CN114322585B - High-efficient recovery conversion system of high temperature steel billet infrared radiation waste heat - Google Patents
High-efficient recovery conversion system of high temperature steel billet infrared radiation waste heat Download PDFInfo
- Publication number
- CN114322585B CN114322585B CN202111649133.8A CN202111649133A CN114322585B CN 114322585 B CN114322585 B CN 114322585B CN 202111649133 A CN202111649133 A CN 202111649133A CN 114322585 B CN114322585 B CN 114322585B
- Authority
- CN
- China
- Prior art keywords
- waste heat
- steel billet
- conversion system
- infrared radiation
- temperature steel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 91
- 239000002918 waste heat Substances 0.000 title claims abstract description 54
- 229910000831 Steel Inorganic materials 0.000 title claims abstract description 51
- 239000010959 steel Substances 0.000 title claims abstract description 51
- 238000011084 recovery Methods 0.000 title claims abstract description 31
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 24
- 230000005457 Black-body radiation Effects 0.000 claims abstract description 26
- 230000005540 biological transmission Effects 0.000 claims abstract description 22
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 16
- 239000002041 carbon nanotube Substances 0.000 claims description 16
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 16
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 11
- 229910052732 germanium Inorganic materials 0.000 claims description 10
- 229910052721 tungsten Inorganic materials 0.000 claims description 10
- 239000010937 tungsten Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 239000003292 glue Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 3
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000006229 carbon black Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 claims description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims description 3
- 239000007791 liquid phase Substances 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 238000007738 vacuum evaporation Methods 0.000 claims description 3
- 238000004549 pulsed laser deposition Methods 0.000 claims description 2
- 238000010310 metallurgical process Methods 0.000 abstract description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- 238000010248 power generation Methods 0.000 description 6
- 229910002092 carbon dioxide Inorganic materials 0.000 description 5
- 239000001569 carbon dioxide Substances 0.000 description 5
- 239000004038 photonic crystal Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002893 slag Substances 0.000 description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003546 flue gas Substances 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 238000009628 steelmaking Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 238000004939 coking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention provides a high-efficiency recovery conversion system for infrared radiation waste heat of a high-temperature steel billet, and belongs to the field of waste heat recovery and utilization. The problem that the existing waste heat recovery system cannot effectively and conveniently recover infrared radiation energy in the metallurgical process is solved. The device comprises a blackbody radiation receiver, a selective radiation emitter, an evanescent wave waveguide transmission sheet and a photovoltaic cell, wherein the blackbody radiation receiver is positioned right above a steel billet, the upper part of the blackbody radiation receiver is connected with the selective radiation emitter, and the upper part of the selective radiation emitter is connected with the photovoltaic cell through the evanescent wave waveguide transmission sheet. It is mainly used for recovering and converting the infrared radiation waste heat of high-temperature steel billets.
Description
Technical Field
The invention belongs to the field of waste heat recovery and utilization, and particularly relates to a high-efficiency recovery and conversion system for infrared radiation waste heat of a high-temperature steel billet.
Background
The technology for recycling the high-quality waste heat such as the sensible heat of blast furnace slag, steelmaking slag, raw coke oven gas, pellet waste heat and the like of steel enterprises has been widely studied in recent years. At present, the waste heat power generation in the iron and steel industry mainly comprises the following three methods, namely, generating superheated steam power generation by utilizing the waste heat of flue gas in the coking and sintering processes; secondly, generating saturated steam power by utilizing flue gas waste heat exchange in the steelmaking and steel rolling processes; thirdly, the slag flushing hot water of the blast furnace is utilized for generating electricity. Therefore, the current research direction of waste heat in the steel industry mainly focuses on waste heat recovery technology of waste residues and waste gases in the production process.
However, it has been shown from studies that in metallurgical processes steel mills squeeze billets continuously for 24 hours at temperatures above 1400 ℃. The billets then enter a cooling bed where they are slowly cooled to below 1100 ℃. In this metallurgical production link, a large amount of high quality energy is discharged into the environment in the form of infrared radiation, becoming "unrecoverable" energy in conventional waste heat recovery systems. However, for example, a steel plant having a steel processing area of 2000 square meters is used in which steel billets are continuously exposed to the environment at temperatures above 1127 ℃ during the metallurgical process. This means that only in this steel mill, there may be 5600kW of infrared energy for infrared recycling. The loss of the infrared energy not only quickens the consumption of non-renewable energy sources, but also aggravates the thermal pollution of the environment and enhances the heat island effect of cities. If the "non-recoverable" energy in these conventional waste heat recovery systems is not recovered effectively. Since the infrared energy is very large, the infrared energy has great potential application value in absorption and utilization.
So far, the most widely-focused billet radiation waste heat recovery technology mainly comprises the following two types:
1) Supercritical carbon dioxide (organic working medium) circulation driven by billet radiant energy: the carbon dioxide (organic working medium) heats the carbon dioxide (organic working medium) in the evaporator by utilizing billet radiation energy, then superheated steam is generated to push the expander to generate power for doing work, and finally the cooled carbon dioxide (organic working medium) is sent back to the evaporator by the working medium pump after being cooled in the condenser, so that waste heat energy of recovered exhaust gas is formed in a circulating way.
2) Radiation cooling bed for steel billet: the circulating water in the heat exchanger is directly heated by utilizing the radiation energy of the steel billet, so that the radiation heat of the steel billet is recycled and used for directly heating domestic water.
In all of these waste heat recovery techniques, the energy of the billet is recovered by directly heating domestic water by using the radiant energy of the billet. The technology greatly wastes the energy of high quality of high-temperature billet infrared radiation, and improves the economic benefit of the metallurgical process slightly. Organic Rankine cycle waste heat based on supercritical carbon dioxide (organic working medium) is widely applied to industrial national defense such as ship gas turbine waste heat power generation, ship diesel engine waste heat power generation and the like as the most mature technology in the current waste heat utilization field. However, the volume of the waste heat system is limited by the volume of parts such as an expander in the waste heat circulation, and the volume and the mass of the waste heat system are greatly limited, but when the size of the waste heat system is reduced, the work capacity of the system is severely attenuated. Meanwhile, in the process of recovering and utilizing the radiation energy of the steel billet, the utilization efficiency of the radiation energy of the steel billet can be greatly reduced due to excessive heat transfer links and complex pipeline designs in the organic Rankine cycle. These shortcomings will severely limit the application prospects of the organic Rankine cycle waste heat power generation system in billet radiant energy. Therefore, how to find a billet radiant energy waste heat recovery technology which has the advantages of direct energy recovery and conversion mode, high efficiency, no environmental pollution, long service life of devices and convenient loading and unloading is also slowly apparent, and becomes a key factor for influencing and even restricting the development of the metallurgical waste heat recovery technology.
Disclosure of Invention
In view of the above, the invention aims to provide a high-efficiency recovery conversion system for the infrared radiation waste heat of a high-temperature billet so as to solve the problem that the existing waste heat recovery system cannot effectively and conveniently recover the infrared radiation energy in the metallurgical process.
In order to achieve the above purpose, the present invention adopts the following technical scheme: the high-efficiency recovery conversion system for the infrared radiation waste heat of the high-temperature steel billet comprises a blackbody radiation receiver, a selective radiation emitter, an evanescent wave waveguide transmission sheet and a photovoltaic cell, wherein the blackbody radiation receiver is positioned right above the steel billet, the upper part of the blackbody radiation receiver is connected with the selective radiation emitter, and the upper part of the selective radiation emitter is connected with the photovoltaic cell through the evanescent wave waveguide transmission sheet.
Furthermore, the upper part of the photovoltaic cell is stuck on the heat conducting gasket through heat conducting glue, and the heat conducting gasket is fixed on the photovoltaic cell cooler through threads.
Further, the blackbody radiation receiver is of a metal film structure covered by a carbon nanotube coating, the thickness of the carbon nanotube coating is larger than 1mm, the carbon nanotube coating is prepared by carbon nanotube carbon black solution, the carbon nanotube coating is covered on the metal film through a spraying process, the metal film is made of silver, tin or copper, and the thickness of the metal film is 0.5-1cm.
Further, the selective radiation emitter is composed of a photonic crystal, the photonic crystal is formed by alternately laminating tungsten and germanium, the thickness of a single-layer film of the tungsten is 10nm-200nm, the thickness of a single-layer film of the germanium is 300nm-500nm, and the number of periodical layers is 200-500.
Further, the selective radiation emitter is obtained by periodic deposition of tungsten and germanium by magnetron sputtering, vacuum evaporation, sol-gel or pulsed laser deposition.
Furthermore, the evanescent wave waveguide transmission sheet is an intrinsic GaAs crystal film, and the thickness of the evanescent wave waveguide transmission sheet is 1-1000 mu m.
Furthermore, the evanescent wave waveguide transmission sheet is connected with the selective radiation emitter in a liquid phase epitaxial growth mode.
Further, the photovoltaic cell is a narrow-band photovoltaic cell, the material is a narrow-band semiconductor material, and the forbidden bandwidth is 0.179eV-0.6eV.
Further, the photovoltaic cell is made of mercury cadmium telluride, indium antimonide, gallium antimonide or indium arsenide.
Further, the blackbody radiation receiver is connected with the selective radiation emitter through threads or heat conducting glue, and the steel billet is arranged on the conveyor belt.
Compared with the prior art, the invention has the beneficial effects that:
1) The invention provides a high-efficiency and light infrared radiation absorbing and converting system which is applicable to the high-temperature billet waste heat environment, and on one hand, the system can well convert the high-temperature billet waste heat of infrared radiation into direct-current electric energy which can be directly utilized through a thermophotovoltaic device, and no additional pipeline or mechanical parts are needed. On the other hand, the device is portable enough to ensure that the device occupies as little space as possible. The device has the characteristics of small volume and light weight, and realizes miniaturization and light weight of the waste heat utilization device.
2) According to the infrared radiation absorbing and converting system based on the high-temperature billet infrared radiation waste heat, through the modularized design, each module is independently regulated, and the power is uniformly output to the outside by utilizing the respective transformers. Due to the independent operation between the modules, a failure of a single module does not affect the stable operation of the infrared radiation absorbing and converting system during production.
3) According to the infrared radiation absorbing and converting system based on the infrared radiation waste heat of the high-temperature steel billet, the infrared waste heat of the high-temperature steel billet is covered by the metal film covered by the carbon nano tube coating, the carbon nano tube coating has good radiation absorbing capacity, the absorptivity is larger than 0.98, and the infrared radiation energy of the steel billet can be well converted into the spectrum frequency which can be efficiently utilized by the narrow-band thermal photovoltaic by matching with the selective radiation emitter.
4) The electric power density which can be output by the traditional thermophotovoltaic system under the condition of 1000 ℃ heat source can only be equivalent to the output power density of 730 ℃ heat source of the semiconductor thermoelectric power generation system. The root cause of the low output power density of the traditional (far field) thermophotovoltaic system is that the far field radiant energy input is limited by the blackbody radiation limit, while the near field thermophotovoltaic system can utilize the radiation heat transfer quantity to greatly enhance in the near field (which can exceed the blackbody radiation limit by a plurality of orders of magnitude), thereby greatly improving the output power density of the system. Meanwhile, the spectral energy distribution of the near-field radiation heat transfer can be not limited by the Planck law, and a reliable way is provided for further improving the energy conversion efficiency of the thermal photovoltaic system. Along with the continuous development of the near-field thermophotovoltaic technology theory, theoretical models are becoming more and more perfect, and in recent years, high conversion efficiency of 40% and 11W/cm can be achieved simultaneously under 900K temperature heat source theoretically 2 Has a very large challenge for high output. The infrared radiation absorbing and converting system based on the high-temperature billet infrared radiation waste heat can realize the evanescent wavelength distance transmission principle based on the high-refractive-index dielectric material, and can transmit evanescent wave energy in the selective radiation emitter to the thermophotovoltaic unit, so that the defect that the traditional thermophotovoltaic system is limited by the blackbody radiation limit is overcome. Meanwhile, the high refractive index dielectric material is used for replacing the nanoscale vacuum gap, so that near-field heat can be greatly avoidedThe photovoltaic application condition is too harsh, the manufacturing cost is too high, and the like, and has important significance for improving the radiation industry waste heat conversion technology.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention. In the drawings:
FIG. 1 is a schematic diagram of a high-efficiency recovery conversion system for infrared radiation waste heat of a high-temperature steel billet according to the invention;
fig. 2 is a schematic diagram of a selective radiation emitter according to the present invention.
The device comprises a 1-conveyor belt, a 2-steel billet, a 3-blackbody radiation receiver, a 4-selective radiation emitter, a 5-evanescent wave waveguide transmission sheet, a 6-narrow-band photovoltaic cell, a 7-heat conduction gasket, an 8-photovoltaic cell cooler, 9-tungsten and 10-germanium.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It should be noted that, in the case of no conflict, embodiments of the present invention and features of the embodiments may be combined with each other, and the described embodiments are only some embodiments of the present invention, not all embodiments.
Referring to fig. 1-2 for describing the present embodiment, a high-efficiency recovery conversion system for the residual heat of the infrared radiation of a high-temperature steel billet comprises a blackbody radiation receiver 3, a selective radiation emitter 4, an evanescent wave waveguide transmission sheet 5 and a photovoltaic cell 6, wherein the blackbody radiation receiver 3 is positioned right above the steel billet 2, the upper part of the blackbody radiation receiver 3 is connected with the selective radiation emitter 4, and the upper part of the selective radiation emitter 4 is connected with the photovoltaic cell 6 through the evanescent wave waveguide transmission sheet 5.
The blackbody radiation receiver 3 is arranged above the steel billet 2, the blackbody radiation receiver 3 is used for receiving infrared radiation of the steel billet 2 and converting the infrared radiation energy into heat energy to be transmitted to the selective radiation emitter 4, the selective radiation emitter 4 is used for converting the received heat energy into useful propagation waves and evanescent wave energy to be transmitted to the photovoltaic cell 6 through the evanescent wave waveguide transmission sheet 5, and the photovoltaic cell 6 is used for converting the received useful propagation waves and evanescent wave energy into electric energy through a photoelectric effect.
The upper part of the photovoltaic cell 6 is stuck on the heat conduction gasket 7 through heat conduction glue, and the heat conduction gasket 7 is fixed on the photovoltaic cell cooler 8 through threads. Since a certain temperature difference is ensured between the selective radiation emitter 4 and the photovoltaic cell 6, and the photovoltaic cell 6 is ensured to be at a lower temperature, the dark current intensity of the photovoltaic cell is reduced. It is therefore necessary to design a refrigeration system for the photovoltaic cells 6 to avoid heating up effects on the photovoltaic cells 6 from the unavailable thermal energy in the selective radiation emitter 4. The narrow band semiconductor and the photovoltaic cell cooler 8 are connected by a thermally conductive pad 7. The circulating water in the photovoltaic cell cooler 8 takes away the heat of the photovoltaic cell 6.
The blackbody radiation receiver 3 is composed of a material having a high absorptivity and a high thermal conductivity, preferably a metal film structure covered with a carbon nanotube coating, the thickness of the carbon nanotube coating is greater than 1mm, the carbon nanotube coating is prepared by carbon nanotube carbon black solution, and is covered on the metal film by a spraying process, the material of the metal film is silver, tin or copper, and the thickness of the metal film is 0.5-1cm.
The selective radiation emitter 4 is a photonic crystal supporting broadband hyperbolic excimer in the range of 30-100THz at a high temperature thermal radiation equilibrium state of 700K-1000K. The photonic crystal is formed by alternately laminating and combining tungsten 9 and germanium 10, and the photonic crystal has obvious hyperbolic characteristic in the far infrared spectrum radiation range. The single-layer film thickness of tungsten 9 is 10nm-200nm, the single-layer film thickness of germanium 10 is 300nm-500nm, the periodic layer number is 200-500, the selective radiation emitter 4 is obtained by periodically depositing tungsten 9 and germanium 10 by magnetron sputtering, vacuum evaporation, sol-gel or pulse laser deposition.
The evanescent wave waveguide transmission sheet 5 is made of a dielectric material with high refractive index, high transmittance and low heat conduction, preferably an intrinsic GaAs crystal film, and the thickness of the evanescent wave waveguide transmission sheet 5 is 1-1000 μm. The evanescent waveguide transmission sheet 5 is connected to the selective radiation emitter 4 by means of liquid phase epitaxial growth.
The photovoltaic cell 6 is a narrow-band photovoltaic cell 6, the material is a narrow-band semiconductor material, the forbidden bandwidth is 0.179eV-0.6eV, and the narrow-band photovoltaic cell 6 is preferably made of mercury cadmium telluride, indium antimonide, gallium antimonide or indium arsenide.
The blackbody radiation receiver 3 is connected with the selective radiation emitter 4 through threads or heat conducting glue, and the steel billet 2 is arranged on the conveyor belt 1.
The working principle of the embodiment is as follows: the steel billet 2 is conveyed into an infrared radiation absorption and conversion system through the steel billet conveying belt 1, the steel billet 2 generates infrared radiation of different wave bands at high temperature, the multi-band infrared radiation generated by the steel billet 2 is effectively absorbed and converted into heat energy through the blackbody radiation receiver 3 arranged right above the steel billet 2, the heat of the blackbody radiation receiver 3 is transferred to the selective radiation emitter 4 through the heat conducting glue, and the selective radiation emitter 4 generates stronger radiation energy near the band gap frequency of the narrow-band semiconductor under high-temperature driving. This portion of the radiant energy will contain both evanescent and propagating waves. In a traditional thermophotovoltaic system, only the propagation wave energy emitted by an emitter can be utilized, but the evanescent wave energy generated by the emitter cannot be utilized, so that the superplanck characteristic of thermophotovoltaics cannot be realized. In the present invention, however, the propagating wave will directly penetrate the evanescent wave waveguide transmission sheet 5 with higher transparency to the surface of the photovoltaic cell 6. Evanescent wave energy generated by the selective radiation emitter 4 will be transported to the photovoltaic cell 6 mediated by the evanescent wave waveguide transmission sheet 5. Due to the evanescent wave contribution, the transfer of the selective radiation emitter 4 to the photovoltaic cell 6 will break through the black body planck radiation limit.
After the photovoltaic cell 6 is subjected to radiant energy, the internal PIN junction generates a photoelectric effect on the useful energy to form a current, so that the infrared radiation waste heat of the high-temperature steel billet is directly converted into usable electric energy. The photovoltaic cell cooler 8 is used to dissipate heat from the narrow band photovoltaic cells 6.
The embodiments of the invention disclosed above are intended only to help illustrate the invention. The examples are not intended to be exhaustive or to limit the invention to the precise forms disclosed. Many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best understand and utilize the invention.
Claims (10)
1. A high-efficient recovery conversion system of high temperature steel billet infrared radiation waste heat, its characterized in that: the novel black body radiation device comprises a black body radiation receiver (3), a selective radiation emitter (4), an evanescent wave waveguide transmission sheet (5) and a photovoltaic cell (6), wherein the black body radiation receiver (3) is positioned right above a steel billet (2), the upper part of the black body radiation receiver (3) is connected with the selective radiation emitter (4), and the upper part of the selective radiation emitter (4) is connected with the photovoltaic cell (6) through the evanescent wave waveguide transmission sheet (5).
2. The high-efficiency recovery conversion system for the infrared radiation waste heat of the high-temperature steel billet according to claim 1, which is characterized in that: the photovoltaic cell (6) is adhered to the heat conducting gasket (7) through heat conducting glue, and the heat conducting gasket (7) is fixed on the photovoltaic cell cooler (8) through threads.
3. The high-efficiency recovery conversion system for the infrared radiation waste heat of the high-temperature steel billet according to claim 1, which is characterized in that: the blackbody radiation receiver (3) is of a metal film structure covered by a carbon nano tube coating, the thickness of the carbon nano tube coating is larger than 1mm, the carbon nano tube coating is prepared by carbon nano tube carbon black solution, the carbon nano tube coating is covered on the metal film through a spraying process, the metal film is made of silver, tin or copper, and the thickness of the metal film is 0.5-1cm.
4. The high-efficiency recovery conversion system for the infrared radiation waste heat of the high-temperature steel billet according to claim 1, which is characterized in that: the selective radiation emitter (4) is formed by alternately laminating and combining tungsten (9) and germanium (10), wherein the thickness of a single-layer film of the tungsten (9) is 10-200 nm, the thickness of a single-layer film of the germanium (10) is 300-500 nm, and the number of periodical layers is 200-500.
5. The high-efficiency recovery conversion system for the infrared radiation waste heat of the high-temperature steel billet according to claim 1, which is characterized in that: the selective radiation emitter (4) is obtained by periodic deposition of tungsten (9) and germanium (10) by magnetron sputtering, vacuum evaporation, sol-gel or pulsed laser deposition.
6. The high-efficiency recovery conversion system for the infrared radiation waste heat of the high-temperature steel billet according to claim 1, which is characterized in that: the evanescent wave waveguide transmission sheet (5) is an intrinsic GaAs crystal film, and the thickness of the evanescent wave waveguide transmission sheet (5) is 1-1000 mu m.
7. The high-efficiency recovery conversion system for the infrared radiation waste heat of the high-temperature steel billet according to claim 1, which is characterized in that: the evanescent wave waveguide transmission sheet (5) is connected with the selective radiation emitter (4) through a liquid phase epitaxial growth mode.
8. The high-efficiency recovery conversion system for the infrared radiation waste heat of the high-temperature steel billet according to claim 1, which is characterized in that: the photovoltaic cell (6) is a narrow-band photovoltaic cell (6), the material is a narrow-band semiconductor material, and the forbidden bandwidth is 0.179eV-0.6eV.
9. The high-efficiency recovery conversion system for the infrared radiation waste heat of the high-temperature steel billet according to claim 1 or 8, wherein the high-efficiency recovery conversion system is characterized in that: the photovoltaic cell (6) is made of mercury cadmium telluride, indium antimonide, gallium antimonide or indium arsenide.
10. The high-efficiency recovery conversion system for the infrared radiation waste heat of the high-temperature steel billet according to claim 1, which is characterized in that: the blackbody radiation receiver (3) is connected with the selective radiation emitter (4) through threads or heat conducting glue, and the steel billet (2) is arranged on the conveyor belt (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111649133.8A CN114322585B (en) | 2021-12-29 | 2021-12-29 | High-efficient recovery conversion system of high temperature steel billet infrared radiation waste heat |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111649133.8A CN114322585B (en) | 2021-12-29 | 2021-12-29 | High-efficient recovery conversion system of high temperature steel billet infrared radiation waste heat |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114322585A CN114322585A (en) | 2022-04-12 |
| CN114322585B true CN114322585B (en) | 2023-12-01 |
Family
ID=81018840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111649133.8A Active CN114322585B (en) | 2021-12-29 | 2021-12-29 | High-efficient recovery conversion system of high temperature steel billet infrared radiation waste heat |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114322585B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115013156B (en) * | 2022-06-27 | 2022-12-13 | 哈尔滨工业大学 | Near-field thermophotovoltaic power generation device for recovering waste heat of aviation turbojet engine |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110794595A (en) * | 2019-11-28 | 2020-02-14 | 华中科技大学 | Near-field radiant heat regulator for spherical particle filled liquid crystal |
| CN111609750A (en) * | 2020-05-26 | 2020-09-01 | 上海交通大学 | Method and system for constructing adjustable heat exchange device based on near-field radiation |
| CN113014182A (en) * | 2021-03-05 | 2021-06-22 | 浙江大学 | Energy storage type solar thermal photovoltaic system utilizing near-field thermal radiation technology |
| CN113845082A (en) * | 2021-09-08 | 2021-12-28 | 清华大学 | Radiation heat flow regulation device and application thereof |
-
2021
- 2021-12-29 CN CN202111649133.8A patent/CN114322585B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110794595A (en) * | 2019-11-28 | 2020-02-14 | 华中科技大学 | Near-field radiant heat regulator for spherical particle filled liquid crystal |
| CN111609750A (en) * | 2020-05-26 | 2020-09-01 | 上海交通大学 | Method and system for constructing adjustable heat exchange device based on near-field radiation |
| CN113014182A (en) * | 2021-03-05 | 2021-06-22 | 浙江大学 | Energy storage type solar thermal photovoltaic system utilizing near-field thermal radiation technology |
| CN113845082A (en) * | 2021-09-08 | 2021-12-28 | 清华大学 | Radiation heat flow regulation device and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114322585A (en) | 2022-04-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101826823B (en) | Thermoelectric-conversion solar thermal power generation system | |
| US20070157922A1 (en) | Integrated electrical and thermal energy solar cell system | |
| CN114322585B (en) | High-efficient recovery conversion system of high temperature steel billet infrared radiation waste heat | |
| CN101316083B (en) | Tunnel type waste heat recovery semiconductor power generation device by temperature difference | |
| CN102130106A (en) | Solar cell capable of simultaneously performing photoelectric conversion and thermoelectric conversion | |
| CN102425954A (en) | Blast furnace slag and slag flushing water waste heat organic working medium supercritical generating system | |
| CN102013852B (en) | Fresnel line-focus solar thermoelectric comprehensive utilization system and special device | |
| CN102739115A (en) | Power generating system utilizing internal and external environmental temperature difference of building | |
| Shan et al. | Comparison between spectrum-split conversion and thermophotovoltaic for solar energy utilization: thermodynamic limitation and parametric analysis | |
| CN102446997B (en) | Heat dissipation system applied to light-concentrating solar panel | |
| Zhang et al. | Performance evaluation of an integrated photovoltaic module and cascading thermally regenerative electrochemical devices system | |
| Zhang et al. | Conceptual design and performance optimization of a nighttime electrochemical system for electric power generation via radiative cooling | |
| CN113014182A (en) | Energy storage type solar thermal photovoltaic system utilizing near-field thermal radiation technology | |
| CN201869133U (en) | Thermoelectric conversion type solar thermal power generation system | |
| CN201726340U (en) | Solar photoelectricity and thermoelectricity conversion system | |
| CN111577419A (en) | Brayton cycle system | |
| CN102203958A (en) | Photovoltaic module and photovoltaic system | |
| CN109269311A (en) | A kind of steam Rankine-organic Rankine combined cycle coke oven Waste Heat Recovery electricity generation system | |
| US20210047943A1 (en) | Air energy power machine | |
| CN202918223U (en) | Power generating device utilizing temperature difference between internal and external environments of building | |
| CN102678490B (en) | Hybrid generation system | |
| CN219372082U (en) | Gallium arsenide infrared thermal photovoltaic power generation waste heat recovery device | |
| CN218237890U (en) | System for recycling waste heat of high-temperature workpiece by utilizing molten salt energy reactor | |
| CN202117869U (en) | Solar thermal compound power generation system | |
| CN220552339U (en) | Unit type hot continuous rolling seamless steel pipe cooling bed waste heat recovery device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |