CN114322585A - High-efficiency recovery conversion system for infrared radiation waste heat of high-temperature steel billet - Google Patents
High-efficiency recovery conversion system for infrared radiation waste heat of high-temperature steel billet Download PDFInfo
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Abstract
The invention provides a high-efficiency recovery and conversion system for infrared radiation waste heat of high-temperature steel billets, and belongs to the field of waste heat recovery and utilization. The problem of current waste heat recovery system unable effective and convenient recovery metallurgical in-process infrared radiation energy is solved. The blackbody radiation receiver is located right above a steel billet, the upper portion of the blackbody radiation receiver is connected with the selective radiation emitter, and the upper portion of the selective radiation emitter is connected with the photovoltaic cell through the evanescent waveguide transmission sheet. The method is mainly used for recovering and converting the infrared radiation waste heat of the high-temperature billet.
Description
Technical Field
The invention belongs to the field of waste heat recovery and utilization, and particularly relates to a high-efficiency recovery and conversion system for infrared radiation waste heat of high-temperature billets.
Background
In recent years, extensive research has been conducted on technologies for recycling high-quality waste heat such as blast furnace slag sensible heat, steel making slag, coke oven raw gas, pellet waste heat and the like in iron and steel enterprises. At present, the waste heat power generation in the steel industry mainly comprises the following three methods, namely, the method utilizes the waste heat of flue gas in the coking and sintering processes to exchange heat to generate superheated steam for power generation; secondly, generating power by utilizing the flue gas waste heat of the steel-making and steel-rolling processes to exchange heat to generate saturated steam; thirdly, slag flushing hot water of the blast furnace is utilized to generate electricity. Therefore, the current research direction of the waste heat in the steel industry mainly focuses on the waste heat recovery technology of waste slag and waste gas in the production process.
However, it has been shown from studies that in the metallurgical process, steel mills extrude billets continuously for 24 hours at temperatures above 1400 ℃. The billets then enter a cooling bed where they are slowly cooled to below 1100 c. In this metallurgical production process, a large amount of high quality energy is discharged to the environment in the form of infrared radiation, which becomes "unrecoverable" energy in conventional waste heat recovery systems. However, in the case of a furniture iron and steel plant with a working area of 2000 square meters, there is a continuous exposure of the steel slab to the environment at temperatures above 1127 ℃ during the metallurgical process. This means that in this steel mill only, there may be 5600kW of infrared energy available for infrared recycling. The loss of infrared energy not only accelerates the consumption of non-renewable energy, but also aggravates the thermal pollution of the environment and enhances the heat island effect of cities. If not effectively recovering the "unrecoverable" energy in these conventional waste heat recovery systems. Since the infrared energy is very huge, the absorption and utilization of the infrared energy have great potential application value.
So far, the most widely focused steel billet radiation waste heat recovery technology mainly comprises the following two types:
1) billet radiation energy driven supercritical carbon dioxide (organic working medium) circulation: the carbon dioxide (organic working medium) is heated in the evaporator by utilizing billet radiant energy, then superheated steam is generated to push the expansion machine to generate power to do work, and finally the superheated steam is cooled in the condenser and then is sent back to the evaporator by the working medium pump to form exhaust waste heat energy in a circulating manner.
2) Steel billet radiation type cooling bed: the circulating water in the heat exchanger is directly heated by utilizing the billet steel radiation energy, and further the billet steel radiation heat is recycled and used for directly heating the domestic water.
In all the prior waste heat recovery technologies, billet steel radiant energy is utilized to directly heat domestic water so as to recover billet steel energy. The technology greatly wastes the energy with higher quality of high-temperature billet infrared radiation, and the economic benefit of the metallurgical process is slightly improved. Based on supercritical carbon dioxide (organic working medium) organic Rankine cycle waste heat, the method is the most mature technology in the field of waste heat utilization at present and is widely applied to industrial national defense such as ship gas turbine waste heat power generation, ship diesel engine waste heat power generation and the like. But the volume of the expansion machine and other parts in the waste heat cycle is limited, the volume and the mass of the waste heat system are greatly limited, and when the size of the waste heat system is reduced, the work capacity of the system is severely attenuated. Meanwhile, in the process of recycling and utilizing the radiation energy of the steel billet, the utilization efficiency of the radiation energy of the steel billet can be greatly reduced through excessive heat transfer links and complex pipeline design in the organic Rankine cycle. The defects can seriously limit the application prospect of the organic Rankine cycle waste heat power generation system in billet radiant energy. Therefore, how to find a steel billet radiant energy waste heat recovery technology which has the advantages of direct energy recovery and conversion mode, high efficiency, no environmental pollution, long service life of devices and convenient loading and unloading is slowly highlighted, and the technology becomes a key factor which influences or even restricts the development of the metallurgical waste heat recovery technology.
