CN114203837B - Photon screening type terahertz phototransistor and multi-photon detection method thereof - Google Patents
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Abstract
The invention relates to a photon screening terahertz phototransistor and a multiphoton detection method thereof, comprising a coupling grating layer, a photosensitive floating gate layer and a channel layer which are arranged oppositely from top to bottom in sequence, wherein the coupling grating layer comprises a plurality of sub gratings for coupling and enhancing terahertz photons of different targets, the photosensitive floating gate layer is used for correspondingly absorbing photons which are coupled and enhanced by a sub grating structure so as to change electrochemical potential and further change conductivity of the channel layer, one end of the channel layer is connected to a source electrode, and the other end of the channel layer is connected to a drain electrode. The coupling grating layer screens and distinguishes different terahertz photons in space in the super cell period of the coupling grating layer, and then the coupling grating layer is coupled to the corresponding terahertz photosensitive floating gate region, and optical signals corresponding to different photons are read out according to the source leakage current of the phototransistor. Compared with the prior art, the invention can break through the limit that the detection efficiency of each single photon is less than 1/n, and realize the purpose of multi-photon synchronous high-sensitivity detection.
Description
Technical Field
The invention relates to the technical field of terahertz multi-photon detection, in particular to a photon screening terahertz phototransistor and a multi-photon detection method thereof.
Background
The research of the terahertz high-sensitivity multi-photon detector has very important significance for expanding the application of the terahertz detector. The quantum well terahertz detector has the advantages of good stability, high corresponding speed, easiness in manufacturing a large planar array and the like, and has become a research hot spot in the field of terahertz detectors in recent years. However, the conventional semiconductor quantum well terahertz detector does not have an optical gain function, and thus has poor optical response, and its application is greatly limited. Moreover, with the continuous development of semiconductor technology, the narrow-band detector for single terahertz photons cannot meet more functional requirements, and how to synchronously and highly sensitively detect multiple different terahertz photons in an incident beam is a leading-edge problem which is long pursued in the field and faces serious challenges.
Conventionally, in order to detect multiple photons in an incident beam, the incident beam must be spatially split, i.e., different photons are split into different spatial regions by techniques such as diffraction gratings, and then a dedicated detector unit is designed for each single photon. However, the dispersion and splitting scheme can not be realized on a monolithically integrated detector only by being matched with a plurality of space optical elements, which not only seriously affects the convenience of application, but also makes it more difficult to realize the synchronous and accurate calibration of multiple optical paths for different photons in applications such as confocal microscopes with strict requirements on the accuracy of optical path calibration. Thus, monolithically integrated multiphoton detection is a necessary trend in this field of development.
The existing monolithic integrated multiphoton detection technology mainly adopts a method based on filtering light splitting, namely an incident light beam irradiates on a monolithic integrated array detector containing a plurality of pixels, and different filtering materials or grating structures are adopted at different pixels, so that only one of target photons is detected by the different pixels. However, this approach loses incident photons of wavelengths other than the target photon at each detection pixel, which makes the monolithically integrated array detection device as a whole less efficient in multiphoton detection. Such as: in the detection of n different photons, assuming that the area of a detection pixel of each photon is a, the total detection area is na, and the incident beam should not be smaller than na, and the theoretical maximum detection efficiency limit for each photon is 1/n. Furthermore, since the photosensitive detection areas for different photons are spatially dispersed, it is also difficult to perform accurate optimization of the spatial light path for different photons in applications requiring accurate light paths. To achieve multiphoton detection in a single region, the prior art implements a method for switching detection of photons of two wavelengths by switching the semiconductor band structure using the same broadband response grating, however, the method must detect two photons differently in time sequence, i.e. only λ 1 photons can be detected in period t 1 (or λ 2 photons can be detected in period t 2), so that simultaneous incident λ 2 photons must be lost in period t 1 (or simultaneous incident λ 1 photons are lost in period t 2), which indicates that the method is also limited to an upper limit of effective detection efficiency of 1/n for each detected photon.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a photon screening terahertz phototransistor and a multiphoton detection method thereof, so that the limit that the detection efficiency of each single photon is less than 1/n can be broken through, and the aim of multiphoton synchronous high-sensitivity detection can be realized.
The aim of the invention can be achieved by the following technical scheme: the utility model provides a photon screening formula terahertz phototransistor, includes from top to bottom relative coupling grating layer, photosensitive floating gate layer and the channel layer that sets gradually, coupling grating layer includes a plurality of sub-gratings that are used for coupling reinforcing different target terahertz photons, photosensitive floating gate layer is used for corresponding absorption through the photon after sub-grating structure coupling reinforcing to change electrochemical potential, and then change the electric conductance of channel layer, the one end of channel layer is connected to the source electrode, the other end of channel layer is connected to the drain electrode.
Further, the coupling grating layer specifically adopts a periodic metamaterial structure with a multi-period characteristic.
Further, different sub-gratings in the coupling grating layer are respectively and correspondingly applied with reset electric pulse signals with different time sequences.
Further, the photosensitive floating gate layer is positioned in a near field range right below the coupling grating layer so as to be capable of directly absorbing photons with enhanced coupling of the corresponding sub-gratings.
Further, the photosensitive floating gate layer comprises a plurality of photo-transistor floating gates corresponding to different sub-gratings, and the plurality of photo-transistor floating gates are mutually and electrically isolated.
Further, the source electrode and the drain electrode are both composite metal electrodes.
Further, a capacitive coupling relationship is formed between the photosensitive floating gate layer and the channel layer.
A multi-photon detection method of a photon screening terahertz phototransistor comprises the following steps:
S1, designing and constructing a super-cell grating structure with a plurality of sub-gratings according to the detection requirement of multi-target photons to obtain a coupling grating layer;
s2, designing and constructing a plurality of phototransistor floating gates which are matched with the plurality of sub-gratings and have response capability corresponding to terahertz wave bands, so as to obtain a photosensitive floating gate layer;
s3, arranging the coupling grating layer and the photosensitive floating gate layer correspondingly up and down, arranging a channel layer below the photosensitive floating gate layer, and respectively connecting two ends of the channel layer with a source electrode and a drain electrode to manufacture a monolithically integrated photon screening terahertz phototransistor structure;
s4, externally connecting the source electrode and the drain electrode with an ammeter, and detecting the current of the passage while connecting the potential to the source electrode;
respectively applying reset electric pulse signals with different time sequences to the plurality of sub-gratings;
And acquiring signal intensities of a plurality of different photons according to synchronous changes of currents on the source electrode and the drain electrode.
Further, the step S1 is specifically to use an electromagnetic field numerical calculation simulation method to design a supercell grating structure with a plurality of sub-gratings, where the electromagnetic field numerical calculation simulation method includes a finite time domain difference method and a finite element method.
Further, the step S2 is specifically to use a semiconductor band engineering design method to design a plurality of phototransistor floating gates.
Compared with the prior art, the multi-photon screening method is adopted, the coupling grating layer with the photon screening function is arranged, incident multi-photons can be coupled simultaneously and compressed to different sub-grating near-field ranges respectively, then the coupling grating layer is directly coupled with the photosensitive floating gate layer and is efficiently absorbed by the photosensitive floating gate layer, the potential of the photosensitive floating gate layer changes after absorbing the photons, and the optical signal intensity is further reflected in the current signal of the channel layer through the transconductance effect. Therefore, the invention comprehensively utilizes the high-efficiency multi-photon coupling and screening efficiency of the grating structure and the transconductance photoelectric gain function of the phototransistor, realizes the high-efficiency high-sensitivity synchronous detection of multi-photons in a single pixel area, breaks through the limit that the detection efficiency of each single photon is less than 1/n, has the advantage of no need of light splitting, can simultaneously carry out the multi-photon detection device in the same photosensitive detection area, and does not need to carry out independent light path calibration on multiple photons in application.
In addition, the photosensitive floating gate layer is constructed by adopting the phototransistor structure with the transconductance amplification function, so that the multiphoton photoelectric gain amplification function can be realized simultaneously, and the multiphoton synchronous high-sensitivity detection of single pixels can be realized; the invention adopts the existing mature material and device technology, and can effectively realize the single-chip integrated multiphoton single-pixel detection device.
Drawings
Fig. 1 is a schematic structural diagram of a photonic screening terahertz phototransistor according to an embodiment one;
FIG. 2 is a typical spectral response of a photon-screening grating according to the first embodiment;
FIG. 3 is a near field light field distribution of a photon screening grating according to a first embodiment;
FIG. 4 is a schematic view of a photon-screening grating with isolation grating in a second embodiment;
FIG. 5 is a schematic diagram of a two-dimensional photon-screening grating structure in a third embodiment;
The figure indicates: 100. the photons lambda 1 correspond to the sub-gratings 101, lambda 2 correspond to the sub-gratings 200, lambda 1 correspond to the photo-transistor floating gate, 201, lambda 2 correspond to the photo-transistor floating gate, 300, the photo-transistor channel, 301, the photo-transistor source, 302, the photo-transistor drain, 400, lambda 1 correspond to the sub-grating reset electrical pulse, and 401, lambda 2 correspond to the sub-grating reset electrical pulse.
Detailed Description
The invention will now be described in detail with reference to the drawings and specific examples.
Example 1
As shown in fig. 1, a photonic screening terahertz phototransistor includes a coupling grating layer (composed of a lambda 1 photon corresponding sub-grating 100 and a lambda 2 photon corresponding sub-grating 101), a photosensitive floating gate layer (composed of a lambda 1 photon corresponding phototransistor floating gate 200 and a lambda 2 photon corresponding phototransistor floating gate 201) and a channel layer (composed of a phototransistor channel 300, a phototransistor source 301 and a phototransistor drain 302) which are disposed opposite to each other from top to bottom, wherein the upper coupling grating layer includes sub-grating structures (100 and 101) capable of coupling two target terahertz photons (lambda 1 photons and lambda 2 photons) to respectively couple and enhance near field light fields of different photons; the middle photosensitive floating gate layers (200 and 201) have photosensitive characteristics corresponding to the coupling sub-gratings, and electrochemical potential changes after corresponding photons are absorbed, so that the conductivity of the lower channel layer is changed through transconductance effect; one end of the lower channel layer (300) is connected to the source electrode (301), and the other end of the lower channel layer (300) is connected to the drain electrode (302).
In practical application, the metal coupling grating layer adopts a periodic metamaterial structure with multi-period characteristics, different photons can be screened and spatially distinguished, so that the near field enhancement of photons (lambda 1) concentrated in a sub-grating (100) region and the near field enhancement of photons (lambda 2) concentrated in a sub-grating (101) region are realized, the metamaterial coupling grating with a supercell structure is adopted, the light field enhancement effect of different photons in different regions in the supercell period after being coupled with incident photons is utilized, the effective absorption cross section of a device is obviously increased, the complexity of traditional off-chip light splitting and the detection efficiency loss caused by filtering type light splitting are overcome, and meanwhile, the ideal detection performance for multiple photons is realized;
The middle photosensitive floating gate layers (200 and 201) are positioned in the near field range under the sub-gratings (100 and 101) and can directly absorb photons (lambda 1 and lambda 2) with enhanced coupling of the gratings (100 and 101), and the electric potential of the photosensitive floating gate layers (200 and 201) is changed after light absorption;
the middle photosensitive floating gate layers (200 and 201) and the lower channel (300) form a transistor device structure and have good transconductance amplification effect;
The lower channel layer (300) is respectively connected with the source electrode (301) and the drain electrode (302), the source electrode (301) and the drain electrode (302) are composite metal electrodes, the current passing through the source electrode (301) and the drain electrode (302) can be directly measured, and the potential change after light absorption of the photosensitive floating gate layers (200 and 201) can change the current passing through the source electrode (301) and the drain electrode (302) through the transconductance effect of the transistor structure;
the photo-generated carriers present in the photosensitive floating gate layers (200 and 201) can be reset and initialized by the electric pulses (400 and 401) applied to the sub-gratings (100 and 101), and the corresponding optical signal intensity can reflect the variation amplitude of the current of the source (301) and the drain (302) before and after the reset.
The embodiment applies the photon screening terahertz phototransistor to carry out multiphoton detection, and mainly comprises the following steps:
Firstly, designing a super-cellular grating structure with a plurality of corresponding sub-grating structures according to target multiphoton, wherein the design method specifically comprises electromagnetic field numerical calculation simulation, including a finite time domain difference method and a finite element method;
Then designing a photosensitive floating gate structure matched with the grating and having response capability corresponding to terahertz wave bands, and manufacturing a monolithically integrated photon screening terahertz phototransistor device structure, wherein the design method specifically adopts a semiconductor energy band engineering design method;
Finally, externally connecting an ammeter with the source electrode and the drain electrode, and detecting the current of the passage while connecting the potential with the source electrode; by controlling the output of the electric pulse generator, reset pulses (400 and 401) with different time sequences are respectively applied to the sub-gratings (100 and 101), and the signal intensity of corresponding photons (lambda 1 and lambda 2) can be read out according to the synchronous change of the current of the source electrode (301) and the drain electrode (302).
In this embodiment, the coupling grating layer (100 and 101 in fig. 1) has the spectral response shown in fig. 2, and can realize the function of photon screening of the incident beam (λ 1、λ2), that is, the function of screening and compressing the photons of λ 1 to the vicinity of the sub-beam 100, and the function of screening and compressing the photons of λ 2 to the vicinity of the sub-beam 101, where the optical field distribution is shown in fig. 3. The arrow mark in the structural diagram of fig. 3 is the region of light field enhancement, the field distribution diagram shows the spatial distribution of the E z component of the electric field simulated by the finite time domain difference method, and it can be seen from the figure that the lambda 1 photons are mainly distributed under the sub-grating 100 after being screened, and the lambda 2 photons are mainly distributed under the sub-grating 101 after being screened.
In this embodiment, the metal coupling gratings 100 and 101 are 5nm Ti/100nm Au composite layers, and the grating structure parameters are (as shown in FIG. 1): w 1 =1.0 μm (sub-grating 100 width), W 2 =1.6 μm (sub-grating 101 width); the period between the sub-gratings 101 is D 1 =4.5μm, and the center-to-center spacing of the sub-gratings 100 and 101 is D 2 =3 μm and D 3 =1.5 μm, respectively;
The metal coupling gratings 100 and 101 are positioned at the position of 100nm above the floating gate layers 200 and 201, the floating gate layers 200 and 201 are 7nm gallium arsenide quantum well layers, and the electrical isolation between adjacent floating gates can be realized by wet etching and dry etching;
the floating gate layers 200 and 201 are positioned at a position 100nm above the channel layer 300, form capacitive coupling with the channel and have a transconductance amplifying function;
The coupling grating layer, the floating gate layer and the channel layer are formed by an AlGaAs barrier layer.
In the embodiment, only two photons of lambda 1 photons and lambda 2 photons are detected, and in practical application, more different target photons can be detected, so that the technical scheme can be known to comprise a coupling grating layer, a photosensitive floating gate layer and a channel layer which are oppositely arranged up and down, wherein the coupling grating layer on the upper layer comprises a sub-grating structure capable of coupling multiple target terahertz photons, and can respectively couple and enhance the near field light fields of different photons; this process can be seen as the multiple photons (lambda 1、λ2、…、λn) in the incident beam being automatically screened and compressed into the respective sub-grating regions, since each sub-grating structure has sub-wavelength characteristics (i.e. linewidth < wavelength), its effective detection cross-sectional area (sigma Effective and effective ) for the target photon is no longer limited by the geometrical area of the sub-grating itself (sigma Geometry of ), but rather amplified by the near field enhancement of the sub-grating (set enhancement factor kappa > 1), sigma Effective and effective ＝κσ Geometry of . In the optimally designed coupling grating with the multi-period structure, sigma Effective and effective can infinitely approach the photosensitive detection area of the detector, namely, the ideal detection efficiency approaching 100% is achieved for photons incident on the photosensitive detection area. It is particularly notable that this process and efficiency holds for each photon in the incident beam, so that ideal detection of nearly 100% detection efficiency for each photon can be achieved simultaneously, and is no longer limited by the upper 1/n detection efficiency limit of the disclosed technology.
The photosensitive floating gate layer in the middle layer has photosensitive characteristics corresponding to the coupling sub-grating, and electrochemical potential changes after absorbing corresponding photons, so that conductivity of the lower layer is changed through transconductance amplification effect.
One end of the channel layer of the lower layer is connected to the source electrode, the other end of the channel layer of the lower layer is connected to the drain electrode, respective light intensity information corresponding to multiple photons (lambda 1、λ2、…、λn) can be reflected by measuring currents of the source electrode and the drain electrode, pulse resetting operation can be carried out on different sub-grating structures for distinguishing signals for reading out different photons, and the light signal intensity of lambda i photons can be read according to synchronous change of currents of the source electrode and the drain electrode while pulse resetting is carried out on an ith sub-grating.
Example two
For realizing the electrical isolation between the floating gates of the various phototransistors in the photosensitive floating gate layer, for the structure of the first embodiment, the manner of cutting off the floating gate 200 and the floating gate 201 by capacitive coupling is adopted, as shown in fig. 4, by adopting an independent isolation gate and applying a direct current negative bias, the width of the independent isolation gate is about 100nm, and is far smaller than the line widths of the sub-gratings 100 and 101, so that the photonic screening function is not significantly affected.
Example III
In order to realize high-sensitivity detection of terahertz photons of 4 different target photons (lambda 1、λ2、λ3、λ4), a supercell mechanism is adopted in a planar two-dimensional scale, and each supercell comprises 4 resonance structures with different sizes (as shown in figure 5).
In summary, the technical scheme is applied to practice (such as microscope application), and only the whole incident beam is focused and collected, so that different photon compositions of the incident beam are not needed to be considered; and the optical signal intensity information corresponding to a plurality of photons can be respectively acquired from a single device in time sequence.
The photon screening terahertz phototransistor provided by the technical scheme can break through the defect that the detection efficiency of each single photon in the existing multiphoton detection technology is smaller than 1/n limit, and the multiphoton detection devices can be simultaneously carried out in the same photosensitive detection area without carrying out space light splitting in advance, and independent optical path optimization calibration on multiple photons is not needed in application; in addition, the phototransistor structure with the transconductance amplification function can simultaneously realize the multiphoton photoelectric gain amplification function, so that the multiphoton synchronous high-sensitivity detection of single pixels is realized; in the aspect of manufacturing process, mature material and device process can be adopted to realize the single-chip integrated multiphoton single-pixel detection device.
Claims (9)
1. The multi-photon detection method is applied to a photon screening type terahertz phototransistor and is characterized in that the photon screening type terahertz phototransistor comprises a coupling grating layer, a photosensitive floating gate layer and a channel layer which are arranged oppositely from top to bottom in sequence, the coupling grating layer comprises a plurality of sub gratings used for coupling and enhancing terahertz photons of different targets, the photosensitive floating gate layer is used for correspondingly absorbing photons which are coupled and enhanced by a sub grating structure so as to change electrochemical potential and further change conductivity of the channel layer, one end of the channel layer is connected to a source electrode, and the other end of the channel layer is connected to a drain electrode;
the multiphoton detection method includes the steps of:
S1, designing and constructing a super-cell grating structure with a plurality of sub-gratings according to the detection requirement of multi-target photons to obtain a coupling grating layer;
s2, designing and constructing a plurality of phototransistor floating gates which are matched with the plurality of sub-gratings and have response capability corresponding to terahertz wave bands, so as to obtain a photosensitive floating gate layer;
s3, arranging the coupling grating layer and the photosensitive floating gate layer correspondingly up and down, arranging a channel layer below the photosensitive floating gate layer, and respectively connecting two ends of the channel layer with a source electrode and a drain electrode to manufacture a monolithically integrated photon screening terahertz phototransistor structure;
s4, externally connecting the source electrode and the drain electrode with an ammeter, and detecting the current of the passage while connecting the potential to the source electrode;
respectively applying reset electric pulse signals with different time sequences to the plurality of sub-gratings;
And acquiring signal intensities of a plurality of different photons according to synchronous changes of currents on the source electrode and the drain electrode.
2. The method according to claim 1, wherein the coupling grating layer is a periodic metamaterial structure with a multi-period characteristic.
3. The method of claim 1, wherein the reset pulse signals with different timings are applied to different sub-gratings in the coupling grating layer.
4. The method of claim 1, wherein the photoactive gate layer is positioned in the near field immediately below the coupling grating layer to be able to directly absorb photons of enhanced coupling of the corresponding sub-grating.
5. A multiphoton detection method according to claim 1, wherein the photoactive floating gate layer comprises a plurality of phototransistor floating gates corresponding to different sub-gratings, the plurality of phototransistor floating gates being electrically isolated from each other.
6. A multiphoton detection method according to claim 1, wherein the source and the drain are both composite metal electrodes.
7. The method of claim 1, wherein the photosensitive floating gate layer and the channel layer form a capacitive coupling relationship.
8. The multi-photon detection method according to claim 1, wherein the step S1 is specifically to use an electromagnetic field numerical calculation simulation method to design a super-cellular grating structure having a plurality of sub-gratings, wherein the electromagnetic field numerical calculation simulation method includes a finite time domain difference method and a finite element method.
9. The method according to claim 1, wherein the step S2 is specifically a semiconductor band engineering design method to design a plurality of phototransistor floating gates.
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