CN114199885A - Wafer detection device and method thereof - Google Patents
Wafer detection device and method thereof Download PDFInfo
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- CN114199885A CN114199885A CN202111500606.8A CN202111500606A CN114199885A CN 114199885 A CN114199885 A CN 114199885A CN 202111500606 A CN202111500606 A CN 202111500606A CN 114199885 A CN114199885 A CN 114199885A
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Abstract
The invention discloses a wafer detection device and a method thereof, wherein a wafer comprises a first surface, a second surface and edge vertex surfaces connected with the first surface and the second surface which are oppositely arranged, the first surface is connected with the edge vertex surface through a first edge chamfer surface, and the second surface is connected with the edge vertex surface through a second edge chamfer surface; the detection light beam reflected or scattered by the first edge chamfer surface is guided to the microscope optical system unit through the first optical path adjusting element and is incident to the image acquisition unit, the detection light beam reflected or scattered by the second edge chamfer surface is guided to the microscope optical system unit through the second optical path adjusting element and is incident to the image acquisition unit, and then the image acquisition unit can simultaneously acquire images of the first edge chamfer surface, the second edge chamfer surface and the edge vertex surface, so that the wafer edge is covered in a plurality of areas under the same focal depth of the image acquisition unit, and the total detection beat time is reduced.
Description
Technical Field
The embodiment of the invention relates to the technical field of wafer detection, in particular to a wafer detection device and a method thereof.
Background
In the semiconductor integrated circuit process, the wafer is subjected to glue coating, exposure, development, high temperature oxidation, diffusion and other processes. With the rapid development of moore's law, the size of microelectronic devices is continuously reduced, the process is more and more complex, and the quality requirement for completion in a single-step process is higher and higher. At each step of the above process, it is generally necessary to detect defects in the central region of the electronic device distribution. With the increase of the manufacturing cost of the wafer and the increase of the yield requirement, the wafer has the so-called edge effect, that is, the edge position of the wafer is easy to generate defects, such as burrs, broken edges, cracks, dislocation or various edge surface contaminations. These defects can have a fatal effect on the performance of microelectronic devices and even cause the entire wafer to be rejected, and thus, the need for wafer edge inspection by integrated circuit manufacturers is becoming more stringent.
At present, the edge detection of an integrated circuit manufacturer is mainly based on a microscope, and an operator manually carries out film loading and utilizes personal experience to manually judge the wafer defects. The mode has low efficiency and poor repeatability, and data cannot be traced and analyzed.
Disclosure of Invention
The invention provides a wafer detection device and a method thereof, which are used for covering a plurality of areas on the edge of a wafer under the same focal depth of an image acquisition unit and reducing the total detection takt time.
In order to achieve the above object, an embodiment of an aspect of the present invention provides a wafer inspection apparatus, where the wafer includes a first surface and a second surface that are disposed opposite to each other, and an edge vertex surface connected to the first surface and the second surface, the first surface is connected to the edge vertex surface through a first edge chamfer surface, and the second surface is connected to the edge vertex surface through a second edge chamfer surface;
the wafer detection device comprises: the microscope comprises a first optical path adjusting element, a second optical path adjusting element, a microscope optical system unit and an image acquisition unit;
the first optical path adjusting element is positioned on one side of the first edge chamfer surface, which is far away from the second edge chamfer surface; the first optical path adjusting element is used for adjusting the optical path from the first detection light beam reflected or scattered by the first edge chamfer surface to the image acquisition unit through the microscope optical system unit;
the second optical path adjusting element is positioned on one side of the second edge chamfer surface, which is far away from the first edge chamfer surface; the second optical path adjusting element is used for adjusting the optical path of the second detection light beam reflected or scattered by the second edge chamfer surface from the microscope optical system unit to the image acquisition unit in sequence;
the third detection light beam reflected or scattered by the edge vertex surface passes through the microscope optical system unit to the image acquisition unit, the image acquisition unit is used for acquiring the first detection light beam, the second detection light beam and the third detection light beam, each detection light beam is imaged at the same image surface position of the microscope optical system unit, the first surface and the second surface are parallel to the optical axis of the microscope optical system unit, and the focal surfaces of the edge vertex surface and the image acquisition unit are perpendicular to the optical axis of the microscope optical system unit.
According to an embodiment of the present invention, the first optical path adjusting element is a first planar mirror, the second optical path adjusting element is a second planar mirror, and the first planar mirror and the second planar mirror are both translatable in a first direction or a second direction, and rotatable about a third direction, wherein the first direction is a direction of an optical axis of the microscope optical system unit, the second direction is a direction in which the second surface is perpendicularly directed to the first surface, and the third direction is a direction perpendicular to both the first direction and the second direction.
According to one embodiment of the invention, the first plane mirror forms an angle θ with the first surfacemirror1An included angle theta between the first edge chamfer surface and the first surfacebavel1The following relation is satisfied:
an included angle theta between the second plane reflector and the second surfacemirror2An included angle theta between the second edge chamfer surface and the second surfacebavel2The following relation is satisfied:
according to an embodiment of the present invention, a distance Z from any point on the first edge-chamfered surface to the first planar mirrormirror1And said arbitrary point to said displayDistance X of micromirror optical system unitmirror1The following relation is satisfied: zmirror1+Xmirror1＝Xapex；
A distance Z from any point on the second edge chamfer surface to the second planar reflectormirror2And the distance X from any point to the microscope optical system unitmirror2The following relation is satisfied: zmirror2+Xmirror2＝XapexWherein X isapexThe distance between any point on the edge vertex surface and the microscope optical system unit.
According to an embodiment of the present invention, the microscope optical system unit includes a microscope optical system through which the first detection light beam, the second detection light beam, and the third detection light beam are incident to the image pickup unit.
According to an embodiment of the present invention, the microscope optical system unit includes three microscope optical systems, the first detection light beam is incident to the image pickup unit through a first microscope optical system, the second detection light beam is incident to the image pickup unit through a second microscope optical system, and the third detection light beam is incident to the image pickup unit through a third microscope optical system.
According to an embodiment of the present invention, the image capturing unit includes an area-array camera, the first detecting light beam, the second detecting light beam, and the third detecting light beam are incident to the area-array camera after passing through the microscope optical system unit, and the area-array camera images the first detecting light beam, the second detecting light beam, and the third detecting light beam onto a same focal plane.
According to an embodiment of the present invention, the image capturing unit includes three area-array cameras, the first detection beam passes through the microscope optical system unit and then enters the first area-array camera, and the first area-array camera images the first detection beam; the second detection light beam enters a second area-array camera after passing through the microscope optical system unit, and the second area-array camera images the second detection light beam; and the third detection light beam enters a third area-array camera after passing through the microscope optical system unit, and the third area-array camera images the third detection light beam.
According to an embodiment of the present invention, the wafer inspection apparatus further includes: the fourth array camera is located the first surface is kept away from one side of the second surface, the fifth array camera is located the second surface is kept away from one side of the first surface, the fourth array camera is used for imaging the first surface, and the fifth array camera is used for imaging the second surface.
In order to achieve the above object, another embodiment of the present invention further provides a wafer inspection method, which is implemented based on the wafer inspection apparatus described above, and includes the following steps:
controlling the wafer to be tested to rotate along the central shaft of the wafer to be tested;
acquiring a first edge chamfer and a second edge chamfer of the wafer to be detected;
adjusting the rotation angle of the first optical path adjusting element and the relative position of the first optical path adjusting element and the wafer to be detected according to the first edge chamfer;
adjusting the rotation angle of the second optical path adjusting element and the relative position of the second optical path adjusting element and the wafer to be detected according to the second edge chamfer;
so that the emission directions of the first detection light beam and the second detection light beam are the same as the emission direction of the third detection light beam, the emission directions being parallel to the optical axis direction of the microscope optical system unit;
imaging the first edge chamfer surface according to the first detection light beam; imaging the second edge chamfer surface according to the second detection light beam; and imaging the edge vertex surface according to the third detection light beam, wherein each detection light beam is imaged at the same image surface position of the microscope optical system unit.
According to the wafer detection device and the method thereof provided by the embodiment of the invention, the wafer comprises a first surface, a second surface and an edge vertex surface, wherein the first surface and the second surface are oppositely arranged, the edge vertex surface is connected with the first surface and the second surface, the first surface is connected with the edge vertex surface through a first edge chamfer surface, and the second surface is connected with the edge vertex surface through a second edge chamfer surface; the detection light beams reflected or scattered by the first edge chamfer surface and the second chamfer surface are guided to the microscope optical system unit by the first optical path adjusting element and the second optical path adjusting element, are imaged at the image surface position of the edge vertex surface of the microscope optical system unit and then enter the image acquisition unit, and the image acquisition unit can simultaneously acquire images of the first edge chamfer surface, the second edge chamfer surface and the edge vertex surface, so that a plurality of areas of the edge of the wafer are covered under the same focal depth of the image acquisition unit, and the total detection takt time is reduced.
Drawings
FIG. 1 is a top view of a wafer;
FIG. 2 is a cross-sectional view taken along direction AA' in FIG. 1;
fig. 3 is a schematic structural diagram of a wafer inspection apparatus according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a wafer inspection apparatus according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a wafer inspection apparatus according to another embodiment of the present invention;
fig. 6 is a schematic structural diagram of a wafer inspection apparatus according to another embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a wafer inspection apparatus according to yet another embodiment of the present invention;
fig. 8 is a schematic structural diagram of a wafer inspection apparatus according to another embodiment of the present invention;
fig. 9 is a flowchart of a wafer inspection method according to an embodiment of the invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Fig. 1 is a top view of a wafer. Fig. 2 is a cross-sectional view along AA' in fig. 1. It is noted that the edge profiles in the figures are not true to scale. As shown in fig. 1 and 2, the material of the wafer includes silicon, polysilicon, etc., and new materials are emerging, which are generally circular in shape and vary in size from 3 inches to 12 inches in diameter, according to the international society for semiconductor industry (SEMI) standards. Generally, the edge of the wafer substrate is composed of an upper chamfer surface 1, a lower chamfer surface 2 and an apex surface 3 as shown in fig. 2. The length of the edge chamfer is generally about 0.5mm along the radial direction of the wafer substrate; the included angle may vary from about 20 to about 80 with respect to the surface of the wafer substrate.
Automatic Optical Inspection equipment (AOI) has become a technological development trend by virtue of its ability to quickly and accurately identify and locate defects instead of conventional manual visual Inspection, and is increasingly widely used in the field of semiconductor integrated circuit production.
Currently, the defect size of interest to the user is typically on the order of 1um to hundreds of um at the edge of the wafer substrate. For such small defects, imaging systems of automated Optical Inspection equipment (AOI) are generally required to have higher resolving power. The depth of focus of an optical system satisfying this resolving power is generally in the range of tens of um to hundreds of um. Compared with the limited focal depth, if the edge area needs to be completely covered and detected, the edge area can be detected only by stepping the optical machine for multiple times along the direction of the optical axis. This method can reduce the yield by increasing the overall detection tact time.
Therefore, the invention provides a wafer detection device and a method thereof. So as to reduce the whole detection beat time and improve the yield.
Fig. 3 is a schematic structural diagram of a wafer inspection apparatus according to an embodiment of the present invention. As shown in fig. 3, the wafer 100 includes a first surface 104 and a second surface 105 disposed opposite to each other and an edge vertex surface 103 connected to the first surface 104 and the second surface 105, the first surface 104 is connected to the edge vertex surface 103 through a first edge chamfer surface 102, and the second surface 105 is connected to the edge vertex surface 103 through a second edge chamfer surface 102;
the wafer inspection apparatus 200 includes: a first optical path adjusting element 201, a second optical path adjusting element 202, a microscope optical system unit 203, and an image acquisition unit 204;
the first optical path adjusting element 201 is located on the side of the first edge-chamfered surface 101 away from the second edge-chamfered surface 102; the first optical path adjusting element 201 is used for adjusting the optical path of the first detection light beam 205 reflected or scattered by the first edge chamfer 101 from the microscope optical system unit 203 to the image acquisition unit 204;
the second optical path adjusting element 202 is located on the side of the second edge-chamfered surface 102 away from the first edge-chamfered surface 101; the second optical path adjusting element 202 is configured to adjust an optical path of the second detection light beam 206 reflected or scattered by the second edge chamfer 102 from the microscope optical system unit 203 to the image acquisition unit 204 in sequence;
the third detection light beam 207 reflected or scattered by the edge vertex plane 103 passes through the microscope optical system unit 203 to the image acquisition unit 204, the image acquisition unit 204 is configured to acquire the first detection light beam 205, the second detection light beam 206 and the third detection light beam 207, each of the detection light beams is imaged at the same image plane position of the microscope optical system unit, wherein the first surface 104 and the second surface 105 are parallel to the optical axis of the microscope optical system unit 203, and the focal planes of the edge vertex plane 103 and the image acquisition unit 204 are perpendicular to the optical axis of the microscope optical system unit 203.
It should be noted that the wafer inspection apparatus 200 further includes a bright field light source and a dark field light source, and those skilled in the art can arrange the bright field light source and the dark field light source according to actual requirements, which is not limited in the invention.
A first detection light beam 205 formed by reflecting or scattering a light beam emitted by a light source by a first edge chamfer 101 of the wafer 100 is incident on a first optical path adjusting element 201, the first optical path adjusting element 201 adjusts the optical path and direction of the first detection light beam 205 to form a light beam parallel to the optical axis of the microscope optical system unit 203, the light beam is incident on the microscope optical system unit 203, modulated by the microscope optical system unit 203, incident on an image acquisition unit 204, captured by the image acquisition unit 204, and an image of the first edge chamfer 101 is formed on the image acquisition unit 204.
A third detection light beam 207 formed by reflecting or scattering the light beam emitted by the light source by the edge vertex surface 103 of the wafer 100 is modulated by the microscope optical system unit 203, enters the image acquisition unit 204, is captured by the image acquisition unit 204, and forms an edge vertex image on the image acquisition unit 204;
the second detection light beam 206 formed by the second edge chamfer 102 of the wafer 100 after reflecting or scattering the light beam emitted by the light source is incident on the second optical path adjusting element 202, the second optical path adjusting element 202 adjusts the optical path and direction of the second detection light beam 206 to form a light beam parallel to the optical axis of the microscope optical system unit 203, and the light beam is incident on the microscope optical system unit 203, modulated by the microscope optical system unit 203, incident on the image acquisition unit 204, captured by the image acquisition unit 204, and an image of the second edge chamfer 102 is formed on the image acquisition unit 204.
It is understood that in this embodiment, the wafer 100 is fixed on the substrate stage and driven by the substrate stage to rotate around the central axis of the wafer, and the wafer inspection apparatus 200 is fixed, so that after the wafer 100 rotates one circle, the image of the edge of the wafer 100 is captured by the image capturing unit 204, and the image capturing of the edge of the wafer 100 is completed. Or, the wafer 100 is fixed, and the wafer inspection apparatus 200 rotates around the central axis of the wafer, so that after the wafer inspection apparatus 200 rotates for one circle, the image of the edge of the wafer 100 is captured by the image capturing unit 204, and the image capturing of the edge of the wafer 100 is completed.
Therefore, after the first detection light beam 205 is adjusted by the first optical path adjusting element 201, the optical path before the light beam enters the microscope optical system unit 203, the optical path before the second detection light beam 206 is adjusted by the second optical path adjusting element 202, the optical path before the light beam enters the microscope optical system unit 203, and the optical path before the third detection light beam 207 enters the microscope optical system unit 203 are the same, that is, the optical paths when the first detection light beam 205, the second detection light beam 206, and the third detection light beam 207 reach the microscope optical system unit 203 are the same, so that each detection light beam reaches the image acquisition unit 204 after being modulated by the microscope optical system unit, the image acquisition unit 204 images each detection light beam at the same time, the utilization rate of the focal depth is improved, the edge chamfer and the vertex area are imaged to the same working plane, and the parallelism of the two is ensured, and the yield is improved, under the condition of the same focal depth, more areas can be covered, and the total detection beat time is reduced.
According to an embodiment of the present invention, as shown in fig. 4, the first optical path adjusting element 201 is a first planar mirror, the second optical path adjusting element 202 is a second planar mirror, and the first planar mirror and the second planar mirror are both translatable along a first direction x or a second direction z, and rotatable around a third direction y, wherein the first direction x is a direction of an optical axis of the microscope optical system unit 203, the second direction z is a direction in which the second surface 105 is perpendicularly directed to the first surface 104, and the third direction y is a direction perpendicular to both the first direction x and the second direction z.
According to one embodiment of the present invention, as shown in FIG. 4, the first plane mirror forms an angle θ with the first surface 104mirror1An angle θ between the first edge chamfer 101 and the first surface 104bevel1The following relation is satisfied:
the second plane mirror forms an angle theta with the second surface 105mirror2An included angle θ between the second edge chamfer 102 and the second surface 105bevel2The following relation is satisfied:
in addition, θmirror1And thetabevel1Satisfy the relationship
In the meantime, the light beam incident on the first edge chamfered surface 101 from the light source is vertically incident, and in this relationship, the light beam vertically reflected or scattered by the first edge chamfered surface 101 is reflected by the first plane mirror and exits parallel to the first surface 104 to the microscope optical system unit 203, which changes the direction of the first detection light beam 205; likewise, θmirror2And thetabevel2Satisfy the relationship
In this case, the light beam incident on the second edge chamfered surface 102 from the light source is vertically incident, and in this relationship, the light beam vertically reflected or scattered by the second edge chamfered surface 102 is reflected by the second plane mirror and exits parallel to the second surface 105 to the microscope optical system unit 103, which changes the direction of the second detection light beam 206. It should be understood that the light incident on the edge vertex plane 103 is also perpendicularly incident on the edge vertex plane 103, and the third detection beam 207 formed by the perpendicular reflection or scattering of the edge vertex plane 103 is parallel to the first surface 104 or the second surface 105, wherein the first surface 104 and the second surface 105 are parallel to each other, so that the first detection beam 205, the second detection beam 206, and the third detection beam 207 are parallel to the first surface 104 or the second surface 105 of the wafer 100, and exit in the same direction, and enter the microscope optics unit 203.
Wherein, since the edge chamfers of the wafers 100 of each lot are different, the included angle θ between the first plane mirror and the first surface can be adjusted according to the constraint conditionmirror1Or the angle theta between the second plane mirror and the second surfacemirror2The specific implementation manner is that the direction parallel to the optical axis of the microscope optical system unit 203 is taken as the x-axis, the direction in which the second surface of the wafer vertically points to the first surface is taken as the z-axis, and the direction perpendicular to the x-axis and the z-axis is taken as the directionyShaft for adjusting the first plane mirrorEdge ofyThe shaft is rotated to change the angle theta between the first plane mirror and the first surfacemirror1Similarly, the second plane mirror is adjusted to rotate along the y-axis, so as to change the included angle theta between the second plane mirror and the second surfacemirror2Thereby accommodating edge rounding of wafers 100 of different lots.
It should be noted that the conditions that are satisfied here are that the image capturing unit 204 and the edge fixing surface 103 are both perpendicular to the optical axis of the microscope optical system unit 203, and the first surface 104 and the second surface 105 of the wafer substrate are parallel to the optical axis of the microscope optical system unit 203. Similar improvements can be made to engineers working in the optical field, but the final purpose is to satisfy the condition that the chamfer edge and the vertex edge are in the working plane of the microscope, and ensure that the chamfer edge and the vertex edge have a parallel geometric position relationship, and the influence of the edge inclination on the focal depth is reduced.
According to an embodiment of the present invention, as shown in fig. 4, a distance Z from any point on the first edge-chamfered surface 101 to the first planar mirrormirror1And the distance X from any point to the microscope optical system unit 203mirror1The following relation is satisfied: zmirror1+Xmirror1＝Xapex；
The distance Z from any point on the second edge-chamfered surface 102 to the second planar mirrormirror2And the distance X from any point to the microscope optical system unit 203mirror2The following relation is satisfied: zmirror2+Xmirror2＝XapexWherein X isapexIs the distance from any point on the edge vertex plane 103 to the microscope optical system unit 203.
It is understood that, since the edge vertex surface 103 is closer to the reference surface of the microscope optical system unit 203 than the first edge chamfer surface 101 and the second edge chamfer surface 102, in this case, for the same microscope optical system unit 203, Z is mademirror1+Xmirror1＝XapexAnd Zmirror2+Xmirror2＝XapexThis difference is cancelled out, thereby causing a third detection of reflection or scattering by the edge vertex plane 103The side light beam 207, the first detection light beam 205 reflected or scattered by the first edge chamfer 101, and the second detection light beam 206 reflected or scattered by the second edge chamfer 102 all reach the reference surface of the microscope optical system unit 203 at the same time. It should be noted that, on the basis of satisfying the angle constraint, that is, on the basis of keeping the same emission directions of the detection beams on the three surfaces of the edge of the wafer 100, it is also necessary to ensure that the optical paths from the respective detection beams to the microscope optical system unit 203 are the same. Wherein, when the angle constraint condition is satisfied, only the first plane mirror or the second plane mirror edge is adjustedyAfter the angle is adjusted, the first plane mirror or the second plane mirror may be adjusted to translate along the x axis or the z axis, so that each detection light beam exits parallel to the optical axis of the microscope optical system unit 203, and the optical paths reaching the reference plane of the microscope optical system unit 203 are the same. In a preferred embodiment, the plane mirror may be adjusted to translate along the x-axis to ensure that the edge-chamfered surface is within the mirror surface of the plane mirror, and if the optical path is not the same as the third detection beam, the plane mirror may be translated along the z-axis.
It should be noted that X can also be compensated by additional optical compensation measuresapexThe compensation adjustment is performed to make the above constraint condition be satisfied, specifically, the optical compensation measure, similar to the optical zooming principle, has many ways, and a group of zoom lens groups, which can be a simple mirror group, or an optical compensation plate, are added, and will not be described in detail here.
According to an embodiment of the present invention, as shown in fig. 4, the microscope optical system unit 203 includes a microscope optical system through which the first detection light beam 205, the second detection light beam 206, and the third detection light beam 207 are incident to the image capturing unit 204.
The image capturing unit 204 may include an area-array camera, and the first detecting light beam 205, the second detecting light beam 206, and the third detecting light beam 207 are incident to the area-array camera after passing through the microscope optical system unit 203, and the area-array camera images the first detecting light beam 205, the second detecting light beam 206, and the third detecting light beam 207 on the same focal plane.
That is to say, the three detection light beams are all modulated by using the same microscope optical system, and the three detection light beams are imaged by using the same area-array camera, that is, the first edge chamfer surface 101, the second edge chamfer surface 102 and the edge vertex surface 103 can be imaged at different positions of the area-array camera through the microscope optical system, and it is ensured that images of the first edge chamfer surface 101 and the second edge chamfer surface 102 by the first plane mirror and the second plane mirror are parallel to the edge vertex surface 103 and located on a surface at the same working distance, so that simultaneous imaging of the first edge chamfer surface 101, the second edge chamfer surface 102 and the edge vertex surface 103 is realized. The embodiment reduces the cost, and the number of the cameras can be reduced by imaging the edges of different areas in the same plane to different areas of the area-array camera through the optical microscope system.
According to an embodiment of the present invention, as shown in fig. 5, the microscope optical system unit 203 includes a microscope optical system through which the first detection light beam 205, the second detection light beam 206, and the third detection light beam 207 are incident to the image capturing unit 204.
The image acquisition unit 204 includes three area-array cameras, the first detection light beam 205 passes through the microscope optical system unit 203 and then enters the first area-array camera 2041, and the first area-array camera 2041 images the first detection light beam 205; the second detection light beam 206 passes through the microscope optical system unit 203 and then enters the second area-array camera 2042, and the second area-array camera 2042 images the second detection light beam 206; the third detection light beam 207 passes through the microscope optical system unit 203 and then enters the third area-array camera 2043, and the third area-array camera 2043 images the third detection light beam 207.
That is to say, the microscope optical system unit 203 is a microscope optical system, and each detection light beam is incident to the corresponding area array camera after passing through the microscope optical system, in this embodiment, different detection light beams are imaged by different area array cameras, so as to avoid that the field angle of the area array camera is not enough to detect all wafer edges, which is beneficial to improving the speed of image acquisition and processing.
According to an embodiment of the present invention, as shown in fig. 6, the microscope optical system unit 203 includes three microscope optical systems, the first detection light beam 205 is incident to the image pickup unit 204 through the first microscope optical system 2031, the second detection light beam 206 is incident to the image pickup unit 204 through the second microscope optical system 2032, and the third detection light beam 207 is incident to the image pickup unit 204 through the third microscope optical system 2033.
The image capturing unit 204 may include an area-array camera, and the first detecting light beam 205, the second detecting light beam 206, and the third detecting light beam 207 are incident to the area-array camera after passing through the microscope optical system unit 203, and the area-array camera images the first detecting light beam 205, the second detecting light beam 206, and the third detecting light beam 207 on the same focal plane.
In this embodiment, the microscope optical systems 203 are three, but the image pickup unit 204 is one area-array camera. The edge chamfering surface and the edge vertex surface are recorded at different pixel positions of the area-array camera, so that different positions of the edge area are captured by the single camera, and economical and compact wafer substrate edge detection is realized.
According to an embodiment of the present invention, as shown in fig. 7, the microscope optical system unit 203 includes three microscope optical systems, the first detection light beam 205 is incident to the image pickup unit 204 through the first microscope optical system 2031, the second detection light beam 206 is incident to the image pickup unit 204 through the second microscope optical system 2032, and the third detection light beam 207 is incident to the image pickup unit 204 through the third microscope optical system 2033.
The image acquisition unit 204 includes three area-array cameras, the first detection light beam 205 passes through the microscope optical system unit 203 and then enters the first area-array camera 2041, and the first area-array camera 2041 images the first detection light beam 205; the second detection light beam 206 passes through the microscope optical system unit 203 and then enters the second area-array camera 2042, and the second area-array camera 2042 images the second detection light beam 206; the third detection light beam 207 passes through the microscope optical system unit 203 and then enters the third area-array camera 2043, and the third area-array camera 2043 images the third detection light beam 207.
In this embodiment, the number of the microscope optical systems 203 is three, and the number of the image capturing units 204 may be three. And each detection light beam can form a clear image.
According to an embodiment of the present invention, as shown in fig. 8, the wafer inspection apparatus 200 further includes: a fourth array camera 208 and a fifth array camera 209, the fourth array camera 208 is located on the side of the first surface 104 away from the second surface 105, the fifth array camera 209 is located on the side of the second surface 105 away from the first surface 104, the fourth array camera 108 is used for imaging the first surface 104, and the fifth array camera 209 is used for imaging the second surface 105.
The area-array camera may be a CCD camera or a CMOS camera, but the invention is not limited thereto.
Fig. 9 is a flowchart of a wafer inspection method according to an embodiment of the invention. The method is implemented based on the wafer detection device, as shown in fig. 9, the method includes the following steps:
s101, controlling the wafer to be tested to rotate along the central shaft of the wafer to be tested;
in other embodiments, the wafer inspection apparatus may be controlled to rotate around the central axis of the wafer to be inspected.
Before S101, the whole machine initialization is also included or after the initialization is completed, the production is executed; the material to be measured (wafer) is loaded and fixed, wherein the material loading can be automatic or manual, and the fixing mode can be vacuum adsorption or mechanical clamping. After S101, the center position of the wafer substrate is calculated by taking a photo by rotation, which may also be performed in a front end module (EFEM) in the semiconductor device.
S102, acquiring a first edge chamfer and a second edge chamfer of a wafer to be detected;
the angles of the first edge chamfer and the second edge chamfer can be obtained by photographing through a fourth area-array camera or a fifth area-array camera.
S103, adjusting the rotation angle of the first optical path adjusting element and the relative position of the first optical path adjusting element and the wafer to be detected according to the first edge chamfer;
the first optical path adjusting element adjusts the first detection light beam reflected or scattered by the first edge chamfer surface to be parallel to the third detection light beam reflected or scattered by the edge vertex surface, and the first detection light beam and the third detection light beam simultaneously reach the microscope optical system unit.
S104, adjusting the rotation angle of the second optical path adjusting element and the relative position of the second optical path adjusting element and the wafer to be detected according to the second edge chamfer;
the second optical path adjusting element adjusts the second detection light beam reflected or scattered by the second edge chamfer surface to be parallel to the third detection light beam reflected or scattered by the edge vertex surface, and the second detection light beam and the third detection light beam simultaneously reach the microscope optical system unit.
S105, making the emitting directions of the first and second detection beams the same as the emitting direction of the third detection beam, the emitting directions being parallel to the optical axis direction of the microscope optical system unit;
according to the angle of the chamfer and the working distance of the microscope optical system, the rotation center of the optical path adjusting element and the distance between the optical path adjusting element and the surface of the wafer can be determined; the material difference of the inclined chamfers at different angles can be adapted through the adjustment of the angle and the adjustment of the distance relative to the surface of the wafer. It should be noted that the parameters are not necessarily the same as long as the constraint conditions are satisfied due to the difference between the first and second chamfers.
S106, imaging the first edge chamfer surface according to the first detection light beam; imaging the second edge chamfer surface according to the second detection light beam; and imaging the edge vertex surface according to a third detection light beam, wherein each detection light beam is imaged at the same image surface position of the microscope optical system unit.
Executing S101 to S106 again, rotating and taking a picture, wherein it is to be noted that for the same batch of materials, the above process can be recorded and saved as menu information for use of other subsequent similar materials, and S102 to S105 can be omitted; after the first photo is taken, a defect detection program can be executed to detect the defects; outputting and storing results of the size, the position and the like of the defect; if other actions exist, the steps can be repeated, and S102 to S105 can be omitted for similar materials in the same batch; if the detection is finished, the edge defect detection flow of the single wafer substrate is finished; if other materials need to be detected continuously, the steps from S101 to S106 can be repeated, and if not, the production of all the materials can be finished.
In summary, according to the wafer inspection apparatus and the method thereof provided by the embodiments of the present invention, the wafer includes the first edge chamfer surface and the second edge chamfer surface that are oppositely disposed, the edge vertex surface, and the first surface and the second surface that are oppositely disposed; the detection light beam reflected or scattered by the first edge chamfer surface is guided to the microscope optical system unit through the first optical path adjusting element and is incident to the image acquisition unit, the detection light beam reflected or scattered by the second edge chamfer surface is guided to the microscope optical system unit through the second optical path adjusting element and is incident to the image acquisition unit, and then the image acquisition unit can simultaneously acquire images of the first edge chamfer surface, the second edge chamfer surface and the edge vertex surface, so that the wafer edge is covered in a plurality of areas under the same focal depth of the image acquisition unit, and the total detection beat time is reduced.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A wafer detection device comprises a first surface, a second surface and an edge vertex surface, wherein the first surface and the second surface are oppositely arranged, the edge vertex surface is connected with the first surface and the second surface, the first surface is connected with the edge vertex surface through a first edge chamfer surface, and the second surface is connected with the edge vertex surface through a second edge chamfer surface;
it is characterized by comprising: the microscope comprises a first optical path adjusting element, a second optical path adjusting element, a microscope optical system unit and an image acquisition unit;
the first optical path adjusting element is positioned on one side of the first edge chamfer surface, which is far away from the second edge chamfer surface; the first optical path adjusting element is used for adjusting the optical path from the first detection light beam reflected or scattered by the first edge chamfer surface to the image acquisition unit through the microscope optical system unit;
the second optical path adjusting element is positioned on one side of the second edge chamfer surface, which is far away from the first edge chamfer surface; the second optical path adjusting element is used for adjusting the optical path of the second detection light beam reflected or scattered by the second edge chamfer surface from the microscope optical system unit to the image acquisition unit in sequence;
the third detection light beam reflected or scattered by the edge vertex surface passes through the microscope optical system unit to the image acquisition unit, the image acquisition unit is used for acquiring the first detection light beam, the second detection light beam and the third detection light beam, each detection light beam is imaged at the same image surface position of the microscope optical system unit, the first surface and the second surface are parallel to the optical axis of the microscope optical system unit, and the focal surfaces of the edge vertex surface and the image acquisition unit are perpendicular to the optical axis of the microscope optical system unit.
2. The wafer inspection device as claimed in claim 1, wherein the first optical path adjusting element is a first plane mirror, and the second optical path adjusting element is a second plane mirror; the first plane mirror and the second plane mirror are both capable of translating in a first direction or a second direction, and are capable of rotating around a third direction, wherein the first direction is a direction of an optical axis of the microscope optical system unit, the second direction is a direction in which the second surface is perpendicularly directed to the first surface, and the third direction is a direction perpendicular to both the first direction and the second direction.
3. The wafer detection apparatus as claimed in claim 2, wherein the first plane mirror forms an angle θ with the first surfacemirror1An included angle theta between the first edge chamfer surface and the first surfacebavel1The following relation is satisfied:
an included angle theta between the second plane reflector and the second surfacemirror2An included angle theta between the second edge chamfer surface and the second surfacebavel2The following relation is satisfied:
4. the wafer detection apparatus according to claim 3, wherein a distance Z from any point on the first edge-chamfered surface to the first planar mirrormirror1And the distance X from any point to the microscope optical system unitmirror1The following relation is satisfied: zmirror1+Xmirror1＝Xapex；
A distance Z from any point on the second edge chamfer surface to the second planar reflectormirror2And the distance X from any point to the microscope optical system unitmirror2The following relation is satisfied: zmirror2+Xmirror2＝XapexWherein X isapexThe distance between any point on the edge vertex surface and the microscope optical system unit.
5. The wafer inspection apparatus according to any one of claims 1 to 4, wherein the microscope optical system unit includes a microscope optical system, and the first inspection beam, the second inspection beam and the third inspection beam are incident on the image capturing unit through the microscope optical system.
6. The wafer inspection apparatus according to any one of claims 1 to 4, wherein the microscope optical system unit includes three microscope optical systems, the first inspection beam is incident to the image capturing unit through a first microscope optical system, the second inspection beam is incident to the image capturing unit through a second microscope optical system, and the third inspection beam is incident to the image capturing unit through a third microscope optical system.
7. The wafer inspection apparatus as claimed in any one of claims 1 to 4, wherein the image capturing unit includes an area-array camera, the first inspection beam, the second inspection beam and the third inspection beam are incident on the area-array camera after passing through the microscope optical system unit, and the area-array camera images the first inspection beam, the second inspection beam and the third inspection beam onto a same focal plane.
8. The wafer detection apparatus according to any one of claims 1 to 4, wherein the image acquisition unit includes three area-array cameras, the first detection beam passes through the microscope optical system unit and then enters a first area-array camera, and the first area-array camera images the first detection beam; the second detection light beam enters a second area-array camera after passing through the microscope optical system unit, and the second area-array camera images the second detection light beam; and the third detection light beam enters a third area-array camera after passing through the microscope optical system unit, and the third area-array camera images the third detection light beam.
9. The wafer inspection device of any one of claims 1-4, further comprising: the fourth array camera is located the first surface is kept away from one side of the second surface, the fifth array camera is located the second surface is kept away from one side of the first surface, the fourth array camera is used for imaging the first surface, and the fifth array camera is used for imaging the second surface.
10. A wafer inspection method implemented based on the wafer inspection apparatus as claimed in any one of claims 1 to 9, comprising the steps of:
controlling the wafer to be tested to rotate along the central shaft of the wafer to be tested;
acquiring a first edge chamfer and a second edge chamfer of the wafer to be detected;
adjusting the rotation angle of the first optical path adjusting element and the relative position of the first optical path adjusting element and the wafer to be detected according to the first edge chamfer;
adjusting the rotation angle of the second optical path adjusting element and the relative position of the second optical path adjusting element and the wafer to be detected according to the second edge chamfer;
the emergent directions of the first detection light beam and the second detection light beam are the same as the emergent direction of the third detection light beam, the emergent directions are parallel to the optical axis direction of the microscope optical system unit, and the detection light beams are imaged at the same image surface position of the microscope optical system unit;
imaging the first edge chamfer surface according to the first detection light beam; imaging the second edge chamfer surface according to the second detection light beam; and imaging the edge vertex surface according to the third detection light beam.
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