Disclosure of Invention
In view of this, the present invention aims to provide an efficient recovery and conversion system for infrared radiation waste heat of high-temperature billets, so as to solve the problem that the existing waste heat recovery system cannot effectively and conveniently recover infrared radiation energy in the metallurgical process.
In order to achieve the purpose, the invention adopts the following technical scheme: the utility model provides a conversion system is retrieved to high-efficient of high temperature steel billet infrared radiation waste heat, it includes blackbody radiation receiver, selective radiation transmitter, evanescent waveguide transmission slice and photovoltaic cell, blackbody radiation receiver is located the steel billet directly over, blackbody radiation receiver top links to each other with selective radiation transmitter, selective radiation transmitter top is passed through evanescent waveguide transmission slice and is linked to each other with photovoltaic cell.
Furthermore, the upper part of the photovoltaic cell is attached to a heat conducting gasket through a heat conducting adhesive, and the heat conducting gasket is fixed on the photovoltaic cell cooler through threads.
Furthermore, the black body radiation receiver is of a metal film structure covered by a carbon nano tube coating, the thickness of the carbon nano tube coating is larger than 1mm, the carbon nano tube coating is prepared by a carbon nano tube carbon black solution and is covered on the metal film through a spraying process, the metal film is made of silver, tin or copper, and the thickness of the metal film is 0.5-1 cm.
Furthermore, the selective radiation emitter is composed of a photonic crystal, the photonic crystal is formed by alternating and overlapping layers of tungsten and germanium, the thickness of the tungsten single-layer film is 10nm-200nm, the thickness of the germanium single-layer film is 300nm-500nm, and the number of periodic layers is 200-500 layers.
Furthermore, the selective radiation emitter is obtained by periodic deposition of tungsten and germanium by magnetron sputtering, vacuum evaporation, sol-gel or pulsed laser deposition.
Furthermore, the evanescent wave waveguide transmission sheet is an intrinsic GaAs crystal film, and the thickness of the evanescent wave waveguide transmission sheet is 1-1000 μm.
Furthermore, the evanescent wave waveguide transmission slice is connected with the selective radiation emitter by means of liquid phase epitaxial growth.
Furthermore, the photovoltaic cell is a narrow-band photovoltaic cell made of narrow-band semiconductor materials, and the forbidden band width is 0.179eV to 0.6 eV.
Furthermore, the photovoltaic cell is made of mercury cadmium telluride, indium antimonide, gallium antimonide or indium arsenide.
Furthermore, the black body radiation receiver is connected with the selective radiation emitter through threads or heat conducting glue, and the steel billet is arranged on the conveyor belt.
Compared with the prior art, the invention has the beneficial effects that:
1) the invention provides an efficient and light infrared radiation absorption and conversion system suitable for a high-temperature billet waste heat environment, which can well convert the high-temperature billet infrared radiation waste heat into direct current electric energy capable of being directly utilized through a thermophotovoltaic device on one hand, and does not need additional pipelines and mechanical parts. On the other hand, the device is sufficiently portable to ensure as little space as possible. The waste heat utilization device has the characteristics of small volume and light weight, and realizes the miniaturization and light weight of the waste heat utilization device.
2) According to the infrared radiation absorption and conversion system based on the infrared radiation waste heat of the high-temperature steel billet, through the modular design, each module is independently adjusted, and power is uniformly output to the outside by using the respective transformer. Due to the independent operation of the modules, a failure of a single module does not affect the stable operation of the infrared radiation absorption and conversion system during the production process.
3) According to the infrared radiation absorption and conversion system based on the infrared radiation waste heat of the high-temperature steel billet, the infrared waste heat of the high-temperature steel billet passes through the metal film covered by the carbon nano tube coating, the carbon nano tube coating has good radiation absorption capacity, the absorption rate is greater than 0.98, and the infrared radiation energy of the steel billet can be well converted into the spectral frequency which can be efficiently utilized by narrow-band thermophotovoltaic by matching with the selective radiation emitter.
