CN114203675A - Shielding device and preparation method thereof - Google Patents
Shielding device and preparation method thereof Download PDFInfo
- Publication number
- CN114203675A CN114203675A CN202111351677.6A CN202111351677A CN114203675A CN 114203675 A CN114203675 A CN 114203675A CN 202111351677 A CN202111351677 A CN 202111351677A CN 114203675 A CN114203675 A CN 114203675A
- Authority
- CN
- China
- Prior art keywords
- atomic number
- layer
- base
- number layer
- upper cover
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title abstract description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 27
- 229910052721 tungsten Inorganic materials 0.000 claims description 27
- 239000010937 tungsten Substances 0.000 claims description 27
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 22
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- 238000007747 plating Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 6
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000011230 binding agent Substances 0.000 claims description 3
- 238000005219 brazing Methods 0.000 claims description 3
- 238000005266 casting Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 239000002270 dispersing agent Substances 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 230000004907 flux Effects 0.000 claims 2
- 238000005056 compaction Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 7
- 238000010030 laminating Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 73
- 239000000919 ceramic Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 10
- 238000004806 packaging method and process Methods 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 9
- 230000017525 heat dissipation Effects 0.000 description 7
- 238000001465 metallisation Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000007639 printing Methods 0.000 description 4
- 230000002787 reinforcement Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000003471 anti-radiation Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000010345 tape casting Methods 0.000 description 2
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000000342 Monte Carlo simulation Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to a shielding device and a preparation method thereof, the shielding device comprises a base (1), a side wall (2) and an upper cover (3), wherein the base (1), the side wall (2) and the upper cover (3) are formed by alternately laminating a high atomic number layer (4) and a low atomic number layer (5). The invention can enhance the radiation shielding effect and improve the heat conductivity.
Description
Technical Field
The invention relates to a shielding device and a preparation method thereof.
Background
With the rapid development of miniaturization and high integration of electronic devices and the continuous increase of output power of the devices, higher requirements are also put forward on the heat-conducting property of ceramic packages used for packaging the devices. The alumina ceramic substrate as a relatively mature packaging interconnection product has excellent thermal conductivity, and is generally about 30W/mK. However, for high power and high integration devices, the thermal conductivity of the devices still cannot meet the use requirement. In this regard, some techniques attempt to improve the heat dissipation performance of the package by using alumina ceramic plus tungsten copper base. Although some positive effects can be achieved by the method, the product structure of the method is equivalent to that of a ceramic base, and a metal base is additionally arranged, so that the volume of the device is seriously increased, and the trend of the device towards small volume is not facilitated. Meanwhile, the thermal expansion coefficient matching of the copper-based material and the silicon-based chip is relatively large, so that the reliability of the chip is influenced when the heat productivity of the device is increased.
In addition, in aerospace application, strict requirements are imposed on the anti-radiation index of the device, so the anti-radiation packaging and reinforcing technology is always a difficult point in aerospace application. In the prior art, research on radiation-resistant reinforcement technology of electronic components includes a series of processes from material selection to component structure, manufacturing process, circuit design, shielding and packaging inside the device. The technology of irradiation reinforcement by packaging is relatively effective for shielding high-energy electrons and protons in space irradiation environment, and particularly has obvious shielding effect on the electrons and protons in Van Allen irradiation band. The core of the radiation-resistant package reinforcement technology is proper shielding and physical isolation of the integrated circuit chip from the space radiation environment. Therefore, package reinforcement is a straightforward and effective way to extend the lifetime of a device. From the above, it is known that the aluminum nitride ceramic itself has excellent heat dissipation performance (thermal conductivity as high as 170W/mK or more), and the thermal expansion coefficient is close to that of the chip material, so that the two materials can be well matched. Therefore, the aluminum nitride ceramic material has good application prospect in the field of miniaturized high-integration high-power packaging, and can be used for preparing a packaging tube shell integrating radiation shielding and high heat dissipation performance in a manner of matching with an optimal process and a material.
Disclosure of Invention
The invention aims to provide a shielding device and a preparation method thereof.
In order to achieve the above purpose, the present invention provides a shielding device and a manufacturing method thereof, the device includes a base, a sidewall and an upper cover, wherein the base, the sidewall and the upper cover are formed by alternately stacking high atomic number layers and low atomic number layers.
According to an aspect of the invention, the low atomic number layer forming the base is provided with a via hole and a conductive layer;
the through hole is filled with a conductive object, and the conductive object and the conductive layer are both made of tungsten;
the thickness of the conductive layer is 0.01-20 μm.
According to one aspect of the invention, pads are arranged on two opposite surfaces of the base;
the base is also plated with a nickel layer and a gold layer.
According to an aspect of the present invention, the base, the side wall, and the upper cover are assembled by welding;
the solder between the base and the side wall is silver copper, and the solder between the upper cover and the side wall is gold tin.
According to an aspect of the invention, the material of the high atomic number layer is tungsten, and the material of the low atomic number layer is aluminum nitride.
According to one aspect of the invention, the base, the side wall and the upper cover are respectively provided with 8-40 pairs of high atomic number layers and low atomic number layers.
A method of making a shielding device comprising the steps of:
a. preparing a low atomic number layer and forming a high atomic number layer on the low atomic number layer;
b. manufacturing a base, a side wall and an upper cover by using the manufactured high atomic number layer and the manufactured low atomic number layer;
c. the base, the side wall and the upper cover are welded into a whole.
According to an aspect of the present invention, in the step (a), the aluminum nitride powder, the binder, the dispersant and the solvent are uniformly mixed, the low atomic number layer having a uniform thickness within 0.10 to 0.50mm is prepared by a tape casting apparatus, the low atomic number layer is compacted by using isostatic pressure at a pressure of 0.4kpsi to 2kpsi, and the tungsten paste is printed on the low atomic number layer to form the high atomic number layer;
when preparing the low atomic number layer for forming the base, before forming the high atomic number layer, a through hole is prepared on the low atomic number layer, tungsten paste is filled in the through hole to form a conductive object, and the tungsten paste is printed at a position except the through hole to form a conductive layer.
According to an aspect of the present invention, in the step (b), the manufactured high atomic number layer and low atomic number layer are laminated, hot-cut, and sintered at 1700 ℃ to 1900 ℃ to respectively manufacture the base, the side wall, and the upper cover;
and (3) carrying out nickel plating and gold plating on the manufactured base, wherein the thickness of the nickel layer is 0.02-2 mu m, and the thickness of the gold layer is 1.3-3.5 mu m.
According to an aspect of the present invention, in the step (c), the base, the side wall, and the upper cover are integrally welded by brazing.
According to the concept of the invention, the device is formed by combining a high-Z (atomic number) material, namely tungsten W, a low-Z (atomic number) material and aluminum nitride AlN, and can co-fire tungsten slurry and a green ceramic tape into a multilayer ceramic plate with a shielding function by utilizing an HTCC (high temperature ceramic chip) high-temperature multilayer co-fired ceramic preparation process during preparation. The ceramic substrate shell formed by the method has a strong radiation shielding effect and high heat conductivity, so that the finally prepared and formed device also has a good physical shielding effect and heat dissipation performance, and the requirement of normal use of electronic components in a harsh radiation environment can be met.
Drawings
FIG. 1 schematically illustrates a cross-sectional view of a shielding device according to an embodiment of the present invention;
fig. 2 schematically shows a bottom view of a shielding device according to an embodiment of the invention.
Detailed Description
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments will be briefly described below. It is obvious that the drawings in the following description are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
In describing embodiments of the present invention, the terms "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in an orientation or positional relationship that is based on the orientation or positional relationship shown in the associated drawings, which is for convenience and simplicity of description only, and does not indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and thus, the above-described terms should not be construed as limiting the present invention.
The present invention is described in detail below with reference to the drawings and the specific embodiments, which are not repeated herein, but the embodiments of the present invention are not limited to the following embodiments.
Referring to fig. 1, the shielding device (package) of the present invention, which is mainly applied to the field of package housing preparation technology for aerospace, includes a base 1, a sidewall 2 and an upper cover 3. The invention carries out Monte Carlo simulation calculation on the interaction of irradiation particles and a passive shielding material, and designs the base 1, the side wall 2 and the upper cover 3 into a structure with alternately laminated high atomic number layers 4 and low atomic number layers 5. Therefore, the irradiation shielding layer is integrated with the ceramic shell, the low-atomic-number shielding material and the high-atomic-number material are compounded to achieve the irradiation shielding effect, the irradiation shielding of the chip 7 (semiconductor) in all directions by 360 degrees can be achieved, and the assembling process is simple. Moreover, the multilayer substrate structure formed by the materials with high and low atomic numbers can also obtain higher heat conductivity (up to 160-170W/mK), thereby solving the problem of high-power chip packaging heat dissipation, simultaneously realizing high heat dissipation and effective shielding effect on space radiation, and simultaneously effectively reducing the whole volume of the device.
In the present invention, the high-atomic-number layer 4 is made of tungsten (W, atomic number Z-74), and the low-atomic-number layer 5 is made of aluminum nitride AlN (Al, atomic number Z-27; N, atomic number Z-7). Tungsten plays roles of radiation shielding and electric conduction, and can meet the space navigation application of devices; the thermal expansion coefficient of the aluminum nitride is highly consistent with that of the silicon-based chip (the thermal expansion coefficient of the aluminum nitride is 4.5 multiplied by 10)-6and/K), the packaging reliability of the large-area silicon-based chip can be ensured. Meanwhile, the high thermal conductivity (the thermal conductivity is more than or equal to 170W/m.k) of the aluminum nitride ceramic is utilized to meet the heat dissipation requirement of the high-power-density chip.
Thus, the unit substrates of the device are formed by alternately arranging two layers of materials with high and low atomic numbers, and the substrates with different structural forms respectively form the base 1, the side wall 2 and the upper cover 3. Specifically, as is clear from the device configuration shown in fig. 1, in the device of the present invention, the chip 7 is mounted on the base 1 when in use, and therefore the base 1 needs to have a function of flowing an electric current. For this purpose, the present invention provides a via hole and a conductive layer on the low atomic number layer 5 forming the base 1. Wherein the through holes are filled with a conductive material to form interlayer conduction, the conductive layer comprises metal lines which are used for wiring on the upper surface of each aluminum nitride ceramic layer by screen printing and metal patterns which are used for shielding radiation, and the thickness of the conductive layer is 0.01-20 μm. The conductive material and the conductive layer are both made of tungsten, so that good conductive performance and radiation resistance can be formed. In addition, in conjunction with fig. 2, the submount 1 of the present invention is further provided with high-precision (metallized) pads 6 on two opposite surfaces (i.e., top and bottom surfaces) for realizing the interconnection function of the chip 7. Of course, in order to avoid oxidation of tungsten metal in the long-term use process, the invention also plates a nickel layer and a gold layer on the part of the base 1 where tungsten and gold are exposed.
In the present invention, the side wall 2 and the upper cover 3 do not participate in current conduction, and therefore, the two layers only need to be of an alternate lamination structure of the high atomic number layer 4 and the low atomic number layer 5(W metal and AlN ceramic), and do not include a circuit layer. And, in order to maximize the radiation shielding effect of the side wall 2 and the upper cover 3, the present invention performs full metallization printing on both.
In the present invention, the base 1, the side wall 2 and the upper cover 3 are assembled by welding. Wherein, the solder between the base 1 and the side wall 2 is silver copper. Since the upper cover 3 is mounted after the base 1 and the sidewall 2 are soldered and the chip 7 is placed, the present invention selects gold-tin (Au-Sn) as the solder between the upper cover 3 and the sidewall 2. This is because the melting point of the gold-tin solder is low, so that melting of other portions when the upper lid 3 is soldered can be avoided.
In the present invention, the base 1, the side wall 2 and the upper cover 3 are respectively provided with 8 to 40 pairs of the high atomic number layer 4 and the low atomic number layer 5. Therefore, the strength and the radiation protection performance of each substrate can be guaranteed, and the phenomenon that the size of the device is increased due to the fact that the substrates are too thick can be avoided. Of course, the number of the laminated layers can be adjusted according to the irradiation dose requirement.
The method of the present invention for manufacturing the above-described shielding device first prepares the low atomic number layer 5, and then forms the high atomic number layer 4 on the low atomic number layer 5. Therefore, the base 1, the upper cover 3 and the side wall 2 can be manufactured by utilizing the high and low atomic number layer pairs respectively, and finally the base 1, the side wall 2 and the upper cover 3 are connected into a whole.
In the present invention, a casting method is used for preparing the low atomic number layer 5. Specifically, the aluminum nitride powder, the binder, the dispersant and the solvent are uniformly mixed, then the mixture is made to pass through a tape casting device to prepare a low atomic number layer 5 with uniform thickness and within 0.10-0.50mm, and then the low atomic number layer is compacted by using isostatic pressure, wherein the pressure is 0.4-2 kpsi. At this time, the prepared low atomic number layer 5 may also be referred to as a green tape. Subsequently, the tungsten paste is printed on the low atomic number layer 5 to form the high atomic number layer 4 (i.e., metallization printing), and then lamination, and hot cutting are performed, thereby obtaining a unit substrate composed of a pair of the high atomic number layer 4 and the low atomic number layer 5. Finally, the unit substrates were subjected to sintering leveling (HTCC) at 1700 ℃ to 1900 ℃, thereby obtaining the base 1, the upper cover 3, and the side walls 2, respectively.
Of course, the present invention differs in the manner of preparing the base 1 and the side walls 2 and the upper cover 3 in terms of whether or not they are conductive. Specifically, for the base 1, a through hole is prepared by punching the low atomic number layer 5 forming the base 1. The vias then need to be filled with prepared tungsten paste to make them conductive, so this step can also be referred to as via metallization. And, a conductive layer is printed (also using tungsten paste) at a portion other than the via hole to obtain a corresponding circuit pattern (i.e., circuit metallization), the printed portion being the upper surface. Of course, for the base 1, the high atomic number layer 4 should be printed in an off-circuit position. The side walls 2 and the top cover 3 are processed in substantially the same manner as the base 1, except that they do not have a circuit, and therefore, they can be fully metalized by screen printing, laminated, hot-cut, and co-fired in a sintering furnace.
In addition, as can be seen from the above, in order to avoid the tungsten metallization region on the submount 1 from being exposed, electroless nickel plating and electroless gold plating are performed on the submount 1 prepared as described above, so that a conductive layer is formed on the tungsten metallization region (which may include the pad). Wherein the thickness of the plated nickel layer is 0.02-2 μm, and the thickness of the gold layer is 1.3-3.5 μm.
Finally, the base 1, the side wall 2 and the upper cover 3 are welded into a whole by brazing, specifically, silver-copper solder is placed between the base 1 and the side wall 2, and positioned by a graphite mold, and the two are welded into a whole at the temperature of 780-plus-850 ℃ to form an assembly part. Then, the side wall 2 and the upper lid 3 are also soldered together by using gold-tin solder (before the chip 7 is put in).
The method of the invention is described in detail below in one example:
first, an aluminum nitride green tape having a thickness of 0.1 was prepared by a casting apparatus and densified under a pressure of 1.5 kpsi. For the base 1, a through hole was prepared on the aluminum nitride green tape by using a punching apparatus, and tungsten paste was filled in the through hole by using a screen printer. And after the tungsten paste is dried, printing the circuit on each layer of the aluminum nitride green ceramic tape by using the screen printer and the tungsten paste again, and simultaneously printing the tungsten paste on the aluminum nitride green ceramic tape to form a high atomic number layer. After the tungsten slurry is completely dried, each layer of aluminum nitride green ceramic tape is laminated in sequence, and 10 layers of green ceramic tapes are combined together under isostatic pressure. Then the raw ceramic band unit is processed by a hot cutting machine and sintered into a compact multilayer substrate structure at the temperature of 1850 ℃. The side wall 2 and the upper lid 3 are manufactured in a similar procedure except that they are not punched and circuit-printed. The base 1 is also subjected to electroless nickel plating and electroless gold plating, wherein the thickness of the nickel plating is about 1 μm, and the thickness of the gold layer is about 2 μm.
Finally, silver-copper solder is placed between the base 1 and the side wall 2 and positioned by a graphite mold, and then soldering is carried out at 820 ℃ to weld the two into a whole. And then the side wall 2 and the upper cover 3 are welded by using gold-tin solder, and the welding temperature is 350 ℃, thereby completing the manufacture of the device.
The above description is only one embodiment of the present invention, and is not intended to limit the present invention, and it is apparent to those skilled in the art that various modifications and variations can be made in the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. The shielding device comprises a base (1), a side wall (2) and an upper cover (3), and is characterized in that the base (1), the side wall (2) and the upper cover (3) are formed by alternately stacking a high atomic number layer (4) and a low atomic number layer (5).
2. The device according to claim 1, characterized in that the low atomic number layer (5) forming the base (1) is provided with through holes and an electrically conductive layer;
the through hole is filled with a conductive object, and the conductive object and the conductive layer are both made of tungsten;
the thickness of the conductive layer is 0.01-20 μm.
3. Device according to claim 1, characterized in that the base (1) is provided with pads (6) on two opposite faces;
the base (1) is also plated with a nickel layer and a gold layer.
4. Device according to claim 1, characterized in that said base (1), said side walls (2) and said upper cover (3) are assembled by welding;
the welding flux between the base (1) and the side wall (2) is silver copper, and the welding flux between the upper cover (3) and the side wall (2) is gold tin.
5. The device according to claim 1, wherein the high atomic number layer (4) is made of tungsten and the low atomic number layer (5) is made of aluminum nitride.
6. The device according to claim 1, characterized in that the base (1), the side wall (2) and the upper cover (3) are provided with 8-40 pairs of high atomic number layers (4) and low atomic number layers (5), respectively.
7. A method for preparing the shielding device of any one of claims 1-6, comprising the steps of:
a. preparing a low atomic number layer (5), and forming a high atomic number layer (4) on the low atomic number layer (5);
b. manufacturing a base (1), a side wall (2) and an upper cover (3) by using the manufactured high atomic number layer (4) and the manufactured low atomic number layer (5);
c. the base (1), the side wall (2) and the upper cover (3) are welded into a whole.
8. The method according to claim 7, wherein in the step (a), the aluminum nitride powder, the binder, the dispersant and the solvent are uniformly mixed, the low atomic number layer (5) having a uniform thickness within 0.10 to 0.50mm is prepared by a casting apparatus, the compaction is performed using isostatic pressure at a pressure of 0.4kpsi to 2kpsi, and the tungsten paste is printed on the low atomic number layer (5) to form the high atomic number layer (4);
in preparing the low atomic number layer (5) for forming the base (1), before the high atomic number layer (4) is formed, a through hole is prepared on the low atomic number layer (5), a tungsten paste is filled in the through hole to form a conductive material, and the tungsten paste is printed at a position other than the through hole to form a conductive layer.
9. The method according to claim 7, wherein in the step (b), the produced high atomic number layer (4) and low atomic number layer (5) are laminated, hot-cut, and sintered at 1700 ℃ to 1900 ℃ to produce the base (1), the side wall (2), and the upper cover (3), respectively;
and (3) carrying out nickel plating and gold plating on the manufactured base (1), wherein the thickness of the nickel layer is 0.02-2 mu m, and the thickness of the gold layer is 1.3-3.5 mu m.
10. A method according to claim 7, wherein in step (c), the base (1), the side wall (2) and the upper cover (3) are welded together by brazing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111351677.6A CN114203675A (en) | 2021-11-16 | 2021-11-16 | Shielding device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111351677.6A CN114203675A (en) | 2021-11-16 | 2021-11-16 | Shielding device and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114203675A true CN114203675A (en) | 2022-03-18 |
Family
ID=80647559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111351677.6A Pending CN114203675A (en) | 2021-11-16 | 2021-11-16 | Shielding device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114203675A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003227896A (en) * | 2002-02-01 | 2003-08-15 | Mitsubishi Heavy Ind Ltd | Radiation shield |
| US6650003B1 (en) * | 1999-11-17 | 2003-11-18 | Aeroflex Utmc Microelectronic Systems, Inc. | Radiation shielded carriers for sensitive electronics |
| CN101748319A (en) * | 2008-12-19 | 2010-06-23 | 北京有色金属研究总院 | Electron-irradiation resisting shielding material and method for preparing same |
| CN103681593A (en) * | 2013-12-02 | 2014-03-26 | 江苏省宜兴电子器件总厂 | Leadless ceramic chip carrier packaging structure and process for manufacturing same |
| CN109545771A (en) * | 2018-09-14 | 2019-03-29 | 中国电子科技集团公司第五十五研究所 | A kind of highly integrated module level encapsulation nitride multilayer aluminum substrate and its manufacturing method |
| CN212303661U (en) * | 2020-05-06 | 2021-01-05 | 中国电子科技集团公司第五十五研究所 | Miniaturized high-density high-efficiency three-dimensional system-in-package circuit |
-
2021
- 2021-11-16 CN CN202111351677.6A patent/CN114203675A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6650003B1 (en) * | 1999-11-17 | 2003-11-18 | Aeroflex Utmc Microelectronic Systems, Inc. | Radiation shielded carriers for sensitive electronics |
| JP2003227896A (en) * | 2002-02-01 | 2003-08-15 | Mitsubishi Heavy Ind Ltd | Radiation shield |
| CN101748319A (en) * | 2008-12-19 | 2010-06-23 | 北京有色金属研究总院 | Electron-irradiation resisting shielding material and method for preparing same |
| CN103681593A (en) * | 2013-12-02 | 2014-03-26 | 江苏省宜兴电子器件总厂 | Leadless ceramic chip carrier packaging structure and process for manufacturing same |
| CN109545771A (en) * | 2018-09-14 | 2019-03-29 | 中国电子科技集团公司第五十五研究所 | A kind of highly integrated module level encapsulation nitride multilayer aluminum substrate and its manufacturing method |
| CN212303661U (en) * | 2020-05-06 | 2021-01-05 | 中国电子科技集团公司第五十五研究所 | Miniaturized high-density high-efficiency three-dimensional system-in-package circuit |
Non-Patent Citations (1)
| Title |
|---|
| 拉奥 R.图马拉: "《器件和系统封装技术与应用》", 30 June 2021, 机械工业出版社, pages: 195 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9219041B2 (en) | Electronic package for millimeter wave semiconductor dies | |
| US5111277A (en) | Surface mount device with high thermal conductivity | |
| CN105304577B (en) | The preparation method of multi-chip module cooling encapsulation ceramic composite substrate | |
| US5188985A (en) | Surface mount device with high thermal conductivity | |
| CN110112105B (en) | Ceramic shell for packaging double MOS (metal oxide semiconductor) tubes and in-situ replacing SOP8 plastic packaging device and preparation method thereof | |
| WO2011040329A1 (en) | Package for containing element and mounted structure | |
| CN104051352A (en) | Millimeter wave chip carrier based on high temperature co-fired ceramic and manufacturing method thereof | |
| CN114050130A (en) | CSOP type ceramic shell, amplifying filter and manufacturing method | |
| CN108962846B (en) | Packaging structure of thick film hybrid integrated circuit and manufacturing method thereof | |
| CN110961741A (en) | LTCC substrate brazing method | |
| CN108831837A (en) | The preparation method of high-termal conductivity phase change temperature control composite package substrate | |
| CN115662988A (en) | Packaging shell of high-power integrated microcircuit module and packaging method thereof | |
| CN113707634A (en) | Sheet type packaging shell | |
| JP5960522B2 (en) | Ceramic circuit board and electronic device using the same | |
| CN114203675A (en) | Shielding device and preparation method thereof | |
| CN110444532A (en) | A kind of V-band Small aperture coupling type of HTCC technique is without lead Surface Mount shell | |
| CN110265363B (en) | Ceramic shell for packaging four diodes and in-situ replacing SOP8 plastic packaging device and preparation method thereof | |
| JP5665479B2 (en) | Circuit board and electronic device | |
| JP2004055985A (en) | Ceramic package and electronic apparatus | |
| JP3447043B2 (en) | Package for electronic components | |
| JP2000114441A (en) | Multilayer metal plate and its manufacture | |
| KR20190010462A (en) | Wiring board and planar transformer | |
| CN117832176B (en) | Packaging structure and packaging method of GaN chip | |
| KR100413848B1 (en) | Hermetic Package for Fiber Optic Module | |
| CN218849494U (en) | Packaging shell of high-power-density hybrid integrated microcircuit module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |