CN114196945A - Method for reducing particles generated in PECVD film deposition process - Google Patents
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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Abstract
The invention discloses a method for reducing particles generated in a PECVD (plasma enhanced chemical vapor deposition) film deposition process, which comprises the following steps of: s1, conveying the wafer into the PECVD chamber through the conveying mechanism and preheating the wafer; s2, introducing side reaction gas in the process gas into the PECVD chamber, and maintaining the pressure of the inner cavity of the PECVD chamber to be stable; s3, starting a radio frequency power supply and keeping for a first preset time until the plasma in the PECVD chamber is in a stable state; s4, introducing main reaction gas in the process gas into the PECVD chamber, starting to deposit the film until the film has a preset thickness, and closing the main reaction gas; and S5, keeping the on state of the radio frequency power supply for a second preset time, and then closing the radio frequency power supply and simultaneously closing the side reaction gas. According to the method for reducing the particles generated in the film deposition process by PECVD, disclosed by the embodiment of the invention, the particles generated in the film deposition process by PECVD are reduced by optimizing the sequence of the process reaction gases entering the PECVD chamber and the radio frequency starting sequence, and the effect of reducing the particles on the surface of the film is very obvious.
Description
Technical Field
The invention relates to the technical field of integrated circuit film deposition, in particular to a method for reducing particles generated in a PECVD film deposition process.
Background
Thin film deposition plays a very important role in integrated circuit manufacturing processes. As the size of integrated circuits continues to decrease, new challenges are presented with respect to uniformity of deposited films and film surface grains (in-film grains).
The film surface particles can directly influence the yield of the whole integrated circuit, wherein when the deposited film is used as a hard mask, the film surface particles can influence the spin coating and exposure of the photoresist and transfer of a photoetching pattern; when a film is deposited as a dielectric film, particles on the surface of the film may affect the insulation of the film, possibly causing a short circuit or breakdown between two wires, and losing the insulation property.
The sources of film surface particles during film deposition are varied and may come from particles carried by the process gases, particles generated by moving parts of the chamber, particles generated during film deposition, and particles generated by peeling off of the deposited film from the chamber. For PECVD, particles brought by process gas can be solved by replacing a gas source and purging nitrogen, particles brought by a moving part of a cavity can be solved by means of optimizing the material in the cavity, optimizing the structure of the moving part and the like, and particles brought by peeling of a deposited film of the cavity can be solved by optimizing the gas inlet structure and the material of a gas homogenizing disc.
However, the particles generated during the deposition of the thin film are very troublesome, and for PECVD, the deposition process is a process in which the rf dissociation reaction gas is deposited on the wafer, the deposition process is a complex reaction process, and is mainly affected by the rf, the process gas, and the chamber environment, and the reason for generating the particles during the deposition process is relatively complex. In the prior art, the generation of particles in the deposition process is avoided as much as possible by accurately controlling the process gas flow, the cavity pressure and the radio frequency power output, so that the process cost is high, the realization is difficult, and the effect of reducing the particles on the surface of the film is not obvious. Therefore, a need exists to solve the above-mentioned problems.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art.
Therefore, the invention provides a method for reducing particles generated in the process of depositing a film by PECVD, which reduces the particles generated in the process of depositing the film by PECVD by optimizing the sequence of the process reaction gases entering a PECVD chamber and the radio frequency starting sequence, and has obvious effect on reducing the generation of the particles on the surface of the film.
The method for reducing the particles generated in the process of PECVD depositing the film comprises the following steps:
s1, conveying the wafer into the PECVD chamber through the conveying mechanism and preheating the wafer;
s2, introducing side reaction gas in the process gas into the PECVD chamber, and maintaining the pressure of the inner cavity of the PECVD chamber to be stable;
s3, starting a radio frequency power supply and keeping for a first preset time until the plasma in the PECVD chamber is in a stable state;
s4, introducing main reaction gas in the process gas into the PECVD chamber, starting to deposit a film until the film has a preset thickness, and closing the main reaction gas;
and S5, keeping the on state of the radio frequency power supply for a second preset time, and then closing the radio frequency power supply and simultaneously closing the side reaction gas.
