CN114242912B - Light emitting device and display panel - Google Patents
Light emitting device and display panel Download PDFInfo
- Publication number
- CN114242912B CN114242912B CN202111462365.2A CN202111462365A CN114242912B CN 114242912 B CN114242912 B CN 114242912B CN 202111462365 A CN202111462365 A CN 202111462365A CN 114242912 B CN114242912 B CN 114242912B
- Authority
- CN
- China
- Prior art keywords
- conductive layer
- layer
- light
- emitting device
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 238000002834 transmittance Methods 0.000 claims description 6
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 5
- 229910001252 Pd alloy Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical group [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 claims description 4
- 238000005452 bending Methods 0.000 description 25
- 239000002131 composite material Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 11
- 230000008859 change Effects 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000002070 nanowire Substances 0.000 description 6
- 230000009471 action Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The application discloses a light emitting device and a display panel, the light emitting device includes: a first electrode, a light emitting layer, and a second electrode that are stacked, the first electrode including: the first conductive layer is arranged on the light-emitting layer; the second conductive layer is arranged on one side of the first conductive layer, which is away from the light-emitting layer; the third conductive layer is arranged on one side of the second conductive layer, which is opposite to the first conductive layer, the second conductive layer and the third conductive layer contain the same metal, and at least one of the first conductive layer and the third conductive layer is a nano metal wire film layer. The light-emitting device and the display panel have stable service performance.
Description
Technical Field
The application relates to the technical field of display, in particular to a light-emitting device and a display panel.
Background
Along with the updating of electronic products, in order to bring better use experience, display screens of various electronic equipment terminals, such as mobile phones, tablet computers and the like, become larger and larger, so that the outline size of the electronic equipment is correspondingly increased, and the problem of inconvenient carrying and storage can be brought.
The development of flexible display technologies such as Organic LIGHT EMITTING Diode (OLED) has made portable large screens possible. In the daily use process of the flexible display screen, the problems of anode layer deformation or fracture and the like are very easy to occur due to large-angle bending or repeated bending, and the service performance and service life of the screen are seriously influenced.
Disclosure of Invention
The embodiment of the application provides a light-emitting device and a display panel, and the light-emitting device and the display panel are stable in service performance.
In a first aspect, an embodiment of the present application provides a light emitting device, including: a first electrode, a light emitting layer, and a second electrode that are stacked, the first electrode including: the first conductive layer is arranged on the light-emitting layer; the second conductive layer is arranged on one side of the first conductive layer, which is away from the light-emitting layer; the third conductive layer is arranged on one side of the second conductive layer, which is opposite to the first conductive layer, the second conductive layer and the third conductive layer contain the same metal, and at least one of the first conductive layer and the third conductive layer is a nano metal wire film layer.
According to the foregoing embodiment of the first aspect of the present application, the difference in vickers hardness between the first conductive layer and the second conductive layer is less than 20HV, and the difference in vickers hardness between the third conductive layer and the second conductive layer is also less than 20HV.
According to the foregoing embodiment of the first aspect of the present application, at least one of the first conductive layer, the second conductive layer and the third conductive layer has a vickers hardness of less than 30HV.
According to any of the foregoing embodiments of the first aspect of the present application, the first conductive layer and the third conductive layer are both nano silver wire film layers, and the second conductive layer is a silver metal layer or a silver alloy layer.
According to any of the foregoing embodiments of the first aspect of the present application, the second conductive layer is a silver palladium alloy layer.
According to any of the foregoing embodiments of the first aspect of the present application, the mass doping ratio of palladium in the second conductive layer is 0.05% to 2%.
According to any of the foregoing embodiments of the first aspect of the present application, the first conductive layer has a light transmittance of 90% or more.
According to any of the foregoing embodiments of the first aspect of the present application, the resistivity of the first conductive layer, the second conductive layer, and the third conductive layer is less than 1.80×10 -8 Ω/m.
According to any of the foregoing embodiments of the first aspect of the application, fang Zuxiao of the first electrode is at 0.6 Ω/sq.
According to any of the foregoing embodiments of the first aspect of the present application, the first electrode is provided as an anode, the first electrode having a reflectance of greater than 80%.
According to any of the foregoing embodiments of the first aspect of the present application, the first conductive layer and the third conductive layer have a thickness of 8nm to 12nm; the thickness of the second conductive layer is 50 nm-120 nm.
In a second aspect, an embodiment of the present application provides a display panel including: an array substrate; the light-emitting device layer is arranged on the array substrate, the light-emitting device layer comprises a plurality of light-emitting devices which are arranged in an array, and at least part of the plurality of light-emitting devices are the light-emitting devices in any embodiment.
According to the light-emitting device and the display panel provided by the embodiment of the application, the first electrode of the light-emitting device comprises the first conductive layer, the second conductive layer and the third conductive layer which are stacked, and the first conductive layer, the second conductive layer and the third conductive layer contain the same metal, so that the bonding strength and the ohmic contact performance between different conductive layers can be improved; at least one of the first conductive layer and the third conductive layer is a nano metal wire film layer, the nano metal wire in the nano metal wire film layer has good flexibility and conductivity, the bending performance of the first electrode can be improved, the resistance of the first electrode is prevented from being increased in the use process, and the service performance and the service life of the light emitting device and the display panel are improved.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading the following detailed description of non-limiting embodiments, taken in conjunction with the accompanying drawings, in which like reference characters designate the same or similar features, and in which the figures are not to scale.
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the application;
FIG. 2 is a schematic diagram of another structure of a display panel according to an embodiment of the application;
fig. 3 is a schematic structural diagram of a light emitting device according to an embodiment of the present application;
Fig. 4 is a schematic diagram of the sheet resistance change of the composite film layer corresponding to the first experimental example and the first comparative example.
Reference numerals illustrate:
10-an array substrate;
11-a substrate;
12-a drive device layer;
a 20-light emitting device layer;
21-a light emitting device;
210-a first electrode; 211-a first conductive layer; 212-a second conductive layer; 213-a third conductive layer;
220-a light emitting layer;
230-a second electrode.
Detailed Description
Features and exemplary embodiments of various aspects of the present application will be described in detail below, and in order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be described in further detail below with reference to the accompanying drawings and the detailed embodiments. It should be understood that the specific embodiments described herein are merely configured to illustrate the application and are not configured to limit the application. It will be apparent to one skilled in the art that the present application may be practiced without some of these specific details. The following description of the embodiments is merely intended to provide a better understanding of the application by showing examples of the application.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
It will be understood that when a layer, an area, or a structure is described as being "on" or "over" another layer, another area, it can be referred to as being directly on the other layer, another area, or another layer or area can be included between the layer and the other layer, another area. And if the component is turned over, that layer, one region, will be "under" or "beneath" the other layer, another region.
With the development of flexible display technology, a portable large screen capable of being bent and rolled or folded becomes possible. At present, a top-light-emitting anode of a flexible display screen mostly adopts a composite film layer containing indium tin oxide, but because indium tin oxide materials are brittle, the overall flexibility of the composite film layer is poor, the anode layer is extremely easy to deform or break after the flexible display screen is bent at a large angle or a plurality of times, and the bending resistance of the anode layer is high, so that the service performance and the service life of the screen are seriously influenced.
In order to solve the above problems, embodiments of the present application provide a light emitting device and a display panel, and the embodiments will be described below with reference to fig. 1 to 4.
In a first aspect, embodiments of the present application provide a display panel, which may be an OLED display panel.
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the application; fig. 2 is a schematic diagram of another structure of a display panel according to an embodiment of the application.
Referring to fig. 1 and 2, the display panel provided in the embodiment of the application includes an array substrate 10 and a light emitting device layer 20, wherein the light emitting device layer 20 is disposed on the array substrate 10, and the light emitting device layer 20 includes a plurality of light emitting devices 21 arranged in an array.
In some embodiments, the array substrate 10 may include a substrate 11 and a driving device layer 12, the driving device layer 12 including a plurality of pixel circuits, the driving device layer 12 for driving the light emitting devices 21 to emit light.
Alternatively, the substrate 11 may be a Polyimide (PI) material or a substrate 11 made of a material containing PI, so that the substrate 11 is bendable.
Alternatively, the array substrate 10 may be a flexible array substrate 10 capable of bending and curling, and the display panel is a flexible display panel capable of bending and curling.
In some alternative embodiments, the light emitting device 21 layer 20 may include red light emitting devices 21, green light emitting devices 21, and blue light emitting devices 21 arranged in an array.
Fig. 3 is a schematic structural diagram of a light emitting device 21 according to an embodiment of the present application. In a second aspect, the embodiment of the present application provides a light emitting device 21, where the light emitting device 21 may be used in a display panel, and the light emitting device 21 may be a red light emitting device 21, a green light emitting device 21, or a blue light emitting device 21.
Referring to fig. 3, a light emitting device 21 according to an embodiment of the present application includes a first electrode 210, a light emitting layer 220, and a second electrode 230 stacked. When the light emitting device 21 is powered on, the first electrode 210 is an anode, and the second electrode 230 is a cathode. When a voltage is applied to the first electrode 210 and the second electrode 230, holes and electrons are injected from the first electrode 210 and the second electrode 230, respectively, under the action of an electric field, and transferred to the light emitting layer 220, and when the two meet at the light emitting layer 220, excitons are generated by combination, and light emitting molecules are excited to generate visible light.
In some embodiments, the first electrode 210 is a composite film structure. The first electrode 210 may include a first conductive layer 211, a second conductive layer 212, and a third conductive layer 213 stacked together, where the first conductive layer 211 is disposed on the light emitting layer 220, the second conductive layer 212 is disposed on a side of the first conductive layer 211 facing away from the light emitting layer 220, and the third conductive layer 213 is disposed on a side of the second conductive layer 212 facing away from the first conductive layer 211. The first conductive layer 211 and the third conductive layer 213 can protect the second conductive layer 212 and facilitate the process control adjustment of the film.
Optionally, the first conductive layer 211, the second conductive layer 212 and the third conductive layer 213 comprise the same metal, and at least one of the first conductive layer 211 and the third conductive layer 213 is a nanowire film.
According to the light emitting device 21 provided by the embodiment of the application, the first conductive layer 211, the second conductive layer 212 and the third conductive layer 213 comprise the same metal, so that the bonding strength and the ohmic contact performance between different conductive layers can be improved, at least one of the first conductive layer 211 and the third conductive layer 213 is a nano metal wire film, the nano metal wire in the nano metal wire film has good flexibility and conductivity, the bending performance of the first electrode 210 can be improved, the resistance increase of the first electrode 210 in the use process is reduced, the resistance increase of the first electrode 210 in the use process is even avoided, and the service performance and the service life of the light emitting device 21 and the display panel are improved.
In some alternative embodiments, the light emitting device 21 provided in the embodiments of the present application has a difference between the vickers hardness of the first conductive layer 211 and the vickers hardness of the second conductive layer 212 of less than 20HV, and a difference between the vickers hardness of the third conductive layer 213 and the vickers hardness of the second conductive layer 212 of less than 20HV.
The smaller the vickers hardness of the conductive layer, the better the flexibility and bending performance, and the smaller the change in resistance after bending.
According to the light-emitting device 21 provided by the embodiment of the application, the difference of the vickers hardness between any two adjacent conductive layers of the first electrode 210 is set to be smaller than 20HV, so that the difference of bending properties of the two adjacent conductive layers of the first electrode 210 is smaller, the deformation of each conductive layer is not great when the first electrode 210 is bent, and each conductive layer can be well attached all the time, so that the problem that each conductive layer of the first electrode 210 is deformed and separated after the display panel is bent at a large angle or after the first electrode 210 is bent for many times can be avoided, the resistance change of the first electrode 210 in the preset bending frequency range is not too large, the service performance of the light-emitting device 21 and the display panel is stable, and the service life of the light-emitting device 21 and the display panel can be further ensured.
Optionally, the difference between the vickers hardness of the first conductive layer 211 and the vickers hardness of the second conductive layer 212 and the difference between the vickers hardness of the third conductive layer 213 and the vickers hardness of the second conductive layer 212 may be smaller than 10HV, so that the difference in bending performance between two adjacent conductive layers of the first electrode 210 can be further reduced, and further the service performance and the service life of the light emitting device 21 and the display panel are further ensured.
Since the smaller the vickers hardness of the conductive layer, the better the flexibility and bending property of the conductive layer, and the smaller the change in resistance after bending, the vickers hardness of the first, second, and third conductive layers 211, 212, 213 may be limited to a certain range in some alternative embodiments.
Alternatively, at least one of the first conductive layer 211, the second conductive layer 212, and the third conductive layer 213 may have a vickers hardness of less than 30HV. As a preferred embodiment, the vickers hardness of each of the first conductive layer 211, the second conductive layer 212, and the third conductive layer 213 is less than 30HV.
The vickers hardness of the first conductive layer 211, the second conductive layer 212 and the second conductive layer 212 are limited within a certain range, so that each conductive layer of the first electrode 210 and the whole first electrode 210 have good flexibility and bending performance, and after the display panel is bent at a large angle or for multiple times, the resistance change of each conductive layer of the first electrode 210 is small, so that the resistance of the first electrode 210 of the light-emitting device 21 is always within a certain range.
In some alternative embodiments, the first conductive layer 211 may be a nanowire film layer, where the nanowire film layer has good light transmittance, so that the first conductive layer 211 can transmit light, and the second conductive layer 212 made of a non-light-transmitting metal material or metal alloy material can reflect light, so that the first electrode 210 may be a top-emission anode suitable for a top-emission structure, and when the light-emitting device 21 is used in a display panel, the display panel may employ the top-emission structure.
Alternatively, the light transmittance of the first conductive layer 211 may be greater than or equal to 90%. As a preferred embodiment, the light transmittance of the first conductive layer 211 is greater than or equal to 95% to further improve the light utilization efficiency.
Alternatively, the first electrode 210 is provided as an anode, and the reflectivity of the first electrode 210 may be adjusted by adjusting the material of the first electrode 210 and the thickness of each film layer, etc., in this embodiment, the reflectivity of the first electrode 210 is greater than 80%.
In some alternative embodiments, the third conductive layer 213 and the first conductive layer 211 may be nano metal wire film layers, so that the first conductive layer 211 and the third conductive layer 213 have good flexibility and conductivity, and can further improve the bending performance of the first electrode 210, further reduce the resistance change of the first electrode 210 within the predetermined bending frequency range, and further improve the service performance and the service life of the light emitting device 21 and the display panel.
Alternatively, the nanowire film layer may be fabricated by spin coating, and when the nanowire film layer is fabricated, the more the spin coating times, the smaller the sheet resistance of the nanowire film layer is, and the better the conductivity is, so that the thicknesses and conductivities of the first conductive layer 211 and the third conductive layer 213 may be adjusted by controlling the spin coating times.
In some alternative embodiments, the resistivity of the first conductive layer 211, the second conductive layer 212, and the third conductive layer 213 may be less than 1.80×10 -8 Ω/m to increase the conductivity of each conductive layer of the first electrode 210, thereby reducing the resistance of the first electrode 210.
Alternatively, the sheet resistance of the first electrode 210 may be less than 0.6 Ω/sq to secure the use performance of the light emitting device 21. As a preferred embodiment, the sheet resistance of the first electrode 210 may be less than or equal to 0.5 Ω/sq.
In some alternative embodiments, the thickness of each conductive layer of the first electrode 210 may be set and adjusted according to actual use needs. Alternatively, the thicknesses of the first conductive layer 211 and the third conductive layer 213 may be set between 8nm and 12nm, and the thickness of the second conductive layer 212 may be set between 50nm and 120 nm.
In some alternative embodiments, the first conductive layer 211 and the third conductive layer 213 may be nano silver wire film layers, where the nano silver wire film layers have good flexibility, electrical conductivity and light transmittance, and the second conductive layer 212 may be a silver metal layer or a silver alloy layer, where the silver metal layer and the silver alloy layer have good flexibility, electrical conductivity and high reflectivity.
Optionally, the second conductive layer 212 is a silver-palladium alloy layer, and by doping palladium, the wear resistance and corrosion resistance of the second conductive layer 212 can be improved, and the flexibility of the second conductive layer 212 can be further improved. Alternatively, the mass doping ratio of palladium in the second conductive layer 212 may be between 0.05% and 2%. Alternatively, the second conductive layer 212 may be a silver-indium alloy layer, which is also within the scope of the present application.
As a preferred embodiment, the first conductive layer 211 and the third conductive layer 213 are nano silver wire film layers, the second conductive layer 212 is a silver palladium alloy layer, and the second conductive layer 212 can be protected by the first conductive layer 211 and the third conductive layer 213, and the overall flexibility of the first electrode 210 can be improved.
In order to verify the practical effect of the above design, a first experimental example and a first comparative example were designed. In the first experimental example and the first comparative example, the composite film layer includes the first conductive layer 211, the second conductive layer 212, and the third conductive layer 213 which are stacked, and the thickness of the first conductive layer 211, the thickness of the second conductive layer 212, and the thickness of the third conductive layer 213 in the first experimental example are the same as the thickness of the first conductive layer 211, the thickness of the second conductive layer 212, and the thickness of the third conductive layer 213 in the first comparative example, respectively.
In the first experimental example, the first conductive layer 211 and the third conductive layer 213 of the composite film layer are both nano silver wire film layers, and the second conductive layer 212 is a silver alloy layer; in the first comparative example, the first conductive layer 211 and the third conductive layer 213 of the composite film layer are both indium tin oxide layers, and the second conductive layer 212 is a silver layer.
The composite film layer corresponding to the first experimental example and the first comparative example is subjected to bending test, and the test result is shown in fig. 4. Fig. 4 is a schematic diagram of the sheet resistance change of the composite film layer corresponding to the first experimental example and the first comparative example. In fig. 4, the abscissa indicates the number of bending times and the ordinate indicates the sheet resistance.
As can be seen from fig. 4, in the composite film layer in the first experimental example, the sheet resistance change is small in the bending process, and compared with the sheet resistance increase rate of the composite film layer before bending, the sheet resistance of the composite film layer is always less than 100%, and after 5000 times of bending, the sheet resistance of the composite film layer is basically not increased, and the electrical property tends to be stable; the composite film layer corresponding to the first comparative example showed a linear increase in sheet resistance after 10000 times of bending with an increase in the number of times of bending, although the sheet resistance did not change much when the number of times of bending was less than 10000 times.
Therefore, by providing the first conductive layer 211 and the third conductive layer 213 of the first electrode 210 as a nano-metal wire film layer, the electrical properties of the first electrode 210 can be maintained stable, thereby ensuring the service performance and life of the light emitting device 21 and the display panel.
These embodiments are not exhaustive of all details, nor are they intended to limit the application to the precise embodiments disclosed, in accordance with the application. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the application and the practical application, to thereby enable others skilled in the art to best utilize the application and various modifications as are suited to the particular use contemplated. The application is limited only by the claims and the full scope and equivalents thereof.
Claims (7)
1. A light-emitting device comprising a first electrode, a light-emitting layer, and a second electrode that are stacked, the first electrode comprising:
the first conductive layer is arranged on one side of the light-emitting layer;
the second conductive layer is arranged on one side of the first conductive layer, which is opposite to the light-emitting layer;
A third conductive layer arranged on one side of the second conductive layer facing away from the first conductive layer,
The first conductive layer, the second conductive layer and the third conductive layer comprise the same metal, and at least one of the first conductive layer and the third conductive layer is a nano metal wire film layer;
The difference in vickers hardness between the first conductive layer and the second conductive layer is less than 20HV, and the difference in vickers hardness between the third conductive layer and the second conductive layer is also less than 20HV;
The first conductive layer and the third conductive layer are nano silver wire film layers; the second conductive layer is a silver alloy layer; the sheet resistance of the first electrode is smaller than or equal to 0.5 omega/sq;
The second conductive layer is a silver-palladium alloy layer, and the mass doping ratio of palladium in the second conductive layer is 0.05% -2%.
2. The light-emitting device according to claim 1, wherein at least one of the first conductive layer, the second conductive layer, and the third conductive layer has a vickers hardness of less than 30HV.
3. The light-emitting device according to claim 1, wherein each of the first conductive layer, the second conductive layer, and the third conductive layer has a resistivity of less than 1.80×10 -8 Ω/m.
4. The light-emitting device according to claim 1, wherein the light transmittance of the first conductive layer is 90% or more.
5. The light-emitting device according to claim 1, wherein the first electrode is provided as an anode, and wherein the reflectance of the first electrode is greater than 80%.
6. The light-emitting device according to claim 1, wherein a thickness of the first conductive layer and the third conductive layer is 8nm to 12nm; the thickness of the second conductive layer is 50 nm-120 nm.
7. A display panel, the display panel comprising:
An array substrate;
a light emitting device layer disposed on the array substrate, the light emitting device layer comprising the light emitting device of any one of claims 1-6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111462365.2A CN114242912B (en) | 2021-12-02 | 2021-12-02 | Light emitting device and display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111462365.2A CN114242912B (en) | 2021-12-02 | 2021-12-02 | Light emitting device and display panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114242912A CN114242912A (en) | 2022-03-25 |
| CN114242912B true CN114242912B (en) | 2024-04-30 |
Family
ID=80752863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111462365.2A Active CN114242912B (en) | 2021-12-02 | 2021-12-02 | Light emitting device and display panel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114242912B (en) |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02251428A (en) * | 1989-03-27 | 1990-10-09 | Mitsui Toatsu Chem Inc | Transparent conductive film |
| JPH10301132A (en) * | 1997-04-24 | 1998-11-13 | Citizen Electron Co Ltd | Liquid crystal display device |
| CN1934727A (en) * | 2004-03-19 | 2007-03-21 | 伊斯曼柯达公司 | Organic light-emitting device having improved stability |
| CN101393889A (en) * | 2007-09-18 | 2009-03-25 | 卡西欧计算机株式会社 | Manufacturing method of display apparatus |
| CN103068573A (en) * | 2011-03-10 | 2013-04-24 | 松下电器产业株式会社 | Transparent conductive film, substrate with transparent conductive film, and organic electroluminescence element using same |
| CN105702875A (en) * | 2014-12-11 | 2016-06-22 | 财团法人工业技术研究院 | Light-emitting element, electrode structure and manufacturing method thereof |
| CN106653160A (en) * | 2017-01-23 | 2017-05-10 | 陕西煤业化工技术研究院有限责任公司 | Flexible composite transparent conductive thin film and preparation method therefor |
| CN109285960A (en) * | 2017-07-21 | 2019-01-29 | 电子科技大学中山学院 | It is a kind of based on copper nano-wire/ELECTRODE WITH BILAYER POLYMERIC object OLED transparent anode and preparation method |
| CN110957434A (en) * | 2019-12-12 | 2020-04-03 | 苏州星烁纳米科技有限公司 | Electroluminescent element, transparent display device and manufacturing method of electroluminescent element |
| CN111416058A (en) * | 2020-04-03 | 2020-07-14 | 苏州星烁纳米科技有限公司 | Conductive film, display device and manufacturing method of display device |
| CN111564564A (en) * | 2020-05-08 | 2020-08-21 | 苏州星烁纳米科技有限公司 | Electroluminescent device, preparation method thereof, display device and lighting device |
| CN214012530U (en) * | 2020-12-22 | 2021-08-20 | 苏州星烁纳米科技有限公司 | Conductive structure and electronic equipment |
| KR20210109135A (en) * | 2020-02-27 | 2021-09-06 | 아주대학교산학협력단 | Foldable electrode structure and foldable electronic device having the electrode structure |
-
2021
- 2021-12-02 CN CN202111462365.2A patent/CN114242912B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02251428A (en) * | 1989-03-27 | 1990-10-09 | Mitsui Toatsu Chem Inc | Transparent conductive film |
| JPH10301132A (en) * | 1997-04-24 | 1998-11-13 | Citizen Electron Co Ltd | Liquid crystal display device |
| CN1934727A (en) * | 2004-03-19 | 2007-03-21 | 伊斯曼柯达公司 | Organic light-emitting device having improved stability |
| CN101393889A (en) * | 2007-09-18 | 2009-03-25 | 卡西欧计算机株式会社 | Manufacturing method of display apparatus |
| CN103068573A (en) * | 2011-03-10 | 2013-04-24 | 松下电器产业株式会社 | Transparent conductive film, substrate with transparent conductive film, and organic electroluminescence element using same |
| CN105702875A (en) * | 2014-12-11 | 2016-06-22 | 财团法人工业技术研究院 | Light-emitting element, electrode structure and manufacturing method thereof |
| CN106653160A (en) * | 2017-01-23 | 2017-05-10 | 陕西煤业化工技术研究院有限责任公司 | Flexible composite transparent conductive thin film and preparation method therefor |
| CN109285960A (en) * | 2017-07-21 | 2019-01-29 | 电子科技大学中山学院 | It is a kind of based on copper nano-wire/ELECTRODE WITH BILAYER POLYMERIC object OLED transparent anode and preparation method |
| CN110957434A (en) * | 2019-12-12 | 2020-04-03 | 苏州星烁纳米科技有限公司 | Electroluminescent element, transparent display device and manufacturing method of electroluminescent element |
| KR20210109135A (en) * | 2020-02-27 | 2021-09-06 | 아주대학교산학협력단 | Foldable electrode structure and foldable electronic device having the electrode structure |
| CN111416058A (en) * | 2020-04-03 | 2020-07-14 | 苏州星烁纳米科技有限公司 | Conductive film, display device and manufacturing method of display device |
| CN111564564A (en) * | 2020-05-08 | 2020-08-21 | 苏州星烁纳米科技有限公司 | Electroluminescent device, preparation method thereof, display device and lighting device |
| CN214012530U (en) * | 2020-12-22 | 2021-08-20 | 苏州星烁纳米科技有限公司 | Conductive structure and electronic equipment |
Non-Patent Citations (3)
| Title |
|---|
| "Improvement of Alkali Durability of Silver-Based Multilayer Coatings for Use in Flat Panel Displays";Yuki AOSHIMA等;《The Japan Society of Applied Physics》;第第40卷卷(第第6A期期);第4166页左栏第1段-第4170右栏最后1段 * |
| "ITO/Ag/AgNW新型复合透明导电薄膜性能研究";张晓东等;《半导体光电》;第第40卷卷(第第2期期);第1页左栏第1段-第12页右栏第1段 * |
| "Nanowire-based transparent conductors for flexible electronics and optoelectronics";Jie Xue等;《Science Bulletin》;第第62卷卷(第第2期期);第1页左栏第1段-第12页右栏第1段 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114242912A (en) | 2022-03-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7259391B2 (en) | Vertical interconnect for organic electronic devices | |
| US11239442B2 (en) | Display panel and display device | |
| US10566568B2 (en) | Organic light emitting diode display substrate, organic light emitting diode display apparatus, and method of fabricating organic light emitting diode display substrate | |
| EP2465006B1 (en) | Solid state lighting element comprising an electrode with improved optical and electrical performances | |
| JP5548428B2 (en) | Method for producing transparent conductive film and transparent conductive film | |
| CN104571652B (en) | Touch control device structure | |
| TWI675321B (en) | Touch display device and method for making touch display device | |
| CN101226993A (en) | Transparent electrode and organic electroluminescence device including the same | |
| EP1831928A1 (en) | Organic electronic devices having two dimensional series interconnections | |
| CN103187430A (en) | Display device | |
| WO2016163323A1 (en) | Transparent conductive film and display device | |
| CN105702875A (en) | Light-emitting element, electrode structure and manufacturing method thereof | |
| CN105830170A (en) | Conductive structure and preparation method therefor | |
| KR102093626B1 (en) | Display device | |
| CN114242912B (en) | Light emitting device and display panel | |
| JP2022023785A (en) | Flexible touch sensor and flexible touch display module | |
| CN111834549B (en) | Display panel and display device | |
| CN110568956B (en) | Touch structure and flexible display with same | |
| CN109148708B (en) | Display panel and display device | |
| CN101593813A (en) | Organic electroluminescence device | |
| CN113078271B (en) | Organic electroluminescent device and display device | |
| CN212113755U (en) | Organic light-emitting display panel and display device | |
| KR102179698B1 (en) | Preparation method of transparent electrode and transparent electrode prepared by the same | |
| TWI388240B (en) | Transparent electrode and an organic electroluminescent element containing the transparent electrode | |
| CN114551758A (en) | OLED display panel and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |