CN114300621A - Perovskite solar cell and preparation method thereof - Google Patents

Perovskite solar cell and preparation method thereof Download PDF

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CN114300621A
CN114300621A CN202111619810.1A CN202111619810A CN114300621A CN 114300621 A CN114300621 A CN 114300621A CN 202111619810 A CN202111619810 A CN 202111619810A CN 114300621 A CN114300621 A CN 114300621A
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perovskite
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layer
peai
substrate
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尤汀汀
霍晓楠
王科翔
高宇坤
殷鹏刚
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Beihang University
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Abstract

The invention relates to a perovskite solar cell containing an energy level transition layer and a preparation method thereof, wherein the energy level modification layer is generated after modification by EAI and PEAI, on one hand, the EAI can passivate the surface defects of the perovskite layer, and on the other hand, partial EA + ions enter the perovskite lattice to cause lattice expansion and lattice distortion, so that the crystal phase is changed. In addition, EAI provides a riveting site for the PEAI, facilitating preferential deposition of the PEAI to the crystallization site. PEAI can both passivate surface defects and form two-dimensional Perovskites (PEA)2PbI4Local 2D-3D heterostructure is formed, the roughness of the perovskite film is increased, the contact between the perovskite layer and the carbon electrode is improved, and the hydrophobic benzene ring on the PEAI cation can isolate water vapor. The energy level transition layer can passivate surface defects, reduce trap density, reduce carrier recombination and improve energyThe grade matching improves the contact with the carbon electrode, obviously improves the conversion efficiency and stability of the perovskite solar cell, and has wide application prospect and practical significance.

Description

Perovskite solar cell and preparation method thereof
Technical Field
The invention relates to the technical field of solar cells, in particular to a perovskite solar cell and a preparation method thereof.
Background
The lead-calcium-titanium halide ore has excellent photoelectric characteristics of long carrier diffusion length, adjustable band gap, high light absorption coefficient and the like, and is considered to be a promising photovoltaic material. Perovskite Solar Cells (PSCs) have been rapidly developed over the last decade. At present, the photoelectric conversion efficiency reaches 25.7%, and the photoelectric conversion performance can be compared with that of a crystalline silicon solar cell. However, the organic component (e.g., MA) in organic-inorganic hybrid PSCs+And FA+) Are very unstable and are easily volatilized or decomposed under high temperature, high humidity and oxygen attack, resulting in serious degradation or disappearance of the photoelectric properties of the PSCs. In addition, the preparation of organic-inorganic hybrid perovskites generally uses expensive poly [ bis (4-phenyl) (2, 4, 6-tri-phenyl) amine](PTAA), 2, 2 ', 7, 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino]The-9, 9' -spirobifluorene (spiro-OMeTAD) is used as a hole transport layer, which greatly increases the production cost of the organic-inorganic hybrid perovskite and further limits the large-scale application of the hybrid perovskite. Stability and high production costs are great challenges for future scaled applications of perovskite solar cells.
When inorganic cesium ions (Cs) are used+) When the organic cation is replaced, the perovskite material has higher intrinsic stability. The stability of the inorganic perovskite at high temperature is significantly improved due to the absence of volatile organic cations. Cesium-based all-inorganic halide perovskite CsPbX3(X ═ Cl, Br, I) has received extensive attention from researchers due to its excellent thermal stability and photovoltaic properties. Researchers have proved that perovskite materials can be used as photoelectric conversion materials and can also transmit carriers, so that a hole transport layer can be omitted, and a carbon-based all-inorganic perovskite solar cell without the hole transport layer is prepared. The perovskite solar cell has the advantages of simple structure, low preparation cost and short period. However, the stability and efficiency are still low because, on one hand, a large energy barrier exists between the perovskite layer and the carbon electrode, which hinders the rapid separation of holes; on the other hand, there is a phenomenon of poor contact between perovskite layers and carbon electrodes. Due to the fact thatHow to reduce the energy barrier between the perovskite layer and the electrode layer, improve the contact between the perovskite layer and the electrode layer and improve the stability of perovskite is a problem which needs to be solved urgently.
Disclosure of Invention
In order to reduce the energy level barrier between the perovskite layer and the electrode layer and improve the contact between the perovskite layer and the electrode layer, the invention provides a perovskite solar cell with an energy level transition layer and a preparation method thereof. The energy level transition layer provided by the invention can enable the energy levels between the perovskite layer and the electrode layer to be arranged in a gradient manner, reduces the energy level difference, weakens the energy level barrier and enables the hole transfer to be quicker. In addition, the microstructure of the energy level transition layer is regulated, so that the contact between the perovskite layer and the electrode layer can be improved, and the hydrophobicity of the perovskite layer is improved. Therefore, the invention can effectively improve the energy conversion efficiency and stability of the hole-free transport layer carbon-based all-inorganic solar cell, reduces the manufacturing cost, has simple process, is beneficial to promoting the large-scale application of perovskite, and has larger practical significance and wide application prospect.