The method for reducing the particles generated in the process of depositing the thin film by PECVD reduces the particles generated in the process of depositing the thin film by optimizing the sequence of the process reaction gases entering the PECVD chamber and the radio frequency starting sequence, is based on the principle of generating the particles on the surface of the thin film, and has obvious effect of reducing the particles on the surface of the thin film.
According to one embodiment of the invention, the primary reactant gas is SiH4 and the secondary reactant gases are NH3, N2, and Ar.
According to another embodiment of the present invention, the primary reactant gas is SiH4 and the secondary reactant gas is N2O.
According to yet another embodiment of the present invention, the primary reaction gas is TEOS and the secondary reaction gas is O2.
According to another embodiment of the present invention, in the step S1, the preheating temperature is 200 ℃ to 450 ℃; in the step S2, the chamber pressure is maintained at 0.5Torr to 10 Torr.
According to another embodiment of the present invention, the rf power source includes a first rf power source and a second rf power source, the first rf power source has a rf power greater than that of the second rf power source, the first rf power source is turned on for a third predetermined time in step S3, and then the second rf power source is turned on, and the first rf power source and the second rf power source are simultaneously turned off in step S5.
According to still another embodiment of the present invention, in the step S3, the first predetermined time is in a range of 1-10S.
According to another embodiment of the present invention, in the step S5, the rf power of the rf power source maintains its original power or decreases to 20-90% of its original power, and the second predetermined time is in a range of 3-15S.
According to an alternative embodiment of the invention, the method further comprises: and S6, introducing a purging gas into the PECVD chamber to purge the chamber and the wafer.
Further, in step S6, the purge gas is adjusted to a predetermined flow rate, the PECVD chamber is maintained stable, the chamber and the wafer are purged for a fourth predetermined time, and then the purge gas is turned off and the process is finished.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a process flow diagram illustrating a method for reducing particle generation during PECVD deposition of thin films in accordance with an embodiment of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", and the like, indicate orientations and positional relationships based on the orientations and positional relationships shown in the drawings, and are used merely for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the device or element so referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.
It should be noted that, through a large number of experiments, it is found that, in the deposition process, particles on the surface of the thin film mainly come from the moment when the radio frequency is turned on and off, corresponding fluctuations in the radio frequency power and the reflected power (for example, 500W is output to the whole chamber, the reflected power is 50W, and the power actually used for the process is 500W-50W — 450W) are found from the table parameter records. At the end of deposition, the rf power is turned off, i.e., the rf energy to maintain the plasma equilibrium state disappears, and at this time, the process gases that are not completely dissociated in the chamber are easily agglomerated to produce particles. The invention is based on the mechanism of generating the particles on the surface of the film, and the particles generated in the film deposition process of PECVD are reduced by optimizing the sequence of the process reaction gases entering the PECVD chamber and the radio frequency starting sequence in a targeted manner.
A method for reducing particle generation during PECVD deposition of thin films according to embodiments of the invention is described below with reference to fig. 1. It should be noted that the chambers referred to in the embodiments of the present invention are all referred to as PECVD chambers.
The method for reducing the particles generated in the process of PECVD depositing the film comprises the following steps:
s1, conveying the wafer into the PECVD chamber through the conveying mechanism and preheating the wafer;
s2, introducing side reaction gas in the process gas into the PECVD chamber, and maintaining the pressure of the inner cavity of the PECVD chamber to be stable;
s3, starting a radio frequency power supply and keeping for a first preset time until the plasma in the PECVD chamber is in a stable state;
s4, introducing main reaction gas in the process gas into the PECVD chamber, starting to deposit the film until the film has a preset thickness, and closing the main reaction gas;
and S5, keeping the on state of the radio frequency power supply for a second preset time, and then closing the radio frequency power supply and simultaneously closing the side reaction gas.
The sequence of the steps shows that the wafer is conveyed into the PECVD chamber, the secondary reaction gas in the process gas is introduced into the chamber, a certain flow and stable chamber pressure are maintained, then the radio frequency power supply is turned on for a period of time, then the primary reaction gas in the process gas is introduced, the film deposition is started, after the film with the preset thickness is deposited, the primary reaction gas is turned off, and then the radio frequency power supply and the secondary reaction gas are turned off.
It can be seen that before the film is deposited, the secondary reaction gas needs to be introduced for maintaining the chamber pressure stable, i.e. the primary reaction gas for depositing the film is not introduced. After the radio frequency power supply is started, after the plasma in the cavity is maintained stable, the main reaction gas is introduced, when the deposited film reaches the preset thickness, the main reaction gas is firstly closed for a period of time, and then the radio frequency power supply and the auxiliary reaction gas are closed.
Therefore, the method for reducing the particles generated in the process of depositing the thin film by PECVD reduces the particles generated in the process of depositing the thin film by optimizing the sequence of the process reaction gases entering the PECVD chamber and the radio frequency starting sequence, is based on the principle of generating the particles on the surface of the thin film, and has obvious effect of reducing the particles on the surface of the thin film.
According to one embodiment of the present invention, the main reaction gas is SiH4 (silane) and the side reaction gases are NH3, N2, and Ar for depositing a silicon nitride film.
According to another embodiment of the present invention, the main reactant gas is SiH4 (silane) and the side reactant gas is N2O for depositing a silicon oxide film, a silicon oxynitride film.
According to yet another embodiment of the present invention, the main reaction gas is TEOS (tetraethylorthosilicate) and the side reaction gas is O2 for depositing a silicon oxide film.
It should be added that the main reaction gas in the embodiments of the present invention is not limited to the above three, and the secondary reaction gas is not limited to the above three, and those skilled in the art can understand that the main reaction gas and the secondary reaction gas that can be used for depositing the thin film are within the protection scope of the present invention.
According to another embodiment of the present invention, in step S1, the preheating temperature may be 200 ℃ to 450 ℃, and specifically may be 200 ℃, 260 ℃, 300 ℃, 350 ℃, 380 ℃, 400 ℃ and 450 ℃. In step S2, the chamber pressure is maintained at 0.5Torr to 10Torr, specifically 500mtorr, 1000mtorr, 2000mtorr, 3000mtorr, 4000mtorr, 5000mtorr, etc.
According to yet another embodiment of the present invention, the RF power source includes a first RF power source and a second RF power source, the first RF power source having an electromagnetic frequency greater than the electromagnetic frequency of the second RF power source, e.g., the first RF power source is a high frequency power source (13.56MHz) and the second RF power source is a low frequency power source (400 KHz). In step S3, the first rf power source is turned on for a third predetermined time and then the second rf power source is turned on, and in step S5, the first rf power source and the second rf power source are turned off simultaneously.
In an alternative embodiment of the invention, the third predetermined time is in the range of 1s to 10s, typically 1s to 10s, where the stabilization of the plasma can be achieved.
According to still another embodiment of the present invention, the first predetermined time is in the range of 1-10S in step S3. In the first preset time range, the plasma in the PECVD chamber can be kept in a stable state, and particles are effectively prevented from being introduced by the unstable plasma when a radio frequency power supply is started
According to another embodiment of the present invention, in step S5, the rf power of the rf power source is maintained at its original power or reduced to 20-90% of its original power, and the second predetermined time is within a range of 3-15S, so that a stable plasma state is maintained in the chamber after the main reaction gas is turned off, thereby effectively preventing unstable plasma from introducing particles when the rf power source is turned off.
According to an alternative embodiment of the invention, the method further comprises: and S6, introducing a purge gas into the PECVD chamber to purge the chamber and the wafer.
Further, in step S6, the purge gas is adjusted to a predetermined flow rate, the PECVD chamber is maintained stable, the chamber and the wafer are purged for a fourth predetermined time, and then the purge gas is turned off and the process is terminated.
The following description is given by taking the deposition of a silane (SiNx) film in a PECVD chamber as an example, and specifically includes the following steps:
step S11, conveying the wafer into the PECVD chamber through the conveying mechanism, and preheating;
step S12, introducing process gas (i.e. side reaction gas) except silane and stabilizing the chamber pressure, such as introducing 40sccm ammonia gas (NH3) +1000sccm nitrogen gas (N2) +500sccm argon (Ar), wherein the chamber pressure in the chamber is maintained at 3.0 Torr;
step S13, firstly, starting a high-frequency power supply (13.56MHz), keeping the radio frequency power of the high-frequency power supply at 150W for 1S, then starting a low-frequency power supply (400KHz), keeping the radio frequency power of the low-frequency power supply at 50W for 3S;
step S14, introducing silane (SiH4) of 48sccm, closing the silane after depositing a film with a certain time reaching a preset thickness, keeping the radio frequency power of a high-frequency power supply at 150W, keeping the radio frequency power of a low-frequency power supply at 50W, closing the high-frequency power supply and the low-frequency power supply after maintaining the high-frequency power supply and the low-frequency power supply for 5S, and closing process gases (ammonia gas and argon gas) except the silane;
step S15, adjusting the flow of the nitrogen to 5000sccm, adjusting the cavity pressure of the cavity to 4.0T, purging the cavity and the wafer, keeping the purging time for 15S, then closing the nitrogen, exhausting the cavity, keeping the exhausting time for 10S, ending the process, and taking the wafer out of the cavity;
in step S12, the side reaction gas may be one of ammonia (NH3), nitrogen (N2) and argon (Ar), or ammonia (NH3), nitrogen (N2) and argon (Ar);
in step S13, after the high frequency power supply (13.56MHz) and the low frequency power supply (400KMz) are both turned on, the time is maintained for 1-10S, and then silane (SiH4) gas is introduced;
in step S14, a film with a predetermined thickness is deposited, the silane (SiH4) gas is turned off, and then the high frequency power supply and the low frequency power supply maintain the original power or reduce the power to 20 to 90% of the original power, and the maintaining time is 3 to 15 seconds.
Therefore, by controlling the turn-on and turn-off time of the radio frequency power supply and the sequence of introducing silane into the cavity, the particle problem caused by unstable radio frequency at the turn-on moment or the turn-off moment can be reduced.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (10)
1. A method for reducing particles generated in a PECVD film deposition process is characterized by comprising the following steps:
s1, conveying the wafer into the PECVD chamber through the conveying mechanism and preheating the wafer;
s2, introducing side reaction gas in the process gas into the PECVD chamber, and maintaining the pressure of the inner cavity of the PECVD chamber to be stable;
s3, starting a radio frequency power supply and keeping for a first preset time until the plasma in the PECVD chamber is in a stable state;
s4, introducing main reaction gas in the process gas into the PECVD chamber, starting to deposit a film until the film has a preset thickness, and closing the main reaction gas;
and S5, keeping the on state of the radio frequency power supply for a second preset time, and then closing the radio frequency power supply and simultaneously closing the side reaction gas.
2. The method of claim 1, wherein the main reactant gas is SiH4 and the side reactant gases are NH3, N2 and Ar.
3. The method of claim 1, wherein the primary reactant gas is SiH4 and the secondary reactant gas is N2O.
4. The method of claim 1, wherein the main reactant gas is TEOS and the side reactant gas is O2.
5. The method of claim 1, wherein the preheating temperature is 200 ℃ to 450 ℃ in the step S1; in the step S2, the chamber pressure is maintained at 0.5Torr to 10 Torr.
6. The method of claim 1, wherein the RF power source comprises a first RF power source and a second RF power source, the RF power of the first RF power source is greater than the RF power of the second RF power source, the first RF power source is turned on for a third predetermined time before the second RF power source is turned on in step S3, and the first RF power source and the second RF power source are turned off simultaneously in step S5.
7. The method of claim 1, wherein the first predetermined time is in the range of 1-10S in the step S3.
8. The method of claim 1, wherein in step S5, the rf power of the rf power source is maintained at or reduced to 20-90% of its original power, and the second predetermined time is within a range of 3-15S.
9. The method of any of claims 1-8, further comprising: and S6, introducing a purging gas into the PECVD chamber to purge the chamber and the wafer.
10. The method of claim 9, wherein in step S6, the purge gas is adjusted to a predetermined flow rate, the PECVD chamber is maintained steady, the chamber and the wafer are purged for a fourth predetermined time, and then the purge gas is turned off and the process is terminated.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115198248A (en) * | 2022-07-14 | 2022-10-18 | 拓荆科技(北京)有限公司 | Method for improving surface roughness of SiO thin film and application |
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