CN114185215B

CN114185215B - Array substrate, display panel and display device

Info

Publication number: CN114185215B
Application number: CN202210143765.5A
Authority: CN
Inventors: 先建波; 马永达; 程鸿飞; 乔勇; 吴新银; 龙春平
Original assignee: Chengdu CEC Panda Display Technology Co Ltd
Current assignee: Chengdu BOE Display Technology Co Ltd
Priority date: 2022-02-17
Filing date: 2022-02-17
Publication date: 2022-04-12
Anticipated expiration: 2042-02-17
Also published as: CN114185215A

Abstract

An array substrate, a display panel and a display device are provided. The array substrate comprises a plurality of pixel units, each pixel unit comprises a first transistor, a second transistor, a first pixel electrode and a second pixel electrode, the drain electrode of the first transistor is connected with the first pixel electrode, the drain electrode of the second transistor is connected with the second pixel electrode, each pixel unit further comprises a third transistor, the source electrode of the third transistor is connected with a first electrode block, the drain electrode of the first transistor is connected with the first electrode block, the drain electrode of the third transistor is connected with a second electrode block, and the second electrode block is overlapped with a first storage line; the ratio of the area a1 of the first pixel electrode to the area a2 of the portion where the second electrode block overlaps the first storage line ranges from 15 to 40; and/or the area of the portion of the first electrode block overlapping the first storage line is E, and the ratio of A2 to E ranges from 0.18 to 0.54. Therefore, the array substrate can improve the visual angle and the display quality.

Description

Array substrate, display panel and display device

Technical Field

Embodiments of the present disclosure relate to an array substrate, a display panel, and a display device.

Background

In the field of Display technology, Liquid Crystal Displays (LCDs) have the advantages of being light, thin, low in power consumption, high in brightness, and high in image quality, and especially, Display devices with large size, high resolution, and high image quality are dominant.

In general, a thin film transistor liquid crystal display includes an array substrate, a counter substrate, and a liquid crystal layer interposed between the array substrate and the counter substrate. The tft-lcd can change the orientation of liquid crystal molecules in the liquid crystal layer by using a change in the intensity of an electric field in the liquid crystal layer between the array substrate and the opposite substrate, thereby controlling the intensity of light transmission to display an image.

The array substrate can comprise elements such as grid lines, data lines, driving transistors, pixel electrodes, common electrodes and the like; the grid line is connected with the grid electrode of the driving transistor so as to control the conduction and the closing of the driving transistor; the data line is connected with the source electrode of the driving transistor, the pixel electrode is connected with the drain electrode of the driving transistor, and when the driving transistor is driven by the grid electrode to be conducted, the data line can apply driving voltage to the pixel electrode through the driving transistor; the common electrode line is connected to the common electrode and configured to apply a common voltage to the common electrode, and the pixel electrode and the common electrode may form a driving electric field to change an orientation of liquid crystal molecules in the liquid crystal layer.

Disclosure of Invention

The embodiment of the disclosure provides an array substrate, a display panel and a display device. The array substrate comprises a first substrate, a plurality of pixel units, a grid line, a data line and a first storage line; a plurality of pixel units are positioned on the first substrate base plate; the grid line is positioned on the first substrate and extends along a first direction; the data line is positioned on the first substrate base plate and extends along a second direction, and the second direction is intersected with the first direction; the first storage line is located on the first substrate base plate and extends along a first direction. Each pixel unit comprises a first transistor, a second transistor, a first pixel electrode and a second pixel electrode, a grid line is arranged between the first pixel electrode and the second pixel electrode, and a data line is arranged on one side of the first pixel electrode and one side of the second pixel electrode; the grid electrode of the first transistor is connected with the grid line, the source electrode of the first transistor is connected with the data line, the drain electrode of the first transistor is connected with the first pixel electrode, the grid electrode of the second transistor is connected with the grid line, the source electrode of the second transistor is connected with the data line, the drain electrode of the second transistor is connected with the second pixel electrode, each pixel unit further comprises a third transistor, a first electrode block and a second electrode block, the source electrode of the third transistor is connected with the first electrode block, the drain electrode of the first transistor is connected with the first electrode block, the drain electrode of the third transistor is connected with the second electrode block, and the orthographic projection of the second electrode block on the first substrate is overlapped with the orthographic projection of the first storage line on the first substrate; the area of the first pixel electrode is a1, the area of the portion where the second electrode block overlaps the first storage line is a2, and the ratio of a1 to a2 ranges from 15 to 40; and/or the area of the portion of the first electrode block overlapping the first storage line is E, and the ratio of A2 to E ranges from 0.18 to 0.54. Therefore, the array substrate can form a plurality of domains in the same pixel unit by arranging the first pixel electrode and the second pixel electrode which are driven by different transistors in the same pixel unit; in addition, the array substrate can also discharge the first pixel electrode through a capacitor formed by the second electrode block and the first storage line, so that the first pixel electrode and the second pixel electrode in the same pixel unit have different voltage differences with the common electrode. Therefore, the array substrate can enable liquid crystal molecules corresponding to the first pixel electrode and the second pixel electrode to have different deflection directions, so that the visual angle of a display panel adopting the array substrate can be improved, and the display quality can be improved.

At least one embodiment of the present disclosure provides an array substrate, including: a first substrate base plate; a plurality of pixel units on the first substrate; a gate line extending in a first direction; and a data line extending in a second direction, the second direction intersecting the first direction; a first storage line extending in the first direction or the second direction, at least one of the pixel units including a first transistor, a second transistor, a first pixel electrode, and a second pixel electrode, a gate of the first transistor being connected to the gate line, a source of the first transistor being connected to the data line, a drain of the first transistor being connected to the first pixel electrode, a gate of the second transistor being connected to the gate line, a source of the second transistor being connected to the data line, a drain of the second transistor being connected to the second pixel electrode, at least one of the pixel units further including a third transistor, a first electrode block, and a second electrode block, a source of the third transistor being connected to the first electrode block, a drain of the first transistor being connected to the first electrode block, a drain of the third transistor being connected to the second electrode block, an orthographic projection of the second electrode block on the first substrate base plate overlaps with an orthographic projection of the first storage line on the first substrate base plate, an area of the first pixel electrode is A1, an area of a portion of the second electrode block overlapping with the first storage line is A2, and a ratio of the A1 to the A2 is in a range of 15-40; and/or the area of the part of the first electrode block, which overlaps the first storage line, is E, and the ratio of A2 to E ranges from 0.18 to 0.54.

For example, in the array substrate provided in an embodiment of the present disclosure, a ratio Z1 of the a2 to the E, and a ratio Z2 of the width-to-length ratio of the channel region of the first transistor and the width-to-length ratio of the channel region of the third transistor satisfy the following formula:

Z1=F*Z2，

wherein, the value range of F is 0.8-1.5, and the ratio of the width-to-length ratio of the channel region of the first transistor to the width-to-length ratio of the channel region of the third transistor is 0.15-0.45.

For example, in the array substrate provided in an embodiment of the present disclosure, a ratio of the width-to-length ratio of the channel region of the first transistor to the width-to-length ratio of the channel region of the third transistor ranges from 0.2 to 0.35.

For example, in an array substrate provided by an embodiment of the present disclosure, a ratio of the a1 to the a2 is in a range of 25 to 30.

For example, in an array substrate provided by an embodiment of the present disclosure, the first electrode blocks and the second electrode blocks are arranged along the first direction, and an orthogonal projection of the first electrode blocks on the first substrate overlaps an orthogonal projection of the first storage lines on the first substrate.

For example, in the array substrate provided by an embodiment of the present disclosure, the gate line is disposed between the first pixel electrode and the second pixel electrode, and the data line is disposed at one side of the first pixel electrode and the second pixel electrode.

For example, in the array substrate provided in an embodiment of the present disclosure, the plurality of pixel units includes a first color pixel unit, a second color pixel unit, and a third color pixel unit, an area range of the first pixel electrode in the first color pixel unit is 12000-15000 square micrometers, and an area range of a portion of the first storage line overlapped by the second electrode block in the first color pixel unit is 400-460 square micrometers.

For example, in the array substrate provided in an embodiment of the disclosure, an area range of the first pixel electrode in the first color pixel unit is 13000-14000 square micrometers, and an area range of a portion of the first color pixel unit where the second electrode block overlaps the first storage line is 440-460 square micrometers.

For example, in the array substrate provided in an embodiment of the present disclosure, the area range of the first pixel electrode in the second color pixel unit is 11500-14500 square micrometers, and the area range of the overlapping portion of the second electrode block and the first storage line in the second color pixel unit is 390-450 square micrometers.

For example, in the array substrate provided in an embodiment of the present disclosure, an area range of the first pixel electrode in the second color pixel unit is 13000-14000 square micrometers, and an area range of a portion of the second electrode block in the second color pixel unit overlapping with the first storage line is 420-450 square micrometers.

For example, in the array substrate provided by an embodiment of the present disclosure, in the first color pixel unit, a ratio range of an area of the first pixel electrode to an area of a portion where the second electrode block overlaps the first storage line is B1; in the second color pixel cell, a ratio range of an area of the first pixel electrode to an area of a portion where the second electrode block overlaps the first storage line is B2; the ratio of the B1 to the B2 ranges from 0.95 to 0.99.

For example, in the array substrate provided in an embodiment of the present disclosure, an area range of the first pixel electrode in the third color pixel unit is 11000-13500 square micrometers, and an area range of a portion of the third color pixel unit where the second electrode block overlaps the first storage line is 350-400 square micrometers.

For example, in the array substrate provided in an embodiment of the present disclosure, an area range of the first pixel electrode in the third color pixel unit is 11000-12500 square micrometers, and an area range of a portion of the third color pixel unit where the second electrode block overlaps the first storage line is 350-380 square micrometers.

For example, in the array substrate provided by an embodiment of the present disclosure, in the first color pixel unit, a ratio range of an area of the first pixel electrode to an area of a portion where the second electrode block overlaps the first storage line is B1; in the third color pixel cell, a ratio range of an area of the first pixel electrode to an area of a portion where the second electrode block overlaps the first storage line is B3; the ratio of the B1 to the B3 ranges from 1.03 to 1.05.

For example, an embodiment of the present disclosure provides an array substrate, further including: a second storage line; and a third electrode block connected to a drain of the third transistor, an orthographic projection of the third electrode block on the first substrate overlapping an orthographic projection of the second storage line on the first substrate.

For example, an embodiment of the present disclosure provides an array substrate, further including: and the storage connecting line connects the first storage line and the second storage line, and the orthographic projection of the storage connecting line on the substrate base plate, the orthographic projection of the first pixel electrode on the substrate base plate and the orthographic projection of the second pixel electrode on the substrate base plate are arranged at intervals.

For example, in an array substrate provided in an embodiment of the present disclosure, the storage connection line is disposed in the same layer as at least one of the first pixel electrode and the source electrode of the first transistor.

For example, in an array substrate provided in an embodiment of the present disclosure, the storage connection line is a conductive semiconductor layer, the first transistor includes a first active layer, and the storage connection line is disposed in the same layer as the first active layer of the first transistor.

For example, in an array substrate provided by an embodiment of the present disclosure, the plurality of pixel units includes a first color pixel unit, a second color pixel unit, and a third color pixel unit, the first color pixel unit is configured to emit red light, the second color pixel unit is configured to emit green light, the third color pixel unit is configured to emit blue light, and the storage connection line is located within the third color pixel unit.

For example, in the array substrate provided by an embodiment of the present disclosure, the first storage line is located at a side of the gate line close to the center of the first pixel electrode, and the second storage line is located at a side of the gate line close to the center of the second pixel electrode.

For example, in an array substrate provided by an embodiment of the present disclosure, an area of a portion where the second electrode block overlaps the first storage line is equal to an area of a portion where the third electrode block overlaps the second storage line.

For example, in an array substrate provided by an embodiment of the present disclosure, a ratio of an area of a portion where the second electrode block overlaps the first storage line to an area of a portion where the third electrode block overlaps the second storage line is 0.7 to 0.9.

For example, in the array substrate provided by an embodiment of the present disclosure, the third transistor includes a first channel region and a second channel region, the drain of the third transistor includes a first sub-drain and a second sub-drain, the first sub-drain is located on a side of the first channel region away from the source, the second sub-drain is located on a side of the second channel region away from the source, the first sub-drain is electrically connected to the second electrode block, and the second sub-drain is electrically connected to the third electrode block.

