CN114284237A

CN114284237A - Metal wiring layer structure with power management function and preparation method thereof

Info

Publication number: CN114284237A
Application number: CN202111594772.9A
Authority: CN
Inventors: 李宗怿; 倪洽凯; 丁晓春; 王亚男; 刘籽余
Original assignee: Changdian Integrated Circuit Shaoxing Co ltd
Current assignee: Changdian Integrated Circuit Shaoxing Co ltd
Priority date: 2021-12-23
Filing date: 2021-12-23
Publication date: 2022-04-05
Anticipated expiration: 2041-12-23
Also published as: CN114284237B

Abstract

The invention provides a metal wiring layer structure with a power management function and a preparation method thereof, wherein the wiring layer structure comprises: the metal winding layer is arranged between the first signal transmission layer and the second signal transmission layer and used for converting alternating electric signals input by the external power supply chip into working voltage matched with the external working chip; the metal winding layer comprises an annular magnetic core, a winding copper wire group wound on the annular magnetic core and at least one group of induction copper wire group wound on the annular magnetic core, the winding copper wire group is connected with the first signal transmission layer, and the at least one group of induction copper wire group is connected with the second signal transmission layer; the packaging structure solves the problems of long signal transmission path and large voltage loss in the packaging structure in the prior art, reduces the signal transmission path between an external power supply chip and an external working piece, and reduces the dielectric loss.

Description

Metal wiring layer structure with power management function and preparation method thereof

Technical Field

The invention relates to the technical field of circuit packaging, in particular to a metal wiring layer structure with a power management function and a preparation method thereof.

Background

The power management system can generally comprise a power chip and a power modulation circuit, and provides a more stable voltage or current waveform for a working chip, especially for a working chip which needs to be powered by alternating voltage or current, so that the working chip must be matched with the power modulation circuit to realize the integrity of signal output, and the power modulation circuit needs to be connected with more inductors, capacitors and resistors to realize the modulation of the input voltage or current waveform through an analog circuit.

In the current chip packaging process, a chip system with a power management function is generally integrated in a laminated structure of a packaging substrate or a PCB board, or is connected with an external chip with the power management function through solder balls on the packaging substrate and/or the PCB board. However, because the power management system is integrated in the stacked structure of the package substrate or the PCB, the signal transmission path between the power management system and the working chip is long, which may cause a noise problem when alternating voltage or current supplies power to the working chip; furthermore, because the signal transmission path between the power management system and the working chip is long, the dielectric loss caused by the transmission path may cause the loss of the power supply voltage, and at the same time, the power loss of the power supply may be increased, resulting in the problem of insufficient power supply to the working chip.

Therefore, the packaging structure with the power management function in the prior art has the problem of long signal transmission path, so that the loss of the power supply voltage is large, and the power supply to the working chip is influenced.

Disclosure of Invention

Aiming at the defects in the prior art, the metal wiring layer structure with the power management function and the preparation method thereof solve the problems of long signal transmission path and large voltage loss of a packaging structure in the prior art, reduce the signal transmission path between an external power chip and an external working piece and reduce the dielectric loss.

In a first aspect, the present invention provides a metal wiring layer structure with power management function, the wiring layer structure comprising: the first signal transmission layer is connected with the output end of the external power supply chip; the second signal transmission layer is connected with the power supply input end of the external working chip; the metal winding layer is arranged between the first signal transmission layer and the second signal transmission layer and used for converting the alternating electric signals input by the external power supply chip into working voltages matched with the external working chip; the metal winding layer comprises an annular magnetic core, a winding copper wire group wound on the annular magnetic core and at least one group of induction copper wire group wound on the annular magnetic core, the winding copper wire group is connected with the first signal transmission layer, and the at least one group of induction copper wire group is connected with the second signal transmission layer.

In a second aspect, the present invention provides a method for preparing a metal wiring layer structure with a power management function, the method comprising: providing a carrier plate, and preparing a first signal transmission layer on one surface of the carrier plate; preparing a winding copper wire group and at least one group of induction copper wire groups on the first signal transmission layer, and embedding a ring-shaped magnetic core in the winding copper wire group and the at least one group of induction copper wire groups to obtain a metal winding layer; and preparing a second signal transmission layer on the metal winding layer, and stripping the carrier plate to form a metal wiring layer structure with a power management function.

Compared with the prior art, the invention has the following beneficial effects:

1. according to the invention, an external power supply chip is connected with an input of a power supply through a first signal transmission layer, an annular magnetic core is embedded in a metal winding layer, and a copper wire winding and winding group and at least one induction copper wire group are arranged on the annular magnetic core; when the external power supply chip supplies alternating current for the wound copper wire set, alternating magnetic flux is generated in the annular magnetic core, and the induction copper wire set induces matched alternating working voltage to enable the alternating working voltage to provide electric energy for the corresponding external working chip through the second signal transmission layer, so that the signal transmission paths of the external power supply chip and the external working piece are reduced, and the dielectric loss is reduced.

2. The invention can adjust the shape and size of the section of the copper wire in the copper wire winding group according to the actual situation to adjust the current bearing capacity of the copper wire; the induction voltage can be adjusted by adjusting the number of winding turns of the induction copper wire, so that the specific working voltage range of the working chip can be modulated.

3. According to the invention, the plurality of groups of induction copper wire groups are arranged on the annular magnetic core, so that one external power supply chip can provide different working voltages for a plurality of external working chips at the same time.

Drawings

Fig. 1 is a schematic longitudinal structural diagram of a metal wiring layer structure with a power management function according to an embodiment of the present invention;

fig. 2 is a schematic top view of a metal wiring layer structure with a power management function according to an embodiment of the present invention;

fig. 3 is a schematic top view of another metal wiring layer structure with power management function according to an embodiment of the present invention;

fig. 4 is a schematic top view illustrating a metal wiring layer structure with a power management function according to another embodiment of the present invention;

fig. 5 is a schematic flow chart illustrating a method for manufacturing a metal wiring layer structure with a power management function according to an embodiment of the present invention;

fig. 6 is a schematic structural diagram of a first metal wiring layer according to an embodiment of the present invention;

fig. 7 is a schematic structural diagram of a first formation and a first connecting copper pillar according to an embodiment of the present invention;

FIG. 8 is a schematic structural diagram of a first wiring copper layer and a first sensing wiring copper layer according to an embodiment of the present invention;

fig. 9 is a schematic structural diagram of a second wiring copper layer and a second sensing wiring copper layer according to an embodiment of the invention;

fig. 10 is a schematic structural diagram of a third wiring copper layer and a third sensing wiring copper layer according to an embodiment of the present invention;

fig. 11 is a schematic structural diagram of an embedded toroidal core according to an embodiment of the present invention;

fig. 12 is a schematic structural diagram of a fourth wiring copper layer and a fourth sensing wiring copper layer according to an embodiment of the invention;

fig. 13 is a schematic structural diagram of a fifth layer wiring copper layer and a fifth layer sensing wiring copper layer according to an embodiment of the present invention;

fig. 14 is a schematic structural diagram of a sixth wiring copper layer and a sixth sensing wiring copper layer according to an embodiment of the invention;

fig. 15 is a schematic structural diagram of a four-sided copper pillar sidewall according to an embodiment of the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

In a first aspect, the present invention provides a metal wiring layer structure with a power management function, which specifically includes the following embodiments:

example one

Fig. 1 is a schematic longitudinal structural diagram of a metal wiring layer structure with a power management function according to an embodiment of the present invention; as shown in fig. 1, the metal wiring layer structure with power management function includes:

the first signal transmission layer 1 is connected with the output end of an external power supply chip when in use;

the second signal transmission layer 2 is connected with a power supply input end of an external working chip when in use;

the metal winding layer is arranged between the first signal transmission layer 1 and the second signal transmission layer 2 and is used for converting an alternating electric signal input by the external power supply chip into working voltage matched with the working chip;

the metal winding layer comprises an annular magnetic core, a winding copper wire group wound on the annular magnetic core and at least one group of induction copper wire group wound on the annular magnetic core, the winding copper wire group is connected with the first signal transmission layer, and the at least one group of induction copper wire group is connected with the second signal transmission layer.

It should be noted that, in this embodiment, the external power chip is connected to the input of the power through the first signal transmission layer, the annular magnetic core is embedded in the metal winding layer, and the wound copper wire group wound copper wire and at least one group of induction copper wire group are disposed on the annular magnetic core; when the external power supply chip supplies alternating current for the wound copper wire set, alternating magnetic flux is generated in the annular magnetic core, and the induction copper wire set induces to generate matched alternating working voltage, so that the alternating working voltage passes through the second signal transmission layer to provide electric energy for the corresponding external working chip, thereby reducing the signal transmission path of the external power supply chip and the external working sheet, reducing the dielectric loss and the power loss caused by the dielectric loss, and simultaneously reducing the joule heat generated by transmission line impedance.

Furthermore, the shape and the size of the section of the wound copper wire in the wound copper wire group can be adjusted according to actual conditions to adjust the current carrying capacity of the copper wire; the size of the induced electromotive force can be adjusted by adjusting the number of winding turns of the induced copper wire, so that the specific working voltage range of the working chip can be modulated.

Furthermore, a plurality of groups of induction copper wire groups are arranged on the annular magnetic core, so that one external power supply chip can provide different working voltages for a plurality of external working chips at the same time.

In this embodiment, the first signal transmission layer includes: the first metal wiring layer comprises a first conductive column array and a first insulating layer wrapping the first conductive column array, and the wound copper wire group is connected with the output end of the external power supply chip through the first conductive column array and the first ground layer;

the second signal transmission layer includes: the second metal wiring layer comprises a second conductive column array and a second insulating layer wrapping the second conductive column array, and the at least one group of induction copper wire groups are connected with the power supply input end of the external working chip through the second conductive column array.

It should be noted that, as shown in fig. 1, the first metal wiring layer 11 is composed of a first conductive pillar array 11a and a first insulating layer 11b, and a soldering port for connecting the package substrate or the PCB is arranged on the first conductive pillar array 11 a; the second metal wiring layer 17 is composed of a second conductive pillar array 17a and a second insulating layer 17b, and I/O ports for connecting the working chips are arranged on the second conductive pillar array 17 a. The density and the size of the welding ports arranged on the first conductive column array 11a are both smaller than those arranged on the second conductive column array 17 a; the chip connection ports are arranged on the second conductive pillar array 17a corresponding to the second metal wiring layer 17, and the ac power port and the dc power port may be arranged on the second conductive pillar array 17a corresponding to the second metal wiring layer 17 or the first conductive pillar array 11a corresponding to the first metal wiring layer 11 according to actual application requirements.

In this embodiment, the wound copper wire group includes a plurality of wound copper coils having 2n metal wiring layers, or/and each group of induced copper wire group includes a plurality of induced copper coils having 2m metal wiring layers; wherein n is more than or equal to 1 and is a natural number, and m is more than or equal to 1 and is a natural number.

The wound copper wire group consists of a plurality of wound copper coils wound on the annular magnetic core, each wound copper coil comprises 2n layers of metal wiring layers, so that n layers of metal wiring layers are arranged right below the annular magnetic core and n layers of metal wiring layers are arranged right above the annular magnetic core, and the n layers of metal wiring layers right below the annular magnetic core and the n layers of metal wiring layers right above the annular magnetic core are connected with each other through copper blind holes, so that a serial wound structure is formed on the annular magnetic core; similarly, each group of induction copper wire group consists of a plurality of induction copper coils wound on the annular magnetic core, each induction copper coil comprises 2m layers of metal wiring layers, so that m layers of metal wiring layers are arranged under the annular magnetic core and m layers of metal wiring layers are arranged above the annular magnetic core, and the m layers of metal wiring layers under the annular magnetic core and the m layers of metal wiring layers above the annular magnetic core are connected with each other through induction copper blind holes, so that a series-wound structure is formed on the annular magnetic core; wherein n and m may be the same or different.

In this embodiment, the wiring layer structure further includes: the first copper column side wall 16a, the second copper column side wall 16b, the third copper column side wall 16c and the fourth copper column side wall 16d are arranged on the periphery of the metal winding layer, so that the first section of the first copper column side wall 16a, the first section of the second copper column side wall 16b, the first section of the third copper column side wall 16c and the first section of the fourth copper column side wall 16d are connected with the first ground layer, and the second section of the first copper column side wall 16a, the second section of the second copper column side wall 16b, the second section of the third copper column side wall 16c and the second section of the fourth copper column side wall 16d are connected with the second ground layer.

It should be noted that the metal winding layer for embedding the annular magnetic core 10 is located between the second ground layer 15 and the first ground layer 12 in the Z direction, and 4 copper pillar sidewalls are arranged on the periphery of the metal winding layer on the X-Y plane, the 4 copper pillar sidewalls surround the annular magnetic core 10 on the X-Y plane, and the 4 copper pillar sidewalls arranged on the periphery of the annular magnetic core 10 are composed of a first copper pillar sidewall 16a, a second copper pillar sidewall 16b, a third copper pillar sidewall 16c, and a fourth copper pillar sidewall 16 d. An electromagnetic shielding space is established among the second stratum 15, the first stratum 12 and the 4 copper cylinder side walls, so that crosstalk of external electromagnetic waves to the working chip in the signal transmission process can be better shielded.

In this embodiment, the wound copper coil with 2n metal wiring layers includes: 2n wiring copper layers; a first connecting copper pillar V1 disposed at a first end of the first wiring copper layer for connecting the first wiring copper layer and the first ground layer; the second connecting copper column is arranged at the first tail end of the (n + 1) th wiring copper layer and used for connecting the (n + 1) th wiring copper layer and the first conductive column array; and 2n-1 copper blind holes for interconnecting each wiring copper layer;

the first end of the nth layer of wiring copper layer is one end far away from the induction copper wire group, the second end of the nth layer of wiring copper layer is one end close to the induction copper wire group, and the width of the nth layer of wiring copper layer in the X direction is smaller than that of the (n + 1) th layer of wiring copper layer in the X direction.

Optionally, when n is 3, the wound copper coil with 2n metal wiring layers includes: the first copper blind hole is used for connecting the fourth layer wiring copper layer and the third layer wiring copper layer; the second copper blind hole is used for connecting the fifth layer wiring copper layer and the second layer wiring copper layer; the third copper blind hole is used for connecting the fifth layer wiring copper layer and the third layer wiring copper layer; the fourth copper blind hole is used for connecting the sixth wiring copper layer and the first wiring copper layer; and the fifth copper blind hole is used for connecting the sixth wiring copper layer and the second wiring copper layer.

It should be noted that fig. 1 shows that 3 layers of copper wires are prepared on the toroidal core 10a, n layers of copper wires can be prepared according to the requirement of actual magnetic field induction, the left side of fig. 1 corresponds to the first winding end 10a of the toroidal core, and the wiring metal for current transmission is prepared on the first winding end 10a, and the wiring metal includes the electroplated copper wire on the X-Y plane and the connecting copper pillar in the Z direction.

The electroplated copper wire on the X-Y plane comprises a first wiring copper layer 101, a second wiring copper layer 102, a third wiring copper layer 103, a fourth wiring copper layer 104, a fifth wiring copper layer 105 and a sixth wiring copper layer 106; the conductive holes in the Z direction comprise a first copper blind hole V4-3, a second copper blind hole V5-2, a third copper blind hole V5-3, a fourth copper blind hole V6-1 and a fifth copper blind hole V6-2.

