CN114256393B - Infrared diode epitaxial structure, preparation method thereof and infrared diode - Google Patents

Infrared diode epitaxial structure, preparation method thereof and infrared diode Download PDF

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CN114256393B
CN114256393B CN202111469243.6A CN202111469243A CN114256393B CN 114256393 B CN114256393 B CN 114256393B CN 202111469243 A CN202111469243 A CN 202111469243A CN 114256393 B CN114256393 B CN 114256393B
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dbr mirrors
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CN114256393A (en
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孙威威
黄国栋
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body

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Abstract

The invention relates to a red light diode epitaxial structure, a preparation method thereof and a red light diode. The epitaxial structure comprises: the P-type semiconductor layer, the active layer and the N-type semiconductor layer are sequentially stacked. The P-type semiconductor layer includes: a p-type current spreading reflective layer. The p-type current spreading reflective layer includes: at least one set of DBR mirrors formed from alternating growth of AlGaAs and AlAs. According to the infrared diode epitaxial structure, the preparation method thereof and the infrared diode, the infrared quantum efficiency and the light-emitting brightness of the infrared diode epitaxial structure and the infrared diode can be effectively improved.

Description

Infrared diode epitaxial structure, preparation method thereof and infrared diode
Technical Field
The invention relates to the technical field of semiconductors, in particular to a red diode epitaxial structure, a preparation method thereof and a red diode.
Background
The light emitting diode (Light Emitting Diode, abbreviated as LED) display device has advantages of high resolution, high contrast, low power consumption, etc., and has been widely used in various industries such as advertising, sports, traffic, finance, communication, business, and performance. With the maturation of the LED preparation process and Micro-nano processing technology, the size of the LED is smaller and smaller, and the LED gradually reaches the micron-sized (Mini/Micro-LED).
At present, in a full-color display device formed by Micro-LEDs, compared with red light Micro-LEDs, blue light Micro-LEDs and green light Micro-LEDs and preparation processes thereof are mature. However, there is a large development space for the red light Micro-LED and the manufacturing process thereof, for example, the external quantum efficiency and the light-emitting brightness of the red light Micro-LED are low.
Therefore, how to improve the external quantum efficiency and the light output brightness of the red diode is a urgent problem to be solved.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an objective of the present application is to provide a red diode epitaxial structure, a preparation method thereof, and a red diode, which are aimed at solving the problem of how to improve the infrared quantum efficiency and the light-emitting brightness of the red diode epitaxial structure and the red diode.
The embodiment of the application provides a red diode epitaxial structure, which comprises a P-type semiconductor layer, an active layer and an N-type semiconductor layer which are sequentially stacked. The P-type semiconductor layer includes a P-type current spreading reflective layer. The p-type current spreading reflective layer comprises at least one group of DBR mirrors formed by alternately growing aluminum gallium arsenide and aluminum arsenide.
In the above-mentioned red diode epitaxial structure, the p-type current spreading reflective layer is located at one side of the active layer. Therefore, under the condition that the N-type semiconductor layer is used as the light emitting side of the infrared diode epitaxial structure, the p-type current expansion reflecting layer adopts at least one group of DBR reflecting mirrors formed by alternately growing aluminum gallium arsenide and aluminum arsenide, and light waves emitted by the active layer can be effectively reflected while current expansion is met, so that partial light waves emitted by the active layer are prevented from being lost from one side of the substrate, and the external quantum efficiency and the light emitting brightness of the infrared diode epitaxial structure are improved.
In addition, in the red diode epitaxial structure, the p-type current expansion reflecting layer has the functions of current expansion and light reflection, and the current expansion layer and the DBR layer are not required to be arranged in the red diode epitaxial structure respectively, so that the structure of the red diode epitaxial structure and the preparation process thereof are simplified.
Optionally, the p-type current spreading reflective layer comprises: a first set of DBR mirrors and a second set of DBR mirrors are arranged in a stack. Wherein the first set of DBR mirrors and the second set of DBR mirrors are respectively used for reflecting light waves with different center wavelengths; and/or the first set of DBR mirrors and the second set of DBR mirrors have different reflection bandwidths.
In the above-mentioned red diode epitaxial structure, the use of DBR mirrors of different groups in the p-type current spreading reflective layer can ensure that the light waves that can be reflected by the p-type current spreading reflective layer have a larger center wavelength range and/or ensure that the p-type current spreading reflective layer has a larger reflection bandwidth range.
Optionally, the first set of DBR mirrors comprises: x first laminated structures including laminated Al 0.4 Ga 0.6 As monolayers and AlAs monolayers. The second set of DBR mirrors comprises: y second laminated structures including laminated Al 0.45 Ga 0.55 As monolayerAnd AlAs monolayers. Wherein X and Y are each positive integers greater than or equal to 1.
Optionally, the value range of the sum of X and Y includes: 20-40.
Optionally, in the first set of DBR mirrors, al 0.4 Ga 0.6 The thickness of the As monolayer is As follows: 46.7 nm.+ -. 0.5nm. The thickness values of the AlAs single layer include: 53.5 nm.+ -. 0.5nm. Thus, the first set of DBR mirrors can be used to reflect wavelengths having a center wavelength of approximately 670nm, with a reflection bandwidth of approximately 40nm.
Optionally, in the second set of DBR mirrors, al 0.45 Ga 0.55 The thickness of the As monolayer is As follows: 43.9 nm.+ -. 0.5nm. The thickness values of the AlAs single layer include: 50.3 nm.+ -. 0.5nm. Thus, the second set of DBR mirrors can be used to reflect wavelengths having a center wavelength of approximately 630nm, with the second set of DBR mirrors having a reflection bandwidth of approximately 48nm.
Optionally, in the P-type current expansion reflecting layer, the range of the magnesium ion doping concentration includes: 1E18/cm 3 ～2E18/cm 3 。
Based on the same inventive concept, the embodiment of the application also provides a preparation method of the red diode epitaxial structure, which comprises the following steps.
A substrate is provided.
And stacking and growing a P-type semiconductor layer, an active layer and an N-type semiconductor layer on the substrate. The P-type semiconductor layer includes: a p-type current spreading reflective layer. Wherein the p-type current spreading reflective layer comprises at least one group of DBR mirrors formed by alternately growing aluminum gallium arsenide and aluminum arsenide.
The method for manufacturing the red diode epitaxial structure is used for manufacturing the red diode epitaxial structure in some embodiments. The technical effects achieved by the aforementioned red diode epitaxial structure can be achieved by the preparation method of the red diode epitaxial structure, and the description thereof will not be repeated here.
Optionally, a p-type current spreading reflective layer is grown on the substrate, comprising the steps of.
A first set of DBR mirrors is epitaxially grown on a substrate. The first set of DBR mirrors comprises: x first laminated knotsThe first laminated structure comprises laminated Al 0.4 Ga 0.6 As monolayers and AlAs monolayers.
A second set of DBR mirrors is epitaxially grown on the first set of DBR mirrors. The second set of DBR mirrors comprises: y second laminated structures including laminated Al 0.45 Ga 0.55 As monolayers and AlAs monolayers.
Wherein X and Y are each positive integers greater than or equal to 1.
Optionally, the dopant source of the p-type current spreading reflective layer comprises Cp2Mg.
Based on the same inventive concept, embodiments of the present application also provide a red diode including the red diode epitaxial structure described in some embodiments above, and a first electrode connected to the P-type semiconductor layer, and a second electrode connected to the N-type semiconductor layer. The technical effect achieved by the aforementioned epitaxial structure of the red diode can be achieved by the same red diode, and will not be described in detail herein.
Drawings
Fig. 1 is a schematic structural diagram of an epitaxial structure of a red light diode according to an embodiment;
FIG. 2 is a schematic diagram of a p-type current spreading reflective layer according to an embodiment;
FIG. 3 is a flowchart of a method for fabricating an epitaxial structure of a red light diode according to an embodiment;
fig. 4 is a schematic structural diagram of a red light diode according to an embodiment.
Reference numerals illustrate:
1-a substrate; a 2-P type semiconductor layer; a 21-p type barrier layer; a 22-p type ohmic contact layer;
a 23-p type current spreading reflective layer; 231-a first set of DBR mirrors;
232-a second set of DBR mirrors; a 24-p type confinement layer; a 25-p type waveguide layer;
3-an active layer; a 4-N type semiconductor layer; a 41-n type waveguide layer; a 42-n type confinement layer;
a 43-n type transition layer; a 44-n type window layer; 5-a buffer layer; 6-a first electrode; 7-a second electrode;
m1-a first stack structure; m2-a second first stack structure;
MX-X first laminate structure; n1-a first second stack structure;
n2-a second stack structure; NY-Y second stack structure;
D1-Al in the first group DBR mirror 0.4 Ga 0.6 The thickness of the As monolayer;
thickness of AlAs monolayer in the D2-first set DBR mirrors;
al in D3-second group DBR mirror 0.45 Ga 0.55 The thickness of the As monolayer;
thickness of AlAs monolayer in the D4-second set DBR mirrors.
Detailed Description
In order to facilitate an understanding of the present application, a more complete description of the present application will now be provided with reference to the relevant figures. Preferred embodiments of the present application are shown in the accompanying drawings. This application may, however, be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
The light emitting units in LED display devices are mostly Micro light emitting diodes (Micro-LEDs) or Mini light emitting diodes (Mini-LEDs). The Micro-LEDs range in size from 1 μm to 100 μm. The Mini-LED chip has a size of 50 μm-200 μm. The LED display device adopts Micro-LEDs or Mini-LEDs as the light emitting units, and has the advantages of high resolution, high contrast ratio, low power consumption and the like.
At present, in a full-color display device formed by Micro-LEDs, compared with red light Micro-LEDs, blue light Micro-LEDs and green light Micro-LEDs and preparation processes thereof are mature. However, there is a large development space for the red light Micro-LEDs and the manufacturing process thereof, for example, the light-emitting efficiency of the red light Micro-LEDs is low.
Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.
Referring to fig. 1, an embodiment of the present application provides a red diode epitaxial structure, which includes a substrate 1, and a P-type semiconductor layer 2, an active layer 3 and an N-type semiconductor layer 4 sequentially stacked on the substrate 1. The P-type semiconductor layer 2 includes a P-type current spreading reflective layer 23. Wherein the p-type current spreading reflective layer 23 comprises at least one group of DBR (Distributed Bragg Reflection) mirrors formed by alternately growing aluminum gallium arsenide and aluminum arsenide.
Here, the structures of the P-type semiconductor layer 2 and the N-type semiconductor layer 4 may be selected and set according to actual requirements.
By way of example, the P-type semiconductor layer 2 includes a P-type barrier layer 21, a P-type ohmic contact layer 22, a P-type current spreading reflective layer 23, a P-type confinement layer 24, and a P-type waveguide layer 25 epitaxially grown on the substrate 1 from bottom to top.
The N-type semiconductor layer 4 includes, as an example, an N-type waveguide layer 41, an N-type confinement layer 42, an N-type transition layer 43, and an N-type window layer 44, which are sequentially stacked in a direction away from the active layer 3.
Further, optionally, a buffer layer 5 is provided between the substrate 1 and the P-type semiconductor layer 2. That is, the P-type semiconductor layer 2 is epitaxially grown on the buffer layer 5, so as to facilitate improving the quality of epitaxial growth of the P-type semiconductor layer 2.
In this embodiment, the red diode epitaxial structure is used for preparing a red diode adopting a flip-chip structure, that is: the n-type window layer 44 is the light-emitting side of the red diode epitaxial structure.
Alternatively, the substrate 1 is a gallium arsenide substrate, for example an n-type GaAs substrate doped with silicon. But is not limited thereto. Other semiconductor substrates employing group V elements are also suitable.
Alternatively, based on an n-type GaAs substrate, the buffer layer 5 is a p-GaAs buffer layer, and the p-type barrier layer 21 is p-Ga x1 In 1-x1 P corrosion stop layer, P-type ohmic contact layer 22 is P-GaAs ohmic contactThe p-type current spreading reflective layer 23 is a p-DBR (AlGaAs/AlAs) current spreading reflective layer, and the p-type confinement layer 24 is p-Al x2 In 1-x2 P-confinement layer, P-type waveguide layer 25 is P- (Al) x3 Ga 1-x3 ) 0.5 In 0.5 P waveguide layer, active layer 3 is a quantum well, n-type waveguide layer 41 is n- (Al) x4 Ga 1-x4 ) 0.5 In 0.5 P-waveguide layer, n-type confinement layer 42 of n-Al x5 In 1-x5 P-confinement layer, n-type transition layer 43 is n- (Al) x6 Ga 1-x6 ) y In 1--y The P transition layer and the n-type window layer 44 are n-GaP window layers. But is not limited thereto.
Here, x1, x2, x3, x4, x5, x6, and y may be selected according to actual requirements, which is not specifically limited in the embodiment of the present application.
In addition, the buffer layer 5, the P-type barrier layer 21, the P-type ohmic contact layer 22, the P-type current spreading reflective layer 23, and the P-type confinement layer 24 are P-type material layers, and Mg ion doping may be performed. The N-type confinement layer 42, the N-type transition layer 43, and the N-type window layer 44 are N-type material layers, and Si doping may be performed.
In the embodiment of the application, the P-type material layer is firstly epitaxially grown on the n-type GaAs substrate. Then, the P-type current spreading reflective layer 23 can be located between the active layer 3 and the substrate 1 by growing the P-type material layer to the N-type material layer. In this way, when the n-type window layer 44 is used as the light emitting side of the red diode epitaxial structure, the P-type current expansion reflecting layer 23 adopts at least one group of DBR reflecting mirrors formed by alternately growing aluminum gallium arsenide and aluminum arsenide, so that the light waves emitted from the active layer 3 can be effectively reflected while the current expansion is satisfied, thereby avoiding that part of the light waves emitted from the active layer 3 are lost from one side of the P-type material layer, and being beneficial to improving the external quantum efficiency and the light emitting brightness of the red diode epitaxial structure.
In addition, in the embodiment of the present application, the p-type current expansion reflective layer 23 combines the functions of current expansion and light reflection, and does not need to set a current expansion layer and a DBR layer in the red diode epitaxial structure, which is also beneficial to simplifying the structure of the red diode epitaxial structure and the preparation process thereof.
In some embodiments, referring to fig. 2, the p-type current spreading reflective layer 23 includes: the first group 231 and the second group 232 of DBR mirrors are stacked in a direction away from the substrate 1. Wherein the first set 231 and the second set 232 of DBR mirrors are respectively configured to reflect light waves having different center wavelengths; and/or the first set 231 and the second set 232 of DBR mirrors have different reflection bandwidths.
In the above-mentioned red diode epitaxial structure, the different sets of DBR mirrors in the p-type current spreading reflective layer 23 can ensure that the light waves reflected by the p-type current spreading reflective layer 23 have a larger central wavelength range and/or ensure that the p-type current spreading reflective layer 23 has a larger reflection bandwidth range.
Optionally, with continued reference to fig. 2, the first set of DBR mirrors 231 includes: x first laminated structures (M1, M2, … … MX). The first laminated structure comprises laminated Al 0.4 Ga 0.6 As monolayers and AlAs monolayers; namely, al 0.4 Ga 0.6 The As monolayer and AlAs monolayer are stacked to form 1 first stacked structure.
Optionally, with continued reference to fig. 2, the second set of DBR mirrors 232 includes: y second laminated structures (N1, N2, … … NY). The second laminated structure comprises laminated Al 0.45 Ga 0.55 As monolayers and AlAs monolayers; namely, al 0.45 Ga 0.55 The As monolayer and AlAs monolayer are laminated to form 1 second laminated structure.
In the above embodiments, X and Y are each positive integers greater than or equal to 1. X and Y can be selected and set according to actual requirements.
Optionally, the value range of the sum of X and Y includes: 20-40. For example, X+Y has a value of 20, 25, 30, 35 or 40. But is not limited thereto.
In one example, the sum of X and Y has a value in the range of 20 to 25. For example, the value of X+Y is 21, 22, 23, 24 or 25. In this way, it is advantageous to ensure that the p-type current spreading reflective layer 23 has a large light reflectance.
It will be appreciated that Al in the first set of DBR mirrors 231 0.4 Ga 0.6 Thicknesses of As monolayer and AlAs monolayer and the firstAl in two sets of DBR mirrors 232 0.45 Ga 0.55 The thicknesses of the As monolayer and the AlAs monolayer can be determined according to the wavelength of the light wave to be reflected and Al 0.4 Ga 0.6 As、Al 0.45 Ga 0.55 The refractive index of As and AlAs materials is selectively determined.
Alternatively, referring to FIG. 2, in the first set of DBR mirrors 231, al 0.4 Ga 0.6 The thickness D1 values for the As monolayers include: 46.7nm + -5 nm; for example 46.7nm. The thickness D2 of the AlAs monolayer comprises: 53.5nm + -5 nm; for example 53.5nm. Thus, the first group of DBR mirrors 231 can be used to reflect wavelengths having a center wavelength of approximately 670nm, with the reflection bandwidth of the first group of DBR mirrors 231 being approximately 40nm. But is not limited thereto.
Alternatively, referring to FIG. 2, in the second set of DBR mirrors 232, al 0.45 Ga 0.55 The thickness D3 of the As monolayer comprises: 43.9 nm.+ -. 5nm; for example 43.9nm. The thickness D4 of the AlAs monolayer comprises: 50.3nm + -5 nm; for example 50.3nm. Thus, the second set of DBR mirrors 232 can be configured to reflect wavelengths having a center wavelength of approximately 630nm, with the second set of DBR mirrors 232 having a reflection bandwidth of approximately 48nm. But is not limited thereto.
Optionally, in the p-type current spreading reflective layer 23, the range of the magnesium ion doping concentration includes: 1E18/cm 3 ～2E18/cm 3 . For example, the magnesium ion doping concentration has the following value: 1E18/cm 3 、1.2E18/cm 3 、1.5E18/cm 3 、1.8E18/cm 3 Or 2E18/cm 3 . But is not limited thereto.
In this embodiment of the present application, the magnesium ion doping concentration in the p-type current expansion reflective layer 23 is set as described above, so that not only can the degradation of the crystal quality of the p-type current expansion reflective layer 23 caused by the introduction of interstitial atoms due to the overlarge magnesium ion doping concentration be avoided, but also the reduction of the current expansion capability of the p-type current expansion reflective layer 23 due to the overlarge magnesium ion doping concentration can be avoided.
Further, optionally, the doping source used in the formation of the p-type current spreading reflective layer 23 is Cp2Mg.
Based on the same inventive concept, referring to fig. 3, the embodiment of the present application further provides a method for manufacturing an epitaxial structure of a red diode, which includes the following steps.
S100, providing a substrate.
Alternatively, the substrate is a gallium arsenide substrate, for example an n-type GaAs substrate doped with silicon. But is not limited thereto. Other semiconductor substrates employing group V elements are also suitable.
And S200, stacking and growing a P-type semiconductor layer, an active layer and an N-type semiconductor layer on the substrate. The P-type semiconductor layer includes a P-type current spreading reflective layer. The p-type current spreading reflective layer comprises at least one group of DBR mirrors formed by alternately growing aluminum gallium arsenide and aluminum arsenide.
Optionally, the P-type semiconductor layer includes a P-type barrier layer, a P-type ohmic contact layer, a P-type current spreading reflective layer, a P-type confinement layer, and a P-type waveguide layer epitaxially grown on the substrate from bottom to top. A buffer layer is provided between the substrate and the P-type semiconductor layer.
Optionally, the N-type semiconductor layer includes an N-type waveguide layer, an N-type confinement layer, an N-type transition layer, and an N-type window layer that are sequentially stacked in a direction away from the active layer.
Optionally, the buffer layer is a p-GaAs buffer layer based on an n-type GaAs substrate, and the p-type barrier layer is p-Ga x1 In 1-x1 The P-type ohmic contact layer is a P-GaAs ohmic contact layer, the P-type current expansion reflecting layer is a P-DBR (AlGaAs/AlAs) current expansion reflecting layer, and the P-type limiting layer is P-Al x2 In 1-x2 A P limiting layer, a P-type waveguide layer of P- (Al) x3 Ga 1-x3 ) 0.5 In 0.5 A P waveguide layer, an active layer is a quantum well, and an n-type waveguide layer is n- (Al) x4 Ga 1-x4 ) 0.5 In 0.5 A P waveguide layer, an n-type limiting layer of n-Al x5 In 1-x5 A P limiting layer, an n-type transition layer of n- (Al) x6 Ga 1-x6 ) y In 1--y The P transition layer and the n-type window layer are n-GaP window layers. But is not limited thereto.
The x1, x2, x3, x4, x5, x6, and y may be selected according to practical requirements, which is not specifically limited in the embodiment of the present application.
The buffer layer, the p-type barrier layer, the p-type ohmic contact layer, the p-type current expansion reflection layer, the p-type limiting layer, the p-type waveguide layer, the active layer, the n-type waveguide layer, the n-type limiting layer, the n-type transition layer and the n-type window layer can be formed by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) technology.
The buffer layer, the P-type blocking layer, the P-type ohmic contact layer, the P-type current expansion reflecting layer and the P-type limiting layer are P-type material layers, and Mg ion doping can be performed. The N-type limiting layer, the N-type transition layer and the N-type window layer are N-type material layers, and Si doping can be performed.
The method for manufacturing the red diode epitaxial structure is used for manufacturing the red diode epitaxial structure in some embodiments. The technical effects achieved by the aforementioned red diode epitaxial structure can be achieved by the preparation method of the red diode epitaxial structure, and the description thereof will not be repeated here.
In some embodiments, the structure of the p-type current spreading reflective layer is as shown in fig. 2, and the p-type current spreading reflective layer is grown on the substrate, comprising the following steps.
First, a first set of DBR mirrors are epitaxially grown on a substrate. The first set of DBR mirrors are grown, for example, on the surface of the p-type ohmic contact layer. The first set of DBR mirrors comprises: x first laminated structures (M1, M2, … … MX). The first laminated structure comprises laminated Al 0.4 Ga 0.6 As monolayers and AlAs monolayers.
Next, a second set of DBR mirrors is epitaxially grown on the first set of DBR mirror surfaces. The second set of DBR mirrors comprises: y second laminated structures (N1, N2, … … NY). The second laminated structure comprises laminated Al 0.45 Ga 0.55 As monolayers and AlAs monolayers.
In the above steps, X and Y are positive integers of 1 or more, respectively. X and Y can be selected and set according to actual requirements. Optionally, the value range of the sum of X and Y includes: 20-40. For example, X+Y has a value of 20, 25, 30, 35 or 40. But is not limited thereto.
Further, optionally, in the first set of DBR mirrors, al 0.4 Ga 0.6 The thickness of the As monolayer is As follows: 46.7nm + -5 nm; for example 46.7nm. The thickness values of the AlAs single layer include: 53.5nm + -5 nm; for example 53.5nm. Thus, the first set of DBR mirrors can be used to reflect wavelengths having a center wavelength of approximately 670nm, with a reflection bandwidth of approximately 40nm. But is not limited thereto.
Optionally, in the second set of DBR mirrors, al 0.45 Ga 0.55 The thickness of the As monolayer is As follows: 43.9 nm.+ -. 5nm; for example 43.9nm. The thickness of the AlAs monolayer is valued to include: 50.3nm + -5 nm; for example 50.3nm. Thus, the second set of DBR mirrors can be used to reflect wavelengths having a center wavelength of approximately 630nm, with the second set of DBR mirrors having a reflection bandwidth of approximately 48nm. But is not limited thereto.
In the above-described red diode epitaxial structure, the first group of DBR mirrors and the second group of DBR mirrors may be respectively used to reflect light waves having different center wavelengths. Also, the first set of DBR mirrors and the second set of DBR mirrors can have different reflection bandwidths. Thus, with the DBR mirrors of different groups in the p-type current spreading reflective layer, it is possible to ensure that the light waves that can be reflected by the p-type current spreading reflective layer have a large center wavelength range, and that the p-type current spreading reflective layer has a large reflection bandwidth range.
In some embodiments, the range of values of the magnesium ion doping concentration in the p-type current spreading reflective layer includes: 1E18/cm 3 ～2E18/cm 3 . For example, the magnesium ion doping concentration has the following value: 1E18/cm 3 、1.2E18/cm 3 、1.5E18/cm 3 、1.8E18/cm 3 Or 2E18/cm 3 . But is not limited thereto.
Optionally, the doping source used in the growth process of the p-type current spreading reflective layer is Cp2Mg.
In order to more clearly illustrate the method for preparing the p-type current spreading reflective layer in the embodiment of the present application, the p-type current spreading reflective layer shown in fig. 2 is described in detail below.
First, a first set of DBR mirrors 231 is deposited on the surface of the p-type ohmic contact layer using an MOCVD process.
By way of example only, the present invention is directed to a method of,depositing high refractive index Al in a first laminated structure M1 on the surface of the p-type ohmic contact layer 0.4 Ga 0.6 An As monolayer is then deposited, followed by a low refractive index AlAs monolayer in the first stack M1.
Here, al is deposited 0.4 Ga 0.6 The deposition temperature was between 690℃and 720℃and the vacuum chamber pressure was maintained at 50mbar for As monolayers. Al (Al) 0.4 Ga 0.6 The deposition process of the As monolayer is represented by: arsine is used as a V-group semiconductor source, hydrogen is used as carrier gas, cp2Mg is used as a doping source, TMGa and TMAl with a certain proportion are introduced into the III-group semiconductor source, and deposition time is controlled to grow Al with the thickness of 46.7nm 0.4 Ga 0.6 An As monolayer. Wherein the mass ratio of the V group semiconductor source to the III group semiconductor source is 40-60.
Changing the group III semiconductor source, for example, closing TMGa and maintaining TMAL flux while depositing an AlAs monolayer; other process conditions, such as a V semiconductor source, cp2Mg as a dopant source, etc., remain unchanged, growing an AlAs monolayer with a thickness of 53.5nm.
Thus, the first growth of Al 0.4 Ga 0.6 A first laminated structure M1 composed of an As single layer and an AlAs single layer.
Thereafter, the second first laminated structure M2 and the third first laminated structure M3 are sequentially grown on the surface of the first laminated structure M1 by the same process as above until the X-th first laminated structure MX to obtain the first group DBR mirror 231. Thus, the first group of DBR mirrors 231 can reflect light waves having a center wavelength of about 670nm, and the reflection bandwidth of the first group of DBR mirrors 231 is about 40nm.
Then, a second set of DBR mirrors 232 are deposited on the surface of the first set of DBR mirrors 231 using a MOCVD process.
Illustratively, a high refractive index Al is deposited on the surface of the first set of DBR mirrors 231 in the first and second stacked structures N1 0.45 Ga 0.55 An As monolayer is then deposited, followed by a low refractive index AlAs monolayer in the first second stack structure N1.
Here, al is deposited 0.45 Ga 0.55 The deposition temperature was between 690℃and 720℃and the vacuum chamber pressure was maintained at 50mbar for As monolayers. Al (Al) 0.45 Ga 0.55 The deposition process of the As monolayer is represented by: continuing to take arsine as a V-group semiconductor source, taking hydrogen as carrier gas and Cp2Mg as a doping source; at the same time, changing the III semiconductor source, for example, opening the TMGa input in the closed state and adjusting the TMGa input amount, and maintaining the original TMAL input amount to grow Al with the thickness of 43.9nm 0.45 Ga 0.55 An As monolayer.
Changing the III semiconductor source, for example closing the TMGa and maintaining the original TMAL flux when depositing AlAs monolayer; other process conditions, such as a V semiconductor source, cp2Mg as a dopant source, etc., remain unchanged, growing an AlAs monolayer with a thickness of 50.3nm.
Thus, the first growth of Al 0.45 Ga 0.55 And a second laminated structure N1 consisting of an As single layer and an AlAs single layer.
Then, the second laminated structure N2 and the third second laminated structure N3 are sequentially grown on the surface of the first second laminated structure N1 by the same process as above until the Y-th second laminated structure NY to obtain the second group DBR mirror 232. Thus, the second set of DBR mirrors 232 can reflect light having a center wavelength of about 630nm, and the second set of DBR mirrors 232 can have a reflection bandwidth of about 48nm.
In addition, in the above-mentioned red diode epitaxial structure, other epitaxial layers except the p-type current expansion reflective layer may be prepared according to actual requirements, which is not limited in the embodiment of the present application. In addition, after the preparation of the above-mentioned red diode epitaxial structure, it is necessary to perform an epitaxial structure-related inspection. The qualified red diode epitaxial structure can be used for preparing red diodes.
Based on the same inventive concept, referring to fig. 4, an embodiment of the present application further provides a red light diode, including: the red diode epitaxial structure described in some of the foregoing embodiments, and the first electrode 6 connected to the P-type semiconductor layer 2, and the second electrode 7 connected to the N-type semiconductor layer 4. The technical effect achieved by the aforementioned epitaxial structure of the red diode can be achieved by the same red diode, and will not be described in detail herein.
Alternatively, the first electrode 6 is connected to the P-type current spreading reflective layer 23 in the P-type semiconductor layer 2.
Optionally, the second electrode 7 is connected to an N-type window layer 44 in the N-type semiconductor layer 4.
The specific materials of the first electrode 6 and the second electrode 7 are not limited in the embodiment of the disclosure, and may be selected according to actual requirements. For example, the first electrode 6 and the second electrode 7 are metal electrodes. For example, the first electrode 6 and the second electrode 7 have a single-layer structure or a stacked-layer structure.
It is to be understood that the invention is not limited in its application to the examples described above, but is capable of modification and variation in light of the above teachings by those skilled in the art, and that all such modifications and variations are intended to be included within the scope of the appended claims.

Claims (10)

1. A red light diode epitaxial structure comprising: the P-type semiconductor layer, the active layer and the N-type semiconductor layer are sequentially stacked; the P-type semiconductor layer is characterized by comprising: the p-type current expansion reflecting layer is positioned at two sides of the p-type current expansion reflecting layer along the stacking direction and is respectively contacted with the p-type ohmic contact layer and the p-type limiting layer;
wherein the p-type current spreading reflective layer comprises: a first group of DBR mirrors and a second group of DBR mirrors stacked in a direction close to the active layer;
the center wavelength of the light waves which can be reflected by the first group of DBR reflectors is 670nm;
the center wavelength of the light waves which can be reflected by the second group of DBR reflectors is 630nm;
in the p-type current expansion reflecting layer, the range of the magnesium ion doping concentration comprises the following values: 1E18/cm 3 ～2E18/cm 3 。
2. A red diode epitaxial structure according to claim 1 wherein said first set of DBR mirrors and said second set of DBR mirrors are each configured to reflect light waves having different center wavelengths;
and/or the first set of DBR mirrors and the second set of DBR mirrors have different reflection bandwidths.
3. The red diode epitaxial structure of claim 2,
the first set of DBR mirrors comprises: x first laminated structures including laminated Al 0.4 Ga 0.6 As monolayers and AlAs monolayers;
the second set of DBR mirrors comprises: y second laminated structures including laminated Al 0.45 Ga 0.55 As monolayers and AlAs monolayers;
wherein X and Y are each positive integers greater than or equal to 1.
