CN114334704A - Gas conveying device, conveying method and semiconductor manufacturing equipment - Google Patents
Gas conveying device, conveying method and semiconductor manufacturing equipment Download PDFInfo
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- CN114334704A CN114334704A CN202011079890.1A CN202011079890A CN114334704A CN 114334704 A CN114334704 A CN 114334704A CN 202011079890 A CN202011079890 A CN 202011079890A CN 114334704 A CN114334704 A CN 114334704A
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Abstract
The invention discloses a gas conveying device, a gas conveying method and semiconductor manufacturing equipment, relates to the technical field of semiconductor equipment, and aims to solve the problem that gas is condensed on the way of passing to a process chamber in the semiconductor preparation process to pollute the process chamber or block a pipe orifice. The gas conveying device is used for conveying gas to the process cavity. The gas conveying device comprises a gas conveying pipeline, a first heating structure and a second heating structure. The first heating structure is arranged outside the gas transmission pipeline. The second heating structure is arranged inside the gas transmission pipeline. The semiconductor manufacturing equipment comprises the gas conveying device and a process chamber connected with the gas conveying device. The gas conveying device provided by the invention is used for preventing the problems of gas pipeline blockage and process chamber pollution caused by condensation in the process of conveying gas to the process chamber.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to a gas conveying device, a gas conveying method and semiconductor manufacturing equipment.
Background
In the semiconductor manufacturing process, many process steps require gas to be introduced into the process chamber. For example, in a vapor deposition process, a vaporizer is used to convert a liquid source into a gas that is introduced into a process chamber to form a thin film.
The gas converted in the gasifier is prone to condensation on the way to the process chamber, forming droplets and adhering to the bottom of the pipeline. As the number of droplets at the bottom of the pipe increases, the phenomenon that the mouth of the pipe is blocked, so that gas cannot pass through or part of liquid enters the cavity to pollute the cavity may occur.
Disclosure of Invention
The invention aims to provide a gas conveying device, a gas conveying method and semiconductor manufacturing equipment, which are used for preventing the phenomenon that gas converted in a gasifier is condensed on the way of leading to a process chamber to pollute the process chamber or block a pipe orifice.
In order to achieve the above object, the present invention provides a gas delivery apparatus for delivering a gas to a process chamber. The gas conveying device comprises a gas conveying pipeline, a first heating structure and a second heating structure. The first heating structure is arranged outside the gas transmission pipeline. The second heating structure is arranged inside the gas transmission pipeline.
Compared with the prior art, in the gas conveying device provided by the invention, the first heating structure is arranged outside the gas conveying pipeline, so that the first heating structure heats the gas conveying pipeline, the gas in the gas conveying pipeline is prevented from transferring heat to the gas conveying pipeline, the gas heat loss is reduced, the heat can be transferred to the gas in the gas conveying pipeline, and the gas is prevented from being condensed. And the second heating structure is arranged in the gas transmission pipeline, so that the gas can be heated in the gas transmission pipeline by utilizing the second heating structure. At this moment, first heating structure and second heating structure cooperation are used, not only can guarantee that the gas temperature in the gas transmission pipeline is higher than the gas boiling point that boiling point is the highest in this gas for gas is in stable gasification state. Therefore, the gas conveying device can reduce the heat loss of gas while heating the gas, thereby preventing the gas from condensing, and avoiding the gas from condensing to pollute a process cavity or block a pipe orifice in the process of conveying the gas to the process cavity by the gas conveying pipeline.
The invention also provides semiconductor manufacturing equipment which comprises a process chamber and the gas conveying device connected with the process chamber.
Compared with the prior art, the beneficial effects of the semiconductor manufacturing equipment provided by the invention are the same as the beneficial effects of the gas conveying device in the technical scheme, and the details are not repeated here.
The invention also provides a gas conveying method, which applies a gas conveying device with a gas conveying pipeline, a first heating structure and a second heating structure. The first heating structure is arranged outside the gas transmission pipeline, and the second heating structure is arranged inside the gas transmission pipeline. The gas delivery method comprises:
and controlling the first heating structure and the second heating structure to be in a heating state, so that the temperature of the gas in the gas transmission pipeline is higher than the condensation temperature of the gas.
Compared with the prior art, the beneficial effects of the gas conveying method provided by the invention are the same as those of the gas conveying device in the technical scheme, and the details are not repeated here.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic diagram of a semiconductor manufacturing apparatus according to the prior art;
FIG. 2 is a schematic diagram of a gas pipeline in the prior art;
FIG. 3 is a schematic structural view of a semiconductor manufacturing apparatus according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a control unit in the embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a gas pipeline in an embodiment of the invention;
FIG. 6 is a first schematic view of a support structure according to an embodiment of the present invention;
FIG. 7 is a first view illustrating a first state of use of the support structure according to the embodiment of the present invention;
FIG. 8 is a second state diagram illustrating the use of the support structure in accordance with an embodiment of the present invention;
FIG. 9 is a third view of a support structure in accordance with an embodiment of the present invention;
FIG. 10 is a first flow diagram of a gas delivery process according to an embodiment of the invention;
FIG. 11 is a flow chart two of a gas delivery process in an embodiment of the invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise. The meaning of "a number" is one or more unless specifically limited otherwise.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Fig. 1 is a schematic view showing a structure of a semiconductor manufacturing apparatus in the related art. As shown in fig. 1, the semiconductor manufacturing apparatus includes a vaporizer 11, a process chamber 15, and a gas delivery pipe 13 connected to the process chamber. Fig. 2 shows a schematic illustration of the gas line 13. As shown in fig. 2, the gas transmission pipeline 13 is externally wrapped with a first heating structure 14. In the process that the gas transmission pipeline 13 transmits gas to the process cavity 15, the first heating structure 14 works to heat the mixed gas in the gas transmission pipeline 13, so that the phenomenon that the mixed gas is radiated to the gas transmission pipeline 13 to cause partial gas condensation to generate liquid drops and particle pollutants, block the gas transmission pipeline 13 and pollute the process cavity is avoided. However, due to the heat conduction characteristic of heat, the heat is gradually reduced in the process of conducting the heat to the central position of the gas transmission pipeline 13, and the phenomenon of uneven heating is caused. So that the phenomenon of gas condensation, droplet formation and particle contamination can also occur. As semiconductor manufacturing processes become more sophisticated, these liquid droplets and particle contaminants have an increasingly negative impact on the process quality, and thus, the product quality is seriously affected.
To address the problem of condensation of the mixed gas in the gas delivery device, FIG. 3 illustrates a schematic diagram of a conductor manufacturing apparatus according to an embodiment of the present invention. As shown in fig. 3, the semiconductor apparatus includes a process chamber 27 and a gas delivery device connected to the process chamber 27. The gas conveying device can solve the problem of gas condensation in the prior art, and avoid the gas from condensing on the way that the gas conveying pipeline conveys gas to the process cavity 27 to pollute the process cavity 27 or block the pipe orifice. It should be understood that the process chamber 27 described above may be used for various deposition processes, dry etching processes, and the like, but is not limited thereto.
In practical applications, as shown in FIG. 3, the semiconductor manufacturing apparatus further includes a vaporizer 21 in communication with the gas delivery device. The vaporizer 21 may heat the liquid source to vaporize the liquid source and react with N2He and the like are mixed into mixed gas to enter the gas transmission pipeline 24. The gas delivery line 24 delivers a mixed gas (hereinafter simply referred to as a gas) to the process chamber 27. It should be understood that the gas referred to hereinafter may be a gas that is easily condensed, or may be a mixed gas containing a gas that is easily condensed.
As shown in fig. 3 and 5, the gas delivery apparatus of the embodiment of the present invention may be used to deliver gas to the process chamber 27, but is not limited thereto. The gas delivery device comprises a gas delivery conduit 24, a first heating structure 25 and a second heating structure 26. The first heating structure 25 is arranged outside the gas transmission pipeline 24, and the second heating structure 26 is arranged inside the gas transmission pipeline 24.
As shown in fig. 3 and 5, the vaporizer supplies gas to the gas transmission pipe 24, and the first heating structure 25 is used to heat the gas to prevent the gas from condensing. When the gas condensation still occurs in the condition that the first heating structure 25 is continuously heated, the second heating structure 26 is operated to ensure that the mixed gas in the gas transmission pipeline 24 is always delivered to the process chamber 27 in a gas state for subsequent processes.
As shown in fig. 3 and 5, as can be seen from the structure and the specific implementation process of the gas conveying device, the first heating structure 25 is disposed outside the gas conveying pipeline 24 to heat the gas conveying pipeline 24, so as to prevent the gas inside the gas conveying pipeline 24 from transferring heat to the gas conveying pipeline 24, reduce the heat loss of the gas, and also transfer heat to the gas inside the gas conveying pipeline 24 to prevent the gas from condensing. And because the second heating structure 26 is arranged inside the gas transmission pipeline 24, the gas can be heated inside the gas transmission pipeline 24. The second heating structure 26 is matched with the first heating structure 25, so that the temperature of the gas in the gas transmission pipeline 24 is higher than the boiling point of the gas with the highest boiling point in the gas, and the gas is in a stable gasification state. Therefore, the gas conveying device provided by the embodiment of the invention can reduce the heat loss of the gas while heating the gas, and prevent the gas from condensing to generate liquid drops and particle pollutants, so that the gas conveying pipeline 24 is blocked and the process cavity 27 is polluted.
As a possible implementation, as shown in fig. 5, the first heating structure 25 is a heating jacket wrapped around the outside of the gas transmission pipeline 24. The heating jacket is used for heating the gas transmission pipeline 24 from the outside and transmitting heat to the gas in the gas transmission pipeline 24 to heat the gas. The shape of the heating jacket may be square, circular, etc., and is not limited herein as long as the heating jacket is ensured to have a heating function, so that the heating jacket may be a heating element, a heating belt, or other structures capable of wrapping the outside of the gas transmission pipeline 24 to have a heating function.
As shown in fig. 5, the second heating structure 26 is a heating rod disposed along the axial direction of the gas delivery pipe 24. The heating rod is used for heating the gas in the gas transmission pipeline 24 from the inside of the gas transmission pipeline 24. The shape of the heating rod may be square or circular, and is not limited herein. The heating rod has a heating function, and thus the heating rod may be a heating element, a heating belt or other structure having a heating function provided along the axial direction of the gas delivery pipe 24.
In an alternative, as shown in fig. 6, the gas delivery device further comprises at least one support structure 30. The second heating structure 26 is provided on at least one support structure 30. The number of the support structures 30 may be one or plural. It should be understood that the support structure 30 herein is constructed of a material having thermal conductivity.
As shown in fig. 8, in the case where there is one support structure 30, the support structure 30 is used to heat the second heating structure 26. The length of the support structure 30 can be limited, so that the support structure 30 can support the second heating structure 26, and prevent the second heating structure 26 from bending and inclining, thereby causing uneven heating.
As shown in fig. 9, when there are two or more support structures 30, the two or more support structures 30 are arranged at a proper interval to ensure that the support structures 30 can support the second heating structure 26, so as to prevent the second heating structure 26 from bending and tilting, thereby causing uneven heating. It should be understood that fig. 5 is only a schematic illustration of the support structure 30, and the number of the specific support structures 30 is not limited to 5 in the figure.
In one example, as shown in fig. 6 and 7, each support structure 30 includes an outer ring 31, an inner ring 32, and a connecting member 33 connecting between the inner ring 32 and the outer ring 31. The outer ring 31 is connected with the inner wall of the gas transmission pipeline 24 in a matching way. The second heating structure 26 is disposed on the inner ring 32. Here, the inner ring 32 and the outer ring 31 may be circular or square, and are not limited as long as the second heating structure 26 is disposed along the axial direction of the gas transmission pipe 24.
As shown in fig. 7, when the inner ring 32 and the outer ring 31 are concentric, the second heating structure 26 is disposed along the axial direction of the gas transmission pipe 24 through the inner ring 32. The outer ring 31 is in mating connection with the inner wall of the gas transmission duct 24. In particular, the fitting connection may be an interference fit to ensure the tightness of the connection between the outer ring 31 and the gas transmission pipe 24, and prevent the support structure 30 from tilting, so as to ensure that the second heating structure 26 is stably arranged along the axial direction of the gas transmission pipe 24. A connecting member 33 is connected between the inner ring 32 and the outer ring 31, and serves to connect the inner ring 32 and the outer ring 31 and support them. The inner ring 32, the outer ring 31 and the connecting piece 33 can support the second heating structure 26, and the second heating structure is prevented from being inclined and bent.
