CN114267707A - OLED display panel and electronic equipment - Google Patents
OLED display panel and electronic equipment Download PDFInfo
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- CN114267707A CN114267707A CN202111531928.9A CN202111531928A CN114267707A CN 114267707 A CN114267707 A CN 114267707A CN 202111531928 A CN202111531928 A CN 202111531928A CN 114267707 A CN114267707 A CN 114267707A
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Abstract
The application discloses OLED display panel and electronic equipment. The OLED display panel is provided with a bending area and a non-bending area located on one side of the bending area, an opening is formed in the OLED display panel, and the opening is located in the bending area; the OLED display panel comprises a substrate and a thin film transistor layer; the thin film transistor layer is arranged on one side of the substrate and comprises an insulating layer, and the insulating layer extends from the non-bending area to the bending area; the opening comprises a first sub-opening, the first sub-opening is located in the insulating layer, and a first step structure is formed by the top surface of the insulating layer and the wall of the first sub-opening. According to the method and the device, the corrosion risk of the metal wire in the TFT device layer is reduced.
Description
Technical Field
The application relates to the technical field of display, in particular to an OLED display panel and electronic equipment.
Background
With the increasing popularity of the mobile phone with the curved screen among consumers, the requirement on the bending performance of the curved display screen is higher. The bending parts at the four corners of the curved display screen have large tensile stress, and the bending parts at the four corners are usually required to be opened to improve the stretchability of the curved display screen. However, because the pore wall of the opening is usually vertical, in the bending process of the curved-surface display screen, the stress between adjacent Film layers is large, cracks are easily generated at the side wall of the opening, when external water vapor invades the Thin Film Transistor (TFT) device layer along the side wall of the opening, the probability of the cracks expanding towards the TFT device layer is increased, and then the probability of the water vapor entering the TFT device is increased, so that the corrosion risk of the metal wire in the TFT device layer can be increased.
Disclosure of Invention
The embodiment of the application provides an OLED display panel and electronic equipment, so that the corrosion risk of metal wires in a TFT device layer is reduced.
The embodiment of the application provides an OLED display panel, it has the district of buckling and is located the non-bending region of district one side of buckling, the trompil has been seted up in the OLED display panel, the trompil is located the district of buckling, OLED display panel includes:
a substrate; and
the thin film transistor layer is arranged on one side of the substrate and comprises an insulating layer, and the insulating layer extends from the non-bending area to the bending area;
the opening comprises a first sub-opening, the first sub-opening is located in the insulating layer, and a first step structure is formed by the top surface of the insulating layer and the wall of the first sub-opening.
Optionally, in some embodiments of the present application, the insulating layer includes a gate insulating layer and an interlayer dielectric layer, the gate insulating layer is located on one side of the interlayer dielectric layer close to the substrate, and the first sub-opening penetrates through the gate insulating layer and the interlayer dielectric layer;
the first sub-opening comprises a first hole and a second hole, the first hole is located in the gate insulating layer, the second hole is located in the interlayer dielectric layer, and the interlayer dielectric layer is close to the top surface of the second hole, the hole wall of the second hole, the gate insulating layer is close to the top surface of the first hole, and the hole wall of the first hole form the first step structure.
Optionally, in some embodiments of the present application, the OLED display panel further includes a buffer layer disposed between the substrate and the thin-film transistor layer, the buffer layer extending from the non-bending region to the bending region;
the opening further comprises a second sub opening communicated with the first sub opening, the second sub opening is located in the buffer layer, and the surface of the first step structure, the top surface of the buffer layer close to the second sub opening and the hole wall of the second sub opening form a second step structure.
Optionally, in some embodiments of the present application, the OLED display panel further includes a first organic layer, a second organic layer, and an inorganic layer, the second organic layer is located between the first organic layer and the inorganic layer, and the first organic layer is located on a side of the second organic layer close to the thin-film transistor layer;
the opening further comprises a third sub-opening communicated with the first sub-opening, and the third sub-opening penetrates through the inorganic layer, the second organic layer and the first organic layer and exposes the top surface of the interlayer dielectric layer.
Optionally, in some embodiments of the present application, the OLED display panel further includes a first organic layer covering the second step structure.
Optionally, in some embodiments of the present application, the first organic layer is disposed on a side of the thin-film transistor layer away from the substrate and extends from the non-bending region to the bending region;
the OLED display panel further comprises a second organic layer and an inorganic layer, the second organic layer is located between the first organic layer and the inorganic layer, the opening further comprises a third sub-opening communicated with the first sub-opening, the third sub-opening penetrates through the inorganic layer and the second organic layer, and the first organic layer is exposed to the far away of the surface of the first step structure.
Optionally, in some embodiments of the present application, the OLED display panel further includes an inorganic layer covering the first organic layer.
Optionally, in some embodiments of the present application, the inorganic layer is disposed on a side of the first organic layer away from the thin-film transistor layer, and both the inorganic layer and the first organic layer extend from the non-bending region to the bending region;
the OLED display panel further comprises a second organic layer, the second organic layer is located between the first organic layer and the inorganic layer, the opening further comprises a third sub-opening communicated with the first sub-opening, the third sub-opening penetrates through the second organic layer, and the inorganic layer extends from the hole wall of the third sub-opening and covers the first organic layer.
Optionally, in some embodiments of the present application, the OLED display panel further includes a first organic layer, a second organic layer, and an inorganic layer, the second organic layer is located between the first organic layer and the inorganic layer, and the first organic layer is located on a side of the second organic layer close to the thin-film transistor layer;
the opening further comprises a third sub-opening communicated with the first sub-opening, the third sub-opening penetrates through the inorganic layer and the first organic layer, and the second organic layer extends from the first organic layer close to the hole wall of the third sub-opening and covers the second step structure.
The embodiment of the application further provides electronic equipment, the electronic equipment comprises a shell and an OLED display panel arranged in the shell, and the OLED display panel is the OLED display panel in any one of the preceding embodiments.
Compare in OLED display panel among the prior art, in the OLED display panel that this application provided, the trompil in the district of buckling includes first sub-trompil, first sub-trompil is located the insulating layer on thin film transistor layer, this application forms first stair structure through the pore wall that makes the top surface of insulating layer and first sub-trompil, and then in OLED display panel's crooked in-process, can release the stress that the insulating layer received, and then can reduce the production probability of first sub-trompil pore wall department crackle, with the probability that reduces external steam and get into thin film transistor layer, thereby can reduce thin film transistor in-situ metal conductor's corrosion risk.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required to be used in the description of the embodiments are briefly introduced below, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic plan view of an OLED display panel according to a first embodiment of the present disclosure.
Fig. 2 is a schematic cross-sectional structure diagram of an OLED display panel according to a first embodiment of the present application.
Fig. 3 is a schematic cross-sectional structure diagram of an OLED display panel according to a second embodiment of the present application.
Fig. 4 is a schematic cross-sectional structure diagram of an OLED display panel according to a third embodiment of the present application.
Fig. 5 is a schematic cross-sectional structure diagram of an OLED display panel according to a fourth embodiment of the present application.
Fig. 6 is a schematic cross-sectional structure diagram of an OLED display panel according to a fifth embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. Furthermore, it should be understood that the detailed description and specific examples, while indicating exemplary embodiments of the invention, are given by way of illustration and explanation only, and are not intended to limit the scope of the invention. In the present application, unless indicated to the contrary, the use of the directional terms "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, and more particularly to the orientation of the figures of the drawings; while "inner" and "outer" are with respect to the outline of the device.
The embodiment of the application provides an OLED display panel and electronic equipment. The following are detailed below. It should be noted that the following description of the embodiments is not intended to limit the preferred order of the embodiments.
The application provides an OLED display panel, which is provided with a bending area and a non-bending area positioned on one side of the bending area. The OLED display panel is provided with an opening, and the opening is located in the bending area. The OLED display panel includes a substrate and a thin-film transistor layer. The thin-film transistor layer is disposed on one side of the substrate. The thin-film transistor layer includes an insulating layer. The insulating layer extends from the non-bending region to the bending region. Wherein the opening comprises a first sub-opening. The first sub-opening is located in the insulating layer. The top surface of the insulating layer and the hole wall of the first sub-opening form a first step structure.
From this, in the OLED display panel that this application provided, the trompil in district of buckling includes first sub-trompil, first sub-trompil is located the insulating layer on thin film transistor layer, this application forms first stair structure through the pore wall that makes the top surface of insulating layer and first sub-trompil, and then at the crooked in-process of OLED display panel, the stress that the insulating layer received can be released, and then the production probability of first sub-trompil pore wall department crackle can be reduced, with the probability that reduces external steam and get into thin film transistor layer, thereby can reduce thin film transistor in situ metal conductor's corrosion risk.
The OLED display panel provided in the present application is explained in detail by specific embodiments below.
Referring to fig. 1 and fig. 2, a first embodiment of the present application provides an OLED display panel 100. The OLED display panel 100 has a bending region 11 and a non-bending region 12 at one side of the bending region 11. The OLED display panel 100 has an opening 13 formed therein. The opening 13 is located in the bending region 11.
As shown in fig. 1, the bending regions 11 are located at four corners of the OLED display panel 100, and this arrangement can make the OLED display panel 100 have better stretching performance in the bending regions 11, so that when a curved display screen is manufactured, the display screen at the four corners can be effectively stretched, and the display screen can be prevented from being wrinkled. The shape of the opening 13 may be square, rectangular, circular, triangular, etc., and the number of the openings 13 in each bending region 11 may be one, two, or more, and the application does not specifically limit the shape of the opening 13 and the number of the openings 13 in each bending region 11.
As shown in fig. 2, the OLED display panel 100 includes a substrate 10 and a thin-film transistor layer 20. Opening 13 extends through thin-film-transistor layer 20 and exposes a surface of substrate 10.
Specifically, the substrate 10 may be a flexible substrate, such as a polyimide substrate.
Thin-film-transistor layer 20 is disposed on one side of substrate 10. Thin-film-transistor layer 20 includes an insulating layer 21. The insulating layer 21 extends from the non-bending region 12 to the bending region 11. The opening 13 includes a first sub-opening 131. The first sub-opening 131 is located in the insulating layer 21. Wherein the top surface of the insulating layer 21 and the hole walls of the first sub-openings 131 form a first step structure 21A.
In this embodiment, the top surface of the insulating layer 21 and the hole wall of the first sub-opening 131 form the first step structure 21A, which is helpful for releasing stress applied to the insulating layer 21 during the bending process of the OLED display panel 100, so that the generation probability of cracks at the hole wall of the first sub-opening 131 can be reduced, the probability of external water vapor entering the thin film transistor layer 20 can be reduced, and the corrosion risk of metal wires in the thin film transistor layer 20 can be reduced.
Specifically, the insulating layer 21 includes a gate insulating layer 211 and an interlayer dielectric layer 212. The gate insulating layer 211 is located on one side of the interlayer dielectric layer 212 close to the substrate 10. The material of the gate insulating layer 211 and the material of the interlayer dielectric layer 212 may each include one or more of silicon nitride, silicon oxide, and silicon oxynitride.
In the present embodiment, the first sub-opening 131 penetrates the gate insulating layer 211 and the interlayer dielectric layer 212. The first sub-aperture 131 includes a first hole 131a and a second hole 131 b. The first hole 131a is located in the gate insulating layer 211. The second hole 131b is located in the interlayer dielectric layer 212. The interlayer dielectric layer 212 is adjacent to the top surface of the second hole 131b, the hole wall of the second hole 131b, the gate insulating layer 211 is adjacent to the top surface of the first hole 131A, and the hole wall of the first hole 131A define and form a first step structure 21A.
