CN114203442B - Capacitor unit for high-precision capacitor array - Google Patents
Capacitor unit for high-precision capacitor array Download PDFInfo
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- CN114203442B CN114203442B CN202111465064.5A CN202111465064A CN114203442B CN 114203442 B CN114203442 B CN 114203442B CN 202111465064 A CN202111465064 A CN 202111465064A CN 114203442 B CN114203442 B CN 114203442B
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- 239000003990 capacitor Substances 0.000 title claims abstract description 129
- 239000002184 metal Substances 0.000 claims abstract description 286
- 229910052751 metal Inorganic materials 0.000 claims abstract description 286
- 230000002093 peripheral effect Effects 0.000 claims abstract description 51
- 150000002739 metals Chemical class 0.000 claims abstract description 19
- 238000003491 array Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
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- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The application discloses a capacitor unit for a high-precision capacitor array, which comprises: the x-th layer metal, the effective capacitance unit is formed by: the middle cross metal and the peripheral square metal are provided with comb-shaped metals in different directions in 4 quadrants formed by taking the cross metal as an x-axis and a y-axis, the comb-shaped metals connect the cross metal and the square metal, the x-layer metal is used as a part of a lower polar plate of the capacitor, and the peripheral square is provided with an upward through hole; the redundant capacitance part is the same as the effective capacitance part in the x layers. The effective capacitor unit is basically composed of the (x+1) -th layer metal and the (x+ 2*n) -th layer metal: the square metal of periphery is regarded as the bottom plate, the cross metal in the middle is regarded as the top plate, 4 comb structures of quadrant or staggered formation electric capacity or all connect to square bottom plate of periphery as shielding with the shape of the interdigital. The application can realize multidirectional effective capacitance, has good shielding to the upper polar plate, and has higher capacitance matching degree.
Description
Technical Field
The application relates to a capacitor unit of a high-precision capacitor array.
Background
High precision capacitive arrays are commonly used in analog-to-digital converters (ADCs), particularly successive approximation analog-to-digital converters and pipelined analog-to-digital converters. In an ADC without a capacitance calibration function, the matching degree of the capacitance array often becomes an important factor for limiting the effective number of bits of the ADC, and integral nonlinearity and differential nonlinearity. Particularly in a 12bit resolution ADC, which is at the threshold of capacitance calibration gain, a high precision capacitive array implementation can avoid the complexity of capacitance calibration under this specification. In common designs, the physical implementation of the capacitive array is biased more towards the distribution of the capacitive cells, which is sought to achieve performance improvement by improving the capacitive cells themselves. The capacitor implementation of the conventional structure is shown as a two-layer metal capacitor in fig. 2, and the capacitance value is obtained by using the sidewall capacitor, wherein the two patterns are identical and are coincident in a top view. Because the metal direction of the effective side wall capacitor is single, and the lower polar plate of the capacitor is easy to generate parasitism with the substrate, the matching degree of the capacitor is reduced.
Disclosure of Invention
The application aims to provide a capacitor unit for a high-precision capacitor array, which realizes multidirectional effective capacitance and has higher capacitance matching degree.
The technical scheme for achieving the purpose is as follows:
a capacitive unit for a high precision capacitive array, comprising:
the x-th layer metal, the effective capacitance part comprises: the middle cross metal and the periphery square metal are provided with comb-shaped metals in different directions in 4 quadrants formed by taking the cross metal as an x-axis and a y-axis; the comb-shaped metal is connected with cross-shaped metal and peripheral square metal, and the x-th metal is used as a part of the lower polar plate of the capacitor; the peripheral square metal is provided with an upward through hole, and the redundant capacitor part is the same as the effective capacitor part; wherein x is more than or equal to 2 and is a positive integer;
the x+1 layer metal, the effective capacitance part includes: the middle cross metal and the peripheral square metal are connected to the upper polar plate of the capacitor, the peripheral square metal is connected to the lower polar plate of the capacitor, and 4 quadrants formed by taking the cross metal as the y axis of the x axis are provided with comb-shaped metals in different directions; half of the comb-shaped metal is connected with the upper polar plate of the capacitor, and the other half is connected with the lower polar plate of the capacitor; the cross metal and the peripheral square metal are provided with upward through holes, and the redundant capacitor part is as follows: removing cross metal on the basis of the effective capacitance part, wherein comb-shaped metal is connected with a lower polar plate of the capacitor;
the x+2 layer metal, the effective capacitance part includes: the middle cross metal and the peripheral square metal are connected to the upper polar plate of the capacitor, the peripheral square metal is connected to the lower polar plate of the capacitor, and 4 quadrants formed by taking the cross metal as the y axis of the x axis are provided with comb-shaped metals in different directions; the comb-shaped metal covers the comb-shaped metal of the upper electrode plate of the capacitor of the (x+1) th metal layer, and upward through holes are formed in the cross-shaped metal and the peripheral square metal; the redundant capacitor part is as follows: removing cross metal on the basis of the effective capacitance part;
the metal layer number comprises an x layer to an x+2n+1 layer, wherein n is more than or equal to 1 and is a positive integer;
the x+2n+1 layer metal, the effective capacitance part includes: square bracket shaped metal with square periphery; the redundant capacitor portion is free of metal at this level.
