CN114280712A - Method for manufacturing color filter film applied to silicon-based OLED micro display screen - Google Patents
Method for manufacturing color filter film applied to silicon-based OLED micro display screen Download PDFInfo
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- CN114280712A CN114280712A CN202111617450.1A CN202111617450A CN114280712A CN 114280712 A CN114280712 A CN 114280712A CN 202111617450 A CN202111617450 A CN 202111617450A CN 114280712 A CN114280712 A CN 114280712A
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- color
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 29
- 239000010703 silicon Substances 0.000 title claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 124
- 239000010408 film Substances 0.000 claims abstract description 21
- 238000005530 etching Methods 0.000 claims abstract description 13
- 239000010409 thin film Substances 0.000 claims abstract description 8
- 238000004806 packaging method and process Methods 0.000 claims abstract description 7
- 238000001312 dry etching Methods 0.000 claims description 11
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 239000000460 chlorine Substances 0.000 claims description 2
- 239000003086 colorant Substances 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 238000004528 spin coating Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
Images
Abstract
The invention relates to a method for manufacturing a color filter film applied to a silicon-based OLED micro display screen, which comprises the following steps: the method comprises the following steps: manufacturing a layer of first color photoresist on a thin film packaging layer of a silicon-based OLED micro display screen, wherein the color of the first color photoresist is one of red, green and blue; step two: manufacturing a pattern transfer layer on the first color photoresist; step three: etching the pattern transfer layer to transfer the pattern of the pattern transfer layer into the first color photoresist; and repeating the first step to the third step to manufacture a second color photoresist and a third color photoresist to obtain the color filter film applied to the silicon-based OLED micro display screen. The invention can manufacture a high-performance color filter film.
Description
Technical Field
The invention relates to the field of manufacturing of light filtering films, in particular to a method for manufacturing a color light filtering film applied to a silicon-based OLED micro display screen.
Background
With the continuous development of wearable technology, market application of AR/VR is rapidly expanding. Meanwhile, in information interaction of AR/VR equipment, a novel display screen is used as an important part of information display, and more products are applied. In the novel display screen technology, the silicon-based OLED micro-display screen technology is developed rapidly, related products are matured more and more, much attention is paid to the silicon-based OLED display screen technology at home and abroad, even apple companies transmit messages recently, and the MR product adopts a large-size 4K-level silicon-based OLED display screen.
At present, color filter films (color filters, hereinafter referred to as CF) in silicon-based micro display screens in the market are mostly manufactured by adopting a semiconductor photoetching machine, and when a large-size (0.9-2.0 inches) micro display screen is manufactured, the problem of insufficient field of view of an exposure machine exists. This can lead to when carrying out jumbo size exposure, and the effective display area of display screen can have the phenomenon of concatenation, can appear the concatenation vestige when lighting the screen, influences the screen very much and watches experience. However, in the aspect of VR application, the large-size silicon-based micro display screen is still very beneficial to the improvement of the field angle, and the immersion experience is increased, so that the splicing problem is in urgent need of improvement.
Meanwhile, the silicon-based micro display screen cannot prevent light leakage by adding a black matrix in the traditional liquid crystal CF due to the very small size of red, green and blue sub-pixels, so that the problem of light leakage of sub-pixel gaps can be caused, the color purity of a single color in a light-emitting spectrum is reduced, and the color gamut is reduced.
Disclosure of Invention
The invention aims to provide a method for manufacturing a color filter film applied to a silicon-based OLED micro display screen, which can manufacture a high-performance color filter film.
In order to achieve the purpose, the invention provides the following scheme:
a method for manufacturing a color filter film applied to a silicon-based OLED micro display screen comprises the following steps:
the method comprises the following steps: manufacturing a layer of first color photoresist on a thin film packaging layer of a silicon-based OLED micro display screen, wherein the color of the first color photoresist is one of red, green and blue;
step two: manufacturing a pattern transfer layer on the first color photoresist;
step three: etching the pattern transfer layer to transfer the pattern of the pattern transfer layer into the first color photoresist;
and repeating the first step to the third step, and manufacturing a second color photoresist and a third color photoresist to obtain a color filter film applied to the silicon-based OLED micro display screen, wherein the colors of the second color photoresist and the third color photoresist are respectively two except the color of the first color photoresist, and the first color photoresist, the second color photoresist and the third color photoresist are positioned on the same layer.
Optionally, the edges of the first color photoresist, the second color photoresist and the third color photoresist after being manufactured form an inclined angle with the thin film encapsulation layer.
Optionally, an overlapping portion exists between two adjacent color photoresists in the first color photoresist, the second color photoresist and the third color photoresist.
Optionally, the pattern transfer layer is a combination of a layer of non-pattern photoresist and a layer of patterned photoresist.
Optionally, the pattern transfer layer is a layer of patterned photoresist.
Optionally, the pattern transfer layer is etched by dry etching.
Optionally, the dry etching gas is fluorine-based or chlorine-based, the pressure is 0.1Pa to 3Pa, the flow rate is 2sccm to 20sccm, and the etching time is 3min to 30 min.
Optionally, the etching ratio of the patterned photoresist to the non-patterned photoresist is 1: 0.7-1.5.
Optionally, the thicknesses of the first color photoresist, the second color photoresist and the third color photoresist are 0.5um to 3 um.
Optionally, the overlapping width between two adjacent color photoresists in the first color photoresist, the second color photoresist and the third color photoresist is 0.1 um-1 um.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
according to the invention, the surface of the packaging layer film based on the surface of the silicon-based OLED is directly manufactured, and a scheme of pattern transfer is adopted, so that the splicing trace phenomenon caused by insufficient field of view of an exposure machine during the manufacturing of the large-size micro display screen CF can be effectively reduced, and the splicing defect of the large-size micro display screen is reduced; by a dry etching method, a photoresist pattern with a certain inclination angle with a substrate is manufactured, and then edges of red, green and blue photoresists are overlapped at the position of the distance between the CMOS pixels, so that light leakage of sub-pixels is avoided, and the color gamut is effectively improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a cross-sectional view of a color filter according to the present invention;
FIG. 2 is a cross-sectional view of the backplate of the present invention after the surface has been coated with a first color photoresist;
FIG. 3 is a cross-sectional view of the backplate of the present invention after spin coating three layers of photoresist on the surface;
FIG. 4 is a cross-sectional view of the back plate after the patterned photoresist process of the back plate surface of the present invention is completed;
FIG. 5 is a cross-sectional view of the backplane of the present invention after completion of the blanket photoresist process;
FIG. 6 is a cross-sectional view of the back plate after a first color photoresist pattern has been formed on the surface of the back plate.
Description of the symbols:
the manufacturing method comprises the following steps of 1-silicon-based CMOS driving backboard, 2-OLED layer, 3-thin film packaging layer, 4-third color photoresist, 5-second color photoresist, 6-first color photoresist, 7-non-pattern photoresist and 8-pattern photoresist.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a method for manufacturing a color filter film applied to a silicon-based OLED micro display screen, which can manufacture a high-performance color filter film.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
The invention provides a method for manufacturing a color filter film applied to a silicon-based OLED micro display screen, which comprises the following specific steps of:
step 1: the silicon-based CMOS driving back plate 1, the OLED layer 2 and the thin film packaging layer 3 form a silicon-based OLED micro display screen which is a substrate structure, then one of red, green and blue photoresists is coated on the surface of the thin film packaging layer 3 in a spinning mode, and then pre-baking, whole-surface exposure and post-baking are carried out to manufacture the first color photoresist 6 in the figure 2. The pre-baking temperature can be 60-110 ℃, and the time can be 30-300 s; the exposure mode can be full-face exposure; the temperature of the post-baking can be 60-110 ℃, and the time can be 3-60 min; the thickness of the first color photoresist 6 may be 0.5um to 3 um.
Step 2: on the basis of the first color photoresist 6 in fig. 2, a pattern transfer layer photoresist is continuously manufactured, wherein the pattern transfer layer can be a layer of patterned photoresist 8 or a combination of a layer of non-patterned photoresist 7 and a layer of patterned photoresist 8, wherein the third color photoresist 4, the second color photoresist 5, the first color photoresist 6 and the non-patterned photoresist 7 are required to form a certain inclination angle with the substrate after the edge of each layer of photoresist in the patterned photoresist 8 is manufactured. Firstly, spin coating, prebaking, exposing and postbaking are carried out to prepare the non-pattern photoresist 7, the thickness of the spin coating non-pattern photoresist 7 can be 0.5 um-3 um, the postbaking temperature can be 60-110 ℃, and the time can be 3 min-60 min. Then spin coating, prebaking, exposing, developing and postbaking to manufacture the patterned photoresist 8, wherein the thickness of the spin-coated patterned photoresist 8 can be 0.5-3 um, and a cross-sectional view after the spin coating of the patterned photoresist 8 is shown in fig. 3; the exposure mode can be single exposure of the whole shot of a single display chip in the wafer, or multiple splicing exposure of the whole shot, wherein the splicing times can be 2-8; the developing solution can be KOH or TMAH; the temperature of the post-baking can be 60-110 ℃, and the time can be 3-60 min. Finally, the profile of the cross section in fig. 4 is produced.
