by driving the first driving devices 12 to perform the ascending and descending actions along the z-axis. The first driving device 12 is disposed at the bottom of the supporting ring 11, but not limited to, and can be connected to other positions on the supporting ring 1, such as the outer side of the annular sidewall 10, as long as the supporting ring 11 and the supporting platform 211 move relatively away from each other up and down to separate the supporting ring 11 from the wafer 5.
Referring to fig. 2, the rotary adsorption device 2 includes a rotation unit 21 and an adsorption unit, the adsorption unit is installed on the rotation unit 21, the adsorption unit adsorbs the wafer 5 on the rotation unit 21, and the rotation unit 21 drives the wafer 5 to rotate. The rotating unit 21 includes a supporting platform 211 coaxially disposed with the supporting ring surface 11 and used for supporting the wafer 5, a third driving device 213, and a rotating shaft 212 for connecting the third driving device 213 and the supporting platform 211, the third driving device 213 drives the supporting platform 211 to rotate by driving the rotating shaft 212, and further drives the wafer 5 placed on the supporting platform 211 to rotate, wherein the supporting platform 211 can pass through the channel 13, and the supporting platform 211 can move up and down along the z axis relative to the supporting ring surface 11. The adsorption unit includes an adsorption hole 22 formed in the center of the supporting platform 211, an air channel (not shown) formed in the rotation shaft 212 and communicating with the adsorption hole 22, and a negative pressure generator (not shown) connected to the air channel, and a vacuum environment is formed in the air channel by the negative pressure generator to adsorb the wafer placed on the supporting platform 211.
Specifically, when the central processing unit sends the obtained signal of the rotation angle α of the flat edge 51 to the rotary adsorption device 2, the negative pressure generator forms a negative pressure environment in the air passage, and adsorbs the wafer 5 on the supporting platform 211 through the adsorption hole 22 arranged at the center of the supporting platform 211 by using the atmospheric pressure, so as to prevent external environmental factors from generating interference on the rotating wafer 5, thereby preventing the wafer 5 from shifting, inclining or falling in the horizontal direction, and improving the centering accuracy on the wafer 5. Meanwhile, the cpu controls the third driving device 213 to drive the rotating shaft 212 to rotate according to a signal fed back by the cpu (i.e., the rotation angle α of the flat edge 51), and drives the supporting platform 211 connected to the rotating shaft 212 to rotate, so that the wafer 5 adsorbed on the supporting platform 211 rotates along with the rotating shaft, and the flat edge 51 of the wafer 5 rotates from A1B1 to A2B2, as shown in fig. 6, at this time, the flat edge 51 rotates to a state facing the alignment edge 311, and the coarse adjustment rotation is completed.
It should be noted that the third driving device 213 may be a servo motor or a stepping motor to realize high-precision rotation of the wafer 5. At least one suction hole 22 is formed at the center of the supporting platform 211 to suck the wafer 5 and fix the center of the wafer 5. The shape of the supporting platform 211 includes, but is not limited to, a circular shape, and may also be a rectangular shape or a regular polygon shape, as long as it is ensured that the center formed by the supporting platform 211 coincides with the central axis 200.
As shown in fig. 6, after the wafer 5 is roughly adjusted by the rotary suction device 2, the position of the flat edge 51 at this time is aligned with the target position, that is, the roughly adjusted flat edge 51 is aligned with A2B2, and an error angle β exists between the position and the reference edge A0B0, so that the position of the roughly adjusted flat edge 51 needs to be calibrated again to complete the precise positioning of the flat edge 51. The angle of rotation actually required for the flat edge 51 throughout the positioning process is θ.
Referring to fig. 2 and 4, the alignment apparatus 3 includes an adjusting block 31 moving laterally and provided with an alignment edge 311, a second driving device 33, and a telescopic mechanism 32 for connecting the second driving device 33 and the adjusting block 31, wherein the telescopic mechanism 32 is controlled by the second driving device 33 to laterally drive the adjusting block 31 formed at the end of the telescopic mechanism 32 to move laterally so as to perform fine adjustment rotation on the wafer 5 during the alignment edge 311 is matched with the flat edge 51 of the wafer 5.
In order to make the positioning device 100 more stable in the operation process, the positioning device 100 further includes a supporting seat 4, the first driving device 12 and the second driving device 33 are fixed on the supporting seat 4, the third driving device 213 is disposed below the supporting seat 4, and the rotating shaft 212 penetrates through the supporting seat 4 and extends upward to be connected below the supporting platform 211, so that the whole positioning device 100 is stably supported and has a compact structure.
The adjusting block 31 may be fixedly connected to the end of the telescopic mechanism 32 as long as the adjusting block 31 can move transversely. However, considering that the wafer 5 is relatively thin and brittle, in order to avoid damaging the wafer during pushing the wafer 5, in the embodiment, the retractable mechanism 32 includes a sliding seat 320 connected to the second driving device 33, and an actuating element 322 connected to the adjusting block 31, the sliding seat 320 forms a clamping channel 321 for the actuating element 322 to extend into and movably clamp the actuating element 322, an elastic element 323 is fixedly disposed in the clamping channel 321, and one end of the elastic element 323 is connected to the actuating element 322 for buffering a reverse force applied to the wafer 5 pushed by the adjusting block 31. In this embodiment, the elastic element 323 is a spring.
Specifically, the wafer 5 after rough adjustment is continuously adsorbed on the supporting platform 211 by the adsorption unit, so that the center of the circle of the wafer 5 is fixed. The alignment edge 311 of the adjustment block 31 is parallel to the reference edge of the flat edge 51 (i.e., the edge on which the flat edge 51 rotates to the target position). The central processing unit drives the second driving device 33, and drives the telescoping mechanism 32 and the adjusting block 31 to move transversely through the second driving device 33. When the adjusting block 31 is slowly close to the wafer 5, the elastic element 323 is in a relaxed state, and the actuating member 322 connected with the elastic element is moved transversely therewith; because the flat edge 51 and the calibration edge 311 form an included angle, i.e., an error included angle β, during the lateral movement of the adjusting block 31, the calibration edge 311 contacts with one end of the flat edge 51 first, and generates an acting force on the wafer 5 at the position where the calibration edge 311 contacts with the flat edge 51, the elastic element 323 is gradually compressed and applies an acting force to the actuating rod 322, and the actuating rod 322 applies its pushing force on the wafer 5; since the wafer 5 is adsorbed on the supporting platform 211, when the pushing force of the actuating rod 322 on the wafer 5 is greater than the friction force between the wafer 5 and the supporting platform 211, the wafer 5 rotates around the center O, and the wafer 5 is precisely rotated in the process of matching the calibration edge 311 with the flat edge 51, so that the flat edge 51 is precisely positioned. By arranging the elastic element 323 on the telescopic mechanism 32, the adjusting block 31 can be ensured not to damage the wafer 5 during movement, and the buffer protection effect is achieved. Therefore, during the fine rotation, the alignment edge 311 is engaged with the flat edge 51 to achieve the conversion from point contact to line contact.
After the positioning is completed, the central processing unit controls the second driving device 33 to operate reversely, the adjusting block 31 is driven to be far away from the wafer 5 by driving the telescopic mechanism 32, the rotary adsorption device 2 stops adsorbing the wafer 5, the robot arm clamps and takes away the positioned wafer 5 on the supporting platform 211 and executes the next process, at the moment, the first driving device 12 raises the supporting ring surface 11 to the same horizontal plane with the supporting platform 211 to wait for the next wafer 5 to be positioned. The directions of the flat edges 51 of the wafer 5 corrected by using the positioning device 100 are uniform, so that the wafer 5 can be accurately placed at a position to be processed in the subsequent process of taking and placing the wafer 5 by a mechanical arm.