The perovskite solar cell provided by the invention comprises the following structure: the conductive substrate, the electron transmission layer, the perovskite layer, the energy level transition layer and the carbon electrode layer.
The energy level transition layer has a specific microstructure, moderately increases the surface roughness of the perovskite layer, improves the contact with the carbon electrode, and simultaneously improves the stability of the perovskite layer.
The invention provides a preparation method of a perovskite solar cell, which comprises the following steps:
(1) cleaning a conductive substrate, and assembling an electron transmission layer on a conductive surface of the conductive substrate;
(2) preparing a perovskite precursor according to a certain concentration, dissolving the perovskite precursor in a solvent mixed by DMSO, DMF and 1-methyl-2-pyrrolidone (NMP) in any proportion, and stirring the solution on a hot bench at the temperature of 30-90 ℃ until the solution is clear to prepare a perovskite precursor solution; preparing ethylamine hydroiodide (EAI) solution and phenethylamine hydroiodide (PEAI) solution with certain concentrations, mixing the solutions according to a certain proportion, and uniformly stirring the mixture at the temperature of 30-100 ℃ to prepare mixed solution of EAI and PEAI;
(3) carrying out ozone treatment on the substrate assembled with the electron transport layer for 5-60 min; then transferring the substrate to a spin coater, dripping 30-150 mu L of perovskite precursor solution on the upper surface of the substrate, standing for 2-300 seconds, spin-coating at the speed of 1000-5000rpm for 20-100 seconds, and dripping 50-300 mu L of antisolvent 5-15 seconds before the end of spin-coating; after the spin coating is finished, the substrate is quickly transferred to a hot bench at the temperature of 150-300 ℃ for annealing for 5-120 minutes;
(4) placing the cooled substrate on a spin coater, dropwise adding 30-200 μ L of EAI and PEAI mixed solution on the upper surface of the substrate, rotating at the speed of 500-6000rpm for 5-60 s, and transferring the substrate to a hot stage at 50-150 ℃ for annealing for 2-20 min after the spin coating is finished;
(5) assembling the carbon electrode on the substrate and annealing at 100-150 ℃ for 5-30 min.
And (4) a control group is a perovskite solar cell without the energy level transition layer, and the preparation method is the same except that the step (4) is not included.
The preferable conductive substrate is any one of FTO and ITO;
the preferred electron transport layer is TiO2、SnO2Any one of ZnO and PCBM;
the preferred concentration of perovskite precursor material is 0.7M-1.7M, and the perovskite layer prepared is fully inorganic perovskite CsPbX3(X ═ Br, I) where the element at the X position is Br, any one of I or Br, I mixed in any ratio;
the preferable solvent for preparing the ethylamine hydroiodide (EAI) solution and the phenethylamine hydroiodide (PEAI) solution is any one or a mixture of any several of ethanol, methanol, chlorobenzene and isopropanol in any ratio;
preferably, the concentration of the ethylamine hydroiodide (EAI) solution and the phenylethylamine hydroiodide (PEAI) solution is 0.5mg/ml-30mg/ml, and the mixing volume ratio of the EAI solution to the PEAI solution is (1:9) - (9: 1).
The energy level modification layer is generated after modification of an EAI solution and a PEAI solution, and on one hand, EAI can passivate the defect of the surface of the perovskite layer caused by halogen ion vacancyTrap, on the other hand EA+Ion volume ratio CS+Slightly larger ion volume, part of EA+Ions enter perovskite crystal lattices to replace CS+And then lattice expansion and lattice distortion are caused, so that a crystal phase is changed, a crystal phase heterojunction is formed on the surface of the perovskite, the crystal phase heterojunction can passivate surface defects, non-radiative recombination is inhibited, energy level matching is improved, and the photoelectric conversion efficiency is improved. In addition, the EAI is firstly accumulated at the crystal boundary of the perovskite layer, so that the void at the crystal boundary is filled, the generation of leakage current is reduced, a riveting site is provided for the PEAI, and the PEAI is promoted to be preferentially accumulated at the crystallization position. PEAI can passivate halogen vacancies on the surface and also form two-dimensional Perovskites (PEA)2PbI4. Two-dimensional Perovskite (PEA) formed due to the riveted sites provided by EAI2PbI4The perovskite film layer is not completely covered on the surface of the perovskite film layer, but is mainly concentrated on a grain boundary, a local 2D-3D heterostructure is formed, the roughness of the perovskite film is increased, and therefore the contact between the perovskite layer and the carbon electrode is improved; two-dimensional Perovskite (PEA)2PbI4The trap density can be reduced, the carrier recombination is reduced, the energy level matching is improved, and the hydrophobic benzene ring on the PEAI cation can play a role in isolating water vapor.
