CN114245508A - Power amplifier, microwave source and microwave heating device - Google Patents
Power amplifier, microwave source and microwave heating device Download PDFInfo
- Publication number
- CN114245508A CN114245508A CN202010942687.6A CN202010942687A CN114245508A CN 114245508 A CN114245508 A CN 114245508A CN 202010942687 A CN202010942687 A CN 202010942687A CN 114245508 A CN114245508 A CN 114245508A
- Authority
- CN
- China
- Prior art keywords
- microwave
- power amplifier
- unit
- matching circuit
- filtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 20
- 238000001914 filtration Methods 0.000 claims abstract description 65
- 230000005855 radiation Effects 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 239000003990 capacitor Substances 0.000 claims description 18
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- 230000003321 amplification Effects 0.000 claims description 4
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000009768 microwave sintering Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/66—Circuits
- H05B6/68—Circuits for monitoring or control
- H05B6/686—Circuits comprising a signal generator and power amplifier, e.g. using solid state oscillators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The application discloses a power amplifier, a microwave source and a microwave heating device. The power amplifier includes an input matching circuit, an amplifying circuit, and an output matching circuit. The input matching circuit is used for realizing impedance matching. The amplifying circuit is connected with the input matching circuit and used for amplifying the input signal. The output matching circuit is connected with the amplifying circuit and used for realizing impedance matching. The output matching circuit comprises a switch unit and a filtering part; the first end of the switch unit is connected with the amplifying circuit, the second end of the switch unit receives the input voltage and is connected with the filtering part, and the filtering part is used for being connected with the microwave radiation unit. Therefore, the switch unit of the output matching circuit receives the input voltage, so that the input voltage can supply power to the output matching circuit, the energy loss of the microwave signal in the output matching circuit is reduced, the efficiency of the power amplifier is improved, and the efficiency of the semiconductor microwave source with the power amplifier is improved. In addition, the filtering part can reduce the interference of the microwave signal.
Description
Technical Field
The present application relates to the field of microwave devices, and more particularly, to a power amplifier, a microwave source, and a microwave heating apparatus.
Background
With the development of semiconductor microwave technology, semiconductor microwave sources can be applied to microwave heating devices. In the related art, the semiconductor microwave source includes a microwave generator and a power amplifier, and the microwave generated by the microwave generator passes through the power amplifier to output a high-power microwave. The power amplifier may employ laterally-diffused metal-oxide semiconductor (LDMOS) or gallium nitride (GaN) transistors. However, the efficiency of the semiconductor microwave source is low due to the power consumption of the power amplifier.
Disclosure of Invention
The embodiment of the application provides a power amplifier, a microwave source and a microwave heating device.
The power amplifier of the embodiment of the present application, the power amplifier is used for a microwave heating device, the power amplifier includes:
an input matching circuit for implementing impedance matching;
the amplifying circuit is connected with the input matching circuit and is used for amplifying an input signal; and
and the output matching circuit is connected with the amplifying circuit board and is used for realizing impedance matching. The matching circuit comprises a switch unit and a filtering part, the filtering part is connected with the input voltage part, the first end of the switch unit is connected with the amplifying circuit, the second end of the switch unit receives the input voltage and is connected with the filtering part, and the filtering part is used for being connected with the microwave radiation unit.
In the embodiment of the application, power amplifier's filtering part includes first filtering unit and second filtering unit, the first end of first filtering unit is connected the second end of switch element, the second end of first filtering unit is connected the first end of microwave radiation unit, the first end of second filtering unit is connected the second end of switch element, the second end of second filtering unit is connected the second end of microwave radiation unit.
In some embodiments, the number of the first filtering units and the number of the second filtering units are two, one of the second filtering units is connected between the first ends of the two first filtering units, and the other one of the second filtering units is connected between one of the first filtering units and the microwave radiation unit.
In some embodiments, the first filtering unit includes a first inductor and a first capacitor connected in parallel, and the second filtering unit includes a second inductor and a second capacitor connected in parallel.
In some embodiments, the output matching circuit includes a third capacitor connected between the second terminal of the switch and the filtering section.
In some embodiments, the output matching circuit includes a third inductor connected between the second terminal of the switch and the input voltage.
In some embodiments, the amplification circuit comprises a laterally diffused metal oxide semiconductor or gallium nitride transistor.