The first copper blind hole V4-3 is used for realizing the conductive interconnection of the fourth wiring copper layer 104 and the third wiring copper layer 103 on the X-Y plane in the Z direction; the second copper blind via V5-2 is used to realize conductive interconnection of the fifth wiring copper layer 105 and the second wiring copper layer 102 in the Z direction on the X-Y plane; the third copper blind via V5-3 is used for realizing the conductive interconnection of the fifth wiring copper layer 105 and the third wiring copper layer 103 in the Z direction on the X-Y plane, the fourth copper blind via V6-1 is used for realizing the conductive interconnection of the sixth wiring copper layer 106 and the first wiring copper layer 101 in the Z direction on the X-Y plane, and the fifth copper blind via V6-2 is used for realizing the conductive interconnection of the sixth wiring copper layer 106 and the second wiring copper layer 102 in the Z direction on the X-Y plane.

The first port 301 of the alternating current power supply is connected with the first layer of wiring copper layer 101 through a first connecting copper pillar V1 in the Z direction, wherein the first connecting copper pillar V1 is connected with the first ground layer 12, and is connected with the package substrate or the PCB board through a first conductive pillar array 11a arranged on the first metal wiring layer 11; similarly, the second port 302 of the ac power supply is connected to the fourth layer of wiring copper layer 104 through a second connecting copper pillar V2 in the Z direction, wherein the second connecting copper pillar V2 is connected to the package substrate or the PCB board through the first conductive pillar array 11a disposed on the first metal wiring layer 11.

When an external ac power source inputs current through the first port 301 of the ac power source, the input current respectively passes through: the AC power supply second port 302, the fourth wiring copper layer 104, the first copper blind hole V4-3, the third wiring copper layer 103, the third copper blind hole V5-3, the fifth wiring copper layer 105, the second copper blind hole V5-2, the second wiring copper layer 102, the fifth copper blind hole V6-2, the sixth wiring copper layer 106, the fourth copper blind hole V6-1, the first wiring copper layer 101, the AC power supply first port 301 (ground port) realize the transmission of input current, the wiring copper layer and the copper blind holes are wound on the first winding end 10a of the annular magnetic core and generate induced magnetic lines 10 ', and the magnetic lines 10' are transmitted along the running direction of the annular magnetic core 10; the magnetic force line 10' generates induced electromotive force through the wiring copper layer and the copper blind hole wound on the second winding end 10c of the annular magnetic core, and here, the size and the layout of the wound wiring copper layer and the size and the layout of the copper blind hole can be selected according to the requirements of the functions of the actual connected chip.

In this embodiment, the induction copper coil having 2m metal wiring layers includes: 2m layers of induction wiring copper layers; the first signal copper pillar P1 is arranged at the first tail end of the first layer of induction wiring copper layer and is used for connecting the first layer of induction wiring copper layer and the second conductive pillar array; a third connecting copper pillar G3 disposed at a first end of the first layer of the inductive wiring copper layer for connecting the first layer of the inductive wiring copper layer and the first ground layer; the second signal copper pillar P2 is arranged at the first tail end of the (m + 1) th induction wiring copper layer and is used for connecting the (m + 1) th induction wiring copper layer and the second conductive pillar array; and 2m-1 copper blind holes for interconnecting each layer of inductive wiring copper layers; the first end of the mth layer of induction wiring copper layer is one end far away from the winding copper wire group, the second end of the mth layer of induction wiring copper layer is one end close to the winding copper wire group, and the width of the mth layer of induction wiring copper layer in the X direction is smaller than that of the m +1 th layer of induction wiring copper layer in the X direction.

Optionally, when m is 3, the induction copper coil having 2m metal wiring layers includes: the first induction copper blind hole is used for connecting the fourth layer of induction wiring copper layer and the third layer of induction wiring copper layer; the second induction copper blind hole is used for connecting the fifth layer induction wiring copper layer and the second layer induction wiring copper layer; the third induction copper blind hole is used for connecting the fifth layer induction wiring copper layer and the third layer induction wiring copper layer; the fourth induction copper blind hole is used for connecting the sixth induction wiring copper layer and the first induction wiring copper layer; and the fifth induction copper blind hole is used for connecting the sixth induction wiring copper layer and the second induction wiring copper layer.

It should be noted that the copper-plated wire wound around the second winding end 10c of the annular magnetic core 10 and along the X-Y plane includes: a first induction wiring layer 201, a second induction wiring layer 202, a third induction wiring layer 203, a fourth induction wiring layer 204, a fifth induction wiring layer 205 and a sixth induction wiring layer 206; the conductive holes in the Z direction comprise a first induction copper blind hole G4-3, a second induction copper blind hole G5-2, a third induction copper blind hole G5-3, a fourth induction copper blind hole G6-1 and a fifth induction copper blind hole G6-2;

the first inductive copper blind hole G4-3 is used for realizing the conductive interconnection of the fourth inductive wiring copper layer 204 and the third inductive wiring copper layer 203 on the X-Y plane in the Z direction; the second sensing copper blind hole G5-2 is used for realizing the conductive interconnection of the fifth sensing wiring copper layer 205 and the second sensing wiring copper layer 202 on the X-Y plane in the Z direction; the third induction copper blind hole G5-3 is used for realizing the conductive interconnection of the fifth layer induction wiring copper layer 205 and the third layer induction wiring copper layer 203 on the X-Y plane in the Z direction; the fourth inductive copper via G6-1 is used for realizing the conductive interconnection of the sixth inductive wiring copper layer 206 and the first inductive wiring copper layer 201 on the X-Y plane in the Z direction; the fifth inductive copper via G6-2 is used to electrically interconnect the sixth inductive wiring copper layer 206 and the second inductive wiring copper layer 202 in the Z-direction in the X-Y plane.

As shown in fig. 2, in this embodiment, the wiring layer structure further includes: the inductor comprises a resistor R1, a first inductor L1, a second inductor L2, a first capacitor C1 and a second capacitor C2; a first end of the resistor R1 is connected with a first end of the fourth layer of sensing wiring copper layer, and a second end of the resistor R1 is connected with a first end of the first layer of sensing wiring copper layer; a first terminal of the first inductor L1 is connected to a first terminal of the fourth layer of inductive copper wiring layer, a second terminal of the first inductor L1 is connected to a first terminal of the second inductor L2, and a second terminal of the second inductor L2 is connected to a first terminal of the first layer of inductive copper wiring layer; a first terminal of the first capacitor C1 is connected to the second terminal of the first inductor L1, a second terminal of the first capacitor C1 is connected to the second ground layer, a first terminal of the second capacitor C2 is connected to the second terminal of the second inductor L2, and a first terminal of the second capacitor C2 is connected to the first ground layer.

In this embodiment, the wiring layer structure further includes: the first conductive copper column is arranged at the first end of the first layer of induction wiring copper layer and is used for connecting the first layer of induction wiring copper layer and the conductive column on the first metal wiring layer; and the second conductive copper column is arranged at the first end of the fourth layer of induction wiring copper layer and is used for connecting the fourth layer of induction wiring copper layer and the conductive column on the first metal wiring layer.

It should be noted that the fourth layer of sensing wiring copper layer 204 is connected to the first output port 303 through the second signal copper pillar P2, the first layer of sensing wiring copper layer 201 is connected to the second output port 304 through the first signal copper pillar P1, and a resistor R1 is connected in parallel between the third layer of sensing wiring copper layer 203 and any copper pillar node 21 of the first output port 303, and any copper pillar node 22 of the first layer of sensing wiring copper layer 201; similarly, 2 inductors are connected in parallel between the fourth layer of inductive wiring copper layer 204 and any copper pillar node 23 of the first output port 303, and any copper pillar node 24 of the first layer of inductive wiring copper layer 201, and the first inductor L1 and the second inductor L2 are connected in series; wherein, a node 25 is arranged between the node 23 and the first inductor L1, a node 26 is arranged between the node 24 and the second inductor L2, the node 25 and the node 26 are respectively connected with the first conductive pillar array 11a on the first metal wiring layer 11 through the first conductive copper pillar and the second conductive copper pillar in the Z direction, so as to introduce the voltage output by the dc power supply to adjust the working voltage amplitude of the working chip.

In addition, a node 27 is arranged between the first inductor L1 and the second inductor L2 and is used for connecting a first capacitor C1, the other end of the first capacitor C1 is directly connected with the first ground layer 12 or the second ground layer 15 through a copper pillar, a node 28 is arranged between the second inductor L2 and the node 26 and is used for connecting a second capacitor C2, and the other end of the second capacitor C2 is directly connected with the first ground layer 12 or the second ground layer 15 through a copper pillar; the first ground layer 12 and the second ground layer 15 are both fully coated with an entire copper electroplating layer, so as to shield electromagnetic interference, reduce electromagnetic interference on output signals, improve the integrity and stability of output signal waveforms, and reduce distortion of the output signals.

The node 29 arranged on the fourth layer of induction wiring copper layer 204 is connected with the second conductive pillar array 17a on the second layer of metal wiring layer 17 through a copper pillar, and serves as a first signal output port 303; the node 30 arranged on the first layer of inductive wiring copper layer 201 is connected with the second conductive pillar array 17a on the second layer of metal wiring layer 17 through the copper pillar, and serves as a second signal output port 304, and the first output port 303 and the second output port 304 are used for connecting signal I/O pins of the chip. And a plurality of signal access ports can be arranged according to the signal I/O pin layout of the chips with different functions.

Example two

Fig. 3 is a schematic top view of another metal wiring layer structure with a power management function according to an embodiment of the present invention, and as shown in fig. 3, the embodiment includes 2 groups of inductive copper wire groups, winding directions of copper wires of the 2 groups of inductive copper wire groups on the second winding end 10c of the toroidal core are opposite, and the copper wires of the 2 groups of inductive copper wire groups respectively generate induced electromotive forces with equal values and opposite amplitudes for supplying power to the analog chip.

The copper wire leading-out ends from the first output port 303 to the fourth layer of induction wiring copper layer 204 form a first transmission copper wire 701, and the copper wire leading-out ends from the second output port 304 to the first layer of induction wiring copper layer 201 form a second transmission copper wire 702; a connecting end point of a second resistor R2 is arranged on the first transmission copper wire 701, a third resistor R3 is connected with a second resistor R2 in series, a part of access end points of an external direct current power supply 309 can be arranged on the transmission copper wire between the second resistor R2 and the third resistor R3, the other part of access end points of the direct current power supply 309 can be arranged at the copper wire connecting point series connection point 31 of the 2 groups of induction copper wires, and the access of the direct current power supply 309 aims at adjusting the working voltage amplitude of the working chip so as to meet the working voltage amplitude range of various working chips;

an access port of an LC filter circuit is arranged on a first transmission copper wire 701, another access port of the LC filter circuit is arranged on a second transmission copper wire 702, and the access purpose of the LC filter circuit is to filter and regulate alternating induced electromotive force generated by high-frequency changing magnetic flux so as to meet the requirement of a working chip on the stability of a power supply voltage waveform and the harsh requirement of the working chip on the stability of the working voltage waveform. In the LC filter circuit, the third inductor L3 is connected in series with the fourth inductor L4, the third capacitor C3 and the fourth capacitor C4 are connected in parallel to filter and regulate the high-frequency induced current, and the other ends of the third capacitor and the fourth capacitor are used for grounding, that is, the third capacitor and the fourth capacitor are connected to the first ground layer 12 or the second ground layer 15 through the plated copper pillar.

The ends of the first transmission copper line 701 and the second transmission copper line 702 may be provided for connecting the first output port 303 and the second output port 304 of the working chip. Wherein, 2 groups of induction copper wire groups can be designed according to the voltage range of a specific working chip, and the induction copper wire groups comprise: inducing, in each wiring layer, a wiring density of a wiring copper layer and a thickness and a width of a copper line formed by electroplating on an X-Y plane; in the Z direction, the hole shape of the induction copper blind holes for realizing the electrical connection between different induction wiring copper layers and the distribution density degree of the induction copper blind holes are consistent, but the cross section shapes of the winding copper wires in the Z direction are consistent between the wiring copper layers and the induction copper blind holes, so that the problems of impedance change caused by the inconsistent cross section sizes of the copper wires and signal reflection caused by the transmission of signals on transmission lines with impedance change are reduced.

EXAMPLE III

Fig. 4 is a schematic top view of another metal wiring layer structure with power management function according to an embodiment of the present invention, as shown in fig. 4, a plurality of groups of inductive copper wire groups are prepared on a ring core 10 in this embodiment, and are used for providing a plurality of working chips with required working voltages; the induced electromotive force generated by the magnetic force lines can provide working voltage for the working chip by arranging an LC filter circuit element or combining the LC filter circuit element with an external direct current power supply 309, the amplitude of the working voltage required by the working chip can be adjusted by accessing the direct current power supply 309, the voltage waveform required by the working chip can be adjusted by the LC filter circuit, and particularly when the working voltage is provided for the radio frequency working chip, the LC filter circuit is required to be accessed to reduce interference. Fig. 4 shows only one design scheme of multiple groups of induction wiring copper layers, and on the basis of understanding the working principles of the first embodiment and the second embodiment, the structures of the multiple groups of induction wiring copper layers can be flexibly designed to supply power to different working chips.

In a second aspect, the present invention provides a method for manufacturing a metal wiring layer structure with a power management function, which specifically includes the following embodiments:

example four

Fig. 5 is a schematic flow chart illustrating a method for manufacturing a metal wiring layer structure with a power management function according to an embodiment of the present invention; as shown in fig. 5, the method for manufacturing the metal wiring layer structure with the power management function specifically includes the following steps:

step S101, a carrier plate is provided, and a first signal transmission layer is prepared on one surface of the carrier plate.

Step S102, preparing a winding copper wire group and at least one group of induction copper wire groups on the first signal transmission layer, and embedding a ring-shaped magnetic core in the winding copper wire group and the at least one group of induction copper wire groups to obtain a metal winding layer.

Step S103, preparing a second signal transmission layer on the metal winding layer, and forming a metal wiring layer structure with a power management function after peeling off the carrier.

In this embodiment, preparing a first signal transmission layer on one side of the carrier includes: a stripping layer is adhered to one surface of the carrier plate; coating photoresist on the stripping layer, and preparing a first metal wiring layer through a photoetching process and an electroplating process, wherein the first metal wiring layer comprises a first conductive pillar array and a first insulating layer coating the first conductive pillar array; and electroplating a metal layer on the first metal wiring layer to form a first ground layer, so that the first metal wiring layer and the first ground layer form the first signal transmission layer.

Optionally, the wound copper wire group comprises a plurality of wound copper coils with 2n metal wiring layers, and each induced copper wire group comprises a plurality of induced copper coils with 2m metal wiring layers; wherein n is more than or equal to 1 and is a natural number, and m is more than or equal to 1 and is a natural number.

Optionally, preparing a wound copper wire group and at least one induction copper wire group on the first signal transmission layer, and embedding a ring-shaped magnetic core in the wound copper wire group and the at least one induction copper wire group to obtain a metal winding layer, including: sequentially manufacturing n metal wiring layers of each wound copper coil and m metal wiring layers of each induction copper coil on the first signal transmission layer; embedding an annular magnetic core in the dielectric layer on the n layers of metal wiring layers of each wound copper coil and the m layers of metal wiring layers of each induction copper coil; and then preparing n layers of metal wiring layers of each wound copper coil and m layers of metal wiring layers of each induction copper coil on the annular magnetic core to form the metal winding layers.

Optionally, when n-m-3, sequentially fabricating n metal wiring layers of each wound copper coil and m metal wiring layers of each induced copper coil on the first signal transmission layer, includes: coating photoresist on the first stratum, and preparing a first connecting copper column, a third connecting copper column and a first dielectric layer on the photoresist film through a photoetching process and an electrolytic copper process; preparing a first wiring copper layer, a first induction wiring copper layer and a second dielectric layer on the first dielectric layer, connecting the first end of the first wiring copper layer with the first ground layer through the first connecting copper pillar, connecting the first end of the first induction wiring copper layer with the first ground layer through the third connecting copper pillar, and coating the first wiring copper layer and the first induction wiring copper layer with the second dielectric layer; preparing a third dielectric layer on the first wiring copper layer, the first induction wiring copper layer and the second dielectric layer, and preparing a fourth dielectric layer, a second wiring copper layer and a second induction wiring copper layer on the third dielectric layer; and preparing a fifth dielectric layer on the second wiring copper layer, the second induction wiring copper layer and the fourth dielectric layer, and preparing a sixth dielectric layer, a third wiring copper layer and a third induction wiring copper layer on the fifth dielectric layer.

Optionally, the embedding of the annular magnetic core in the dielectric layer on the n layers of metal wiring layers of each wound copper coil and the m layers of metal wiring layers of each induced copper coil includes: and preparing a seventh dielectric layer on the third layer of wiring copper layer, the third layer of induction wiring copper layer and the sixth dielectric layer, preparing an annular groove on the seventh dielectric layer, and embedding a magnetic core in the annular groove.

Optionally, n metal wiring layers of each wound copper coil and m metal wiring layers of each induced copper coil are further prepared on the annular magnetic core to form the metal winding layer, including: preparing an eighth dielectric layer on the seventh dielectric layer, and preparing a fourth wiring copper layer, a fourth induction wiring copper layer and a ninth dielectric layer on the eighth dielectric layer; preparing a first copper blind hole at the second end of the fourth wiring copper layer and a second connecting copper column at the first end of the fourth wiring copper layer, so that the fourth wiring copper layer is connected with the third wiring copper layer through the first copper blind hole, and the fourth wiring copper layer is connected with the conductive column in the first metal wiring layer through the second connecting copper column; preparing a tenth dielectric layer on the ninth dielectric layer, and preparing a fifth wiring copper layer, a fifth induction wiring copper layer and an eleventh dielectric layer on the tenth dielectric layer; preparing a second copper blind hole at the second end of the fifth layer wiring copper layer and a third copper blind hole at the first end of the fifth layer wiring copper layer, so that the fifth layer wiring copper layer is connected with the second layer wiring copper layer through the second copper blind hole and is connected with the third layer wiring copper layer through the third copper blind hole; preparing a second induction copper blind hole at the second end of the fifth layer induction wiring copper layer and a third induction copper blind hole at the first end of the fifth layer induction wiring copper layer, so that the fifth layer induction wiring copper layer is connected with the second layer induction wiring copper layer through the second induction copper blind hole, and the fifth layer induction wiring copper layer is connected with the third layer induction wiring copper layer through the third induction copper blind hole; preparing a twelfth dielectric layer on the fifth wiring copper layer, the fifth induction wiring copper layer and the eleventh dielectric layer, and preparing a sixth wiring copper layer, a sixth induction wiring copper layer and a thirteenth dielectric layer on the twelfth dielectric layer; preparing a fourth copper blind hole at the second end of the sixth wiring copper layer and a fifth copper blind hole at the second end of the sixth wiring copper layer, so that the sixth wiring copper layer is connected with the first wiring copper layer through the fourth copper blind hole and the sixth wiring copper layer is connected with the second wiring copper layer through the fifth copper blind hole; preparing a fourth induction copper blind hole at the second end of the sixth induction wiring copper layer and a fifth induction copper blind hole at the first end of the sixth induction wiring copper layer, so that the sixth induction wiring copper layer is connected with the first induction wiring copper layer through the fourth induction copper blind hole, and the sixth induction wiring copper layer is connected with the second induction wiring copper layer through the fifth induction copper blind hole; and preparing a fourteenth dielectric layer on the fifth wiring layer, the sixth induction wiring layer and the thirteenth dielectric layer.

Optionally, preparing a second signal transmission layer on the metal winding layer, and stripping the carrier to form a metal wiring layer structure with a power management function, including: electroplating a metal layer on the fourteenth dielectric layer to form a second ground layer; coating photoresist on the second ground layer, and preparing a second metal wiring layer through a photoetching process and an electroplating process, wherein the second metal wiring layer comprises a second conductive pillar array and a second insulating layer covering the second conductive pillar array; manufacturing a first signal copper pillar P1 and a second signal copper pillar P2 on the second metal wiring layer, so that the first tail end of the first layer of induction wiring layer is connected with the second conductive pillar array through the first signal copper pillar P1, and the first tail end of the fourth layer of induction wiring layer is connected with the second conductive pillar array through the second signal copper pillar; and stripping the carrier plate to obtain the multilayer metal wiring layer structure with the power management function.

Optionally, before plating the metal layer on the fourteenth dielectric layer to form the second ground layer, the method further comprises: through holes are formed in the periphery of the fourteenth dielectric layer, and a first copper pillar side wall 16a, a second copper pillar side wall 16b, a third copper pillar side wall 16c and a fourth copper pillar side wall 16d are obtained through an electroplating process, so that the first section of the first copper pillar side wall 16a, the first section of the second copper pillar side wall 16b, the first section of the third copper pillar side wall 16c and the first section of the fourth copper pillar side wall 16d are connected with the first ground layer.

Optionally, before the tenth dielectric layer is prepared on the ninth dielectric layer, the method further includes: embedding a resistor, a first inductor, a second inductor, a first capacitor and a second capacitor on the ninth dielectric layer, so that a first end of the resistor is connected with a first tail end of the fourth layer of induction wiring copper layer, and a second end of the resistor is connected with a first end of the first layer of induction wiring copper layer; connecting a first end of the first inductor with a first end of the fourth layer of induction wiring copper layer, connecting a second end of the first inductor with a first end of the second inductor, and connecting a second end of the second inductor with a first end of the first layer of induction wiring copper layer; and connecting the first end of the first capacitor with the second end of the first inductor, connecting the second end of the first capacitor with the second ground layer, connecting the first end of the second capacitor with the second end of the second inductor, and connecting the first end of the second capacitor with the first ground layer.

It should be noted that the method for manufacturing the metal wiring layer structure with the power management function provided in this embodiment specifically includes the following steps:

step S1, adhering a peeling layer 02 on a carrier 01, coating a photoresist on the peeling layer 02, and performing a photolithography process and an electroplating process to obtain a first conductive pillar array 11a and a first insulating layer 11b covering the first conductive pillar array 11 a; as shown in fig. 6, the first conductive pillar array 11a and the first insulating layer 11b constitute a first metal wiring layer 11.

Preferably, the first conductive pillar array 11a is a plated copper pillar, and the first insulating layer 11b is a polyimide material.

Further, a metal layer is plated on the first metal wiring layer 11 to form a first ground layer 12, as shown in fig. 7; preferably, the first ground layer 12 is formed by an electroplating process to form a copper layer; the first ground layer 12 serves as a ground layer for grounding processing of signals to shield electromagnetic interference from the outside and mutual interference between signals.

Step S2: coating photoresist on the first ground layer 12, and preparing a first connecting copper pillar V1 on the photoresist film through a photoetching process and an electrolytic copper process; as shown in fig. 7, the photoresist film is baked and cured to obtain the first dielectric layer 14-1, and the first connecting cu pillar V1 is used for the ground connection between the first wiring cu layer 101 and the first ground layer 12.

Step S3: spin-coating photoresist, and preparing a second dielectric layer 14-2 by a photoetching process, wherein the second dielectric layer 14-2 is coated: a first wiring copper layer 101 and a first induction wiring copper layer 201, as shown in fig. 8.

Step S4: a photoresist is coated in a spinning mode to prepare a third dielectric layer 14-3, a photoresist is coated in a spinning mode to prepare a fourth dielectric layer 14-4 on the third dielectric layer 14-3, and a second wiring copper layer 102 and a second induction wiring copper layer 202 are prepared through a photoetching process and a copper electroplating process, as shown in fig. 9.

Step S5: in the same process step S4, a fifth dielectric layer 14-5 and a sixth dielectric layer 14-6 are prepared, and a third wiring copper layer 103 and a third sensing wiring copper layer 203 are prepared by a photolithography process and an electrolytic copper plating process, as shown in fig. 10.

Step S6: spin-coating photoresist to obtain a seventh dielectric layer 14-7; and a photolithographic mask is prepared according to the shape and size of the magnetic core 10, and a groove for embedding the magnetic core 10 is prepared on the seventh dielectric layer 14-7 through a photolithographic process, as shown in fig. 11.

Step S7: spin-coating photoresist to obtain an eighth dielectric layer 14-8; and preparing a fourth wiring copper layer 104, a fourth induction wiring copper layer 204 and a ninth dielectric layer 14-9 on the eighth dielectric layer 14-8 through a photoetching process and a copper electroplating process.

As shown in fig. 12, a first copper blind hole V4-3 is prepared at the end of the fourth wiring copper layer 104 for electrically connecting the fourth wiring copper layer 104 and the third wiring copper layer 103 in the longitudinal direction, so as to achieve a closed connection of copper wires, thereby providing a closed wound coil for the formation of magnetic lines of force; a second connecting copper pillar V2 is prepared at the other end of the fourth wiring copper layer 104, and the second connecting copper pillar V2 penetrates through the first dielectric layer 14-1 to the ninth dielectric layer 14-9 and the first ground layer 12, respectively, and is connected to the first conductive pillar array 11a on the first metal wiring layer 11, so as to serve as a conduction path for the second port 302 of the ac power supply to guide the input current of the external power supply.

Similarly, a first induction copper blind hole G4-3 is prepared at the end of the fourth layer of induction wiring copper layer 204 and is used for realizing the conductive connection of the fourth layer of induction wiring copper layer 204 and the third layer of induction wiring copper layer 203 in the longitudinal direction, so as to realize the closed connection of copper wires, thereby providing a closed wound coil for the formation of induction magnetic lines; at the other end of the fourth inductive wiring copper layer 204, a first inductive copper pillar L1 in the longitudinal direction is formed, which is conductively connected to the first ground layer 12 through the first to ninth dielectric layers 14-1 to 14-9, respectively.

Preferably, as shown with reference to fig. 1 and 2, a resistor, a first inductor, a second inductor, a first capacitor and a second capacitor are embedded on the ninth dielectric layer 14-9.

Step S8: spin-coating photoresist to obtain a tenth dielectric layer 14-10; and preparing a fifth wiring copper layer 105, a fifth induction wiring copper layer 205 and an eleventh dielectric layer 14-11 on the tenth dielectric layer 14-10 through a photoetching process and an electrolytic copper plating process.

As shown in fig. 13, a second copper blind via V5-2 is prepared at the end of the fifth wiring copper layer 105 for electrically connecting the fifth wiring copper layer 105 and the second wiring copper layer 102 in the longitudinal direction, so as to achieve a closed connection of copper wires, thereby providing a closed wound coil for the formation of magnetic lines of force; and a third copper blind hole V5-3 is prepared at the other end of the fifth layer wiring copper layer 105 and is used for realizing the conductive connection of the fifth layer wiring copper layer 105 and the third layer wiring copper layer 103 in the longitudinal direction, so that the closed connection of copper wires is realized, and a closed wound coil is provided for the formation of magnetic lines of force.

Similarly, a second induction copper blind hole G5-2 is prepared at the end of the fifth layer induction wiring copper layer 205, and is used for realizing the conductive connection of the fifth layer induction wiring copper layer 205 and the second layer induction wiring copper layer 202 in the longitudinal direction, so as to realize the closed connection of copper wires, thereby providing a closed coil for the formation of induction magnetic lines; and a third induction copper blind hole G5-3 is prepared at the other end of the fifth layer induction wiring copper layer 205 and is used for realizing the conductive connection of the fifth layer induction wiring copper layer 205 and the third layer induction wiring copper layer 205 in the longitudinal direction, so that the closed connection of copper wires is realized, and a closed coil is provided for the formation of induction magnetic lines.

Step S9: spin-coating photoresist to obtain a twelfth dielectric layer 14-12 and a thirteenth dielectric layer 14-13; preparing a sixth wiring copper layer 106 and a sixth induction wiring copper layer 205 on the twelfth dielectric layer 14-12 through a photoetching process and a copper electroplating process;

as shown in fig. 14, a fourth copper blind hole V6-1 is prepared at the end of the sixth wiring copper layer 106, for electrically connecting the sixth wiring copper layer 106 and the first wiring copper layer 101 in the longitudinal direction, so as to achieve a closed connection of copper wires, thereby providing a closed wound coil for the formation of magnetic lines of force; and a fifth copper blind hole V6-2 is formed at the other end of the sixth wiring copper layer 106, and is used for realizing conductive connection between the sixth wiring copper layer 106 and the second wiring copper layer 102 in the longitudinal direction, so as to realize closed connection of copper wires, thereby providing a closed wound coil for forming magnetic lines of force.

Similarly, a fourth inductive copper blind hole G6-1 is prepared at the end of the sixth inductive wiring copper layer 206, and is used for realizing the conductive connection between the sixth inductive wiring copper layer 206 and the first inductive wiring copper layer 201 in the longitudinal direction, so as to realize the closed connection of copper wires, thereby providing a closed coil for the formation of inductive magnetic lines; and a fifth induction copper blind hole G6-2 is formed at the other end of the sixth induction wiring copper layer 206 and is used for realizing the conductive connection between the sixth induction wiring copper layer 206 and the second induction wiring copper layer 202 in the longitudinal direction, so as to realize the closed connection of copper wires, thereby providing a closed coil for the formation of induction magnetic lines.

Step S10: spin-coating photoresist to obtain a fourteenth dielectric layer 14-14; through holes are formed around the fourteenth dielectric layer 14-14, and a first copper pillar sidewall 16a, a second copper pillar sidewall 16b, a third copper pillar sidewall 16c, and a fourth copper pillar sidewall 16d are formed by an electroplating process, as shown in fig. 15.

Step S11: forming a second ground layer 15 by forming a copper layer on the fourteenth dielectric layer 14-14; in the same step S1, a second metal wiring layer is formed on the second ground layer 15; the peeling layer 02 is removed, thereby obtaining a multilayer metal wiring layer structure having a power management function as shown in fig. 1.

The invention provides a metal wiring layer structure with a power management function and a preparation method thereof.A power chip is connected with the input of a power supply through a welding ball on a first metal wiring layer, a magnetic core is embedded in a middle framework of the metal wiring layer, a wound copper wire is electroplated on the magnetic core, alternating current is supplied to the wound copper wire through the power chip, induced magnetic lines generated by the alternating current are utilized to provide required alternating working voltage for a working chip, and waveform modulation of the alternating working voltage is realized through a series of inductance, resistance and capacitance elements, so that more stable alternating working voltage is provided for the working chip, and signal distortion is reduced.

The copper wire wound on the magnetic core is prepared through photoetching and electroplating processes, the shape and the size of the section of the copper wire are related to the current carrying capacity of the copper wire, and the preparation can be realized by adjusting a photoetching mask plate and the electroplating processes; the number of turns of the wound copper wire is related to the magnitude of induced electromotive force generated in the magnetic core, and the induction voltage can be adjusted by adjusting the number of turns of the wound induction copper wire, so that the specific working voltage range of the working chip can be modulated.

Wherein, through increasing the copper line group of coiling on the magnetic core, can realize that a power chip provides operating voltage for a plurality of work chips simultaneously.

The output port of the induction copper wire is connected with a direct current voltage source in parallel for adjusting the amplitude of alternating voltage input by the power supply chip so as to meet the requirement of the amplitude of working voltage of the working chip.

In order to improve the waveform stability and integrity of the alternating voltage or alternating current supplied to the working chip, an LC filter circuit element can be connected in parallel to an output port of the induction copper wire, so that the stability of the output signal of the working chip is improved.

The periphery of the packaging body is provided with copper holes, the top layer of the packaging body is provided with a second ground layer, the bottom layer of the packaging body is provided with a first ground layer, the first ground layer and the second ground layer are both electroplated copper layers which are fully distributed on the whole layer, the signal transmission path of the working chip is maintained in the copper shielding cavity, and interference of external electromagnetic waves on output signals of the working chip is reduced.

It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

Claims

1. A metal wiring layer structure having a power management function, the wiring layer structure comprising:

the first signal transmission layer is connected with the output end of the external power supply chip;

the second signal transmission layer is connected with the power supply input end of the external working chip;

the metal winding layer is arranged between the first signal transmission layer and the second signal transmission layer and used for converting the alternating electric signals input by the external power supply chip into working voltages matched with the external working chip;

2. The metal wiring layer structure with power management function according to claim 1, wherein said first signal transmission layer comprises:

the first metal wiring layer comprises a first conductive column array and a first insulating layer wrapping the first conductive column array, and the wound copper wire group is connected with the output end of the external power supply chip through the first conductive column array and the first ground layer;

the second signal transmission layer includes:

the second metal wiring layer comprises a second conductive column array and a second insulating layer wrapping the second conductive column array, and the at least one group of induction copper wire groups are connected with the power supply input end of the external working chip through the second conductive column array.

3. The structure of metal wiring layer with power management function as claimed in claim 2, wherein said wound copper wire set comprises a plurality of wound copper coils with 2n metal wiring layers, or/and each group of induced copper wire set comprises a plurality of induced copper coils with 2m metal wiring layers;

wherein n is more than or equal to 1 and is a natural number, and m is more than or equal to 1 and is a natural number.

4. The metal routing layer structure with power management functionality of claim 2, wherein said routing layer structure further comprises:

lay in metal winding layer first copper post lateral wall all around, second copper post lateral wall, third copper post lateral wall and fourth copper post lateral wall make the first section of first copper post lateral wall the first section of second copper post lateral wall the first section of third copper post lateral wall with the first section of fourth copper post lateral wall with first stratum is connected, just the second section of first copper post lateral wall the second section of second copper post lateral wall the second section of third copper post lateral wall with the second section of fourth copper post lateral wall with the second stratum is connected.

5. The metal wiring layer structure with power management function according to claim 3, wherein said wound copper coil with 2n metal wiring layers comprises:

2n wiring copper layers;

the first connecting copper column is arranged at the first end of the first layer of wiring copper layer and is used for connecting the first layer of wiring copper layer and the first ground layer;

the second connecting copper column is arranged at the first tail end of the (n + 1) th wiring copper layer and used for connecting the (n + 1) th wiring copper layer and the first conductive column array;

and 2n-1 copper blind holes for interconnecting each wiring copper layer;

6. The metal wiring layer structure with power management function according to claim 5, wherein when n is 3, the wound copper coil with 2n metal wiring layers comprises:

the first copper blind hole is used for connecting the fourth layer wiring copper layer and the third layer wiring copper layer;

the second copper blind hole is used for connecting the fifth layer wiring copper layer and the second layer wiring copper layer;

the third copper blind hole is used for connecting the fifth layer wiring copper layer and the third layer wiring copper layer;

the fourth copper blind hole is used for connecting the sixth wiring copper layer and the first wiring copper layer;

and the fifth copper blind hole is used for connecting the sixth wiring copper layer and the second wiring copper layer.

7. The metal wiring layer structure with power management function according to claim 3, wherein said induction copper coil having 2m layers of metal wiring layers comprises:

2m layers of induction wiring copper layers;

the first signal copper column is arranged at the first tail end of the first layer of induction wiring copper layer and used for connecting the first layer of induction wiring copper layer and the second conductive column array;

the third connecting copper column is arranged at the first tail end of the first layer of induction wiring copper layer and is used for connecting the first layer of induction wiring copper layer and the first ground layer;

the second signal copper column is arranged at the first tail end of the (n + 1) th induction wiring copper layer and used for connecting the (n + 1) th induction wiring copper layer and the second conductive column array;

and 2m-1 copper blind holes for interconnecting each layer of inductive wiring copper layers;

the first end of the mth layer of induction wiring copper layer is one end far away from the winding copper wire group, the second end of the mth layer of induction wiring copper layer is one end close to the winding copper wire group, and the width of the mth layer of induction wiring copper layer in the X direction is smaller than that of the m +1 th layer of induction wiring copper layer in the X direction.

8. The metal wiring layer structure with power management function according to claim 7, wherein when m is 3, said induction copper coil having 2m metal wiring layers comprises:

the first induction copper blind hole is used for connecting the fourth layer of induction wiring copper layer and the third layer of induction wiring copper layer;

the second induction copper blind hole is used for connecting the fifth layer induction wiring copper layer and the second layer induction wiring copper layer;

the third induction copper blind hole is used for connecting the fifth layer induction wiring copper layer and the third layer induction wiring copper layer;

the fourth induction copper blind hole is used for connecting the sixth induction wiring copper layer and the first induction wiring copper layer;

and the fifth induction copper blind hole is used for connecting the sixth induction wiring copper layer and the second induction wiring copper layer.

9. The metal routing layer structure with power management functionality of claim 7, wherein said routing layer structure further comprises:

the circuit comprises a resistor, a first inductor, a second inductor, a first capacitor and a second capacitor;

the first end of the resistor is connected with the first tail end of the fourth layer of induction wiring copper layer, and the second end of the resistor is connected with the first end of the first layer of induction wiring copper layer;

the first end of the first inductor is connected with the first end of the fourth layer of induction wiring copper layer, the second end of the first inductor is connected with the first end of the second inductor, and the second end of the second inductor is connected with the first end of the first layer of induction wiring copper layer;

the first end of the first capacitor is connected with the second end of the first inductor, the second end of the first capacitor is connected with the second ground layer, the first end of the second capacitor is connected with the second end of the second inductor, and the first end of the second capacitor is connected with the first ground layer.

10. A preparation method of a metal wiring layer structure with a power management function is characterized by comprising the following steps:

providing a carrier plate, and preparing a first signal transmission layer on one surface of the carrier plate;

preparing a winding copper wire group and at least one group of induction copper wire groups on the first signal transmission layer, and embedding a ring-shaped magnetic core in the winding copper wire group and the at least one group of induction copper wire groups to obtain a metal winding layer;

and preparing a second signal transmission layer on the metal winding layer, and stripping the carrier plate to form a metal wiring layer structure with a power management function.

11. The method for manufacturing a metal wiring layer structure with power management function as claimed in claim 10, wherein the step of manufacturing a first signal transmission layer on one side of the carrier comprises:

a stripping layer is adhered to one surface of the carrier plate;

coating photoresist on the stripping layer, and preparing a first metal wiring layer through a photoetching process and an electroplating process, wherein the first metal wiring layer comprises a first conductive pillar array and a first insulating layer coating the first conductive pillar array;

and electroplating a metal layer on the first metal wiring layer to form a first ground layer, so that the first metal wiring layer and the first ground layer form the first signal transmission layer.

12. The method of claim 10, wherein the wound copper wire set comprises a plurality of wound copper coils with 2n layers of metal wiring layers, and each induced copper wire set comprises a plurality of induced copper coils with 2m layers of metal wiring layers;

13. The method of claim 12, wherein the step of forming a winding copper wire group and at least one sensing copper wire group on the first signal transmission layer and embedding a ring-shaped magnetic core in the winding copper wire group and the at least one sensing copper wire group to obtain a metal winding layer comprises:

sequentially manufacturing n metal wiring layers of each wound copper coil and m metal wiring layers of each induction copper coil on the first signal transmission layer;

embedding an annular magnetic core in the dielectric layer on the n layers of metal wiring layers of each wound copper coil and the m layers of metal wiring layers of each induction copper coil;

and then preparing n layers of metal wiring layers of each wound copper coil and m layers of metal wiring layers of each induction copper coil on the annular magnetic core to form the metal winding layers.

14. The method for manufacturing a metal wiring layer structure with power management function as claimed in claim 13, wherein when n-m-3, n metal wiring layers of each wound copper coil and m metal wiring layers of each induced copper coil are sequentially formed on the first signal transmission layer, comprising:

coating photoresist on the first stratum, and preparing a first connecting copper column, a third connecting copper column and a first dielectric layer on the photoresist film through a photoetching process and an electrolytic copper process;

preparing a first wiring copper layer, a first induction wiring copper layer and a second dielectric layer on the first dielectric layer, connecting the first end of the first wiring copper layer with the first ground layer through the first connecting copper pillar, connecting the first end of the first induction wiring copper layer with the first ground layer through the third connecting copper pillar, and coating the first wiring copper layer and the first induction wiring copper layer by the second dielectric layer;

preparing a third dielectric layer on the first wiring copper layer, the first induction wiring copper layer and the second dielectric layer, and preparing a fourth dielectric layer, a second wiring copper layer and a second induction wiring copper layer on the third dielectric layer;

and preparing a fifth dielectric layer on the second wiring copper layer, the second induction wiring copper layer and the fourth dielectric layer, and preparing a sixth dielectric layer, a third wiring copper layer and a third induction wiring copper layer on the fifth dielectric layer.

15. The method of claim 14, wherein embedding a toroidal core in a dielectric layer on n metal wiring layers of each wound copper coil and m metal wiring layers of each induced copper coil comprises:

and preparing a seventh dielectric layer on the third layer of wiring copper layer, the third layer of induction wiring copper layer and the sixth dielectric layer, preparing an annular groove on the seventh dielectric layer, and embedding a magnetic core in the annular groove.

16. The method for manufacturing a metal wiring layer structure with power management function according to claim 15, wherein the step of manufacturing n metal wiring layers for each wound copper coil and m metal wiring layers for each induced copper coil on the toroidal core to form the metal winding layer comprises:

preparing an eighth dielectric layer on the seventh dielectric layer, and preparing a fourth wiring copper layer, a fourth induction wiring copper layer and a ninth dielectric layer on the eighth dielectric layer;

preparing a first copper blind hole at the second end of the fourth wiring copper layer and a second connecting copper column at the first end of the fourth wiring copper layer, so that the fourth wiring copper layer is connected with the third wiring copper layer through the first copper blind hole, and the fourth wiring copper layer is connected with the conductive column in the first metal wiring layer through the second connecting copper column; preparing a first induction copper blind hole at the second end of the fourth induction wiring copper layer, so that the fourth induction wiring copper layer is connected with the third induction wiring copper layer through the first induction copper blind hole;

preparing a tenth dielectric layer on the ninth dielectric layer, and preparing a fifth wiring copper layer, a fifth induction wiring copper layer and an eleventh dielectric layer on the tenth dielectric layer;

preparing a second copper blind hole at the second end of the fifth layer wiring copper layer and a third copper blind hole at the first end of the fifth layer wiring copper layer, so that the fifth layer wiring copper layer is connected with the second layer wiring copper layer through the second copper blind hole and is connected with the third layer wiring copper layer through the third copper blind hole; preparing a second induction copper blind hole at the second end of the fifth layer induction wiring copper layer and a third induction copper blind hole at the first end of the fifth layer induction wiring copper layer, so that the fifth layer induction wiring copper layer is connected with the second layer induction wiring copper layer through the second induction copper blind hole, and the fifth layer induction wiring copper layer is connected with the third layer induction wiring copper layer through the third induction copper blind hole;

preparing a twelfth dielectric layer on the fifth wiring copper layer, the fifth induction wiring copper layer and the eleventh dielectric layer, and preparing a sixth wiring copper layer, a sixth induction wiring copper layer and a thirteenth dielectric layer on the twelfth dielectric layer;

preparing a fourth copper blind hole at the second end of the sixth wiring copper layer and a fifth copper blind hole at the second end of the sixth wiring copper layer, so that the sixth wiring copper layer is connected with the first wiring copper layer through the fourth copper blind hole and the sixth wiring copper layer is connected with the second wiring copper layer through the fifth copper blind hole; preparing a fourth induction copper blind hole at the second end of the sixth induction wiring copper layer and a fifth induction copper blind hole at the first end of the sixth induction wiring copper layer, so that the sixth induction wiring copper layer is connected with the first induction wiring copper layer through the fourth induction copper blind hole, and the sixth induction wiring copper layer is connected with the second induction wiring copper layer through the fifth induction copper blind hole;

and preparing a fourteenth dielectric layer on the fifth wiring layer, the sixth induction wiring layer and the thirteenth dielectric layer.

17. The method for manufacturing a metal wiring layer structure with power management function according to claim 16, wherein the step of manufacturing a second signal transmission layer on the metal winding layer and peeling off the carrier to form the metal wiring layer structure with power management function comprises:

electroplating a metal layer on the fourteenth dielectric layer to form a second ground layer;

coating photoresist on the second ground layer, and preparing a second metal wiring layer through a photoetching process and an electroplating process, wherein the second metal wiring layer comprises a second conductive pillar array and a second insulating layer covering the second conductive pillar array;

manufacturing a first signal copper column and a second signal copper column on the second metal wiring layer, so that the first tail end of the first layer of induction wiring layer is connected with the second conductive column array through the first signal copper column, and the first tail end of the fourth layer of induction wiring layer is connected with the second conductive column array through the second signal copper column;

and stripping the carrier plate to obtain the multilayer metal wiring layer structure with the power management function.

18. The method of fabricating a metal wiring layer structure having a power management function as claimed in claim 17, wherein before plating a metal layer on the fourteenth dielectric layer to form a second ground layer, the method further comprises:

through holes are formed in the periphery of the fourteenth dielectric layer, and a first copper pillar side wall, a second copper pillar side wall, a third copper pillar side wall and a fourth copper pillar side wall are obtained through electroplating, so that the first section of the first copper pillar side wall, the first section of the second copper pillar side wall, the first section of the third copper pillar side wall and the first section of the fourth copper pillar side wall are connected with the first ground layer.

19. The method of fabricating a metal wiring layer structure with power management function according to claim 17, wherein before fabricating a tenth dielectric layer on said ninth dielectric layer, said method further comprises:

embedding a resistor, a first inductor, a second inductor, a first capacitor and a second capacitor on the ninth dielectric layer, so that a first end of the resistor is connected with a first tail end of the fourth layer of induction wiring copper layer, and a second end of the resistor is connected with a first end of the first layer of induction wiring copper layer; connecting a first end of the first inductor with a first end of the fourth layer of induction wiring copper layer, connecting a second end of the first inductor with a first end of the second inductor, and connecting a second end of the second inductor with a first end of the first layer of induction wiring copper layer; and connecting the first end of the first capacitor with the second end of the first inductor, connecting the second end of the first capacitor with the second ground layer, connecting the first end of the second capacitor with the second end of the second inductor, and connecting the first end of the second capacitor with the first ground layer.