CN114284653A - On-chip terahertz switch based on artificial surface plasmon coupling regulation and control - Google Patents
On-chip terahertz switch based on artificial surface plasmon coupling regulation and control Download PDFInfo
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Abstract
The invention discloses an on-chip terahertz switch based on artificial surface plasmon coupling regulation, which comprises an input/output structure, an SSPPs coupling regulation structure, an SSPPs coplanar transmission structure and an SSPPs mode conversion structure, the input/output structure is a standard coplanar waveguide structure, the SSPPs coupling regulation structure comprises a depth gradient periodic groove, an intermediate signal line and a phase change material film, two ends of the depth gradient periodic groove are respectively connected with the input structure and the SSPPs coplanar transmission structure, the phase change material film is embedded in the intermediate signal line corresponding to the SSPPs coupling regulation structure, the SSPPs coplanar transmission structure comprises two groups of symmetrically distributed metal slots and a middle signal line, the SSPPs mode conversion structure is an all-metal mirror symmetry structure of the SSPPs coupling regulation structure, no phase-change material film is embedded, and the middle signal line penetrates through the whole terahertz switch. The terahertz switch can realize terahertz switch regulation and control with large bandwidth, low insertion loss, high switching ratio and low group delay.
Description
Technical Field
The invention relates to an electric control dynamic switch device used in a terahertz waveband, in particular to an on-chip terahertz switch based on artificial surface plasmon coupling regulation and control, and belongs to the technical field of electromagnetic functional devices.
Background
The terahertz switch is one of key devices for realizing signal isolation in systems such as terahertz wireless communication, terahertz radar, terahertz imaging and the like, and is one of the research hotspots of the current terahertz functional device.
At present, the terahertz switch is mainly realized by an on-chip type and a quasi-optical type. For the on-chip switch, high-performance active materials such as InP and GaAs are utilized, and technologies such as 1/4 wavelength matching are combined to realize the design of the terahertz on-chip switch. Documents report that a single-pole double-throw switch working at 122 to 330GHz is realized by using a 50nm grid-line GaAs-based high electron mobility transistor, and the single-pole double-throw switch is realized by using InP DHBT at a frequency band of 220 to 325 GHz. For the quasi-optical switch, the key point is to control the electromagnetic property of the artificial metamaterial through the active material to realize the signal on-off. For example, the electromagnetic wave propagation switch and direction control can be realized through a magnetic super surface based on a resonant coupling array in a literature report; the resonance switch is realized by utilizing the polarization conversion of terahertz in the composite liquid crystal super surface; switchable super-surfaces are realized by using the electromagnetic induced transparency phenomenon.
In recent years, on-chip switches/modulators based on metamaterials have also been reported in the literature. Surface Plasmon Polaritons (SPPs) are electromagnetic slow waves localized on the Surface of a structure. Although the terahertz wave band has strong dispersion characteristics, the characteristics of high field locality, structural robustness and the like still make the terahertz wave band become one of the research hotspots of terahertz wave band transmission structures. This has led to a significant development of SPPs based switching/modulators. According to literature reports, the dispersion characteristics of SPPs can be adjusted by loading phase change materials in an on-chip grating periodic structure, so that the on-off regulation is realized. And the switching is designed by adjusting different duty ratios of SPPs by the Zhang et al, and the minimum insertion loss of the device is-5.5 dB. Meanwhile, in the working frequency range of 220 to 280GHz, the device can provide a regulation depth of more than 12dB, and the modulation depth of the device can reach 36dB at the optimal position.
Generally, the terahertz switch has been greatly improved by virtue of rapid development of active materials such as transistors and artificial metamaterials. However, the rapidly increasing application demands put more stringent index requirements on the terahertz functional device, such as lower insertion loss and higher switching ratio for the terahertz switch. This makes the above mentioned terahertz switches all face significant challenges. For an on-chip switch, the design difficulty of a device is greatly increased and the performance is severely reduced due to the rapidly increased parasitic parameters of a terahertz waveband; for the quasi-optical switch, the processing consistency, the design of an auxiliary feed circuit and the like are all in urgent need to be improved; for on-chip switches based on SPPs, the upper cut-off frequency of SPPs itself limits further improvement of bandwidth, and in addition, on-state light modulation realized by dispersion adjustment is often located in a strong dispersion frequency band of SPPs, possibly resulting in deterioration of system group delay characteristics.
Aiming at the problems in the prior art, in order to realize a terahertz switch with larger bandwidth, lower insertion loss, higher switching ratio and lower group delay, the invention provides an on-chip terahertz switch based on coupling regulation of artificial Surface plasmons (SSPPs). The conversion process of terahertz waves from a quasi-TEM mode to an SSPPs mode is regulated and controlled through the conductivity of a phase-change material film, and the high on-off ratio regulation and control of a quasi-full frequency band are realized by utilizing the wide-spectrum characteristic of a quasi-static field; the terahertz wave transmission with low insertion loss and low group delay is realized by utilizing the weak dispersion transmission form of the SSPPs coplanar transmission structure. Therefore, the on-chip terahertz switch based on SSPPs coupling regulation and control can realize the characteristics of large bandwidth, low insertion loss, high switching ratio and low group delay.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides an on-chip terahertz switch based on coupling regulation of the artificial Surface plasmons (SSPPs). The terahertz switch on the chip controls the coupling conversion between the coplanar waveguide and the SSPPs by embedding the phase-change material film, so that the terahertz signal is switched and controlled. The on-chip terahertz switch has the characteristics of wide frequency spectrum, high switching ratio, low insertion loss, low group delay and the like.
The purpose of the invention is realized by the following technical scheme:
an on-chip terahertz switch based on artificial surface plasmon coupling regulation comprises an input structure, an SSPPs coupling regulation structure, an SSPPs coplanar transmission structure, an SSPPs mode conversion structure and an output structure, wherein the input structure and the output structure respectively comprise two symmetrically distributed grounding metal sheets and a middle signal line, the grounding metal sheets and the middle signal line jointly form a standard coplanar waveguide structure, the SSPPs coupling regulation structure comprises depth gradient periodic grooves, a middle signal line and a phase-change material film, the two groups of depth gradient periodic grooves are symmetrically distributed on two sides of the middle signal line, two ends of the two groups of depth gradient periodic grooves are respectively connected with the input structure and the SSPPs coplanar transmission structure, the phase-change material film is embedded in the middle signal line corresponding to the SSPPs coupling regulation structure, the SSPPs coplanar transmission structure comprises a middle signal line and two groups of metal grooves symmetrically distributed on two sides of the middle signal line, SSPPs mode conversion structure does SSPPs coupling regulation and control the full metal mirror symmetry structure of structure, the middle signal line among the SSPPs mode conversion structure does not have the embedding of phase change material film, two sets of degree of depth gradual change periodic groove's in the SSPPs mode conversion structure both ends respectively with SSPPs coplane transmission structure with output structure connects, middle signal line runs through in whole terahertz switch on the piece based on artifical surface plasmon coupling regulation and control, the line width of middle signal line in each structure is the same.
Further, the phase change material film is VO2Or other materials with phase change properties that produce a metal-to-media transition.
Further, the intermediate signal line in the SSPPs coplanar transmission structure is also embedded with a phase change material film.
Further, the symmetrically distributed metal slots are not limited to slot-like structures, and similar functions can be achieved by using periodic structures with the same topological features.
Furthermore, the line width of the signal line of the input structure and the center distance between the grounding metal sheet and the signal line are adjusted, so that impedance matching between the probe station and the input/output structure coplanar waveguide structure is realized.
Further, a depth gradient contour line of a depth gradient periodic groove in the SSPPs coupling regulation structure is designed, and conversion from a quasi-TEM mode in the coplanar waveguide to an SSPPs mode in the SSPPs coplanar transmission structure is completed.