In some embodiments, the switching unit includes a MOS transistor, a gate of the MOS transistor is connected to the amplifying circuit, a source of the MOS transistor receives the input voltage, and a drain of the MOS transistor is connected to the microwave radiating unit.
The microwave source of the embodiment of the application comprises:
a power amplifier as described in any above; and
and the microwave generator is connected with the input matching circuit.
The microwave heating device of the embodiment of the present application includes:
a cavity; and
the microwave radiation source is arranged in the cavity.
As described above, the microwave source according to the embodiment of the present invention employs the power amplifier described above. In the power amplifier, the switch unit of the output matching circuit receives the input voltage, so that the input voltage can supply power to the output matching circuit, the energy loss of microwave signals in the output matching circuit is reduced, the efficiency of the power amplifier is improved, and the efficiency of a semiconductor microwave source with the power amplifier is improved. In addition, the filtering part can reduce the interference of the microwave signal.
The household appliance of the embodiment of the application comprises the microwave source.
Therefore, the household appliance adopts the microwave source, and utilizes the power amplifier to enable the switch unit of the output matching circuit to receive the input voltage, so that the input voltage can supply power for the output matching circuit, the energy loss of microwave signals in the output matching circuit is reduced, the efficiency of the power amplifier is improved, and the efficiency of the semiconductor microwave source with the power amplifier is improved. In addition, the filtering part can reduce the interference of the microwave signal.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
The above and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a functional block diagram of a power amplifier according to an embodiment of the present application;
FIG. 2 is a circuit schematic of an output matching circuit according to an embodiment of the present application;
fig. 3 is a schematic diagram of a power amplifier energy structure according to an embodiment of the present application;
FIG. 4 is another circuit schematic of an output matching circuit of an embodiment of the present application;
FIG. 5 is a functional block diagram of a microwave source according to an embodiment of the present application;
FIG. 6 is a functional block diagram of a microwave heating device according to an embodiment of the present application;
fig. 7 is a schematic structural view of a microwave heating apparatus according to an embodiment of the present application.
Description of the main element symbols:
the microwave heating device comprises a power amplifier 100, a microwave source 200, a microwave generator 201, a microwave heating device 300 and a cavity 301;
an output matching circuit 10, a switching unit 11, a filter unit 12, a first filter unit 121, a second filter unit 122, an amplification circuit 20, and an input matching circuit 30.
Detailed Description
Reference will now be made in detail to embodiments of the present application, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative and are only for the purpose of explaining the present application and are not to be construed as limiting the present application.
In the description of the present application, it is to be understood that the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
The following disclosure provides many different embodiments or examples for implementing different features of the application. To simplify the disclosure of the present application, the components and settings of a specific example are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or reference letters in the various examples, which have been repeated for purposes of brevity and clarity and do not in themselves dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
Referring to fig. 1, the present embodiment provides a power amplifier 100 for a microwave heating apparatus 300. The power amplifier 100 includes an input matching circuit 30, an amplifying circuit 20, and an output matching circuit 10.
The input terminal of the input matching circuit 30 is used for connecting a microwave signal (input signal) and for realizing impedance matching. The amplifier circuit 20 is connected to the input matching circuit 30, and the amplifier circuit 20 amplifies an input signal. The output matching circuit 10 is connected to the amplifying circuit 20, and the output matching circuit 10 is used for realizing impedance matching.
The impedance matching is a technology used on a transmission line to achieve the purpose that all high-frequency microwave signals can be transmitted to a load point, and signals are hardly reflected back to a source point, so that the energy efficiency is improved. The signal source internal resistance is equal to the characteristic impedance of the connected transmission line in magnitude and phase, or the characteristic impedance of the transmission line is equal to the characteristic impedance of the connected load impedance in magnitude and phase, which means that the input end or the output end of the transmission line is in an impedance matching state, i.e. impedance matching.
In some embodiments, the input matching circuit 30 may adopt a circuit structure such as a T-type matching circuit, an L-type matching circuit, a transformer, or a pi-type matching circuit, and the specific design of the input matching circuit 30 is not discussed here, and the impedance matching may be implemented.