As shown in fig. 7, the geometric center of the inner ring 32 coincides with the central axis of the second heating structure 26. The restriction on the geometric center of the inner ring 32 can enable the second heating structure 26 to be always arranged along the axial direction of the gas transmission pipeline 24, and the second heating structure 26 is guaranteed to uniformly heat the mixed gas in the gas transmission pipeline 24.
In an alternative, as shown in fig. 4, the gas delivery device further includes: a control unit for controlling the second heating structure 26 to be in a heating state such that the temperature of the gas in the gas transmission duct 24 is higher than the condensation temperature of the gas. It should be understood that the gas may be a mixture of a plurality of gases, or may be a single gas, depending on the specific process requirements, and is not limited thereto. When the gas is a mixed gas, the gas condensation temperature here means a gas having the highest condensation temperature in the mixed gas.
In one example, as shown in fig. 4, the control unit is also used to control the first heating structure 25 to be in a heating state. So as to prevent the loss of gas heat, ensure that the gas in the gas pipeline 24 is in a stable gas state, and prevent the gas from liquefying.
As shown in fig. 4, the temperature adjustment range of the control unit is 50 to 300 ℃. At this moment, the temperature control range of the temperature control unit is large, and when different mixed gases are heated, a high heating temperature can be set, so that the gas in the gas transmission channel can be rapidly heated. At this time, a large temperature difference exists between the first heating structure 25 and the mixed gas, so that the first heating structure 25 can supply heat to the mixed gas in the gas transmission pipeline 24, the probability of condensation is further reduced, and the semiconductor process quality is improved.
Of course, in order to reduce the thermal budget and heat loss in the semiconductor manufacturing process, the temperature heating range of the first heating structure 25 may be limited to 50-300 ℃. In this case, not only can the purpose of heating the gas in the gas transmission pipeline 24 be realized, but also resources can be saved and the cost can be reduced. It should be understood that the temperature control range may be 50 ℃, or may be 100 ℃, 200 ℃ or 300 ℃, depending on different process requirements and the condensation temperature of the gas delivered by the gas delivery pipeline 24.
In one example, as shown in fig. 4, the control unit is further configured to determine that the level signal in the gas transmission line 24 reaches a predetermined threshold before the second heating structure 26 is in the heating state. The predetermined threshold is set based on the experience of the skilled person, and is not limited herein, as long as the problem of too many liquid droplets formed by the liquefaction of the gas, which affect the gas delivery, and contaminate the process chamber 27 is avoided.
In an implementation, as shown in fig. 4, the gas is delivered from the gas delivery pipe 24 to the process chamber 27, and at this time, the control unit controls the first heating structure 25 to be in a heating state for heating the gas in the gas delivery pipe 24. In case the control unit determines that the level signal of the gas in the gas transmission line 24 reaches the preset threshold, the control unit controls the second heating structure 26 to start heating, so as to prevent further liquefaction of the gas in the gas transmission line 24, which may cause problems of blockage of the gas transmission line 24 and contamination of the process chamber 27. Under the control of the control unit, the control unit only controls the first heating structure 25 to work under the condition that the liquid level signal of the gas in the gas transmission pipeline 24 does not reach the preset threshold value, so that the thermal budget in the semiconductor manufacturing process can be reduced, the thermal loss is reduced, and the resources are saved.
In one example, as shown in fig. 4, the gas delivery device further includes a temperature sensor electrically connected to the control unit and a level sensor electrically connected to the control unit. The level sensor is used to detect a level signal in the gas line 24. It should be understood that the temperature sensor is used to detect the temperature of the gas in the gas line 24. The type and brand of the temperature sensor is not limited as long as the requirements of the embodiments of the present invention are met. The level sensor is used for detecting a level signal in the gas transmission pipeline 24. The liquid level sensor may be a narrow liquid level sensor or a broad liquid level sensor, for example. It should be understood that a liquid level sensor in a broad sense refers to a sensor or the like that can acquire a liquid level signal or an image associated with the liquid level. The sensor capable of acquiring the image can be an infrared image sensor and the like.
For example, as shown in FIG. 4, when the liquid level sensor is a liquid level sensor in a narrow sense, the liquid level sensor is disposed at a bottom portion near an end of the gas pipe 24 connected to the process chamber 27. The gas is transported upwards due to its lower density, and the liquefied droplets fall to the bottom of the gas transport pipe 24 and are driven by the gas flow to move towards the end of the gas transport pipe 24 connected to the process chamber 27. At this time, the liquid level sensor disposed at the bottom of the end of the gas transmission pipeline 24 connected to the process chamber 27 detects the height of the liquid and sends a liquid level signal to the control unit, so that the control unit controls the second heating structure 26 to heat in time when it is determined that the liquid level signal in the gas transmission pipeline 24 is greater than or equal to a preset threshold value. The problem of resource waste caused by the fact that the control unit controls the first heating structure 25 and the second heating structure 26 to work under the condition that a liquid level signal in the gas transmission pipeline 24 is smaller than a preset threshold value can be avoided through the arrangement of the liquid level sensor.
For another example, when the liquid level sensor is an infrared image sensor, as shown in fig. 4, the infrared image sensor can be used to identify whether liquid droplets are generated inside the gas transmission pipeline 24. An infrared camera or an infrared camera can be arranged on the infrared image sensor. The temperature difference between the liquid drops formed by the liquefaction of the gas and the gas in the gas transmission pipeline 24 can be clearly extracted by using an infrared camera or an infrared camera, and infrared image information can be generated. The control unit determines whether to control the second heating structure 26 to heat the gas transmission duct 24 by acquiring the infrared image information.
As shown in fig. 4, the control Unit may be one or more processors or controllers, such as a Central Processing Unit (CPU), a general purpose Processor (CPU), a Digital Signal Processor (DSP), an Application-Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA) or other Programmable logic device, a transistor logic device, a hardware component, or any combination thereof. Which may implement or perform the various illustrative logical blocks, modules, and circuits described in connection with the disclosure.
As shown in fig. 10, the embodiment of the present invention further provides a gas delivery method, which applies a gas delivery device having a gas delivery pipe 24, a first heating structure 25 and a second heating structure 26. The first heating structure 25 is arranged outside the gas transmission pipeline 24, and the second heating structure 26 is arranged inside the gas transmission pipeline 24. The gas delivery method comprises:
step 120: the control unit controls the first heating structure 25 and the second heating structure 26 to be in a heating state such that the temperature of the gas in the gas transmission duct 24 is higher than the condensation temperature of the gas.
Compared with the prior art, the beneficial effects of the gas conveying method provided by the embodiment of the invention are the same as those of the gas conveying device, and are not repeated herein.
As shown in fig. 10, in the case that the gas delivery apparatus further includes a temperature sensor, the control unit controls the first heating structure 25 and the second heating structure 26 to be in a heating state, so that the gas delivery method further includes:
step 100: the control unit obtains the temperature inside the gas transmission pipeline 24 provided by the temperature sensor.
Step 110: the control unit determines that the temperature inside the gas duct 24 is below the gas condensation temperature.
The control unit obtains the internal temperature of the gas transmission pipeline 24 provided by the temperature sensor, and determines that the internal temperature of the gas transmission pipeline 24 is lower than the gas condensation temperature, the control unit controls the first heating structure 25 and the second heating structure 26 to be in a heating state, so that the temperature of the gas in the gas transmission pipeline 24 is higher than the gas condensation temperature, the gas in the gas transmission pipeline 24 is ensured to be in a stable gas state, the problems of blockage of the gas transmission pipeline 24 and pollution of the process cavity 27 caused by gas condensation are prevented, and the semiconductor process quality is improved.
As shown in fig. 11, in the case that the control unit determines that the internal temperature of the gas transmission pipeline 24 is lower than the gas condensation temperature, the control unit controls the first heating structure 25 and the second heating structure 26 to be in the heating state, so that the gas temperature in the gas transmission pipeline 24 is higher than the gas condensation temperature specifically includes:
step 1201: the control unit controls the first heating structure 25 to be in a heating state.
Under the condition that the control unit determines that the internal temperature of the gas transmission pipeline 24 is lower than the gas condensation temperature, the control unit firstly controls the first heating structure 25 to work, so that the gas in the gas transmission pipeline 24 is heated, the loss of the heat of the gas is reduced, and the gas is prevented from being liquefied.
Step 1202: the control unit obtains a level signal in the gas line 24 provided by the level sensor. For determining the degree of liquefaction of the gas and thus whether to control the operation of the second heating structure 26.
