CN114205541B - Dark level correction structure and method for image sensor - Google Patents
Dark level correction structure and method for image sensor Download PDFInfo
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Abstract
The invention discloses a dark level correction structure and a dark level correction method of an image sensor, wherein the correction method comprises the following steps: s1, reading voltage values of a pixel signal and a ramp signal, and inputting the voltage values into a comparator; s2, setting a reference voltage when the dark pixel line is periodic, and outputting a CDS value of a dark pixel signal after the comparator is turned over twice; s3, the digital module converts the output value of the step S2 into a level value delta V and feeds back the dark level signal to the reference voltage generator; s4, when the effective pixel line period is shortened, setting the reference voltage again, and outputting a CDS value of the effective pixel signal after the comparator is turned over twice; s5, the digital module directly outputs the effective pixel signals in the step S4 through the output module. The method can effectively shorten the time for correcting the dark level of the image sensor.
Description
Technical Field
The invention relates to the technical field of image sensors, in particular to a dark level correction structure and a dark level correction method of an image sensor.
Background
The physical device generates charges in the pixel unit due to various reasons such as impurities, heat, etc., even when light is not irradiated to the pixel, and the charges generate dark current. Dark current is difficult to distinguish from charges generated by illumination, and finally the charges are read out by an image sensor to be displayed in an image, so that the signal to noise ratio is reduced, and the image quality is affected.
Disclosure of Invention
The invention aims to solve the technical problem of eliminating the influence of the dark level on an image sensor. The invention aims to provide a dark level correction structure and a dark level correction method of an image sensor, which can improve image quality.
The invention is realized by the following technical scheme:
in a first aspect, the present invention also provides an image sensor dark level correction structure including: a pixel block 11, a digital-to-analog converter 12, a reference voltage generator 13, a comparator 14, a counter 15, a digital block 16, an output block 17, a switch a, and a switch B;
the switch a is provided in the comparator 14;
the output end of the pixel module 11 is connected with the negative phase input end of the comparator 14, the output end of the digital-to-analog converter 12 is connected with the positive phase input end of the comparator 14, the output end of the reference voltage generator 13 is connected with the positive phase input end of the comparator 14, and the comparator 14, the counter 15, the digital module 16 and the output module 17 are sequentially connected, and the digital module 16 is connected with the input end of the reference voltage generator 13.
Further, the input stage 141 of the comparator includes: p-channel transistors MP1, MP2, N-channel transistors MN1, MN2, current source I and switch a;
the grid electrode of MN1 is connected with the input end of slope signal, the drain electrode of MN1 is connected with the drain electrode of MP1, the source electrode of MN1 is connected with the source electrode of MN2, the public end of source electrode of MN1 and source electrode of MN2 is connected with current source I, the grid electrode of MN2 is connected with the input end of pixel signal, the drain electrode of MN2 is connected with the drain electrode of MP2,
the source electrode of MP2 is connected with the source electrode of MP1, the grid electrode of MP2 is connected with the grid electrode of MP1, and the drain electrode of MP1 is connected with the common end of MP1 grid electrode and MP2 grid electrode;
one end of the switch A is connected with the common end of the drain electrode of the MP1 and the drain electrode of the MN1, and the other end of the switch A is connected with the common end of the drain electrode of the MP2 and the drain electrode of the MN 2.
In a second aspect, the present invention further provides an image sensor pixel unit, which is formed by a pixel matrix of M rows and N columns, where a first row is a dark pixel row (subjected to light shielding treatment), and the remaining M-1 rows are effective pixel rows. When the pixel signals are read, a mode of reading from top to bottom row by row is adopted.
In a third aspect, the present invention provides a method for correcting a dark level of an image sensor, comprising the steps of:
s1, reading voltage values of a pixel signal and a ramp signal, and inputting the voltage values into a comparator;
specifically, the pixel signal is a dark pixel signal or an effective pixel signal, the operation period of the dark pixel signal is a dark pixel line period, the operation period of the effective pixel signal is an effective pixel line period, one dark pixel line period is arranged, the number of the effective pixel line periods is multiple, the dark pixel line signal is read firstly, and then the effective pixel line signal is read;
s2, setting a reference voltage when the dark pixel line is periodic, and outputting a CDS value of a dark pixel signal after the comparator is turned over twice;
specifically, the digital-to-analog converter sets 2 reading phases, namely an R phase and an S phase; when a dark pixel row signal is input, a reference voltage generator firstly provides a voltage with a voltage value of Vref in an R phase, and after a comparison period is entered, a counter value corresponding to the first overturn of a comparator is R_data;
the S-stage reference voltage generator provides Vref voltage again, after the period of entering the comparator, the counter value corresponding to the second overturn of the comparator is S_data, the final output value CDS=S_data-R_data, and the signal is a dark pixel signal;
s3, the digital module converts the output value of the step S2 into a level value delta V and feeds back the dark level signal to the reference voltage generator;
s4, when the effective pixel line period is shortened, setting the reference voltage again, and outputting a CDS value of the effective pixel signal after the comparator is turned over twice;
specifically, when an effective pixel row signal is input, the reference voltage generator provides a voltage with a voltage value of Vref+DeltaV in the R phase, and after a comparison period is entered, the count value of the comparator when the comparator turns over for the first time is R_data;
the S-stage reference voltage generator provides voltage with the voltage value of Vref again, after the comparison period is entered, the value of the comparator is S_data when the comparator turns over for the second time, the final output value is CDS=S_data-R_data, and the signal is an effective pixel signal;
s5, the digital module directly outputs the effective pixel signals in the step S4 through the output module.
Compared with the prior art, the invention has the following advantages and beneficial effects:
1. the time to process the dark level of the image sensor is significantly shortened. By reading the dark pixel signal first and then reading the effective pixel signal, the amount of the read dark level signal can be automatically subtracted by analog comparison operation when the effective pixel is read, and the whole frame is not required to be read completely, and then the dark level correction is carried out, so that the processing time can be reduced.
2. Dynamic adjustment of the input range of the comparator is achieved. The dark level correcting structure of the invention sets the reference voltage by carrying the reference voltage regulating circuit, so that the ramp signal can deviate up and down at the input end of the comparator, the dark level deviation is led into the R section of the effective pixel line period by utilizing the characteristic, and the counter count value of the comparator is subtracted from the counter count value of the comparator when the comparator is turned for the second time (S section), thereby eliminating the dark level signal and inputting the effective pixel signal.
Drawings
The accompanying drawings, which are included to provide a further understanding of embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiments of the invention. In the drawings:
FIG. 1 is a schematic diagram of a dark level correction structure of an image sensor according to the present invention;
FIG. 2 is a schematic diagram of a comparator according to the present invention;
FIG. 3 is a schematic diagram of a pixel unit of an image sensor according to the present invention;
FIG. 4 is a timing diagram of dark pixel row periods according to the present invention;
FIG. 5 is a timing diagram of an effective pixel row period according to the present invention;
FIG. 6 is a flowchart of a dark level correction method of an image sensor according to the present invention.
Detailed Description
For the purpose of making apparent the objects, technical solutions and advantages of the present invention, the present invention will be further described in detail with reference to the following examples and the accompanying drawings, wherein the exemplary embodiments of the present invention and the descriptions thereof are for illustrating the present invention only and are not to be construed as limiting the present invention.
Example 1
The present embodiment provides a dark level correction structure of an image sensor, as shown in fig. 1, the dark level correction structure includes: a pixel block 11, a digital-to-analog converter 12, a reference voltage generator 13, a comparator 14, a counter 15, a digital block 16, an output block 17, a switch a, and a switch B;
switch a is provided in the input stage 141 of the comparator 14;
the output end of the pixel module 11 is connected with the negative phase input end of the comparator 14, the output end of the digital-to-analog converter 12 is connected with the positive phase input end of the comparator 14, the output end of the reference voltage generator 13 is connected with the positive phase input end of the comparator 14, and the comparator 14, the counter 15, the digital module 16 and the output module 17 are sequentially connected, and the digital module 16 is connected with the input end of the reference voltage generator 13.
The pixel module 11 is used for reading pixel signals, including dark pixel signals or effective pixel signals;
the pixel module is controlled by different signals of SX, RX and TX, wherein SX is a pixel reading selection signal, RX is a pixel zero clearing enabling signal, and TX is a pixel reading enabling signal.
The digital-to-analog converter 12 is used for generating a ramp signal;
the digital-to-analog converter 12 sets 2 reading stages, the R stage is a zero clearing stage for reading circuit noise, and the S stage is used for reading effective signals containing the circuit noise;
the reference voltage generator 13 is used for setting a reference voltage;
the comparator is used for comparing the pixel signal and the ramp signal;
the digital module 16 is used for storing, judging and processing the output value of the counter 14, and when judging to be a dark pixel level value, feeding back to the reference voltage generator; when the effective pixel level value is judged, the effective pixel level value is directly output through the output module;
the output module 17 is used for outputting the effective pixel signal.
Fig. 2 is a schematic diagram of a comparator according to the present invention. As shown, the input stage 141 of the comparator of the present invention comprises: p-channel transistors MP1, MP2, N-channel transistors MN1, MN2, current source I and switch a;
the grid electrode of MN1 is connected with the input end of slope signal, the drain electrode of MN1 is connected with the drain electrode of MP1, the source electrode of MN1 is connected with the source electrode of MN2, the public end of source electrode of MN1 and source electrode of MN2 is connected with current source I, the grid electrode of MN2 is connected with the input end of pixel signal, the drain electrode of MN2 is connected with the drain electrode of MP2,
the source electrode of MP2 is connected with the source electrode of MP1, the grid electrode of MP2 is connected with the grid electrode of MP1, and the drain electrode of MP1 is connected with the common end of MP1 grid electrode and MP2 grid electrode;
one end of the switch A is connected with the common end of the drain electrode of the MP1 and the drain electrode of the MN1, and the other end of the switch A is connected with the common end of the drain electrode of the MP2 and the drain electrode of the MN 2.
FIG. 3 is a schematic diagram of a pixel unit structure according to the present invention. As shown in the figure, the pixel unit of the invention consists of a pixel matrix of M rows and N columns, wherein the first row is a dark pixel row (subjected to shading treatment), and the rest M-1 rows are effective pixel rows. When the pixel signals are read, a mode of reading from top to bottom row by row is adopted.
FIG. 4 is a timing diagram of dark pixel row periods according to the present invention. When reading dark pixel signals, the functional actions of the structure include:
1. during the R-phase reference voltage setting: the switch B is closed to enable V_RP2=V, meanwhile, the switch A is closed to quicken loop stabilization, the voltage of an output ramp signal V_RP1 is kept unchanged during the period, the left polar plate of the capacitor C0 is not changed in potential, and the influence of V_RP1 on V_RP2 is 0;
2. during the R-phase comparison: the switch A and the switch B are opened, the comparator works in an open loop state, during the period V_RP1 starts to generate a slope action, V=Q/C is not equal to 0, and V_RP2=V_RP 1 is not equal to C 0 /(C in +C 0 ) Wherein C in The equivalent capacitance of the non-inverting input end of the comparator to the ground is represented, and the count value of the comparator when the comparator turns over is R_data=default;
3. during the S-stage reference voltage setting: the switch B is closed, so that V_RP 2=V, and meanwhile, the switch A is closed, and the loop stability is quickened;
4. during the S-phase comparison: the switch A and the switch B are disconnected, the comparator works in an open-loop state, and the count value when the comparator turns over is S_data=default+dark pixel signals;
5. the counter output value cds=s_data-r_data=the dark pixel signal value, converted by the digital module, is a dark level value Δv, and the dark level signal is fed back to the reference voltage generator by the digital module.
FIG. 5 is a timing diagram of an effective pixel row period according to the present invention. When reading the effective pixel signal, the functional actions of the structure include:
1. during the R-phase reference voltage setting: the switch B is closed, so that V_RP2=V+DeltaV is realized, meanwhile, the switch A is closed, the loop is quickened to be stable, the voltage of an output slope signal V_RP1 is kept unchanged during the period, the potential of a left polar plate of the capacitor C0 is not changed, and the influence of V_RP1 on V_RP2 is 0;
2. during the R-phase comparison: the switch A and the switch B are opened, the comparator works in an open loop state, during the period V_RP1 starts to generate a slope action, V=Q/C is not equal to 0, and V_RP2=V_RP 1 is not equal to C 0 /(C in +C 0 ) Wherein C in The equivalent capacitance of the non-inverting input end of the comparator to the ground is represented, and the count value of the comparator when the comparator turns over is R_data=default+DeltaV;
3. during the S-stage reference voltage setting: the switch B is closed, so that V_RP 2=V, and meanwhile, the switch A is closed, and loop stability is quickened;
4. during the S-phase comparison: the switch A and the switch B are disconnected, the comparator works in an open-loop state, and the count value when the comparator turns over is S_data=default+dark pixel signal+effective pixel signal;
5. the counter output value cds=s_data-r_data=effective pixel signal value, which is directly output via the output module.
The invention sets the reference voltage by carrying the reference voltage regulating circuit, so that the ramp signal can deviate up and down at the input end of the comparator, and introduces the dark level deviation into the R section of the effective pixel row period by utilizing the characteristic, and then subtracts the counter count value of the comparator when the comparator is turned for the first time (R section) from the counter count value of the comparator when the comparator is turned for the second time (S section), thereby eliminating the dark level.
Example 2
Corresponding to the dark level correction structure of the image sensor in embodiment 1, the present embodiment provides a dark level correction method of the image sensor, which reads dark pixel signals first, then reads effective pixel signals, and the amount of the read dark level signals is automatically subtracted by analog comparison operation when the effective pixels are read, so that the whole frame is not required to be read completely, and then the dark level correction is performed, thereby reducing the processing time. Fig. 6 is a flowchart of a method for correcting a dark level of an image sensor according to the present embodiment. As shown, the dark level correction method includes the steps of:
s1, reading voltage values of a pixel signal and a ramp signal, and inputting the voltage values into a comparator;
specifically, the pixel signal is a dark pixel signal or an effective pixel signal, the operation period of the dark pixel signal is a dark pixel line period, the operation period of the effective pixel signal is an effective pixel line period, one dark pixel line period is arranged, the number of the effective pixel line periods is multiple, the dark pixel line signal is read firstly, and then the effective pixel line signal is read;
s2, setting a reference voltage when the dark pixel line is periodic, and outputting a CDS value of a dark pixel signal after the comparator is turned over twice;
specifically, the digital-to-analog converter sets 2 reading phases, namely an R phase and an S phase; when a dark pixel row signal is input, a reference voltage generator firstly provides a voltage with a voltage value of Vref in an R phase, and after a comparison period is entered, a counter value corresponding to the first overturn of a comparator is R_data;
the S-stage reference voltage generator provides Vref voltage again, after the period of entering the comparator, the counter value corresponding to the second overturn of the comparator is S_data, the final output value CDS=S_data-R_data, and the signal is a dark pixel signal;
s3, the digital module converts the output value of the step S2 into a level value delta V and feeds back the dark level signal to the reference voltage generator;
s4, when the effective pixel line period is shortened, setting the reference voltage again, and outputting a CDS value of the effective pixel signal after the comparator is turned over twice;
specifically, when an effective pixel row signal is input, the reference voltage generator provides a voltage with a voltage value of Vref+DeltaV in the R phase, and after a comparison period is entered, the count value of the comparator when the comparator turns over for the first time is R_data;
the S-stage reference voltage generator provides voltage with the voltage value of Vref again, after the comparison period is entered, the value of the comparator is S_data when the comparator turns over for the second time, the final output value is CDS=S_data-R_data, and the signal is an effective pixel signal;
s5, the digital module directly outputs the effective pixel signals in the step S4 through the output module.
Hereinafter, the terms "comprises" or "comprising" as may be used in various embodiments of the present invention indicate the presence of inventive functions, operations or elements, and are not limiting of the addition of one or more functions, operations or elements. Furthermore, as used in various embodiments of the invention, the terms "comprises," "comprising," and their cognate terms are intended to refer to a particular feature, number, step, operation, element, component, or combination of the foregoing, and should not be interpreted as first excluding the existence of or increasing likelihood of one or more other features, numbers, steps, operations, elements, components, or combinations of the foregoing.
The terminology used in the various embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the various embodiments of the invention. As used herein, the singular is intended to include the plural as well, unless the context clearly indicates otherwise. Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which various embodiments of the invention belong. The terms (such as those defined in commonly used dictionaries) will be interpreted as having a meaning that is the same as the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein in connection with the various embodiments of the invention.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The foregoing description of the embodiments has been provided for the purpose of illustrating the general principles of the invention, and is not meant to limit the scope of the invention, but to limit the invention to the particular embodiments, and any modifications, equivalents, improvements, etc. that fall within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (5)
1. An image sensor dark level correction structure, comprising: the pixel module (11), the digital-to-analog converter (12), the reference voltage generator (13), the comparator (14), the counter (15), the digital module (16), the output module (17), the switch A and the switch B;
the switch A is arranged in the comparator (14);
the output end of the pixel module (11) is connected with the negative phase input end of the comparator (14), the output end of the digital-to-analog converter (12) is connected with the positive phase input end of the comparator (14), the output end of the reference voltage generator (13) is connected with the positive phase input end of the comparator (14), the counter (15), the digital module (16) and the output module (17) are sequentially connected, and the digital module (16) is connected with the input end of the reference voltage generator (13);
the comparator (14) comprises an input stage (141) whose structure comprises: p-channel transistors MP1, MP2, N-channel transistors MN1, MN2, current source I and switch a;
the grid electrode of the MN1 is connected with the input end of the slope signal, the drain electrode of the MN1 is connected with the drain electrode of the MP1, the source electrode of the MN1 is connected with the source electrode of the MN2, the common end of the source electrode of the MN1 and the source electrode of the MN2 is connected with the current source I, the grid electrode of the MN2 is connected with the input end of the pixel signal, the drain electrode of the MN2 is connected with the drain electrode of the MP2,
the source electrode of the MP2 is connected with the source electrode of the MP1, the grid electrode of the MP2 is connected with the grid electrode of the MP1, and the drain electrode of the MP1 is connected with the common end of the MP1 grid electrode and the MP2 grid electrode;
one end of the switch A is connected with the common end of the drain electrode of the MP1 and the drain electrode of the MN1, and the other end of the switch A is connected with the common end of the drain electrode of the MP2 and the drain electrode of the MN 2;
one end of the switch B is connected with the output end of the reference voltage generator (13), and the other end of the switch B is connected with the non-inverting input end of the comparator (14).
2. An image sensor dark level correction method based on the image sensor correction structure of claim 1, characterized in that the correction method comprises:
s1, reading voltage values of a pixel signal and a ramp signal, and inputting the voltage values into a comparator;
the pixel signals are dark pixel signals or effective pixel signals, the operation period of the dark pixel signals is a dark pixel line period, the operation period of the effective pixel signals is an effective pixel line period, one dark pixel line period is arranged, the number of the effective pixel line periods is multiple, the dark pixel line signals are read firstly, and then the effective pixel line signals are read;
s2, setting a reference voltage when the dark pixel line is periodic, and outputting a CDS value of a dark pixel signal after the comparator is turned over twice;
s3, the digital module converts the output value of the step S2 into a level value delta V and feeds back the dark level signal to the reference voltage generator;
s4, when the effective pixel line period is shortened, setting the reference voltage again, and outputting a CDS value of the effective pixel signal after the comparator is turned over twice;
s5, the digital module directly outputs the effective pixel signals in the step S4 through the output module.
3. The method for correcting the dark level of an image sensor according to claim 2, wherein the step S2 is specifically implemented by:
s2.1, setting a reference voltage at an input end of a comparator as Vref in an R phase of a digital-to-analog converter in a dark pixel row period, and setting a count value corresponding to the first overturn of the comparator as R_data after the comparison period is entered;
s2.2, a dark pixel row period, the reference voltage at the input end of the comparator is set as Vref again in the S stage of the digital-to-analog converter, after the period of the comparator is entered, the count value corresponding to the second overturn of the comparator is S_data, and finally the CDS=S_data-R_data is output, wherein the signal is a dark pixel signal.
4. The method for correcting the dark level of an image sensor according to claim 2, wherein the step S4 is specifically implemented by:
s4.1, an effective pixel row period, wherein a reference voltage at an input end of a comparator is raised to Vref+DeltaV in a digital-to-analog converter R stage, and after a comparison period is entered, a count value of the comparator is R_data when the comparator turns for the first time;
s4.2, the period of the effective pixel row, the reference voltage of the input end of the comparator is set as Vref in the S stage of the digital-to-analog converter, after the comparison period is entered, the value of the comparator is S_data when the second time of turnover occurs, the final output value is CDS=S_data-R_data, and the signal is an effective pixel signal.
5. An image sensor pixel unit based on the image sensor dark level correction method according to any one of claims 2-4, characterized in that the pixel unit is composed of a matrix of M rows and N columns of pixels, wherein the first row is a dark pixel row subjected to a shading treatment, and the remaining M-1 rows are effective pixel rows.
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