Referring to fig. 2, in some embodiments, the output matching circuit 10 includes a switch unit 11 and a filter 12, and the filter 12 is connected to an input voltage. The first end of the switch unit 11 is connected to the amplifying circuit 20, the second end of the switch unit 11 receives the input voltage and is connected to the filtering portion 12, and the filtering portion 12 is used for being connected to the microwave radiation unit R to filter the signal leading to the microwave radiation unit R.
Therefore, the switch unit 11 of the output matching circuit 10 receives the input voltage, so that the input voltage can supply power to the output matching circuit 10, the energy loss of the microwave signal in the output matching circuit 10 is reduced, and the efficiency of the power amplifier 100 is improved.
Specifically, please refer to fig. 3. There is a formula for the energy structure of the power amplifier 100:
P2＝P4+P3-P1。
where P1 is the input power; p2 is dc power; p3 is output power; p4 is power loss;
the output power P3 is P5+ P6, and the efficiency η of the power amplifier is P5/P2.
Wherein P5 is the fundamental power; p6 is harmonic power; η is the power amplifier efficiency.
The power loss P4 and harmonic power P6 in the above expression are related to the characteristics of the output matching circuit 10, and the theoretical maximum leakage efficiency (η ═ 100%) can be obtained if the output matching circuit 10 is an ideal lossless low-pass filter.
Therefore, the output matching circuit 10 of the power amplifier 100 can adopt a classic low-pass filter model elliptic filter, which can reduce the power loss P4 and the harmonic energy P6 to the maximum extent, thereby improving the efficiency of the power amplifier 100. The low-pass filter is an electronic filter device that allows a signal lower than the cutoff frequency to pass through but does not allow a signal higher than the cutoff frequency to pass through. An elliptic filter is a model of a low-pass filter.
Referring to fig. 2, in the present embodiment, the filtering portion 12 includes a first filtering unit 121 and a second filtering unit 122, a first end of the first filtering unit 121 is connected to a second end of the switch unit 11, a second end of the first filtering unit 121 is connected to a first end of the microwave radiation unit R, a first end of the second filtering unit 122 is connected to a second end of the switch unit 11, and a second end of the second filtering unit 122 is connected to a second end of the microwave radiation unit R.
Therefore, in the process that the microwave signal passes through the filtering part 12, interference received by the microwave signal is reduced through the filtering of the first filtering unit 121 and the second filtering unit 122, the power loss P4 and the harmonic energy P6 are reduced, and the working efficiency of the power amplifier 100 is improved.
The microwave radiation unit R may be equivalent to a load having a certain resistance value, and the microwave radiation unit R may have a resistance value of 50 ohms, 75 ohms, 100 ohms, or the like.
In one example, the microwave radiation unit R may employ 50 ohms. It should be noted that the resistance value is only an illustrative example, and does not limit the present application, and other components in the circuit need to adopt corresponding parameters according to the difference of the resistance value of the microwave radiation unit R.
In the embodiment of the present application, the number of the first filter units 121 and the second filter units 122 is two, one second filter unit 122 is connected between the first ends of the two first filter units 121, and the other second filter unit 122 is connected between one first filter unit 121 and the microwave radiation unit R.
Specifically, the total number of the first filtering unit 121 and the second filtering unit 122 is the order of the filter of the output matching circuit 10. The order of the filter is the number of times of filtering harmonic waves by the filter, and the higher the order is, the better the filtering effect is.
It is understood that in some embodiments, the order of the filter of the output matching circuit 10 may be 2, 3, 4, etc. The output matching circuit 10 of the present embodiment uses a 4-order filter, and the output matching circuit 10 includes two first filtering units 121 and two second filtering units 122. Therefore, the microwave is filtered, the interference on the microwave is reduced, the energy loss is reduced, and the working efficiency of the circuit is improved.
Referring to fig. 4, in the present embodiment, the first filter unit 121 includes a first inductor L1 and a first capacitor C1 connected in parallel, and the second filter unit 122 includes a second inductor L2 and a second capacitor C2 connected in parallel.
It is understood that one first filtering unit 121 or one second filtering unit 122 is formed by connecting a capacitor and an inductor in parallel. When the input voltage rises, the parallel capacitors charge, and part of energy can be stored in the capacitors. When the input voltage is reduced, the voltage at the two ends of the capacitor discharges exponentially, and the stored energy can be released. The capacitor discharges to the microwave radiation unit R through the filter circuit, and the output voltage obtained on the microwave radiation unit R is smoother, so that the wave smoothing effect is achieved.
When the input voltage is increased, the current in the inductor is increased, so that the inductor stores partial magnetic field energy, and when the current is reduced, the energy is released again, so that the current of the microwave radiation unit R is smoothed, and therefore, the inductor also plays a role of smoothing waves.
Therefore, the capacitors and the inductors of the first filtering unit 121 and the second filtering unit 122 are combined to achieve a better filtering effect.
With continued reference to fig. 4, in the embodiment of the present application, the output matching circuit 10 includes a third inductor L3 connected between the second terminal of the switching unit 11 and the input voltage.
Since the inductance has a small impedance to dc and a large impedance to ac, a good filtering effect can be obtained and the dc loss is small, the third inductance L3 is connected in series with the filter unit 12. By utilizing the characteristic that the current of the energy storage element third inductor L3 can not change suddenly, the waveform of the output current can be smoother.
By using the capacitance characteristic, the third inductor L3 can realize the functions of energy storage and energy supply and filtering the signal ac component, so as to obtain a smoother dc signal.
In the present embodiment, the output matching circuit 10 includes a third capacitor C3 connected between the second terminal of the switching unit 11 and the filter section 12.
The third capacitor C3 is disposed between the second terminal of the switch unit 11 and the filter unit 12, and the third capacitor C3 functions to block the direct current of the input voltage and prevent the current of the filter unit 12 from being directly grounded.
It is understood that, in other embodiments, the third capacitor C3 may be configured with a rectifier diode or only a rectifier diode may be disposed between the second end of the switch unit 11 and the filter part 12, and may also serve to block direct current and prevent current from being grounded.
In the embodiment of the present application, the amplification circuit 20 includes a laterally diffused metal oxide semiconductor or a gallium nitride transistor.
The power amplifier 100 fabricated by using a laterally diffused metal oxide semiconductor or gallium nitride transistor can satisfy the requirements of high output power and gate-source breakdown voltage. In addition, the power amplifier maximum frequency of the ldmos power amplifier 100 is relatively small compared to the gan transistor power amplifier 100.
It is understood that in other embodiments, the power amplifier 100 may be made of metal or oxide effect transistors such as silicon bipolar transistors, gallium arsenide transistors, heterojunction bipolar transistors, and high electron mobility transistors.
In addition, the amplifying circuit 20 may amplify the input signal using a common emitter amplifying circuit, a voltage-dividing bias common emitter amplifying circuit, a single tube power amplifier, an OTL power amplifier, or the like.
In the embodiment of the present application, the switching unit 11 includes a MOS transistor, a gate of the MOS transistor is connected to the amplifying circuit 20, a source of the MOS transistor receives the input voltage, and a drain of the MOS transistor is connected to the microwave radiating unit R.
It will be appreciated that the switching unit 11 may also be a field effect transistor or a transistor. In this embodiment, the switching unit 11 is a MOS transistor, a gate of the MOS transistor is connected to the amplifying circuit 20, a source of the MOS transistor receives an input voltage, and a drain of the MOS transistor is connected to the microwave radiation unit R. The control terminal of the switching unit 11 is also the gate of the MOS transistor, the control signal of the switching unit 11 is provided by the amplifying circuit 20, and the output voltage can be adjusted by the control signal of the switching unit 11.
The output voltage is adjusted, namely, according to the actual requirement of the load of the microwave radiation unit R, the current output voltage is too high, the output voltage can be reduced through adjusting the control signal, and similarly, the current output voltage is too low, and the output voltage can be increased through adjusting the control signal. Thus, the application range of the power amplifier 100 is increased.
Referring to fig. 5, the present embodiment further provides a microwave source 200, where the microwave source 200 includes the power amplifier 100 and the microwave generator 201 according to any of the above embodiments, and the microwave generator 201 is connected to the input matching circuit 30.
Specifically, referring to fig. 6, the microwave source 200 generates a microwave signal for the microwave generator 201, and the microwave signal is amplified and filtered by the power amplifier 100 and then reaches the microwave radiation unit R.
The microwave generator 200 may be a semiconductor microwave device or an electric vacuum microwave device, and in one embodiment, the microwave generator may be a solid state source microwave generator, which is one of semiconductor microwave devices that use all solid state semiconductors to excite microwave energy, and the semiconductor microwave device is matched with the power amplifier 100, so that the microwave frequency, phase and power can be fed back and adjusted in real time during use, and the service life is long, and the cost is saved.
The semiconductor microwave device is a diode or a transistor which is made of materials such as germanium, silicon, III-V compound semiconductor and the like and works in a microwave band. The electro-vacuum device is a device which utilizes electrons to move in vacuum to complete energy conversion, and is a transistor or an electron tube.
Referring to fig. 6 and 7, the present embodiment further provides a microwave heating apparatus 300, where the microwave heating apparatus 300 includes the above microwave source 200 and a cavity 301, and the microwave source 200 is disposed in the cavity 301.
Specifically, the microwave heating device 300 may be a kitchen appliance such as a microwave oven, a microwave heater, or other devices such as a microwave dryer, a microwave sintering oven, or the like.
Next, the operation principle of the microwave heating device 300 of the present embodiment will be described.
In the microwave heating apparatus 300 according to the embodiment of the present application, the microwave source 200 generates a microwave signal by the microwave generator 201, and the microwave signal is amplified and filtered by the power amplifier 100, specifically, in the power amplifier 100, the switch unit 11 of the output matching circuit 10 receives an input voltage, so that the input voltage can supply power to the output matching circuit 10, reduce energy loss of the microwave signal in the output matching circuit 10, improve the efficiency of the power amplifier 100, improve the efficiency of the semiconductor microwave source having the power amplifier 100, and reduce interference to the microwave signal by the filtering unit 12. The microwave signal acts on the object to be heated after the above processes, and the object is heated in the cavity 301.
In the description herein, references to the description of the terms "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present application, "plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
Although embodiments of the present application have been shown and described above, it is to be understood that the above embodiments are exemplary and not to be construed as limiting the present application, and that changes, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present application.
Claims (10)
1. A power amplifier for a microwave heating apparatus, comprising:
an input matching circuit for implementing impedance matching;
the amplifying circuit is connected with the input matching circuit and is used for amplifying the input signal; and
the output matching circuit is connected with the amplifying circuit board and used for realizing impedance matching, the matching circuit comprises a switch unit and a filtering part connected with the input voltage part, the first end of the switch unit is connected with the amplifying circuit, the second end of the switch unit receives the input voltage and is connected with the filtering part, and the filtering part is used for being connected with the microwave radiation unit.
2. The power amplifier of claim 1, wherein the filter part comprises a first filter unit and a second filter unit, a first end of the first filter unit is connected to the second end of the switch unit, a second end of the first filter unit is connected to the first end of the microwave radiation unit, a first end of the second filter unit is connected to the second end of the switch unit, and a second end of the second filter unit is connected to the second end of the microwave radiation unit.
3. The power amplifier according to claim 2, wherein the number of the first filtering units and the second filtering units is two, one of the second filtering units is connected between the first ends of the two first filtering units, and the other one of the second filtering units is connected between one of the first filtering units and the microwave radiating unit.
4. The power amplifier of claim 2, wherein the first filtering unit comprises a first inductor and a first capacitor connected in parallel, and the second filtering unit comprises a second inductor and a second capacitor connected in parallel.
5. The power amplifier of claim 1, wherein the output matching circuit comprises a third capacitor connected between the second terminal of the switch and the filtering section.
6. The power amplifier of claim 1, wherein the output matching circuit comprises a third inductor connected between the second terminal of the switch and the input voltage.
7. The power amplifier of claim 1, wherein the amplification circuit comprises a laterally diffused metal oxide semiconductor or gallium nitride transistor.
8. The power amplifier of claim 1, wherein the switching unit comprises a MOS transistor, a gate of the MOS transistor is connected to the amplifying circuit, a source of the MOS transistor receives the input voltage, and a drain of the MOS transistor is connected to the microwave radiating unit.
9. A microwave source, comprising:
the power amplifier of any one of claims 1-8; and
and the microwave generator is connected with the input matching circuit.
