CN114184829A - Output overvoltage detection circuit - Google Patents
Output overvoltage detection circuit Download PDFInfo
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- CN114184829A CN114184829A CN202111369971.XA CN202111369971A CN114184829A CN 114184829 A CN114184829 A CN 114184829A CN 202111369971 A CN202111369971 A CN 202111369971A CN 114184829 A CN114184829 A CN 114184829A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
- G01R19/16566—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533
- G01R19/16576—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533 comparing DC or AC voltage with one threshold
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
- G01R19/16504—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed
- G01R19/16523—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed using diodes, e.g. Zener diodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Measurement Of Current Or Voltage (AREA)
- Control Of Voltage And Current In General (AREA)
Abstract
The invention discloses an output overvoltage detection circuit, which comprises a high-voltage conduction circuit and a threshold detection circuit, wherein the high-voltage conduction circuit is connected with the threshold detection circuit; the input end of the high-voltage breakover circuit is connected with the detection voltage, and the output end of the high-voltage breakover circuit is connected with the threshold detection circuit; the high-voltage conduction circuit comprises a voltage stabilizing diode and a common gate circuit with source negative feedback; the high-voltage conduction circuit generates a low-voltage environment by using a voltage stabilizing diode, samples by using a common-gate circuit with source negative feedback, and outputs a comparison voltage related to the detection voltage; the threshold detection circuit comprises a positive feedback loop for setting a conduction threshold, the input end of the positive feedback loop is connected with the output end of the high-voltage conduction circuit, and the output end of the positive feedback loop outputs an overvoltage detection result after passing through two cascaded inverters. The invention adopts the positive feedback loop in the threshold detection circuit to replace a comparator, does not generate power consumption when the detection voltage is not over-voltage, and has the advantages of accurate detection result, no temperature influence, easy adjustment of over-voltage threshold and the like.
Description
Technical Field
The invention relates to the technical field of analog integrated circuits, in particular to an output overvoltage detection circuit.
Background
In a switching power supply chip such as a boost converter, an output overvoltage detection circuit is generally required to be added for overvoltage protection, however, in a conventional output overvoltage detection circuit, a large-area resistor is used for sampling an output voltage, and then a comparison result is output between the sampled voltage and a reference voltage through a comparator, which results in larger static power consumption and occupied area.
Disclosure of Invention
The invention provides an output overvoltage detection circuit; the overvoltage detection circuit can be used for detecting the output overvoltage of the output voltage above tens of volts, almost does not generate power consumption when the output voltage is low, simultaneously occupies a small area, can flexibly adjust the overvoltage detection threshold value, and can effectively solve the technical problems.
The invention is realized by the following technical scheme:
an output overvoltage detection circuit, said circuit comprising: a high voltage turn-on circuit and a threshold detection circuit;
the input end of the high-voltage breakover circuit is connected with the detection voltage, and the output end of the high-voltage breakover circuit is connected with the threshold detection circuit; the high-voltage conduction circuit comprises a voltage stabilizing diode and a common gate circuit with source negative feedback; the high-voltage conduction circuit generates a low-voltage environment by using a voltage stabilizing diode, samples by using a common-gate circuit with source negative feedback, and outputs a comparison voltage related to the detection voltage;
the threshold detection circuit comprises a positive feedback loop for setting a conduction threshold, the input end of the positive feedback loop is connected with the output end of the high-voltage conduction circuit, and the output end of the positive feedback loop outputs an overvoltage detection result after passing through two cascaded inverters.
Furthermore, the voltage stabilizing diode bears larger voltage drop, and the common-gate stage circuit with source negative feedback comprises a low-voltage PMOS (P-channel metal oxide semiconductor) tube P1 and a resistor R1; when the detection voltage is lower than the regulated voltage value of the voltage regulator diode, the power consumption of the high voltage conduction circuit and the threshold detection circuit is close to 0.
Furthermore, the positive feedback loop is formed by connecting two common source stage circuits end to end.
Furthermore, the two common-source stage circuits comprise an NMOS common-source stage circuit with a resistor load formed by an N1 tube, a resistor R2 and a resistor R4; and a PMOS common source circuit of a resistance load formed by a P2 tube, a resistor R5 and a resistor R3.
