CN114203546A - Semiconductor device and method for manufacturing the same - Google Patents

Semiconductor device and method for manufacturing the same Download PDF

Info

Publication number
CN114203546A
CN114203546A CN202010985114.1A CN202010985114A CN114203546A CN 114203546 A CN114203546 A CN 114203546A CN 202010985114 A CN202010985114 A CN 202010985114A CN 114203546 A CN114203546 A CN 114203546A
Authority
CN
China
Prior art keywords
layer
semiconductor device
photoresist
manufacturing
stop layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010985114.1A
Other languages
Chinese (zh)
Inventor
王明军
刘磊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ningbo Semiconductor International Corp
Original Assignee
Ningbo Semiconductor International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ningbo Semiconductor International Corp filed Critical Ningbo Semiconductor International Corp
Priority to CN202010985114.1A priority Critical patent/CN114203546A/en
Publication of CN114203546A publication Critical patent/CN114203546A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The embodiment of the invention provides a semiconductor device and a manufacturing method thereof, wherein the manufacturing method of the semiconductor device comprises the steps of providing a semiconductor structure to be processed, wherein the semiconductor structure to be processed comprises a stop layer, an etched layer covering the stop layer and a photoresist layer positioned on the etched layer, and the etched layer exposes out of the surface of part of the stop layer; and removing at least part of the photoresist layer by using a dry photoresist removing process, wherein photoresist removing gas used by the dry photoresist removing process comprises oxygen and stop layer protective film forming gas. The manufacturing method of the semiconductor device provided by the embodiment of the invention can reduce the damage of the photoresist stripping process to the stop layer positioned below the etched layer, and improve the quality of the obtained semiconductor device.

Description

Semiconductor device and method for manufacturing the same
Technical Field
The embodiment of the invention relates to the field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof.
Background
With the development of semiconductor related technologies, people have higher and higher requirements on the quality of semiconductor structures, and thus, the requirements on processing technologies are also continuously increased.
In the process of processing a semiconductor structure, a photolithography process is a commonly used process, and in order to ensure etching of an etched layer, a photoresist layer needs to be formed on the surface of the etched layer, and after the etching of the etched layer is completed, the photoresist layer is removed by using a photoresist removing process.
However, the photoresist stripping process at the present stage may damage the stop layer located below the etched layer, which affects the quality of the semiconductor structure.
Disclosure of Invention
The invention provides a semiconductor device and a manufacturing method thereof, aiming at reducing the damage of a photoresist stripping process to a stop layer positioned below an etched layer and improving the quality of the obtained semiconductor device.
In order to solve the above problems, the present invention provides a method of manufacturing a semiconductor device, comprising:
providing a semiconductor structure to be processed, wherein the semiconductor structure to be processed comprises a stop layer, an etched layer covering the stop layer and a photoresist layer positioned on the etched layer, and the etched layer exposes part of the surface of the stop layer;
and removing at least part of the photoresist layer by using a dry photoresist removing process, wherein photoresist removing gas used by the dry photoresist removing process comprises oxygen and stop layer protective film forming gas.
Alternatively, the stop layer protective film forming gas includes a hydrogen-nitrogen mixed gas.
Optionally, the gas content ratio range of hydrogen and nitrogen in the hydrogen-nitrogen mixed gas is 1: 23-1: 25.
optionally, the stop layer protective film forming gas includes water vapor.
Optionally, the ratio of the gas content of the oxygen gas and the water vapor ranges from 9: 1-11: 1.
optionally, the stripping gas further comprises nitrogen.
Optionally, the dry photoresist removing device of the dry photoresist removing process includes a photoresist removing chamber, and an oxygen pipeline and a stop layer protective film forming gas pipeline which are communicated with the photoresist removing chamber.
Optionally, the temperature of the stripping gas ranges from 200 ℃ to 250 ℃.
Optionally, the photoresist stripping time of the dry photoresist stripping process ranges from 9 minutes to 11 minutes.
Optionally, the material of the stop layer is aluminum nitride.
Optionally, the step of removing at least a portion of the thickness of the photoresist layer by using a dry stripping process further includes:
and performing surface smoothing treatment on the stop layer of the semiconductor structure to be processed.
Optionally, the step of performing surface smoothing treatment on the stop layer of the semiconductor structure to be processed includes:
and performing surface smoothing treatment on the stop layer of the semiconductor structure to be processed by using argon.
Optionally, the method further comprises:
and removing the residual photoresist layer or the photoresist layer residue by using a wet photoresist removing process.
Optionally, the material of the wet deglued liquid used in the wet etching process comprises one or more of N-methyl-2-pyrrolidone, dimethyl sulfoxide, 2-aminoethanol, tetramethylammonium hydroxide, ethanolamine salt, tertiary amine, hydrogen fluoride and ammonium hydroxide.
In order to solve the above problem, embodiments of the present invention provide a semiconductor device obtained by processing using the manufacturing method of the semiconductor device according to any one of the above aspects.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following advantages:
the semiconductor device and the manufacturing method thereof provided by the embodiment of the invention comprise the steps of firstly providing a semiconductor structure to be processed, wherein the semiconductor structure comprises a stop layer, an etched layer covering the stop layer and a photoresist layer covering the etched layer; and removing at least part of the photoresist layer by using a dry photoresist removing process, wherein the etched layer exposes part of the surface of the stop layer, and photoresist removing gas used by the dry photoresist removing process comprises oxygen and stop layer protective film forming gas. According to the manufacturing method of the semiconductor device provided by the embodiment of the invention, when the photoresist layer of the semiconductor structure is removed, the photoresist removing gas comprises oxygen and the stop layer protective film forming gas, and the existence of the stop layer protective film forming gas can form a protective film on the surface of the stop layer, so that the stop layer can be prevented from being corroded by the wet photoresist removing liquid in the subsequent wet photoresist removing process, and meanwhile, the oxygen reacts with the photoresist layer in the dry photoresist removing process, so that the photoresist layer with at least partial thickness can be removed, the processing of the semiconductor structure is realized, and the preparation is also made for the subsequent wet photoresist removing process. It can be seen that, in the method for manufacturing a semiconductor device according to the embodiment of the present invention, the gas used for removing the photoresist layer includes the stop layer protective film forming gas, so that a protective film can be formed on the surface of the stop layer, the stop layer is prevented from being corroded in the subsequent wet photoresist removal process, the damage of the stop layer is avoided, and the quality of the semiconductor device can be improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic diagram of a semiconductor device resulting from a method of manufacturing a semiconductor device according to the prior art;
fig. 2 to fig. 4 are schematic structural diagrams corresponding to steps of a method for manufacturing a semiconductor device according to an embodiment of the present invention.
Detailed Description
As known from the background art, the photoresist stripping process at the present stage may damage the stop layer located below the etched layer, which affects the quality of the semiconductor structure.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a semiconductor device obtained by a method for manufacturing a semiconductor device according to the prior art.
When the photoresist layer is removed, at least a part of the photoresist is removed through a dry photoresist removal process, however, in a subsequent wet photoresist removal process, the stop layer is corroded by the wet photoresist removal process, as shown in fig. 1, and the stop layer 10 of the obtained semiconductor structure, which is not covered by the etched layer 11, is corroded, so that the quality of the obtained semiconductor structure is affected.
Such as: when the semiconductor structure is a resonator structure, the stop layer 10 is made of ALN and serves as a piezoelectric layer, the etched layer 11 is made of an electrode material, etching of the electrode material is achieved by patterning photoresist, and after patterning, damage is caused to the surface of the ALN in the photoresist removing process, so that the performance of the formed resonator structure is affected.
For this reason, improvements are made in semiconductor device manufacturing methods, such as:
1. the wet degumming solution is adjusted, and the wet degumming solution which can realize the removal of the photoresist and improve the corrosion condition of the stop layer is not found;
2. the protective layer is additionally deposited on the surface of the stop layer in advance, the protective layer is used as the stop layer when the etched layer is etched, the protective layer can be stopped on the protective layer, and after the photoresist layer is removed, chemical etching of the protective layer is carried out, so that steps in the semiconductor processing process can be increased, the manufacturing cost is increased, and the performance of a device can be influenced due to the arrangement of the protective layer.
It can be seen that the semiconductor structure obtained by the semiconductor manufacturing method using the above method still cannot satisfy the performance requirements.
In order to reduce damage to a stop layer located below an etched layer caused by a photoresist stripping process and improve quality of an obtained semiconductor device, an embodiment of the invention provides a manufacturing method of a semiconductor device, which includes:
providing a semiconductor structure to be processed, wherein the semiconductor structure to be processed comprises a stop layer, an etched layer covering the stop layer and a photoresist layer positioned on the etched layer, and the etched layer exposes part of the surface of the stop layer;
and removing at least part of the photoresist layer by using a dry photoresist removing process, wherein photoresist removing gas used by the dry photoresist removing process comprises oxygen and stop layer protective film forming gas.
According to the manufacturing method of the semiconductor device provided by the embodiment of the invention, when the photoresist layer of the semiconductor structure is removed, the photoresist removing gas comprises oxygen and the stop layer protective film forming gas, and the existence of the stop layer protective film forming gas can form a protective film on the surface of the stop layer, so that the stop layer can be prevented from being corroded by the wet photoresist removing liquid in the subsequent wet photoresist removing process, and meanwhile, the oxygen reacts with the photoresist layer in the dry photoresist removing process, so that the photoresist layer with at least partial thickness can be removed, the processing of the semiconductor structure is realized, and the preparation is also made for the subsequent wet photoresist removing process.
It can be seen that, in the method for manufacturing a semiconductor device according to the embodiment of the present invention, the gas used for removing the photoresist layer includes the stop layer protective film forming gas, so that a protective film can be formed on the surface of the stop layer, the stop layer is prevented from being corroded in the subsequent wet photoresist removal process, the damage of the stop layer is avoided, and the quality of the semiconductor device can be improved.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the directions or positional relationships indicated in the embodiments of the present invention are based on the directions or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, and the indicated devices must have specific directions and be configured in specific directions, and thus, should not be construed as limiting the present invention.
Fig. 2 to fig. 4 are schematic structural diagrams corresponding to steps of a method for manufacturing a semiconductor device according to an embodiment of the present invention.
Referring to fig. 2, a semiconductor structure to be processed is provided, the semiconductor structure to be processed includes a stop layer 100, an etched layer 110 covering the stop layer 100, and a photoresist layer 120 located on the etched layer 110, wherein a portion of the surface of the stop layer 100 is exposed by the etched layer 110.
The semiconductor structure to be processed may provide a basis for subsequent processing of semiconductor devices.
And the semiconductor structure to be processed can be obtained after the photoetching of the layer to be etched is completed. In one embodiment, the semiconductor structure to be processed may be obtained by:
forming a stop layer 100;
forming a layer to be etched (i.e., a structure before the etched layer 110 is etched in the figure) on the stop layer 100, wherein the layer to be etched covers the stop layer 100;
forming a photoresist layer 120 on the layer to be etched, the photoresist layer 120 having an etching pattern of the layer to be etched;
and etching the layer to be etched according to the pattern of the photoresist layer 120 to obtain the etched layer 110, wherein part of the surface of the stop layer 100 is exposed by the etched layer 110.
In the process of processing a semiconductor device, multiple times of photoetching may be required, and the materials of the stop layer 100 and the layer to be etched in each time of photoetching are not completely the same, so that as long as the etching rate of the material of the layer to be etched is far greater than that of the material of the layer below the layer to be etched in one time of photoetching, the layer below the layer to be etched is the stop layer.
Of course, there may be other structures below the stop layer, such as the substrate 130 or semiconductor structures that have already been processed. In the present embodiment, as shown in the figure, the stop layer includes a piezoelectric layer, and the etched layer includes a first electrode layer; the semiconductor structure to be processed further comprises a substrate 130, a second electrode layer 150 located on the substrate 130, and a piezoelectric layer located above the second electrode layer 150, so as to meet the performance requirement of the resonant structure device.
In this embodiment, the material of the stop layer 100 (piezoelectric layer) is aluminum nitride (ALN), the material of the etched layer (i.e. the layer to be etched, the first electrode layer) is metal, such as tungsten, aluminum, etc., and a metal electrode is formed to meet the functional requirements of the device (e.g. rf low-pass filter, resonance); in other embodiments, the material of the stop layer 100 may also be silicon, silicon dioxide, etc. and the material of the etched layer may also be other materials as long as the need to stop during etching can be achieved. Referring to fig. 3, the photoresist layer 120 is removed at least partially by a dry stripping process using a stripping gas including oxygen and a stop layer protection film forming gas.
The photoresist removing gas used in the dry photoresist removing process comprises oxygen and stop layer protective film forming gas, the oxygen can react with the photoresist to remove the photoresist layer with at least partial thickness, and meanwhile, the existence of the stop layer protective film forming gas can enable the protective film 140 to be formed on the surface of the stop layer 100, so that the stop layer 100 is protected in the subsequent process, and the probability of corrosion is reduced.
In this embodiment, the material of the stop layer 100 is aluminum nitride, the stop layer protection film forming gas includes hydrogen-nitrogen mixed gas, and the reason that the presence of the hydrogen-nitrogen mixed gas makes the surface of the stop layer 100 form the protection film 140 may be that the presence of the hydrogen-nitrogen mixed gas makes oxygen and aluminum nitride react with each other at an accelerated speed to generate a layer of aluminum oxide, thereby blocking direct contact between the wet degumming solution for subsequent wet degumming and the aluminum nitride, or may be that the aluminum nitride reacts with the oxygen and the hydrogen-nitrogen mixed gas to generate a layer of aluminum hydroxide, thereby blocking direct contact between the wet degumming solution for subsequent wet degumming and the aluminum nitride.
In order to ensure the forming effect of the stop layer protective film, the gas content ratio range of hydrogen and nitrogen in the hydrogen-nitrogen mixed gas may be 1: 23-1: 25, such as: 1: 24.
in another embodiment, the material of the stop layer 100 is aluminum nitride, the stop layer protection film forming gas includes water vapor, and the presence of the water vapor may cause the surface of the stop layer 100 to form the protection film 140 because the presence of the water vapor causes oxygen to react with the aluminum nitride to generate a layer of aluminum oxide, thereby preventing the wet stripping solution for subsequent wet stripping from directly contacting the aluminum nitride, or may cause the aluminum nitride to react with water to generate a layer of aluminum hydroxide, thereby preventing the wet stripping solution for subsequent wet stripping from directly contacting the aluminum nitride. In other embodiments, the presence of water vapor may promote reaction with or directly react with the stop layer 100 of other materials to form a protective film of other materials.
The step of removing the photoresist layer 120 with at least a portion of the thickness by using a dry photoresist removal process means that, in this embodiment, only the portion with higher hardness on the surface of the photoresist layer 120 may be removed, and the remaining photoresist layer 120 with lower hardness may be removed by using a subsequent wet photoresist removal process, and in other embodiments, all the photoresist layers 120 may be removed, but a portion of the contact surface between the photoresist layer 120 and the etched layer 110 still remains, and may be further removed by using a subsequent wet photoresist removal process, so that the removal thoroughness of the photoresist layer 120 is improved, and the quality of the semiconductor structure is improved.
Specifically, the equipment used in the dry photoresist stripping process is dry photoresist stripping equipment which comprises a photoresist stripping cavity, an oxygen pipeline communicated with the photoresist stripping cavity and a gas pipeline formed by a stop layer protective film. The arrangement of the gas pipeline formed by the stop layer protective film of the dry photoresist stripping equipment can ensure the realization of the manufacturing method of the semiconductor device provided by the embodiment of the invention, and meanwhile, the change of the equipment is small, so that the manufacturing cost of the semiconductor device provided by the embodiment of the invention is reduced.
Of course, it is easily understood that the other end of the oxygen line communicates with the oxygen source, and the other end of the stop-layer-protecting-film forming gas line communicates with the stop-layer-protecting-film forming gas source.
Certainly, in order to ensure the dry photoresist stripping effect, the temperature in the dry photoresist stripping process needs to be controlled, too high temperature may affect the performance of the semiconductor structure, and too low temperature may affect the removal efficiency of the photoresist layer 120, for this reason, in this embodiment, the temperature range of the photoresist stripping gas is 200 ℃ to 250 ℃, for example: 210 ℃, 220 ℃, 225 ℃ and 234 ℃, thereby ensuring the removal efficiency of the photoresist layer 120 and the processing efficiency of the semiconductor structure on the basis of not influencing the performance of the semiconductor structure.
In addition, the photoresist removing time of the dry photoresist removing process also affects the removing effect of the photoresist layer 120, and the time is too long, so that the amount of the removed photoresist can be increased, but the processing efficiency of the semiconductor structure is reduced; the too short time may cause that the removal amount of the photoresist layer 120 may not meet the requirement, for example, the hard portion on the surface of the photoresist layer 120 is not completely removed, which affects the subsequent processing process, therefore, in this embodiment, the photoresist removing time range of the dry photoresist removing process is 9 minutes to 11 minutes, for example, 10 minutes, so as to meet the requirement of removing the photoresist layer 120, shorten the photoresist removing time, improve the processing efficiency, and reduce the processing cost.
Further, the ratio of the oxygen content in the stripping gas to the gas content of the stop layer protective film forming gas also affects the removal rate of the photoresist layer 120, the formation effect of the protective film 140 on the surface of the stop layer 100 is affected by too high oxygen content, and the removal efficiency of the photoresist layer 120 is affected by too low oxygen content. In this embodiment, when the stop layer protective film forming gas is water vapor, the ratio of the oxygen content to the water vapor content of the photoresist stripping gas is in the range of 9: 1-11: 1, such as: 10: 1, thereby, the protective film 140 can be formed on the surface of the stop layer 100 on the one hand, and the removal efficiency of the photoresist layer 120 can be ensured on the other hand.
In another embodiment, when the stop layer protective film forming gas is water vapor, the stripping gas may further include nitrogen to adjust the content of oxygen and water vapor in the stripping gas to ensure that the removal rate of the photoresist layer 120 matches the generation rate of the protective film 140. It can be seen that, in the method for manufacturing a semiconductor device according to the embodiment of the present invention, water vapor is added to the gas used for removing the photoresist layer, so that the protective film 140 can be formed on the surface of the stop layer, the stop layer is prevented from being corroded in the subsequent wet photoresist removal process, damage to the stop layer is avoided, and the quality of the semiconductor device can be improved.
As shown in fig. 1, due to the lattice structure of the stop layer 100, the surface of the stop layer is uneven and has sharp corners, so that, in the subsequent wet stripping process, the wet stripping liquid can corrode the stop layer 100 along the sharp corners, which aggravates the corrosion of the stop layer 100 and increases the unevenness of the surface of the stop layer, so that the surface roughness of the stop layer becomes large. In order to reduce the damage of the wet stripping solution to the stop layer 100 in the subsequent wet stripping process, before or after the step of removing at least part of the thickness of the photoresist layer 120 by using the dry stripping process, the method may further include:
and performing surface smoothing treatment on the stop layer 100 of the semiconductor structure to be processed.
In this embodiment, before the step of removing at least a portion of the photoresist layer 120 by the dry photoresist stripping process, the surface of the stop layer 100 of the semiconductor structure to be processed is smoothed. Through the surface smoothing treatment to stop layer 100, can reduce the closed angle on stop layer 100 surface, and then reduce the corrosive action, can also remove at least partial thickness at dry process photoresist removing simultaneously when photoresist layer 120, form more smooth protection film, guarantee the formation effect of protection film, and then guarantee the guard action to stop layer 100 in the follow-up wet process photoresist removing process.
In this embodiment, the stop layer 100 of the semiconductor structure to be processed may be surface-smoothed with argon gas. The argon has strong bombardment capability, and the effect of surface smoothing treatment can be ensured. In other embodiments, the surface smoothing of the stop layer may also be achieved by other gases.
When the surface of the stop layer 100 of the semiconductor structure to be processed is smoothed by argon, the temperature of argon can be set to room temperature, the duration time can be in the range of 50s-70s, such as 60s, and the flow rate of argon can be in the range of 90sccm-110 sccm.
In another embodiment, referring to fig. 4, a wet stripping process is used to remove the remaining photoresist layer or the photoresist layer residue.
And after the dry photoresist removing is finished, further removing the residual photoresist layer or the residual photoresist layer by utilizing a wet photoresist removing process.
And placing the semiconductor structure subjected to dry photoresist removal in a wet photoresist removing solution, and removing the residual photoresist layer 120 or the photoresist layer residue by using the wet photoresist removing solution.
Of course, other unwanted structures, such as polymer formed on the sidewalls of the etched recess during the etching process, may also be removed to improve the performance of the semiconductor structure.
Specifically, the wet degumming liquid used in the wet etching process comprises one or more of N-methyl-2-pyrrolidone, dimethyl sulfoxide, 2-aminoethanol, tetramethylammonium hydroxide, ethanolamine salt, tertiary amine, hydrogen fluoride and ammonium hydroxide.
Thus, in the method for manufacturing a semiconductor device according to the embodiment of the present invention, when the photoresist layer is removed by using the dry photoresist removal process, the stop layer protective film forming gas is added to the used gas, so that the protective film 140 can be formed on the surface of the stop layer, and when the residual photoresist layer or the residual photoresist layer is further removed by using the wet photoresist removal process, the protective film 140 can prevent the stop layer from being corroded, thereby avoiding damage to the stop layer, and improving the quality of the semiconductor device.
In order to solve the above problems, embodiments of the present invention further provide a semiconductor device, which is processed by the aforementioned manufacturing method of the semiconductor device, has high quality, and meets the quality requirement.
Although the embodiments of the present invention have been disclosed, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.

Claims (15)

1. A method of manufacturing a semiconductor device, comprising:
providing a semiconductor structure to be processed, wherein the semiconductor structure to be processed comprises a stop layer, an etched layer covering the stop layer and a photoresist layer positioned on the etched layer, and the etched layer exposes part of the surface of the stop layer;
and removing at least part of the photoresist layer by using a dry photoresist removing process, wherein photoresist removing gas used by the dry photoresist removing process comprises oxygen and stop layer protective film forming gas.
2. The method for manufacturing a semiconductor device according to claim 1, wherein the stop layer protective film forming gas comprises a hydrogen-nitrogen mixed gas.
3. The manufacturing method of a semiconductor device according to claim 2, wherein a gas content ratio of hydrogen and nitrogen in the hydrogen-nitrogen mixed gas is in a range of 1: 23-1: 25.
4. the method for manufacturing a semiconductor device according to claim 1, wherein the stop layer protective film forming gas includes water vapor.
5. The method for manufacturing a semiconductor device according to claim 4, wherein a gas content ratio of the oxygen gas to the water vapor is in a range of 9: 1-11: 1.
6. the method for manufacturing a semiconductor device according to claim 4, wherein the stripping gas further comprises nitrogen gas.
7. The method for manufacturing a semiconductor device according to claim 1, wherein the temperature of the stripping gas is in a range of 200 ℃ to 250 ℃.
8. The method for manufacturing a semiconductor device according to claim 1, wherein a stripping time of the dry stripping process is in a range of 9 minutes to 11 minutes.
9. The method for manufacturing a semiconductor device according to claim 1, wherein the stop layer comprises a piezoelectric layer, and the etched layer comprises a first electrode layer;
the semiconductor structure to be processed further comprises a substrate and a second electrode layer located on the substrate, and the piezoelectric layer is located above the second electrode layer.
10. The method for manufacturing a semiconductor device according to any one of claims 1 to 9, wherein a material of the stop layer is aluminum nitride.
11. The method of manufacturing a semiconductor device according to claim 1, wherein the step of removing at least a portion of the thickness of the photoresist layer using a dry stripping process further comprises, before or after: and performing surface smoothing treatment on the stop layer of the semiconductor structure to be processed.
12. The method for manufacturing a semiconductor device according to claim 11, wherein the step of performing surface smoothing treatment on the stop layer of the semiconductor structure to be processed comprises:
and performing surface smoothing treatment on the stop layer of the semiconductor structure to be processed by using argon.
13. A method for manufacturing a semiconductor device according to any one of claims 1 to 12, further comprising:
and removing the residual photoresist layer or the photoresist layer residue by using a wet photoresist removing process.
14. The method for manufacturing a semiconductor device according to claim 13, wherein a material of the wet desmutting liquid used in the wet etching process includes one or a mixture of N-methyl-2-pyrrolidone, dimethyl sulfoxide, 2-aminoethanol, tetramethylammonium hydroxide, ethanolamine salt, tertiary amine, hydrogen fluoride, and ammonium hydroxide.
15. A semiconductor device obtained by processing using the method for manufacturing a semiconductor device according to any one of claims 1 to 14.
CN202010985114.1A 2020-09-18 2020-09-18 Semiconductor device and method for manufacturing the same Pending CN114203546A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010985114.1A CN114203546A (en) 2020-09-18 2020-09-18 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010985114.1A CN114203546A (en) 2020-09-18 2020-09-18 Semiconductor device and method for manufacturing the same

Publications (1)

Publication Number Publication Date
CN114203546A true CN114203546A (en) 2022-03-18

Family

ID=80645361

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010985114.1A Pending CN114203546A (en) 2020-09-18 2020-09-18 Semiconductor device and method for manufacturing the same

Country Status (1)

Country Link
CN (1) CN114203546A (en)

Similar Documents

Publication Publication Date Title
KR100995725B1 (en) Semiconductor device manufacturing method
KR100229241B1 (en) Dry etching method
KR20120098487A (en) Semiconductor device manufacturing method
KR20120091453A (en) Method for manufacturing a semiconductor device
KR100255404B1 (en) Dry etching method
US20050003310A1 (en) Etching process including plasma pretreatment for generating fluorine-free carbon-containing polymer on a photoresist pattern
JP3318801B2 (en) Dry etching method
JP2010263132A (en) Dry etching method
CN114203546A (en) Semiconductor device and method for manufacturing the same
US6296988B1 (en) Method for forming a mental wiring pattern on a semiconductor device
US7055532B2 (en) Method to remove fluorine residue from bond pads
JPH07161689A (en) Dry etching method
US20060108324A1 (en) Process for removing a residue from a metal structure on a semiconductor substrate
JPH0831797A (en) Method of selective etching
KR100190498B1 (en) Etching method for polysilicon film
TWI744003B (en) Method of patterning platinum
KR20060122578A (en) Method for forming hard mask in semiconductor memory device
KR100528266B1 (en) Solution for removing residual wall residue after dry etching
JP2005136097A (en) Method of manufacturing semiconductor device
JP3570903B2 (en) Method for manufacturing semiconductor device
US7005385B2 (en) Method for removing a resist mask with high selectivity to a carbon hard mask used for semiconductor structuring
KR100461743B1 (en) Method For Plasma Etching Of Ir-Ta-O Electrode And For Post-Etch Cleaning
JPH07263406A (en) Method of manufacturing semiconductor device
KR100312985B1 (en) method for fabricating semiconductor device
US7268082B2 (en) Highly selective nitride etching employing surface mediated uniform reactive layer films

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination