CN114325315A

CN114325315A - Chip aging compensation method and device, SOC chip and electronic equipment

Info

Publication number: CN114325315A
Application number: CN202111597029.9A
Authority: CN
Inventors: 金军贵; 张书磊
Original assignee: Haiguang Information Technology Co Ltd
Current assignee: Haiguang Information Technology Co Ltd
Priority date: 2021-12-24
Filing date: 2021-12-24
Publication date: 2022-04-12

Abstract

The application relates to a chip aging compensation method and device, an SOC chip and electronic equipment, and belongs to the technical field of integrated circuits. The method comprises the steps that a voltage measurement module is used for measuring a measurement value of a preset reference voltage at the current moment; obtaining the aging degree of the voltage measuring module based on the measured value at the current moment and a preset first rule; obtaining the aging degree of the critical path based on the aging degree of the voltage measuring module and a preset mapping relation representing the aging correlation between the voltage measuring module and the critical path in the chip; obtaining an aging compensation value corresponding to the aging degree of the critical path based on the aging degree of the critical path and a preset second rule; and adjusting the power supply voltage or the working frequency of the chip according to the aging compensation value to perform aging compensation. According to the method and the device, aging detection measurement can be carried out at any time according to needs, and the power supply voltage or the working frequency of the chip is compensated, so that the optimal energy efficiency ratio is ensured.

Description

Chip aging compensation method and device, SOC chip and electronic equipment

Technical Field

The application belongs to the technical field of integrated circuits, and particularly relates to a chip aging compensation method and device, an SOC chip and electronic equipment.

Background

As the size of a Semiconductor device (such as a Metal Oxide Semiconductor (MOS) transistor) is reduced to ultra-deep submicron and nanometer sizes, the aging of the Semiconductor device has more and more significant influence on a large-scale integrated circuit chip, and the aging of the Semiconductor device increases a threshold voltage (Vth) and reduces a channel current (Ids), so that the driving capability of a circuit unit is reduced, the time delay is increased, and the operating speed (the highest operating frequency (Fmax)) of the whole chip is finally reduced. In order to enable the chip to still meet the better energy efficiency ratio along with the increase of the working time, the working state of the chip needs to be adjusted in time by adopting a proper method according to the aging condition of the chip, so that the chip always works in the better state along with the increase of the working time.

At present, in order to enable a chip to work in a better state all the time along with the increase of working time, corresponding allowance is added to the power supply voltage of the chip in advance at the initial working stage of the chip, and the chip can work normally without downtime within a corresponding period. However, in the initial stage and the middle stage of the operation of the chip, when the chip is not aged and decayed, the increased margin of the power supply voltage is redundant, extra power consumption is caused, the chip cannot achieve the optimal energy efficiency ratio, and the performance of the whole system is also influenced.

Disclosure of Invention

In view of this, an object of the present application is to provide a method and an apparatus for compensating chip aging, an SOC chip, and an electronic device, so as to solve the problem that the existing compensation scheme adds extra margin to the power supply voltage of the chip at the initial stage, which may cause extra power consumption, so that the chip may not achieve the optimal energy efficiency ratio, and may also affect the performance of the whole system.

The embodiment of the application is realized as follows:

in a first aspect, an embodiment of the present application provides a chip aging compensation method, including: measuring a measurement value at the current moment corresponding to a preset reference voltage by using a voltage measurement module, wherein the voltage measurement module is based on a ring oscillator; obtaining the aging degree of the voltage measuring module based on the measured value at the current moment and a preset first rule; obtaining the aging degree of the critical path based on the aging degree of the voltage measurement module and a preset mapping relation representing the aging correlation of the voltage measurement module and the critical path in the chip; obtaining an aging compensation value corresponding to the aging degree of the key path based on the aging degree of the key path and a preset second rule; and adjusting the power supply voltage or the working frequency of the chip according to the aging compensation value to perform aging compensation. According to the embodiment of the application, the aging detection and measurement can be carried out at any time as required to obtain the aging compensation value corresponding to the aging degree of the critical path, the power supply voltage or the working frequency of the chip is compensated, the power supply voltage of the chip can be adjusted along with the aging condition, unnecessary allowance is not required to be added to the power supply voltage of the chip at the initial stage in order to avoid downtime caused by aging, and therefore the optimal energy efficiency ratio is guaranteed while the performance deterioration of the chip caused by aging is improved.

With reference to one possible implementation manner of the embodiment of the first aspect, the preset first rule includes a first characteristic equation that characterizes a relationship among the power supply voltage, the measured value, and the temperature of the voltage measurement module at different aging times, and the method further includes: acquiring the environmental temperature at the current moment; correspondingly, obtaining the aging degree of the voltage measurement module based on the measurement value at the current moment and a preset first rule, includes: determining an initial measurement value corresponding to the preset reference voltage at the initial moment under the ambient temperature based on the first characteristic equation; acquiring the measured value variation of the measured value at the current moment and the measured value variation of the initial measured value at the initial moment; if the measured value variation exceeds a preset threshold value, acquiring a voltage value corresponding to a specified target measured value under the ambient temperature based on the first characteristic equation, and acquiring a voltage variation of the voltage value corresponding to the specified target measured value and an initial voltage value at an initial moment, wherein the voltage variation represents the aging degree of the voltage measurement module. In the embodiment of the application, when the aging degree of the voltage measurement module is considered, the temperature influence is also considered, the accuracy is further improved, meanwhile, the initial measurement value corresponding to the preset reference voltage at the initial moment under the same environment temperature is calculated, whether the voltage measurement module is aged or not is rapidly judged according to the measurement value variation of the initial measurement value and the measurement value at the current moment, and when the aging occurs, the voltage variation of the voltage value corresponding to the target measurement value and the initial voltage value at the initial moment is calculated to represent the aging degree of the voltage measurement module.

With reference to one possible implementation manner of the embodiment of the first aspect, the preset first rule includes a first characteristic equation that characterizes a relationship among the power supply voltage, the measured value, and the temperature of the voltage measurement module at different aging times, and the method further includes: acquiring the environmental temperature at the current moment; correspondingly, obtaining the aging degree of the voltage measurement module based on the measurement value at the current moment and a preset first rule, includes: determining an initial measurement value corresponding to the preset reference voltage at the initial moment under the ambient temperature based on the first characteristic equation; acquiring the measured value variation of the measured value at the current moment and the measured value variation of the initial measured value at the initial moment; the measurement value variation represents the aging degree of the voltage measurement module. In the embodiment of the application, when the initial measurement value corresponding to the preset reference voltage at the initial moment is determined, the temperature influence is also taken into consideration, the aging degree of the voltage measurement module is represented by determining the variation of the measurement value of the current moment and the measurement value of the initial measurement value at the initial moment under the same environmental temperature, and the accuracy of the voltage measurement module is improved.

With reference to a possible implementation manner of the embodiment of the first aspect, if the aging degree of the critical path is represented by a power supply voltage variation corresponding to the target operating frequency of the chip, the preset second rule includes a second characteristic equation that represents a relationship among the power supply voltage, the operating frequency, and the temperature of the critical path at different aging times; the method further comprises the following steps: acquiring the environmental temperature at the current moment; correspondingly, obtaining an aging compensation value corresponding to the aging degree of the critical path based on the aging degree of the critical path and a preset second rule, including: determining a power supply voltage corresponding to a target working frequency at an initial moment under the environment temperature based on the second characteristic equation; and obtaining the power supply voltage corresponding to the target working frequency at the current moment based on the power supply voltage variation and the power supply voltage corresponding to the target working frequency, wherein the power supply voltage corresponding to the target working frequency at the current moment is the aging compensation value. In the embodiment of the application, the aging degree of the critical path can be represented by the power supply voltage variation of the chip, and the influence of the temperature on the aging degree is also taken into consideration when the power supply voltage variation is calculated, so that the calculation accuracy is improved.

With reference to a possible implementation manner of the embodiment of the first aspect, if the aging degree of the critical path is represented by a working frequency variation corresponding to the target power voltage of the chip, the preset second rule includes a second characteristic equation that represents a relationship among the power voltage, the working frequency, and the temperature of the critical path at different aging times; the method further comprises the following steps: acquiring the environmental temperature at the current moment; correspondingly, obtaining an aging compensation value corresponding to the aging degree of the critical path based on the aging degree of the critical path and a preset second rule, including: determining the working frequency corresponding to the target power supply voltage at the initial moment under the environment temperature based on the second characteristic equation; and obtaining the working frequency corresponding to the target power supply voltage at the current moment based on the working frequency variation and the working frequency corresponding to the target power supply voltage, wherein the working frequency corresponding to the target power supply voltage at the current moment is the aging compensation value. In the embodiment of the application, the aging degree of the critical path can be represented according to the working frequency variation of the chip, and when the working frequency variation of the chip is calculated, the influence of the temperature on the aging degree is also taken into consideration, so that the calculation accuracy is improved, and the calculated aging compensation value is more accurate.

With reference to one possible implementation manner of the embodiment of the first aspect, adjusting the power supply voltage or the operating frequency of the chip according to the aging compensation value to perform aging compensation includes: if the aging compensation value corresponding to the aging degree of the critical path is the working frequency corresponding to the target power supply voltage at the current moment, adjusting the working frequency of the chip to be consistent with the working frequency corresponding to the target power supply voltage at the current moment so as to perform aging compensation; and if the aging compensation value corresponding to the aging degree of the critical path is the power supply voltage corresponding to the target working frequency at the current moment, adjusting the power supply voltage of the chip to enable the value of the power supply voltage to be consistent with the power supply voltage corresponding to the target working frequency at the current moment so as to perform aging compensation. In the embodiment of the application, when the aging compensation value corresponding to the aging degree of the critical path is the power supply voltage corresponding to the target working frequency at the current moment, the power supply voltage of the chip can be adjusted to perform aging compensation, and when the aging compensation value corresponding to the aging degree of the critical path is the working frequency corresponding to the target power supply voltage at the current moment, the working frequency of the chip can be adjusted to perform aging compensation, so that the compensation mode is flexible.

With reference to one possible implementation manner of the embodiment of the first aspect, the method further includes: obtaining the measured values of the voltage measuring module under the conditions of different power supply voltages and different temperatures, and fitting to obtain an expression of the relation among the power supply voltages, the measured values and the temperatures at the initial moment; the method comprises the steps of obtaining corresponding measured values of a voltage measuring module after being processed in different aging times under different power supply voltages and different temperature conditions, fitting to obtain expressions of relationships among the power supply voltages, the measured values and the temperatures in the different aging times, and obtaining a first characteristic equation representing the relationships among the power supply voltages, the measured values and the temperatures of the voltage measuring module in the different aging times, wherein the first characteristic equation comprises the expressions representing the relationships among the power supply voltages, the measured values and the temperatures in the initial time and the expressions representing the relationships among the power supply voltages, the measured values and the temperatures in the different aging times. In the embodiment of the application, the corresponding measured values of the voltage measuring module at different moments (non-aging and different aging times), different power supply voltages and different temperatures are measured, and then fitting is performed, so that a first characteristic equation representing the relationship among the power supply voltages, the measured values and the temperatures of the voltage measuring module at different aging times can be obtained, and the aging degree of the voltage measuring module can be determined rapidly according to the equation.

With reference to one possible implementation manner of the embodiment of the first aspect, the method further includes: obtaining frequency values of a critical path module under different power supply voltages and different temperatures, and fitting to obtain an expression of relation among the power supply voltages, the frequency values and the temperatures at an initial moment, wherein the critical path module is a ring oscillator composed of logic gate devices in the critical path; obtaining frequency values of the key path module processed by different aging times under different power supply voltages and different temperature conditions, fitting to obtain expressions of relationships among the power supply voltages, the frequency values and the temperatures under different aging times, and obtaining a second characteristic equation representing the relationships among the power supply voltages, the working frequencies and the temperatures of the key path under different aging times, wherein the second characteristic equation comprises the expressions of the relationships among the power supply voltages, the frequency values and the temperatures at the initial time and the expressions of the relationships among the power supply voltages, the frequency values and the temperatures under different aging times. In the embodiment of the application, the frequency values of the critical path module corresponding to different times (non-aging time and different aging times), different power supply voltages and different temperatures are measured, and then fitting is performed, so that a second characteristic equation representing the relationship among the power supply voltages, the working frequencies and the temperatures of the critical path at different aging times can be obtained, and the aging compensation quantity corresponding to the aging degree of the critical path can be determined quickly according to the equation.

In a second aspect, an embodiment of the present application further provides a device for compensating chip aging, including: the device comprises an acquisition module, an aging detection module and a compensation module; the voltage measurement module is used for measuring the current time corresponding to the preset reference voltage; the aging detection module is used for obtaining the aging degree of the voltage measurement module based on the measurement value at the current moment and a preset first rule, obtaining the aging degree of the critical path based on the aging degree of the voltage measurement module and a preset mapping relation representing the aging correlation of the voltage measurement module and a chip internal critical path, and obtaining an aging compensation value corresponding to the aging degree of the critical path based on the aging degree of the critical path and a preset second rule; and the compensation module is used for adjusting the power supply voltage or the working frequency of the chip according to the aging compensation value so as to perform aging compensation.

In a third aspect, an embodiment of the present application further provides an SOC chip, including: the device comprises a voltage measuring module and a chip aging compensation device; the voltage measurement module is connected with a preset reference voltage and used for measuring a measurement value of the preset reference voltage at the current moment, wherein the measurement of the voltage measurement module is based on a ring oscillator; the chip aging compensation device is connected with the voltage measurement module and used for acquiring the measured value at the current moment, acquiring the aging degree of the voltage measurement module based on the measured value at the current moment and a preset first rule, acquiring an aging compensation value corresponding to the aging degree of the key path based on the aging degree of the voltage measurement module and a preset characterization mapping relation of the voltage measurement module and the aging correlation of the key path in the chip, and adjusting the power supply voltage or the working frequency of the chip according to the aging compensation value to perform aging compensation.

In a fourth aspect, embodiments of the present application further provide an electronic device, where the electronic device includes a body and a chip degradation compensation apparatus as provided in the embodiment of the first aspect and/or in combination with any one of the possible implementations of the embodiment of the first aspect, or an SOC chip as provided in the embodiment of the second aspect.

In a fifth aspect, an embodiment of the present application further provides an electronic device, including: a memory and a processor, the processor coupled to the memory; the memory is used for storing programs; the processor is configured to invoke a program stored in the memory to perform the method according to the first aspect embodiment and/or any possible implementation manner of the first aspect embodiment.

In a sixth aspect, this application further provides a computer-readable storage medium, on which a computer program is stored, where the computer program is executed by a processor to perform the method provided in the foregoing first aspect and/or any possible implementation manner of the first aspect.

Additional features and advantages of the application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the embodiments of the application. The objectives and other advantages of the application may be realized and attained by the structure particularly pointed out in the written description and drawings.

Drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts. The foregoing and other objects, features and advantages of the application will be apparent from the accompanying drawings. Like reference numerals refer to like parts throughout the drawings. The drawings are not intended to be to scale as practical, emphasis instead being placed upon illustrating the subject matter of the present application.

Fig. 1 shows a schematic flowchart of a chip aging compensation method provided by an embodiment of the present application.

Fig. 2 is a schematic diagram illustrating a principle of calculating a mapping relationship characterizing an aging dependency of a voltage measurement module and a chip internal critical path according to an embodiment of the present application.

Fig. 3 is a schematic flowchart illustrating a further chip aging compensation method according to an embodiment of the present application.

Fig. 4 shows a block diagram of a chip aging compensation module provided in an embodiment of the present application.

Fig. 5 shows a schematic structural diagram of an electronic device provided in an embodiment of the present application.

Detailed Description

The technical solutions in the embodiments of the present application will be described below with reference to the drawings in the embodiments of the present application.

It should be noted that: like reference numbers and letters identify similar items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Meanwhile, relational terms such as "first," "second," and the like may be used solely in the description herein to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

Further, the term "and/or" in the present application is only one kind of association relationship describing the associated object, and means that three kinds of relationships may exist, for example, a and/or B may mean: a exists alone, A and B exist simultaneously, and B exists alone.

In view of the defects of the current chip aging compensation scheme, the embodiment of the application provides a chip aging compensation method, and in order to improve the aging to the performance deterioration of a chip and ensure the optimal energy efficiency ratio, the scheme capable of carrying out aging detection measurement at any time according to needs and compensating the power supply voltage or the working frequency of the chip is provided, so that the power supply voltage of the chip is adjusted along with the aging condition, and the extra margin does not need to be added to the power supply voltage of the chip in the initial stage in order to avoid downtime caused by aging.

For ease of understanding, the chip aging compensation method provided in the embodiments of the present application is described below with reference to fig. 1.

S1: and measuring the measured value of the preset reference voltage at the current moment by using the voltage measuring module.

When the aging measurement condition is satisfied, the voltage measurement module is used for measuring the voltage of a preset reference voltage (which may be the chip power supply voltage or other external power supply voltage and is a known value), and obtaining the measurement value (represented by Count) at the current moment. Wherein, the voltage measurement module is based on the voltage measurement module of ring oscillator. The ring oscillator is formed by connecting the output ends and the input ends of a plurality of logic gate circuits end to end, and aging exists along with the increase of working time.

The aging measurement condition may be the power-on time of the chip, or aging detection may be performed at regular time, or aging degree detection may be performed when the aging measurement condition is satisfied when the system is idle or any detection is required, and flexible configuration may be performed as required.

S2: and obtaining the aging degree of the voltage measuring module based on the measured value at the current moment and a preset first rule.

After the measured value at the current moment is obtained, the aging degree of the voltage measuring module can be obtained based on the measured value at the current moment and a preset first rule. The aging degree of the voltage measurement module can be represented by a difference value, a proportion, an error percentage and the like, and the aging degree can be represented by selecting the mode according to needs.

The voltage measurement module has different measurement values when measuring the same power supply voltage during non-aging and aging, so that the aging degree of the voltage measurement module can be represented by the variation of the measurement values corresponding to the same power supply voltage. Similarly, the voltage measurement modules have different power voltages corresponding to the same measurement value when the voltage measurement modules are not aged or aged, so that the aging degree of the voltage measurement modules can be represented by using the variation of the power voltages corresponding to the same measurement value.

In the first embodiment, if the aging degree of the voltage measurement module is represented by the variation (as an absolute value) of the power supply voltage corresponding to the specified target measurement value, the preset first rule may include a first characteristic equation representing the relationship between the measurement value and the power supply voltage of the voltage measurement module at different aging times. Alternatively, the first characteristic equation may be:

Voltage_T0＝func(Count)，

Voltage_T1＝func(Count)，

……

voltage _ Tn ═ func (count). Wherein, Count is a measured value, T0 is an initial time, the Voltage measurement module is not aged at this time, T1 to Tn are different aging times of the Voltage measurement module, Voltage _ T0 is a power supply Voltage at the time of T0, that is, the initial time (not aged), Voltage _ T1 is a power supply Voltage at the time of T1, and so on, and Voltage _ Tn is a power supply Voltage at the time of Tn.

At this time, the implementation process of S2 may be: whether the voltage measurement module is aged or not is judged based on the measurement value at the current moment, when the voltage measurement module is determined to be aged, a voltage value corresponding to a specified target measurement value (which can be specified or set as required) is obtained based on a first characteristic equation, and a voltage variation of the voltage value corresponding to the specified target measurement value and an initial voltage value corresponding to the specified target measurement value at the initial moment is obtained, wherein the voltage variation represents the aging degree of the voltage measurement module. Since the voltage measurement module is not aged at time T0, if the measurement value at the current time is not equal to the initial measurement value at time T0 or differs by more than a preset threshold, it is indicative that the voltage measurement module is aged. Then, the voltage value corresponding to the specified target measurement value can be obtained based on the first characteristic equation, and the voltage variation of the voltage value corresponding to the specified target measurement value and the initial voltage value at the initial time can be obtained to characterize the aging degree of the voltage measurement module.

When the Voltage value corresponding to the specified target measurement value is obtained based on the first characteristic equation, the preset reference Voltage may be respectively substituted into the expressions of the first characteristic equations Voltage _ T1 to Voltage _ Tn to calculate corresponding measurement values, then the equation with the smallest difference degree is respectively selected to calculate the Voltage value corresponding to the specified target measurement value compared with the measurement value at the current time, and the Voltage value corresponding to the specified target measurement value is calculated by using the expression of Voltage _ T2 assuming that the measurement value calculated by using Voltage _ T2 has the smallest difference degree compared with the measurement value at the current time.

Of course, the Count and the Voltage in the expression of the first characteristic equation may be reversed, and in this case, the first characteristic equation may be:

Count_T0＝func(Voltage)，

Count_T1＝func(Voltage)，

……

count _ Tn ═ func (voltage). Wherein, Count is a measured value, T0 is an initial time, the voltage measurement module is not aged at this time, T1-Tn are different aging times of the voltage measurement module, Count _ T0 is a measured value at a time T0, that is, the initial time (non-aged), Count _ T1 is a measured value at a time T1, and so on, Count _ Tn is a measured value at a time Tn.

At this time, when obtaining the voltage value corresponding to the specified target measurement value based on the first characteristic equation, the principle is similar to the above, and it is also necessary to substitute the preset reference voltage into the expressions of the first characteristic equations Count _ T1 to Count _ Tn, respectively, to obtain the corresponding measurement values by calculation, and then select the equation with the minimum difference degree to calculate the voltage value corresponding to the specified target measurement value, respectively, compared with the measurement value at the current time.

In this embodiment, the chip aging compensation method further includes obtaining the first characteristic equation representing the relationship between the measured value of the voltage measurement module and the power supply voltage at different aging times. The process of obtaining the first characteristic equation representing the relationship between the measured value of the voltage measurement module and the power supply voltage at different aging times may be: obtaining the measured values of the Voltage measurement module (at time T0) under different power voltages, and fitting to obtain an expression of the relationship between the power voltages and the measured values at the initial time, that is, the above-mentioned Voltage _ T0 ═ func (Count) or Count _ T0 ═ func (Voltage); the method comprises the steps of obtaining measured values of a Voltage measuring module processed by different aging times (T1-Tn) under different power supply voltages, and fitting to obtain expressions of relationships between the power supply voltages and the measured values under different aging times, namely, Voltage _ T1 ═ func (Count) -Voltage _ Tn ═ func (Count), or Count _ T1 ═ func (Count) -Count _ Tn ═ func (Count), so as to obtain a first characteristic equation representing relationships between the measured values of the Voltage measuring module and the power supply voltages under different aging times.

The fitting method may be linear interpolation fitting, or curve fitting, such as polynomial fitting, exponential fitting, etc., and the specific principles of these fitting methods are well known to those skilled in the art and will not be described here.

In the second embodiment, if the aging degree of the voltage measurement module is represented by a variation of a measurement value corresponding to a specified power voltage (e.g., a preset reference voltage), the preset first rule may include the measurement value corresponding to the preset reference voltage at the initial time. At this time, the implementation process of S2 may be: the measured value variation of the measured value corresponding to the preset reference voltage at the current moment and the measured value variation of the initial measured value corresponding to the preset reference voltage at the moment T0 (initial moment) are obtained. Because the voltage measuring module is not aged at the time of T0, if the measured value at the current time is equal to the initial measured value at the time of T0, the characterization voltage measuring module is not aged, and if the measured value at the current time is not equal to the initial measured value at the time of T0, the characterization voltage measuring module is aged, and the variation of the measured values between the measured value at the current time and the initial measured value at the time of T0 is the aging degree of the voltage measuring module.

In addition, if the aging degree of the voltage measurement module is represented by a variation of a measurement value corresponding to a specified power voltage (e.g., a preset reference voltage), the preset first rule may also include the first characteristic equation, and in this case, the implementation process of S2 may be: based on an expression of Voltage _ T0 ═ func (Count) or Count _ T0 ═ func (Voltage) at the time T0, the preset reference Voltage is substituted into the expression to obtain a measurement value at the initial time, and then the measurement value corresponding to the preset reference Voltage at the current time and the measurement value variation of the initial measurement value at the time T0 are obtained.

In addition, considering that the environmental temperature also has a certain influence on the aging of the chip, the environmental temperature can be also taken into account when calculating the aging degree of the critical path. In a third embodiment, the preset first rule includes a first characteristic equation representing a relationship among the power supply voltage, the measured value and the temperature of the voltage measurement module at different aging times. Alternatively, the first characteristic equation may be:

Voltage_T0＝func(Count，Temp)，

Voltage_T1＝func(Count，Temp)，

……

voltage _ Tn ═ func (Count, Temp), where Temp is the temperature.

At this time, the chip aging compensation method further includes: and acquiring the ambient temperature at the current moment. The temperature sensor may be used to obtain the ambient temperature of the environment in which the chip is located or the junction temperature inside the chip.

If the aging degree of the voltage measurement module is characterized by the variation of the power supply voltage corresponding to the specified target measurement value, the implementation process of S2 may be: determining an initial measurement value corresponding to a preset reference voltage (known value) at an initial moment under the same environmental temperature based on a first characteristic equation; acquiring the measured value corresponding to the preset reference voltage at the current moment and the measured value variable quantity of the initial measured value at the initial moment; if the variation of the measured value exceeds a preset threshold value, acquiring a voltage value corresponding to a specified target measured value under the environment temperature based on a first characteristic equation, and acquiring a voltage variation of the voltage value corresponding to the specified target measured value and an initial voltage value corresponding to the specified target measured value at an initial moment, wherein the voltage variation represents the aging degree of the voltage measurement module. The method includes the steps of substituting the environmental temperature at the current moment and a preset reference Voltage into a Voltage _ T0 ═ func (Count, Temp) expression to obtain a measured value at an initial moment, comparing the measured value at the current moment with the measured value at the initial moment, and if the difference between the measured value at the current moment and the measured value at the initial moment exceeds a preset threshold, obtaining a Voltage value corresponding to a specified target measured value at the same environmental temperature based on a first characteristic equation, obtaining a Voltage variation of the Voltage value corresponding to the specified target measured value and the initial Voltage value at the initial moment, wherein the Voltage variation represents the aging degree of a Voltage measurement module.

The process of obtaining the Voltage value corresponding to the specified target measurement value at the same ambient temperature based on the first characteristic equation is similar to the process of obtaining the Voltage value corresponding to the specified target measurement value based on the first characteristic equation, except that the ambient temperature at the current time is mostly considered, the preset reference Voltage and the ambient temperature at the current time are respectively substituted into the expressions of the first characteristic equations Voltage _ T1-Voltage _ Tn to calculate the corresponding measurement value, then the equation with the smallest difference degree is selected to calculate the Voltage value corresponding to the specified target measurement value compared with the measurement value at the current time, and the Voltage value corresponding to the specified target measurement value is calculated by using the expression of Voltage _ T2 assuming that the difference degree between the measurement value calculated by using Voltage _ T2 and the measurement value at the current time is the smallest.

Count_T0＝func(Voltage，Temp)，

Count_T1＝func(Voltage，Temp)，

……

Count_Tn＝func(Voltage，Temp)。

if the aging degree of the voltage measurement module is represented by a variation of a measurement value corresponding to a specified power voltage (e.g., a preset reference voltage), the implementation process of S2 may be: based on the first characteristic equation, determining an initial measurement value corresponding to a preset reference voltage (known value) at an initial moment under the same environmental temperature, and acquiring a measurement value variation between the measurement value corresponding to the preset reference voltage at the current moment and the initial measurement value at the initial moment. Because the voltage measurement module is not aged at the time of T0, if the measurement value at the current time under the same environmental temperature is equal to the initial measurement value at the time of T0, the characterization voltage measurement module is not aged, if the measurement value at the current time under the same environmental temperature is not equal to the initial measurement value at the time of T0, the characterization voltage measurement module is aged, and the variation of the measurement value between the measurement value at the current time under the same environmental temperature and the initial measurement value at the time of T0 is the aging degree of the voltage measurement module.

Under the condition of considering the ambient temperature, the chip aging compensation method further comprises the following steps: obtaining a first characteristic equation representing the relationship among the power supply voltage, the measured value and the temperature of the voltage measurement module at different aging times, wherein the process of obtaining the first characteristic equation representing the relationship among the power supply voltage, the measured value and the temperature of the voltage measurement module at different aging times may be: obtaining measured values of the Voltage measurement module (at time T0) under different power supply voltages and different temperature conditions, and fitting the measured values to obtain an expression of a relationship among the power supply voltages, the measured values and the temperature at an initial time, that is, the Voltage _ T0 ═ func (Count, Temp) or Count _ T0 ═ func (Voltage, Temp); the method comprises the steps of obtaining corresponding measured values of Voltage measurement modules processed by different aging times (T1-Tn) under different power supply voltages and different temperature conditions, and fitting to obtain expressions of relationships among the power supply voltages, the measured values and the temperatures under the different aging times, namely, the Voltage _ T1-Count (Count, Temp) -Voltage _ Tn-Count (Count, Temp), or the Count _ T1-Count (Voltage, Temp) -Count _ Tn-Count (Voltage, Temp), so as to obtain a first characteristic equation representing relationships among the power supply voltages, the measured values and the temperatures of the Voltage measurement modules under the different aging times.

The fitting mode may be linear interpolation fitting, or curve fitting, such as polynomial fitting, exponential fitting, etc.

S3: and obtaining the aging degree of the critical path based on the aging degree of the voltage measurement module and a preset mapping relation representing the aging correlation of the voltage measurement module and the critical path in the chip.

After the aging degree of the voltage measurement module is obtained, the aging degree of the critical path corresponding to the aging degree of the voltage measurement module can be obtained by combining a preset mapping relation representing the aging correlation between the voltage measurement module and the critical path inside the chip.

Based on the above, the aging degree of the voltage measurement module may be represented by a measurement value variation corresponding to the specified power supply voltage, or may be represented by a voltage variation corresponding to the target measurement value. The aging degree of the critical path can be represented by the power supply voltage variation of the chip under the target frequency condition, and also can be represented by the working frequency variation of the chip under the target power supply voltage condition. The mapping relationship may be a mapping relationship between the voltage variation or the measured value variation and a power supply voltage variation or an operating frequency variation of the chip.

Due to the aging of the critical path, the operating frequency of the chip under the same power supply voltage condition is reduced, and the required power supply voltage under the same target frequency condition is increased. Therefore, the aging degree of the critical path can be represented based on the power supply voltage variation corresponding to the target frequency or the operating frequency variation corresponding to the target power supply voltage before and after aging.

In the present application, the power supply voltage variation, the measured value variation, the voltage variation, and the operating frequency variation are all expressed as positive values by absolute values.

It should be noted that there may be one or more critical paths inside the chip, and if there are multiple critical paths, there are multiple corresponding aging correlation mappings, and when determining the aging degree of the critical path, it is necessary to calculate the corresponding aging degree for each critical path by combining the mapping of the critical path.

S4: and obtaining an aging compensation value corresponding to the aging degree of the critical path based on the aging degree of the critical path and a preset second rule.

After the aging degree of the critical path is obtained, an aging compensation value corresponding to the aging degree of the critical path can be obtained by combining the preset second rule. Wherein, the aging degree of the critical path has correlation with the aging compensation value. For example, if the aging degree of the critical path is represented by the power supply voltage variation corresponding to the target frequency of the chip, the aging compensation value is the power supply voltage corresponding to the target frequency at the current moment, and the larger the aging degree is, the larger the corresponding aging compensation value is; if the aging degree of the critical path is represented by the working frequency variation corresponding to the target power supply voltage of the chip, the aging compensation value is the working frequency corresponding to the target power supply voltage of the chip at the current moment, and the larger the aging degree is, the smaller the corresponding aging compensation value is.

If the aging degree of the critical path is represented by the variation of the operating frequency corresponding to the target power voltage of the chip, in an embodiment, without considering the influence of the temperature on the aging of the critical path, the implementation process of S4 may be: and obtaining the working frequency corresponding to the target power supply voltage at the current moment based on the working frequency variation and the working frequency corresponding to the target power supply voltage at the initial moment, namely the working frequency corresponding to the target power supply voltage at the current moment is the initial working frequency-working frequency variation. At this time, the preset second rule may include an initial operating frequency at an initial time.

In addition, in the case of not considering the influence of temperature on the aging of the critical path, the preset second rule may further include a second characteristic equation that characterizes a relationship between a power supply voltage (expressed by Vdd) and an operating frequency (expressed by Freq) of the critical path at different aging times, and optionally, the second characteristic equation may be:

Vdd_T0＝func(Freq)，

Vdd_T1＝func(Freq)，

……

vdd _ Tn ═ func (freq), where T0 is the initial time, the critical path is not aged, T1 to Tn are the different aging times of the critical path, Vdd _ T0 is the power supply voltage at the time T0, that is, the initial time (not aged), Vdd _ T1 is the power supply voltage at the time T1, and so on, Vdd _ Tn is the power supply voltage at the time Tn.

Of course, Vdd and Freq in the above expression of the second characteristic equation may be reversed, and in this case, the second characteristic equation may be:

Freq_T0＝func(Vdd)，

Freq_T1＝func(Vdd)，

……

Freq_Tn＝func(Vdd)。

at this time, the implementation process of S4 may be: the chip target power supply voltage at the time T0 is substituted into Vdd _ T0 ═ func (Freq) or Freq _ T0 ═ func (Vdd), the chip operating frequency at the time T0 is obtained, and the operating frequency corresponding to the target power supply voltage at the current time is obtained based on the operating frequency variation corresponding to the target power supply voltage and the initial operating frequency at the initial time.

If the aging degree of the critical path is represented by a power supply voltage variation corresponding to a target operating frequency of the chip, in an embodiment, without considering the influence of temperature on the aging of the critical path, the implementation process of S4 may be: and obtaining the power supply voltage corresponding to the target operating frequency at the current moment based on the power supply voltage variation corresponding to the target operating frequency and the power supply voltage at the initial moment, namely obtaining the power supply voltage corresponding to the target operating frequency at the current moment as the power supply voltage at the initial moment plus the power supply voltage variation. At this time, the preset second rule may include a chip power supply voltage corresponding to the target operating frequency at the initial time.

In addition, the preset second rule may further include a second characteristic equation characterizing a relationship between a power supply voltage (represented by Vdd) and an operating frequency (represented by Freq) of the critical path at different aging times. At this time, the implementation process of S4 may be: the target chip operating frequency at the time T0 is substituted into Vdd _ T0 ═ func (Freq) or Freq _ T0 ═ func (Vdd) to obtain the power supply voltage at the time T0, and the power supply voltage corresponding to the target operating frequency at the current time is obtained based on the power supply voltage variation amount corresponding to the target operating frequency and the power supply voltage at the initial time.

In this embodiment, the method for compensating for chip aging further includes obtaining a second characteristic equation representing a relationship between a supply voltage and an operating frequency of the critical path at different aging times, where the process of obtaining the second characteristic equation representing the relationship between the supply voltage and the operating frequency of the critical path at different aging times may be: obtaining frequency values of the critical path module at T0 under different power voltages, and fitting to obtain an expression of a relationship between the power voltage and the frequency value at the initial time, that is, obtaining Vdd _ T0 ═ func (Freq) or Freq _ T0 ═ func (Vdd). Obtaining frequency values of the critical path module processed by different aging times (T1-Tn) under different power supply voltages and different temperatures, and fitting to obtain expressions of relationships between the power supply voltages and the frequency values under different aging times, that is, obtaining Vdd _ T1 ═ func (Freq) -Vdd _ Tn ═ func (Freq) or Freq _ T1 ═ func (Vdd) -Freq _ Tn ═ func (Vdd), thereby obtaining a second characteristic equation representing relationships between the power supply voltages and the operating frequencies of the critical path under different aging times.

It should be noted that, in order to test the aging degree of the critical path, a ring oscillator composed of logic gate devices in the critical path of the chip may be used. The critical path module is a ring oscillator composed of logic gate devices in the critical path of the chip, and has the same logic devices and the same connection mode as those of the critical path part. The critical path is simulated through the critical path module, the characteristics of the critical path in the core circuit are reflected by monitoring the working characteristics of the critical path module, and under the set working condition (such as voltage, temperature and the like), the output frequency of the ring oscillator (the critical path module) is measured to represent and measure the delay characteristics of the critical path and the highest working frequency which can be reached by the chip under the working condition.

Because there may be a plurality of critical paths of the chip, there may also be a plurality of corresponding critical path modules, and one critical path corresponds to one critical path module. During testing, the ring oscillator formed by logic gate devices in all critical paths in the chip is tested, and accordingly, the second characteristic equation can be multiple. And finally, obtaining the corresponding relation between the working frequency corresponding to the chip and the power supply voltage, and setting the corresponding working voltage according to the target working frequency or the target power supply voltage during application.

In addition, considering that the environmental temperature also has a certain influence on the aging of the chip, the environmental temperature can be taken into account when calculating the aging degree of the critical path. In yet another embodiment, the preset second rule includes a second characteristic equation characterizing the relationship between the supply voltage (represented by Vdd), the operating frequency (represented by Freq), and the temperature (represented by Temp) of the critical path at different aging times. Alternatively, the second characteristic equation may be:

Vdd_T0＝func(Freq，Temp)，

Vdd_T1＝func(Freq，Temp)，

……

VddTn ═ func (Freq, Temp), where Temp is the temperature.

Similarly, Freq and Vdd in the second characteristic equation can be reversed, and the second characteristic equation is:

Freq_T0＝func(Vdd，Temp)，

Freq_T1＝func(Vdd，Temp)，

……

Freq_Tn＝func(Vdd，Temp)。

in this embodiment, the chip aging compensation method further includes obtaining an ambient temperature at the current time.

If the aging degree of the critical path is represented by the power voltage variation corresponding to the target operating frequency of the chip, the implementation process of S4 may be: and determining a power supply voltage corresponding to the target working frequency at the initial moment (such as the chip working frequency at the initial moment) at the ambient temperature based on the second characteristic equation, and obtaining the power supply voltage corresponding to the target working frequency at the current moment based on the power supply voltage variation corresponding to the target working frequency and the power supply voltage at the initial moment, wherein the power supply voltage corresponding to the target working frequency at the current moment is the aging compensation value. That is, the target operating frequency is substituted into Vdd _ T0 or Freq _ T0 to func (Vdd, Temp) to obtain the power supply voltage at the initial time, and the power supply voltage corresponding to the target operating frequency at the current time is obtained based on the power supply voltage variation amount corresponding to the target operating frequency. And the power supply voltage corresponding to the target working frequency at the current moment is equal to the power supply voltage + the power supply voltage variation at the initial moment.

If the aging degree of the critical path is represented by the variation of the operating frequency corresponding to the target power voltage of the chip, the implementation process of S4 may be: and determining the working frequency corresponding to the target power supply voltage at the initial moment under the environment temperature based on a second characteristic equation, and obtaining the working frequency corresponding to the target power supply voltage at the current moment based on the working frequency variation corresponding to the target power supply voltage and the working frequency of the power supply voltage at the initial moment, wherein the working frequency at the current moment is the aging compensation value. That is, the target power supply voltage at the initial time is substituted into Vdd _ T0 ═ func (Freq, Temp) or Freq _ T0 ═ func (Vdd, Temp) to obtain the operating frequency at the initial time, and the operating frequency corresponding to the target power supply voltage at the current time is obtained based on the amount of change in the operating frequency corresponding to the target power supply voltage. And the working frequency corresponding to the target power supply voltage at the current moment is the working frequency-working frequency variable quantity at the initial moment.

Under the condition of considering the ambient temperature, the chip aging compensation method further comprises the following steps: obtaining a second characteristic equation representing the relationship among the power supply voltage, the operating frequency and the temperature of the critical path at different aging times, wherein the process of obtaining the second characteristic equation representing the relationship among the power supply voltage, the operating frequency and the temperature of the critical path at different aging times may be: obtaining frequency values of the critical path module under different power supply voltages and different temperatures, and fitting to obtain an expression of a relationship among the power supply voltages, the frequency values and the temperatures at the initial time, that is, obtaining Vdd _ T0 ═ func (Freq, Temp) or Freq _ T0 ═ func (Vdd, Temp). Obtaining frequency values of the key path module processed by different aging times under different power supply voltages and different temperature conditions, and fitting to obtain expressions of relationships among the power supply voltages, the frequency values and the temperatures under different aging times, that is, obtaining Vdd _ T1-Vdd _ Tn-func (Freq, Temp) or Vdd _ T1-func (Vdd, Temp) -Vdd _ Tn-func (Vdd, Temp), thereby obtaining a second characteristic equation representing relationships among the power supply voltages, the operating frequencies and the temperatures of the key path under different aging times.

The fitting method may be linear interpolation fitting, or curve fitting, such as polynomial fitting, exponential fitting, and the specific principles of these fitting methods are well known to those skilled in the art and will not be described here.

The mapping relationship characterizing the aging dependency of the voltage measurement module and the chip internal critical path may be obtained based on the first characteristic equation and the second characteristic equation, and in order to better understand the mapping relationship characterizing the aging dependency of the voltage measurement module and the chip internal critical path, the following description is made in conjunction with the first characteristic equation and the second characteristic equation, and a schematic diagram thereof may be shown in fig. 2.

In the case of considering the ambient temperature, the first characteristic equation is assumed to be:

Voltage_T0＝func(Count，Temp)，

Voltage_T1＝func(Count，Temp)，

……

Voltage_Tn＝func(Count，Temp)。

the second characteristic equation may be:

Vdd_T0＝func(Freq，Temp)，

Vdd_T1＝func(Freq，Temp)，

……

Vdd_Tn＝func(Freq，Temp)。

after obtaining the first characteristic equation, at this time, according to the application requirement, the Target measurement value Count _ Target of the voltage measurement module is set, and the Voltage change amount Voltage _ variation (T1, T1 … … Tn | | T0) corresponding to the different aging times (T1-Tn) of the Voltage measurement module relative to the target measurement value at the time T0, that is, the Voltage change amount of the power supply Voltage corresponding to the target measurement value at the time T1 and the target measurement value at the time T0, the Voltage change amount of the power supply Voltage corresponding to the target measurement value at the time T2 and the target measurement value at the time T0, the Voltage change amount of the power supply Voltage corresponding to the target measurement value at the time T3 and the power supply Voltage corresponding to the target measurement value at the time T0, and so on until the Voltage change amount of the power supply Voltage corresponding to the target measurement value at the time Tn and the target measurement value at the time T0 are estimated.

After obtaining the second characteristic equation, at this time, according to application requirements, a Target frequency value (Freq _ Target) of the critical path module is set, power voltage variation Vdd _ variation (T1, T1 … … Tn | | T0) corresponding to Target frequency values at T0 for different aging times (T1-Tn) of the critical path module is estimated, that is, power voltage variation of the power voltage corresponding to the Target frequency value at T1 and the power voltage corresponding to the Target frequency value at T0 is estimated, power voltage variation of the power voltage corresponding to the Target frequency value at T2 and the power voltage corresponding to the Target frequency value at T0 are estimated, power voltage variation of the power voltage corresponding to the Target frequency value at T3 and the power voltage variation of the power voltage corresponding to the Target frequency value at T0 are estimated, and so on until the power voltage variation of the power voltage corresponding to the Target frequency value at Tn and the power voltage corresponding to the Target frequency value at T0 are estimated.

After Voltage change quantity Voltage _ variation (T1, T1 … … Tn | | T0) corresponding to different aging times (T1-Tn) of the Voltage measurement module relative to a target measurement value at the time of T0 and power supply Voltage change quantity Vdd _ variation (T1, T1 … … Tn | | T0) corresponding to different aging times (T1-Tn) of the critical path module relative to a target frequency value at the time of T0 are calculated, the obtained Voltage change quantity and the obtained power supply Voltage change quantity are in one-to-one correspondence according to the same aging time, and then proper models (such as a first-order polynomial, a multiple-order polynomial, an exponential model, a power exponent exponential model, a multiple-order model and the like) are adopted for fitting representation, so that a mapping relation representing the aging correlation of the Voltage measurement module and a chip internal critical path is obtained.

The mapping relationship is a mapping relationship between a voltage variation of the voltage measurement module and a power supply voltage variation of the chip, and the mapping relationship may also be a mapping relationship between a measured value variation and a power supply voltage variation of the chip, a mapping relationship between a voltage variation of the voltage measurement module and an operating frequency variation, and a mapping relationship between a measured value variation and an operating frequency variation.

Specifically, in one embodiment, when the first characteristic equation is:

Count_T0＝func(Voltage，Temp)，

Count_T1＝func(Voltage，Temp)，

……

Count_Tn＝func(Voltage，Temp)。

the second characteristic equation may be:

Vdd_T0＝func(Freq，Temp)，

Vdd_T1＝func(Freq，Temp)，

……

vdd _ Tn is func (Freq, Temp). At this time, the mapping relationship is a mapping relationship between the variation of the measured value and the variation of the power voltage of the chip.

In another embodiment, when the first characteristic equation is:

Count_T0＝func(Voltage，Temp)，

Count_T1＝func(Voltage，Temp)，

……

Count_Tn＝func(Voltage，Temp)。

the second characteristic equation may be:

Freq_T0＝func(Vdd，Temp)，

Freq_T1＝func(Vdd，Temp)，

……

freq _ Tn is func (Vdd, Temp). At this time, the mapping relationship is a mapping relationship between the measured value variation and the operating frequency variation.

In another embodiment, when the first characteristic equation is:

Voltage_T0＝func(Count，Temp)，

Voltage_T1＝func(Count，Temp)，

……

Voltage_Tn＝func(Count，Temp)。

the second characteristic equation may be:

Freq_T0＝func(Vdd，Temp)，

Freq_T1＝func(Vdd，Temp)，

……

freq _ Tn is func (Vdd, Temp). At this time, the mapping relationship is a mapping relationship between the voltage variation and the operating frequency variation.

The principle of obtaining the mapping relationship representing the aging dependency of the voltage measurement module and the chip internal critical path based on the first characteristic equation and the second characteristic equation is similar to the principle of obtaining the mapping relationship representing the aging dependency of the voltage measurement module and the chip internal critical path based on the first characteristic equation and the second characteristic equation, without considering the ambient temperature, and will not be described here.

S5: and adjusting the power supply voltage or the working frequency of the chip according to the aging compensation value to perform aging compensation.

And after the aging compensation value is obtained through calculation, adjusting the power supply voltage or the working frequency of the chip according to the aging compensation value to perform aging compensation.

In one embodiment, if the aging compensation value corresponding to the aging degree of the critical path is the operating frequency of the current time, the operating frequency of the chip may be adjusted to be consistent with the operating frequency of the current time to perform aging compensation. In this embodiment, the aging compensation is performed by adjusting the operating frequency of the chip.

In one embodiment, if the aging compensation value corresponding to the aging degree of the critical path is the power supply voltage corresponding to the target operating frequency at the current time, the aging compensation may be performed by adjusting the output voltage of a power supply-related module (e.g., an external power supply module of a chip or a low dropout regulator (LDO) inside the chip) so that the output value of the output voltage is consistent with the power supply voltage at the current time. In this embodiment, the aging compensation is performed by adjusting the operating voltage of the chip.

For a better understanding of the above-described chip aging compensation method, a description will be given below with reference to a specific embodiment shown in fig. 3. It should be noted that the embodiment shown in fig. 3 is only one of many embodiments of the present application, and thus, it should not be construed as limiting the present application.

When the aging measurement condition is met, the voltage measurement module is connected with a preset reference voltage (which can be the power supply voltage of the chip or other external power supply voltage and is a known value) to obtain a measurement value at the current moment. And then calculating an initial measured value corresponding to a preset reference voltage at an initial moment under the same environmental temperature based on the first characteristic equation, calculating the variation of the measured value between the measured value at the current moment and the initial measured value at the initial moment, and if the variation of the measured value is greater than a preset threshold, acquiring a voltage value corresponding to a specified target measured value under the same environmental temperature by combining the first characteristic equation, and acquiring the voltage variation of the voltage value at the current moment corresponding to the specified target measured value and the initial voltage value at the initial moment, thereby acquiring the aging degree of the voltage measurement module. And then, combining the voltage measurement module with the mapping relation of the aging correlation of the critical path in the chip to obtain the aging degree of the critical path, such as the power supply voltage variation. And then, determining the power supply voltage corresponding to the target frequency at the initial moment under the same environmental temperature based on the second characteristic equation, obtaining the power supply voltage at the current moment based on the power supply voltage variation and the power supply voltage corresponding to the target frequency, and then controlling the power supply related module to adjust the output voltage of the power supply related module to enable the output voltage to be consistent with the power supply voltage at the current moment.

Based on the same inventive concept, the embodiment of the present application further provides a chip aging compensation apparatus, which is configured to: the method comprises the steps of obtaining a measured value at the current moment corresponding to a preset reference voltage measured by a voltage measuring module, obtaining the aging degree of the voltage measuring module based on the measured value at the current moment and a preset first rule, obtaining the aging degree of a key path based on the aging degree of the voltage measuring module and a preset characteristic mapping relation of the voltage measuring module and the aging correlation of the key path in a chip, obtaining an aging compensation value corresponding to the aging degree of the key path based on the aging degree of the key path and a preset second rule, and adjusting the power supply voltage or the working frequency of the chip according to the aging compensation value to perform aging compensation.

The chip aging compensation device may be a physical device or a virtual device (software function module). In one embodiment, a schematic structural diagram of the chip degradation compensation apparatus can be shown in fig. 4. The device comprises an acquisition module, an aging detection module and a compensation module.

The acquisition module is used for acquiring a measured value of a preset reference voltage measured by the voltage measurement module at the current moment, wherein the voltage measurement module is based on a ring oscillator.

And the aging detection module is used for obtaining the aging degree of the voltage measurement module based on the measurement value at the current moment and a preset first rule, obtaining the aging degree of the key path based on the aging degree of the voltage measurement module and a preset characteristic mapping relation of the aging correlation of the voltage measurement module and the key path in the chip, and obtaining an aging compensation value corresponding to the aging degree of the key path based on the aging degree of the key path and a preset second rule.

And the compensation module is used for adjusting the power supply voltage or the working frequency of the chip according to the aging compensation value so as to perform aging compensation.

Optionally, the preset first rule includes a first characteristic equation representing a relationship among the power supply voltage, the measured value, and the temperature of the voltage measurement module at different aging times, and the obtaining module is further configured to obtain the ambient temperature at the current time. Accordingly, an aging detection module to: determining an initial measurement value corresponding to a preset reference voltage at an initial moment under the ambient temperature based on the first characteristic equation; acquiring the measured value variation of the measured value at the current moment and the measured value variation of the initial measured value at the initial moment; if the measured value variation exceeds a preset threshold value, acquiring a voltage value corresponding to a specified target measured value under the ambient temperature based on the first characteristic equation, and acquiring a voltage variation of the voltage value corresponding to the specified target measured value and an initial voltage value at an initial moment, wherein the voltage variation represents the aging degree of the voltage measurement module. Or, an aging detection module to: determining an initial measurement value corresponding to a preset reference voltage at an initial moment under the ambient temperature based on the first characteristic equation; and acquiring the measured value variation of the measured value at the current moment and the measured value variation of the initial measured value at the initial moment, wherein the measured value variation represents the aging degree of the voltage measuring module.

Optionally, the preset second rule includes a second characteristic equation that represents a relationship among a power supply voltage, an operating frequency, and a temperature of the critical path at different aging times, and if the aging degree of the critical path is represented by a power supply voltage variation corresponding to the target operating frequency of the chip, the aging detection module is configured to: determining a power supply voltage corresponding to a target working frequency at an initial moment under the environment temperature based on the second characteristic equation; and obtaining the power supply voltage corresponding to the target working frequency at the current moment based on the power supply voltage variation and the power supply voltage corresponding to the target working frequency, wherein the power supply voltage corresponding to the target working frequency at the current moment is the aging compensation value.

If the aging degree of the critical path is represented by the working frequency variation corresponding to the target power supply voltage of the chip, the aging detection module is used for: determining the working frequency corresponding to the target power supply voltage at the initial moment under the environment temperature based on the second characteristic equation; and obtaining the working frequency corresponding to the target power supply voltage at the current moment based on the working frequency variation and the working frequency corresponding to the target power supply voltage, wherein the working frequency corresponding to the target power supply voltage at the current moment is the aging compensation value.

The chip aging compensation device provided by the embodiment of the present application has the same implementation principle and technical effect as the foregoing method embodiments, and for the sake of brief description, no mention is made in the device embodiment, and reference may be made to the corresponding contents in the foregoing method embodiments.

It should be noted that, if the chip aging compensation apparatus is an entity device, the obtaining module may be a transceiver including a port, the aging detecting module may be a processor, a controller or a hardware module with similar functions, and the compensating module may be a regulator or a hardware module with similar functions, where the regulator may also be a processor, a controller or the like.

Based on the same inventive concept, the embodiment of the present application further provides an SOC chip, which includes a voltage measurement module and the chip aging compensation device (in this case, hardware). The voltage measurement module is connected with a preset reference power supply voltage and is used for measuring a measurement value of the preset reference power supply voltage at the current moment, wherein the voltage measurement module is based on a ring oscillator.

The chip aging compensation device is connected with the voltage measurement module and used for obtaining a current moment measured value corresponding to a preset reference voltage measured by the voltage measurement module, obtaining the aging degree of the voltage measurement module based on the current moment measured value and a preset first rule, obtaining the aging compensation value corresponding to the aging degree of the key path based on the aging degree of the voltage measurement module and a preset mapping relation of the aging correlation of the voltage measurement module and a chip internal key path, and adjusting the power supply voltage or the working frequency of the chip according to the aging compensation value to perform aging compensation.

The SOC (system on chip) chip may be an SOC chip in which the voltage measurement module and the chip aging compensation device are further integrated on the basis of an SOC chip related to an existing large-scale integrated circuit. The SOC chip involved in the lsi may be various chips such as a processor and a memory.

The chip aging compensation device provided by the SOC chip embodiment has the same implementation principle and technical effect as the foregoing method embodiments, and for the sake of brief description, reference may be made to the corresponding contents in the foregoing method embodiments for the portions of the SOC chip embodiments that are not mentioned.

Based on the same inventive concept, the electronic device provided by the embodiment of the present application includes the SOC chip or the chip aging compensation apparatus. The SOC chip may be a memory or a processor, etc. The electronic device can be a mobile phone, a tablet, a computer, a server and the like.

Based on the same inventive concept, as shown in fig. 5, fig. 5 illustrates a block diagram of an electronic device 200 according to an embodiment of the present application. The electronic device 200 includes: a transceiver 210, a memory 220, a communication bus 230, and a processor 240.

The elements of the transceiver 210, the memory 220, and the processor 240 are electrically connected to each other directly or indirectly to achieve data transmission or interaction. For example, the components may be electrically coupled to each other via one or more communication buses 230 or signal lines. The transceiver 210 is used for transceiving data. The memory 220 is used for storing a computer program such as a software functional module shown in fig. 4, i.e., a chip aging compensation apparatus. The chip aging compensation device includes at least one software functional module, which can be stored in the memory 220 in the form of software or Firmware (Firmware) or is solidified in an Operating System (OS) of the electronic device 200. The processor 240 is configured to execute an executable module stored in the memory 220, such as a software functional module or a computer program included in the chip aging compensation apparatus. For example, the processor 240 is configured to measure a measurement value at a current moment corresponding to a preset reference voltage by using a voltage measurement module, where the voltage measurement module is a voltage measurement module based on a ring oscillator; obtaining the aging degree of the voltage measuring module based on the measured value at the current moment and a preset first rule; obtaining the aging degree of the critical path based on the aging degree of the voltage measurement module and a preset mapping relation representing the aging correlation of the voltage measurement module and the critical path in the chip; obtaining an aging compensation value corresponding to the aging degree of the key path based on the aging degree of the key path and a preset second rule; and adjusting the power supply voltage or the working frequency of the chip according to the aging compensation value to perform aging compensation.

The Memory 220 may be, but is not limited to, a Random Access Memory (RAM), a Read Only Memory (ROM), a Programmable Read-Only Memory (PROM), an Erasable Read-Only Memory (EPROM), an electrically Erasable Read-Only Memory (EEPROM), and the like.

The processor 240 may be an integrated circuit chip having signal processing capabilities. The Processor may be a general-purpose Processor, including a Central Processing Unit (CPU), a Network Processor (NP), and the like; but also Digital Signal Processors (DSPs), Application Specific Integrated Circuits (ASICs), Field Programmable Gate Arrays (FPGAs) or other Programmable logic devices, discrete Gate or transistor logic devices, discrete hardware components. The various methods, steps, and logic blocks disclosed in the embodiments of the present application may be implemented or performed. A general purpose processor may be a microprocessor or the processor 240 may be any conventional processor or the like.

The embodiment of the present application further provides a non-volatile computer-readable storage medium (hereinafter, referred to as a storage medium), where the storage medium stores a computer program, and the computer program is executed by the computer, such as the electronic device 200, to execute the chip aging compensation method described above.

It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other.

In the embodiments provided in the present application, it should be understood that the disclosed apparatus and method can be implemented in other ways. The apparatus embodiments described above are merely illustrative, and for example, the flowchart and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of apparatus, methods and computer program products according to various embodiments of the present application. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.

In addition, functional modules in the embodiments of the present application may be integrated together to form an independent part, or each module may exist separately, or two or more modules may be integrated to form an independent part.

The functions, if implemented in the form of software functional modules and sold or used as a stand-alone product, may be stored in a computer-readable storage medium. Based on such understanding, the technical solutions of the present application may be embodied in the form of a software product stored in a computer-readable storage medium, which includes several instructions for causing a computer device (which may be a personal computer, a notebook computer, a server, or an electronic device) to execute all or part of the steps of the methods described in the embodiments of the present application. And the aforementioned computer-readable storage media comprise: various media capable of storing program codes, such as a usb disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk, or an optical disk.

The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A method for compensating for chip aging, comprising:

measuring a measurement value at the current moment corresponding to a preset reference voltage by using a voltage measurement module, wherein the voltage measurement module is based on a ring oscillator;

obtaining the aging degree of the voltage measuring module based on the measured value at the current moment and a preset first rule;

obtaining the aging degree of the critical path based on the aging degree of the voltage measurement module and a preset mapping relation representing the aging correlation of the voltage measurement module and the critical path in the chip;

obtaining an aging compensation value corresponding to the aging degree of the key path based on the aging degree of the key path and a preset second rule;

and adjusting the power supply voltage or the working frequency of the chip according to the aging compensation value to perform aging compensation.

2. The method of claim 1, wherein the preset first rule comprises a first characteristic equation characterizing a relationship between supply voltage, measurement value and temperature of the voltage measurement module at different aging times, and wherein the method further comprises:

acquiring the environmental temperature at the current moment; accordingly, the number of the first and second electrodes,

obtaining the aging degree of the voltage measurement module based on the measurement value at the current moment and a preset first rule, wherein the aging degree of the voltage measurement module comprises the following steps:

determining an initial measurement value corresponding to the preset reference voltage at the initial moment under the ambient temperature based on the first characteristic equation;

acquiring the measured value variation of the measured value at the current moment and the measured value variation of the initial measured value at the initial moment;

if the measured value variation exceeds a preset threshold value, acquiring a voltage value corresponding to a specified target measured value under the ambient temperature based on the first characteristic equation, and acquiring a voltage variation of the voltage value corresponding to the specified target measured value and an initial voltage value at an initial moment, wherein the voltage variation represents the aging degree of the voltage measurement module.

3. The method of claim 1, wherein the preset first rule comprises a first characteristic equation characterizing a relationship between supply voltage, measurement value and temperature of the voltage measurement module at different aging times, and wherein the method further comprises:

and acquiring the measured value variation of the measured value at the current moment and the measured value variation of the initial measured value at the initial moment, wherein the measured value variation represents the aging degree of the voltage measuring module.

4. The method according to claim 1, wherein if the aging degree of the critical path is characterized by a power supply voltage variation corresponding to the target operating frequency of the chip, the preset second rule includes a second characteristic equation characterizing the relationship among the power supply voltage, the operating frequency and the temperature of the critical path at different aging times; the method further comprises the following steps:

obtaining an aging compensation value corresponding to the aging degree of the critical path based on the aging degree of the critical path and a preset second rule, wherein the aging compensation value comprises:

determining a power supply voltage corresponding to a target working frequency at an initial moment under the environment temperature based on the second characteristic equation;

and obtaining the power supply voltage corresponding to the target working frequency at the current moment based on the power supply voltage variation and the power supply voltage corresponding to the target working frequency, wherein the power supply voltage corresponding to the target working frequency at the current moment is the aging compensation value.

5. The method according to claim 1, wherein if the aging degree of the critical path is characterized by the variation of the operating frequency corresponding to the target power voltage of the chip, the preset second rule includes a second characteristic equation characterizing the relationship among the power voltage, the operating frequency and the temperature of the critical path at different aging times; the method further comprises the following steps:

determining the working frequency corresponding to the target power supply voltage at the initial moment under the environment temperature based on the second characteristic equation;

and obtaining the working frequency corresponding to the target power supply voltage at the current moment based on the working frequency variation and the working frequency corresponding to the target power supply voltage, wherein the working frequency of the target power supply voltage at the current moment is the aging compensation value.

6. The method of claim 1, wherein adjusting the power supply voltage or the operating frequency of the chip according to the aging compensation value for aging compensation comprises:

if the aging compensation value corresponding to the aging degree of the critical path is the working frequency corresponding to the target power supply voltage at the current moment, adjusting the working frequency of the chip to be consistent with the working frequency corresponding to the target power supply voltage at the current moment so as to perform aging compensation;

and if the aging compensation value corresponding to the aging degree of the critical path is the power supply voltage corresponding to the target working frequency at the current moment, adjusting the power supply voltage of the chip to enable the value of the power supply voltage to be consistent with the power supply voltage corresponding to the target working frequency at the current moment so as to perform aging compensation.

7. A method according to claim 2 or 3, characterized in that the method further comprises:

obtaining the measured values of the voltage measuring module under the conditions of different power supply voltages and different temperatures, and fitting to obtain an expression of the relation among the power supply voltages, the measured values and the temperatures at the initial moment;

the method comprises the steps of obtaining corresponding measured values of a voltage measuring module after being processed in different aging times under different power supply voltages and different temperature conditions, fitting to obtain expressions of relationships among the power supply voltages, the measured values and the temperatures in the different aging times, and obtaining a first characteristic equation representing the relationships among the power supply voltages, the measured values and the temperatures of the voltage measuring module in the different aging times, wherein the first characteristic equation comprises the expressions representing the relationships among the power supply voltages, the measured values and the temperatures in the initial time and the expressions representing the relationships among the power supply voltages, the measured values and the temperatures in the different aging times.

8. The method according to claim 4 or 5, characterized in that the method further comprises:

obtaining frequency values of a critical path module under different power supply voltages and different temperatures, and fitting to obtain an expression of relation among the power supply voltages, the frequency values and the temperatures at an initial moment, wherein the critical path module is a ring oscillator composed of logic gate devices in the critical path;

obtaining frequency values of the key path module processed by different aging times under different power supply voltages and different temperature conditions, fitting to obtain expressions of relationships among the power supply voltages, the frequency values and the temperatures under different aging times, and obtaining a second characteristic equation representing the relationships among the power supply voltages, the working frequencies and the temperatures of the key path under different aging times, wherein the second characteristic equation comprises the expressions of the relationships among the power supply voltages, the frequency values and the temperatures at the initial time and the expressions of the relationships among the power supply voltages, the frequency values and the temperatures under different aging times.

9. A chip aging compensation apparatus, comprising:

the voltage measurement module is used for measuring the current time corresponding to the preset reference voltage;

the aging detection module is used for obtaining the aging degree of the voltage measurement module based on the measurement value at the current moment and a preset first rule, obtaining the aging degree of the critical path based on the aging degree of the voltage measurement module and a preset mapping relation representing the aging correlation of the voltage measurement module and a chip internal critical path, and obtaining an aging compensation value corresponding to the aging degree of the critical path based on the aging degree of the critical path and a preset second rule;

10. An SOC chip, comprising:

the voltage measurement module is connected with a preset reference voltage and used for measuring a measurement value of the preset reference voltage at the current moment, wherein the measurement of the voltage measurement module is based on a ring oscillator;

the chip aging compensation device is connected with the voltage measurement module and used for acquiring the measured value at the current moment, acquiring the aging degree of the voltage measurement module based on the measured value at the current moment and a preset first rule, acquiring an aging compensation value corresponding to the aging degree of the key path based on the aging degree of the voltage measurement module and a preset characterization mapping relation of the voltage measurement module and the aging correlation of the key path in the chip, and adjusting the power supply voltage or the working frequency of the chip according to the aging compensation value to perform aging compensation.

11. An electronic device, comprising: comprising a body and a chip degradation compensation device according to claim 9, or a SOC chip according to claim 10.