4. A red diode epitaxial structure according to claim 3 wherein in said first set of DBR mirrors, said Al 0.4 Ga 0.6 The thickness of the As monolayer is As follows: 46.7nm + -0.5 nm; the thickness value of the AlAs single layer comprises the following steps: 53.5 nm.+ -. 0.5nm.
5. A red diode epitaxial structure according to claim 3 wherein in said second set of DBR mirrors, said Al 0.45 Ga 0.55 The thickness of the As monolayer is As follows: 43.9nm + -0.5 nm; the thickness value of the AlAs single layer comprises the following steps: 50.3 nm.+ -. 0.5nm.
6. The red diode epitaxial structure of claim 2,
the reflection bandwidth of the first set of DBR mirrors comprises 40nm;
the reflection bandwidth of the second set of DBR mirrors comprises 48nm.
7. The preparation method of the infrared diode epitaxial structure is characterized by comprising the following steps of:
providing a substrate;
a P-type semiconductor layer, an active layer and an N-type semiconductor layer are stacked and grown on the substrate; the P-type semiconductor layer comprises a P-type current expansion reflecting layer, and a P-type ohmic contact layer and a P-type limiting layer which are positioned on two sides of the P-type current expansion reflecting layer along the lamination direction and are respectively contacted with the P-type current expansion reflecting layer; wherein the p-type current spreading reflective layer comprises: a first group of DBR mirrors and a second group of DBR mirrors stacked in a direction close to the active layer; the center wavelength of the light waves which can be reflected by the first group of DBR reflectors is 670nm; the center wavelength of the light waves which can be reflected by the second group of DBR reflectors is 630nm;
the preparation method further comprises the following steps: doping the p-type current expansion reflecting layer to enable the range of the magnesium ion doping concentration in the p-type current expansion reflecting layer to comprise: 1E18/cm 3 ～2E18/cm 3 。
8. The method of manufacturing a red light diode epitaxial structure of claim 7,
growing the p-type current spreading reflective layer on the substrate, comprising: epitaxially growing a first set of DBR mirrors on the substrate, the first set of DBR mirrors comprising: x first laminated structures; the first laminated structure comprises laminated Al 0.4 Ga 0.6 As monolayers and AlAs monolayers;
epitaxially growing a second set of DBR mirrors on the first set of DBR mirrors, the second set of DBR mirrors including: y second stacked structures; the second laminated structure comprises laminated Al 0.45 Ga 0.55 As monolayers and AlAs monolayers;
wherein X and Y are each positive integers greater than or equal to 1.
9. The method of claim 7 or 8, wherein the dopant source of the p-type current spreading reflective layer comprises Cp2Mg.
10. A red light diode, comprising: the red diode epitaxial structure of any one of claims 1-6, and a first electrode connected to the P-type semiconductor layer, and a second electrode connected to the N-type semiconductor layer.
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JP2001036135A (en) * 1999-07-21 2001-02-09 Showa Denko Kk AlGaInP LIGHT-EMITTING DIODE
EP1302791A1 (en) * 2001-09-27 2003-04-16 Interuniversitair Microelektronica Centrum Vzw Distributed Bragg Reflector comprising a GaP layer, and a semiconductor resonant cavity device comprising such a DBR
CN1433087A (en) * 2002-01-15 2003-07-30 株式会社东芝 Semiconductor light-emitting element and its making process
CN104868033A (en) * 2015-03-31 2015-08-26 山西南烨立碁光电有限公司 Novel structure capable of improving luminance of light-emitting diode
CN208738288U (en) * 2018-07-10 2019-04-12 南昌凯迅光电有限公司 A kind of epitaxial structure improving green-yellow light LED internal quantum efficiency
CN113644173A (en) * 2021-07-12 2021-11-12 天津三安光电有限公司 Semiconductor epitaxial structure, preparation method thereof and LED chip

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001036135A (en) * 1999-07-21 2001-02-09 Showa Denko Kk AlGaInP LIGHT-EMITTING DIODE
EP1302791A1 (en) * 2001-09-27 2003-04-16 Interuniversitair Microelektronica Centrum Vzw Distributed Bragg Reflector comprising a GaP layer, and a semiconductor resonant cavity device comprising such a DBR
CN1433087A (en) * 2002-01-15 2003-07-30 株式会社东芝 Semiconductor light-emitting element and its making process
CN104868033A (en) * 2015-03-31 2015-08-26 山西南烨立碁光电有限公司 Novel structure capable of improving luminance of light-emitting diode
CN208738288U (en) * 2018-07-10 2019-04-12 南昌凯迅光电有限公司 A kind of epitaxial structure improving green-yellow light LED internal quantum efficiency
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