The perovskite solar cell has the beneficial effects that an energy level transition layer is formed by a crystalline phase heterojunction generated after modification of an EAI solution and a PEAI solution and a local 2D-3D heterostructure, the energy level of the layer is positioned between a perovskite layer and a carbon electrode layer, a gradient energy level is formed, the energy level barrier between the perovskite layer and the carbon electrode layer is reduced, the transfer speed of a cavity is promoted, the contact between the perovskite layer and the carbon electrode is improved, the trap density is reduced, the carrier recombination is reduced, and the hydrophobic benzene ring on PEAI cations can play a role in isolating water vapor, so that the photoelectric conversion efficiency and the stability of the perovskite solar cell are greatly improved. Promotes the commercialization progress of the perovskite solar cell, and has greater practical significance and wide application prospect.
The invention is further described below with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a perovskite solar cell of the present invention.
1-substrate, 2-electron transport layer, 3-perovskite layer, 4-energy level transition layer and 5-carbon electrode layer.
Fig. 2 is a schematic cross-sectional view of a perovskite solar cell made according to example 1.
FIG. 3 is a surface topography of a perovskite solar cell made according to example 1.
Fig. 4 is a J-V plot of a perovskite solar cell made according to example 1 versus a perovskite solar cell that does not contain a level modifying layer.
Detailed Description
The invention is further described below by way of examples.
Example 1:
(1) cleaning a conductive substrate FTO by deionized water, ethanol, acetone and isopropanol in sequence, spin-coating and sintering TiO on a conductive surface of the FTO2An electron transport layer;
(2) weighing 311.8mg CsI and 220.2mg PbBr2、276.6mg PbI2Dissolving the perovskite precursor in a solvent of DMSO (dimethyl sulfoxide): DMF (9:1), and stirring the solution on a hot bench at 70 ℃ until the solution is clear to prepare a perovskite precursor solution; preparing an ethylamine hydroiodide (EAI) solution with the concentration of 15mg/ml and a phenethylamine hydroiodide (PEAI) solution with the concentration of 15mg/ml, mixing the solutions according to the volume ratio of 1:1, and stirring the solutions uniformly on a magnetic stirring at 30 ℃ to prepare a mixed solution of the EAI and the PEAI;
(3) will carry TiO2Carrying out ozone treatment on the substrate of the electron transport layer for 30 min; then transferring the mixture into a spin coater, dropwise adding 90 mu L of perovskite precursor solution on the upper surface of the mixture, standing for 60 seconds, then spin-coating at the speed of 4000rpm for 60 seconds, and dropwise adding 200 mu L of anti-solvent isopropanol 5 seconds before the end of the spin-coating; after the spin coating is finished, quickly transferring the substrate to a hot table at 250 ℃ for annealing for 20 minutes;
(4) placing the cooled substrate on a spin coater, dropwise adding 150 mu L of EAI and PEAI mixed solution on the upper surface of the substrate, then rotating at 3500rpm for 30 seconds, and transferring the substrate to a 150 ℃ hot table for annealing for 10 minutes after the spin coating is finished;
(5) the carbon slurry was drawn down onto the above substrate and annealed at 150 ℃ for 15 min.
The schematic cross-sectional view and the surface microstructure of the perovskite solar cell prepared in example 1 are shown in fig. 2 and 3, respectively, from which the structures of the layers can be clearly seen, and the energy level transition layer is locally distributed on the surface of the perovskite layer, so that the surface roughness is increased, and the contact with the carbon electrode is improved. As is apparent from fig. 4, the photoelectric conversion efficiency, the open-circuit voltage and the fill factor of the perovskite solar cell containing the energy level modification layer are all significantly improved.
Example 2:
(1) cleaning a conductive substrate ITO (indium tin oxide) by deionized water, ethanol, acetone and isopropanol in sequence, and depositing SnO on a conductive surface of the ITO in a chemical bath deposition mode2An electron transport layer;
(2) 337.7mg CsI and 268.5mg PbBr were weighed out2、0.2886mg PbI2Dissolving the perovskite precursor in a solvent of DMSO (dimethyl sulfoxide): DMF (7: 3), and stirring the solution on a hot table at 90 ℃ until the solution is clear to prepare a perovskite precursor solution; preparing an ethylamine hydroiodide (EAI) solution with the concentration of 30mg/ml and a phenethylamine hydroiodide (PEAI) solution with the concentration of 30mg/ml, mixing the solutions according to the volume ratio of 1:9, and stirring the solutions uniformly on a magnetic stirring at 100 ℃ to prepare a mixed solution of the EAI and the PEAI;
(3) will carry SnO2Carrying out ozone treatment on the substrate of the electron transport layer for 60 min; then transferring the mixture into a spin coater, dropwise adding 150 mu L of perovskite precursor solution on the upper surface of the mixture, standing for 2 seconds, spin-coating at the speed of 5000rpm for 20 seconds, and dropwise adding 300 mu L of anti-solvent isopropanol 15 seconds before the end of the spin-coating; after the spin coating is finished, quickly transferring the substrate to a hot stage at 300 ℃ for annealing for 5 minutes;
(4) placing the cooled substrate on a spin coater, dropwise adding 200 mu L of EAI and PEAI mixed solution on the upper surface of the substrate, rotating at 6000rpm for 5 seconds, and transferring the substrate to a hot table at 100 ℃ for annealing for 20 minutes after the spin coating is finished;
(5) the carbon paste was dropped on the above substrate by dropping carbon and annealed at 150 ℃ for 30 min.
Example 3:
(1) cleaning a conductive substrate ITO by deionized water, ethanol, acetone and isopropanol in sequence, and depositing a ZnO electron transmission layer on a conductive surface of the conductive substrate ITO in a spin coating manner;
(2) 311.8mg CsI and 216.8mg PbBr were weighed out2、293.6mg PbI2Dissolving the perovskite precursor in a mixed solvent of DMSO and DMF, r-GB (r-GB-6: 3: 1), and stirring the solution on a hot bench at 30 ℃ until the solution is clear to prepare a perovskite precursor solution; preparing an ethylamine hydroiodide (EAI) solution with the concentration of 0.5mg/ml and a phenethylamine hydroiodide (PEAI) solution with the concentration of 0.5mg/ml, mixing the solutions according to the volume ratio of 9:1, and stirring the solutions uniformly on a magnetic stirring at 30 ℃ to prepare a mixed solution of the EAI and the PEAI;
(3) carrying out ozone treatment on the substrate with the ZnO electron transport layer for 5 min; then transferring the mixture into a spin coater, dropwise adding 30 mu L of perovskite precursor solution on the upper surface of the mixture, standing for 300 seconds, then spin-coating at the speed of 1000rpm for 100 seconds, and dropwise adding 50 mu L of anti-solvent isopropanol 5 seconds before the end of the spin-coating; after the spin coating is finished, quickly transferring the substrate to a hot stage at 150 ℃ for annealing for 120 minutes;
(4) placing the cooled substrate on a spin coater, dropwise adding 30 mu L of EAI and PEAI mixed solution on the upper surface of the substrate, then rotating at the speed of 500rpm for 60 seconds, and transferring the substrate to a hot table at 150 ℃ for annealing for 2 minutes after the spin coating is finished;
(5) the carbon paste was dropped onto the above substrate by means of screen printing and annealed at 100 ℃ for 5 min.
Example 4:
(1) cleaning a conductive substrate FTO by deionized water, ethanol, acetone and isopropanol in sequence, spin-coating on a conductive surface of the FTO and sintering a compact layer TiO2Sintering a layer of mesoporous TiO after the electron transmission layer2
(2) 415.7mg CsI and 293.6mg PbBr were weighed out2、368.8mg PbI2Dissolving the perovskite precursor in a pure DMSO solvent, and stirring the solution on a hot bench at 60 ℃ until the solution is clear to prepare a perovskite precursor solution; preparing ethylamine hydroiodide (EAI) solution with concentration of 10mg/ml and phenethylamine hydroiodide (PEAI) solution with concentration of 5mg/ml, mixing at a volume ratio of 5:1, and heating at 90 deg.CStirring uniformly by magnetic stirring to prepare a mixed solution of EAI and PEAI;
(3) will carry TiO2Ozone treating the substrate of the electron transport layer for 20 min; then transferring the perovskite precursor solution into a spin coater, dropwise adding 60 mu L of perovskite precursor solution on the upper surface of the perovskite precursor solution, standing for 120 seconds, then spin-coating at 3900rpm for 50 seconds, and dropwise adding 150 mu L of anti-solvent isopropanol 10 seconds before the end of the spin-coating; after the spin coating is finished, quickly transferring the substrate to a hot bench at 200 ℃ for annealing for 60 minutes;
(4) placing the cooled substrate on a spin coater, dropwise adding 100 mu L of EAI and PEAI mixed solution on the upper surface of the substrate, rotating at the speed of 2500rpm for 40 seconds, and transferring the substrate to a heating table at 90 ℃ for annealing for 12 minutes after the spin coating is finished;
(5) and depositing a carbon electrode on the substrate by means of magnetron sputtering and annealing at 120 ℃ for 10 min.
The examples are intended to illustrate the invention and do not limit the scope of the invention. The above-mentioned embodiments, objects, technical solutions and advantages of the present invention are further described in detail, it should be understood that the above-mentioned embodiments are only illustrative of the present invention and are not intended to limit the present invention, and any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (7)

1. A perovskite solar cell comprising the structure: conductive substrate \ electron transport layer \ perovskite layer \ energy level transition layer \ carbon electrode layer: the energy level transition layer has a specific microstructure, moderately increases the surface roughness of the perovskite layer, improves the contact with the carbon electrode, and simultaneously improves the stability of the perovskite layer.
2. A preparation method of a perovskite solar cell comprises the following steps:
(1) cleaning a conductive substrate, and assembling an electron transmission layer on a conductive surface of the conductive substrate;
(2) preparing a perovskite precursor according to a certain concentration, dissolving the perovskite precursor in a solvent formed by mixing DMSO, DMF and NMP in any proportion, and stirring the solution on a hot bench at the temperature of 30-90 ℃ until the solution is clear to prepare a perovskite precursor solution; preparing ethylamine hydroiodide (EAI) solution and phenethylamine hydroiodide (PEAI) solution with certain concentrations, mixing the solutions according to a certain proportion, and uniformly stirring the mixture at the temperature of 30-100 ℃ to prepare mixed solution of EAI and PEAI;
(3) carrying out ozone treatment on the substrate assembled with the electron transport layer for 5-60 min; then transferring the substrate to a spin coater, dripping 30-150 mu L of perovskite precursor solution on the upper surface of the substrate, standing for 2-300 seconds, spin-coating at the speed of 1000-5000rpm for 20-100 seconds, and dripping 50-300 mu L of antisolvent 5-15 seconds before the end of the spin-coating; after the spin coating is finished, the substrate is quickly transferred to a hot bench at the temperature of 150-300 ℃ for annealing for 5-120 minutes;
(4) placing the cooled substrate on a spin coater, dropwise adding 30-200 μ L of EAI and PEAI mixed solution on the upper surface of the substrate, rotating at the speed of 500-6000rpm for 5-60 s, and transferring the substrate to a hot stage at 50-150 ℃ for annealing for 2-20 min after the spin coating is finished;
(5) assembling the carbon electrode on the substrate and annealing at 100-150 ℃ for 5-30 min.
3. The method of claim 2, wherein: the perovskite precursor substance has the mass concentration of 0.7-1.7M, the prepared perovskite layer is fully inorganic perovskite CPbX 3(X ═ Br, I), and the element at the X position is any one of Br and I or the mixture of Br and I in any ratio.
4. The method of claim 2, wherein: the solvent used for preparing the ethylamine hydroiodide (EAI) solution and the phenethylamine hydroiodide (PEAI) solution is any one or a mixture of any several of ethanol, methanol, chlorobenzene and isopropanol in any ratio; the concentration of the prepared ethylamine hydroiodide (EAI) solution and phenethylamine hydroiodide (PEAI) solution is 0.5mg/ml-30mg/ml, and the volume ratio of the EAI solution to the PEAI solution is (1:9) - (9: 1).
5. The method of claim 2, wherein: the energy level modification layer is generated by modifying an EAI solution and a PEAI solution.
6. The method of claim 2, wherein: the conductive substrate is any one of FTO and ITO.
7. The method of claim 2, wherein: the electron transport layer is any one of TiO2, SnO2, ZnO and PCBM.
CN202111619810.1A 2021-12-28 2021-12-28 Perovskite solar cell and preparation method thereof Pending CN114300621A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117042570A (en) * 2023-10-10 2023-11-10 宁德时代新能源科技股份有限公司 Perovskite thin film, perovskite precursor liquid, perovskite battery and electricity utilization device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117042570A (en) * 2023-10-10 2023-11-10 宁德时代新能源科技股份有限公司 Perovskite thin film, perovskite precursor liquid, perovskite battery and electricity utilization device
CN117042570B (en) * 2023-10-10 2024-03-29 宁德时代新能源科技股份有限公司 Perovskite thin film, perovskite precursor liquid, perovskite battery and electricity utilization device

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