CN114207826A - 图像传感器及其制作方法、成像装置和终端设备 - Google Patents
图像传感器及其制作方法、成像装置和终端设备 Download PDFInfo
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- CN114207826A CN114207826A CN202080035420.7A CN202080035420A CN114207826A CN 114207826 A CN114207826 A CN 114207826A CN 202080035420 A CN202080035420 A CN 202080035420A CN 114207826 A CN114207826 A CN 114207826A
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
一种图像传感器(20)，其包括具有多个基本单元的像素阵列，基本单元包括第一像素(111)、第二像素(112)和第三像素(113)，第一像素(111)为短波段光像素，第二像素(112)为中波段光像素；所述像素阵列在垂直方向上包括彩色滤光层(120)、第一衬底层(130)、介质层(140)和第二衬底层(150)；在第一衬底层(130)的正面形成有向第一衬底层(130)延伸的且与第一像素(111)相对应的第一凹槽(137)以及与第二像素(112)相对应的第二凹槽(138)，且第一凹槽(137)的深度大于第二凹槽(138)的深度。该图像传感器可以提高彩色图像成像的精确性。
Description
PCT国内申请，说明书已公开。
Claims (12)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/098604 WO2022000142A1 (zh) | 2020-06-28 | 2020-06-28 | 图像传感器及其制作方法、成像装置和终端设备 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114207826A true CN114207826A (zh) | 2022-03-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202080035420.7A Pending CN114207826A (zh) | 2020-06-28 | 2020-06-28 | 图像传感器及其制作方法、成像装置和终端设备 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN114207826A (zh) |
| WO (1) | WO2022000142A1 (zh) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100563018C (zh) * | 2006-05-09 | 2009-11-25 | 台湾积体电路制造股份有限公司 | 背照式传感器及其形成方法 |
| KR101844952B1 (ko) * | 2011-04-15 | 2018-04-04 | 삼성전자주식회사 | 이미지 센서 |
| CN102723349B (zh) * | 2012-06-26 | 2015-01-21 | 中国科学院上海高等研究院 | 带有隔离层的cmos图像传感器及其制作方法 |
| CN108281435A (zh) * | 2018-01-04 | 2018-07-13 | 德淮半导体有限公司 | 一种图像传感器及其形成方法 |
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- 2020-06-28 WO PCT/CN2020/098604 patent/WO2022000142A1/zh active Application Filing
- 2020-06-28 CN CN202080035420.7A patent/CN114207826A/zh active Pending
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| Publication number | Publication date |
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| WO2022000142A1 (zh) | 2022-01-06 |
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