4) The electric power density which can be output by the traditional thermophotovoltaic system under the condition of a heat source of 1000 ℃ can only be equivalent to the output power density of a heat source of 730 ℃ of a semiconductor thermoelectric power generation system. The root cause of the low output power density of the traditional (far-field) thermophotovoltaic system is that the far-field radiation energy input is limited by the black body radiation limit, while the near-field thermophotovoltaic systemThe system can greatly enhance the radiation heat transfer capacity in the near field (can exceed the blackbody radiation limit by multiple orders of magnitude), thereby greatly improving the output power density of the system. Meanwhile, the spectral energy distribution of near-field radiation heat transfer is not limited by the Planck's law any more, and a reliable way is provided for further improving the energy conversion efficiency of the thermal photovoltaic system. With the continuous development of the near-field thermophotovoltaic technology theory, the theoretical model is more and more perfect, and in recent years, the high conversion efficiency of 40 percent and the high conversion efficiency of 11W/cm can be simultaneously realized theoretically under a heat source with the temperature of 900K2Have significant challenges. The infrared radiation absorption and conversion system based on the high-temperature billet infrared radiation waste heat can realize the evanescent wavelength distance transmission principle based on the high-refractive-index dielectric material, transmits the evanescent wave energy in the selective radiation transmitter to the thermophotovoltaic unit, and overcomes the defect that the traditional thermophotovoltaic system is limited by the radiation limit of a black body. Meanwhile, the dielectric material with high refractive index is used for replacing a nanoscale vacuum gap, so that the defects that the near-field thermophotovoltaic application condition is too harsh, the manufacturing cost is too high and the like can be greatly avoided, and the method has important significance for improving the radiation industry waste heat conversion technology.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate an embodiment of the invention and, together with the description, serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic structural diagram of a high-efficiency recovery and conversion system for infrared radiation waste heat of high-temperature steel billets, according to the invention;
fig. 2 is a schematic diagram of a selective radiation emitter according to the present invention.
The device comprises a conveying belt 1, a steel billet 2, a blackbody radiation receiver 3, a selective radiation emitter 4, an evanescent wave waveguide transmission sheet 5, a narrow-band photovoltaic cell 6, a heat conduction gasket 7, a photovoltaic cell cooler 8, tungsten 9 and germanium 10.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely explained below with reference to the drawings in the embodiments of the present invention. It should be noted that, in the present invention, the embodiments and features of the embodiments may be combined with each other without conflict, and the described embodiments are only a part of the embodiments of the present invention, not all of the embodiments.
Referring to fig. 1-2 to illustrate the embodiment, the high-efficiency recovery and conversion system for the infrared radiation waste heat of the high-temperature steel billet comprises a black body radiation receiver 3, a selective radiation emitter 4, an evanescent wave waveguide transmission sheet 5 and a photovoltaic cell 6, wherein the black body radiation receiver 3 is positioned right above the steel billet 2, the upper part of the black body radiation receiver 3 is connected with the selective radiation emitter 4, and the upper part of the selective radiation emitter 4 is connected with the photovoltaic cell 6 through the evanescent wave waveguide transmission sheet 5.
The blackbody radiation receiver 3 is arranged right above the steel billet 2, the blackbody radiation receiver 3 is used for receiving infrared radiation of the steel billet 2 and converting infrared radiation energy into heat energy to be transmitted to the selective radiation transmitter 4, the selective radiation transmitter 4 is used for converting the heat received by the selective radiation transmitter 4 into useful propagation waves and evanescent wave energy to be transmitted to the photovoltaic cell 6 through the evanescent wave waveguide transmission sheet 5, and the photovoltaic cell 6 is used for converting the received useful propagation waves and evanescent wave energy into electric energy through the photoelectric effect.
The upper part of the photovoltaic cell 6 is adhered to the heat conducting gasket 7 through heat conducting glue, and the heat conducting gasket 7 is fixed on the photovoltaic cell cooler 8 through threads. Since it is ensured that the selective radiation emitter 4 and the photovoltaic cell 6 have a certain temperature difference and that the photovoltaic cell 6 itself is at a lower temperature, the intensity of its own dark current is reduced. It is therefore necessary to design the photovoltaic cell 6 with a refrigeration system for avoiding the heating effect of the photovoltaic cell 6 due to the heat energy that is not available from the selective radiation emitter 4. The narrow-band semiconductor is connected to a photovoltaic cell cooler 8 by means of a thermally conductive gasket 7. The circulating water in the photovoltaic cell cooler 8 takes away the heat of the photovoltaic cells 6.
The blackbody radiation receiver 3 is made of a material with high absorption rate and high heat conduction performance, preferably is a metal film structure covered by a carbon nano tube coating, the thickness of the carbon nano tube coating is larger than 1mm, the carbon nano tube coating is prepared by a carbon nano tube carbon black solution and is covered on the metal film through a spraying process, the metal film is made of silver, tin or copper, and the thickness of the metal film is 0.5-1 cm.
The selective radiation emitter 4 is a photonic crystal which supports broadband hyperbolic excimer within the range of 30-100THz when the high-temperature thermal radiation equilibrium state is 700K-1000K. The photonic crystal is formed by combining alternating superposed layers of tungsten 9 and germanium 10, and the photonic crystal presents remarkable hyperbolic characteristic in a far infrared spectrum radiation range. The thickness of the single-layer film of the tungsten 9 is 10nm-200nm, the thickness of the single-layer film of the germanium 10 is 300nm-500nm, the number of the periodic layers is 200-500 layers, and the selective radiation emitter 4 is obtained by periodically depositing the tungsten 9 and the germanium 10 by magnetron sputtering, vacuum evaporation, sol-gel or pulse laser deposition.
The evanescent wave waveguide transmission sheet 5 is made of a dielectric material with high refractive index, high transmittance and low thermal conductivity, and is preferably an intrinsic GaAs crystal thin film, and the thickness of the evanescent wave waveguide transmission sheet 5 is 1-1000 μm. An evanescent waveguide transmission foil 5 is connected to the selective radiation emitter 4 by means of liquid phase epitaxial growth.
The photovoltaic cell 6 is a narrow-band photovoltaic cell 6 made of narrow-band semiconductor material with the forbidden band width of 0.179-0.6 eV, preferably made of mercury cadmium telluride, indium antimonide, gallium antimonide or indium arsenide.
The black body radiation receiver 3 is connected with the selective radiation emitter 4 through threads or heat conducting glue, and the steel billet 2 is arranged on the conveyor belt 1.
The working principle of the embodiment is as follows: the steel billet 2 is conveyed to an infrared radiation absorption and conversion system through the steel billet conveying belt 1, the steel billet 2 generates infrared radiation with different wave bands at high temperature, the black body radiation receiver 3 arranged right above the steel billet effectively absorbs the multiband infrared radiation generated by the steel billet 2 and converts the multiband infrared radiation into heat energy, the heat of the black body radiation receiver 3 is transmitted to the selective radiation emitter 4 through heat conducting glue, and the selective radiation emitter 4 can generate stronger radiation energy near the band gap frequency of the narrowband semiconductor under the high-temperature driving. This portion of the radiated energy will contain both evanescent and propagating waves. In a traditional thermophotovoltaic system, only propagation wave energy emitted by an emitter can be utilized, and evanescent wave energy generated by the emitter cannot be utilized, so that the superprecian characteristic of thermophotovoltaic cannot be realized. In the invention, the propagating wave directly penetrates the evanescent wave waveguide transmission sheet 5 with higher transparency to the surface of the photovoltaic cell 6. Evanescent wave energy generated by selective radiation emitter 4 will be mediated by evanescent wave waveguide transmission sheet 5 for transport to photovoltaic cell 6. The transfer of the selective radiation emitter 4 to the photovoltaic cell 6 will break the blackbody planckian radiation limit due to the contribution of the evanescent wave.
After the photovoltaic cell 6 is subjected to radiation energy, the PIN junction inside generates photoelectric effect to the useful energy to form current, so that the infrared radiation waste heat of the high-temperature billet is directly converted into usable electric energy. The photovoltaic cell cooler 8 is used to dissipate heat for the narrow band photovoltaic cells 6.
The embodiments of the invention disclosed above are intended merely to aid in the explanation of the invention. The examples are not intended to be exhaustive or to limit the invention to the precise forms disclosed. Many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention.
Claims (10)
1. The utility model provides a high-efficient recovery conversion system of high temperature steel billet infrared radiation waste heat which characterized in that: it includes blackbody radiation receiver (3), selective radiation transmitter (4), evanescent wave waveguide transmission thin slice (5) and photovoltaic cell (6), blackbody radiation receiver (3) are located steel billet (2) directly over, blackbody radiation receiver (3) top links to each other with selective radiation transmitter (4), selective radiation transmitter (4) top is passed through evanescent wave waveguide transmission thin slice (5) and is linked to each other with photovoltaic cell (6).
2. The system of claim 1, wherein the system comprises: the photovoltaic cell is characterized in that the upper part of the photovoltaic cell (6) is adhered to a heat-conducting gasket (7) through a heat-conducting adhesive, and the heat-conducting gasket (7) is fixed on a photovoltaic cell cooler (8) through threads.
3. The system of claim 1, wherein the system comprises: the black body radiation receiver (3) is of a metal film structure covered by a carbon nano tube coating, the thickness of the carbon nano tube coating is larger than 1mm, the carbon nano tube coating is prepared by a carbon nano tube carbon black solution and is covered on a metal film through a spraying process, the metal film is made of silver, tin or copper, and the thickness of the metal film is 0.5-1 cm.
4. The system of claim 1, wherein the system comprises: the selective radiation emitter (4) is composed of photonic crystals, the photonic crystals are formed by alternately stacking tungsten (9) and germanium (10), the thickness of a single-layer film of the tungsten (9) is 10nm-200nm, the thickness of a single-layer film of the germanium (10) is 300nm-500nm, and the number of periodic layers is 200-500 layers.
5. The system of claim 1, wherein the system comprises: the selective radiation emitter (4) is obtained by periodic deposition of tungsten (9) and germanium (10) by magnetron sputtering, vacuum evaporation, sol-gel or pulsed laser deposition.
6. The system of claim 1, wherein the system comprises: the evanescent wave waveguide transmission sheet (5) is an intrinsic GaAs crystal thin film, and the thickness of the evanescent wave waveguide transmission sheet (5) is 1-1000 mu m.
7. The system of claim 1, wherein the system comprises: the evanescent wave waveguide transmission slice (5) is connected with the selective radiation emitter (4) in a liquid phase epitaxial growth mode.
8. The system of claim 1, wherein the system comprises: the photovoltaic cell (6) is a narrow-band photovoltaic cell (6) made of a narrow-band semiconductor material, and the forbidden band width is 0.179eV-0.6 eV.
9. The system of claim 1 or 8, wherein the system comprises: the photovoltaic cell (6) is made of mercury cadmium telluride, indium antimonide, gallium antimonide or indium arsenide.
10. The system of claim 1, wherein the system comprises: the black body radiation receiver (3) is connected with the selective radiation emitter (4) through threads or heat conducting glue, and the steel billet (2) is arranged on the conveyor belt (1).
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| CN115013156A (en) * | 2022-06-27 | 2022-09-06 | 哈尔滨工业大学 | Near-field thermophotovoltaic power generation device for recovering waste heat of aircraft engine |
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| CN110794595A (en) * | 2019-11-28 | 2020-02-14 | 华中科技大学 | Near-field radiant heat regulator for spherical particle filled liquid crystal |
| CN111609750A (en) * | 2020-05-26 | 2020-09-01 | 上海交通大学 | Method and system for constructing adjustable heat exchange device based on near-field radiation |
| CN113014182A (en) * | 2021-03-05 | 2021-06-22 | 浙江大学 | Energy storage type solar thermal photovoltaic system utilizing near-field thermal radiation technology |
| CN113845082A (en) * | 2021-09-08 | 2021-12-28 | 清华大学 | Radiation heat flow regulation device and application thereof |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110794595A (en) * | 2019-11-28 | 2020-02-14 | 华中科技大学 | Near-field radiant heat regulator for spherical particle filled liquid crystal |
| CN111609750A (en) * | 2020-05-26 | 2020-09-01 | 上海交通大学 | Method and system for constructing adjustable heat exchange device based on near-field radiation |
| CN113014182A (en) * | 2021-03-05 | 2021-06-22 | 浙江大学 | Energy storage type solar thermal photovoltaic system utilizing near-field thermal radiation technology |
| CN113845082A (en) * | 2021-09-08 | 2021-12-28 | 清华大学 | Radiation heat flow regulation device and application thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115013156A (en) * | 2022-06-27 | 2022-09-06 | 哈尔滨工业大学 | Near-field thermophotovoltaic power generation device for recovering waste heat of aircraft engine |
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