CN114204240A - Vertical transition structure of broadband in multilayer microwave board - Google Patents
Vertical transition structure of broadband in multilayer microwave board Download PDFInfo
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- CN114204240A CN114204240A CN202111576903.0A CN202111576903A CN114204240A CN 114204240 A CN114204240 A CN 114204240A CN 202111576903 A CN202111576903 A CN 202111576903A CN 114204240 A CN114204240 A CN 114204240A
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- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
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Abstract
The invention designs a vertical transition structure of a broadband in a multilayer microwave board, which comprises the multilayer microwave PCB board, wherein the multilayer microwave PCB board is provided with a surface layer 50 ohm transmission line, a first impedance matcher, a second impedance matcher, a vertical transition through hole matching hole disc, a vertical transition through hole, a 50 ohm microstrip line shielding hole, a first avoidance interval, a second avoidance interval and a similar coaxial through hole, the 50 ohm transmission line is connected with the first impedance matcher, the second impedance matcher and the vertical transition through hole matching hole disc, microwave signals are transmitted through the vertical transition through hole and an intermediate layer in the multilayer microwave PCB, and the broadband and low insertion loss can be realized by introducing the multistage matcher and the matching hole disc.
Description
Technical Field
The invention relates to the technical field of vertical interconnection of microwave transmission lines and devices, in particular to a vertical transition structure of a broadband in a multilayer microwave board.
Background
In recent years, wireless communication technology has advanced toward the microwave field, and low-loss, broadband connections between microwave devices or transmission lines have been the subject of intense research. With the increasingly clear requirements on low cost and miniaturization, it is important to find an interconnection structure with low insertion loss, easy processing and high reliability.
In the microwave field, the appearance of the multilayer microwave board solves the existing difficulty, in view of the above, the invention aims to overcome the existing defects, and provides a vertical transition structure of a broadband in the multilayer microwave board.
Disclosure of Invention
In order to achieve the purpose, the invention adopts the following structural scheme: the utility model provides a vertical transition structure of broadband among multilayer microwave board, includes multilayer microwave PCB board, there are 50 ohm transmission lines on the top layer, first impedance matcher, second impedance matcher, vertical transition through-hole matching hole dish, vertical transition through-hole, 50 ohm microstrip line shielding hole, first dodge the interval, the interval is dodged to the second on the multilayer microwave PCB board, and the similar coaxial through-hole, 50 ohm transmission line connection first, second impedance matcher and vertical transition through-hole matching hole dish transmit microwave signal through the intermediate level in vertical transition through-hole and the multilayer microwave PCB.
In the multilayer microwave PCB, the number of layers of the multilayer microwave PCB is n, n is an even number which is more than or equal to 2, and the dielectric material of the PCB is not limited.
After the multilayer microwave PCB dielectric material of the 50 ohm transmission line is determined, the width of the multilayer microwave PCB dielectric material is a fixed value, the width of the 50 ohm transmission line can be determined through a characteristic impedance calculation formula, signals can be transmitted with the maximum efficiency in the microwave field, the loss of the transmitted signals is the minimum, and the reflection is the minimum.
Above-mentioned first impedance matcher, second impedance matcher, after the number of piles of vertical transition transmission is confirmed, there is the mismatching situation in the impedance among the signal transmission process, first impedance matcher width is less than 50 ohm transmission line width, be the inductance in the microwave field equivalence, second impedance matcher width is greater than 50 ohm transmission line width, be the electric capacity in the microwave field equivalence, first impedance matcher and second impedance matcher are established ties and are equivalent to series connection LC interstage matching circuit, can make transmission bandwidth bigger like this, also can filter outband stray and unnecessary signal simultaneously.
The vertical transition through hole matching hole disc is provided with a circle of transmission lines around the through hole, so that the purpose of impedance matching can be achieved, the transmission bandwidth is increased, and the transmission loss is reduced.
The vertical transition through hole can be connected with signals of different layers of the multilayer PCB, and plays a role in connecting the signals.
The 50 ohm microstrip line shielding hole can enable the 50 ohm transmission line to be well bound by an electromagnetic field.
The first avoidance interval and the second avoidance interval are a certain safe interval between the microwave transmission line and the ground, and can effectively shield other interference signals.
The coaxial through holes surround the vertical transition through hole, are similar to coaxial structures, and have good constraint on microwave signals.
By adopting the structural scheme, the invention can achieve the following beneficial effects:
(1) the microwave frequency band multi-layer inter-plate signal transmission device adopts a series connection structure of the first impedance matcher, the second impedance matcher and the vertical transition through hole matching plate, can be equivalent to a traditional LC circuit structure, can well reduce the transmission loss of microwave signals through three-level matching series connection, and can widen the working bandwidth, and the vertical transition structure can be well suitable for signal transmission among the microwave frequency band multi-layer plates;
(2) the width of the 50 ohm microstrip line adopted in the application is a determined value, the width of the 50 ohm transmission line can be determined through a characteristic impedance calculation formula, and the design principle of 50 ohm;
(3) multilayer microwave PCB board in this application, the multilayer microwave PCB board number of piles is n layer, and n is more than or equal to 2's even number, and PCB's dielectric material accords with the design principle of multilayer microwave board for being applicable to microwave transmission simultaneously.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below.
FIG. 1 is a top view of a broadband vertical transition structure in a multi-layer microwave board according to the present invention;
FIG. 2 is a front view of a broadband vertical transition structure in a multi-layer microwave board according to the present invention.
Detailed Description
In order to make the objects, structural solutions and advantages of the present invention clearer, the structural solutions of the present invention will be described in detail below. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the examples given herein without any inventive step, are within the scope of the present invention.
The following describes a specific broadband vertical transition structure in a multi-layer microwave board provided in an embodiment of the present application with reference to the drawings.
FIG. 1 is a top view of a broadband vertical transition structure in a multi-layer microwave board according to the present invention. Including multilayer microwave PCB board 2, there are 50 ohm transmission lines on top layer 10, first impedance matcher 8, second impedance matcher 3, vertical transition through-hole matching hole dish 4, vertical transition through-hole 7, 50 ohm microstrip line shielding hole 1, first dodge interval 9, the second dodges interval 5 on the multilayer microwave PCB board 2, and class coaxial through-hole 6, 50 ohm transmission line connection first, second impedance matcher and vertical transition through-hole matching hole dish transmit microwave signal through the intermediate level in vertical transition through-hole and the multilayer microwave PCB.
FIG. 2 is a front view of a broadband vertical transition structure in a multi-layer microwave board according to the present invention. The multilayer microwave PCB comprises a dielectric material 11, a bonding medium 12 and a dielectric material 13, wherein a transmission line 15 is arranged on the surface layer, a transmission line 16 on the bottom layer and a vertical transition through hole 14 are connected with the transmission line 15 and the transmission line 16 through the vertical transition through hole 14, so that signal transmission between different layers is realized.
Specifically, first impedance matcher, second impedance matcher and vertical transition through-hole matching hole disc structure in this application, like first impedance matcher 8, second impedance matcher 3 and vertical transition through-hole matching hole disc 4 in fig. 1, can be equivalent to traditional LC circuit structure, the transmission loss of reduction microwave signal that tertiary matching series connection can be fine widens the operating bandwidth, such vertical transition structure can be fine be applicable to microwave frequency channel multiple layer inter-plate signal transmission.
The transmission lines 15 and 16 comprise a 50-ohm transmission line 10 which is connected in series with the first impedance matcher 8, the second impedance matcher 3 and the vertical transition through hole matching hole disc 4.
From the above, the low noise amplifier provided by the present invention is an amplifier capable of filtering stray signals when operating in the W band, and compared with the conventional low noise amplifier, the low noise amplifier provided by the present invention solves the problems of large LC area and high cost. The method can be widely applied to occasions such as an active phased array radar, a multi-channel communication system, a W-band transceiver system and the like.
In summary, the present invention provides a vertical transition structure of a broadband in a multi-layer microwave board, which connects different layers of signals in the multi-layer microwave board through a multi-stage matching circuit and a vertical transition via hole, so as to implement low insertion loss of signals and broadband transmission.
It is to be understood that the system embodiments provided above correspond to the method embodiments described above, and corresponding specific contents may be referred to each other, which are not described herein again.
The above description is only an embodiment of the present invention, but the scope of the present invention is not limited thereto, and the scope of the present invention should be subject to the scope of the claims.
Claims (9)
1. A broadband vertical transition structure in a multi-layer microwave board, comprising: the microwave signal transmission device comprises a multilayer microwave PCB, wherein a 50-ohm transmission line on the surface layer, a first impedance matcher, a second impedance matcher, a vertical transition through hole matching hole disc, a vertical transition through hole, a 50-ohm microstrip line shielding hole, a first avoidance interval, a second avoidance interval and a similar coaxial through hole are arranged on the multilayer microwave PCB, and the 50-ohm transmission line is connected with the first impedance matcher, the second impedance matcher and the vertical transition through hole matching hole disc to transmit microwave signals through the vertical transition through hole and an intermediate layer in the multilayer microwave PCB.
2. A multi-layer microwave PCB panel as claimed in claim 1, wherein: the multilayer microwave PCB has n layers, wherein n is an even number greater than or equal to 2, and the dielectric material of the PCB is suitable for microwave frequency bands.
3. The 50 ohm transmission line of claim 1 wherein: after the dielectric material of the multilayer microwave PCB is determined, the width of the dielectric material is a fixed value, the width of a 50-ohm transmission line can be determined through a characteristic impedance calculation formula, signals can be transmitted with maximum efficiency in the microwave field, the loss of the transmission signals is minimum, and the reflection is minimum.
4. The first impedance matcher and the second impedance matcher of claim 1, wherein: after the number of layers of vertical transition transmission is determined, impedance is mismatched in the signal transmission process, the width of the first impedance matcher is smaller than the width of a 50-ohm transmission line, the first impedance matcher is equivalent to inductance in the microwave field, the width of the second impedance matcher is larger than the width of the 50-ohm transmission line, the second impedance matcher is equivalent to capacitance in the microwave field, the first impedance matcher and the second impedance matcher are connected in series to be equivalent to a series LC interstage matching circuit, so that the transmission bandwidth can be larger, and out-of-band stray and useless signals can be filtered.
5. The vertical transition via mating hole tray of claim 1, wherein: a circle of transmission line around the through hole can achieve the purpose of impedance matching and increase the transmission bandwidth.
6. The vertical transition via of claim 1, wherein: the signal of different layers of the multilayer PCB can be connected, and the signal connecting function is achieved.
7. The 50 ohm microstrip line shielded via of claim 1, wherein: the 50 ohm transmission line can be well bound by an electromagnetic field.
8. The first avoidance interval, the second avoidance interval, according to claim 1, characterized in that: certain safe interval between microwave transmission line and ground can shield other interfering signal effectively.
9. The coaxial-like via of claim 1, wherein: the through hole surrounds the vertical transition through hole, and is similar to a coaxial structure, so that microwave signals are well bound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111576903.0A CN114204240A (en) | 2021-12-22 | 2021-12-22 | Vertical transition structure of broadband in multilayer microwave board |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111576903.0A CN114204240A (en) | 2021-12-22 | 2021-12-22 | Vertical transition structure of broadband in multilayer microwave board |
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| CN114204240A true CN114204240A (en) | 2022-03-18 |
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| CN202111576903.0A Pending CN114204240A (en) | 2021-12-22 | 2021-12-22 | Vertical transition structure of broadband in multilayer microwave board |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115224462A (en) * | 2022-09-20 | 2022-10-21 | 成都瑞迪威科技有限公司 | Microwave multilayer board interlayer interconnection matching method |
| CN116722335A (en) * | 2023-08-09 | 2023-09-08 | 成都华兴大地科技有限公司 | Vertical transition structure and application |
-
2021
- 2021-12-22 CN CN202111576903.0A patent/CN114204240A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115224462A (en) * | 2022-09-20 | 2022-10-21 | 成都瑞迪威科技有限公司 | Microwave multilayer board interlayer interconnection matching method |
| CN116722335A (en) * | 2023-08-09 | 2023-09-08 | 成都华兴大地科技有限公司 | Vertical transition structure and application |
| CN116722335B (en) * | 2023-08-09 | 2023-10-27 | 成都华兴大地科技有限公司 | Vertical transition structure and application |
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