CN114318282A - Method and apparatus for manufacturing optical film - Google Patents

Method and apparatus for manufacturing optical film Download PDF

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Publication number
CN114318282A
CN114318282A CN202111093101.4A CN202111093101A CN114318282A CN 114318282 A CN114318282 A CN 114318282A CN 202111093101 A CN202111093101 A CN 202111093101A CN 114318282 A CN114318282 A CN 114318282A
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Prior art keywords
chamber
film
film forming
plasma processing
forming chamber
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Inventor
泽田成敏
村上尚史
宫本幸大
伊藤帆奈美
梨木智刚
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Nitto Denko Corp
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Nitto Denko Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/00865—Applying coatings; tinting; colouring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields
    • H05K9/0073—Shielding materials
    • H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
    • H05K9/0084—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a single continuous metallic layer on an electrically insulating supporting structure, e.g. metal foil, film, plating coating, electro-deposition, vapour-deposition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ophthalmology & Optometry (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention provides a method and an apparatus for manufacturing an optical thin film, which are suitable for ensuring a stable low-pressure state of a film forming chamber arranged at a position downstream of a plasma processing chamber in a roll-to-roll process. The manufacturing method of the present invention is a method for manufacturing an optical thin film while conveying a work thin film in a roll-to-roll manner, and includes a step in a plasma processing chamber and a step in a film forming chamber (2 nd film forming chamber). The plasma processing chamber has a 1 st exhaust port disposed upstream of the plasma source in the chamber in the transport direction. In the plasma processing step, the plasma processing chamber is exhausted through the 1 st exhaust port, and the workpiece thin film is subjected to plasma processing. In the film forming step, the film forming chamber is exhausted through the 2 nd exhaust port of the film forming chamber to maintain the pressure in the film forming chamber lower than the pressure in the plasma processing chamber, and film formation is performed on the workpiece thin film by a dry film coating method.

Description

Method and apparatus for manufacturing optical film
Technical Field
The present invention relates to a method for manufacturing an optical film and an apparatus for manufacturing an optical film.
Background
Optical films such as antireflection films, transparent conductive films, and electromagnetic wave shielding films include, for example, a base film and a multilayer film on the base film. The multilayer film includes, for example, a layer having a predetermined optical function (optical functional layer) and a protective layer on the optical functional layer. Such optical films are manufactured, for example, in a so-called roll-to-roll manner. For example, patent document 1 listed below describes a technique relating to a method for producing an optical film.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2017-227898
Disclosure of Invention
Problems to be solved by the invention
In the production process of an optical film by the roll-to-roll method, a long base film is conveyed across a series of process chambers connected in series, and layers are sequentially formed on the base film. Each layer is formed by film formation of a material by a dry film coating method. Such a film formation step is performed, for example, after a step of performing plasma treatment on a substrate on which a material is deposited. In this case, the film formation step (dry coating method) is performed under a pressure condition lower than the pressure of the plasma treatment. That is, the pressure in the process chamber (film forming chamber) in the film forming process is lower than the pressure in the process chamber (plasma processing chamber) in the plasma processing, and a pressure difference is generated between both chambers. Therefore, conventionally, a part of the gas (inert gas, reactive gas, or the like) used for the plasma processing flows into the film forming chamber from the plasma processing chamber. The inflow amount of the gas fluctuates, and accordingly, the pressure in the film forming chamber also fluctuates.
The invention provides a method and an apparatus for manufacturing an optical thin film, which are suitable for ensuring a stable low-pressure state of a film forming chamber arranged at a position downstream of a plasma processing chamber in a roll-to-roll process.
Means for solving the problems
The present invention [1] provides a method for manufacturing an optical thin film, in which an optical thin film is manufactured while conveying a workpiece thin film across a plurality of process chambers connected in series in a roll-to-roll manner, wherein the plurality of process chambers include a plasma processing chamber and a film forming chamber disposed on a downstream side of the plasma processing chamber in a direction of the conveyance, the plasma processing chamber includes a plasma source disposed inside the chamber and has at least one 1 st exhaust port for exhausting gas inside the chamber, the 1 st exhaust port is disposed on an upstream side of the plasma source in the direction of the conveyance, and the film forming chamber has a 2 nd exhaust port for exhausting gas inside the chamber, the method for manufacturing an optical thin film comprising: a plasma processing step of exhausting the plasma processing chamber through the 1 st exhaust port and performing plasma processing on a workpiece thin film in the plasma processing chamber; and a film forming step of forming a film on the workpiece thin film by a dry film coating method in the film forming chamber while maintaining the inside of the film forming chamber at a pressure lower than the pressure in the plasma processing chamber during the plasma processing step by exhausting the film forming chamber through the 2 nd exhaust port.
In the plasma processing step of the method for producing an optical thin film, the plasma processing chamber is evacuated through a 1 st exhaust port disposed upstream of the plasma source in the workpiece thin film transport direction, and the workpiece thin film is subjected to plasma processing (the 1 st exhaust port is disposed on the opposite side of the plasma source from the film forming chamber). Such a structure is suitable for suppressing the gas used in the plasma processing from flowing from the plasma source toward the film forming chamber, and thus is suitable for suppressing the inflow of the gas from the plasma processing chamber to the film forming chamber. Such suppression of gas inflow is suitable for ensuring a stable low-pressure state of the film forming chamber in the film forming process.
The present invention [2] includes the method for manufacturing an optical thin film according to [1], wherein the at least one 1 st exhaust port includes two 1 st exhaust ports facing in a direction orthogonal to the transport direction, and the workpiece thin film is transported so as to pass between the two 1 st exhaust ports in the plasma processing step.
Such a structure is suitable for suppressing inflow of gas from the plasma processing chamber to the film forming chamber during the plasma processing, and therefore is suitable for ensuring a stable low-pressure state of the film forming chamber during the film forming process.
The invention [3] includes the method for producing an optical thin film according to [1] or [2], wherein the plasma processing chamber includes a lid-type housing that surrounds the plasma source, the lid-type housing having an inlet opening and an outlet opening that is disposed downstream of the inlet opening in the transport direction, and the workpiece thin film is transported through the lid-type housing from the inlet opening to the outlet opening in the plasma processing step.
Such a cover-type housing is suitable for suppressing scattering of dust generated by plasma processing of a workpiece thin film, and therefore suitable for suppressing inflow of dust from a plasma processing chamber to a film forming chamber.
The invention [4] comprises the method for producing an optical thin film according to any one of the above [1] to [3], wherein the plasma treatment chamber and the film formation chamber are adjacent to each other.
Such a structure is suitable for downsizing an apparatus for carrying out the method for manufacturing an optical film.
The invention [5] includes the method for manufacturing an optical thin film according to [4], wherein the work thin film is transferred from the plasma processing chamber to the film forming chamber by a 1 st airtight transfer mechanism capable of transferring the work thin film while maintaining airtightness between the plasma processing chamber and the film forming chamber.
Such a structure is suitable for ensuring a pressure difference between the plasma processing chamber (relatively high pressure) and the film forming chamber (relatively low pressure), and thus is suitable for ensuring a stable low pressure state of the film forming chamber in the film forming process.
The present invention [6] includes the method for manufacturing an optical thin film according to any one of [1] to [5], wherein the plurality of process chambers include a post-process chamber disposed downstream of and adjacent to the film forming chamber in the transport direction, the method for manufacturing an optical thin film includes a post-process, the post-process is performed on a workpiece thin film in the post-process chamber after the film forming process, and the film forming process is performed in the film forming chamber while maintaining the inside of the film forming chamber at a pressure lower than a pressure in the post-process chamber during the post-process.
Such a configuration is suitable for downsizing an apparatus for carrying out the method for manufacturing an optical thin film in the case where a post-process is carried out after a film forming process.
The invention [7] includes the method for manufacturing an optical thin film according to [6], wherein the work thin film is transferred from the film forming chamber to the post-process chamber by a 2 nd airtight transfer mechanism capable of transferring the work thin film while maintaining airtightness between the film forming chamber and the post-process chamber.
Such a configuration is suitable for ensuring a pressure difference between the post-process chamber (relatively high pressure) and the film forming chamber (relatively low pressure), and thus is suitable for ensuring a stable low-pressure state of the film forming chamber in the film forming process.
The invention [8] includes the method for producing an optical film according to any one of [1] to [7], wherein the dry coating method in the film forming step is a vacuum evaporation method.
The method for producing an optical thin film according to the present invention is suitable for ensuring a low pressure state required for a film forming chamber when a film forming process by a vacuum deposition method is performed in the film forming chamber.
The present invention [9] provides an optical thin film manufacturing apparatus for manufacturing an optical thin film while conveying a workpiece thin film in a roll-to-roll manner, the optical thin film manufacturing apparatus including a plurality of process chambers including a plasma processing chamber for performing a plasma process on the workpiece thin film and a film forming chamber disposed downstream of the plasma processing chamber in a conveying direction, the film forming chamber being used for forming a film on the workpiece thin film by a dry film coating method, the plurality of process chambers including a plasma source disposed in the chamber and having at least one 1 st exhaust port for exhausting gas from the chamber, the 1 st exhaust port being disposed upstream of the plasma source in the conveying direction and being connected to the 1 st exhaust pump, the film forming chamber has a 2 nd exhaust port for exhausting air into the chamber, and the 2 nd exhaust port is connected to the 2 nd exhaust pump.
In the optical thin film manufacturing apparatus of the present invention, the 1 st exhaust port of the plasma processing chamber is disposed upstream of the plasma source in the chamber in the workpiece thin film conveyance direction in the plasma processing chamber. That is, the 1 st exhaust port is disposed on the opposite side of the plasma source from the film forming chamber in the workpiece thin film conveyance direction. Such a structure is suitable for suppressing a gas used in plasma processing in the plasma processing chamber from flowing from the plasma source toward the film forming chamber when the apparatus is operated, and thus is suitable for suppressing a gas from flowing from the plasma processing chamber into the film forming chamber. Such suppression of gas inflow is suitable for ensuring a stable low-pressure state of the film forming chamber.
The invention [10] includes the optical thin film manufacturing apparatus according to [9], wherein the at least one 1 st exhaust port includes two 1 st exhaust ports facing in a direction orthogonal to the transport direction, each 1 st exhaust port is connected to the 1 st exhaust pump, and a work thin film transport path in the plasma processing chamber extends between the two 1 st exhaust ports.
Such a structure is suitable for suppressing inflow of gas from the plasma processing chamber to the film forming chamber when the apparatus is in operation, and is therefore suitable for ensuring a stable low-pressure state of the film forming chamber.
The invention [11] includes the optical thin film manufacturing apparatus according to [9] or [10], wherein the plasma processing chamber includes a lid-type housing that surrounds the plasma source, the lid-type housing includes an inlet opening portion and an outlet opening portion that is disposed downstream of the inlet opening portion in the transport direction, and a workpiece thin film transport path in the plasma processing chamber extends from the inlet opening portion to the outlet opening portion through the lid-type housing.
Such a cover-type housing is suitable for suppressing scattering of dust generated by plasma processing of a workpiece thin film, and therefore suitable for suppressing inflow of dust from a plasma processing chamber to a film forming chamber.
The invention [12] comprises the optical thin film production apparatus according to any one of [9] to [11], wherein the plasma processing chamber and the film forming chamber are adjacent to each other.
Such a structure is suitable for downsizing an optical film manufacturing apparatus.
The present invention [13] includes the optical thin film manufacturing apparatus according to [12], further comprising a 1 st airtight conveyance mechanism configured to convey the workpiece thin film from the plasma processing chamber to the film forming chamber while maintaining airtightness between the plasma processing chamber and the film forming chamber, the 1 st airtight conveyance mechanism being provided.
Such a structure is suitable for ensuring a pressure difference between the plasma processing chamber (relatively high pressure) and the film forming chamber (relatively low pressure) when the apparatus is in operation, and thus is suitable for ensuring a stable low pressure state of the film forming chamber.
The invention [14] includes the optical thin film manufacturing apparatus according to any one of [9] to [13], wherein the plurality of process chambers further include a subsequent process chamber disposed downstream of the film forming chamber in the transport direction and adjacent to the film forming chamber, and the optical thin film manufacturing apparatus further includes a 2 nd airtight transport mechanism configured to transport the workpiece thin film from the film forming chamber to the subsequent process chamber while maintaining airtightness between the film forming chamber and the subsequent process chamber.
Such a configuration is suitable for ensuring a pressure difference between the post-process chamber (relatively high pressure) and the film forming chamber (relatively low pressure), and thus is suitable for ensuring a stable low-pressure state of the film forming chamber in the film forming process. In addition, the structure in which the film forming chamber and the post-process chamber are adjacent to each other is suitable for downsizing the optical thin film manufacturing apparatus.
The invention [15] includes the optical film production apparatus according to any one of [9] to [14], wherein the film formation chamber is a vacuum deposition chamber in which a vacuum deposition method is performed as the dry coating method.
The optical thin film manufacturing apparatus of the present invention is suitable for ensuring a low pressure state required for a film forming chamber when the film forming chamber is a vacuum deposition chamber.
Drawings
Fig. 1 is a schematic configuration diagram of an embodiment of an optical film manufacturing apparatus according to the present invention.
Fig. 2 is a schematic cross-sectional view of an example of an optical film manufactured by an embodiment of the method for manufacturing an optical film of the present invention.
Fig. 3 is a schematic plan view of the plasma processing chamber shown in fig. 1.
Fig. 4 is a schematic cross-sectional view of the plasma processing chamber shown in fig. 1.
Description of the reference numerals
X, an optical thin film manufacturing apparatus; s, base material; 10. an adhesion layer; 20. an optically functional layer; 21. 1 st high refractive index layer; 22. 1 st low refractive index layer; 23. a 2 nd high refractive index layer; 24. a 2 nd low refractive index layer; 30. an antifouling layer; r1, discharge chamber; r2, take-up chamber; C. a working procedure chamber; c1, the 1 st film forming chamber; c1a, sub-chamber 1; c1b, sub-chamber 2; c2, a junction chamber; c3, plasma processing chamber; c4, 2 nd film forming chamber; c5, examination room; 50. a plasma source; 60. a cover-type housing; 70. the 1 st exhaust port; 303. and (2) an exhaust port.
Detailed Description
The method for manufacturing an optical film of the present invention is a method for manufacturing an optical film while conveying a work film across a plurality of process chambers connected in series in a roll-to-roll manner. The apparatus X shown in fig. 1 is an optical film manufacturing apparatus for carrying out the manufacturing method, and includes a discharge chamber R1, a winding chamber R2, and a plurality of process chambers C. The apparatus X corresponds to an embodiment of the optical thin film manufacturing apparatus of the present invention.
Fig. 2 is a schematic cross-sectional view of an optical film F as an example of an optical film manufactured by the method and apparatus for manufacturing an optical film according to the present invention.
The optical film F is a transparent composite film including a transparent base material S, an adhesion layer 10, an optically functional layer 20, and an antifouling layer 30 in this order in the thickness direction, and is an antireflection film in the present embodiment. The optical film F preferably includes a transparent substrate S, an adhesion layer 10, an optically functional layer 20, and an antifouling layer 30.
The transparent substrate S is, for example, a flexible transparent resin substrate film. As a material of the resin film, a thermoplastic resin having both transparency and strength is preferably used. Examples of such thermoplastic resins include cellulose resins such as triacetyl cellulose, polyester resins, polyethersulfone resins, polysulfone resins, polycarbonate resins, polyamide resins, polyimide resins, polyolefin resins, acrylic resins, norbornene resins, polyarylate resins, polystyrene resins, and polyvinyl alcohol resins. These thermoplastic resins may be used alone or in combination of two or more.
The resin film may contain 1 or two or more kinds of additives. Examples of the additives include ultraviolet absorbers, antioxidants, lubricants, plasticizers, mold release agents, coloring inhibitors, flame retardants, antistatic agents, pigments, and colorants.
The transparent substrate S may have a hard coat layer having a hardness higher than that of the resin thin film on the surface thereof on the side of the adhesion layer 10. The hard coat layer can be formed, for example, by: after a solution containing a curable resin is applied to the resin film to form a coating film, the coating film is dried and cured. The hard coat layer may be an antiglare hard coat layer containing fine particles and having antiglare properties. In this case, fine particles are mixed in the solution for forming the hard coat layer. Examples of the fine particles include silica, alumina, titania, zirconia, calcium oxide, tin oxide, indium oxide, cadmium oxide, and antimony oxide.
From the viewpoint of strength, the thickness of the transparent substrate S is preferably 5 μm or more, more preferably 10 μm or more, and further preferably 20 μm or more. From the viewpoint of handling properties, the thickness of the transparent substrate S is preferably 300 μm or less, and more preferably 200 μm or less. When the transparent substrate S has the hard coat layer, the thickness of the hard coat layer is preferably 0.5 μm or more, and more preferably 1 μm or more, from the viewpoint of securing the hardness of the layer. The thickness of the hard coat layer is, for example, 10 μm or less.
From the viewpoint of transparency, the visible light transmittance of the transparent substrate S is preferably 80% or more, and more preferably 90% or more. The visible light transmittance of the transparent substrate S is, for example, 100% or less.
The surface of the transparent substrate S on the side of the adhesion layer 10 may be subjected to a surface modification treatment. Examples of the surface modification treatment include corona treatment, plasma treatment, ozone treatment, primer treatment, glow treatment, and coupling agent treatment.
The adhesion layer 10 is a layer for ensuring adhesion between the transparent substrate S and the optical function layer 20. Examples of the material of the adhesion layer 10 include metals such as silicon, nickel, chromium, aluminum, tin, gold, silver, platinum, zinc, titanium, tungsten, zirconium, and palladium, alloys of two or more of these metals, and oxides of these metals. From the viewpoint of achieving both of the adhesion to the organic layer (specifically, the transparent substrate S) and the oxide layer (specifically, the 1 st high-refractive-index layer 21) and the transparency of the adhesion layer 10, it is preferable to use silicon oxide (SiOx) as the material of the adhesion layer 10, more preferably SiOx with a small oxygen amount in the stoichiometric composition, and still more preferably SiOx with an x of 1.2 or more and 1.9 or less.
From the viewpoint of ensuring both the adhesion force between the transparent substrate S and the optical function layer 20 and the transparency of the adhesion layer 10, the thickness of the adhesion layer 10 is, for example, 1nm or more, and, for example, 10nm or less.
In the present embodiment, the optical function layer 20 is an antireflection layer for suppressing the reflection intensity of external light, and alternately has a high refractive index layer having a relatively large refractive index and a low refractive index layer having a relatively small refractive index in the thickness direction. In the antireflection layer, the net reflected light intensity is attenuated by the interference action between the reflected lights at the plurality of interfaces in the plurality of thin layers (high refractive index layer, low refractive index layer) constituting the antireflection layer. In the antireflection layer, an interference effect of attenuating the intensity of reflected light can be exhibited by adjusting the optical film thickness (product of refractive index and thickness) of each thin layer. In the present embodiment, the optical function layer 20 as such an antireflection layer specifically includes a 1 st high refractive index layer 21, a 1 st low refractive index layer 22, a 2 nd high refractive index layer 23, and a 2 nd low refractive index layer 24 in this order toward the thickness direction side.
The 1 st high refractive index layer 21 and the 2 nd high refractive index layer 23 are each made of a high refractive index material having a refractive index of preferably 1.9 or more at a wavelength of 550 nm. From the viewpoint of satisfying both the high refractive index and the low absorption of visible light, the high refractive index material includes, for example, niobium oxide (Nb)2O5) Titanium oxide, zirconium oxide, tin-doped indium oxide (ITO) and antimony-doped tin oxide (ATO), with niobium oxide being preferably used.
The 1 st low refractive index layer 22 and the 2 nd low refractive index layer 24 are each made of a low refractive index material having a refractive index of preferably 1.6 or less at a wavelength of 550 nm. From the viewpoint of satisfying both the low refractive index and the low absorption of visible light, examples of the low refractive index material include silicon dioxide (SiO)2) And magnesium fluoride, preferably silicon dioxide is used. As the material of the 2 nd low refractive index layer 24, silica is also preferably used from the viewpoint of securing adhesion between the 2 nd low refractive index layer 24 and the antifouling layer 30.
The stain-proofing layer 30 is a layer having a stain-proofing function in the optical film F, and is disposed on one surface in the thickness direction of the optical functional layer 20. The stain-proofing function of the stain-proofing layer 30 includes a function of suppressing adhesion of contaminants such as hand grease to the exposed surface of the optical film F (the surface of the optical film F on the side opposite to the transparent substrate S) and a function of easily removing the adhered contaminants.
Examples of the material of the antifouling layer 30 include a fluorine-containing organic compound and a fluorine-containing silane compound, and a fluorine-containing organic compound is preferably used.
Examples of the organic compound having a fluorine group include alkoxysilane compounds having a perfluoropolyether group. Examples of the alkoxysilane compound having a perfluoropolyether group include compounds represented by the following general formula (1).
R1－R2－O－(CH2)m－Si(OR3)3 (1)
In the general formula (1), R1The fluorinated hydrocarbon group is a linear or branched fluorinated hydrocarbon group (having a carbon number of, for example, 1 to 20) in which at least one hydrogen atom in the hydrocarbon group is substituted with a fluorine atom, and preferably a perfluorohydrocarbon group in which all hydrogen atoms in the hydrocarbon group are substituted with fluorine atoms.
R2Represents a structure comprising a repeating structure of at least one perfluoropolyether (PFPE) group, preferably a structure comprising a repeating structure of two PFPE groups. Examples of the repeating structure of a PFPE group include a repeating structure of a linear PFPE group and a repeating structure of a branched PFPE group. The repeating structure of the linear PFPE group is represented by, for example, - (OC)nF2n)pA structure represented by (n represents an integer of 1 or more and 20 or less, and p represents an integer of 1 or more and 50 or less). Examples of the repeating structure of the branched PFPE group include those composed of- (OC (CF)3)2)p-structure and the compound represented by- (OCF)2CF(CF3)CF2)p-the structure of the representation. The repeating structure of the PFPE group is preferably a repeating structure of a linear PFPE group, more preferably- (OCF)2)p-and- (OC)2F4)p－。
R3Represents a hydrocarbon group having 1 to 4 carbon atoms, preferably a methyl group.
m represents an integer of 1 or more. M preferably represents an integer of 20 or less, more preferably 10 or less, and still more preferably 5 or less.
Among the alkoxysilane compounds having such a perfluoropolyether group, a compound represented by the following general formula (2) is preferably used.
CF3－(OCF2)q－(OC2F4)r－O－(CH2)3－Si(OCH3)3 (2)
In the general formula (2), q represents an integer of 1 to 50 inclusive, and r represents an integer of 1 to 50 inclusive.
As the alkoxysilane compound having a perfluoropolyether group, a commercially available product can also be used. An example of such a commercially available product is OPTOOL UD509 (a compound represented by the above general formula (2), manufactured by Daiki industries, Ltd.). Further, the alkoxysilane compound having a perfluoropolyether group may be used alone or in combination of two or more.
The thickness of the antifouling layer 30 is preferably 1nm or more, more preferably 2nm or more, and further preferably 3nm or more. The thickness of the antifouling layer 30 is preferably 100nm or less, more preferably 50nm or less, and still more preferably 30nm or less.
From the viewpoint of imparting a high antifouling function to the antifouling layer 30, the pure water contact angle of the antifouling layer 30 is preferably 100 degrees or more, more preferably 102 degrees or more, and still more preferably 105 degrees or more. The pure water contact angle is, for example, 120 degrees or less. The pure water contact angle can be determined as follows: a water droplet having a diameter of 2mm or less was formed on the surface of the antifouling layer 30, and the contact angle of the water droplet with respect to the surface of the antifouling layer 30 was measured.
The apparatus X shown in fig. 1 is an apparatus for carrying out the method for producing an optical film of the present invention while conveying the work film W in a roll-to-roll manner, and includes the discharge chamber R1, the winding chamber R2, and the plurality of process chambers C as described above.
The discharge chamber R1 includes a discharge roller 101 for discharging the workpiece film W. The discharge roll 101 is provided with a transparent substrate S in a roll form as a work film W. In addition, a predetermined number of guide rollers G for guiding the workpiece film W are provided in the discharge chamber R1 as necessary.
The winding chamber R2 includes a winding roller 102 for winding the workpiece film W. In addition, a predetermined number of guide rollers G for guiding the work film W are provided in the take-up chamber R2 as necessary.
The plurality of process chambers C are connected in sequence between the unwinding chamber R1 and the winding chamber R2, and include a 1 st film forming chamber C1, a connection chamber C2, a plasma processing chamber C3, a 2 nd film forming chamber C4, and a check chamber C5.
The 1 st film forming chamber C1 is disposed next to the discharge chamber R1 in the conveying direction D (indicated by an arrow in fig. 1) of the workpiece thin film W, and includes a 1 st sub-chamber C1a disposed on the upstream side and a 2 nd sub-chamber C1b disposed on the downstream side. The 1 st film forming chamber C1 is connected to a vacuum pump, not shown, and is configured to be capable of adjusting the chamber to a predetermined vacuum degree.
The 1 st sub-chamber C1a is provided with a 1 st film forming roller 103 and sputtering chambers 201 to 205. The 1 st film forming roller 103 is a main guide roller for conveying the workpiece film W discharged from the discharge chamber R1 in the 1 st sub-chamber C1 a. The sputtering chambers 201 to 205 are spaces defined in the 1 st chamber C1a, respectively. The sputtering chambers 201 to 205 are arranged along the circumferential direction of the 1 st deposition roller 103, and are opened toward the 1 st deposition roller 103. Cathodes (cathodes 211 to 215) are provided in the sputtering chambers 201 to 205, respectively. A target (not shown) as a film forming material supplying member is disposed on each cathode so as to face the 1 st film forming roller 103. The sputtering chambers 201 to 205 are each provided with a power supply for applying a voltage to the target to generate glow discharge. Examples of the power source include a DC power source, an AC power source, an MF power source, and an RF power source. A predetermined number of guide rollers G for guiding the workpiece film W are provided in the 1 st sub-chamber C1a as necessary. Further, a line (not shown) with a flow rate adjustment valve for introducing an inert gas into the chamber and a line (not shown) with a flow rate adjustment valve for introducing a reactive gas into the chamber are connected to the 1 st sub-chamber C1 a.
The 2 nd sub-chamber C1b includes a 2 nd film forming roller 104 and sputtering chambers 206 to 210. The 2 nd film forming roller 104 is a main guide roller for conveying the workpiece film W in the 2 nd compartment C1 b. The sputtering chambers 206 to 210 are spaces defined in the 2 nd sub-chamber C2 b. The sputtering chambers 206 to 210 are arranged along the circumferential direction of the 2 nd deposition roller 104 and are opened toward the 2 nd deposition roller 104. Cathodes (cathodes 216 to 220) are provided in the sputtering chambers 206 to 210, respectively. A target (not shown) as a film forming material supply member is disposed on each cathode so as to face the 2 nd film forming roller 104. The sputtering chambers 206 to 210 are each provided with a power supply for applying a voltage to the target to generate glow discharge. Examples of the power source include a DC power source, an AC power source, an MF power source, and an RF power source. A predetermined number of guide rollers G for guiding the workpiece film W are provided in the 2 nd sub-chamber C1b as necessary. Further, a line (not shown) with a flow rate adjustment valve for introducing an inert gas into the chamber and a line (not shown) with a flow rate adjustment valve for introducing a reactive gas into the chamber are connected to the 2 nd sub-chamber C1 b.
In the present embodiment, the 2 nd sub-chamber C1b further includes a 1 st optical inspection unit 301, and the 1 st optical inspection unit 301 is configured to monitor the optical characteristics of the workpiece thin film W after passing through the 2 nd deposition roller 104.
The 1 st optical inspection unit 301 includes, for example, a control unit and at least one optical inspection unit. The optical inspection unit includes, for example, a light source as a light irradiation means for irradiating light to the workpiece thin film W, a 1 st light detection unit for detecting the light transmitted through the workpiece thin film W and converting the light into an electric signal, and a 2 nd light detection unit for detecting the light reflected by the workpiece thin film W and converting the light into an electric signal. The light source is capable of varying the wavelength of the illumination light within a predetermined range. The 1 st light detection unit and the 2 nd light detection unit output the converted electric signals to the control unit, respectively. The control unit includes an arithmetic unit. The calculation unit derives, for example, the transmittance and reflectance of the workpiece thin film W at a specific wavelength, and also derives the peak wavelength of the reflectance.
The 1 st optical inspection unit 301 is configured to be capable of measuring optical characteristics of the workpiece thin film W at a plurality of locations in the width direction of the workpiece thin film W. Specifically, in the 1 st optical inspection unit 301, optical inspection units are provided at a plurality of locations in the width direction of the workpiece film W. Alternatively, the 1 st optical inspection unit 301 includes a movable head which includes an optical inspection unit and is movable in the width direction of the workpiece film W.
The connection chamber C2 is disposed next to the 1 st film forming chamber C1 in the conveying direction D of the workpiece thin film W and before the plasma processing chamber C3. The connection chamber C2 is connected to a vacuum pump not shown in the drawings, and is configured to be capable of adjusting the pressure in the chamber. During the operation of the apparatus, the pressure in the connection chamber C2 was maintained at a predetermined pressure between the pressure in the 1 st film forming chamber C1 and the pressure in the plasma processing chamber C3. This ensures a pressure difference between the 1 st film forming chamber C1 and the plasma processing chamber C3. Further, a predetermined number of guide rollers (not shown) for guiding the workpiece film W may be provided in the connection chamber C2 as necessary.
The plasma processing chamber C3 is disposed next to the chamber C2 in the conveyance direction D. The plasma processing chamber C3 is disposed at a position immediately before the upstream side of the 2 nd film forming chamber C4 in the transport direction D, and the plasma processing chamber C3 and the 2 nd film forming chamber C4 are adjacent to each other. The plasma processing chamber C3 is a pre-process chamber with respect to the 2 nd film forming chamber C4.
As shown in fig. 3 and 4, the plasma processing chamber C3 includes a chamber 40, a plasma source 50 disposed in the chamber 40, a lid-type housing 60 surrounding the plasma source 50 in the chamber, and at least one 1 st exhaust port 70 for exhausting the inside of the chamber 40.
The chamber 40 includes a 1 st wall 41, a 2 nd wall 42, a 3 rd wall 43, a 4 th wall 44, a 5 th wall 45, and a 6 th wall 46.
The 1 st wall 41 is a bottom wall of the chamber 40. The 2 nd wall portion 42 is a top wall of the chamber 40. The 1 st wall portion 41 and the 2 nd wall portion 42 are spaced apart in the vertical direction.
The 3 rd wall portion 43 is located on the side of the chamber 40 closer to the connection chamber C2, and has an inlet opening 43a through which the workpiece thin film W can pass. The 4 th wall 44 is located on the 2 nd film forming chamber C4 side of the chamber 40, and has an outlet opening (not shown) through which the workpiece thin film W can pass. The 3 rd wall portion 43 and the 4 th wall portion 44 are spaced apart in the conveying direction D.
The 5 th wall portion 45 and the 6 th wall portion 46 are side walls of the chamber 40 at intervals in a direction orthogonal to the conveying direction D.
The plasma source 50 includes, for example, a pair of electrodes (not shown) for generating plasma. The pair of electrodes is arranged such that the workpiece film W passes between the pair of electrodes.
The cover housing 60 has an inlet opening 61 and an outlet opening 62 disposed downstream of the inlet opening 61 in the conveyance direction D. In the plasma treatment step described later, the workpiece thin film W is conveyed so as to pass through the lid housing 60 from the inlet opening 61 to the outlet opening 62.
The 1 st exhaust port 70 is disposed upstream of the plasma source 50 in the transport direction D. In the present embodiment, the plasma processing chamber C3 includes two exhaust ports 71 and 72 as the 1 st exhaust port 70.
The exhaust port 71 is an opening provided in the 5 th wall portion 45. An exhaust pump 81 as the 1 st exhaust pump is connected to the exhaust port 71. The exhaust port 72 is an opening provided in the 6 th wall portion 46. An exhaust pump 82 as a 1 st exhaust pump is connected to the exhaust port 72. These exhaust ports 71 and 72 are disposed at positions overlapping the workpiece thin film transfer path in the vertical direction. The exhaust ports 71 and 72 face each other in a direction orthogonal to the conveyance direction D. In the plasma processing step described later, the workpiece thin film W is conveyed in the plasma processing chamber C3 so as to pass through between the two exhaust ports 71 and 72.
The 2 nd film forming chamber C4 is disposed downstream of the 1 st film forming chamber C1 in the transport direction D, and is disposed next to the plasma processing chamber C3 in the present embodiment. The 2 nd film forming chamber C4 corresponds to the film forming chamber of the present invention.
The 2 nd film forming chamber C4 includes a material holding portion 302 disposed in the chamber, at least one 2 nd exhaust port 303, and a 2 nd exhaust pump 304 (chamber decompression means). In addition, a predetermined number of guide rollers G for guiding the workpiece thin film W are provided in the 2 nd film forming chamber C4 as necessary.
In the material holding portion 302, a film forming material feeder (not shown) is disposed so as to face the workpiece thin film W conveyed in the 2 nd film forming chamber C4. The material holding unit 302 may be provided with a resistance heating member as a member for heating the film forming material supplying member, a high frequency induction heating member, or an electron beam heating member.
The 2 nd exhaust port 303 is provided in the wall of the 2 nd film forming chamber C4. The 2 nd exhaust pump 304 is a means for reducing the pressure in the 2 nd film forming chamber C4, and is connected to the 2 nd exhaust port 303. The 2 nd exhaust pump 304 includes, for example, an oil rotary pump, a dry pump, a roots pump, a diffusion pump, a cryopump, and a combination thereof.
The inspection chamber C5 is disposed at a position downstream of the 2 nd film forming chamber C4 in the conveyance direction D, and the inspection chamber C5 and the 2 nd film forming chamber C4 are adjacent to each other. The inspection chamber C5 is a post-process chamber with respect to the 2 nd film forming chamber C4. The inspection chamber C5 is disposed at a position immediately before the upstream side of the winding chamber R2 in the conveyance direction D. That is, the inspection chamber C5 is disposed between the 2 nd film forming chamber C4 and the winding chamber R2 in the conveyance direction D. The inspection chamber C5 is provided with a 2 nd optical inspection unit 305 for monitoring the optical characteristics of the workpiece thin film W having passed through the 2 nd film forming chamber C4.
The 2 nd optical inspection unit 305 includes, for example, a control unit and at least one optical inspection unit. The structure of the optical inspection unit and the structure of the control section in the 2 nd optical inspection section 305 are the same as those of the optical inspection unit and the control section in the 1 st optical inspection section 301. In addition, the 2 nd optical inspection unit 305 is configured to be capable of measuring the optical characteristics of the workpiece thin film W at a plurality of locations in the width direction of the workpiece thin film W, as in the 1 st optical inspection unit 301.
In the present embodiment, the apparatus X includes the 1 st airtight conveyance mechanism 310 for adjusting the pressure difference between the 2 nd film forming chamber C4 and a process chamber (a process chamber disposed at a position immediately before the 2 nd film forming chamber C4 and upstream of the 2 nd film forming chamber C4, in the present embodiment, the plasma processing chamber C3) between the two chambers. The 1 st airtight conveyance mechanism 310 is configured to convey the workpiece thin film W from the plasma processing chamber C3 to the 2 nd film forming chamber C4 while maintaining airtightness between the plasma processing chamber C3 and the 2 nd film forming chamber C4. As the 1 st airtight conveyance mechanism 310, for example, each airtight conveyance mechanism described in japanese patent laid-open nos. 2000-225331, 3-31474, 63-72972, and 62-70575 (the same applies to the airtight conveyance mechanism described later) can be used.
In the present embodiment, the apparatus X includes the 2 nd airtight conveyance mechanism 320 for adjusting the pressure difference between the 2 nd film forming chamber C4 and the 2 nd film forming chamber C4 (which is a process chamber disposed at a position subsequent to the 2 nd film forming chamber C4 on the downstream side, and in the present embodiment, the inspection chamber C5). The 2 nd airtight conveyance mechanism 320 is configured to convey the workpiece thin film from the 2 nd film forming chamber C4 to the inspection chamber C5 while maintaining airtightness between the 2 nd film forming chamber C4 and the inspection chamber C5.
The method for manufacturing an optical film according to one embodiment of the present invention is performed using the apparatus X having the above-described configuration. Specifically, the following is described.
The manufacturing method is a method for manufacturing an optical film while conveying a workpiece film W in a roll-to-roll manner, and includes an adhesion layer forming step, an optical function layer forming step, a plasma treatment step, and an antifouling layer forming step in this order.
In this method, the transparent substrate S is discharged as the work film W from the discharge chamber R1. After being discharged from the discharge chamber R1, the work thin film W is transported across a plurality of process chambers C connected in series including the 1 st film forming chamber C1 and the 2 nd film forming chamber C4, and is wound up in the winding chamber R2. The transport speed of the workpiece film W is, for example, 0.4 m/min or more, and, for example, 10 m/min or less.
The bonding layer forming step is performed in the sputtering chamber 201 in the 1 st film forming chamber C1. In this step, the adhesion layer 10 is formed on one surface of the workpiece film W in the thickness direction of the transparent base S by a sputtering method, which is a dry coating method. In the sputtering method, a gas is introduced into a sputtering chamber under vacuum conditions, and a negative voltage is applied to a target disposed on a cathode. As a result, glow discharge is generated to ionize gas atoms, the gas ions bombard the target surface at a high speed, the target material is sputtered from the target surface, and the sputtered target material is deposited on a predetermined surface (in the present embodiment, on the workpiece thin film W). In order to form the metal oxide layer, reactive sputtering is preferable from the viewpoint of film formation rate. In the reactive sputtering, a mixed gas of an inert gas such as argon and oxygen (reactive gas) is used as the gas, and a metal target is used as the target.
In the adhesion layer forming step, for example, an SiOx layer is formed as the adhesion layer 10. In this case, for example, an Si target is used as a target disposed on the cathode 211, and reactive sputtering is performed while introducing argon gas and oxygen gas into the sputtering chamber 201. The ratio of oxygen contained in SiOx can be adjusted by adjusting the flow ratio (sccm) of argon gas and oxygen gas. The pressure in the sputtering chamber 201 during the execution of this step is, for example, 0.1Pa or more, further, for example, 1.0Pa or less, and preferably 0.7Pa or less (the same applies to the pressures in the other sputtering chambers 202 to 210 described later).
An optically functional layer forming step is performed in sputtering chambers 202 to 210 in a 1 st film forming chamber C1. In this step, the optically functional layer 20 is formed on the portion of the work film W (i.e., on the adhesion layer 10) after the adhesion layer forming step, by a sputtering method which is a dry coating method. In the present embodiment, the optical function layer forming step includes the following 1 st high refractive index layer forming step, 1 st low refractive index layer forming step, 2 nd high refractive index layer forming step, and 2 nd low refractive index layer forming step in this order.
The 1 st high refractive index layer forming step is performed in the sputtering chamber 202. In this step, the 1 st high refractive index layer 21 is formed on the adhesion layer 10 in the work film W. In this step, as the 1 st high refractive index layer 21, for example, Nb is formed2O5And (3) a layer. In this case, for example, an Nb target is used as a target disposed on the cathode 212, and reactive sputtering is performed while introducing argon gas and oxygen gas into the sputtering chamber 202. The optical film thickness (product of refractive index and thickness) of the 1 st high refractive index layer 21 formed in this step is, for example, 20nm or more, and is, for example, 55nm or less. The optical film thickness can be adjusted by adjusting the flow rate of the introduced oxygen gas during reactive sputtering, for example (the same applies to the optical film thicknesses of the 1 st low refractive index layer 22, the 2 nd high refractive index layer 23, and the 2 nd low refractive index layer 24).
The 1 st low refractive index layer forming step is performed in the sputtering chamber 203. In this step, the 1 st low refractive index layer 22 is formed on the 1 st high refractive index layer 21 in the work film W. In this step, SiO, for example, is formed as the 1 st low refractive index layer 222And (3) a layer. In this case, for example, an Si target is used as a target disposed on the cathode 213, and reactive sputtering is performed while introducing argon gas and oxygen gas into the sputtering chamber 203. The optical film thickness of the 1 st low refractive index layer 22 formed in this step is, for example, 15nm or more and, for example, 70nm or less.
A2 nd high refractive index layer forming step is performed in the sputtering chambers 204 to 207. In this step, the 2 nd high refractive index layer 23 is formed on the 1 st low refractive index layer 22 in the work film W. In this step, as the 2 nd high refractive index layer 23, for example, Nb is formed2O5And (3) a layer. In this case, for example, Nb targets are used as the targets disposed on the cathodes 214 to 217, and reactive sputtering is performed while introducing argon gas and oxygen gas into the sputtering chambers 204 to 207. Nb is formed in each of the sputtering chambers 204 to 207 in a laminated manner2O5Thin film, thereby forming the 2 nd high refractive index layer 23. The optical film thickness of the 2 nd high refractive index layer 23 formed in this step is, for example, 60nm or more and, for example, 330nm or less.
A2 nd low refractive index layer forming step is performed in the sputtering chambers 208 to 210. In this step, the 2 nd low refractive index layer 24 is formed on the 2 nd high refractive index layer 23 in the work film W. In this step, for example, SiO is formed as the 2 nd low refractive index layer 242And (3) a layer. In this case, for example, Nb targets are used as the targets disposed on the cathodes 218 to 220, and reactive sputtering is performed while introducing argon gas and oxygen gas into the sputtering chambers 208 to 210. SiO is formed in layers in each of the sputtering chambers 208 to 2102Thin film to form 2 nd low refractive index layer 24. The optical film thickness of the 2 nd low refractive index layer 24 formed in this step is, for example, 100nm or more and, for example, 160nm or less.
In the 1 st film forming chamber C1, the 1 st optical inspection unit 301 monitors the optical characteristics of the workpiece thin film W after the optical function layer forming step. Various conditions in the bonding layer forming step and the optical function layer forming step are adjusted as necessary based on the monitoring results. Examples of such conditions include the transport speed of the workpiece thin film W and the sputtering conditions (pressure in the sputtering chamber, flow rate of the used gas, voltage applied to the target, and the like) in the sputtering chambers 201 to 210.
A plasma treatment process is performed in the plasma treatment chamber C3. In the plasma processing step, the plasma processing chamber C3 is exhausted through the 1 st exhaust port 70 (exhaust ports 71, 72), and the workpiece thin film W is subjected to plasma processing. In this step, specifically, the surface of the optical function layer 20 of the work thin film W on which the optical function layer 20 is formed through the 1 st film forming chamber C1 is subjected to plasma treatment. The pressure in the plasma processing chamber C3 during the plasma processing is, for example, 10Pa or less, preferably 5Pa or less, and further, for example, 0.1Pa or more, as long as it is higher than the pressure in the 2 nd film forming chamber C4, which will be described later.
In the 2 nd film forming chamber C4, an antifouling layer forming step (the antifouling layer forming step corresponds to the film forming step in the present invention) is performed. In the antifouling layer forming step, the 2 nd exhaust pump 304 is operated to exhaust the 2 nd film forming chamber C4 through the 2 nd exhaust port 303, thereby maintaining the pressure in the 2 nd film forming chamber C4 at a pressure lower than the pressure in the plasma processing chamber C3 during the plasma processing step. Meanwhile, in this step, in the 2 nd film forming chamber C4, the antifouling layer 30 is formed on the optically functional layer 20 in the workpiece film W by a vacuum deposition method which is a dry film coating method.
In this step, specifically, the film forming material supply member (not shown) disposed in the material holding portion 302 is heated to a predetermined temperature in a state where the inside of the 2 nd film forming chamber C4 is reduced in pressure to a vacuum state through the 2 nd exhaust port 303 by the operation of the 2 nd exhaust pump 304, and a vacuum vapor deposition method is performed. The pressure (1 st pressure) in the 2 nd film forming chamber C4 during the process is lower than the pressure (2 nd pressure) in the plasma processing chamber C3. The 1 st pressure is, for example, 0.1Pa or less, preferably 0.05Pa or less, and further, for example, 1X 10Pa or less, as long as it is lower than the 2 nd pressure－5Pa or above. 1 st pressure and 2 nd pressureThe difference between the forces is preferably 0.1Pa or more, more preferably 0.2Pa or more. The difference between the 1 st pressure and the 2 nd pressure is, for example, 10Pa or less. The heating temperature in this step is, for example, 200 ℃ or higher, and is, for example, 400 ℃ or lower.
In the inspection chamber C5, the optical characteristics of the work film W after the antifouling layer forming step are monitored by the 2 nd optical inspection unit 305. Various conditions in the adhesion layer forming step, the optical function layer forming step, and the antifouling layer forming step are adjusted as necessary based on the monitoring results. Examples of the conditions include the transport speed of the workpiece thin film W, the sputtering conditions in the sputtering chambers 201 to 210 (the pressure in the sputtering chambers, the flow rate of the used gas, the voltage applied to the target, and the like), and the pressure in the 2 nd film forming chamber C4.
The plurality of process chambers C may include an additional plasma processing chamber (not shown) before the 1 st film forming chamber C1 (i.e., between the discharge chamber R1 and the 1 st film forming chamber C1). When the plurality of process chambers C include the plasma processing chamber, the plasma processing chamber performs a plasma process on the surface of the workpiece thin film W (transparent substrate S) on one side in the thickness direction before being conveyed into the 1 st film forming chamber C1. Such plasma treatment is suitable for ensuring the adhesion of the adhesion layer 10 to the transparent base material S and the adhesion of both the optically functional layer 20 and the stain-proofing layer 30 to the transparent base material S through the adhesion layer 10, and for suppressing the peeling of the stain-proofing layer 30.
Instead of the connection chamber C2, the plurality of process chambers C may include an airtight conveyance mechanism between the 1 st film forming chamber C1 and the plasma processing chamber C3, the airtight conveyance mechanism being configured to convey the workpiece thin film W from the 1 st film forming chamber C1 to the plasma processing chamber C3 while maintaining airtightness between the 1 st film forming chamber C1 and the plasma processing chamber C3. Alternatively, the plurality of process chambers C may include, in addition to the connection chamber C2, an airtight conveyance mechanism configured to convey the workpiece thin film W from the connection chamber C2 to the plasma processing chamber C3 while maintaining airtightness between the connection chamber C2 and the plasma processing chamber C3, between the connection chamber C2 and the plasma processing chamber C3.
As described above, the optical film F was produced by the apparatus X.
In the plasma processing step, as described above, the plasma processing chamber C3 is exhausted through the 1 st exhaust port 70 disposed on the upstream side of the plasma source 50 in the transport direction D of the workpiece thin film W in the plasma processing chamber C3, and the workpiece thin film W is subjected to plasma processing (the 1 st exhaust port 70 is disposed on the opposite side of the plasma source 50 from the 2 nd film forming chamber C4). Such a structure is suitable for suppressing the gas used in the plasma treatment from flowing from the plasma source 50 toward the 2 nd film forming chamber C4, and thus is suitable for suppressing the inflow of the gas from the plasma treatment chamber C3 to the 2 nd film forming chamber C4. Such suppression of the inflow of the gas helps to ensure a stable low-pressure state of the 2 nd film forming chamber C4 in the film forming process. In addition, the above-described structure is suitable for suppressing the dust generated by the plasma processing performed on the workpiece thin film W from flowing from the plasma source 50 toward the 2 nd film forming chamber C4, and is therefore suitable for suppressing the dust from flowing from the plasma processing chamber C3 into the 2 nd film forming chamber C4. Such suppression of inflow of dust contributes to the film forming process in the 2 nd film forming chamber C4 under a clean environment.
In the plasma processing step, as described above, the workpiece thin film W is conveyed so as to pass between the two 1 st exhaust ports 70. Such a structure is suitable for suppressing the inflow of gas from the plasma processing chamber C3 to the 2 nd film forming chamber C4 during the plasma processing, and is therefore suitable for ensuring a stable low pressure state of the 2 nd film forming chamber C4 during the film forming process.
In the plasma processing step, as described above, the workpiece thin film W is transported in the plasma processing chamber C3 so as to pass through the lid-type casing 60 surrounding the plasma source 50. Such a cover-type casing 60 is suitable for suppressing scattering of dust generated by the plasma processing of the workpiece thin film W, and thus contributes to suppressing inflow of dust from the plasma processing chamber C3 to the 2 nd film forming chamber C4.
The plasma processing chamber C3 and the 2 nd film forming chamber C4 are adjacent as described above. The 2 nd film forming chamber C4 and the inspection chamber C5 are adjacent to each other as described above. These structures are suitable for miniaturizing the apparatus X.
In the apparatus X, the workpiece thin film W is conveyed from the plasma processing chamber C3 to the 2 nd film forming chamber C4 by the 1 st airtight conveyance mechanism 310 capable of conveying the workpiece thin film W in a state where the airtightness between the plasma processing chamber C3 and the 2 nd film forming chamber C4 is maintained. Such a structure is suitable for ensuring a pressure difference between the plasma processing chamber C3 (relatively high pressure) and the 2 nd film forming chamber C4 (relatively low pressure), and thus is suitable for ensuring a stable low pressure state of the 2 nd film forming chamber C4 in the film forming process.
In the apparatus X, the workpiece thin film W is conveyed from the 2 nd film forming chamber C4 to the subsequent process chamber by the 2 nd airtight conveyance mechanism capable of conveying the workpiece thin film W while maintaining airtightness between the 2 nd film forming chamber C4 and the inspection chamber C5 (subsequent process chamber). Such a structure is suitable for ensuring a pressure difference between the 2 nd film forming chamber C4 (relatively low pressure) and the inspection chamber C5 (relatively high pressure), and thus is suitable for ensuring a stable low pressure state of the 2 nd film forming chamber C4 in the film forming process.
In the method for producing an optical film according to the present invention, in the optical function layer forming step, the optical function layer 20 may be formed by a film forming method other than a dry film coating method, instead of a sputtering method. Examples of the other film formation method include a vacuum deposition method and a CVD method. In the case where the optical function layer 20 is formed by another film formation method, the apparatus X includes a predetermined film formation chamber capable of performing the other film formation method of the optical function layer 20, instead of the 1 st film formation chamber C1.
In the method for producing an optical film of the present invention, in the antifouling layer forming step, the antifouling layer 30 may be formed by a film forming method other than a dry film coating method, instead of the vacuum deposition method. Examples of the other film formation method include a sputtering method and a CVD method. In the case where the antifouling layer 30 is formed by another film formation method, the apparatus X includes a predetermined film formation chamber capable of performing the other film formation method of the antifouling layer 30, instead of the 2 nd film formation chamber C4.
The optical film F may be other optical films than the antireflection film. Examples of the other optical film include a transparent conductive film and an electromagnetic wave shielding film.
When the optical film F is a transparent conductive film, the optically functional layer 20 of the optical film F includes, for example, a 1 st dielectric film, a transparent electrode film such as an ITO film, and a 2 nd dielectric film in this order in the thickness direction. In the optical function layer 20 having such a laminated structure, both visible light transmittance and electrical conductivity can be achieved.
When the optical film F is an electromagnetic wave shielding film, the optical functional layer 20 of the optical film F includes, for example, a metal oxide film and a metal thin film having an electromagnetic wave reflecting function alternately in the thickness direction. In the optical function layer 20 having such a laminated structure, both shielding properties against electromagnetic waves of a specific wavelength and visible light transmittance can be achieved.

Claims (15)

1. A method for manufacturing an optical film while conveying a work film across a plurality of process chambers connected in series in a roll-to-roll manner, wherein the work film is formed on a substrate,
the plurality of process chambers include a plasma processing chamber and a film forming chamber disposed on a downstream side of the plasma processing chamber in the transport direction,
the plasma processing chamber is provided with a plasma source arranged in the chamber, and at least one 1 st exhaust port for exhausting gas in the chamber, wherein the 1 st exhaust port is arranged at a position on the upstream side of the plasma source in the conveying direction,
the film forming chamber has a 2 nd exhaust port for exhausting air into the chamber,
the manufacturing method of the optical film comprises the following steps:
a plasma processing step of exhausting the plasma processing chamber through the 1 st exhaust port and performing plasma processing on a workpiece thin film in the plasma processing chamber; and
and a film forming step of forming a film on the workpiece thin film by a dry film coating method in the film forming chamber while maintaining the inside of the film forming chamber at a pressure lower than the pressure in the plasma processing chamber during the plasma processing step by exhausting the film forming chamber through the 2 nd exhaust port.
2. The method of manufacturing an optical film according to claim 1,
the at least one 1 st exhaust port includes two 1 st exhaust ports opposed in a direction orthogonal to the direction of conveyance,
in the plasma treatment step, the workpiece thin film is conveyed so as to pass between the two 1 st exhaust ports.
3. The method of manufacturing an optical film according to claim 1,
the plasma processing chamber is provided with a cover-type housing surrounding the plasma source, the cover-type housing is provided with an inlet opening part and an outlet opening part which is arranged at a position closer to the downstream of the inlet opening part in the conveying direction,
in the plasma processing step, the workpiece thin film is conveyed so as to pass through the lid-type housing from the inlet opening portion to the outlet opening portion.
4. The method for producing an optical film according to any one of claims 1 to 3,
the plasma processing chamber and the film forming chamber are adjacent.
5. The method of manufacturing an optical film according to claim 4,
the work thin film is conveyed from the plasma processing chamber to the film forming chamber by a 1 st airtight conveyance mechanism capable of conveying the work thin film in a state where airtightness between the plasma processing chamber and the film forming chamber is maintained.
6. The method for producing an optical film according to any one of claims 1 to 3,
the plurality of process chambers include a post-process chamber disposed on a downstream side of the film forming chamber in the transport direction and adjacent to the film forming chamber,
the method for manufacturing an optical thin film includes a post-step of performing the post-step on a work thin film in the post-step chamber after the film forming step,
the film forming step is performed in the film forming chamber while maintaining the pressure in the film forming chamber at a pressure lower than the pressure in the post-step chamber during the post-step performing.
7. The method of manufacturing an optical film according to claim 6,
the work thin film is conveyed from the film forming chamber to the post-process chamber by a 2 nd airtight conveying mechanism capable of conveying the work thin film while maintaining airtightness between the film forming chamber and the post-process chamber.
8. The method for producing an optical film according to any one of claims 1 to 3,
the dry coating method in the film forming step is a vacuum evaporation method.
9. An optical film manufacturing apparatus for manufacturing an optical film while conveying a work film in a roll-to-roll manner,
the optical film manufacturing apparatus comprises a plurality of process chambers, at least one 1 st exhaust pump, at least one 2 nd exhaust pump, and an airtight conveying mechanism connected in sequence,
the plurality of process chambers include a plasma processing chamber for performing a plasma process on a workpiece thin film and a film forming chamber disposed downstream of the plasma processing chamber in the transport direction, the film forming chamber being configured to form a film on the workpiece thin film by a dry film coating method,
the plasma processing chamber is provided with a plasma source arranged in the chamber, and at least one 1 st exhaust port for exhausting gas in the chamber, wherein the 1 st exhaust port is arranged at a position on an upstream side of the plasma source in the conveying direction and is connected with the 1 st exhaust pump,
the film forming chamber has a 2 nd exhaust port for exhausting air into the chamber, and the 2 nd exhaust port is connected to the 2 nd exhaust pump.
10. The optical film manufacturing apparatus as claimed in claim 9,
the at least one 1 st exhaust port includes two 1 st exhaust ports facing in a direction orthogonal to the transport direction, each 1 st exhaust port is connected to the 1 st exhaust pump,
a workpiece film transport path within the plasma processing chamber extends between the two No. 1 exhaust ports.
11. The optical film manufacturing apparatus according to claim 9 or 10,
the plasma processing chamber is provided with a cover-type housing surrounding the plasma source, the cover-type housing is provided with an inlet opening part and an outlet opening part which is arranged at a position closer to the downstream of the inlet opening part in the conveying direction,
a workpiece film transport path in the plasma processing chamber extends through the lid housing from the inlet opening portion to the outlet opening portion.
12. The optical film manufacturing apparatus according to claim 9 or 10,
the plasma processing chamber and the film forming chamber are adjacent.
13. The optical film manufacturing apparatus as claimed in claim 12,
the optical thin film manufacturing apparatus further includes a 1 st airtight conveyance mechanism configured to convey the workpiece thin film from the plasma processing chamber to the film forming chamber while maintaining airtightness between the plasma processing chamber and the film forming chamber.
14. The optical film manufacturing apparatus according to claim 9 or 10,
the plurality of process chambers further include a post-process chamber disposed on a downstream side of the film forming chamber in the transport direction and adjacent to the film forming chamber,
the optical thin film manufacturing apparatus further includes a 2 nd airtight conveyance mechanism configured to convey the workpiece thin film from the film forming chamber to the post-process chamber while maintaining airtightness between the film forming chamber and the post-process chamber.
15. The optical film manufacturing apparatus according to claim 9 or 10,
the film forming chamber is a vacuum deposition chamber in which a vacuum deposition method is performed as the dry film deposition method.
CN202111093101.4A 2020-10-12 2021-09-17 Method and apparatus for manufacturing optical film Pending CN114318282A (en)

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