CN114267226B - Distribution cable terminal contains conductive impurity defect model - Google Patents
Distribution cable terminal contains conductive impurity defect model Download PDFInfo
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- CN114267226B CN114267226B CN202111604761.4A CN202111604761A CN114267226B CN 114267226 B CN114267226 B CN 114267226B CN 202111604761 A CN202111604761 A CN 202111604761A CN 114267226 B CN114267226 B CN 114267226B
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- 239000012535 impurity Substances 0.000 title claims abstract description 55
- 230000007547 defect Effects 0.000 title claims abstract description 34
- 238000009826 distribution Methods 0.000 title claims abstract description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052802 copper Inorganic materials 0.000 claims abstract description 29
- 239000010949 copper Substances 0.000 claims abstract description 29
- 238000007789 sealing Methods 0.000 claims abstract description 15
- 230000001681 protective effect Effects 0.000 claims description 6
- 239000004519 grease Substances 0.000 claims description 5
- 229920001296 polysiloxane Polymers 0.000 claims description 5
- 239000002923 metal particle Substances 0.000 claims description 3
- 238000004088 simulation Methods 0.000 abstract description 3
- 238000010276 construction Methods 0.000 abstract description 2
- 238000011160 research Methods 0.000 abstract description 2
- 230000035882 stress Effects 0.000 description 16
- 208000028659 discharge Diseases 0.000 description 7
- 230000005684 electric field Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000011859 microparticle Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 244000137852 Petrea volubilis Species 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Cable Accessories (AREA)
Abstract
The application discloses distribution cable terminal contains conductive impurity defect model, include: binding post, outer protection structure, cable structure and conductive impurity; the outer protection structure comprises: a terminal sleeve, a stress cone and a sealing sleeve; one end of the sealing sleeve is clamped with the wiring terminal, and the other end of the sealing sleeve is sleeved on the terminal sleeve; the stress cone is arranged in the terminal sleeve; the front end of cable construction passes the stress cone and cup joints in terminal sleeve pipe, and includes from outer to inlayer: the cable comprises a copper shielding layer, an outer semi-conductive layer, a main insulating layer and a cable core; one end of the wiring terminal is provided with a core groove; the cable core extends into the core groove and is connected with the wiring terminal; the front end of the main insulating layer extends out of the outer semi-conductive layer, so that a fault is formed between the main insulating layer and the front end of the outer semi-conductive layer; the conductive impurities are disposed on the fault. By arranging the outer semi-conductive layer and the main insulating layer to form a fault and arranging conductive impurities on the fault, a model of the cable terminal containing the defects of the conductive impurities can be formed, and the simulation research of the partial discharge characteristics is carried out.
Description
Technical Field
The application relates to the technical field of cable accessory test devices, in particular to a distribution cable terminal defect model containing conductive impurities.
Background
When installing a cable terminal, defects are easily caused on the cable terminal due to the fact that there may be misoperations in the manual operation. In the application of the cable, if the defect on the cable accessory is tiny, the defect is difficult to find in the withstand voltage test, and the cable accessory with the defect is rapidly deteriorated after being put into operation, so that the cable accessory is failed.
For this reason, investigation is required for possible defect situations of the cable accessories. The distribution cable terminal comprises conductive impurities which are one of possible defects, and the existing manufacturing model for researching the conductive impurities is mostly a flat plate sample model, namely, a silicon rubber flat plate simulation cable is used for experiments, so that the defects of the conductive impurities generated when the cable terminal is manufactured and installed are not fully reflected.
Disclosure of Invention
In view of this, the purpose of this application is to provide a distribution cable terminal and contain conductive impurity defect model for solve the problem that current cable terminal contains the research model of conductive impurity and can't react the cable terminal defect condition more comprehensively.
To achieve the above technical object, the present application provides a distribution cable terminal including a defect model of conductive impurities, including: binding post, outer protection structure, cable structure and conductive impurity;
the outer protective structure comprises: a terminal sleeve, a stress cone and a sealing sleeve;
one end of the sealing sleeve is clamped with the wiring terminal, and the other end of the sealing sleeve is sleeved on the terminal sleeve;
the stress cone is arranged in the terminal sleeve;
the front end of the cable structure penetrates through the stress cone to be sleeved in the terminal sleeve, and the front end of the cable structure comprises the following components from the outer layer to the inner layer: the cable comprises a cold shrink insulating sleeve, a copper shielding layer, an outer semi-conductive layer, a main insulating layer and a cable core;
a core groove is formed in one end of the wiring terminal;
the cable core extends into the core groove and is connected with the wiring terminal;
the front end of the copper shielding layer extends out of the cold shrink insulating sleeve;
the front end of the outer semiconductive layer extends out of the copper shielding layer;
the front end of the main insulating layer extends out of the outer semi-conductive layer, so that a fault is formed between the main insulating layer and the front end of the outer semi-conductive layer;
the conductive impurities are disposed on the fault.
Further, the conductive impurities are copper blocks.
Further, the conductive impurities are triangular blocks.
Further, metal particles are arranged on the circumferential wall surface of the front end of the copper shielding layer.
Further, silicone grease is smeared on the circumferential wall surface of the front end of the main insulating layer.
Further, a positioning mark is arranged on the main insulating layer;
the positioning mark is arranged at a fracture formed between the copper shielding layer and the outer semi-conductive layer;
the distance from the positioning mark to the front end of the cable core is equal to the distance from the rear end of the stress cone to the front end of the core groove.
Further, the front end of the outer semiconductive layer is provided with a chamfer.
Further, the front end of the main insulating layer is provided with a chamfer.
According to the technical scheme, the application provides a distribution cable terminal defect model containing conductive impurities, which comprises the following components: binding post, outer protection structure, cable structure and conductive impurity; the outer protective structure comprises: a terminal sleeve, a stress cone and a sealing sleeve; one end of the sealing sleeve is clamped with the wiring terminal, and the other end of the sealing sleeve is sleeved on the terminal sleeve; the stress cone is arranged in the terminal sleeve; the front end of the cable structure penetrates through the stress cone to be sleeved in the terminal sleeve, and the front end of the cable structure comprises the following components from the outer layer to the inner layer: the cable comprises a copper shielding layer, an outer semi-conductive layer, a main insulating layer and a cable core; a core groove is formed in one end of the wiring terminal; the cable core extends into the core groove and is connected with the wiring terminal; the front end of the main insulating layer extends out of the outer semi-conductive layer, so that a fault is formed between the main insulating layer and the front end of the outer semi-conductive layer; the conductive impurities are disposed on the fault. By arranging the outer semi-conductive layer and the main insulating layer to form a fault and arranging conductive impurities on the fault, a model of the cable terminal containing the conductive impurities can be formed.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive faculty for a person skilled in the art.
Fig. 1 is a schematic semi-sectional view of an overall structure of a defect model containing conductive impurities of a distribution cable terminal according to an embodiment of the present application;
fig. 2 is a graph of the relationship between the axial distance between the conductive impurity and the front end of the outer semiconductive layer in the defect model of the conductive impurity contained in the distribution cable terminal provided in the embodiment of the application and the electric field intensity.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the embodiments of the present application, are within the scope of the claimed invention.
In the description of the embodiments of the present application, it should be noted that, directions or positional relationships indicated by terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., are based on directions or positional relationships shown in the drawings, are merely for convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific direction, be configured and operated in the specific direction, and thus should not be construed as limiting the embodiments of the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the embodiments of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, interchangeably connected, integrally connected, mechanically connected, electrically connected, directly connected, indirectly connected through an intermediary, or in communication between two elements. The specific meaning of the terms in the embodiments of the present application will be understood by those of ordinary skill in the art in a specific context.
Referring to fig. 1 to 2, a distribution cable terminal provided in an embodiment of the present application includes a conductive impurity defect model, including: binding post 6, outer protection structure, cable construction and electrically conductive impurity 8. Wherein, outer protection structure includes: a terminal sleeve 9, a stress cone 7 and a sealing sleeve 10; one end of the sealing sleeve 10 is clamped with the wiring terminal 6, and the other end is sleeved on the terminal sleeve 9; the stress cone 7 is arranged in the terminal sleeve 9.
Specifically, the terminal sleeve 9 and the sealing sleeve 10 may be cold shrink sleeves, and umbrella skirts are arranged on the peripheral wall of the terminal sleeve 9, so that the creepage distance can be increased.
The front end of the cable structure passes through the stress cone 7 to be sleeved in the terminal sleeve 9, and comprises from the outer layer to the inner layer: the cold-shrink insulating sleeve 1, the copper shielding layer 2, the outer semiconductive layer 3, the main insulating layer 4 and the cable core 5; a core groove is formed at one end of the wiring terminal 6; the cable core 5 extends into the core groove and is connected with the wiring terminal 6; the front end of the copper shielding layer 2 extends out of the cold shrink insulating sleeve 1; the front end of the outer semiconductive layer 3 extends out of the copper shielding layer 2; the front end of the main insulating layer 4 extends out of the outer semiconductive layer 3, so that the front ends of the main insulating layer 4 and the outer semiconductive layer 3 form a fault; the conductive impurities 8 are disposed on the fault.
Specifically, referring to the graph of the axial distance of the conductive impurity 8 from the outer semiconductive layer 3 versus the electric field intensity of fig. 2, the present inventors found that, in application, the axial distance of the conductive impurity 8 from the outer semiconductive layer 3 is proportional to the degree of distortion of the battery, because there is a risk of discharge breakdown when the conductive impurity 8 is too far from the outer semiconductive layer 3. In order to reduce the possibility of breakdown and ensure experimental effect and safety, in the scheme, the conductive impurities 8 are arranged on the faults of the outer semiconductive layer 3, so that the partial discharge condition of the cable terminal containing the conductive impurities defect caused by forgetting to clean main insulation or incomplete cleaning can be simulated, parts of the outer protective structure are not damaged, and the simulation effect of the actual installation process is achieved as close as possible.
Further, in this embodiment, the conductive impurity 8 is a copper block, and has good conductivity. The conductive impurities 8 may be triangular blocks, and have tip portions, which facilitate discharge.
Further, the copper shield layer 2 is provided with metal particles on the front end circumferential wall surface.
Specifically, the conductive impurities 8 can be peeled from the copper shield layer 2, so that the copper conductive impurities 8 can be produced, and at the same time, metal microparticles can be formed on the periphery of the copper shield layer 2, thereby simulating the situation that the copper shield layer 2 is not thoroughly cleaned, and the surface of the copper shield layer is polluted by residual metal microparticles and the like.
Further, silicone grease is smeared on the circumferential wall surface of the front end of the main insulating layer, and the silicone grease has the characteristics of high temperature resistance, aging resistance, ozone resistance, hydrophobicity and the like, can protect the main insulating layer, and has the effects of water resistance, moisture resistance, vacuum shielding and the like.
Further, a positioning mark is arranged on the main insulating layer; the distance from the positioning mark to the front end of the cable core 5 is equal to the distance from the rear end of the stress cone 7 to the front end of the core groove.
In particular, the positioning mark may be provided at a break formed between the copper shield layer 2 and the outer semiconductive layer 3. Through the locating mark, can cup joint in outer protective structure after the cable structure, the locating mark aligns with the rear end of stress cone 7, also makes the fracture between copper shielding layer 2 and the outer semiconductive layer 3 align with the stress cone, can guarantee that stress cone 7 can accord with the overlap joint of requirement 3 on the outer semiconductive layer, alleviates outer semiconductive layer 3 fracture department electric field, avoids causing stress cone 7 dislocation defect.
Further, the front ends of the outer semiconductive layer 3 and the main insulating layer 4 are provided with chamfers, so that the defect of a fracture step formed by improper treatment can be prevented, the electric field concentration at the fracture can be caused by the step, an air gap defect is caused, and partial discharge is easy to generate.
The manufacturing flow of the distribution cable terminal defect model containing conductive impurities can be as follows: stripping the cold-shrink insulating sleeve 1, the copper shielding layer 2, the outer semiconductive layer 3 and the main insulating layer 4 of the cable according to the process requirement, and exposing the cable core 5; and when the outer semiconductive layer 3 and the main insulating layer 4 are peeled off, chamfering the front end fracture, polishing and smoothing by using fine sand paper, cleaning the surface of the main insulating layer 4 by using cleaning paper towards the direction of the outer semiconductive layer 3, and uniformly coating a small amount of silicone grease on the surface of the main insulating layer 4 after the main insulating layer 4 is dried. So as to make the surface smooth and transition, and prevent burrs and fracture steps; then, a triangular metal copper block, namely a conductive impurity 8 is placed on the main insulation 4 at the fracture of the outer semiconductive layer 3, and the conductive impurity 8 contacts the outer semiconductive layer 3 to form a defect that a current terminal contains the conductive impurity. And the front end fracture of the copper shielding layer 2 is aligned with the rear end of the stress cone 7 after the cable structure is arranged on the outer protective structure through the positioning mark. After the distribution cable terminal is installed to form a defect model containing conductive impurities, the conductive impurities 8 form conductive impurity defects in the middle of an interface between the cable main insulating layer 4 and the terminal sleeve 9, which is equivalent to introducing a floating potential at the interface, concentrating an electric field around the defect, generating partial discharge after exceeding a critical value, seriously impressing the operation of the cable terminal, achieving the effect of manufacturing the cable terminal close to the actual installation, ensuring the safety type and not damaging other defects, generating the partial discharge of 10-2000pC, and having a certain significance for researching the partial discharge characteristics of the conductive impurities contained in the cable terminal.
While the present invention has been described in detail with reference to the examples, it will be apparent to those skilled in the art that the foregoing examples can be modified or equivalents substituted for some of the features thereof, and any modifications, equivalents, improvements and substitutions made therein are intended to be within the spirit and principles of the present invention.
Claims (5)
1. A distribution cable termination including a conductive impurity defect model comprising: binding post, outer protection structure, cable structure and conductive impurity;
the outer protective structure comprises: a terminal sleeve, a stress cone and a sealing sleeve;
one end of the sealing sleeve is clamped with the wiring terminal, and the other end of the sealing sleeve is sleeved on the terminal sleeve;
the stress cone is arranged in the terminal sleeve;
the front end of the cable structure penetrates through the stress cone to be sleeved in the terminal sleeve, and the front end of the cable structure comprises the following components from the outer layer to the inner layer: the cable comprises a cold shrink insulating sleeve, a copper shielding layer, an outer semi-conductive layer, a main insulating layer and a cable core;
a core groove is formed in one end of the wiring terminal;
the cable core extends into the core groove and is connected with the wiring terminal;
the front end of the copper shielding layer extends out of the cold shrink insulating sleeve;
the front end of the outer semiconductive layer extends out of the copper shielding layer;
the front end of the main insulating layer extends out of the outer semi-conductive layer, so that a fault is formed between the main insulating layer and the front end of the outer semi-conductive layer;
the conductive impurities are arranged on the fault;
the conductive impurities are copper blocks;
the front end circumferential wall surface of the copper shielding layer is provided with metal particles;
the main insulating layer is provided with a positioning mark;
the positioning mark is arranged at a fracture formed between the copper shielding layer and the outer semi-conductive layer;
the distance from the positioning mark to the front end of the cable core is equal to the distance from the rear end of the stress cone to the front end of the core groove.
2. The distribution cable termination of claim 1 comprising a conductive impurity defect model, wherein the conductive impurities are triangular blocks.
3. The distribution cable termination of claim 1 including conductive impurity defect models wherein the front circumferential wall of the main insulating layer is coated with silicone grease.
4. The distribution cable termination conductive impurity-containing defect model of claim 1, wherein the front end of the outer semiconductive layer is provided with a chamfer.
5. The distribution cable termination conductive impurity-containing defect model of claim 1, wherein a front end of the main insulating layer is provided with a chamfer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111604761.4A CN114267226B (en) | 2021-12-24 | 2021-12-24 | Distribution cable terminal contains conductive impurity defect model |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111604761.4A CN114267226B (en) | 2021-12-24 | 2021-12-24 | Distribution cable terminal contains conductive impurity defect model |
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| Publication Number | Publication Date |
|---|---|
| CN114267226A CN114267226A (en) | 2022-04-01 |
| CN114267226B true CN114267226B (en) | 2024-02-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202111604761.4A Active CN114267226B (en) | 2021-12-24 | 2021-12-24 | Distribution cable terminal contains conductive impurity defect model |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1526755A (en) * | 2003-03-06 | 2004-09-08 | 株式会社藤仓 | Rubber composition with high dielectric constant and electric cable member |
| CN103630805A (en) * | 2013-11-06 | 2014-03-12 | 国家电网公司 | Partial discharge model for conductive particles on insulating surface of 10kV cable intermediate joint |
| CN107817430A (en) * | 2017-12-06 | 2018-03-20 | 广西电网有限责任公司电力科学研究院 | A kind of method that cable local discharge defect is observed by transparent terminal |
| CN112505504A (en) * | 2020-11-27 | 2021-03-16 | 广东电网有限责任公司江门供电局 | Method for manufacturing main insulation layer cavity defect model of distribution cable body |
| CN112697551A (en) * | 2020-12-04 | 2021-04-23 | 广东电网有限责任公司江门供电局 | Method for manufacturing tangential tool mark defect of cable main insulation-stress cone edge surface |
-
2021
- 2021-12-24 CN CN202111604761.4A patent/CN114267226B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1526755A (en) * | 2003-03-06 | 2004-09-08 | 株式会社藤仓 | Rubber composition with high dielectric constant and electric cable member |
| CN103630805A (en) * | 2013-11-06 | 2014-03-12 | 国家电网公司 | Partial discharge model for conductive particles on insulating surface of 10kV cable intermediate joint |
| CN107817430A (en) * | 2017-12-06 | 2018-03-20 | 广西电网有限责任公司电力科学研究院 | A kind of method that cable local discharge defect is observed by transparent terminal |
| CN112505504A (en) * | 2020-11-27 | 2021-03-16 | 广东电网有限责任公司江门供电局 | Method for manufacturing main insulation layer cavity defect model of distribution cable body |
| CN112697551A (en) * | 2020-12-04 | 2021-04-23 | 广东电网有限责任公司江门供电局 | Method for manufacturing tangential tool mark defect of cable main insulation-stress cone edge surface |
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| CN114267226A (en) | 2022-04-01 |
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