Further, the length, the width and the thickness of the phase change material film embedded with the signal line in the SSPPs mode conversion structure and the embedding position of the phase change material film are adjusted, so that the insertion loss and the on-off ratio index of the on-chip terahertz switch based on artificial surface plasmon coupling regulation are considered.
Furthermore, the depth, duty ratio and number of the periodic grooves in the SSPPs coplanar transmission structure are adjusted, so that the terahertz wave can realize low-loss and weak-dispersion transmission in an SSPPs mode.
Further, the SSPPs mode conversion structure is used for realizing conversion from the SSPPs mode to the coplanar waveguide quasi-TEM mode, and the output structure is used for realizing terahertz signal output.
Further, the substrate material of the on-chip terahertz switch based on artificial surface plasmon coupling regulation is quartz sapphire or high-resistance silicon.
The working mechanism of the invention is as follows: after the terahertz waves pass through the input structure, the conversion from the quasi-TEM mode to the SSPPs mode is realized in the SSPPs coupling regulation structure; in the conversion process, the induced charge distribution control on the intermediate signal line is realized by controlling the conductivity of the embedded phase-change material film; when the phase-change material film is in a high-conductivity state, the phase-change material film and the middle signal line are matched into a whole, so that an input terahertz signal in a quasi-TEM mode is converted into an SSPPs mode; when the phase change material film is in a low conductivity state, induced charges are accumulated at the film embedded end of the middle signal line, and a quasi-static electric field generated by the induced charges interferes with a mode conversion process in the SSPPs coupling regulation structure, so that terahertz signal turn-off is realized; and finally, the terahertz signal output is realized through the SSPPs mode conversion structure and the output coplanar waveguide structure.
The beneficial results of the invention are: the conversion process of terahertz waves from a quasi-TEM mode to an SSPPs mode is regulated and controlled through the conductivity of a phase-change material film, and the high on-off ratio regulation and control of a quasi-full frequency band are realized by utilizing the wide-spectrum characteristic of a quasi-static field; the terahertz wave transmission with low insertion loss and low group delay is realized by utilizing the weak dispersion transmission form of the SSPPs coplanar transmission structure. Therefore, the on-chip terahertz switch based on SSPPs coupling regulation and control can realize the characteristics of large bandwidth, low insertion loss, high switching ratio and low group delay. The invention has mature processing technology (can be realized by laser etching and fine processing means), is convenient to manufacture and use, can work in the environment of normal temperature and normal pressure, and has good application potential and prospect.
Drawings
FIG. 1 is a schematic structural overhead view of an on-chip terahertz switch based on artificial surface plasmon coupling regulation and control according to the invention;
FIG. 2 is a schematic diagram of dispersion of an SSPPs coplanar transmission structure according to an embodiment;
FIG. 3 shows S for the switch states of the embodiment21A curve;
FIG. 4 illustrates the group delay characteristics of an embodiment;
the labels in the figure are: 1. an input structure; 2. SSPPs coupling regulation structure; 3. SSPPs coplanar transmission structures; 4. SSPPs mode conversion architecture; 5. an output structure; 6. an intermediate signal line; 7. a depth-gradient periodic groove; 8. phase change material VO2A film; 9. the metal grooves are symmetrically distributed.
Detailed Description
The invention is further described below with reference to the figures and examples.
As shown in fig. 1, the on-chip terahertz switch based on artificial surface plasmon coupling regulation and control provided in this embodiment includes an input structure 1, an SSPPs coupling regulation and control structure 2, an SSPPs coplanar transmission structure 3, an SSPPs mode conversion structure 4, and an output structure 5, where the input structure 1 and the output structure 5 respectively include two symmetrically distributed ground metal sheets and an intermediate signal line 6, the ground metal sheetsAnd the middle signal line 6 and the standard coplanar waveguide structure are formed together, and the impedance matching between the input structure 1 and the output structure 5 and the standard probe platform can be realized by adjusting the line width of the middle signal line 6 and the central interval between the grounding metal sheet and the middle signal line 6. The SSPPs coupling regulation structure 2 comprises a depth gradient periodic groove 7, a middle signal line 6 and a phase change material VO2A film 8, two groups of depth gradient periodic grooves 7 are symmetrically distributed at two sides of the middle signal line 6, two ends of the two groups of depth gradient periodic grooves 7 are respectively connected with the input structure 1 and the SSPPs coplanar transmission structure 3, and the phase change material VO2The film 8 is embedded in the middle signal line 6 in the SSPPs coupling regulation structure 2, and the depth of the groove 7 with the gradually-changing depth gradually deepens from left to right. The periodic groove structure gradually increased from the non-periodic groove structure of the input coplanar waveguide to the SSPPs coplanar transmission structure can be realized through the depth gradient periodic groove 7, the depth gradient contour line of the depth gradient periodic groove 7 adopts a linear function, and the phase change material VO is adjusted2The width, length and thickness of the film 7 and the position of the film embedded on the middle signal line 6 can adjust the insertion loss and on-off ratio index of the on-chip terahertz switch based on artificial surface plasmon coupling regulation. The SSPPs coplanar transmission structure 3 comprises a middle signal line 5 and two groups of metal grooves 9 symmetrically distributed on two sides of the middle signal line 5, the working frequency can be lower than the structure cut-off frequency by adjusting the period, duty ratio, depth and the like of the symmetrically distributed metal grooves 9, and the SSPPs weak dispersion mode transmission can be realized by utilizing the coupling between the middle signal line 5 and the symmetrically distributed periodic grooves 9. The SSPPs mode conversion structure 4 is an all-metal mirror symmetry structure of the SSPPs coupling regulation structure 2, and no phase change material VO is arranged on the middle signal line 62And the film 8 is embedded, and two ends of two groups of depth gradient periodic grooves are respectively connected with the SSPPs coplanar transmission structure 3 and the output structure 5. All the intermediate signal lines 6 in the above structure have the same line width and are connected as a whole. The grounding metal sheet, the depth gradient periodic groove 7 and the symmetrically distributed metal grooves 9 in the structure have the same width and are connected into a whole.
When in use, terahertz waves are input from the input structure 1 in a quasi-TEM mode through the standard probe station and coupled at SSPPsThe conversion from the quasi-TEM mode to the SSPPs mode is realized in the combined control structure 2, and the conversion process can be controlled by embedding the phase-change material VO2The conductivity of the film 8 regulates and controls the induced charge distribution on the intermediate signal line 6, and further terahertz switch regulation and control are realized; when the phase change material VO2The thin film 8 is in a high conductivity state, and is integrated with the middle signal line 6 through matching, so that input quasi-TEM mode terahertz waves are converted into an SSPPs mode; when the phase change material VO2The film 8 is in a low conductivity state, induction charges are accumulated at the film embedding end of the middle signal wire 6, and a quasi-static electric field generated by the induction charges interferes with a mode conversion process in the SSPPs coupling regulation structure 2, so that terahertz wave turn-off is realized; the converted SSPPs mode terahertz wave propagates in the SSPPs coplanar transmission structure 3, and propagates in a weak dispersion form when the frequency is lower than the SSPPs cut-to frequency, and propagates in a strong dispersion form when the frequency is equivalent to the SSPPs cut-to frequency, as shown in fig. 2; finally, terahertz signal output is realized through the SSPPs mode conversion structure 4 and the output structure 5; therefore, the on-chip terahertz switch based on artificial surface plasmon coupling regulation can realize terahertz switch regulation with large bandwidth, low insertion loss, high switching ratio and low group delay.
The substrate material used in this embodiment is quartz, the metal structure material is Au, and the phase-change material film is VO2。
The input structure 1 and the output structure 5 adopt standard 50-ohm coplanar waveguide transmission lines, the width of the middle signal line 6 is 20um, the width of the grounding metal sheet is 50um, and the metal sheet interval is 50 um; the SSPPs coupling regulation structure 2 adopts a linear increasing depth gradient contour line, and the depth of the depth gradient periodic groove 7 is linearly increased from 0um to 60 um; the depth of the groove in the SSPPs coplanar transmission structure 3 is 60um, and the width of the groove in the SSPPs coupling regulation structure 2 and the SSPPs coplanar transmission structure 3 is 73um, and the space occupation width is 36 um. Phase change material VO2The film 8 dimensions were 220um × 22um × 4um (length × width × height), described using the public literature reported Drude model parameters, where ∈∞Is 12, omegapThe gamma plasma collision frequency depends on the plasma frequency corresponding to the conductivity.
In other embodiments, the SSPPs are coplanarThe intermediate signal line 6 in the transmission structure 3 may also be embedded in a phase change material VO2A membrane 8.
In other embodiments, the symmetrically distributed metal trenches are not limited to a slot-like structure, and similar functions can be achieved with periodic structures having the same topological features.
The dispersion curve of the unit structure is shown in fig. 2, the cutoff frequency of the SSPPs coplanar transmission structure 3 according to this embodiment is 500GHz, and the weak dispersion structure is selected as the operating frequency range. The simulation result of the S parameter of the on-chip terahertz switch based on artificial surface plasmon coupling regulation and control in this embodiment is shown in fig. 3, and it can be seen that in the range of the frequency of a typical weak dispersion structure from 160 to 280GHz, the insertion loss is 1dB, the switching ratio is 35dB, and the on-chip terahertz switch has the characteristics of large bandwidth, low insertion loss and high switching ratio; the group delay characteristic is shown in fig. 4, and the on-state group delay is better than 1 ps.
The above description is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any modification and replacement based on the technical solution and inventive concept provided by the present invention should be covered within the scope of the present invention.
Claims (5)
1. The utility model provides a terahertz switch on piece based on regulation and control of artifical surface plasmon coupling which characterized in that: the SSPPs coplanar transmission structure comprises an input structure, an SSPPs coupling regulation structure, an SSPPs coplanar transmission structure, an SSPPs mode conversion structure and an output structure, wherein the input structure and the output structure respectively comprise two symmetrically distributed grounding metal sheets and a middle signal line, the grounding metal sheets and the middle signal line jointly form a standard coplanar waveguide structure, the SSPPs coupling regulation structure comprises depth gradient periodic grooves, a middle signal line and a phase-change material film, the two groups of depth gradient periodic grooves are symmetrically distributed on two sides of the middle signal line, two ends of the two groups of depth gradient periodic grooves are respectively connected with the input structure and the SSPPs coplanar transmission structure, the phase-change material film is embedded into the middle signal line corresponding to the SSPPs coupling regulation structure, the SSPPs coplanar transmission structure comprises a middle signal line and two groups of metal grooves symmetrically distributed on two sides of the middle signal line, the SSPPs mode conversion structure is an all-metal mirror symmetry structure of the SSPPs coupling regulation structure, the middle signal line in the SSPPs mode conversion structure is not embedded in a phase change material film, two ends of two groups of depth gradient periodic grooves in the SSPPs mode conversion structure are respectively connected with the SSPPs coplanar transmission structure and the output structure, the middle signal line penetrates through the whole on-chip terahertz switch based on artificial surface plasmon coupling regulation, and the line width of the middle signal line in each structure is the same.
2. The on-chip terahertz switch based on artificial surface plasmon coupling regulation and control of claim 1, characterized in that: the phase-change material film is VO2Or other materials with phase change properties that produce a metal-to-media transition.
3. The on-chip terahertz switch based on artificial surface plasmon coupling regulation and control of claim 1, characterized in that: and a phase change material film is also embedded in the middle signal line in the SSPPs coplanar transmission structure.
4. The on-chip terahertz switch based on artificial surface plasmon coupling regulation and control of claim 1, characterized in that: the symmetrically distributed metal slots are not limited to slot-like structures and can achieve similar functions by using periodic structures with the same topological characteristics.
5. The on-chip terahertz switch based on artificial surface plasmon coupling regulation and control of claim 1, characterized in that: the substrate material of the on-chip terahertz switch based on artificial surface plasmon coupling regulation is quartz sapphire or high-resistance silicon.
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