And step 3: the surface in fig. 4 is etched, i.e., the non-patterned photoresist 7 and the patterned photoresist 8, so that the pattern of the pattern transfer layer is transferred into the first color photoresist 6. The etching manner may be dry etching. The gas for dry etching can be fluorine radical or chlorine radical, the pressure can be 0.1 Pa-3 Pa, and the flow rate can be: 2 sccm-20 sccm; the etching time can be 3min to 30min, the etching ratio of the patterned photoresist 8 to the non-patterned photoresist 7 can be 1:0.7 to 1.5, and the effect in the graph 5 is finally etched.
And 4, step 4: the surface in fig. 5 is etched, and the etching manner may be dry etching. The gas for dry etching can be fluorine radical or chlorine radical, the pressure can be 0.1 Pa-3 Pa, and the flow rate can be: 2 sccm-20 sccm; the etching time can be 3min to 30min, the etching ratio of the non-pattern photoresist 7 to the first color photoresist 6 can be 1:0.5 to 2, and the effect in the image 6 is finally etched.
And 5: the patterns of the second color photoresist 5 and the third color photoresist 4 are sequentially manufactured according to the steps 1, 2, 3 and 4, the 3 photoresist patterns of the third color photoresist 4, the second color photoresist 5 and the first color photoresist 6 are sequentially arranged according to the sequence of the sub-pixels of the silicon-based Micro OLED display screen, and the patterns of the third color photoresist 4, the second color photoresist 5 and the first color photoresist 6 are overlapped. The width of the overlapping region between the third color photoresist 4 and the second color photoresist 5, and between the second color photoresist 5 and the first color photoresist 6 may be 0.1um to 1 um. Generally, when the second color photoresist 5 and the first color photoresist 6 are overlapped, the edge of the second color photoresist 5 covers the edge of the first color photoresist 6, and the coverage width may be 0.1um to 1 um; when the third color photoresist 4 and the second color photoresist 5 are overlapped, the edge of the third color photoresist 4 covers the edge of the second color photoresist 5, and the covering width may be 0.1um to 1 um. After the first color photoresist 6, the second color photoresist 5 and the third color photoresist 4 are manufactured, the manufacturing of the color filter film of the silicon-based OLED micro-display is completed, and the result is shown in fig. 1.
The invention also discloses the following technical effects:
according to the invention, by utilizing a photoetching process and a dry etching process, a pattern transfer method and a pattern transfer scheme, the phenomenon of splicing marks caused by insufficient field of view of an exposure machine during the manufacture of the large-size micro display screen CF can be effectively reduced, and the splicing defect of the large-size micro display screen is reduced; by a dry etching method, a photoresist pattern with a certain inclination angle with a substrate is manufactured, and then edges of red, green and blue photoresists are overlapped at the position of the distance between the CMOS pixels, so that light leakage of sub-pixels is avoided, the color gamut is effectively improved, and a high-performance color filter film is manufactured.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. For the system disclosed by the embodiment, the description is relatively simple because the system corresponds to the method disclosed by the embodiment, and the relevant points can be referred to the method part for description.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (10)
1. A method for manufacturing a color filter film applied to a silicon-based OLED micro display screen is characterized by comprising the following steps:
the method comprises the following steps: manufacturing a layer of first color photoresist on a thin film packaging layer of a silicon-based OLED micro display screen, wherein the color of the first color photoresist is one of red, green and blue;
step two: manufacturing a pattern transfer layer on the first color photoresist;
step three: etching the pattern transfer layer to transfer the pattern of the pattern transfer layer into the first color photoresist;
and repeating the first step to the third step, and manufacturing a second color photoresist and a third color photoresist to obtain a color filter film applied to the silicon-based OLED micro display screen, wherein the colors of the second color photoresist and the third color photoresist are respectively two except the color of the first color photoresist, and the first color photoresist, the second color photoresist and the third color photoresist are positioned on the same layer.
2. The method of claim 1, wherein the edges of the first, second, and third photoresists after fabrication form an oblique angle with the thin film encapsulation layer.
3. The method of claim 1, wherein the first, second, and third color photoresists have overlapping portions between two adjacent color photoresists.
4. The method as claimed in claim 1, wherein the pattern transfer layer is a combination of a non-patterned photoresist and a patterned photoresist.
5. The method as claimed in claim 1, wherein the pattern transfer layer is a patterned photoresist.
6. The method of claim 1, wherein the pattern transfer layer is etched by dry etching.
7. The method as claimed in claim 6, wherein the dry etching gas is fluorine or chlorine, the pressure is 0.1 Pa-3 Pa, the flow rate is 2 sccm-20 sccm, and the etching time is 3 min-30 min.
8. The method for manufacturing the color filter film applied to the silicon-based OLED micro-display screen according to claim 4, wherein the etching ratio of the patterned photoresist to the non-patterned photoresist is 1: 0.7-1.5.
9. The method of claim 1, wherein the first, second, and third color photoresists have a thickness of 0.5um to 3 um.
10. The method for manufacturing a color filter film applied to a silicon-based OLED micro-display screen according to claim 3, wherein the overlapping width between two adjacent color photoresists in the first, second and third color photoresists is 0.1-1 um.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111617450.1A CN114280712A (en) | 2021-12-27 | 2021-12-27 | Method for manufacturing color filter film applied to silicon-based OLED micro display screen |
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| CN202111617450.1A CN114280712A (en) | 2021-12-27 | 2021-12-27 | Method for manufacturing color filter film applied to silicon-based OLED micro display screen |
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| CN101614955A (en) * | 2008-06-27 | 2009-12-30 | 新科实业有限公司 | On substrate, form the engraving method of multi-stage surface |
| CN102403420A (en) * | 2011-11-11 | 2012-04-04 | 哈尔滨工业大学深圳研究生院 | Preparation method for graphical sapphire substrate |
| US20120088325A1 (en) * | 2010-10-08 | 2012-04-12 | Panasonic Liquid Crystal Display Co., Ltd. | Manufacturing method of display device |
| JP2015034994A (en) * | 2014-09-24 | 2015-02-19 | 株式会社ジャパンディスプレイ | Liquid crystal display device |
| CN104810273A (en) * | 2014-01-26 | 2015-07-29 | 国家电网公司 | Silicon carbide etching method |
| CN106504981A (en) * | 2016-10-14 | 2017-03-15 | 电子科技大学 | A kind of method for preparing the controllable gentle slope micro structure of angle |
| CN113140690A (en) * | 2021-04-28 | 2021-07-20 | 安徽熙泰智能科技有限公司 | Method for manufacturing submicron-level color filter layer of silicon-based OLED device |
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2021
- 2021-12-27 CN CN202111617450.1A patent/CN114280712A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006071680A (en) * | 2004-08-31 | 2006-03-16 | Seiko Epson Corp | Electrooptical device, manufacturing method of electrooptical device and electronic apparatus |
| CN101154049A (en) * | 2006-09-29 | 2008-04-02 | 中国科学院长春光学精密机械与物理研究所 | Method for producing photoresist pattern |
| CN101614955A (en) * | 2008-06-27 | 2009-12-30 | 新科实业有限公司 | On substrate, form the engraving method of multi-stage surface |
| US20120088325A1 (en) * | 2010-10-08 | 2012-04-12 | Panasonic Liquid Crystal Display Co., Ltd. | Manufacturing method of display device |
| CN102403420A (en) * | 2011-11-11 | 2012-04-04 | 哈尔滨工业大学深圳研究生院 | Preparation method for graphical sapphire substrate |
| CN104810273A (en) * | 2014-01-26 | 2015-07-29 | 国家电网公司 | Silicon carbide etching method |
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| CN106504981A (en) * | 2016-10-14 | 2017-03-15 | 电子科技大学 | A kind of method for preparing the controllable gentle slope micro structure of angle |
| CN113140690A (en) * | 2021-04-28 | 2021-07-20 | 安徽熙泰智能科技有限公司 | Method for manufacturing submicron-level color filter layer of silicon-based OLED device |
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