Note that, in some embodiments, a step structure may also be formed at a junction between the top surface of the gate insulating layer 211 and the wall of the first hole 131 a; or, a step structure may be formed at the junction of the top surface of the interlayer dielectric layer 212 and the hole wall of the second hole 131 b; further, a step structure may be formed at the junction between the top surface of the gate insulating layer 211 and the hole wall of the first hole 131a, and at the same time, a step structure may be formed at the junction between the top surface of the interlayer dielectric layer 212 and the hole wall of the second hole 131b, which is not described herein again.
In the present embodiment, the thin-film transistor layer 20 further includes an active layer 22, a gate 23, and a source-drain metal layer 24, which are sequentially disposed. The active layer 22, the gate electrode 23 and the source-drain metal layer 24 are all located in the non-bending region 12. The gate insulating layer 211 is positioned between the active layer 22 and the gate electrode 23. The interlayer dielectric layer 212 is located between the gate 23 and the source-drain metal layer 24. The specific structures and materials of the active layer 22, the gate 23, and the source-drain metal layer 24 can all refer to the prior art, and are not described herein again.
The OLED display panel 100 further includes a barrier layer 30 and a buffer layer 40 disposed on the substrate 10. Buffer layer 40 is located between barrier layer 30 and thin-film-transistor layer 20. Both barrier layer 30 and buffer layer 40 extend from non-inflection region 12 to inflection region 11. Wherein, the material of the barrier layer 30 and the material of the buffer layer 40 may each include one or more of silicon nitride, silicon oxide, and silicon oxynitride.
In the present embodiment, the opening 13 further includes a second sub-opening 132 connected to the first sub-opening 131. The second sub-opening 132 sequentially penetrates the buffer layer 40 and the barrier layer 30. The walls of the second sub-apertures 132 are flush with the walls of the first apertures 131a and perpendicular to the plane of the substrate 10.
The OLED display panel 100 further includes a first organic layer 50, a second organic layer 60, and an inorganic layer 70. The second organic layer 60 is located between the first organic layer 50 and the inorganic layer 70. First organic layer 50 is located on a side of second organic layer 60 that is adjacent to thin-film-transistor layer 20. The first organic layer 50, the second organic layer 60, and the inorganic layer 70 extend from the non-bending region 12 to the bending region 11.
The first organic layer 50 and the second organic layer 60 are both planarized organic film layers. The material of the first organic layer 50 and the material of the second organic layer 60 may each include one or more of a polyacryl-based resin, a polyimide-based resin, a polyamide-based resin, a siloxane-based resin, an acryl-based resin, and an epoxy-based resin. The inorganic layer 70 is a passivation film layer. The material of the inorganic layer 70 may include one or more of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, titanium oxide, tantalum oxide, hafnium oxide, and zirconium oxide.
In this embodiment, the opening 13 further includes a third sub-opening 133 connected to the first sub-opening 131, and the third sub-opening 133 sequentially penetrates through the inorganic layer 70, the second organic layer 60 and the first organic layer 50 and exposes the top surface of the interlayer dielectric layer 212.
It should be noted that, in the present embodiment, the OLED display panel 100 further includes a light emitting layer and an encapsulation layer (not shown) disposed on a side of the inorganic layer 70 away from the second organic layer 60, and related technologies are all related art and will not be described herein again.
In summary, in the OLED display panel 100 provided in the first embodiment of the present application, the interlayer dielectric layer 212 is close to the top surface of the second hole 131b, the hole wall of the second hole 131b, the gate insulating layer 211 is close to the top surface of the first hole 131A, and the hole wall of the first hole 131A to form the first step structure 21A, that is, from the inorganic layer 70 toward the substrate 10, the film widths of the thin film transistor layer 20 corresponding to the opening 13 are sequentially reduced to be step-shaped, so that in the bending process of the panel, the stress between the insulating films in the thin film transistor layer 20 can be released, the probability of crack propagation at the hole wall position of the opening 13 corresponding to the thin film transistor layer 20 can be reduced, thereby the probability of external moisture entering the thin film transistor layer 20 can be reduced, and the risk of corrosion of metal wires in the thin film transistor layer 20 can be reduced.
Referring to fig. 3, a second embodiment of the present application provides an OLED display panel 100. The second embodiment of the present application provides an OLED display panel 100 different from the first embodiment in that: the surface of the first step structure 21A, the top surface of the buffer layer 40 near the second sub-opening 132, the top surface of the barrier layer 30 near the second sub-opening 132, and the wall of the second sub-opening 132 define a second step structure 21B.
Since the barrier layer 30 and the buffer layer 40 are both inorganic film layers, the second step structure 21B is formed in the OLED display panel 100 in this embodiment, so that the film layer structures of the hole wall of the opening 13 corresponding to the barrier layer 30, the buffer layer 40 and the thin film transistor layer 20 are entirely step-shaped, and further, in the bending process of the OLED display panel 100, the stress on the insulating layer 21, the barrier layer 30 and the buffer layer 40 in the thin film transistor layer 20 can be released at the same time, so that the probability of crack propagation at the hole wall of the opening 13 can be further reduced.
Referring to fig. 4, a third embodiment of the present application provides an OLED display panel 100. The third embodiment of the present application provides an OLED display panel 100 different from the second embodiment in that: the first organic layer 50 covers the second step structure 21B, the third sub-opening 133 only penetrates through the inorganic layer 70 and the second organic layer 60, and the surface of the first organic layer 50 away from the first step structure 21A is exposed by the third sub-opening 133.
In this embodiment, the first organic layer 50 covers the second step structure 21B, so that the invasion path of external water vapor can be delayed, thereby further reducing the crack propagation probability caused by factors such as panel bending, facilitating further reducing the corrosion risk of the metal wires in the thin film transistor layer 20, and further improving the driving performance of the thin film transistor.
Referring to fig. 5, a fourth embodiment of the present application provides an OLED display panel 100. The OLED display panel 100 according to the fourth embodiment of the present application is different from the third embodiment in that: the third sub-opening 133 extends through only the second organic layer 60, and the inorganic layer 70 extends from the wall of the third sub-opening 133 and covers the first organic layer 50.
Because inorganic layer 70 has good water oxygen barrier effect, this embodiment can prevent that external steam and oxygen from invading to first organic layer 50 through making inorganic layer 70 cover the surface of first organic layer 50 to avoid external steam to pass through the pore wall that first organic layer 50 got into trompil 13 and increase the risk of crack propagation, thereby can greatly reduced thin-film transistor layer 20 inner metal wire's corrosion risk.
Referring to fig. 6, a fifth embodiment of the present application provides an OLED display panel 100. The fifth embodiment of the present application provides an OLED display panel 100 that is different from the third embodiment in that: the third sub-opening 133 extends through only the inorganic layer 70 and the first organic layer 50, and the second organic layer 60 extends from the first organic layer 50 near the hole wall of the third sub-opening 133 and covers the second step structure 21B.
The application also provides an electronic device, which can be any product or component with a display function, such as electronic paper, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like. The electronic device includes a housing and an OLED display panel disposed in the housing, where the OLED display panel may be the OLED display panel according to any one of the foregoing embodiments.
The OLED display panel and the electronic device provided in the embodiments of the present application are described in detail above, and specific examples are applied herein to illustrate the principles and embodiments of the present application, and the description of the embodiments above is only used to help understand the method and the core idea of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
Claims (10)
1. The utility model provides a OLED display panel, its has the bending region and is located the non-bending region of bending region one side, open the trompil in the OLED display panel, the trompil is located the bending region, its characterized in that, OLED display panel includes:
a substrate; and
the thin film transistor layer is arranged on one side of the substrate and comprises an insulating layer, and the insulating layer extends from the non-bending area to the bending area;
the opening comprises a first sub-opening, the first sub-opening is located in the insulating layer, and a first step structure is formed by the top surface of the insulating layer and the wall of the first sub-opening.
2. The OLED display panel of claim 1, wherein the insulating layer comprises a gate insulating layer and an interlayer dielectric layer, the gate insulating layer is located on one side of the interlayer dielectric layer close to the substrate, and the first sub-opening penetrates through the gate insulating layer and the interlayer dielectric layer;
the first sub-opening comprises a first hole and a second hole, the first hole is located in the gate insulating layer, the second hole is located in the interlayer dielectric layer, and the interlayer dielectric layer is close to the top surface of the second hole, the hole wall of the second hole, the gate insulating layer is close to the top surface of the first hole, and the hole wall of the first hole form the first step structure.
3. The OLED display panel of claim 2, further comprising a buffer layer disposed between the substrate and the thin-film-transistor layer, the buffer layer extending from the non-bent region to the bent region;
the opening further comprises a second sub opening communicated with the first sub opening, the second sub opening is located in the buffer layer, and the surface of the first step structure, the top surface of the buffer layer close to the second sub opening and the hole wall of the second sub opening form a second step structure.
4. The OLED display panel of claim 2 or 3, further comprising a first organic layer, a second organic layer, and an inorganic layer, the second organic layer being between the first organic layer and the inorganic layer, the first organic layer being on a side of the second organic layer proximate to the thin-film-transistor layer;
the opening further comprises a third sub-opening communicated with the first sub-opening, and the third sub-opening penetrates through the inorganic layer, the second organic layer and the first organic layer and exposes the top surface of the interlayer dielectric layer.
5. The OLED display panel of claim 3, further comprising a first organic layer covering the second step structure.
6. The OLED display panel of claim 5, wherein the first organic layer is disposed on a side of the thin-film transistor layer away from the substrate and extends from the non-bending region to the bending region;
the OLED display panel further comprises a second organic layer and an inorganic layer, the second organic layer is located between the first organic layer and the inorganic layer, the opening further comprises a third sub-opening communicated with the first sub-opening, the third sub-opening penetrates through the inorganic layer and the second organic layer, and the first organic layer is exposed to the far away of the surface of the first step structure.
7. The OLED display panel of claim 5, further comprising an inorganic layer overlying the first organic layer.
8. The OLED display panel of claim 7, wherein the inorganic layer is disposed on a side of the first organic layer away from the thin-film-transistor layer, the inorganic layer and the first organic layer both extending from the non-bent region to the bent region;
the OLED display panel further comprises a second organic layer, the second organic layer is located between the first organic layer and the inorganic layer, the opening further comprises a third sub-opening communicated with the first sub-opening, the third sub-opening penetrates through the second organic layer, and the inorganic layer extends from the hole wall of the third sub-opening and covers the first organic layer.
9. The OLED display panel of claim 3, further comprising a first organic layer, a second organic layer, and an inorganic layer, the second organic layer being between the first organic layer and the inorganic layer, the first organic layer being on a side of the second organic layer proximate to the thin-film-transistor layer;
the opening further comprises a third sub-opening communicated with the first sub-opening, the third sub-opening penetrates through the inorganic layer and the first organic layer, and the second organic layer extends from the first organic layer close to the hole wall of the third sub-opening and covers the second step structure.
10. An electronic device comprising a housing and an OLED display panel disposed in the housing, the OLED display panel being as claimed in any one of claims 1 to 9.
Priority Applications (1)
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| CN202111531928.9A CN114267707A (en) | 2021-12-14 | 2021-12-14 | OLED display panel and electronic equipment |
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| CN202111531928.9A CN114267707A (en) | 2021-12-14 | 2021-12-14 | OLED display panel and electronic equipment |
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| US20210359262A1 (en) * | 2019-05-27 | 2021-11-18 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd | Organic light-emitting diode display panel and manufacturing method thereof |
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| CN109659347A (en) * | 2018-12-19 | 2019-04-19 | 武汉华星光电半导体显示技术有限公司 | Flexible OLED display panel and display device |
| US20210359262A1 (en) * | 2019-05-27 | 2021-11-18 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd | Organic light-emitting diode display panel and manufacturing method thereof |
| CN110137186A (en) * | 2019-05-30 | 2019-08-16 | 京东方科技集团股份有限公司 | Flexible display substrates and its manufacturing method |
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