10. A microwave heating apparatus, comprising:
a cavity; and
the microwave source of claim 9, the source of microwave radiation being disposed in the cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010942687.6A CN114245508A (en) | 2020-09-09 | 2020-09-09 | Power amplifier, microwave source and microwave heating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010942687.6A CN114245508A (en) | 2020-09-09 | 2020-09-09 | Power amplifier, microwave source and microwave heating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114245508A true CN114245508A (en) | 2022-03-25 |
Family
ID=80742739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010942687.6A Pending CN114245508A (en) | 2020-09-09 | 2020-09-09 | Power amplifier, microwave source and microwave heating device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114245508A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1349681A (en) * | 1997-07-03 | 2002-05-15 | 艾利森公司 | Impedance matching circuit for power amplifier |
| JP2009301747A (en) * | 2008-06-10 | 2009-12-24 | Panasonic Corp | Large high frequency power device |
| CN102332886A (en) * | 2011-08-16 | 2012-01-25 | 雷良军 | Multi-frequency-band power amplifier |
| CN104836533A (en) * | 2015-05-25 | 2015-08-12 | 杭州电子科技大学 | Power amplifier and implementation method thereof |
| CN105492831A (en) * | 2013-08-29 | 2016-04-13 | 飞思卡尔半导体公司 | Integrated solid state microwave power generation modules |
| CN106712738A (en) * | 2015-11-13 | 2017-05-24 | 谐振公司 | Method of designing an acoustic microwave filter according to frequency response requirements |
-
2020
- 2020-09-09 CN CN202010942687.6A patent/CN114245508A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1349681A (en) * | 1997-07-03 | 2002-05-15 | 艾利森公司 | Impedance matching circuit for power amplifier |
| JP2009301747A (en) * | 2008-06-10 | 2009-12-24 | Panasonic Corp | Large high frequency power device |
| CN102332886A (en) * | 2011-08-16 | 2012-01-25 | 雷良军 | Multi-frequency-band power amplifier |
| CN105492831A (en) * | 2013-08-29 | 2016-04-13 | 飞思卡尔半导体公司 | Integrated solid state microwave power generation modules |
| CN104836533A (en) * | 2015-05-25 | 2015-08-12 | 杭州电子科技大学 | Power amplifier and implementation method thereof |
| CN106712738A (en) * | 2015-11-13 | 2017-05-24 | 谐振公司 | Method of designing an acoustic microwave filter according to frequency response requirements |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7202734B1 (en) | Electronically tuned power amplifier | |
| US4717884A (en) | High efficiency RF power amplifier | |
| Choi et al. | 13.56 MHz 1.3 kW resonant converter with GaN FET for wireless power transfer | |
| Ozen et al. | Continuous class-E power amplifier modes | |
| EP1603231B1 (en) | RF generator with voltage regulator | |
| JP4808814B2 (en) | Switching inverter and converter for power conversion | |
| EP2321901B1 (en) | Hybrid class amplifier | |
| JP5223008B2 (en) | High frequency power amplifier | |
| EP2690779A2 (en) | Wideband AFT power amplifier systems with frequency-based output transformer impedance balancing | |
| CN103023448A (en) | RF device with compensatory resonator matching topology | |
| JP2013524626A (en) | Class characteristic variable amplifier | |
| Long et al. | A 13 W current mode class D high efficiency 1 GHz power amplifier | |
| Kizilbey | Design of class-E GaN HEMT power amplifier using elliptic low pass matching network with 86% efficiency | |
| CN114245508A (en) | Power amplifier, microwave source and microwave heating device | |
| Raab | Broadband class-E power amplifier for HF and VHF | |
| KR102604619B1 (en) | Circuit and method for driving an electric load | |
| Zhang et al. | 1 kW 13.56 MHz class-D− 1 power stage with 90% drain efficiency | |
| Aflaki et al. | Enhanced architecture for microwave current-mode class-D amplifiers applied to the design of an S-band GaN-based power amplifier | |
| Probst et al. | Load modulation with an adaptive matching network based on MEMS for efficiency enhancement of an inverse class-F power amplifier | |
| EP4118745A1 (en) | Apparatuses and methods involving amplification circuit with push-pull wave-shaping operation | |
| Khan et al. | Design of a broadband current mode class-D power amplifier with harmonic suppression | |
| Hwang et al. | High-efficiency power oscillator using harmonic-tuned matching network | |
| CN215344402U (en) | Radio frequency power supply circuit and circuit board | |
| Porsan et al. | A modified class D resonance inverter for operating in load independent condition | |
| Lepine et al. | A load modulated high efficiency power amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |