CN114242639A - Bonding structure for increasing temporary bonding strength of surface of plastic packaging material and manufacturing method - Google Patents

Bonding structure for increasing temporary bonding strength of surface of plastic packaging material and manufacturing method Download PDF

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Publication number
CN114242639A
CN114242639A CN202111524655.5A CN202111524655A CN114242639A CN 114242639 A CN114242639 A CN 114242639A CN 202111524655 A CN202111524655 A CN 202111524655A CN 114242639 A CN114242639 A CN 114242639A
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CN
China
Prior art keywords
bonding
wafer
layer
adhesive layer
temporary
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Pending
Application number
CN202111524655.5A
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Chinese (zh)
Inventor
戴风伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Center for Advanced Packaging Co Ltd
Shanghai Xianfang Semiconductor Co Ltd
Original Assignee
National Center for Advanced Packaging Co Ltd
Shanghai Xianfang Semiconductor Co Ltd
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Publication date
Application filed by National Center for Advanced Packaging Co Ltd, Shanghai Xianfang Semiconductor Co Ltd filed Critical National Center for Advanced Packaging Co Ltd
Priority to CN202111524655.5A priority Critical patent/CN114242639A/en
Publication of CN114242639A publication Critical patent/CN114242639A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68372—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support a device or wafer when forming electrical connections thereto

Abstract

The invention relates to a method for manufacturing a bonding structure for increasing the temporary bonding strength of the surface of a plastic package material, which comprises the following steps: providing a wafer which is subjected to plastic packaging and thinning; manufacturing an adhesive layer on the back of the wafer; and temporarily bonding the wafer with the adhesive layer and the slide glass through temporary bonding glue. The invention also relates to a bonding structure for increasing the temporary bonding strength of the surface of the plastic packaging material, which comprises the following components: finishing the plastic packaging of the thinned wafer; the adhesive layer covers the back surface of the wafer; the bonding glue layer covers the adhesive layer; and the slide glass is arranged above the bonding adhesive layer. According to the method and the structure, a layer of organic material is coated on the surface of the thinned plastic packaging layer in a spinning mode, photoetching is selectively carried out, and then a temporary bonding process is carried out, so that the adhesive force between a slide glass and the plastic packaging layer can be effectively improved, and the subsequent rewiring manufacturing, solder ball electroplating or TSV back face exposure process is supported.

Description

Bonding structure for increasing temporary bonding strength of surface of plastic packaging material and manufacturing method
Technical Field
The invention relates to the technical field of semiconductor packaging, in particular to a bonding structure for increasing the temporary bonding strength of the surface of a plastic packaging material and a manufacturing method thereof.
Background
With the development of science and technology, electronic products tend to be miniaturized and multifunctional. People make electronic systems smaller and smaller, the integration level is higher and higher, and the functions are more and more enhanced, so that the semiconductor industry needs to thin the device wafer to 100 microns or below in order to meet the requirements. Ultra-thin wafers are fragile and prone to warping and waviness, which are difficult issues with device wafer thinning and thin chip handling.
For the RDL-first Fanout or CoWoS technology, after plastic packaging and plastic packaging thinning are completed, a back wafer level process, such as RDL, solder ball electroplating or TSV back head exposing process, is performed, and since Epoxy Molding Compound (EMC) is thinned to be very thin or due to warping and other problems, the process is difficult to be performed directly, and temporary bonding is needed to assist in completing the subsequent process. However, due to poor adhesion between the EMC material and the temporary bonding adhesive material, the temporary bonding may suffer from delamination problems caused by wafer warpage or stress generated by high temperature.
Disclosure of Invention
The invention aims to provide a bonding structure and a manufacturing method for increasing the temporary bonding strength of the surface of a plastic packaging material.
In a first aspect of the present invention, to solve the problems in the prior art, the present invention provides a method for manufacturing a bonding structure for increasing temporary bonding strength on a surface of a molding compound, including:
providing a wafer which is subjected to plastic packaging and thinning;
manufacturing an adhesive layer on the back of the wafer; and
and temporarily bonding the wafer with the adhesive layer and the carrier glass through the temporary bonding glue.
In a preferred embodiment of the present invention, it is provided that the method further comprises: and carrying out photoetching process on the adhesion layer, and removing the adhesion layer above the chips in the wafer.
In a further preferred embodiment of the invention, it is provided that the adhesion layer is formed by spin coating an organic material on the rear side of the wafer.
In a further preferred embodiment of the present invention, the material of the adhesion layer is a photosensitive resin.
In another preferred embodiment of the present invention, it is provided that a temporary bonding glue is coated on the adhesion layer to form a bonding glue layer;
and bonding the wafer provided with the bonding adhesive layer with the slide glass to obtain a temporary wafer bonding pair.
In a further preferred embodiment of the present invention, it is provided that a temporary bonding glue is applied to the surface of the carrier sheet to form a bonding glue layer;
and bonding the bonding adhesive layer on the surface of the carrier and the adhesive layer on the back surface of the wafer to obtain a temporary wafer bonding pair.
In a second aspect of the present invention, in order to solve the problems in the prior art, the present invention provides a bonding structure for increasing temporary bonding strength on a surface of a molding compound, including:
finishing the plastic packaging of the thinned wafer;
the adhesive layer covers the back surface of the wafer;
the bonding glue layer covers the adhesive layer; and
and the slide glass is arranged above the bonding adhesive layer.
In a preferred embodiment of the present invention, it is provided that the wafer after the plastic packaging and thinning includes:
a chip;
the metal bonding pad is positioned on the front surface of the chip;
the plastic packaging layer wraps the chip;
and the passivation layer covers the front surfaces of the chip and the plastic packaging layer and wraps the metal bonding pad.
In a further preferred embodiment of the invention, it is provided that the adhesive layer covers the back of the chip and the encapsulation layer.
In a further preferred embodiment of the invention, it is provided that the adhesive layer covers the rear side of the molding compound layer.
The invention has at least the following beneficial effects: the invention discloses a bonding structure and a manufacturing method for increasing temporary bonding strength of the surface of a plastic packaging material, wherein a layer of organic material is coated on the surface of a thinned plastic packaging layer in a spinning mode, photoetching is selectively carried out, and then a temporary bonding process is carried out, so that the adhesive force between a slide glass and the plastic packaging layer can be effectively improved, and the subsequent rewiring manufacturing, solder ball electroplating or TSV back exposure process is supported; the method has the advantages of simple process, low cost and obvious effect.
Drawings
To further clarify the above and other advantages and features of embodiments of the present invention, a more particular description of embodiments of the invention will be rendered by reference to the appended drawings. It is appreciated that these drawings depict only typical embodiments of the invention and are therefore not to be considered limiting of its scope. In the drawings, the same or corresponding parts will be denoted by the same or similar reference numerals for clarity.
Fig. 1 is a schematic diagram illustrating a bonding structure for increasing the temporary bonding strength of the surface of the molding compound according to an embodiment of the present invention.
Fig. 2A to 2C are schematic cross-sectional views illustrating a manufacturing process of a bonding structure for increasing temporary bonding strength on a surface of a molding compound according to an embodiment of the invention.
Detailed Description
It should be noted that the components in the figures may be exaggerated and not necessarily to scale for illustrative purposes.
In the present invention, the embodiments are only intended to illustrate the aspects of the present invention, and should not be construed as limiting.
In the present invention, the terms "a" and "an" do not exclude the presence of a plurality of elements, unless otherwise specified.
It is further noted herein that in embodiments of the present invention, only a portion of the components or assemblies may be shown for clarity and simplicity, but those of ordinary skill in the art will appreciate that, given the teachings of the present invention, required components or assemblies may be added as needed in a particular scenario.
It is also noted herein that, within the scope of the present invention, the terms "same", "equal", and the like do not mean that the two values are absolutely equal, but allow some reasonable error, that is, the terms also encompass "substantially the same", "substantially equal".
It should also be noted herein that in the description of the present invention, the terms "central", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In addition, the embodiments of the present invention describe the process steps in a specific order, however, this is only for convenience of distinguishing the steps, and does not limit the order of the steps.
Fig. 1 is a schematic diagram illustrating a bonding structure for increasing the temporary bonding strength of the surface of the molding compound according to an embodiment of the present invention.
As shown in fig. 1, the temporary bonding structure with the adhesive layer includes a wafer 100 that is subjected to wafer level plastic packaging or plastic packaging thinning, an adhesive layer 200, a bonding glue layer 300, and a carrier 400.
The wafer 100 after the plastic packaging thinning comprises a first chip 101, a second chip 102, a metal pad 103, a passivation layer 104 and a plastic packaging layer 105. The molding layer 105 wraps the first chip 101 and the second chip 102. The metal pads 103 are located on the front side of the first chip 101 and the second chip 102. The passivation layer covers the front surfaces of the first chip 101, the second chip 102 and the molding layer, and wraps the metal pads 103. The first chip 101 and the second chip 102 may be logic chips such as a CPU, a DSP, a GPU, and an FPGA, may also be memory chips such as a DRAM and a Flash, and may also be other types of chips or sensors (such as an MEMS sensor) such as an SOC. The first chip 101 and the second chip 102 may be the same chip or different chips. In one embodiment of the present invention, the material of the molding layer is Epoxy Molding Compound (EMC).
When the chips do not need to dissipate heat, the adhesive layer 200 covers the back surfaces of the first chip 101, the second chip 102 and the molding layer 105, that is, the adhesive layer 200 covers the back surface of the wafer 100 after the wafer-level plastic packaging or the plastic packaging thinning is completed. In one embodiment of the present invention, the material of the adhesion layer is a highly viscous organic material such as polyimide, bis-benzocyclobutene resin, phenylbenzobisoxazole resin, or the like. The organic material has better adhesiveness with the carrier material such as EMC material or glass/silicon due to self adhesiveness, so that the adhesive force between the carrier and the EMC can be effectively improved to support and complete the subsequent process.
When the chip needs to dissipate heat, the adhesive layer 200 covers the back of the molding layer 105. When the chip needs heat dissipation, the adhesion layer 200 is subjected to photolithography to remove the adhesion layer covering the first chip 101 and the second chip 102. In one embodiment of the present invention, the material of the adhesion layer is a photosensitive resin.
The bonding glue layer 300 is covered on the adhesion layer 200. In one embodiment of the present invention, the material of the bonding glue layer is a thermoplastic or thermosetting organic material, and may also be an inorganic material containing Cu, Ni, Cr, Co, etc., and the bonding glue layer can be removed by heating, mechanical, chemical, laser, freezing, etc. When the bonding glue layer is removed, the adhesive layer is not decomposed due to the removal process.
The carrier sheet 400 is disposed over the bond paste layer 300. In one embodiment of the present invention, the carrier is generally a monocrystalline silicon wafer, and the carrier may be made of other materials, such as a glass carrier, an organic substrate, a metal substrate, a ceramic substrate, a substrate formed by combining an organic substrate and a metal substrate, or other similar materials. It will be understood by those skilled in the art that flat surfaces of a particular strength may be used as the carrier sheet in the present invention.
Fig. 2A to 2C are schematic cross-sectional views illustrating a manufacturing process of a bonding structure for increasing temporary bonding strength on a surface of a molding compound according to an embodiment of the invention.
In step 1, as shown in fig. 2A, a wafer 100 with a plastic thinning completed is provided. The wafer 100 includes a first chip 101, a second chip 102, a metal pad 103, a passivation layer 104, and a molding layer 105. The molding layer 105 wraps the first chip 101 and the second chip 102. The metal pads are located on the front side of the first chip 101 and the second chip 102. The passivation layer covers the front surfaces of the first chip 101, the second chip 102 and the molding layer, and wraps the metal pads 103.
In step 2, as shown in fig. 2B, an adhesion layer 200 is formed on the back surface of the wafer 100. The adhesion layer 200 is formed by spin coating an organic material on the back side of the wafer 100. In one embodiment of the invention, when the chip needs heat dissipation, the material of the adhesion layer is photosensitive resin capable of performing a photolithography process.
Optionally, in step 3, as shown in fig. 2B, a photolithography process is performed on the adhesion layer 200 to remove the adhesion layer above the chip. In an embodiment of the present invention, the adhesion layer 200 is subjected to photolithography, and the adhesion layer covering the first chip 101 and the second chip 102 is removed to expose the first chip 101 and the second chip 102.
In step 4, as shown in fig. 2C, the wafer 100 with the adhesive layer 200 is temporarily bonded to the carrier 400 by a temporary bonding adhesive. A first method for temporarily bonding a wafer 100 with an adhesive layer 200 to a carrier 400, comprising: coating temporary bonding glue on the adhesion layer 200 to form a bonding glue layer 300; and bonding the wafer 100 provided with the bonding glue layer 300 and the slide 400 to obtain a temporary wafer bonding pair. A second method for temporarily bonding a wafer 100 with an adhesive layer 200 to a carrier 400, comprising: coating temporary bonding glue on the surface of the slide 400 to form a bonding glue layer 300; and bonding the bonding glue layer 300 on the surface of the carrier 400 and the adhesive layer 200 on the back surface of the wafer 100 to obtain a temporary wafer bonding pair.
And carrying out subsequent rewiring manufacturing, solder ball electroplating or TSV back exposure process on the wafer after temporary bonding.
The invention has at least the following beneficial effects: the invention discloses a bonding structure and a manufacturing method for increasing temporary bonding strength of the surface of a plastic packaging material, wherein a layer of organic material is coated on the surface of a thinned plastic packaging layer in a spinning mode, photoetching is selectively carried out, and then a temporary bonding process is carried out, so that the adhesive force between a slide glass and the plastic packaging layer can be effectively improved, and the subsequent rewiring manufacturing, solder ball electroplating or TSV back exposure process is supported; the method has the advantages of simple process, low cost and obvious effect.
Although some embodiments of the present invention have been described herein, those skilled in the art will appreciate that they have been presented by way of example only. Numerous variations, substitutions and modifications will occur to those skilled in the art in light of the teachings of the present invention without departing from the scope thereof. It is intended that the following claims define the scope of the invention and that methods and structures within the scope of these claims and their equivalents be covered thereby.

Claims (10)

1. A manufacturing method of a bonding structure for increasing temporary bonding strength of the surface of a plastic package material comprises the following steps:
providing a wafer which is subjected to plastic packaging and thinning;
manufacturing an adhesive layer on the back of the wafer; and
and temporarily bonding the wafer with the adhesive layer and the carrier glass through the temporary bonding glue.
2. The method for manufacturing a bonding structure for increasing temporary bonding strength on the surface of a molding compound according to claim 1, further comprising: and carrying out photoetching process on the adhesion layer, and removing the adhesion layer above the chips in the wafer.
3. The method as claimed in claim 1, wherein the adhesion layer is formed by spin coating an organic material on the back surface of the wafer.
4. The method for manufacturing a bonding structure for increasing the temporary bonding strength on the surface of a molding compound according to claim 2, wherein the material of the adhesion layer is photosensitive resin.
5. The method for manufacturing a bonding structure for increasing the temporary bonding strength of the surface of the plastic package material as claimed in claim 1, wherein a temporary bonding glue is coated on the adhesion layer to form a bonding glue layer;
and bonding the wafer provided with the bonding adhesive layer with the slide glass to obtain a temporary wafer bonding pair.
6. The method for manufacturing a bonding structure for increasing the temporary bonding strength of the surface of a plastic package material as claimed in claim 1, wherein the temporary bonding glue is coated on the surface of the carrier to form a bonding glue layer;
and bonding the bonding adhesive layer on the surface of the carrier and the adhesive layer on the back surface of the wafer to obtain a temporary wafer bonding pair.
7. A bonding structure for increasing temporary bonding strength of a surface of a molding compound, comprising:
finishing the plastic packaging of the thinned wafer;
the adhesive layer covers the back surface of the wafer;
the bonding glue layer covers the adhesive layer; and
and the slide glass is arranged above the bonding adhesive layer.
8. The bonding structure for increasing the temporary bonding strength on the surface of the plastic package material as recited in claim 7, wherein the wafer after finishing the plastic package thinning comprises:
a chip;
the metal bonding pad is positioned on the front surface of the chip;
the plastic packaging layer wraps the chip;
and the passivation layer covers the front surfaces of the chip and the plastic packaging layer and wraps the metal bonding pad.
9. The bonding structure for increasing the temporary bonding strength of the surface of the plastic package material as claimed in claim 7 or 8, wherein the adhesive layer covers the back surfaces of the chip and the plastic package layer.
10. The bonding structure for increasing the temporary bonding strength of the surface of the plastic package material as recited in claim 7 or 8, wherein the adhesive layer covers the back surface of the plastic package layer.
CN202111524655.5A 2021-12-14 2021-12-14 Bonding structure for increasing temporary bonding strength of surface of plastic packaging material and manufacturing method Pending CN114242639A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111524655.5A CN114242639A (en) 2021-12-14 2021-12-14 Bonding structure for increasing temporary bonding strength of surface of plastic packaging material and manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111524655.5A CN114242639A (en) 2021-12-14 2021-12-14 Bonding structure for increasing temporary bonding strength of surface of plastic packaging material and manufacturing method

Publications (1)

Publication Number Publication Date
CN114242639A true CN114242639A (en) 2022-03-25

Family

ID=80755742

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111524655.5A Pending CN114242639A (en) 2021-12-14 2021-12-14 Bonding structure for increasing temporary bonding strength of surface of plastic packaging material and manufacturing method

Country Status (1)

Country Link
CN (1) CN114242639A (en)

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