Preferably, when n is more than or equal to 2, the metal shapes and the through hole shapes of the effective capacitor part and the redundant capacitor part of the (x+2i-1) -th layer are the same as those of the corresponding (x+1) -th layer; wherein i=1, 2 … n-1; the metal shape and the through hole shape of the effective capacitor part and the redundant capacitor part of the x+2i layer are the same as those of the corresponding x layer; wherein i=1, 2 … n-1;
further comprises:
an x+2n-1 layer metal, the effective capacitance portion comprising: the middle cross metal and the peripheral square metal are connected to the upper polar plate of the capacitor, the peripheral square metal is connected to the lower polar plate of the capacitor, and 4 quadrants formed by taking the cross metal as the y axis of the x axis are provided with comb-shaped metals in different directions; half of the comb-shaped metal is connected with the upper polar plate of the capacitor, and the other half is connected with the lower polar plate of the capacitor; the cross-shaped metal and the peripheral square metal are provided with upward through holes; the metal in the middle of the upper edge and the lower edge of the peripheral square metal is broken to form a square bracket shape; the redundant capacitor part is as follows: removing cross metal on the basis of the effective capacitance part, wherein comb-shaped metal is connected with a lower polar plate of the capacitor;
the x+2n layer metal, the effective capacitance part includes: the middle cross metal and the peripheral square metal are connected to the upper polar plate of the capacitor, the peripheral square metal is connected to the lower polar plate of the capacitor, and 4 quadrants formed by taking the cross metal as the y axis of the x axis are provided with comb-shaped metals in different directions; the comb-shaped metal covers the comb-shaped metal of the upper polar plate of the first x+1 layer capacitor, the cross-shaped metal is provided with an upward through hole, and half of the peripheral square metal is provided with an upward through hole; the redundant capacitor part is as follows: and removing the cross metal and the through holes on the peripheral square metal on the basis of the effective capacitance part.
Preferably, comb-shaped metals connected with the upper polar plate of the capacitor and comb-shaped metals connected with the lower polar plate of the capacitor in the (x+1) th layer of metal are alternately distributed.
Preferably, the line width of the comb-shaped metal in the x-th layer metal is larger than the line width of the comb-shaped metal in the x+1-th layer metal.
Preferably, the comb-shaped metal in the x-th metal covers the upper electrode plate in the x+1-th metal.
Preferably, the line width of the comb-shaped metal in the x+2 layer metal is the same as the line width of the comb-shaped metal in the x layer metal.
The beneficial effects of the application are as follows: according to the application, the whole layer of the metal layer is connected to the lower polar plate, and the upper polar plate is covered by the wide metal, so that the capacitance in the vertical direction is increased, meanwhile, the parasitic capacitance of the upper polar plate can be effectively avoided, and the matching degree is not influenced by the lower polar plate of the capacitance, so that the clean capacitance of the upper polar plate can ensure the matching between capacitance units. Each layer is formed by cross-shaped and peripheral square metal, and in the layer with the side wall capacitance, 4 quadrants formed by taking the cross shape as an x-axis and a y-axis are all formed by finger-inserted metal in different directions to form the side wall capacitance.
Drawings
FIG. 1 is a schematic diagram of the layering of a capacitive element for a high precision capacitive array of the present application;
FIG. 2 is a schematic diagram of a prior art capacitor implementation;
FIG. 3 is a schematic diagram of four capacitors in the present application;
fig. 4 is a diagram of four capacitor layouts in the present application.
Detailed Description
The application will be further described with reference to the accompanying drawings.
Referring to fig. 1-4, a capacitor unit for a high-precision capacitor array according to the present application includes: an x layer metal, an x+1 layer metal, an x+2 layer metal, an x+2n+1 layer metal. x is more than or equal to 2 and is a positive integer, and n is more than or equal to 1 and is a positive integer.
The x-th layer metal, the effective capacitance part comprises: the middle cross metal and the periphery square metal are provided with comb-shaped metals in different directions in 4 quadrants formed by taking the cross metal as an x-axis and a y-axis; the comb-shaped metal is connected with cross-shaped metal and peripheral square metal, and the x-th metal is used as a part of the lower polar plate of the capacitor; the peripheral square metal is provided with an upward through hole, and the redundant capacitor part is the same as the effective capacitor part; wherein x is more than or equal to 2 and is a positive integer;
the x+1 layer metal, the effective capacitance part includes: the middle cross metal and the peripheral square metal are connected to the upper polar plate of the capacitor, the peripheral square metal is connected to the lower polar plate of the capacitor, and 4 quadrants formed by taking the cross metal as the y axis of the x axis are provided with comb-shaped metals in different directions; half of the comb-shaped metal is connected with the upper polar plate of the capacitor, and the other half is connected with the lower polar plate of the capacitor; the cross metal and the peripheral square metal are provided with upward through holes, and the redundant capacitor part is as follows: removing cross metal on the basis of the effective capacitance part, wherein comb-shaped metal is connected with a lower polar plate of the capacitor;
the x+2 layer metal, the effective capacitance part includes: the middle cross metal and the peripheral square metal are connected to the upper polar plate of the capacitor, the peripheral square metal is connected to the lower polar plate of the capacitor, and 4 quadrants formed by taking the cross metal as the y axis of the x axis are provided with comb-shaped metals in different directions; the comb-shaped metal covers the comb-shaped metal of the upper electrode plate of the capacitor of the (x+1) th metal layer, and upward through holes are formed in the cross-shaped metal and the peripheral square metal; the redundant capacitor part is as follows: removing cross metal on the basis of the effective capacitance part;
the metal layer number comprises an x layer to an x+2n+1 layer, wherein n is more than or equal to 1 and is a positive integer;
the x+2n+1 layer metal, the effective capacitance part includes: square bracket shaped metal with square periphery; the redundant capacitor portion is free of metal at this level.
When n is more than or equal to 2, the metal shapes and the through hole shapes of the effective capacitor part and the redundant capacitor part of the (x+2i) -1 th layer are the same as those of the corresponding (x+1) th layer; wherein i=1, 2 … n-1; the metal shape and the through hole shape of the effective capacitor part and the redundant capacitor part of the x+2i layer are the same as those of the corresponding x layer; wherein i=1, 2 … n-1;
the capacitive unit for a high-precision capacitive array of the present application further includes:
an x+2n-1 layer metal, the effective capacitance portion comprising: the middle cross metal and the peripheral square metal are connected to the upper polar plate of the capacitor, the peripheral square metal is connected to the lower polar plate of the capacitor, and 4 quadrants formed by taking the cross metal as the y axis of the x axis are provided with comb-shaped metals in different directions; half of the comb-shaped metal is connected with the upper polar plate of the capacitor, and the other half is connected with the lower polar plate of the capacitor; the cross-shaped metal and the peripheral square metal are provided with upward through holes; the metal in the middle of the upper edge and the lower edge of the peripheral square metal is broken to form a square bracket shape; the redundant capacitor part is as follows: removing cross metal on the basis of the effective capacitance part, wherein comb-shaped metal is connected with a lower polar plate of the capacitor;
the x+2n layer metal, the effective capacitance part includes: the middle cross metal and the peripheral square metal are connected to the upper polar plate of the capacitor, the peripheral square metal is connected to the lower polar plate of the capacitor, and 4 quadrants formed by taking the cross metal as the y axis of the x axis are provided with comb-shaped metals in different directions; the comb-shaped metal covers the comb-shaped metal of the upper polar plate of the first x+1 layer capacitor, the cross-shaped metal is provided with an upward through hole, and half of the peripheral square metal is provided with an upward through hole; the redundant capacitor part is as follows: and removing the cross metal and the through holes on the peripheral square metal on the basis of the effective capacitance part.
The application can increase or decrease metal layers according to the metal conditions of the process. When n=2, 6 layers are included: the x layer metal, the x+1 layer metal, the x+2 layer metal, the x+3 layer metal, the x+4 layer metal, the x+5 layer metal, the x layer metal and the x+5 layer metal are used as upper and lower layers. As shown in fig. 1. If the metal layers need to be increased or decreased, the increased or decreased layers are the same as the metal layers of the x+1 layer and the metal layers of the x+2 layer in shape, and are increased or decreased in pairs. If it is desired to reduce to the minimum level 4 (n=1), the x+1 level metal of the 6-level structure is removed, the x+2 level metal is removed and the level of the x+3 level metal, the x+4 level metal, and the x+5 level metal of the 6-level structure are reduced by 2 levels. The 4 layers when n=1 are the minimum metal layers of the present application. When n=3, 2 layers of metal are added above the x+2 layers of metal of the 6-layer structure, the metal and the through hole are respectively the same as the x+1 layers of metal and the x+2 layers of metal, and the x+3 layers of metal, the x+4 layers of metal and the x+5 layers of metal of the 6-layer structure are all improved by 2 layers. When n >3, the addition is similar to n=3, and the addition of the x+1 layer metal and the x+2 layer metal of the 6-layer structure is continued.
In addition, the capacitor unit further comprises at least a first layer of metal1. Namely: the bottom metal is x layers, and x is at least 2, so that larger parasitic capacitance with the substrate is avoided. In the figure, metal (x) represents the Metal of the x-th layer, and so on.
This embodiment takes 6 layers of metal as an example, i.e., n=2. In fig. 1, the left side is an effective capacitance portion, and the right side is a corresponding redundant capacitance portion. The redundant capacitor portion is used to fill the boundary of the active capacitor and the upper plate of the array is routed outward.
Fig. 3 is a schematic diagram of 4 capacitors, implemented with the capacitive unit of the present application as shown in fig. 4. The redundant capacitor is surrounded by a circle of C1-C4 capacitors. The upper electrode plates of the C1-C4 capacitors are longitudinally connected with wiring through the metal of the (x+3) th layer in the figure, and are externally wired through redundant capacitor wiring channels until the peripheries of the capacitor arrays are transversely communicated. The lower electrode plate of the capacitor of C1-C4 is longitudinally routed by the x+5 layer metal, wherein the through holes of the x+5 layer metal and the x+4 layer metal of C1 are on the left side, the through holes of the x+5 layer metal and the x+4 layer metal of C2 are on the right side, the through holes of the x+5 layer metal and the x+4 layer metal of C3 are on the left side, and the through holes of the x+5 layer metal and the x+4 layer metal of C4 are on the right side.
In summary, the upper polar plate and the lower polar plate of the capacitor are distinguished firstly, the upper polar plate is ensured to be clean at the cost of increasing the parasitic capacitance of the lower polar plate, and in addition, the unidirectional side wall capacitance is changed, so that the multidirectional effective capacitance is realized in the capacitor unit.
The above embodiments are provided for illustrating the present application and not for limiting the present application, and various changes and modifications may be made by one skilled in the relevant art without departing from the spirit and scope of the present application, and thus all equivalent technical solutions should be defined by the claims.
Claims (6)
1. A capacitive element for a high precision capacitive array, comprising:
the x-th layer metal, the effective capacitance part comprises: the middle cross metal and the periphery square metal are provided with comb-shaped metals in different directions in 4 quadrants formed by taking the cross metal as an x-axis and a y-axis; the comb-shaped metal is connected with cross-shaped metal and peripheral square metal, and the x-th metal is used as a part of the lower polar plate of the capacitor; the peripheral square metal is provided with an upward through hole, and the redundant capacitor part is the same as the effective capacitor part; wherein x is more than or equal to 2 and is a positive integer;
the x+1 layer metal, the effective capacitance part includes: the middle cross metal and the peripheral square metal are connected to the upper polar plate of the capacitor, the peripheral square metal is connected to the lower polar plate of the capacitor, and 4 quadrants formed by taking the cross metal as the y axis of the x axis are provided with comb-shaped metals in different directions; half of the comb-shaped metal is connected with the upper polar plate of the capacitor, and the other half is connected with the lower polar plate of the capacitor; the cross metal and the peripheral square metal are provided with upward through holes, and the redundant capacitor part is as follows: removing cross metal on the basis of the effective capacitance part, wherein comb-shaped metal is connected with a lower polar plate of the capacitor;
the x+2 layer metal, the effective capacitance part includes: the middle cross metal and the peripheral square metal are connected to the upper polar plate of the capacitor, the peripheral square metal is connected to the lower polar plate of the capacitor, and 4 quadrants formed by taking the cross metal as the y axis of the x axis are provided with comb-shaped metals in different directions; the comb-shaped metal covers the comb-shaped metal of the upper electrode plate of the capacitor of the (x+1) th metal layer, and upward through holes are formed in the cross-shaped metal and the peripheral square metal; the redundant capacitor part is as follows: removing cross metal on the basis of the effective capacitance part;
the metal layer number comprises an x layer to an x+2n+1 layer, wherein n is more than or equal to 1 and is a positive integer;
the x+2n+1 layer metal, the effective capacitance part includes: square bracket shaped metal with square periphery; the redundant capacitor portion is free of metal at this level.
2. The capacitor unit for a high-precision capacitor array according to claim 1, wherein when n is equal to or greater than 2, the metal shapes and via shapes of the effective capacitor portion and the redundant capacitor portion of the x+2i-1 th layer are the same as those of the corresponding x+1 th layer; wherein i=1, 2 … n-1; the metal shape and the through hole shape of the effective capacitor part and the redundant capacitor part of the x+2i layer are the same as those of the corresponding x layer; wherein i=1, 2 … n-1;
further comprises:
an x+2n-1 layer metal, the effective capacitance portion comprising: the middle cross metal and the peripheral square metal are connected to the upper polar plate of the capacitor, the peripheral square metal is connected to the lower polar plate of the capacitor, and 4 quadrants formed by taking the cross metal as the y axis of the x axis are provided with comb-shaped metals in different directions; half of the comb-shaped metal is connected with the upper polar plate of the capacitor, and the other half is connected with the lower polar plate of the capacitor; the cross-shaped metal and the peripheral square metal are provided with upward through holes; the metal in the middle of the upper edge and the lower edge of the peripheral square metal is broken to form a square bracket shape; the redundant capacitor part is as follows: removing cross metal on the basis of the effective capacitance part, wherein comb-shaped metal is connected with a lower polar plate of the capacitor;
the x+2n layer metal, the effective capacitance part includes: the middle cross metal and the peripheral square metal are connected to the upper polar plate of the capacitor, the peripheral square metal is connected to the lower polar plate of the capacitor, and 4 quadrants formed by taking the cross metal as the y axis of the x axis are provided with comb-shaped metals in different directions; the comb-shaped metal covers the comb-shaped metal of the upper polar plate of the first x+1 layer capacitor, the cross-shaped metal is provided with an upward through hole, and half of the peripheral square metal is provided with an upward through hole; the redundant capacitor part is as follows: and removing the cross metal and the through holes on the peripheral square metal on the basis of the effective capacitance part.
3. The capacitor unit for a high-precision capacitor array of claim 1, wherein the comb-shaped metal of the x+1 layer metal connected to the upper plate of the capacitor and the comb-shaped metal connected to the lower plate of the capacitor are alternately distributed.
4. The capacitive unit for a high-precision capacitive array of claim 1, wherein the line width of the comb metal in the x-th layer metal is larger than the line width of the comb metal in the x+1-th layer metal.
5. The capacitive unit for high precision capacitive arrays of claim 1 wherein the x-th layer of metal middle comb metal covers the x+1-th layer of metal middle upper plate.
6. The capacitor unit for a high-precision capacitor array of claim 1, wherein the line width of the comb metal in the x+2 layer metal is the same as the line width of the comb metal in the x layer metal.
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| CN202111465064.5A CN114203442B (en) | 2021-12-03 | 2021-12-03 | Capacitor unit for high-precision capacitor array |
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| CN202111465064.5A CN114203442B (en) | 2021-12-03 | 2021-12-03 | Capacitor unit for high-precision capacitor array |
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| CN214956872U (en) * | 2021-04-06 | 2021-11-30 | 物元半导体科技(北京)有限公司 | Silicon-based capacitor semiconductor structure |
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