For example, in the array substrate provided by an embodiment of the present disclosure, a ratio of the width-to-length ratio of the first channel region to the width-to-length ratio of the second channel region is 0.9 to 2.5.

For example, in an array substrate provided in an embodiment of the present disclosure, a gate electrode of the third transistor is connected to the gate line.

For example, in an array substrate provided in an embodiment of the present disclosure, a gate electrode of the third transistor is integrated with the gate line.

For example, an embodiment of the present disclosure provides an array substrate, further including: and the discharge control line extends along the first direction, the grid electrode of the third transistor is connected with the discharge control line, and the discharge control line is positioned on one side of the first storage line far away from the grid line.

For example, in an array substrate provided in an embodiment of the present disclosure, the first storage line includes: a first body portion extending in the first direction; and a first extension portion extending from the first main body portion in the second direction along the discharge control line, an orthographic projection of the second electrode block on the first substrate overlapping an orthographic projection of the first extension portion on the first substrate.

For example, an embodiment of the present disclosure provides an array substrate, further including: the first storage line further includes a second extension portion, the second extension portion extends from the first main body portion along the second direction, an orthographic projection of the fourth electrode block on the first substrate overlaps an orthographic projection of the second extension portion on the first substrate, the third transistor includes a first channel region and a second channel region, a drain of the third transistor includes a first drain and a second drain, the first drain is located on a side of the first channel region away from the source, the second drain is located on a side of the second channel region away from the source, the first drain is electrically connected to the second electrode block, and the second drain is electrically connected to the fourth electrode block.

For example, in an array substrate provided by an embodiment of the present disclosure, the first storage line further includes a connection portion connecting the first extension portion and the second extension portion to form a ring structure with the first main body portion.

For example, in the array substrate provided by an embodiment of the present disclosure, the second electrode block is located at a first corner of the first pixel electrode, and the fourth electrode block is located at a second corner of the first pixel electrode.

For example, in the array substrate provided in an embodiment of the present disclosure, a source of the third transistor is connected to a drain of the first transistor through the first pixel electrode, the source of the third transistor divides the first pixel electrode into a first sub-portion and a second sub-portion, and a ratio of an area of the first sub-portion to an area of the second sub-portion ranges from 92% to 100%.

For example, in the array substrate provided by an embodiment of the present disclosure, the gate line includes a protrusion, a region where the protrusion is located is configured to place a spacer, the plurality of pixel units includes a first color pixel unit, a second color pixel unit, and a third color pixel unit, the number and size of the protrusion included in the first color pixel unit are different from the number and size of the protrusion included in the second color pixel unit, and the number and size of the protrusion included in the second color pixel unit are different from the number and size of the protrusion included in the third color pixel unit.

For example, in the array substrate provided by an embodiment of the present disclosure, a ratio of sizes of the protruding portions in any two of the first color pixel unit, the second color pixel unit, and the third color pixel unit is inversely proportional to an area ratio of the first pixel electrode.

For example, in the array substrate provided by an embodiment of the present disclosure, the first pixel electrode is electrically connected to the drain of the first transistor through a via connection structure, and an orthographic projection of the protrusion on the first substrate and an orthographic projection of the via connection structure on the first substrate are spaced apart from each other.

For example, in an array substrate provided by an embodiment of the present disclosure, the first transistor includes a first active layer, the second transistor includes a second active layer, the third transistor includes a third active layer, and a material of at least one of the first active layer, the second active layer, and the third active layer includes indium gallium zinc oxide.

For example, in an array substrate provided in an embodiment of the present disclosure, at least one of the first active layer, the second active layer, and the third active layer includes: a first semiconductor layer; the second semiconductor layer is positioned on one side, far away from the first substrate, of the first semiconductor layer, and the density of the second semiconductor layer is greater than that of the first semiconductor layer.

For example, in an array substrate provided by an embodiment of the present disclosure, a material of the second semiconductor layer includes crystalline indium gallium zinc oxide.

For example, in an array substrate provided in an embodiment of the present disclosure, the second electrode block extends along the second direction.

For example, in the array substrate provided by an embodiment of the present disclosure, the data line includes a bent portion, and an orthogonal projection of the bent portion on the first substrate overlaps an orthogonal projection of the second electrode block on the first substrate.

For example, in the array substrate provided in an embodiment of the present disclosure, the plurality of pixel units includes a first color pixel unit, a second color pixel unit, and a third color pixel unit, the bending portion includes a vertical portion extending along the second direction, a distance between the vertical portion in the first color pixel unit and the second electrode block is J1, a distance between the vertical portion in the second color pixel unit and the second electrode block is J2, a distance between the vertical portion in the third color pixel unit and the second electrode block is J3, and J1, J2, and J3 are not equal.

For example, in the array substrate provided by an embodiment of the present disclosure, values of the J1, the J2, and the J3 range from 3 to 12 micrometers, a difference between the J1 and the J2 ranges from 0.5 to 5 micrometers, and a difference between the J2 and the J3 ranges from 0.5 to 5 micrometers.

For example, in an array substrate provided in an embodiment of the present disclosure, the first pixel electrode includes a plurality of first slits, and the second pixel electrode includes a plurality of second slits.

At least one embodiment of the present disclosure further provides a display panel including the array substrate of any one of the above.

For example, an embodiment of the present disclosure provides a display panel further including: the opposite substrate is arranged opposite to the array substrate and comprises a second substrate and a common electrode; a liquid crystal layer between the array substrate and the opposite substrate, the array substrate further including a gate insulating layer between the gate of the first transistor and the source of the first transistor, between the gate of the second transistor and the source of the second transistor, and between the gate of the third transistor and the source of the third transistor, a ratio of a thickness d1 of the liquid crystal layer to a thickness d2 of the gate insulating layer satisfying the following formula:

d1/d2=(ε1/ε2) × (A1/A2) × (W2/W1) ×(L1/L2)，

wherein ∈ 1 is a dielectric constant of a liquid crystal material in the liquid crystal layer, ∈ 2 is a dielectric constant of the gate insulating layer, W1 is a channel width of the first transistor, L1 is a channel length of the first transistor, W2 is a channel width of the third transistor, and L2 is a channel length of the third transistor.

d1/d2=(ε1/ε2) × A1/[A2× (W2/W1) ×(L1/L2)- Scs- Sgd]，

wherein ∈ 1 is a dielectric constant of a liquid crystal material in the liquid crystal layer, ∈ 2 is a dielectric constant of the gate insulating layer, W1 is a channel width of the first transistor, L1 is a channel length of the first transistor, W2 is a channel width of the third transistor, L2 is a channel length of the third transistor, Scs is a storage capacitance formed between the first electrode block and the first storage line, and Sgd is a parasitic capacitance between the gate and the drain of the first transistor.

For example, an embodiment of the present disclosure provides a display panel further including: and the frame sealing glue is arranged between the array substrate and the opposite substrate and surrounds the liquid crystal layer.

At least one embodiment of the present disclosure also provides a display device including the display panel of any one of the above.

Drawings

To more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly introduced below, and it is apparent that the drawings in the following description relate only to some embodiments of the present disclosure and are not limiting to the present disclosure.

Fig. 1 is a schematic structural diagram of a first array substrate according to an embodiment of the present disclosure;

fig. 2 is a schematic structural diagram of a pixel unit on an array substrate according to an embodiment of the present disclosure;

fig. 3 is a schematic structural diagram of a second array substrate according to an embodiment of the present disclosure;

fig. 4 is a schematic structural diagram of a third array substrate according to an embodiment of the disclosure;

fig. 5 is a schematic structural diagram of a pixel unit on another array substrate according to an embodiment of the present disclosure;

fig. 6 is a schematic structural diagram of a fourth array substrate according to an embodiment of the present disclosure;

fig. 7 is a schematic structural diagram of a fifth array substrate according to an embodiment of the present disclosure;

fig. 8 is a schematic structural diagram of a sixth array substrate according to an embodiment of the present disclosure;

fig. 9 is a schematic structural diagram of a seventh array substrate according to an embodiment of the disclosure;

fig. 10 is a schematic structural diagram of an eighth array substrate according to an embodiment of the present disclosure;

fig. 11 is a schematic structural view illustrating an active layer in an array substrate according to an embodiment of the present disclosure;

fig. 12 is a schematic structural diagram of a ninth array substrate according to an embodiment of the present disclosure;

fig. 13 is a schematic structural diagram of a tenth array substrate according to an embodiment of the present disclosure;

fig. 14 is a schematic structural diagram of an eleventh array substrate according to an embodiment of the present disclosure;

fig. 15 is a schematic view of an array substrate according to an embodiment of the present disclosure;

fig. 16 is a schematic structural diagram of a display panel according to an embodiment of the disclosure; and

fig. 17 is a schematic diagram of a display device according to an embodiment of the disclosure.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be described below clearly and completely with reference to the accompanying drawings of the embodiments of the present disclosure. It is to be understood that the described embodiments are only a few embodiments of the present disclosure, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the disclosure without any inventive step, are within the scope of protection of the disclosure.

Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.

The various components or structures in the drawings are not necessarily to scale, and the dimensions of the various components or structures may be exaggerated or reduced for clarity, but are not intended to limit the scope of the present disclosure. Detailed descriptions of known functions and known components may be omitted in order to keep the following description of the embodiments of the present disclosure clear and concise.

With the continuous development of liquid crystal display technology, how to further improve the viewing angle and display quality of the liquid crystal display is one of the research hotspots of various manufacturers.

The embodiment of the disclosure provides an array substrate, a display panel and a display device. The array substrate comprises a first substrate, a plurality of pixel units, a grid line, a data line and a first storage line; a plurality of pixel units are positioned on the first substrate base plate; the grid line is positioned on the first substrate and extends along a first direction; the data line is positioned on the first substrate base plate and extends along a second direction, and the second direction is intersected with the first direction; the first storage line is located on the first substrate base plate and extends along a first direction. Each pixel unit comprises a first transistor, a second transistor, a first pixel electrode and a second pixel electrode, a grid line is arranged between the first pixel electrode and the second pixel electrode, and a data line is arranged on one side of the first pixel electrode and one side of the second pixel electrode; the grid electrode of the first transistor is connected with the grid line, the source electrode of the first transistor is connected with the data line, the drain electrode of the first transistor is connected with the first pixel electrode, the grid electrode of the second transistor is connected with the grid line, the source electrode of the second transistor is connected with the data line, the drain electrode of the second transistor is connected with the second pixel electrode, each pixel unit further comprises a third transistor, a first electrode block and a second electrode block, the source electrode of the third transistor is connected with the first electrode block, the drain electrode of the first transistor is connected with the first electrode block, the drain electrode of the third transistor is connected with the second electrode block, and the orthographic projection of the second electrode block on the first substrate is overlapped with the orthographic projection of the first storage line on the first substrate; the area of the first pixel electrode is a1, the area of the portion of the second electrode block overlapping the first storage line is a2, the area of the portion of the first electrode block overlapping the first storage line is E, the ratio of a1 to a2 ranges from 15 to 40, and the ratio of a2 to E ranges from 0.18 to 0.54. Therefore, the array substrate can form a plurality of domains in the same pixel unit by arranging the first pixel electrode and the second pixel electrode which are driven by different transistors in the same pixel unit; in addition, the array substrate can also discharge the first pixel electrode through a capacitor formed by the second electrode block and the first storage line, so that the first pixel electrode and the second pixel electrode in the same pixel unit have different voltage differences with the common electrode. Therefore, the array substrate can enable liquid crystal molecules corresponding to the first pixel electrode and the second pixel electrode to have different deflection directions, so that the visual angle of a display panel adopting the array substrate can be improved, and the display quality can be improved.

Hereinafter, the array substrate, the display panel and the display device provided by the embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

An embodiment of the present disclosure provides an array substrate. Fig. 1 is a schematic structural diagram of a first array substrate according to an embodiment of the present disclosure; fig. 2 is a schematic structural diagram of a pixel unit on an array substrate according to an embodiment of the present disclosure. As shown in fig. 1 and 2, the array substrate 100 includes a first substrate 110, a plurality of pixel units 120, a gate line 130, a data line 140, and a first storage line 151; a plurality of pixel units 120 are located on the first substrate 110; the gate line 130 is located on the first substrate 110 and extends along a first direction X; the data line 140 is located on the first substrate 110 and extends along a second direction Y, which intersects the first direction X; the first storage lines 151 are positioned on the first substrate base 110 and extend in the first direction X. It should be noted that, since the gate line extends along the first direction and the data line extends along the second direction, the gate line and the data line may be located on different conductive layers; since the first storage line also extends in the first direction, the gate line and the first storage line may be located at the same conductive layer or at different conductive layers.