Step 1203: the control unit determines that the level signal in the gas line 24 is greater than or equal to a preset threshold.
Step 1204: the control unit controls the second heating structure 26 to be in a heating state. In the foregoing description of embodiments, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A gas delivery device for delivering a gas to a process chamber; the gas delivery device includes:
a gas pipeline;
the first heating structure is arranged outside the gas transmission pipeline;
and the second heating structure is arranged inside the gas transmission pipeline.
2. The gas delivery device of claim 1, wherein the first heating structure is a heating jacket wrapped around the exterior of the gas delivery conduit; and/or the presence of a gas in the gas,
the second heating structure is a heating rod arranged along the axial direction of the gas transmission pipeline.
3. The gas delivery device of claim 1, further comprising at least one support structure; the second heating structure is provided on the at least one support structure.
4. The gas delivery device according to claim 3, wherein each of the support structures comprises an outer ring, an inner ring, and a connector connecting between the inner ring and the outer ring; the outer circular ring is connected with the inner wall of the gas transmission pipeline in a matching way; the second heating structure is arranged on the inner circular ring; wherein the content of the first and second substances,
the geometric center of the circular ring in the supporting structure coincides with the central axis of the second heating structure.
5. The gas delivery device according to any one of claims 1-4, further comprising: and the control unit is used for controlling the second heating structure to be in a heating state, so that the temperature of the gas in the gas transmission pipeline is higher than the condensation temperature of the gas.
6. The gas delivery device according to claim 5, wherein the control unit is further configured to control the first heating structure to be in a heating state; and/or the presence of a gas in the gas,
the control unit is further used for determining that a liquid level signal in the gas transmission pipeline is greater than or equal to a preset threshold value before the second heating structure is in a heating state; and/or the presence of a gas in the gas,
the temperature adjusting range of the control unit is 50-300 ℃.
7. The gas delivery device of claim 5, further comprising: the temperature sensor is electrically connected with the control unit, and the liquid level sensor is electrically connected with the control unit; the liquid level sensor is used for detecting a liquid level signal in the gas transmission pipeline.
8. A semiconductor manufacturing apparatus comprising a process chamber and at least one gas delivery device as claimed in any one of claims 1 to 7 connected to the process chamber.
9. A gas delivery method is characterized in that a gas delivery device with a gas delivery pipeline, a first heating structure and a second heating structure is applied; the first heating structure is arranged outside the gas transmission pipeline, and the second heating structure is arranged inside the gas transmission pipeline; the gas delivery method comprises:
and controlling the first heating structure and the second heating structure to be in a heating state, so that the temperature of the gas in the gas transmission pipeline is higher than the condensation temperature of the gas.
10. The gas delivery method of claim 9, wherein the gas delivery apparatus further comprises a temperature sensor, and wherein the gas delivery apparatus further comprises, before controlling the first heating structure and the second heating structure to be in a heating state such that the temperature of the gas in the gas delivery pipeline is higher than the condensation temperature of the gas:
acquiring the internal temperature of the gas transmission pipeline provided by the temperature sensor;
determining that the internal temperature of the gas transmission pipeline is lower than the gas condensation temperature;
and/or the presence of a gas in the gas,
the gas delivery device further comprises a liquid level sensor, and the controlling the first heating structure and the second heating structure to be in a heating state so that the temperature of the gas in the gas delivery pipeline is higher than the condensation temperature of the gas comprises:
controlling the first heating structure to be in a heating state;
acquiring a liquid level signal in the gas transmission pipeline provided by a liquid level sensor;
determining that a liquid level signal in the gas transmission pipeline is greater than or equal to a preset threshold value;
and controlling the second heating structure to be in a heating state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202011079890.1A CN114334704A (en) | 2020-10-10 | 2020-10-10 | Gas conveying device, conveying method and semiconductor manufacturing equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011079890.1A CN114334704A (en) | 2020-10-10 | 2020-10-10 | Gas conveying device, conveying method and semiconductor manufacturing equipment |
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| CN114334704A true CN114334704A (en) | 2022-04-12 |
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| CN202011079890.1A Pending CN114334704A (en) | 2020-10-10 | 2020-10-10 | Gas conveying device, conveying method and semiconductor manufacturing equipment |
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