CN114189213A - Ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining and test fixture thereof - Google Patents
Ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining and test fixture thereof Download PDFInfo
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Abstract
The invention discloses an ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining and a test fixture thereof. The waveguide-probe transition structure of the input end and the output end provides a waveguide interface for connecting the frequency multiplier and the test fixture; the micro coaxial low-pass filter is used for limiting the flow direction of a frequency multiplication signal, and an additional controllable transmission zero point can be realized by adopting a T-shaped SIR branch loading structure, so that the stop band performance is improved; the diode chip is used for realizing frequency doubling, is pasted on a table top formed by upward extension of the coaxial line inner conductor in an inverted manner, is in an I shape and a cross shape, and is directly connected with the outer conductor at the end part, so that the heat dissipation performance of the device is improved; the impedance matching network is used for realizing impedance matching between the front circuit and the output port.
Description
Technical Field
The invention belongs to the technical field of wireless communication, and particularly relates to an ultra wide band surface-mounted frequency multiplier based on three-dimensional metal micromachining and a test fixture thereof.
Background
With the development of wireless communication technology, millimeter wave/terahertz frequency bands are receiving more and more attention from people. Due to the fact that the working frequency of the millimeter wave/terahertz frequency band is high and the bandwidth range is large, the corresponding communication device has the advantages of being small in size and large in information capacity, and the miniaturization, the light weight and the high efficiency of a communication system are facilitated.
Although the millimeter wave/terahertz technology has been widely applied to a plurality of fields such as imaging, high-speed communication, astronomical detection and meteorological satellite, many limitations and challenges still face in practical application, one of which is the processing technology. Clearly, the devices and systems in these frequency bands are very small and are not well suited to be fabricated using conventional printed circuit board technology (pcb) primarily for fabricating planar transmission lines (large transmission losses, severe dispersion effects, limited power capability) and Computer Numerical Controlled (CNC) machining primarily for fabricating metal waveguides (large size, high cost). In order to process millimeter wave/terahertz devices and systems, various micromachining processes have been developed in recent years at home and abroad, including CNC machining technology, deep silicon etching (DRIE) technology, SU8 photoresist technology, 3D printing technology, three-dimensional metal micromachining technology (often called micro-coaxial technology), and the like. The CNC machining technology is a mature technology and is used for machining millimeter wave/terahertz devices at first, but along with the reduction of the size of the devices, the requirement on machining precision is higher and higher, the time and the cost of CNC machining are obviously improved, large-scale manufacturing is not facilitated, the devices machined through CNC machining are manufactured by reducing materials, the devices must be split into a plurality of modules to be machined respectively, the modules are then assembled together, the precision requirement on the assembly is also high, and meanwhile certain assembly errors cannot be introduced inevitably. The DRIE technology and the SU8 photoresist technology also need to be assembled, the mechanical strength of silicon and SU8 photoresist is poor, the silicon and SU8 photoresist are easy to break during the assembling and application processes, the SU8 photoresist has poor thermal conductivity, and the temperature requirement on the application environment is high, so the DRIE technology and the SU8 photoresist technology have many limitations in practical application. The 3D printing technology is integrally formed, so that the problem of assembly errors does not exist, but for the millimeter wave/terahertz frequency band, the precision of the 3D printing technology is low (about 50-100 μm), and a supporting structure is needed in the printing process, so that the 3D printing technology has many limitations in practical application. The three-dimensional metal micromachining technology is a new technology improved on the basis of a UV-LIGA photoetching technology, integrates various technologies such as photoetching, electroplating, polishing and the like, uses pure copper as a raw material, can process an air-filled rectangular micro-coaxial wire and a rectangular waveguide structure, is integrally formed as a 3D printing technology, has high processing precision (about 5 mu m), has better mechanical property and heat conduction property because the raw material is copper, can realize the integration of a communication system through vertical stacking or interlayer interconnection technology, and has good application prospect.
Another challenge in the field of millimeter wave/terahertz technology is the implementation of high power terahertz sources. Frequency signals below the terahertz frequency band can be generated by conventional microwave devices (such as amplifiers, oscillators, and the like), and frequency signals above the terahertz frequency band can be generated by optoelectronic devices. Both microwave devices and optoelectronic devices have difficulty in directly and efficiently generating signals in the terahertz frequency band therebetween. Therefore, how to realize a high-power terahertz source has been the subject of intensive research. At present, there are many methods for generating terahertz sources, such as optical mixing, infrared pumped gas laser, quantum cascade laser, schottky or heterojunction barrier variable reactance diode, and the like. Frequency multipliers made by using schottky diodes have the advantages of relatively low cost, small volume, capability of working at room temperature and the like, so the frequency multipliers are widely applied.
The traditional frequency multiplier is designed in the way that a diode is attached to a quartz substrate, and the quartz substrate is then installed in a waveguide cavity to realize the function of the frequency multiplier, so that assembly errors of the two parts can be brought, the performance is deteriorated, and the errors of the second part are usually the main sources of the errors. After the improved method of integrating the diode on the dielectric substrate is adopted, the assembly error of the first part can be eliminated, but the mechanical strength of the dielectric substrate is weaker, and the dielectric substrate is inserted into the waveguide cavity during assembly, so that the shape is easy to warp, the performance of the diode and the planar auxiliary circuit on the dielectric substrate can be affected, and the performance is deteriorated.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a design method of an ultra wide band surface-mounted frequency multiplier based on three-dimensional metal micromachining, and aims to design a broadband frequency multiplier structure which is excellent in performance, small in size, low in machining cost and capable of being applied in a large scale.
In order to achieve the purpose, the invention adopts the technical scheme that: an ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining comprises an outer conductor, and a waveguide probe transition structure, a low-pass filter, a diode chip, an impedance matching network and a probe waveguide transition structure which are sequentially connected with the inner part of the outer conductor from the input end to the output end of a radio-frequency signal, wherein the waveguide probe transition structure and the probe waveguide transition structure provide a waveguide interface for connecting the frequency multiplier and a test fixture; the low-pass filter is used for limiting the flow direction of the frequency multiplication signal and inhibiting the flow direction of the frequency multiplication signal to the input end so that the frequency multiplication signal can only flow out of the output end, and the low-pass filter adopts a structure of loading T-shaped SIR branches; the diode chip is used for realizing frequency multiplication of signals, the coaxial line inner conductor arranged at the diode chip extends upwards to form two table tops, the diode chip is pasted on the table tops in an inverted buckling mode, the diode chip is in an I shape and a cross shape, and the diode chip is connected with the outer conductor; the impedance matching network is used for realizing impedance matching between the front circuit and the output port.
One side of the waveguide probe transition structure and the probe waveguide transition structure is a coaxial line with impedance of 50 omega, and the other side is a standard waveguide; the waveguide probe transition structure and the probe waveguide transition structure are transition structures, the transition structures comprise a back cavity and a protruding rectangular probe, the back cavity provides a short-circuit surface for the waveguide structure, the rectangular probe is used for realizing impedance matching and mode matching between the waveguide and the coaxial line, the electromagnetic energy transmission mode in the coaxial line is a TEM mode, and the waveguide is a TE10 mode.
The low-pass filter has five stages, the first-stage resonator, the third-stage resonator and the fifth-stage resonator are all in the form of high-impedance transmission lines, the second-stage resonator and the fourth-stage resonator are in the form of loading branches, are equivalent to low-impedance transmission lines, can generate three out-of-band rejection zeros which are respectively near 110GHz, 170GHz and 340GHz, and two zeros in a frequency band of 100-plus-200 GHz are used for improving the rejection performance of a stop band.
The total length of the low-pass filter is W71900 μm, the width of the inner conductor at both ends of the low-pass filter is L9178 μm and L10150 μm, the width of the inner conductor of the second order resonator stub is L1150 μm, the width of the branch inner conductor of the fourth order resonator is L12300 μm, the length of the inner conductor of the second order resonator stub is W16685 μm, the length of the branch inner conductor of the fourth order resonator is W17+W18，W17＝265μm，W18＝290μm。
The diode chip is provided with four pairs of diodes which are reversely connected in parallel to realize a balance structure.
The inner conductor arranged at the diode chip extends upwards to form two table-boards, and the diode chip is reversely buckled and stuck on the table-boards.
The impedance matching network is realized by connecting a low impedance line in series between the diode chip and the probe waveguide transition structure, and the low impedance line is equivalent to a capacitor; the specific dimensions of the low impedance line are: the total length of the low resistance line is W26339 μm, low impedance line width L13＝300μm。
The medium support bars are arranged at intervals, the distance between two adjacent medium support bars is 700 mu m, and the thickness is H220 μm, total length L4+2×L5，L4＝440μm，L530 μm with a width W at both ends1150 μm with a width W in the middle2＝100μm。
The outer conductor is provided with a release hole for assisting in washing glue, and the length, the width and the height of the release hole are respectively L8＝250μm，W10＝200μm，H3＝200μm。
The test fixture for the ultra-wideband surface-mounted frequency multiplier comprises a back cavity piece, a waveguide connecting piece and a flange, wherein the back cavity piece is used for providing a back cavity structure required by an input and output transition part of the frequency multiplier, an input back cavity and an output back cavity are arranged on the back cavity piece, the waveguide connecting piece is connected with the frequency multiplier and the flange, the flange is integrally rectangular, the flange is divided into four parts perpendicular to the self connecting surface, the divided surfaces are positioned on the middle surface, and the distance parallel to the length direction of the frequency multiplier is adjustable.
Compared with the prior art, the invention has at least the following beneficial effects: the invention can effectively solve the defects existing in the traditional design idea; the related auxiliary circuit is realized by the micro coaxial line formed by copper, so that the ultra-wideband surface-mounted frequency multiplier has good mechanical stability and smaller size, meanwhile, the waveguide-probe transition structure of the input end and the output end also avoids the error of the second part, although the error of the first part still exists, the influence on the performance of the frequency multiplier is small because the error is not a main error source, and the ultra-wideband surface-mounted frequency multiplier has signal output in the range of 100 plus 200GHz, so that ultra-wideband output is realized.
Furthermore, two T-shaped SIR branch structures are loaded on the five-order low-pass filter, and compared with a traditional step impedance low-pass filter, the five-order low-pass filter can realize an additional controllable transmission zero while the design principle is kept unchanged, can restrain a specific frequency band range, and further improves the restraining effect of a stop band.
Furthermore, the diode chip is mounted on a reserved bonding pad formed by extended coaxial inner conductors in an inverted buckling mode, and the chip is directly contacted with the outer conductor by designing the shape of the diode chip into an I shape and a cross shape, so that a heat dissipation channel is increased, and the thermal resistance can be effectively reduced; meanwhile, the diode pairs connected in parallel in the reverse direction can realize a balanced structure, so that all even harmonic components are offset, only odd harmonic components are left, and the utilization efficiency of signal power is improved.
In summary, compared with the traditional design idea of realizing all auxiliary circuits on the waveguide and the planar circuit, the frequency multiplier designed by the invention has the advantages of less assembly error, better mechanical stability, smaller size and easy disassembly and replacement. In addition, the frequency multiplier designed by the invention can be used for large-scale practical application due to the advantage that the three-dimensional metal micromachining process can be produced in batches.
Drawings
In order to more clearly illustrate the embodiments or prior art solutions of the present invention, the drawings used in the embodiments or prior art solutions will be briefly described below. It is to be noted that the drawings in the following description are only some embodiments of the invention, and that other drawings may be derived from these drawings by a person skilled in the art without inventive effort.
The invention designs a broadband frequency multiplier based on a three-dimensional metal micromachining process and a Schottky diode, and can provide certain reference significance for future frequency multiplier development in the millimeter wave/terahertz field.
Fig. 1 is a schematic diagram of a rectangular coaxial line based on a three-dimensional metal micromachining process, provided in an embodiment of the present invention, (a) is a schematic diagram of a cross section of the rectangular coaxial line, and (b) is a schematic diagram of a dielectric strip supporting a suspended inner conductor;
fig. 2 is a schematic diagram of an input/output transition structure of an ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining according to an embodiment of the present invention, (a) is a schematic diagram of an input-end waveguide probe transition structure, and (b) is a schematic diagram of an output-end probe waveguide transition structure;
fig. 3 is a schematic diagram of a low-pass filter based on a three-dimensional metal micromachining process according to an embodiment of the present invention, (a) is an overall schematic diagram of the low-pass filter, and (b) and (c) are schematic diagrams of an inner conductor of the low-pass filter;
fig. 4 is a schematic diagram of a diode chip portion of an ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining according to an embodiment of the present invention, (a) is an overall schematic diagram of an "i" shaped diode chip portion, (b) is an overall schematic diagram of a "cross" shaped diode chip portion, and (c) is a schematic diagram of an inner conductor of the "cross" shaped diode chip portion;
fig. 5 is a schematic diagram of an impedance matching network at an output end of an ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining according to an embodiment of the present invention, (a) is an overall schematic diagram of the impedance matching network, and (b) is a schematic diagram of an inner conductor of the impedance matching network;
fig. 6 is an overall schematic diagram of an ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining according to an embodiment of the present invention (a diode chip is in an "i" shape);
fig. 7 is an overall schematic diagram of an ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining according to an embodiment of the present invention (a diode chip is in a cross shape);
fig. 8 is an overall schematic view of a test auxiliary fixture of an ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining according to an embodiment of the present invention;
fig. 9 is a cross-sectional view of a test auxiliary fixture of an ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining according to an embodiment of the present invention;
fig. 10 is a test result of the output power of an ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining according to an embodiment of the present invention.
Detailed Description
In order to make the objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. It should be noted that the described embodiments are only some embodiments of the invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any inventive step, are intended to be within the scope of the claims.
In the description of the embodiments of the present invention, it should be understood that the terms "longitudinal direction" and "vertical direction" and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of describing the embodiments of the present invention and simplifying the description, and are not to be construed as indicating specific orientations of elements or devices.
The embodiment of the invention designs an ultra wide band surface-mounted frequency multiplier based on three-dimensional metal micromachining, which comprises a waveguide probe transition structure 1, a low-pass filter 2, a diode chip 3, an impedance matching network 4 and a probe waveguide transition structure 5, wherein the waveguide probe transition structure 1 and the probe waveguide transition structure 5 are respectively positioned at the input end and the output end of a radio-frequency signal and are used for realizing impedance matching and mode matching between a waveguide and a coaxial line and playing a role in transition of electromagnetic energy between the waveguide and the coaxial line; the low-pass filter is used for inhibiting the flow of frequency multiplication signals to the input end and enabling the frequency multiplication signals to only flow out of the output end, and a step impedance low-pass filter structure with a T-shaped SIR branch loading structure is adopted; the diode chip is used for realizing the frequency doubling function of signals, and a balanced structure is realized by using the reverse parallel diode pair during design, so that the use efficiency of signal power is improved; the impedance matching network is used for realizing impedance matching between the front circuit and the output port and is realized by adopting a section of low-impedance line connected in series.
Signals of the invention are sequentially input from the waveguide probe transition structure 1, sequentially pass through the low-pass filter 2, the diode chip 3 and the impedance matching network 4, and are output from the probe waveguide transition structure 5.
In the description of the embodiments of the present invention, given that the structural dimensions are preferred parameters, the dimensional parameters of the various components can be further modified to obtain the actually desired performance with reference to the embodiments of the present invention.
Referring to fig. 1, fig. 1 is a schematic diagram of a rectangular coaxial line based on a three-dimensional metal micromachining process according to an embodiment of the present invention, where (a) is a schematic diagram of a cross section of the rectangular coaxial line, and (b) is a schematic diagram of a dielectric strip supporting a suspended inner conductor.
The rectangular coaxial transmission line based on the three-dimensional metal micromachining process has a topological structure with 5 layers, as shown in fig. 1(a), the first layer and the fifth layer are the upper wall and the lower wall of a rectangular coaxial outer conductor, the second layer, the third layer and the fourth layer form the side wall of the rectangular coaxial outer conductor, the rectangular coaxial inner conductor is positioned at the third layer, and the thickness of each layer is H 1100 μm, width of the outer conductor is L1400 μm, width of the inner conductor is L2178 μm (the width of the inner conductor may be different depending on the impedance requirement, the impedance used in the present invention is 50 Ω), and the width of the outer conductor after the addition of the sidewall thickness is L3600 μm. In addition, because the inner conductor is suspended in the outer conductor, the inner conductor and the outer conductor are relatively fixedly connected by adding periodic medium support bars, the distance between the two support bars is generally 700 μm, and the thickness of the support bars is H220 μm. FIG. 1(b) is a top view of the supporting bar, which corresponds to the specific dimension L4＝440μm，L5＝30μm，W1＝150μm，W2＝100μm。
Fig. 2 is a schematic diagram of an input/output transition structure of an ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining according to an embodiment of the present invention, where (a) is a schematic diagram of an input-end waveguide probe transition structure, and (b) is a schematic diagram of an output-end probe waveguide transition structure.
The invention adopts a rectangular micro-coaxial transmission line to realize the related circuit of the frequency multiplier, because the standard waveguide corresponding to the input frequency band is WR-19 and the size is a1＝4.775mm，b12.388mm, the output frequency band corresponds to a standard waveguide WR-6.5 with the size a2＝1.651mm，b2The waveguide-coaxial line transition structure needs to be designed for connecting with a clamp of a waveguide interface during testing, wherein the waveguide-coaxial line transition structure is 0.826 mm. The waveguide probe transition structure 1 and the probe waveguide transition structure 5 are transition structures, each transition structure comprises a back cavity and an extended rectangular probe, the back cavity is used for providing a proper short circuit surface for the waveguide so as to reduce the reflection of energy, the back cavity and the fixture are processed and manufactured together through a CNC (computer numerical control) process, and the rectangular probes are used for realizing impedance matching and mode matching between the waveguide and the coaxial line; referring to fig. 2(a) and 2(b), the dimensions of the input-side probe structure are as follows: the distance between the probe and the coaxial line is W3502 μm, the width of the probe is W4578 μm, length of probe L6976 μm, the size of the output probe structure is as follows: the distance between the probe and the coaxial line is W5106 μm and the width of the probe W6249 μm, length of probe L7＝464μm。
Fig. 3 is a schematic diagram of a low-pass filter based on a three-dimensional metal micromachining process according to an embodiment of the present invention, where fig. 3(a) is an overall schematic diagram of the low-pass filter, and fig. 3(b) and 3(c) are schematic diagrams of an inner conductor of the low-pass filter.
The design idea of the low-pass filter 2 is improved on the basis of the traditional step impedance low-pass filter, a low impedance line part in the traditional design idea is equivalently replaced by a T-shaped SIR branch loading structure, the design principle is guaranteed to be unchanged, meanwhile, the wide stop band suppression and the high gradient degree can be achieved, and the position of an out-of-band suppression zero point can be freely adjusted according to requirements. The low-pass filter designed by the application has five-order resonators in total, two T-shaped SIR branches are loaded, the low-pass filter 2 comprises the five-order resonators, a first-order resonator A, a third-order resonator C and a fifth-order resonator E are all in the form of high-impedance transmission lines, a second-order resonator B and a fourth-order resonator D are in the form of loading branches, the section of the loading branch of the second-order resonator B is unchanged along the length direction, the section of the loading branch of the fourth-order resonator D is changed in a two-stage ladder manner along the length direction, and the low-pass filter and the fourth-order resonator D are combinedThe structure can generate three out-of-band rejection zeros near 110GHz, 170GHz and 340GHz respectively, wherein two zeros in the frequency band of 100-200GHz can be used to improve the rejection performance of the stop band. In addition, the rectangular coaxial line is filled with air, but the air-filled part is photoresist during processing, in order to facilitate the cleaning of the photoresist after the processing is completed, release holes are required to be opened periodically on the outer conductor, and the positions of the release holes are arranged as far as possible according to the principle of not influencing signal transmission. The specific dimensions of the low-pass filter and the release hole after optimization are as follows: the total length of the low-pass filter is W71900 μm, the length of two branches being W8＝460μm，W9The length, width and height of the release hole were each L330 μm8＝250μm，W10＝200μm，H 3200 μm, the relative position of the two branches corresponds to a dimension W11＝420μm，W1250 μm, and the width of the inner conductor at both ends is L9＝178μm，L10150 μm, the width of the conductor in the two branches is L11＝50μm，L12300 μm, the length of the conductor in each part is W13＝668μm，W14＝1152μm，W15＝80μm，W16＝685μm，W17＝265μm，W18＝290μm。
Fig. 4 is a schematic diagram of a diode chip portion of an ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining according to an embodiment of the present invention, where fig. 4(a) is an overall schematic diagram of an "i" shaped diode chip portion, fig. 4(b) is an overall schematic diagram of a "cross" shaped diode chip portion, and fig. 4(c) is a schematic diagram of an inner conductor of the "cross" shaped diode chip portion.
The diode chip is processed independently, so a mounting position needs to be reserved, the inner conductor can extend upwards to form two table-boards, and the diode chip can be reversely attached to the two table-boards. In addition, the diode chip is designed to be I-shaped or cross-shaped, and can be directly contacted with the outer conductor after being mounted, and the part of the diode chip 3 extending out of the body is connected with the outer conductor; the heat dissipation channel of the diode chip is added, and the frequency multiplication can be improvedThe heat dissipation performance of the device. The present invention designs four pairs of diode chips connected in parallel in reverse to realize the frequency doubling function, as shown in fig. 4. The total length of the part is W19797 μm, common sidewall thickness W2062 μm, the length of the inner conductor is W21＝135μm，W22＝100μm，W 23200 μm, the height of the mesa is H4＝300μm。
Fig. 5 is a schematic diagram of an output end impedance matching network of an ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining according to an embodiment of the present invention, where fig. 5(a) is an overall schematic diagram of the impedance matching network, and fig. 5(b) is a schematic diagram of an inner conductor of the impedance matching network.
In order to counteract the influence of the impedance imaginary part of the output port, the invention realizes the impedance matching function by adding a section of low impedance line (equivalent to a capacitor) which is connected in series, thereby improving the reflection characteristic of the output end, improving the output power of the frequency multiplier and basically not influencing the characteristic of the input part of the frequency multiplier. The specific dimensions of the impedance matching section are as follows: total length of W24The left end transmission line connected to the low impedance line has a length of W, 802 μm25191 μm, low impedance line length W26339 μm, and the right transmission line connected to the low impedance line has a length of W27273 μm, width of low impedance line L13＝300μm。
Fig. 6 and fig. 7 are overall schematic diagrams of an ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining according to an embodiment of the present invention (the shapes of the diode chips are "i" and "cross" respectively); fig. 8 and fig. 9 are an overall schematic view and a cross-sectional view of a test auxiliary fixture for an ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining according to an embodiment of the present invention; fig. 10 is a test result of the output power of an ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining according to an embodiment of the present invention.
The overall structure of the frequency multiplier formed by combining the parts is shown in fig. 6 and 7, in order to test the performance of the frequency multiplier, the invention also designs a set of jig for auxiliary test, as shown in fig. 8 and 9, the first part of the jig shown in the figure is a back cavity sheet 101, the back cavity sheet 101 is used for providing a back cavity structure required by the input and output transition parts of the frequency multiplier 102, namely an input back cavity 101a and an output back cavity 101b, the second part is a waveguide connecting sheet 103, the waveguide connecting sheet 103 connects the frequency multiplier 102 with a third part flange 104, it is noted that the flange structure 104 designed by the invention can be compatible with the frequency multipliers with the same frequency band and different lengths, the flange 104 is overall cuboid, and is divided into four blocks perpendicular to the connecting surface of the flange, the first block 104a, the second block 104b, the third block 104c and the fourth block 104d, the divided surfaces of which are located at the middle position, the distance parallel to the length direction of the frequency multiplier is adjustable, namely, the distance d between the first block 104a, the second block 104b and the third block 104c, the fourth block 104d is adjusted, so that the test fixture can be repeatedly used. Fig. 10 is a test result of the frequency multiplier provided by the present invention, which can obtain that the output power is more than 1.3mW in the whole required output frequency band (110-.
In the above description of the design method of the ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining provided by the invention, for those skilled in the art, according to the idea of the embodiment of the invention, the specific implementation and the application range may be changed. In summary, this summary should not be construed to limit the present invention.
Claims (9)
1. The ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining is characterized by comprising a waveguide probe transition structure (1), a low-pass filter (2), a diode chip (3), an impedance matching network (4) and a probe waveguide transition structure (5) which are sequentially connected from an input end to an output end, wherein the waveguide probe transition structure (1) and the probe waveguide transition structure (5) provide waveguide interfaces for connecting the frequency multiplier and a test fixture; the low-pass filter (2) is used for limiting the flow direction of frequency doubling signals, inhibiting the flow direction of the frequency doubling signals to an input end, and enabling the frequency doubling signals to only flow out of the output end, and the low-pass filter adopts a structure of loading T-shaped SIR branches; the diode chip (3) is used for realizing frequency multiplication of signals, the coaxial line inner conductor arranged at the diode chip (3) extends upwards to form two table tops, the diode chip is pasted on the table tops in an inverted buckling mode, the diode chip is in an I shape and a cross shape, and the diode chip is connected with the outer conductor; the impedance matching network (4) is used for realizing impedance matching between the front circuit and the output port.
2. The ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining according to claim 1, characterized in that one side of the waveguide-probe transition structure (1) and the probe-waveguide transition structure (5) is a coaxial line with 50 Ω impedance, and the other side is a standard waveguide; the waveguide probe transition structure (1) and the probe waveguide transition structure (5) are transition structures, each transition structure comprises a back cavity and an extended rectangular probe, the back cavity provides a short-circuit surface for the waveguide structure, the rectangular probes are used for realizing impedance matching and mode matching between the waveguide and the coaxial line, the electromagnetic energy transmission mode in the coaxial line is a TEM mode, and the waveguide is provided with a TE10 mode.
3. The ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining as claimed in claim 1, wherein the low-pass filter (2) has five orders, the first order resonator, the third order resonator and the fifth order resonator are all in the form of high-impedance transmission lines, the second order resonator and the fourth order resonator are in the form of loading stubs, which are equivalent to low-impedance transmission lines, and can generate three out-of-band rejection zeros respectively near 110GHz, 170GHz and 340GHz, wherein two zeros in the frequency band of 100-200GHz are used to improve the stop-band rejection performance.
4. The three-dimensional metal micromachining based ultra-wideband surface-mounted frequency multiplier of claim 3, characterized in that the total length of the low-pass filter (2) is W71900 μm, the width of the inner conductor at both ends of the low-pass filter (2) is L9178 μm and L10150 μm, the width of the inner conductor of the second order resonator stub is L1150 μm, the width of the branch inner conductor of the fourth order resonator is L12300 μm, the length of the inner conductor of the second order resonator stub is W16685 μm, the length of the branch inner conductor of the fourth order resonator is W17+W18，W17＝265μm，W18＝290μm。
5. The ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining according to claim 1, characterized in that the diode chip (3) is provided with four pairs of anti-parallel diodes to realize a balanced structure.
6. The ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining according to claim 1, characterized in that the impedance matching network (4) is implemented in the form of a low impedance line connected in series between the diode chip (3) and the probe waveguide transition structure (5), the low impedance line being equivalent to a capacitor; the specific dimensions of the low impedance line are: the total length of the low resistance line is W26339 μm, low impedance line width L13＝300μm。
7. The ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining of claim 1, characterized in that the dielectric support bars are arranged at intervals, the distance between two adjacent dielectric support bars is 700 μm, and the thickness is H220 μm, total length L4+2×L5，L4＝440μm，L530 μm with a width W at both ends1150 μm with a width W in the middle2＝100μm。
8. The ultra-wideband surface-mounted frequency multiplier based on three-dimensional metal micromachining according to claim 1, characterized in that the outer conductor is provided with a release hole (6), the release hole (6) is used for assisting glue washing, and the length, width and height of the release hole (6) are respectively L8＝250μm，W10＝200μm，H3＝200μm。
9. The test fixture for the ultra-wideband surface-mounted frequency multiplier of any one of claims 1-8, comprising a back cavity plate (101), a waveguide connecting plate (103) and a flange (104), wherein the back cavity plate (101) is used for providing a back cavity structure required by an input/output transition part of the frequency multiplier (102), the back cavity plate (101) is provided with an input back cavity (101a) and an output back cavity (101b), the waveguide connecting plate (103) is connected with the frequency multiplier (102) and the flange (104), the flange (104) is rectangular in overall shape, the connecting surface perpendicular to the flange is divided into four pieces, the dividing surface is located at the middle position, and the distance parallel to the length direction of the frequency multiplier is adjustable.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114824712A (en) * | 2022-05-23 | 2022-07-29 | 赛莱克斯微系统科技（北京）有限公司 | Impedance matching structure of micro-coaxial transmission line |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114824712A (en) * | 2022-05-23 | 2022-07-29 | 赛莱克斯微系统科技（北京）有限公司 | Impedance matching structure of micro-coaxial transmission line |
| CN114824712B (en) * | 2022-05-23 | 2024-02-23 | 赛莱克斯微系统科技（北京）有限公司 | Impedance matching structure of micro coaxial transmission line |
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