CN114325931B - Method for manufacturing silicon optical device, silicon optical device and photonic integrated circuit - Google Patents
Method for manufacturing silicon optical device, silicon optical device and photonic integrated circuit Download PDFInfo
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
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Abstract
The application discloses a manufacturing method of a silicon optical device, the silicon optical device and a photon integrated circuit, wherein the silicon optical device comprises two input waveguides, two output waveguides and a rectangular module formed by a plurality of pixel blocks, the input waveguides and the output waveguides are oppositely arranged at two sides of the rectangular module, the rectangular module is used for processing signals input by the input waveguides, and the manufacturing method of the silicon optical device comprises the following steps: acquiring a target transmission matrix; inputting the target transmission matrix into a structure generation model for prediction to obtain a two-dimensional code structure; and carrying out etching treatment on the rectangular module according to the two-dimensional code structure. According to the embodiment of the application, the two-dimensional code structure corresponding to the target transmission matrix is obtained through the structure generation model, and the rectangular module is etched according to the two-dimensional code structure, so that the silicon optical device with a specific function is obtained, meanwhile, the time and resources spent by the simulation device are reduced, and the design and manufacturing period of the silicon optical device can be effectively shortened.
Description
Technical Field
The present application relates to the field of optical devices, and in particular, to a method for manufacturing a silicon optical device, and a photonic integrated circuit.
Background
Along with the progress of technology, the processing demand of big data is rapidly increased year by year, and the photonic integrated circuit can solve the problems of high energy consumption and low data transmission efficiency of the integrated circuit according to the thought of optical electrification, so that the photonic integrated circuit is widely applied in the field of optical communication.
However, in the related art, the photonic integrated circuit is complex in design, and the device structures of different functions are greatly different, so that a great amount of time and resources are required to be simulated to simulate and set a device with a specific function.
Disclosure of Invention
The present application aims to solve at least one of the technical problems existing in the prior art. Therefore, the application provides a manufacturing method of a silicon optical device, which can improve the processing rate of the device and save the processing time.
According to the manufacturing method of the silicon optical device of the embodiment of the first aspect of the application, the silicon optical device comprises two input waveguides, two output waveguides and a rectangular module composed of a plurality of pixel blocks, wherein the input waveguides and the output waveguides are arranged on two sides of the rectangular module, and the rectangular module is used for processing signals input by the input waveguides;
the manufacturing method of the silicon optical device comprises the following steps:
acquiring a target transmission matrix;
inputting the target transmission matrix into a structure generation model for prediction to obtain a two-dimensional code structure;
and carrying out etching treatment on the rectangular module according to the two-dimensional code structure.
The manufacturing method of the silicon optical device has at least the following beneficial effects: and the two-dimensional code structure corresponding to the target transmission matrix is obtained through the structure generation model, and the rectangular module is etched according to the two-dimensional code structure, so that the silicon optical device with a specific function is obtained, meanwhile, the time and the resources spent by the simulation device are reduced, and the design and the manufacturing period of the silicon optical device can be effectively shortened.
According to some embodiments of the present application, before the target transmission matrix is input into a structure generation model to be predicted to obtain a two-dimensional code structure, the method further includes generating the structure generation model, and specifically includes: carrying out prediction processing on the predicted two-dimensional code structure through a pre-training model to obtain a predicted transmission matrix; acquiring a loss function according to a target transmission matrix and the prediction transmission matrix; calculating the loss function to obtain a loss value; and training the pre-training model according to the loss value to obtain the structure generation model.
According to some embodiments of the application, the training the pre-training model according to the loss value to obtain a structure generating model includes: taking the loss value as a counter-propagation quantity, and adjusting model parameters of the pre-training model to train the pre-training model to obtain the structure generation model; wherein the model parameters include weight values.
According to some embodiments of the application, the etching processing of the rectangular module according to the two-dimensional code structure includes: acquiring the two-dimensional code structure; and etching the pixel block corresponding to the rectangular module according to the two-dimensional code structure.
According to some embodiments of the present application, the etching processing of the pixel block corresponding to the rectangular module according to the two-dimensional code structure includes: if the code value of the two-dimensional code structure is 1, etching the corresponding pixel block to form a groove, and filling the groove; and if the code value of the two-dimensional code structure is 0, the corresponding pixel block is not subjected to etching treatment.
A silicon optical device according to an embodiment of the second aspect of the present application includes: a rectangular module including a plurality of pixel blocks; the rectangular module is used for processing an input signal, and a groove is formed in the center of the pixel block corresponding to the two-dimensional code structure; the input waveguides are connected with one side of the rectangular module and are used for receiving the input signals; and the output waveguides are connected with one side, far away from the input waveguides, of the rectangular module and are used for outputting the input signals processed by the rectangular module.
The silicon optical device provided by the embodiment of the application has at least the following beneficial effects: by arranging the rectangular module, the input signal can be processed, so that a target signal is obtained, the transmission performance of the silicon optical device is improved, the volume of the silicon optical device is reduced, and the practical application is facilitated.
According to some embodiments of the application, the recess is cylindrical, and a silica material is filled in the recess.
According to some embodiments of the application, the grooves have a diameter of 90nm.
According to some embodiments of the application, the rectangular module is 3 μm long and 3 μm wide, and the rectangular module is composed of 25 identical blocks of pixels.
A photonic integrated circuit according to an embodiment of the second aspect of the present application comprises a silicon optical device according to an embodiment of the second aspect of the present application described above.
The photon integrated circuit according to the embodiment of the application has at least the following beneficial effects: through setting up above-mentioned silicon optical device, can improve signal transmission's speed, reduce the consumption of energy, can realize different functions according to the demand simultaneously, improved photon integrated circuit's flexibility.
Additional aspects and advantages of the application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application.
Drawings
The application is further described with reference to the accompanying drawings and examples, in which:
FIG. 1 is a schematic flow chart of a method for fabricating a silicon optical device according to an embodiment of the present application;
FIG. 2 is a schematic diagram of a silicon optical device according to an embodiment of the present application;
FIGS. 3 a-3 d are schematic views showing another structure of a silicon optical device according to an embodiment of the present application;
FIG. 4 is a schematic flow chart of a method for fabricating a silicon optical device according to an embodiment of the present application;
FIG. 5 is a flowchart illustrating the step S300 in FIG. 1;
FIG. 6 is a flowchart illustrating the step S320 in FIG. 5;
fig. 7 is a schematic diagram of an application of a silicon optical device according to an embodiment of the present application.
Reference numerals:
an input waveguide 100, a first input waveguide 110, a second input waveguide 120, an output waveguide 200, a first output waveguide 210, a second output waveguide 220, a rectangular module 300, a pixel block 310, a recess 311.
Detailed Description
Embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the application.
In the description of the present application, it should be understood that references to orientation descriptions such as upper, lower, front, rear, left, right, etc. are based on the orientation or positional relationship shown in the drawings, are merely for convenience of description of the present application and to simplify the description, and do not indicate or imply that the apparatus or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the present application.
In the description of the present application, the meaning of a number is one or more, the meaning of a number is two or more, and greater than, less than, exceeding, etc. are understood to exclude the present number, and the meaning of a number is understood to include the present number. The description of the first and second is for the purpose of distinguishing between technical features only and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present application, unless explicitly defined otherwise, terms such as arrangement, installation, connection, etc. should be construed broadly and the specific meaning of the terms in the present application can be reasonably determined by a person skilled in the art in combination with the specific contents of the technical scheme.
In the description of the present application, the descriptions of the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
A method of manufacturing a silicon optical device according to an embodiment of the present application is described below with reference to fig. 1 to 3 d.
As shown in fig. 1 and 2, the silicon optical device includes two input waveguides 100, two output waveguides 200, and a rectangular module 300 composed of a plurality of pixel blocks 310, the input waveguides 100 and the output waveguides 200 being disposed at both sides of the rectangular module 300 opposite to each other, the rectangular module 300 being for processing signals inputted from the input waveguides 100.
The manufacturing method of the silicon optical device comprises the following steps:
step S100: acquiring a target transmission matrix;
step S200: inputting the target transmission matrix into a structure generation model for prediction to obtain a two-dimensional code structure;
step S300: and carrying out etching treatment on the rectangular module according to the two-dimensional code structure.
Specifically, as shown in fig. 2, the silicon optical device includes an input waveguide 100, an output waveguide 200, and a rectangular module 300. The rectangular module 300 has a substantially plate-like structure and is composed of a plurality of pixel blocks 310 having the same size and shape, and when a signal passes through the rectangular module 300, a linear calculation is performed, thereby outputting a signal required by a user. The two input waveguides 100 are defined as a first input waveguide 110, a second input waveguide 120, respectively, and the two output waveguides 200 are defined as a first output waveguide 210, a second output waveguide 220, respectively. The optical signals are input into the silicon optical device from the first input waveguide 110 and the second input waveguide 120, and after interacting with the rectangular module 300, the modulated optical signals are output from the first output waveguide 210 and the second output waveguide 220.
By varying the rectangular module 300, the output signal can be modulated. The regulation of the phase and replication of the input signals by the matrix module is defined as a transmission matrix T:
wherein a is mn A magnitude change factor for an input signal from the input waveguide 100 to the output waveguide 200,Is the value of the phase shift of the input signal from the input waveguide 100 to the output waveguide 200.
The input signal of the first input waveguide 110 is defined as E I1 Defining the input signal of the second input waveguide 120 as E I2 Defining the output signal of the first output waveguide 210 as E O1 Defining the output signal of the second output waveguide 220 as E O2 Input signal E I1 And output signal E I2 The relation of (2) is:
the user can change the transmission matrix T of the transmission module by changing the etching condition of the pixel block 310 in the rectangular module 300, thereby realizing the transmission and operation of the input signal and obtaining the required signal.
As shown in fig. 1, when a silicon optical device is manufactured, a target transmission matrix is acquired according to a user signal processing requirement, and the target transmission matrix is input into a structure generation model, wherein the corresponding relation between the transmission matrix and a two-dimensional code structure is stored in the structure generation model. The structure generation model predicts according to the target transmission matrix, so that a corresponding two-dimensional code structure is obtained, and the rectangular module 300 is etched according to the two-dimensional code structure, so that the target silicon optical device is obtained.
For example, when using silicon optical devices as cross waveguides, the target transmission matrixInputting the target transmission matrixAnd (3) entering a structure generation model to obtain a corresponding two-dimensional code structure, and etching the region corresponding to the rectangular module 300 according to the two-dimensional code structure to obtain a two-dimensional code pattern shown in fig. 3 a. The silicon optical device can exchange signals after the signals input from the input waveguides pass through the rectangular module 300, that is, the signals input from the first input waveguide 110 are output by the second output waveguide 220, and the signals input from the second input waveguide 120 are output by the first output waveguide 210.
When the silicon optical device is used as the phase shifter, the target transmission matrixThe target transmission matrix is input into a structure generation model to obtain a corresponding two-dimensional code structure, and then the region corresponding to the rectangular module 300 is etched according to the two-dimensional code structure to obtain a two-dimensional code pattern as shown in fig. 3 b. The amplitude and transmission path of the signal input from the input waveguide 100 through the rectangular module 300 remain unchanged, but the phase of the signal output from the output waveguide 200 changes.
When the silicon optical device is used as an exclusive or gate, the target transmission matrixThe target transmission matrix is input into a structure generation model to obtain a corresponding two-dimensional code structure, and then the region corresponding to the rectangular module 300 is etched according to the two-dimensional code structure to obtain a two-dimensional code pattern as shown in fig. 3 c. When the input signal of the first input waveguide 110, the input signal of the second input waveguide 120, or the input signal of the first input waveguide 110, the input signal of the second input waveguide 120, of the silicon optical device is 1, the signal output by the first output waveguide 210 is 1; when the input signals of the first input waveguide 110 and the second input waveguide 120 are 0 or 1, the signal output by the first output waveguide 210 is 0.
When the silicon optical device is used as any unitary matrix core, the target transmission matrixThe target transmission matrix is input into a structure generation model to obtain a corresponding two-dimensional code structure, and then the region corresponding to the rectangular module 300 is etched according to the two-dimensional code structure to obtain a two-dimensional code pattern as shown in fig. 3 d. When the input signal passes through the silicon optical matrix, interference occurs, and the amplitude and the phase of the output light are modulated.
According to the manufacturing method of the silicon optical device, the two-dimensional code structure corresponding to the target transmission matrix is obtained through the structure generation model, and the rectangular module 300 is etched according to the two-dimensional code structure, so that the silicon optical device with a specific function is obtained, meanwhile, the time and resources spent by the simulation device are reduced, and the design and manufacturing cycle of the silicon optical device can be effectively shortened.
In some embodiments of the present application, as shown in fig. 4, the method of fabricating a silicon optical device further includes generating a structure generation model, including, but not limited to, the steps of:
step S400: carrying out prediction processing on the predicted two-dimensional code structure through a pre-training model to obtain a predicted transmission matrix;
step S500: obtaining a loss function according to the target transmission matrix and the predicted transmission matrix;
step S600: the loss function is calculated to obtain a loss value.
Step S700: and training the pre-training model according to the loss value to obtain a structure generation model.
Specifically, the pre-training model stores some corresponding relations between the transmission matrix and the two-dimensional code structure, and the pre-training model obtains a predicted two-dimensional code structure according to the target transmission matrix and predicts the predicted two-dimensional code structure, thereby obtaining the predicted transmission matrix. And obtaining average absolute error values of the target transmission matrix and the prediction transmission matrix, thereby obtaining a loss function. And then, carrying out corresponding calculation on the loss function, thereby obtaining a loss value. And finally, training the pre-training model according to the loss value to optimize the pre-training model towards a new target, so that the pre-training model is trained by adjusting parameters of the pre-training model, and a trained structure generating model is obtained, wherein the structure generating model is used for generating a corresponding two-dimensional code structure according to the target transmission matrix.
Through the trained structure generation model, a user can provide a corresponding two-dimensional code structure according to an arbitrarily designated target transmission matrix without other extra values, and the design efficiency of the silicon optical device can be effectively improved; the structure generation model has stronger generalization capability, and huge data samples do not need to be prepared in advance.
In some embodiments of the application, step S700: training the pre-training model according to the loss value to obtain a structure generation model, wherein the training comprises the following steps: taking the loss value as a counter-propagation quantity, and adjusting model parameters of the pre-training model to train the pre-training model to obtain a structure generation model; wherein the model parameters comprise weight values.
Specifically, after obtaining a loss function according to the target transmission matrix and the predicted transmission matrix, derivative calculation is performed on the loss function, so as to obtain a loss value.
Wherein,for the loss value, L is a loss function, T' is a prediction transmission matrix, Q is a prediction two-dimensional code structure, and w is a weight value.
Due to the loss function l=f 3 (T, T'), wherein T is a target transmission matrix; predictive transmission matrix T' =f 2 (Q), predicted two-dimensional code structure q=f 1 (T) and, therefore,for the explicit function, we can get, < i > according to the way of the bias derivative>As a hidden function, a square can be simulated by reverseObtained (I)>The display function can be obtained according to the deviation derivation mode.
Loss valueThe model parameters are adjusted as back-propagation quantities, wherein the model parameters comprise weight values w,
wherein, alpha is the learning rate, and the learning rate alpha can be set according to the requirement.
And adjusting the weight value through the loss value, so that the pre-training model is updated and iterated aiming at different target transmission matrixes, and a structure generation model is obtained. The structure generation model is trained without preparing a large number of training data samples in advance, and the corresponding two-dimensional code structure can be rapidly predicted according to the target transmission matrix after a certain number of iterations, so that the design time of the silicon optical device is reduced.
In some embodiments of the present application, as shown in fig. 5, step S300: the rectangular module 300 is etched according to the two-dimensional code structure, including but not limited to the following steps:
step S310: acquiring a two-dimensional code structure;
step S320: and etching the corresponding pixel blocks in the rectangular module according to the two-dimensional code structure.
Specifically, after the target transmission matrix is input into the structure generation model, the structure generation model outputs a corresponding two-dimensional code structure. And etching the pixel blocks 310 in the rectangular module 300 according to the two-dimensional code structure, thereby obtaining the rectangular module 300 with the two-dimensional code pattern.
In some embodiments of the present application, as shown in fig. 6, step S320: the etching process is performed on the corresponding pixel block 310 in the rectangular module 300 according to the two-dimensional code structure, including but not limited to the following steps:
step S321: if the code value of the two-dimensional code structure is 1, etching the corresponding pixel block to form a groove, and filling the groove;
step S322: if the code value of the two-dimensional code structure is 0, the corresponding pixel block is not etched.
Specifically, a two-dimensional code structure corresponding to a target transmission matrix is obtained through a structure generation model, wherein the two-dimensional code structure comprises a plurality of characters with code values of 0 or 1. When the code value of the two-dimensional code structure is 1, etching the pixel block 310 corresponding to the code value in the rectangular module 300 to form a groove 311, and filling the groove 311, wherein the groove 311 may be a cylindrical groove, and the filling material in the groove 311 may be silicon dioxide. When the code value of the two-dimensional code structure is 0, the pixel block 310 corresponding to the code value in the rectangular module 300 is not etched. By the above operation, the same pattern as the two-dimensional code structure can be formed on the rectangular module 300. Whether the pixel block 310 in the rectangular module 300 is etched or not affects the transmission matrix, so each two-dimensional code structure corresponds to one transmission matrix, and a corresponding transmission function can be realized by selecting an appropriate transmission matrix.
In some embodiments, the present application also proposes a silicon optical device, as shown in fig. 2, comprising a rectangular module 300, two input waveguides 100 and two output waveguides 200. The rectangular module 300 includes a plurality of pixel blocks 310; the rectangular module 300 is used for processing an input signal, and a groove 311 is formed in the center of a pixel block 310 corresponding to the two-dimensional code structure of the rectangular module 300; the input waveguide 100 is connected to one side of the rectangular module 300 for receiving an input signal; the output waveguide 200 is connected to a side of the rectangular module 300 remote from the input waveguide 100, and is used for outputting an input signal processed by the rectangular module 300.
Specifically, the rectangular module 300 is approximately in a plate structure and is composed of a plurality of pixel blocks 310 with the same size and shape, and the pixel blocks 310 corresponding to the code value of 1 in the rectangular module 300 and the two-dimensional code structure are etched, so that a groove 311 is formed in the center of the pixel block 310; the pixel block 310 corresponding to the code value of 0 in the two-dimensional code structure is not etched, so that a pattern corresponding to the two-dimensional code structure is formed on the rectangular module 300. When the signal passes through the rectangular module 300, a corresponding linear calculation is performed, thereby outputting a signal required by the user. The two input waveguides 100 are defined as a first input waveguide 110, a second input waveguide 120, respectively, and the two output waveguides 200 are defined as a first output waveguide 210, a second output waveguide 220, respectively. The first input waveguide 110 and the second input waveguide 120 are connected to one side of the rectangular module 300, and the first output waveguide 210 and the second output waveguide 220 are connected to the other side of the rectangular module 300, wherein the first input waveguide 110 and the second input waveguide 120 are disposed opposite to the first output waveguide 210 and the second output waveguide 220. The first input waveguide 110 and the second input waveguide 120 input optical signals into the silicon optical device, and after the optical signals interact with the rectangular module 300, the modulated optical signals are output by the first output waveguide 210 and the second output waveguide 220.
According to the silicon optical device provided by the embodiment of the application, the rectangular module 300 is arranged, so that the input signal can be processed, the target signal can be obtained, the transmission performance of the silicon optical device is improved, the volume of the silicon optical device is reduced, and the silicon optical device is convenient for practical application.
In some embodiments of the present application, the recess 311 is cylindrical, and a silicon dioxide material is filled in the recess 311.
In some embodiments of the present application, the size of the recess 311 is smaller than the size of the pixel block 310. The size of the groove 311 is smaller than that of the single pixel block 310 in the transmission module, and in general, the difference between the size of the groove 311 and the size of the pixel block 310 is greater than or equal to 30nm, so that the groove 311 can be conveniently processed, and the processing rate of the silicon optical device can be improved.
In some embodiments of the application, the size of the pixel block 310 is less than one third of the input wavelength. Specifically, the size of the pixel blocks 310 in the transmission module may be set according to the input wavelength of the silicon optical device, and typically, the size of the pixel blocks 310 is smaller than one third of the input wavelength, and the size of the rectangular module 300 is set according to the number and arrangement manner of the set pixel blocks 310. For example, 25 square pixel blocks 310 having a side length of 120nm are provided, and the pixel blocks 310 are arranged in a 5×5 arrangement, thereby obtaining a rectangular module 300 having a length and a width of 3 μm. For convenience in processing, the diameter of the groove 311 formed in the center of the pixel block 310 is 90nm.
In other embodiments, the 2×2 port silicon optical device provided by the present application may further implement an m×n transmission matrix core of any higher order through cascading, and may be used for constructing a weight matrix of an optical neural network. For example, a 3×3 transmission matrix core is implemented by cascading 3 silicon optical devices with 2×2 ports, and as shown in fig. 7, the transmission matrix core is:
each transmission coefficient in the transmission matrix core can be obtained from the target transmission matrices T (1), T (2), T (3) of the three 2×2 port silicon optical devices and the waveguide phase shift value phi corresponding to the device length L. By means of path tracking, any one output port I can be calculated m To output port O n Is used for the transmission coefficient of the transmission coefficient(s). For example, by a first input port I 1 To the first output port O 1 The transmission coefficient of (2) isFrom a first input port I 1 To a second output port O 2 Is +.>The remaining cases are not described in detail herein. Any high-order matrix core can be obtained by cascading a plurality of silicon optical devices with 2 multiplied by 2 ports, and the high-order matrix core can be used for replacing a weight matrix of a deep neural network to construct an optical network, so that the calculation and operation speed of the optical network can be increased.
In some embodiments, the application also provides a photonic integrated circuit, which comprises the silicon optical device in the above embodiments of the application.
According to the photon integrated circuit provided by the embodiment of the application, by arranging the silicon optical device, the signal transmission rate can be improved, the energy consumption can be reduced, different functions can be realized according to requirements, and the flexibility of the photon integrated circuit is improved.
The embodiments of the present application have been described in detail with reference to the accompanying drawings, but the present application is not limited to the above embodiments, and various changes can be made within the knowledge of one of ordinary skill in the art without departing from the spirit of the present application. Furthermore, embodiments of the application and features of the embodiments may be combined with each other without conflict.
Claims (5)
1. The manufacturing method of the silicon optical device is characterized in that the silicon optical device comprises two input waveguides, two output waveguides and a rectangular module composed of a plurality of pixel blocks, wherein the input waveguides and the output waveguides are arranged on two sides of the rectangular module oppositely, and the rectangular module is used for processing signals input by the input waveguides;
the manufacturing method of the silicon optical device comprises the following steps:
acquiring a target transmission matrix;
inputting the target transmission matrix into a structure generation model for prediction to obtain a two-dimensional code structure;
and carrying out etching treatment on the rectangular module according to the two-dimensional code structure.
2. The method for manufacturing a silicon optical device according to claim 1, wherein before the target transmission matrix is input into a structure generation model for prediction to obtain a two-dimensional code structure, the method further comprises generating the structure generation model, specifically comprising:
carrying out prediction processing on the predicted two-dimensional code structure through a pre-training model to obtain a predicted transmission matrix;
acquiring a loss function according to a target transmission matrix and the prediction transmission matrix;
calculating the loss function to obtain a loss value;
and training the pre-training model according to the loss value to obtain the structure generation model.
3. The method of manufacturing a silicon optical device according to claim 2, wherein the training the pre-training model according to the loss value to obtain a structure generation model comprises:
taking the loss value as a counter-propagation quantity, and adjusting model parameters of the pre-training model to train the pre-training model to obtain the structure generation model; wherein the model parameters include weight values.
4. The method for manufacturing a silicon optical device according to claim 1, wherein the etching the rectangular module according to the two-dimensional code structure comprises:
acquiring the two-dimensional code structure;
and etching the pixel block corresponding to the rectangular module according to the two-dimensional code structure.
5. The method for manufacturing a silicon optical device according to claim 4, wherein the etching the pixel block corresponding to the rectangular module according to the two-dimensional code structure includes:
if the code value of the two-dimensional code structure is 1, etching the corresponding pixel block to form a groove, and filling the groove;
and if the code value of the two-dimensional code structure is 0, the corresponding pixel block is not subjected to etching treatment.
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