Further, in order to ensure that a more accurate positioning effect is achieved, a plurality of second sensors (not identified) may be further disposed on the calibration edge 311 according to the length of the flat edge 51, so as to collect monitoring data determined based on the pressing and holding of the flat edge 51 by the second sensors. Whether the calibration edge 311 and the flat edge 51 are completely matched is determined by sensing whether the flat edge 51 is pressed against the second sensor. It should be noted that the number and arrangement of the second sensors are not limited, for example, simply, one second sensor is arranged at each of the left and right ends of the calibration edge 311 at a position matching the flat edge 51, and when all the two second sensors at the two ends generate sensing signals, it indicates that the calibration edge 311 and the flat edge 51 are determined to be completely matched. In addition, a support (not shown) may be disposed below the actuating rod 322 and fixed on the sliding seat 320 to increase the stability of the actuating rod 322 when the actuating rod 322 moves the adjusting block 31 in the transverse direction.
Referring to fig. 6 and 8, an embodiment of the invention provides a method for positioning a wafer orientation by using the positioning apparatus 100, including the following steps:
step S1, according to the length of the flat edge 51 representing the crystal direction of the wafer and the position of the calibration edge 311, selecting two first sensors 111 of the plurality of first sensors 111 annularly arranged on the bearing ring surface 11 as two base points (A0 and B0), taking the two base points as target data, and taking a connecting line between the base points as a reference edge A0B0, wherein the reference edge A0B0 is parallel to the calibration edge 311 and is close to the calibration edge 311;
in the present embodiment, a two-dimensional reference coordinate system is established with the center O of the annular side wall 10 as the center, the direction along the perpendicular bisector of the reference side A0B0 is the x-axis, and the direction parallel to the reference side A0B0 is the y-axis. The geometric center or a specific point on the set edge of the first sensor 111 is used as a base point, for example, the center of the first sensor 111 is used as the base point coordinate of the first sensor 111, and the base point coordinate obtained at this time is a0 (x)1，y1) And B0 (x)2，y2) The reference edge A0B0 is the target position of the wafer 5.
Step S2, placing the wafer 5 on the bearing ring surface 11, and collecting detection data determined based on the wafer 5 pressing the first sensor 111;
in this step, based on the established two-dimensional reference coordinate system, the cpu processes the wafer 5 to obtain a1 (x) as the coordinate of the end point of the flat edge 51 determined by the first sensor 1113，y3) And B1 (x)4，y4) The coordinates are the determined inspection data, and A1B1 is the initial position of the wafer 5.
Step S3, separating the support ring surface 11 and the wafer 5, calculating the rotation angle of the flat edge 51 according to the detection data and the target data, controlling the rotary adsorption device 2 to adsorb the wafer 5 and performing coarse rotation to rotate the flat edge 51 to a state facing the reference edge;
the cpu processes the obtained coordinates a0, B0, a1, and B1, and calculates the rotation angle α of the flat edge 51 of the wafer 5 as:
α=arctan(((x3- x1)2+( y3- y1)2)1/2/R), or
α=arctan(((x4- x2)2+( y4- y2)2)1/2/R)；
Where R is the radius of the wafer 5.
The cpu controls the first driving device 12 to separate the supporting ring 11 from the wafer 5, controls the suction unit to suck the wafer 5 onto the supporting platform 211, and drives the third driving device 213 to rotate at the rotation angle α to coarsely position the flat edge 51 of the wafer 5, where the flat edge 51 rotates from A1B1 to A2B 2. When the base point is selected, the central processor takes the geometric center of the first sensor 111 or a specific point on a set edge as the base point; however, in the process of actually collecting the detection data determined based on the wafer 5 pressing the first sensor 111, the cpu cannot determine whether the flat edge 51 actually presses the geometric center of the first sensor 111 or a specific point on the set edge, which causes the cpu to generate a deviation when processing the obtained detection data determined based on the wafer 5 pressing the first sensor 111, and therefore, the flat edge 51 needs to be finely adjusted.
Step S4, the adjusting block 31 is moved laterally to perform fine rotation on the wafer 5 during the alignment of the alignment edge 311 with the flat edge 51 of the wafer 5.
The position of the flat edge 51 adjusted in step S3 still has an error angle β with the reference edge, the cpu controls the adsorption unit to adsorb the wafer 5 on the supporting platform 211, and the cpu controls the second driving device 33 to drive the telescopic mechanism 32 to drive the adjusting block 31 to move laterally and push the wafer 5 to rotate around the center O, so that the A2B2 coincides with the A0B0, that is, the wafer 5 rotates to the target position, thereby completing the precise positioning.
After the crystal orientation of the wafer is positioned, the central processing unit controls the second driving device 33 to drive the adjusting block 31 to move in the opposite direction along the x axis so as to be away from the wafer 5 loaded on the supporting platform 211, meanwhile, the rotary adsorption device 2 stops working, the robot arm takes away the wafer 5 and executes the next process, the first driving device 12 drives the supporting ring surface 11 to ascend to the same horizontal plane with the supporting platform 211, and the supporting ring surface is restored to the position shown in fig. 1 to wait for the next wafer 5 to be positioned to be placed. Placing the wafer 5 on a supporting ring surface 11 with a plurality of first sensors 111 annularly arranged, so as to collect detection data determined based on the wafer 5 pressing the first sensors 111; the wafer 5 is separated from the bearing ring surface 11, and the flat edge 51 representing the crystal direction of the wafer is adjusted through the rotary adsorption device 2 and the calibration device 3, so that the calibration edge 311 is inosculated with the flat edge 51 representing the crystal direction of the wafer, and the accurate positioning of the crystal direction of the wafer is realized. The positioning device 100 provided by the invention has a simple structure and is convenient to operate, and the positioning of the wafer 5 is performed based on the positioning device 100, so that the flat edge 51 of the wafer can be accurately positioned, the problem that the flat edge 51 representing the crystal direction of the wafer is not uniform is solved, the crystal direction of the wafer in various semiconductor manufacturing processes always accords with a preset angle, and the manufacturing yield of the wafer 5 is improved.
The above-listed detailed description is only a specific description of a possible embodiment of the present invention, and they are not intended to limit the scope of the present invention, and equivalent embodiments or modifications made without departing from the technical spirit of the present invention should be included in the scope of the present invention.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (10)
1. A positioning device for wafer crystal orientation is characterized by comprising:
the wafer polishing device comprises a supporting ring, a rotary adsorption device and a calibration device, wherein the supporting ring is constructed into at least one circle of supporting ring surface which extends inwards in the radial direction to support a wafer;
the supporting ring surface is provided with a plurality of first sensors which are annularly arranged so as to collect detection data determined based on the wafer pressing and supporting of the first sensors;
the calibration device comprises an adjusting block which moves transversely and is provided with a calibration edge;
after the bearing ring surface is separated from the wafer, the wafer is adsorbed by the rotary adsorption device and coarse adjustment rotation is carried out, so that the flat edge of the wafer is rotated to a state facing the calibration edge, and the adjusting block is transversely moved, so that fine adjustment rotation is carried out on the wafer in the process of matching the calibration edge with the flat edge of the wafer.
2. The wafer orientation positioning device of claim 1,
the supporting ring also comprises an annular side wall which expands upwards and shrinks gradually from top to bottom from the edge of the outer side of the supporting ring surface, the bottom of the annular side wall is matched with the edge of the wafer, and the inner surface of the annular side wall is smooth.
3. The wafer orientation positioning device of claim 2,
the supporting ring is constructed into at least two rings of supporting ring surfaces which radially extend inwards to support the wafer, and the adjacent supporting ring surfaces are gradually expanded from bottom to top along the vertical direction.
4. The wafer orientation positioning device of claim 1,
and horizontally arranging a plurality of second sensors on the calibration edge according to the length of the flat edge so as to collect detection data determined by pressing and holding the second sensors on the basis of the flat edge.
5. The wafer orientation positioning device of claim 1,
the calibrating device further comprises a second driving device and a telescopic mechanism used for connecting the second driving device and the adjusting block, wherein the telescopic mechanism is controlled by the second driving device and transversely drives the adjusting block formed at the tail end of the telescopic mechanism to transversely move so as to perform fine adjustment rotation on the wafer in the process of matching the calibrating edge with the flat edge of the wafer.
6. The wafer orientation positioning device of claim 1,
the rotary adsorption device comprises a rotary unit and an adsorption unit, wherein the adsorption unit is arranged on the rotary unit, and adsorbs the wafer on the rotary unit through the adsorption unit, and the rotary unit drives the wafer to rotate.
7. The wafer orientation positioning device of claim 6,
the rotating unit comprises a supporting platform, a third driving device and a rotating shaft, wherein the supporting platform is coaxial with the supporting ring surface and is used for supporting the wafer, the rotating shaft is used for connecting the third driving device and the supporting platform, and the third driving device drives the rotating shaft to drive the supporting platform to rotate so as to drive the wafer placed on the supporting platform to rotate.
8. The wafer orientation positioning device of claim 7,
the bearing ring is connected with a first driving device, and the bearing ring is driven by the first driving device, so that the bearing ring and the bearing platform move up and down relatively away from each other, and the wafer is separated from the bearing ring surface.
9. The wafer orientation positioning device of claim 7,
the adsorption unit comprises an adsorption hole arranged at the center of the supporting platform, an air passage arranged in the rotating shaft and communicated with the adsorption hole, and a negative pressure generator connected with the air passage, wherein a vacuum environment is formed in the air passage through the negative pressure generator so as to adsorb the wafer arranged on the supporting platform.
10. A method for positioning a wafer crystal orientation, which is implemented by using the positioning device according to any one of claims 1-9, and comprises the following steps:
s1, according to the length of a flat edge representing the crystal direction of the wafer and the position of a calibration edge, selecting two first sensors of a plurality of first sensors annularly arranged on a bearing ring surface as two base points, taking the records as target data, and taking a connecting line between the base points as a reference edge, wherein the reference edge is parallel to the calibration edge and is close to the calibration edge;
s2, placing the wafer on the bearing ring surface, and collecting detection data determined based on the fact that the wafer presses and holds the first sensor;
s3, separating the bearing ring surface and the wafer, calculating the rotation angle of the flat edge according to the detection data and the target data, controlling the rotary adsorption device to adsorb the wafer and executing coarse rotation so as to rotate the flat edge to a state facing the calibration edge;
and S4, transversely moving the adjusting block to perform fine adjustment rotation on the wafer in the process of matching the calibration edge with the flat edge of the wafer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111653431.4A CN114334781A (en) | 2021-12-31 | 2021-12-31 | Positioning device and method for crystal orientation of wafer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115719722A (en) * | 2022-12-07 | 2023-02-28 | 深圳市纳设智能装备有限公司 | Positioning device, semiconductor equipment and positioning method of tray and wafer |
| CN116254599A (en) * | 2023-05-16 | 2023-06-13 | 南京原磊纳米材料有限公司 | Dynamic seal deposition device for epitaxy |
| CN117558671A (en) * | 2024-01-10 | 2024-02-13 | 厦门特仪科技有限公司 | Wafer edge inspection positioning equipment |
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2021
- 2021-12-31 CN CN202111653431.4A patent/CN114334781A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115719722A (en) * | 2022-12-07 | 2023-02-28 | 深圳市纳设智能装备有限公司 | Positioning device, semiconductor equipment and positioning method of tray and wafer |
| CN116254599A (en) * | 2023-05-16 | 2023-06-13 | 南京原磊纳米材料有限公司 | Dynamic seal deposition device for epitaxy |
| CN116254599B (en) * | 2023-05-16 | 2023-08-08 | 南京原磊纳米材料有限公司 | Dynamic seal deposition device for epitaxy |
| CN117558671A (en) * | 2024-01-10 | 2024-02-13 | 厦门特仪科技有限公司 | Wafer edge inspection positioning equipment |
| CN117558671B (en) * | 2024-01-10 | 2024-03-15 | 厦门特仪科技有限公司 | Wafer edge inspection positioning equipment |
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