As shown in fig. 1 and 2, each pixel unit 120 includes a first transistor T1, a second transistor T2, a first pixel electrode 161, and a second pixel electrode 162; the gate electrode G1 of the first transistor T1 is connected to the gate line 130, the source electrode S1 of the first transistor T1 is connected to the data line 140, and the drain electrode D1 of the first transistor T1 is connected to the first pixel electrode 161, so that the first transistor T1 can apply the data voltage on the data line 140 to the first pixel electrode 161 by being driven by the gate line 130; the gate electrode G2 of the second transistor T2 is connected to the gate line 130, the source electrode S2 of the second transistor T2 is connected to the data line 140, and the drain electrode D2 of the second transistor T2 is connected to the second pixel electrode 162, so that the second transistor T2 can apply the data voltage on the data line 140 to the second pixel electrode 162 by driving the gate line 130.

As shown in fig. 1 and 2, each pixel unit 120 further includes a third transistor T3, a first electrode block 171, and a second electrode block 172, the source S3 of the third transistor T3 is connected to the first electrode block 171, the drain D1 of the first transistor T1 is connected to the first electrode block 171, the drain D3 of the third transistor T3 is connected to the second electrode block 172, and the orthographic projection of the second electrode block 172 on the first substrate 110 overlaps the orthographic projection of the first storage line 151 on the first substrate 110; the area of the first pixel electrode 161 is a1, the area of the portion of the second electrode block 172 overlapping the first storage line 151 is a2, the area of the portion of the first electrode block 171 overlapping the first storage line 151 is E, the ratio of a1 to a2 ranges from 15 to 40, and the ratio of a2 to E ranges from 0.18 to 0.54.

In the array substrate provided by the embodiment of the present disclosure, since the drain of the first transistor is connected to the first pixel electrode and the drain of the second transistor is connected to the second pixel electrode, the first pixel electrode and the second pixel electrode are charged by the first transistor and the second transistor, respectively; in addition, because the grid electrode of the first transistor and the grid electrode of the second transistor are both connected with the same grid line, the source electrode of the first transistor and the source electrode of the second transistor are both connected with the same data line, the first pixel electrode and the second pixel electrode are driven by the same grid line and are loaded with the same data signal, the first pixel electrode and the second pixel electrode are used as the same sub-pixel when displaying; that is, the pixel unit is also a sub-pixel.

Since the drain electrode of the third transistor is connected to the second electrode block, and the orthographic projection of the second electrode block on the first substrate overlaps the orthographic projection of the first storage line on the first substrate, the second electrode block and the first storage line may form a discharge capacitance and may be used to discharge charge on the first pixel electrode. As described above, although the first pixel electrode and the second pixel electrode are driven by the same gate line and are loaded with the same data signal, the first pixel electrode and the second pixel electrode are connected to different transistors, and the discharge capacitor formed by the second electrode block and the first storage line can be used to discharge the charges on the first pixel electrode, so that the charges on the first pixel electrode and the second pixel electrode are unequal, and thus different voltage differences can be formed with the common electrode. Therefore, the array substrate can enable the liquid crystal molecules corresponding to the first pixel electrode and the second pixel electrode to have different deflection directions or different deflection degrees, and the visual angle of the sub-area corresponding to the first pixel electrode is different from that of the sub-area corresponding to the second pixel electrode. Moreover, because the ratio of a1 to a2 ranges from 15 to 40, and the ratio of a2 to E ranges from 0.18 to 0.54, the first pixel electrode and the second pixel electrode have appropriate voltage difference, and the discharge capacitor has faster charge and discharge speed, and the corresponding speed of the pixel unit is not affected. Therefore, the pixel unit on the array substrate has wider visual angle and higher display quality.

It should be noted that the pixel units may include pixel units of different colors, and when performing display, the pixel units of different colors may form a pixel point to implement color display. For example, the pixel units may include a red pixel unit, a green pixel unit, and a blue pixel unit; the red pixel unit, the green pixel unit and the blue pixel unit can form a pixel point to realize RGB color display.

In some examples, the ratio of a1 above to a2 above ranges from 25 to 30; that is, the ratio of the area a1 of the first pixel electrode to the area a2 of the portion where the second electrode block overlaps the first storage line ranges from 25 to 30. Therefore, the array substrate can better give consideration to both the visual angle and the display quality.

In some examples, a ratio Z1 of the above-described a2 to the above-described E to a ratio Z2 of the width-to-length ratio of the channel region of the first transistor and the width-to-length ratio of the channel region of the third transistor satisfies the following equation:

Z1=F*Z2，

Assuming that the charged amount QR1 of the pixel cell 120 is equal to P times the discharged capacitance discharge amount QR2, QR1 and QR2 satisfy the following formula:

QR1=P*QR2 (1)，

wherein P is more than 0 and less than 1.

On the other hand, QR1= Ion1 charging time T1 of first transistor T1, QR2= Ion2 discharging time T2 of third transistor T3, and current formula Ion ═ μ n × W/L × Ci (VGS-VTH) × VDS, it is therefore possible to obtain:

μ1*W1/L1*CSiNx*(VGS1-VTH1)*VDS1*t1=P*μ2*W2/L2*CSiNx*(VGS2-VTH2)*VDS2 *t2 (2)，

where μ n denotes a carrier mobility, Ci denotes a parasitic capacitance Cgs between the gate and the source of the transistor per unit area (i.e., Ci = Cgs/S), W denotes a width of a channel region of the transistor, L denotes a length of the channel region of the transistor, Vgs denotes a gate-source voltage of the transistor, Vth denotes a threshold voltage of the transistor, and Vds denotes a drain-source voltage of the transistor.

It can be seen that the charging current Ion is proportional to the width-to-length ratio (W/L) of the channel region of the transistor, so that the change of the width-to-length ratio (W/L) will affect the charging current Ion proportionally, and since the first transistor T1 and the third transistor T3 are formed by the same process, that is, μ n, Ci, (VGS-VTH) VDS of the two transistors are almost equal, the process can be simplified.

Thus, QR1= P × QR2= [ (W1/L1)/(W2/L2) ] (t1/t2) × QR2 (3),

since the gate line on times of t1 and t2 are almost the same, for example, they can be controlled by the same gate line, and they can be approximately equal, therefore, the above formula can be simplified as:

QR1=[(W1/L1)/(W2/L2)] *QR2 (4)。

optionally, when the ratio of the width-to-length ratio of the channel region of the first transistor T1 to the width-to-length ratio of the channel region of the second transistor T2 is in the range of 0.15 to 0.45, the array substrate can better adjust the charge and discharge capacity of the pixel unit, stabilize the deflection of the liquid crystal molecules, and thus have better display quality.

In some examples, the ratio of the width-to-length ratio of the channel region of the first transistor T1 to the width-to-length ratio of the channel region of the second transistor T2 ranges from 0.2 to 0.35. Therefore, the array substrate can better adjust the charge and discharge electricity quantity of the pixel unit, further stabilize the deflection of liquid crystal molecules and further improve the display quality.

In some examples, as shown in fig. 1 and 2, the first electrode block 171 and the second electrode block 172 are arranged in the first direction X, and an orthogonal projection of the first electrode block 171 on the first substrate base 110 overlaps an orthogonal projection of the first storage line 161 on the first substrate base 110. Thus, the first electrode block 171 and the first storage line 161 may constitute a storage capacitor; by such design, the same first storage line 161 is utilized to form a storage capacitor required for driving liquid crystal molecules with the first storage line 161, and the second electrode block 172 and the first storage line 161 form a discharge capacitor, thereby saving the layout space of the wiring.

Optionally, the first storage line extends in at least one of the first direction or the second direction. Of course, the first storage lines may extend in other directions.

In some examples, as shown in fig. 1 and 2, the gate line 130 is disposed between the first pixel electrode 161 and the second pixel electrode 162; the data line 140 is disposed at one side of the first pixel electrode 161 and the second pixel electrode 162, that is, the data line 140 is disposed at the same side of the first pixel electrode 161 and the second pixel electrode 162. Of course, the embodiments of the present disclosure include, but are not limited to, that the gate line may also be disposed on the same side of the first pixel electrode and the second pixel electrode.

In some examples, as shown in fig. 1 and 2, the plurality of pixel units 120 includes a first color pixel unit 121, a second color pixel unit 122, and a third color pixel unit 123; the area of the first pixel electrode 161 in the first color pixel unit 121 is 12000-15000 square micrometers, and the area of the overlapping portion of the second electrode block 172 and the first storage line 151 in the first color pixel unit 121 is 400-460 square micrometers. Therefore, the first color pixel unit has a wider visual angle and also has higher display quality.

For example, a first color pixel cell is configured to emit light of a first color, a second color pixel cell is configured to emit light of a second color, and a third color pixel cell is configured to emit light of a third color.

For example, the first color may be red, the second color may be green, and the third color may be blue. Of course, the disclosed embodiments include, but are not limited to, other colors for the first color, the second color, and the third color.

In some examples, the area of the first pixel electrode 161 in the first color pixel unit 121 ranges from 13000 and 14000 square microns, and the area of the portion of the first storage line 161 overlapped by the second electrode block 172 in the first color pixel unit 121 ranges from 440 and 460 square microns. Therefore, the first color pixel unit has a wider visual angle and also has higher display quality.

In some examples, the area of the first pixel electrode 161 in the second color pixel unit 122 ranges from 11500 to 14500 square microns, and the area of the overlapping portion of the second electrode block 172 and the first storage line 151 in the second color pixel unit 122 ranges from 390 to 450 square microns. Therefore, the second color pixel unit has a wider visual angle and also has higher display quality.

In some examples, the area of the first pixel electrode 161 in the second color pixel unit 122 ranges from 13000 and 14000 square microns, and the area of the portion of the second electrode block 172 in the second color pixel unit 122 overlapping the first storage line 151 ranges from 420 and 450 square microns. Therefore, the second color pixel unit has a wider visual angle and also has higher display quality.

In some examples, in the first color pixel unit 121, the ratio range of the area of the first pixel electrode 161 to the area of the portion where the second electrode block 172 overlaps the first storage line 151 is B1; in the second color pixel unit 122, the ratio range of the area of the first pixel electrode 161 to the area of the portion where the second electrode block 172 overlaps the first storage line 151 is B2; the ratio of B1 to B2 ranged from 0.95 to 0.99. Therefore, the first color pixel unit and the second color pixel unit can have a good light mixing effect, and the display quality can be improved.

In some examples, the area of the first pixel electrode 161 in the third color pixel unit 123 ranges from 11000 and 13500 square microns, and the area of the portion of the second electrode block 172 in the third color pixel unit 123 overlapping the first storage line 151 ranges from 350 and 400 square microns. Therefore, the third color pixel unit has a wider visual angle and also has higher display quality.

In some examples, the area of the first pixel electrode 161 in the third color pixel unit 123 is in the range of 11000 and 12500 square micrometers, and the area of the portion of the third color pixel unit 123 where the second electrode block 172 overlaps the first storage line 151 is in the range of 350 and 380 square micrometers. Therefore, the third color pixel unit has a wider visual angle and also has higher display quality.

In some examples, in the first color pixel unit 121, the ratio range of the area of the first pixel electrode 161 to the area of the portion where the second electrode block 172 overlaps the first storage line 151 is B1; in the third color pixel unit 123, the ratio range of the area of the first pixel electrode 161 to the area of the portion where the second electrode block 172 overlaps the first storage line 151 is B3; the ratio of B1 to B3 ranged from 1.03 to 1.05. Therefore, the first color pixel unit and the third color pixel unit can have a good light mixing effect, and the display quality can be improved.

In some examples, as shown in fig. 1 and 2, the gate electrode G1 of the first transistor T1 is integrated with the gate line 130; the gate G2 of the second transistor T2 is integrated with the gate line 130.

For example, as shown in fig. 1 and 2, the first active layer Y1 of the first transistor T1 is disposed on the gate line 130, and an orthogonal projection of the first active layer Y1 of the first transistor T1 on the substrate base 110 is located within an orthogonal projection of the gate line 130 on the substrate base 110; at this time, a portion of the gate line 130 overlapping the first active layer Y1 may serve as the gate electrode G1 of the first transistor T1.

For example, as shown in fig. 1 and 2, the second active layer Y2 of the second transistor T2 is disposed on the gate line 130, and an orthogonal projection of the second active layer Y2 of the second transistor T2 on the substrate base plate 110 is located within an orthogonal projection of the gate line 130 on the substrate base plate 110; at this time, a portion of the gate line 130 overlapping the second active layer Y2 may serve as the gate electrode G2 of the second transistor T2.

In some examples, as shown in fig. 1 and 2, the orthographic projection of the source S1 of the first transistor T1 on the substrate 110 may be U-shaped, with the drain D1 of the first transistor T1 disposed between the U-shaped sources S1; an orthographic projection of the source S2 of the second transistor T2 on the substrate 110 is shaped like a U, and the drain D2 of the second transistor T2 is disposed between the U-shaped sources S2.

In some examples, as shown in fig. 1 and 2, the source S1 of the first transistor T1 and the source S2 of the second transistor T2 may be integrated into a single body, and the orthographic projection shape of the integrated source S1 and source S2 on the substrate base plate 110 may be an H shape.

Of course, the source S1 of the first transistor T1/the source S2 of the second transistor T2 are not limited to the above shape, and may have other shapes, for example: a straight line shape.

In some examples, as shown in fig. 1 and 2, the gate G3 of the third transistor T3 is connected to the gate line 130. That is, the third transistor T3 is also turned on by the gate line 130. Thus, the first pixel electrode can be charged and simultaneously discharged by the discharge capacitor. Of course, the disclosed embodiments include, but are not limited to, the third transistor T3 may also be additionally provided with a control line and controlled by the additionally provided control line.

In some examples, as shown in fig. 1 and 2, the gate G3 of the third transistor T3 is integrated with the gate 130.

For example, as shown in fig. 1 and 2, the third active layer Y3 of the third transistor T3 is disposed on the gate line 130, and an orthogonal projection of the third active layer Y3 of the third transistor T3 on the substrate base plate 110 is located within an orthogonal projection of the gate line 130 on the substrate base plate 110; at this time, a portion of the gate line 130 overlapping the third active layer Y3 may serve as the gate electrode G3 of the third transistor T3.

In some examples, the first substrate 110 may be a rigid substrate or a flexible substrate.

In some examples, the first substrate 110 may be a glass substrate, a quartz substrate, a plastic substrate. Of course, embodiments of the present disclosure include, but are not limited to, substrate base plates, and other suitable base plates may also be used.

In some examples, the material of the gate line 130 may be selected from one or more of copper, aluminum, molybdenum, silver, gold, and titanium. Of course, embodiments of the present disclosure include, but are not limited to, other suitable conductive materials for the gate lines.

In some examples, the gate line 130 may be a stacked structure including a plurality of sub-metal layers, and a material of each sub-metal layer may be selected from one or more of copper, aluminum, molybdenum, silver, gold, and titanium. Of course, the gate line may also be a single layer structure, including but not limited to this in the disclosed embodiments.

In some examples, the material of the data line 140 may be selected from one or more of copper, aluminum, molybdenum, silver, gold, and titanium. Of course, embodiments of the present disclosure include, but are not limited to, other suitable conductive materials for the gate lines.

In some examples, the data line 140 may be a laminate structure including a plurality of sub-metal layers, and a material of each sub-metal layer may be selected from one or more of copper, aluminum, molybdenum, silver, gold, and titanium. Of course, the gate line may also be a single layer structure, including but not limited to this in the disclosed embodiments.

In some examples, the first storage line 151 and the gate line 130 may be disposed at the same layer, i.e., the first storage line 151 and the gate line 130 are formed using the same conductive layer through the same patterning process. Therefore, the array substrate can save the mask process and reduce the thickness of the array substrate. Of course, the embodiments of the present disclosure include, but are not limited to, the first storage line and the gate line may be arranged in different layers.

In some examples, the material of the first storage line 151 may be selected from one or more of copper, aluminum, molybdenum, silver, gold, and titanium. Of course, embodiments of the present disclosure include, but are not limited to, other suitable conductive materials for the gate lines.

In some examples, the first storage line 151 may have a stacked structure including a plurality of sub-metal layers, and a material of each sub-metal layer may be selected from one or more of copper, aluminum, molybdenum, silver, gold, and titanium. Of course, the gate line may also be a single layer structure, including but not limited to this in the disclosed embodiments.

In some examples, the material of the first and

second pixel electrodes

161 and 162 may be a transparent metal oxide, such as Indium Tin Oxide (ITO). Of course, the embodiments of the present disclosure include, but are not limited to, other suitable conductive materials may be used for the first pixel electrode and the second pixel electrode.

In some examples, an area of an orthogonal projection of the first pixel electrode 161 on the substrate 110 is larger than an area of an orthogonal projection of the second pixel electrode 162 on the substrate 110. Of course, the embodiments of the present disclosure include, but are not limited to, that the area of the orthographic projection of the first pixel electrode on the substrate base plate and the area of the orthographic projection of the second pixel electrode on the substrate base plate may be equal; alternatively, the area of the orthographic projection of the first pixel electrode 161 on the substrate 110 is smaller than the area of the orthographic projection of the second pixel electrode 162 on the substrate 110.

Fig. 3 is a schematic structural diagram of a second array substrate according to an embodiment of the disclosure. As shown in fig. 3, the first pixel electrode 161 includes a plurality of first slits 1610, and the second pixel electrode 162 includes a plurality of second slits 1620. Therefore, the first pixel electrode and the second pixel electrode are both slit electrodes.

In some examples, as shown in fig. 3, the first pixel electrode 161 includes a plurality of first slits 1610 having different deflection angles so that different domains may also be formed, thereby further increasing the viewing angle of the pixel unit. Similarly, the plurality of second slits 1620 included in the second pixel electrode 162 have different deflection angles, so that different domains can be formed, thereby further improving the viewing angle of the pixel unit.

For example, as shown in fig. 3, the first pixel electrode 161 may be divided into four regions, the first slits 1610 in the four regions having different deflection angles, so that four domains may be formed; similarly, the second pixel electrode 162 may be divided into four regions, and the second slits 1620 in the four regions have different deflection angles, so that four domains may be formed.

Fig. 4 is a schematic structural diagram of a third array substrate according to an embodiment of the disclosure; fig. 5 is a schematic structural diagram of a pixel unit on another array substrate according to an embodiment of the present disclosure. As shown in fig. 4 and 5, the array substrate 100 includes a first substrate 110, a plurality of pixel units 120, a gate line 130, a data line 140, a first storage line 151, and a second storage line 152; a plurality of pixel units 120 are located on the first substrate 110; the gate line 130 is located on the first substrate 110 and extends along a first direction X; the data line 140 is located on the first substrate 110 and extends along a second direction Y, which intersects the first direction X; the first storage lines 151 are positioned on the first substrate base 110 and extend in the first direction X; the second storage line 152 is positioned on the first substrate base 110 and extends in the first direction X.

As shown in fig. 4 and 5, each pixel unit 120 includes a first transistor T1, a second transistor T2, a first pixel electrode 161, and a second pixel electrode 162; the gate line 130 is disposed between the first pixel electrode 161 and the second pixel electrode 162; the data line 140 is disposed at one side of the first pixel electrode 161 and the second pixel electrode 162, that is, the data line 140 is disposed at the same side of the first pixel electrode 161 and the second pixel electrode 162; the gate electrode G1 of the first transistor T1 is connected to the gate line 130, the source electrode S1 of the first transistor T1 is connected to the data line 140, and the drain electrode D1 of the first transistor T1 is connected to the first pixel electrode 161, so that the first transistor T1 can apply the data voltage on the data line 140 to the first pixel electrode 161 by being driven by the gate line 130; the gate electrode G2 of the second transistor T2 is connected to the gate line 130, the source electrode S2 of the second transistor T2 is connected to the data line 140, and the drain electrode D2 of the second transistor T2 is connected to the second pixel electrode 162, so that the second transistor T2 can apply the data voltage on the data line 140 to the second pixel electrode 162 by driving the gate line 130.

As shown in fig. 4 and 5, each pixel unit 120 further includes a third transistor T3, a first electrode block 171, a second electrode block 172, and a third electrode block 173, a source S3 of the third transistor T3 is connected to the first electrode block 171, a drain D1 of the first transistor T1 is connected to the first electrode block 171, a drain D3 of the third transistor T3 is connected to the second electrode block 172, and the third electrode block 173 is connected to a drain D3 of the third transistor T3; an orthographic projection of the second electrode block 172 on the first substrate 110 overlaps with an orthographic projection of the first storage line 151 on the first substrate 110; an orthogonal projection of the third electrode block 173 on the first substrate 110 overlaps an orthogonal projection of the second storage line 152 on the first substrate 110.

For example, the orthographic projection of the third electrode block 173 on the first substrate 110 may not overlap the orthographic projection of the second pixel electrode 162 on the first substrate 110, so as to reduce the influence on the second pixel electrode 162 as much as possible.

In the array substrate, the second electrode block and the first storage line may form a first discharge capacitor, and the third electrode block and the second storage line may also form a second discharge capacitor; the first discharge capacitor and the second discharge capacitor can be used for releasing charges on the first pixel electrode. Although the first pixel electrode and the second pixel electrode are driven by the same grid line and loaded with the same data signal, the first pixel electrode and the second pixel electrode are connected with different transistors, and the first discharge capacitor and the second discharge capacitor can be used for releasing charges on the first pixel electrode, so that the charges on the first pixel electrode and the second pixel electrode are unequal, and different voltage differences can be formed between the first pixel electrode and the common electrode. Therefore, the array substrate can enable the liquid crystal molecules corresponding to the first pixel electrode and the second pixel electrode to have different deflection directions or different deflection degrees, and the visual angle of the sub-area corresponding to the first pixel electrode is different from that of the sub-area corresponding to the second pixel electrode. In addition, the array substrate can reasonably arrange the discharge capacitor for releasing the charges on the first pixel electrode, so that the overlarge area of the second electrode block is avoided, and the corner area in the pixel unit can be used for arranging the third electrode block, thereby fully utilizing the space on the array substrate on the premise of ensuring the sufficient capacitance value of the discharge capacitor.

It can be appreciated that, in light of the above examples, the array substrate provided by the embodiments of the present disclosure can also reduce the size of a single electrode block by providing more electrode blocks to form more discharge capacitors, and the electrode blocks are disposed at the corners of the pixel unit. Therefore, the array substrate ensures the capacitance value of the discharge capacitor on one hand, and can reduce the influence of the electrode block on the aperture ratio of the display unit on the other hand.

In some examples, the area of the first pixel electrode 161 is a1, the area of the portion of the second electrode block 172 overlapping the first storage line 151 is a2, the area of the portion of the third electrode block 173 overlapping the second storage line 152 is A3, and the ratio of the a1 to the sum of a2 and A3 is in the range of 15-40. Therefore, the first pixel electrode and the second pixel electrode have proper voltage difference, and meanwhile, the discharge capacitor has higher charge and discharge speed, and the corresponding speed of the pixel unit cannot be influenced. Therefore, the pixel unit on the array substrate has wider visual angle and higher display quality.

In some examples, as shown in fig. 4 and 5, the plurality of pixel units 120 includes a first color pixel unit 121, a second color pixel unit 122, and a third color pixel unit 123; the area of the first pixel electrode 161 in the first color pixel unit 121 ranges from 12000-. Therefore, the first color pixel unit has a wider visual angle and also has higher display quality.

In some examples, the area of the first pixel electrode 161 in the first color pixel unit 121 ranges from 13000 and 14000 square micrometers, and the sum of the area of the portion where the second electrode block 172 overlaps the first storage line 151 and the area of the portion where the third electrode block 173 overlaps the second storage line 152 in the first color pixel unit 121 ranges from 440 and 460 square micrometers. Therefore, the first color pixel unit has a wider visual angle and also has higher display quality.

In some examples, the area of the first pixel electrode 161 in the second color pixel unit 122 ranges from 11500 to 14500 square micrometers, and the sum of the area of the portion of the second electrode block 172 overlapping the first storage line 151 and the area of the portion of the third electrode block 173 overlapping the second storage line 152 in the second color pixel unit 122 ranges from 390 to 450 square micrometers. Therefore, the second color pixel unit has a wider visual angle and also has higher display quality.

In some examples, the area of the first pixel electrode 161 in the second color pixel unit 122 ranges from 13000 and 14000 square microns, and the sum of the area of the portion of the second electrode block 172 overlapping the first storage line 151 and the area of the portion of the third electrode block 173 overlapping the second storage line 152 in the second color pixel unit 122 ranges from 420 and 450 square microns. Therefore, the second color pixel unit has a wider visual angle and also has higher display quality.

In some examples, in the first color pixel unit 121, the ratio range of the area of the first pixel electrode 161 to the sum of the areas of the portion where the second electrode block 172 overlaps the first storage line 151 and the portion where the third electrode block 173 overlaps the second storage line 152 is B1; in the second color pixel unit 122, the range of the ratio of the area of the first pixel electrode 161 to the sum of the areas of the portion of the second electrode block 172 overlapping the first storage line 151 and the portion of the third electrode block 173 overlapping the second storage line 152 is B2; the ratio of B1 to B2 ranged from 0.95 to 0.99. Therefore, the first color pixel unit and the second color pixel unit can have a good light mixing effect, and the display quality can be improved.

In some examples, the area of the first pixel electrode 161 in the third color pixel unit 123 ranges from 11000 and 13500 square micrometers, and the sum of the area of the portion where the second electrode block 172 overlaps the first storage line 151 and the area of the portion where the third electrode block 173 overlaps the second storage line 152 in the third color pixel unit 123 ranges from 350 and 400 square micrometers. Therefore, the third color pixel unit has a wider visual angle and also has higher display quality.

In some examples, the area of the first pixel electrode 161 in the third color pixel unit 123 ranges from 11000 and 12500 square micrometers, and the sum of the area of the portion where the second electrode block 172 overlaps the first storage line 151 and the area of the portion where the third electrode block 173 overlaps the second storage line 152 in the third color pixel unit 123 ranges from 350 and 380 square micrometers. Therefore, the third color pixel unit has a wider visual angle and also has higher display quality.

In some examples, in the first color pixel unit 121, the ratio range of the area of the first pixel electrode 161 to the sum of the areas of the portion where the second electrode block 172 overlaps the first storage line 151 and the portion where the third electrode block 173 overlaps the second storage line 152 is B1; in the third color pixel unit 123, the range of the ratio of the area of the first pixel electrode 161 to the sum of the areas of the portion where the second electrode block 172 overlaps the first storage line 151 and the portion where the third electrode block 173 overlaps the second storage line 152 is B2; the ratio of B1 to B2 ranged from 0.95 to 0.99. Therefore, the first color pixel unit and the second color pixel unit can have a good light mixing effect, and the display quality can be improved.

In some examples, as shown in fig. 4 and 5, the first storage line 151 is positioned at a side of the gate line 130 near the center of the first pixel electrode 161, and the second storage line 152 is positioned at a side of the gate line 130 near the center of the second pixel electrode 162. That is, the first and second storage lines are disposed at both sides of the gate line, respectively. Of course, the embodiments of the present disclosure include, but are not limited to, that the first storage line and the second storage line may also be located at the same side of the gate line; and/or, the first pixel electrode 161 and the second pixel electrode 162 may also be located on the same side of the gate line.

In some examples, as shown in fig. 4 and 5, a distance between an orthogonal projection of the first storage line 151 on the substrate base 110 and an orthogonal projection of the gate line 130 on the substrate base 110 is equal to a distance between an orthogonal projection of the second storage line 152 on the substrate base 110 and an orthogonal projection of the gate line 130 on the substrate base 110. Therefore, the influence of the grid line on the first storage line and the second storage line is approximately equal, and the display quality of the pixel unit is improved. Of course, the embodiments of the present disclosure include, but are not limited to, that the distance between the orthographic projection of the first storage line on the substrate base plate and the orthographic projection of the gate line on the substrate base plate and the distance between the orthographic projection of the second storage line on the substrate base plate and the orthographic projection of the gate line on the substrate base plate may also be unequal.

In some examples, as shown in fig. 4 and 5, the area of a portion of the second electrode block 172 overlapping the first storage line 151 is equal to the area of a portion of the third electrode block 173 overlapping the second storage line 152. Therefore, the array substrate can better distribute the discharge capacitance of the first pixel electrode. Of course, the embodiments of the present disclosure include, but are not limited to, that the area of the portion where the second electrode block overlaps the first storage line and the area of the portion where the third electrode block overlaps the second storage line may not be the same.

For example, the ratio of the area of the portion of the second electrode block 172 overlapping the first storage line 151 to the area of the portion of the third electrode block 173 overlapping the second storage line 152 is 0.7-0.9.

In some examples, the first and

second storage lines

151 and 152 are disposed at the same layer as the gate line 130, i.e., the first and

second storage lines

151 and 152 and the gate line 130 are formed using the same conductive layer through the same patterning process. Therefore, the array substrate can save the mask process and reduce the thickness of the array substrate. Of course, the embodiments of the present disclosure include, but are not limited to, the first storage line and the gate line may be arranged in different layers.

In some examples, the material of the first and

second storage lines

151 and 152 may be selected from one or more of copper, aluminum, molybdenum, silver, gold, and titanium. Of course, embodiments of the present disclosure include, but are not limited to, other suitable conductive materials for the gate lines.

In some examples, the first and

second storage lines

151 and 152 may have a stacked structure including a plurality of sub-metal layers, and a material of each sub-metal layer may be selected from one or more of copper, aluminum, molybdenum, silver, gold, and titanium. Of course, the gate line may also be a single layer structure, including but not limited to this in the disclosed embodiments.

Fig. 6 is a schematic structural diagram of a fourth array substrate according to an embodiment of the disclosure. As shown in fig. 6, in each pixel unit 120, the third transistor T3 includes a first channel region C31 and a second channel region C32; the drain D3 of the third transistor T3 includes a first sub-drain D31 and a second sub-drain D32; the first sub-drain D31 is located at a side of the first channel region C31 away from the source S3, the second sub-drain D32 is located at a side of the second channel region C32 away from the source S3, the first sub-drain D31 is electrically connected to the second electrode block 172, and the second drain D32 is electrically connected to the third electrode block 173. Thus, the third transistor T3 has higher stability; even if one of the first channel region C31 and the second channel region C32 is damaged, the other can perform a discharge function.

In some examples, as shown in fig. 6, the ratio of the width-to-length ratio of the first channel region C31 to the width-to-length ratio of the second channel region C32 is 0.9-2.5.

For example, as shown in fig. 6, the first channel region C31 and the width-to-length ratio and the second channel region C32 may be equal.

In some examples, as shown in fig. 6, the area of a portion of the second electrode block 172 overlapping the first storage line 151 is equal to the area of a portion of the third electrode block 173 overlapping the second storage line 152. Therefore, the array substrate can better distribute the discharge capacitance of the first pixel electrode. Of course, the embodiments of the present disclosure include, but are not limited to, that the area of the portion where the second electrode block overlaps the first storage line and the area of the portion where the third electrode block overlaps the second storage line may not be the same.

In some examples, a ratio of an area of a portion of the second electrode block 172 overlapping the first storage line 151 to an area of a portion of the third electrode block 173 overlapping the second storage line 152 is 0.7-0.9.

Fig. 7 is a schematic structural diagram of a fifth array substrate according to an embodiment of the disclosure. As shown in fig. 7, the array substrate 100 further includes a discharge control line 180; the discharge control line 180 extends in a first direction; the gate G3 of the third transistor T3 is connected to a discharge control line 180, and the discharge control line 180 is positioned at a side of the first storage line 151 remote from the gate line 130. Thus, the third transistor may be turned on by the discharge control line.

In some examples, as shown in fig. 7, the first storage line 151 includes a first body portion 151A and a first extension portion 151B; the first body portion 151A extends in the first direction X; the first extension portion 151B extends from the first main body portion 151A to the discharge control line 180 in the second direction Y; an orthogonal projection of the second electrode block 172 on the first substrate 110 overlaps an orthogonal projection of the first extension 151B on the first substrate 110. Because the discharge control line is arranged on one side of the first storage line far away from the grid line, and the discharge control line is far away from the first storage line, the array substrate can conveniently enable the second electrode block and the first storage line to form a discharge capacitor by arranging the first extension part.

In some examples, as shown in fig. 7, an orthogonal projection of the discharge control line 180 on the substrate base 110 is disposed apart from an orthogonal projection of the first pixel electrode 161 on the substrate base 110. For example, the discharge control line 180 and the first storage line 161 are disposed at both sides of the center of the first pixel electrode 161, respectively.

In some examples, as shown in fig. 7, the gate G3 of the third transistor T3 is integrated with the discharge control line 180.

For example, as shown in fig. 7, the third active layer Y3 of the third transistor T3 is disposed on the discharge control line 180, and an orthogonal projection of the third active layer Y3 of the third transistor T3 on the substrate base plate 110 is located within an orthogonal projection of the discharge control line 180 on the substrate base plate 110; at this time, a portion of the discharge control line 180 overlapping the third active layer Y3 may serve as the gate electrode G3 of the third transistor T3.

For example, the third active layer Y3 of the third transistor T3 may extend below the second electrode block 172, overlapping the orthographic projection of the first extension portion 151B on the substrate base plate 110, i.e., may form a part of a discharge capacitance with the first storage line as the second electrode block.

In some examples, as shown in fig. 7, since the source S3 of the third transistor T3 needs to be connected to the first electrode block 171, the first transistor T1 and the third transistor T3 are respectively located at both sides of the first pixel electrode 161; therefore, the source S3 of the third transistor T3 needs to pass through the first pixel electrode 161.

In some examples, as shown in fig. 7, an orthographic projection of the source S3 of the third transistor T3 on the substrate 110 overlaps an orthographic projection of the first pixel electrode 161 on the substrate 110.

For example, as shown in fig. 7, the orthographic projection of the source S3 of the third transistor T3 on the substrate base 110 divides the orthographic projection of the first pixel electrode 161 on the substrate base 110 into two sub-portions arranged in the first direction X, the area ratio of the two sub-portions being 0.8-1.2. Thus, the source S3 of the third transistor T3 has a more balanced effect on the two sub-portions of the first pixel electrode 161. For example, as shown in fig. 7, the orthographic projection of the source S3 of the third transistor T3 on the substrate 110 divides the orthographic projection of the first pixel electrode 161 on the substrate 110 into two sub-portions arranged in the first direction X, the areas of the two sub-portions being substantially equal.

For example, the orthographic projection of the source S3 of the third transistor T3 on the substrate base 110 divides the orthographic projection of the first pixel electrode 161 on the substrate base 110 into two sub-portions arranged in the first direction X, and the area of the sub-portion near the drain D3 of the third transistor T3 is 1.03-1.10 times the area of the word portion near the first transistor T1, which is advantageous for providing more space for the capacitance electrode of the discharge capacitance.

Fig. 8 is a schematic structural diagram of a sixth array substrate according to an embodiment of the present disclosure. As shown in fig. 8, the array substrate 100 further includes a fourth electrode block 174; the first storage line 151 further includes a second extension portion 151C, the second extension portion 151C extending from the first main body portion 151A along the second direction discharge control line 180; an orthographic projection of the fourth electrode block 174 on the first substrate 110 overlaps with an orthographic projection of the second extension portion 151C on the first substrate 110. At this time, the fourth electrode block and the second extension portion may form a discharge capacitor.

In some examples, as shown in fig. 8, the second electrode block 172 is located at a first corner of the first pixel electrode 161, and the fourth electrode block 174 is located at a second corner of the first pixel electrode 161, so that the influence of the second electrode block and the fourth electrode block on the aperture ratio can be reduced.

In some examples, as shown in fig. 8, the area of a portion of the second electrode block 172 overlapping the first storage line 151 is equal to the area of a portion of the fourth electrode block 174 overlapping the first storage line 151. Therefore, the array substrate can better distribute the discharge capacitance of the first pixel electrode. Of course, the embodiments of the present disclosure include, but are not limited to, that the area of the portion where the second electrode block overlaps the first storage line and the area of the portion where the fourth electrode block overlaps the first storage line may not be the same.

For example, the ratio of the area of the portion of the second electrode block 172 overlapping the first storage line 151 to the area of the portion of the fourth electrode block 174 overlapping the first storage line 151 is 0.7-0.9.

As shown in fig. 8, the third transistor T3 includes a first channel region C31 and a second channel region C32, the drain D3 of the third transistor T3 includes a first drain D31 and a second drain D32, the first drain D31 is located at a side of the first channel region C31 away from the source S3, and the second drain D32 is located at a side of the second channel region C32 away from the source S3; the first drain D31 is electrically connected to the second electrode block 172, and the second drain D32 is electrically connected to the fourth electrode block 174. Thus, the third transistor T3 has higher stability.

In some examples, as shown in fig. 8, the second and fourth electrode blocks 172 and 174 have mirror symmetry with respect to a bisector of the first pixel electrode 161 extending in the second direction Y. Of course, embodiments of the present disclosure include, but are not limited to, this.

In some examples, the area of the first pixel electrode 161 is a1, the area of the portion of the second electrode block 172 overlapping the first storage line 151 is a2, the area of the portion of the fourth electrode block 174 overlapping the first storage line 151 is a4, and the ratio of the a1 to the sum of a2 and a4 is in the range of 15-40. Therefore, the first pixel electrode and the second pixel electrode have proper voltage difference, and meanwhile, the discharge capacitor has higher charge and discharge speed, and the corresponding speed of the pixel unit cannot be influenced. Therefore, the pixel unit on the array substrate has wider visual angle and higher display quality.

In some examples, as shown in fig. 8, the plurality of pixel units 120 includes a first color pixel unit 121, a second color pixel unit 122, and a third color pixel unit 123; the area range of the first pixel electrode 161 in the first color pixel unit 121 is 12000-. Therefore, the first color pixel unit has a wider visual angle and also has higher display quality.

In some examples, the area of the first pixel electrode 161 in the first color pixel unit 121 ranges from 13000-. Therefore, the first color pixel unit has a wider visual angle and also has higher display quality.

In some examples, the area of the first pixel electrode 161 in the second color pixel unit 122 ranges from 11500-. Therefore, the second color pixel unit has a wider visual angle and also has higher display quality.

In some examples, the area of the first pixel electrode 161 in the second color pixel unit 122 ranges from 13000-14000 square micrometers, and the sum of the areas of the portions of the second electrode block 172 and the fourth electrode block 174 in the second color pixel unit 122 that overlap the first storage line 151 ranges from 420-450 square micrometers. Therefore, the second color pixel unit has a wider visual angle and also has higher display quality.

In some examples, the area of the first pixel electrode 161 in the third color pixel unit 123 ranges from 11000-. Therefore, the third color pixel unit has a wider visual angle and also has higher display quality.

In some examples, the area of the first pixel electrode 161 in the third color pixel unit 123 ranges from 11000-12500 square micrometers, and the sum of the areas of the portions of the second and fourth electrode blocks 172 and 174 overlapping the first storage line 151 in the third color pixel unit 123 ranges from 350-380 square micrometers. Therefore, the third color pixel unit has a wider visual angle and also has higher display quality.

Fig. 9 is a schematic structural diagram of a seventh array substrate according to an embodiment of the disclosure. As shown in fig. 9, the first storage line 151 further includes a connection portion 151D, and the connection portion 151D connects the first extension portion 151B and the second extension portion 151C to form a loop structure with the first body portion 151A.

In some examples, as shown in fig. 9, the second electrode block 172 is located at a first corner of the first pixel electrode 161, and the fourth electrode block 174 is located at a second corner of the first pixel electrode 161, so that the influence of the second electrode block and the fourth electrode block on the aperture ratio can be reduced.

In some examples, as shown in fig. 9, since the source S3 of the third transistor T3 needs to be connected to the first electrode block 171, the first transistor T1 and the third transistor T3 are respectively located at both sides of the first pixel electrode 161; therefore, the source S3 of the third transistor T3 needs to pass through the first pixel electrode 161.

In some examples, as shown in fig. 9, an orthographic projection of the source S3 of the third transistor T3 on the substrate 110 overlaps an orthographic projection of the first pixel electrode 161 on the substrate 110.

For example, as shown in fig. 9, the orthographic projection of the source S3 of the third transistor T3 on the substrate base 110 divides the orthographic projection of the first pixel electrode 161 on the substrate base 110 into two sub-portions arranged in the first direction X, the area ratio of the two sub-portions being 0.8-1.2. Thus, the source S3 of the third transistor T3 has a more balanced effect on the two sub-portions of the first pixel electrode 161.

In some examples, as shown in fig. 9, the source S3 of the third transistor T3 is connected to the drain D1 of the first transistor T1 through the first pixel electrode 161, the source S3 of the third transistor T3 divides the first pixel electrode 161 into a first subsection 161A and a second subsection 161B, and the ratio of the area of the first subsection 161A to the area of the second subsection 161B ranges from 92% to 100%, so that the influence of the drain D1 of the first transistor T1 on the liquid crystal molecules corresponding to the first subsection 161A and the second subsection 161B can be more balanced.

In some examples, as illustrated in fig. 9, the first storage line 151 further includes a ring structure connection part 151F connecting adjacent two ring structures.

Fig. 10 is a schematic structural diagram of an eighth array substrate according to an embodiment of the present disclosure. As shown in fig. 10, the gate line 130 includes a protrusion 132, and a region where the protrusion 132 is located is configured to place a spacer PS. The plurality of pixel units 120 includes a first color pixel unit 121, a second color pixel unit 122, and a third color pixel unit 123; the first color pixel unit 121 includes the number and size of the protrusions 132 different from those of the protrusions 132 included in the second color pixel unit 122, and the second color pixel unit 122 includes the number and size of the protrusions 132 different from those of the protrusions 132 included in the third color pixel unit 123. Therefore, the array substrate can adjust the areas of the first pixel electrode and the second pixel electrode of the pixel units with different colors by adjusting the number and the size of the protruding parts in the pixel units with different colors.

In some examples, as shown in fig. 10, the ratio of the sizes of the protrusions 132 in any two of the first, second, and third

color pixel units

121, 122, and 123 is inversely proportional to the area ratio of the first pixel electrode 161. That is, the larger the area of the first pixel electrode is, the smaller the size of the protrusion in the pixel unit is.

In some examples, as shown in fig. 10, the first pixel electrode 161 is electrically connected to the drain D1 of the first transistor T1 through the via connection structure 191, and an orthographic projection of the protrusion 132 on the first substrate 110 is spaced apart from an orthographic projection of the via connection structure 191 on the first substrate 110.

In some examples, the first transistor T1 includes a first active layer Y1, the second transistor T2 includes a second active layer Y2, the third transistor T3 includes a third active layer Y3, and a material of at least one of the first active layer Y1, the second active layer Y2, and the third active layer Y3 includes Indium Gallium Zinc Oxide (IGZO).

For example, the molar ratio of each metal element in the Indium Gallium Zinc Oxide (IGZO) described above may be 1: 1: 1. of course, the embodiments of the present disclosure include, but are not limited to, the Indium Gallium Zinc Oxide (IGZO) described above may also be a high mobility material system in which the molar content of indium is greater than 35% of the molar content of all metals. In addition to the metallic materials of indium (In), gallium (Ga), and zinc (Zn), other metals or rare earth elements may be added.

Fig. 11 is a schematic structural diagram of an active layer in an array substrate according to an embodiment of the present disclosure. As shown in fig. 11, at least one of the first, second, and third active layers Y1, Y2, and Y3 includes a first semiconductor layer 210 and a second semiconductor layer 220; the second semiconductor layer 220 is located on a side of the first semiconductor layer 210 away from the first substrate 110, and the density of the second semiconductor layer 220 is greater than that of the first semiconductor layer 210. Thus, the second semiconductor layer 220 may be dense Indium Gallium Zinc Oxide (IGZO) having an etch rate difference from that of the first semiconductor layer 210.

In some examples, the material of the second semiconductor layer includes crystalline indium gallium zinc oxide, which is included in the embodiments of the present disclosure but not limited thereto. .

In some examples, as shown in fig. 11, at least one of the first, second, and third active layers Y1, Y2, and Y3 further includes a third semiconductor layer 230, the third semiconductor layer 230 being located on a side of the first semiconductor layer 210 away from the second semiconductor layer 230.

Fig. 12 is a schematic structural diagram of a ninth array substrate according to an embodiment of the present disclosure. As shown in fig. 12, each pixel unit 120 includes a first transistor T1, a second transistor T2, a first pixel electrode 161, and a second pixel electrode 162; the gate line 130 is disposed between the first pixel electrode 161 and the second pixel electrode 162; the data line 140 is disposed at one side of the first pixel electrode 161 and the second pixel electrode 162, that is, the data line 140 is disposed at the same side of the first pixel electrode 161 and the second pixel electrode 162; the gate electrode G1 of the first transistor T1 is connected to the gate line 130, the source electrode S1 of the first transistor T1 is connected to the data line 140, and the drain electrode D1 of the first transistor T1 is connected to the first pixel electrode 161, so that the first transistor T1 can apply the data voltage on the data line 140 to the first pixel electrode 161 by being driven by the gate line 130; the gate electrode G2 of the second transistor T2 is connected to the gate line 130, the source electrode S2 of the second transistor T2 is connected to the data line 140, and the drain electrode D2 of the second transistor T2 is connected to the second pixel electrode 162, so that the second transistor T2 can apply the data voltage on the data line 140 to the second pixel electrode 162 by driving the gate line 130.

As shown in fig. 12, each pixel unit 120 further includes a third transistor T3, a first electrode block 171, and a second electrode block 172, the source S3 of the third transistor T3 is connected to the first electrode block 171, the drain D1 of the first transistor T1 is connected to the first electrode block 171, the drain D3 of the third transistor T3 is connected to the second electrode block 172, and an orthographic projection of the second electrode block 172 on the first substrate 110 overlaps an orthographic projection of the first storage line 151 on the first substrate 110; the second electrode block 172 extends in the second direction Y. That is, the second electrode block 172 is a vertical electrode block.

In some examples, each pixel unit 120 further includes a third electrode block 173, and the drain D3 of the third transistor T3 is connected to the second electrode block 172 and the third electrode block 173, respectively; an orthographic projection of the second electrode block 172 on the first substrate 110 overlaps with an orthographic projection of the first storage line 151 on the first substrate 110; an orthogonal projection of the third electrode block 173 on the first substrate 110 overlaps an orthogonal projection of the second storage line 152 on the first substrate 110. Also, the third electrode block 173 also extends in the second direction Y, i.e., the second electrode block 172 is a vertical electrode block.

In some examples, as shown in fig. 12, the adjacent second electrode block 172 and third electrode block 173 are connected to form a pattern extending in the second direction Y as a whole.

Fig. 13 is a schematic structural diagram of a tenth array substrate according to an embodiment of the disclosure. As shown in fig. 13, the array substrate 100 further includes storage link lines 173 connecting the first storage lines 171 and the second storage lines 172. The orthographic projection of the storage connecting line 173 on the substrate 110, the orthographic projection of the first pixel electrode 161 on the substrate 110 and the orthographic projection of the second pixel electrode 162 on the substrate 110 are arranged at intervals, and capacitance with the pixel electrodes is avoided.

In some examples, as shown in fig. 13, the storage link line 173 is disposed at the same level as the source S1 of the first transistor T1. That is, the storage link line may be formed using a conductive layer where the source of the first transistor is located. At this time, the memory link lines 173 are disposed in different layers from the first and

second memory lines

171 and 172 so as to be connected to the first memory lines 151 through the second via connection structures 192 and to be connected to the second memory lines 152 through the third via connection structures 193.

Of course, the embodiments of the present disclosure include, but are not limited to, that the storage connection line may be made of other conductive layers, for example, the storage connection line may be disposed on the same layer as the first pixel electrode, or the storage connection line may be a conductive semiconductor layer disposed on the same layer as the first active layer of the first transistor.

In some examples, as shown in fig. 13, the plurality of pixel units 120 includes a first color pixel unit 121, a second color pixel unit 122, and a third color pixel unit 123, the first color pixel unit 121 is configured to emit red light, the second color pixel unit 122 is configured to emit green light, the third color pixel unit 123 is configured to emit blue light, and the storage connection line 173 is located within the third color pixel unit 123, thereby reducing an influence of the storage connection line on display.

In some examples, as shown in fig. 13, the distance in the first direction X between the second and third electrode blocks 172 and 173 in the third color pixel cell 123 and the first active layer Y1 of the first transistor T1 in the same pixel cell is smaller than the distance in the first direction X between the second and third electrode blocks 172 and 173 in the first color pixel cell 121 and the first active layer Y1 of the first transistor T1 in the same pixel cell. Therefore, the array substrate can enable the distance between the storage connecting line and the second electrode block or the third electrode block to be longer, and mutual influence is avoided.

In some examples, as shown in fig. 13, a distance in the first direction X between the third active layer Y3 of the third transistor T3 in the third color pixel cell 123 and the first active layer Y1 of the first transistor T1 in the same pixel cell is smaller than a distance in the first direction X between the third active layer Y3 of the third transistor T3 in the first color pixel cell 121 and the first active layer Y1 of the first transistor T1 in the same pixel cell. Therefore, the array substrate can enable the distance between the storage connecting line and the second electrode block or the third electrode block to be longer, and mutual influence is avoided.

Fig. 14 is a schematic structural diagram of an eleventh array substrate according to an embodiment of the present disclosure. As shown in fig. 14, in the array substrate, the data line 140 includes a bending part 142, and an orthogonal projection of the bending part 142 on the first substrate 110 overlaps with an orthogonal projection of the second electrode block 172 on the first substrate 110, so that parasitic capacitance between adjacent pixel units can be balanced. In the example shown in fig. 14, the data line and the second electrode block may be made of different conductive layers, and an insulating layer is disposed between the bending portion and the second electrode block.

In some examples, as shown in fig. 14, the plurality of pixel units 120 includes a first color pixel unit 121, a second color pixel unit 122, and a third color pixel unit 123; the bent portion 142 includes an upright portion 142A extending in the second direction, the distance between the upright portion 142A in the first color pixel unit 121 and the second electrode block 172 is J1, the distance between the upright portion 142A in the second color pixel unit 121 and the second electrode block 172 is J2, the distance between the upright portion 142A in the third color pixel unit 123 and the second electrode block 172 is J3, and J1, J2, and J3 are not equal. Therefore, the array substrate can better balance parasitic capacitance among pixel units of different colors.

In some examples, J1, J2, and J3 range from 3 to 12 microns, the difference between J1 and J2 ranges from 0.5 to 5 microns, and the difference between J2 and J3 ranges from 0.5 to 5 microns.

Fig. 15 is a schematic view of an array substrate according to an embodiment of the present disclosure. As shown in fig. 15, the array substrate 100 further includes a color film layer 250 disposed on a side of the first pixel electrode 161 and the second pixel electrode 162 away from the substrate 110. Therefore, the Array substrate can adopt the design of a Color film On the Array substrate (Color filter On Array), so that the Color film layer and the pixel unit have higher alignment precision.

In some examples, as shown in fig. 15, the plurality of pixel units 120 includes a first color pixel unit 121, a second color pixel unit 122, and a third color pixel unit 123; the color film layer 250 includes a first color filter 251, a second color filter 252 and a third color filter 253; the first color filter 251 is disposed corresponding to the first color pixel unit 121, the second color filter 252 is disposed corresponding to the second color pixel unit 122, and the third color filter 253 is disposed corresponding to the third color pixel unit 123.

In some examples, as shown in fig. 15, the array substrate 100 further includes a black matrix 280 between the adjacent first color filter 251 and the second color filter 252, between the adjacent second color filter 252 and the third color filter 253, and between the adjacent third color filter 253 and the first color filter 251.

An embodiment of the present disclosure also provides a display panel. Fig. 16 is a schematic structural diagram of a display panel according to an embodiment of the present disclosure. As shown in fig. 16, the display panel 400 includes the array substrate 100. Therefore, the pixel unit on the display panel comprising the array substrate has a wider visual angle and higher display quality.

In some examples, as shown in fig. 16, the display panel 400 further includes an opposite substrate 300 and a liquid crystal layer 410. The opposite substrate 300 is disposed opposite to the array substrate 100, and includes a second substrate 310 and a common electrode 320; the liquid crystal layer 410 is positioned between the array substrate 100 and the opposite substrate 300. The array substrate 100 further includes a gate insulating layer 290, the gate insulating layer 290 being positioned between the gate G1 of the first transistor T1 and the source S1 of the first transistor T1, between the gate G2 of the second transistor T2 and the source S2 of the second transistor T2, and between the gate G3 of the third transistor T3 and the source S3 of the third transistor T3.

At this time, the ratio of the thickness d1 of the liquid crystal layer to the thickness d2 of the gate insulating layer satisfies the following formula:

d1/d2=(ε1/ε2) × (A1/A2) × (W2/W1) ×(L1/L2)，

where ∈ 1 is a dielectric constant of a liquid crystal material in the liquid crystal layer, ∈ 2 is a dielectric constant of the gate insulating layer, W1 is a channel width of the first transistor, L1 is a channel length of the first transistor, W2 is a channel width of the third transistor, and L2 is a channel length of the third transistor. Therefore, the display panel can also adjust the charge and discharge amount by setting the ratio of the thickness d1 of the liquid crystal layer to the thickness of the gate insulating layer, so that the display panel has better display quality.

At this time, a ratio of the thickness d1 of the liquid crystal layer to the thickness d2 of the gate insulating layer satisfies the following formula:

d1/d2=(ε1/ε2) × A1/[A2× (W2/W1) ×(L1/L2)- Scs- Sgd],

QR1=P*QR2 (1)，

wherein P is more than 0 and less than 1.

It can be seen that the charging current Ion is proportional to the width-to-length ratio (W/L) of the channel region of the transistor, so that the change of the width-to-length ratio (W/L) will affect the charging current Ion proportionally, and since the first transistor T1 and the third transistor T3 are formed by the same process, that is, μ n, Ci, (VGS-VTH) VDS of the two transistors are almost equal.

Thus, QR1= P × QR2= [ (W1/L1)/(W2/L2) ] (t1/t2) × QR2 (3),

since t1 and t2 can be controlled by the same gate line, and the gate line on time is the same and can be approximately equal, the above formula can be simplified as:

QR1=[(W1/L1)/(W2/L2)] *QR2 (4)。

on the other hand, the charge amount QR1= Cpixel U of the pixel cell, the discharge amount QR2= C discharge capacitance U of the pixel cell; u is the driving voltage of the transistor, and since the first transistor and the third transistor can be controlled by the same gate line, U is approximately equal, so that:

cpixel = P C discharge capacitance = [ (W1/L1)/(W2/L2) ] (t1/t2) × C discharge capacitance (5)

Cpixel= Clc+Cs+Cgd (6)

Capacitance formula: c = ε S/4 π kd = V1 ε S/d (7)

Clc = epsilon 1S/4 pi kd1= K1 spoxel, Cs = K3S storage capacitance, Cgd = K4 Sgd, C discharge capacitance = K2S discharge capacitance (8)

Where Cgd denotes a parasitic capacitance between a gate electrode and a drain electrode of the transistor, Cpixel denotes a charging capacitance of the pixel cell, Clc denotes a liquid crystal capacitance, Cs denotes a storage capacitance, Spixel denotes an area of the liquid crystal capacitance, S storage capacitance denotes an area of the storage capacitance, and S discharge capacitance denotes an area of the discharge capacitance. It should be noted that Spixel can be near a line a1, and the S discharge capacitance can be approximated as a 2.

Since the parallel plate capacitance is mainly related to the dielectric constant ε between the parallel plates, and the distance d between them, K2= K3= K4, and K1/K2 = (ε 1/d 1)/((ε 2/d 2); thus, it can be found that:

A2=(A1*(K1/K2) +Scs+ Sgd )/{M*[(W1/L1)/（W2/L2)]*(t1/t2)},

where K1= epsilon 1/4 pi kd1, K2= epsilon 2/4 pi kd2, epsilon 1 is a dielectric constant of a liquid crystal material in a liquid crystal layer, epsilon 2 is a dielectric constant of a gate insulating layer, d1 is a thickness of the liquid crystal layer, d2 is a thickness of the gate insulating layer, Scs is a storage capacitance formed by the first electrode block and the first storage line, Sgd is a parasitic capacitance between a gate and a drain of the first transistor, W1 is a channel width of the first transistor, L1 is a channel length of the first transistor, W2 is a channel width of the third transistor, L2 is a channel length of the third transistor, t1 is a charging time of the pixel electrode, t2 is a charging time of the second electrode block,

m = μ 1 × C1 (VGS1-VTH1) × VDS1/μ 2 × C1 [ (VGS2-VTH2) ] VDS2, where μ 1 denotes the carrier mobility of the first transistor, μ 2 denotes the carrier mobility of the second transistor, C1 denotes the parasitic capacitance between the gate and the source in the first transistor, C2 denotes the parasitic capacitance between the gate and the source in the first transistor, VGS1 denotes the gate-source voltage of the first transistor, VGS2 denotes the gate-source voltage of the third transistor, VTH1 denotes the threshold voltage of the first transistor, VTH2 denotes the threshold voltage of the third transistor, VDS1 denotes the drain-source voltage of the first transistor, and VDS2 denotes the drain-source voltage of the second transistor.

Optionally, when Scs and/or Sgd are relatively small, d1/d2= (e 1/e 2) × (a1/a2) × (W2/W1) × (L1/L2); alternatively, when Scs and Sgd are relatively large, d1/d2= (epsilon 1/epsilon 2) × a1/[ a2 × (W2/W1) × (L1/L2) -Scs-Sgd ].

Optionally, when Clc + Cs + Cgd is relatively small, Cpixel = Cs = P × C discharge capacitance = [ (W1/L1)/(W2/L2) ] (t1/t2) × C discharge capacitance.

It can be understood that the dielectric constant, distance, etc. of the gate insulating layer of both the Cpixel and the C discharge capacitor are equal, and the ratio of A2/E is linearly related to [ (W1/L1)/(W2/L2) ]. For example: A2/E is in direct proportion to [ (W1/L1)/(W2/L2) ].

Optionally, a2/E = M × P [ (W1/L1)/(W2/L2) ].

Optionally, the ratio of a2 to E ranges from 0.18 to 0.54.

Optionally, a ratio of the width-to-length ratio of the channel region of the first transistor to the width-to-length ratio of the channel region of the third transistor ranges from 0.15 to 0.45.

Optionally, a ratio of the width-to-length ratio of the channel region of the first transistor to the width-to-length ratio of the channel region of the third transistor ranges from 0.2 to 0.35.

In some examples, as shown in fig. 16, the display panel 400 further includes a frame sealing adhesive 420, and the frame sealing adhesive 420 is disposed between the array substrate 100 and the opposite substrate 300 and surrounds the liquid crystal layer 410.

In some examples, as shown in fig. 16, the array substrate 100 further includes a passivation layer 280 between the drain electrode D1 of the first transistor T1 and the first pixel electrode 161.

For example, the gate insulating layer 290 may be silicon nitride, silicon oxide, or silicon oxynitride, and the thickness of the gate insulating layer 290 may be 2000 to 5000 angstroms.

For example, the passivation layer 280 may be the same material as the gate insulating layer 290, such as silicon nitride, silicon oxide, or silicon oxynitride.

In some examples, the second substrate 310 may be a rigid substrate or a flexible substrate.

In some examples, the second substrate 310 may be a glass substrate, a quartz substrate, a plastic substrate. Of course, embodiments of the present disclosure include, but are not limited to, substrate base plates, and other suitable base plates may also be used.

An embodiment of the present disclosure also provides a display device. Fig. 17 is a schematic diagram of a display device according to an embodiment of the disclosure. As shown in fig. 17, the display device 500 includes the display panel 400 described above. Therefore, the pixel unit on the display device comprising the display panel has a wider visual angle and higher display quality.

In some examples, the display device may be a television, a computer, a notebook computer, a tablet computer, a navigator, an electronic photo frame, a mobile phone, or other electronic products with a display function.

For the present disclosure, there are also the following points to be explained:

(1) the drawings of the embodiments of the disclosure only relate to the structures related to the embodiments of the disclosure, and other structures can refer to the common design.

(2) Without conflict, embodiments of the present disclosure and features of the embodiments may be combined with each other to arrive at new embodiments.

The above description is only a specific embodiment of the present disclosure, but the scope of the present disclosure is not limited thereto, and the scope of the present disclosure should be subject to the scope of the claims.

Claims

1. An array substrate, comprising:

a first substrate base plate;

a plurality of pixel units on the first substrate;

a gate line extending in a first direction; and

a data line extending in a second direction, the second direction intersecting the first direction;

a first storage line extending in the first direction or the second direction,

wherein at least one of the pixel cells includes a first transistor, a second transistor, a first pixel electrode, and a second pixel electrode,

a gate electrode of the first transistor is connected to the gate line, a source electrode of the first transistor is connected to the data line, a drain electrode of the first transistor is connected to the first pixel electrode, a gate electrode of the second transistor is connected to the gate line, a source electrode of the second transistor is connected to the data line, a drain electrode of the second transistor is connected to the second pixel electrode,

at least one pixel unit further comprises a third transistor, a first electrode block and a second electrode block, wherein the source electrode of the third transistor is connected with the first electrode block, the drain electrode of the first transistor is connected with the first electrode block, the drain electrode of the third transistor is connected with the second electrode block, the orthographic projection of the second electrode block on the first substrate is overlapped with the orthographic projection of the first storage line on the first substrate,

the area of the first pixel electrode is a1, the area of a portion of the second electrode block overlapping the first storage line is a2, and the ratio of a1 to a2 ranges from 15 to 40; and/or the area of the part of the first electrode block, which overlaps the first storage line, is E, and the ratio of A2 to E ranges from 0.18 to 0.54.

2. The array substrate of claim 1, wherein a ratio Z1 of the a2 to the E to a ratio Z2 of the width to length ratio of the channel region of the first transistor and the width to length ratio of the channel region of the third transistor satisfies the following equation:

Z1=F*Z2，

3. The array substrate of claim 2, wherein the ratio of the width-to-length ratio of the channel region of the first transistor to the width-to-length ratio of the channel region of the third transistor is in the range of 0.2-0.35.

4. The array substrate of claim 1, wherein the ratio of A1 to A2 is in the range of 25-30.

5. The array substrate of claim 1, wherein the first electrode block and the second electrode block are arranged in the first direction, and an orthographic projection of the first electrode block on the first substrate overlaps with an orthographic projection of the first storage line on the first substrate.

6. The array substrate of claim 1, wherein the gate line is disposed between the first pixel electrode and the second pixel electrode, and the data line is disposed at one side of the first pixel electrode and the second pixel electrode.

7. The array substrate of any one of claims 1-6, wherein the plurality of pixel cells comprises a first color pixel cell, a second color pixel cell, and a third color pixel cell,

the area range of the first pixel electrode in the first color pixel unit is 12000-.

8. The array substrate of claim 7, wherein the area of the first pixel electrode in the first color pixel unit is 13000-14000 square microns, and the area of the overlapping portion of the second electrode block and the first storage line in the first color pixel unit is 440-460 square microns.

9. The array substrate of claim 7, wherein the area of the first pixel electrode in the second color pixel unit is 11500-14500 square microns, and the area of the overlapping portion of the second electrode block and the first storage line in the second color pixel unit is 390-450 square microns.

10. The array substrate of claim 9, wherein the area of the first pixel electrode in the second color pixel unit is 13000-14000 square microns, and the area of the overlapping portion of the second electrode block and the first storage line in the second color pixel unit is 420-450 square microns.

11. The array substrate of claim 9, wherein in the first color pixel cell, a ratio of an area of the first pixel electrode to an area of a portion where the second electrode block overlaps the first storage line is in a range of B1; in the second color pixel cell, a ratio range of an area of the first pixel electrode to an area of a portion where the second electrode block overlaps the first storage line is B2; the ratio of the B1 to the B2 ranges from 0.95 to 0.99.

12. The array substrate of claim 7, wherein the area of the first pixel electrode in the third color pixel unit is 11000-13500 square microns, and the area of the overlapping portion of the second electrode block and the first storage line in the third color pixel unit is 350-400 square microns.

13. The array substrate of claim 12, wherein the area of the first pixel electrode in the third color pixel unit is in the range of 11000-12500 square microns, and the area of the overlapping portion of the second electrode block and the first storage line in the third color pixel unit is in the range of 350-380 square microns.

14. The array substrate of claim 12, wherein in the first color pixel cell, a ratio of an area of the first pixel electrode to an area of a portion where the second electrode block overlaps the first storage line is in a range of B1; in the third color pixel cell, a ratio range of an area of the first pixel electrode to an area of a portion where the second electrode block overlaps the first storage line is B3; the ratio of the B1 to the B3 ranges from 1.03 to 1.05.

15. The array substrate of any one of claims 1-6, further comprising:

a second storage line; and

a third electrode block, which is provided with a plurality of electrodes,

wherein the third electrode block is connected to a drain of the third transistor, and an orthographic projection of the third electrode block on the first substrate overlaps with an orthographic projection of the second storage line on the first substrate.

16. The array substrate of claim 15, further comprising:

a storage connection line connecting the first storage line and the second storage line,

the orthographic projection of the storage connecting line on the substrate base plate, the orthographic projection of the first pixel electrode on the substrate base plate and the orthographic projection of the second pixel electrode on the substrate base plate are arranged at intervals.

17. The array substrate of claim 16, wherein the storage connection line is disposed in the same layer as at least one of the first pixel electrode and the source electrode of the first transistor.

18. The array substrate of claim 16, wherein the storage connection line is a conductive semiconductor layer, the first transistor includes a first active layer, and the storage connection line is disposed in the same layer as the first active layer of the first transistor.

19. The array substrate of claim 16, wherein the plurality of pixel cells includes a first color pixel cell configured to emit red light, a second color pixel cell configured to emit green light, and a third color pixel cell configured to emit blue light, the storage connection line being located within the third color pixel cell.

20. The array substrate of claim 15, wherein the first storage line is positioned at a side of the gate line near a center of the first pixel electrode, and the second storage line is positioned at a side of the gate line near a center of the second pixel electrode.

21. The array substrate of claim 15, wherein an area of a portion of the second electrode block overlapping the first storage line is equal to an area of a portion of the third electrode block overlapping the second storage line.

22. The array substrate of claim 15, wherein a ratio of an area of a portion of the second electrode block overlapping the first storage line to an area of a portion of the third electrode block overlapping the second storage line is 0.7-0.9.

23. The array substrate of claim 15, wherein the third transistor comprises a first channel region and a second channel region, the drain of the third transistor comprises a first sub-drain and a second sub-drain, the first sub-drain is located on a side of the first channel region away from the source, the second sub-drain is located on a side of the second channel region away from the source,

the first sub-drain is electrically connected with the second electrode block, and the second sub-drain is electrically connected with the third electrode block.

24. The array substrate of claim 23, wherein the ratio of the width-to-length ratio of the first channel region to the width-to-length ratio of the second channel region is 0.9-2.5.

25. The array substrate of any one of claims 1-6, wherein a gate electrode of the third transistor is connected to the gate line.

26. The array substrate of any one of claims 1-6, wherein a gate electrode of the third transistor is integrated with the gate line.

27. The array substrate of any one of claims 1-6, further comprising:

a discharge control line extending in the first direction,

the grid electrode of the third transistor is connected with the discharge control line, and the discharge control line is positioned on one side, away from the grid line, of the first storage line.

28. The array substrate of claim 27, wherein the first storage line comprises:

a first body portion extending in the first direction; and

a first extension portion extending from the first main body portion in the second direction along the discharge control line,

wherein an orthographic projection of the second electrode block on the first substrate overlaps with an orthographic projection of the first extension part on the first substrate.

29. The array substrate of claim 28, further comprising:

a fourth electrode block, which is provided with a plurality of electrodes,

wherein the first storage line further includes a second extension portion extending from the first main body portion in the second direction along the discharge control line,

wherein an orthographic projection of the fourth electrode block on the first substrate overlaps with an orthographic projection of the second extension part on the first substrate,

the third transistor comprises a first channel region and a second channel region, the drain of the third transistor comprises a first drain and a second drain, the first drain is positioned on the side of the first channel region far away from the source, the second drain is positioned on the side of the second channel region far away from the source,

the first drain electrode is electrically connected with the second electrode block, and the second drain electrode is electrically connected with the fourth electrode block.

30. The array substrate of claim 29, wherein the first storage line further comprises a connection portion connecting the first extension portion and the second extension portion to form a loop structure with the first body portion.

31. The array substrate of claim 29, wherein the second electrode block is located at a first corner of the first pixel electrode, and the fourth electrode block is located at a second corner of the first pixel electrode.

32. The array substrate of claim 29, wherein a source of the third transistor is connected to a drain of the first transistor through the first pixel electrode, the source of the third transistor dividing the first pixel electrode into a first subsection and a second subsection,

the ratio of the area of the first subsection to the area of the second subsection ranges from 92% to 100%.

33. The array substrate of any one of claims 1-6, wherein the gate line comprises a protrusion, the protrusion being in a region configured to place a spacer,

the plurality of pixel cells includes a first color pixel cell, a second color pixel cell, and a third color pixel cell,

the first color pixel unit includes the number and size of the protrusions different from those of the second color pixel unit, and the second color pixel unit includes the number and size of the protrusions different from those of the third color pixel unit.

34. The array substrate of claim 33, wherein a ratio of sizes of the protrusions in any two of the first color pixel unit, the second color pixel unit, and the third color pixel unit is inversely proportional to an area ratio of the first pixel electrode.

35. The array substrate of claim 33, wherein the first pixel electrode is electrically connected to the drain of the first transistor through a via connection structure,

the orthographic projection of the protruding part on the first substrate base plate and the orthographic projection of the via hole connecting structure on the first substrate base plate are arranged at intervals.

36. The array substrate of any of claims 1-6, wherein the first transistor comprises a first active layer, the second transistor comprises a second active layer, the third transistor comprises a third active layer,

the material of at least one of the first active layer, the second active layer and the third active layer comprises indium gallium zinc oxide.

37. The array substrate of claim 36, wherein at least one of the first active layer, the second active layer, and the third active layer comprises:

a first semiconductor layer;

a second semiconductor layer located on a side of the first semiconductor layer away from the first substrate base plate,

wherein the density of the second semiconductor layer is greater than that of the first semiconductor layer.

38. The array substrate of claim 37, wherein the material of the second semiconductor layer comprises crystalline indium gallium zinc oxide.

39. The array substrate of any of claims 1-6, wherein the second electrode block extends along the second direction.

40. The array substrate according to claim 39, wherein the data line comprises a bent portion, and an orthographic projection of the bent portion on the first substrate partially overlaps with an orthographic projection of the second electrode block on the first substrate.

41. The array substrate of claim 40, wherein the plurality of pixel cells comprises a first color pixel cell, a second color pixel cell, and a third color pixel cell,

the bending part includes a vertical part extending in the second direction, a distance between the vertical part in the first color pixel unit and the second electrode block is J1, a distance between the vertical part in the second color pixel unit and the second electrode block is J2, a distance between the vertical part in the third color pixel unit and the second electrode block is J3,

the J1, the J2, and the J3 are not equal.

42. The array substrate of claim 41, wherein the values of J1, J2 and J3 range from 3 to 12 microns, the difference between J1 and J2 ranges from 0.5 to 5 microns, and the difference between J2 and J3 ranges from 0.5 to 5 microns.

43. The array substrate of any one of claims 1-6, wherein the first pixel electrode comprises a plurality of first slits and the second pixel electrode comprises a plurality of second slits.

44. A display panel comprising the array substrate according to any one of claims 1 to 43.

45. The display panel of claim 44, further comprising:

the opposite substrate is arranged opposite to the array substrate and comprises a second substrate and a common electrode;

a liquid crystal layer between the array substrate and the opposite substrate,

wherein the array substrate further comprises a gate insulating layer between the gate of the first transistor and the source of the first transistor, between the gate of the second transistor and the source of the second transistor, and between the gate of the third transistor and the source of the third transistor,

the ratio of the thickness d1 of the liquid crystal layer to the thickness d2 of the gate insulating layer satisfies the following formula:

d1/d2=(ε1/ε2) × (A1/A2) × (W2/W1) ×(L1/L2)，

46. The display panel of claim 44, further comprising:

a liquid crystal layer between the array substrate and the opposite substrate,

d1/d2=(ε1/ε2) × A1/[A2× (W2/W1) ×(L1/L2)- Scs- Sgd]，

47. The display panel of claim 45, further comprising:

the frame sealing glue is sealed by the frame sealing glue,

the liquid crystal display panel is characterized in that the frame sealing glue is arranged between the array substrate and the opposite substrate and surrounds the liquid crystal layer.

48. A display device characterized by comprising the display panel according to any one of claims 44 to 47.