Further, when the level of the input end of the threshold detection circuit is lower than a set positive feedback loop conduction threshold, the threshold detection circuit is closed without consuming power consumption, and a high level is output; and when the level of the input end of the threshold detection circuit is higher than the set positive feedback loop conduction threshold, the threshold detection circuit is started and outputs a low level.
Furthermore, the resistance of the positive feedback loop is changed, so that the conduction threshold of the positive feedback loop can be adjusted, and the overvoltage detection threshold is further adjusted.
Furthermore, the resistor of the positive feedback loop is composed of a trap resistor and a poly resistor, the resistor of the positive feedback loop has a temperature coefficient by adjusting the proportion of the trap resistor and the poly resistor, and the temperature coefficient is equal to the temperature coefficient of the threshold voltage of the MOS tube, so that the overvoltage detection threshold is not influenced by temperature.
Advantageous effects
Compared with the traditional prior art, the output overvoltage detection circuit provided by the invention has the following beneficial effects:
(1) the high-voltage conduction circuit and the threshold detection circuit adopted by the technical scheme enable the circuit to have ultralow power consumption when the detection voltage does not reach the overvoltage detection threshold, and simultaneously avoid using a large-area divider resistor.
(2) According to the technical scheme, a trap resistor and a poly resistor are used in a positive feedback loop to realize a resistor with a specific temperature coefficient, so that the overvoltage detection threshold value is not influenced by temperature; and the overvoltage detection threshold value can be freely adjusted by changing the size of the resistor, and any overvoltage detection threshold value can be set by matching with the change of the number of the upper voltage stabilizing diodes.
(3) The technical scheme utilizes the conduction characteristic of the voltage stabilizing diode to lead most of voltage drop to fall on the voltage stabilizing diode, thereby being capable of using a low-voltage device with better performance to design a circuit and improving the performance of the circuit; and increasing the number of zener diodes can enable overvoltage detection at higher voltages.
(4) According to the technical scheme, the sensitivity of the threshold detection circuit is improved by using the positive feedback loop, so that output overvoltage detection can be carried out under the condition that a comparator is not used, the circuit structure is simplified, and the area of a device is reduced.
Drawings
FIG. 1 is a block diagram of the overall circuit of the present invention.
FIG. 2 is a schematic diagram of a specific circuit connection of an embodiment of the present invention.
FIG. 3 is a simulation of the over-voltage detection threshold for different supply voltages in the circuit of FIG. 2.
FIG. 4 is a timing simulation result of the output of the circuit of FIG. 2 as a function of the input sense voltage.
Description of reference numerals:
100. 200: output overvoltage detection circuit, 101, 201: supply voltage VDD, 105, 205: high voltage turn-on circuit, 106, 206: threshold detection circuit, 107, 207: positive feedback loop, 102, 202: detection voltage, 104, 204: comparison voltage related to the magnitude of detection voltage, 103, 203: and (5) detecting the overvoltage.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Example (b):
as shown in fig. 1-and 2, an output over-voltage detection circuit, the circuit comprising: a high voltage turn-on circuit and a threshold detection circuit. Fig. 2 is a schematic diagram of a specific structure of an output overvoltage protection circuit 200 according to the present invention, which includes a high voltage turn-on circuit 205 and a threshold detection circuit 206.
Specifically, the high voltage turn-on circuit 205 includes zener diodes D1, D2 and a common gate circuit with source degeneration. The voltage stabilizing diodes D1 and D2 are used for bearing larger voltage drop, so that a low-voltage PMOS (P-channel metal oxide semiconductor) transistor P1 can be used in a common-gate circuit with source negative feedback; meanwhile, when the detection voltage 201 is lower than the regulated value of the zener diode, the power consumption of the high voltage turn-on circuit 205 and the threshold detection circuit 206 is close to 0.
The resistor R1 and the P1 form a common-gate stage circuit with source negative feedback, so that the current of a high-voltage conducting circuit can be prevented from being increased too much, and an equivalent transconductance Gm which is less influenced by input voltage is provided:
wherein gm is transconductance of the P1 tube:
wherein the content of the first and second substances,
p-type carrier mobility of the MOS transistor, Cox is unit gate oxide capacitance of the MOS transistor,
is the width-to-length ratio of the P1 tube,
vz is the regulated voltage of the voltage regulator diode, and Vthp is the threshold voltage of the PMOS tube.
In the design, the P1 tube has a large width-to-length ratio and R1 is in the order of hundreds of k Ω
when the threshold detection circuit 206 is turned off, the comparison voltage 204 related to the magnitude of the detection voltage 201:
the voltage signal 204 is output to a threshold detection circuit 206.
In the threshold detection circuit 206, an N2 tube and a resistor R3 are used for generating hysteresis, and the output result of the simulation detection circuit jumps repeatedly; the N1 tube, the P2 tube, the resistor R2, the R4 and the R5 form a positive feedback loop 207; the threshold detection circuit 206 outputs a high level when the detection voltage is not over-voltage; when the voltage is detected to be over-voltage, a low level is output.
The positive feedback loop 207 is formed by connecting two common source stage circuits end to end, wherein the N1 tube, the resistor R2 and the resistor R4 form an NMOS common source stage circuit of a resistor load; the P2 tube, the resistor R5 and the resistor R3 form a PMOS common source circuit of the resistor load.
When the comparison voltage 204 (Vc) generated by the high voltage switch-on circuit 205 is less than the threshold voltage Vthn of the N1 transistor, the N1 transistor is turned off, and the source voltage of the N1 transistor is VDD; when the comparison voltage 204 (Vc) is larger than the threshold voltage Vthn of the N1 tube, the N1 tube is conducted. Neglecting the effect of channel length modulation, the current of the N1 tube is:
wherein the content of the first and second substances,
the mobility of n-type carriers of the MOS transistor,
the width-length ratio of the N1 tube is shown, Vc is the comparative voltage, and Vthn is the threshold voltage of the NMOS tube.
When the voltage drop of the current of the N1 tube on the resistor R4 is larger than the threshold voltage of the P2 tube, the P2 tube is conducted, and the positive feedback loop is opened:
by setting the size of the resistor R4, the P2 tube can be conducted after the N1 tube is conducted and a small detection voltage change is carried out.
Because VDD can also be used as the input of the positive feedback loop, the resistor R5 is set to be a smaller resistance value, so that the gain of the positive feedback loop is not too large, the positive feedback loop is prevented from being triggered to be opened by VDD, and the source voltage of the N1 tube is always at a low level.
After the positive feedback loop 207 is turned on, the voltage of the drain of the N1 transistor is also rapidly reduced by slightly increasing the comparison voltage 204 (Vc) under the action of positive feedback until the N1 transistor enters a deep linear region, the drain of the N1 transistor becomes low, and after the signal of the drain of the N1 transistor is shaped by two inverters, the threshold detection circuit 206 outputs low level, which indicates that the detection voltage is overvoltage.
Therefore, the overvoltage detection threshold is just conducted corresponding to the positive feedback loop, and can be obtained by combining the formula:
since, in the expression of the overvoltage detection threshold VH, Vthp, Vthn,
and Vz are both affected by temperature, so the resistor R4 is designed to be composed of a trap resistor and a poly resistor, and the proportion of the trap resistor and the poly resistor is adjusted to enable R4 to have a specific temperature coefficient, so that the overvoltage detection threshold value is not affected by temperature change. While the value of VH is theoretically independent of the supply voltage VDD.
Actually, due to the sub-threshold conduction characteristic of the mos tube, the overvoltage detection threshold VH has a certain deviation from the calculation result, and can be corrected by adjusting the value of the resistor R2. Meanwhile, for the channel length modulation effect, the channel length L of the MOS tube can be increased to reduce the channel length modulation effect, so that the value of VH is hardly influenced by the change of the power supply voltage.
When the detection voltage is not over-voltage, the output end of the threshold detection circuit 206 is at a high level, the N2 tube is conducted, and the grid voltage of the N1 tube is the voltage drop on the resistor R2; when the detection voltage is over-voltage, the output end of the threshold detection circuit 206 is at a low level, the N2 tube is closed, the grid voltage of the N1 tube is the voltage drop of the resistors R2 and R3, and hysteresis is introduced; altering the magnitude of resistor R6 may change the magnitude of the hysteresis range.
The working process of the output overvoltage detection circuit comprises the following steps:
when the detection voltage is lower than 2Vz + Vthp, all circuit branches are closed; when the voltage is higher than 2Vz + Vthp, the high-voltage conducting circuit starts to work, and other circuits are kept closed; as the voltage further increases, the current flowing through the P1 tube increases, causing the voltage 204 across the resistor R2 to increase, and when the voltage 204 increases to vthn, the N1 tube conducts. When the voltage continues to increase, the current flowing through the N1 tube also increases, and when the voltage drop across the resistor R4 increases to vthp, the P2 tube opens, and the positive feedback loop is fully opened.
After a positive feedback loop is started, when the detection voltage is increased, the grid voltage of an N1 tube is increased, the current of an N1 tube is increased, and the grid voltage of a P2 tube is reduced; further, the reduction of the gate voltage of the P2 tube increases the current of the P2 tube, and increases the gate voltage of the N1 tube; therefore, the current of the N1 tube is continuously increased by the positive feedback, the voltage drop of the resistors R4 and R5 is continuously increased, the voltage of the drain end of the N1 tube is reduced, when the voltage of the drain end of the N1 tube is reduced to enable the N1 tube to enter a linear region, the positive feedback coefficient begins to be reduced, finally, after the N1 tube enters a deep linear region, the positive feedback coefficient becomes 0, the current of the N1 tube stops increasing, the current of the P2 tube also stops increasing, and the situation that the transistor is damaged due to overlarge current cannot occur; at this time, the drain of the N1 transistor is at a low level, and the circuit outputs a low level indicating that the output voltage is over-voltage. Meanwhile, the N2 tube enters a closed state from an open state, and the resistor R3 is connected into the circuit, so that the state of the positive feedback loop is further stabilized.
When the detection voltage drops, the gate voltage of the N1 transistor begins to drop, so that the gate voltage of the P2 transistor rises, and then the current flowing through the P2 transistor decreases, further resulting in the drop of the gate voltage of the N1 transistor and the rise of the gate voltage of the P2 transistor. When the detection voltage drops to the P2 tube and is closed, the positive feedback loop is closed, the grid of the N2 becomes high level, and the circuit outputs high level to indicate that the output voltage is normal.
The invention is realized by adopting HGBCD0.35 μm technology. As shown in fig. 3, when VDD changes from 3V to 5V, the overvoltage detection threshold of the output overvoltage detection circuit changes from 17.77V to 18.04V, and has a certain power supply rejection capability. As shown in fig. 4, transient simulation shows that the high level threshold of the output over-voltage detection circuit is 18V, the low level threshold is 16.8V, and the hysteresis width is 1.2V, which can be adjusted as required.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (7)
1. An output overvoltage detection circuit, characterized by: the circuit comprises: a high voltage turn-on circuit and a threshold detection circuit;
the input end of the high-voltage breakover circuit is connected with the detection voltage, and the output end of the high-voltage breakover circuit is connected with the threshold detection circuit; the high-voltage conduction circuit comprises a voltage stabilizing diode and a common gate circuit with source negative feedback; the high-voltage conduction circuit generates a low-voltage environment by using a voltage stabilizing diode, samples by using a common-gate circuit with source negative feedback, and outputs a comparison voltage related to the detection voltage;
the threshold detection circuit comprises a positive feedback loop for setting a conduction threshold, the input end of the positive feedback loop is connected with the output end of the high-voltage conduction circuit, and the output end of the positive feedback loop outputs an overvoltage detection result after passing through two cascaded inverters.
2. The output overvoltage detection circuit of claim 1, wherein: the voltage stabilizing diode bears larger voltage drop, and the common-gate stage circuit with source negative feedback comprises a low-voltage PMOS (P-channel metal oxide semiconductor) tube P1 and a resistor R1; when the detection voltage is lower than the regulated voltage value of the voltage regulator diode, the power consumption of the high voltage conduction circuit and the threshold detection circuit is close to 0.
3. The output overvoltage detection circuit of claim 1, wherein: the positive feedback loop is formed by connecting two common source stage circuits end to end.
4. The output overvoltage detection circuit of claim 3, wherein: the two common-source stage circuits comprise an NMOS common-source stage circuit of a resistance load formed by an N1 tube, a resistor R2 and a resistor R4; and a PMOS common source circuit of a resistance load formed by a P2 tube, a resistor R5 and a resistor R3.
5. The output overvoltage detection circuit of claim 1, wherein: when the level of the input end of the threshold detection circuit is lower than a set positive feedback loop conduction threshold, the threshold detection circuit is closed without consuming power consumption, and a high level is output; and when the level of the input end of the threshold detection circuit is higher than the set positive feedback loop conduction threshold, the threshold detection circuit is started and outputs a low level.
6. The output overvoltage detection circuit of claim 1, wherein: the resistance of the positive feedback loop is changed, so that the conduction threshold of the positive feedback loop can be adjusted, and the overvoltage detection threshold is further adjusted.
7. The output overvoltage detection circuit of claim 1, wherein: the resistor of the positive feedback loop is composed of a trap resistor and a poly resistor, the resistor of the positive feedback loop has a temperature coefficient by adjusting the proportion of the trap resistor and the poly resistor, and the temperature coefficient is equal to the temperature coefficient of the threshold voltage of the MOS tube, so that the overvoltage detection threshold is not influenced by temperature.
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| CN202111369971.XA CN114184829B (en) | 2021-11-18 | 2021-11-18 | Output overvoltage detection circuit |
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| CN202111369971.XA CN114184829B (en) | 2021-11-18 | 2021-11-18 | Output overvoltage detection circuit |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0433696A2 (en) * | 1989-12-20 | 1991-06-26 | Texas Instruments Incorporated | A circuit with hysteresis for power supply voltage detection |
| US20010015661A1 (en) * | 1999-11-30 | 2001-08-23 | Stmicroelectronics S.A. | Device for the detection of a high voltage |
| CN1949668A (en) * | 2006-10-25 | 2007-04-18 | 华中科技大学 | Retarding comparator circuit of single terminal input |
| CN101013884A (en) * | 2006-11-24 | 2007-08-08 | 华中科技大学 | Unilateral hysteresis comparator |
| CN106771519A (en) * | 2016-12-14 | 2017-05-31 | 上海贝岭股份有限公司 | Voltage detection circuit |
| US20180367027A1 (en) * | 2017-06-20 | 2018-12-20 | Silergy Semiconductor Technology (Hangzhou) Ltd | Overvoltage protection circuit, integrated circuit and switching converter with the same |
| CN111521861A (en) * | 2020-04-10 | 2020-08-11 | 南开大学深圳研究院 | High-voltage detection circuit for overvoltage protection |
| CN111812388A (en) * | 2020-06-19 | 2020-10-23 | 华中科技大学 | Fixed voltage difference detection circuit |
| CN111879999A (en) * | 2020-07-31 | 2020-11-03 | 东南大学 | Low-temperature coefficient rapid voltage detection circuit |
-
2021
- 2021-11-18 CN CN202111369971.XA patent/CN114184829B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0433696A2 (en) * | 1989-12-20 | 1991-06-26 | Texas Instruments Incorporated | A circuit with hysteresis for power supply voltage detection |
| US20010015661A1 (en) * | 1999-11-30 | 2001-08-23 | Stmicroelectronics S.A. | Device for the detection of a high voltage |
| CN1949668A (en) * | 2006-10-25 | 2007-04-18 | 华中科技大学 | Retarding comparator circuit of single terminal input |
| CN101013884A (en) * | 2006-11-24 | 2007-08-08 | 华中科技大学 | Unilateral hysteresis comparator |
| CN106771519A (en) * | 2016-12-14 | 2017-05-31 | 上海贝岭股份有限公司 | Voltage detection circuit |
| US20180367027A1 (en) * | 2017-06-20 | 2018-12-20 | Silergy Semiconductor Technology (Hangzhou) Ltd | Overvoltage protection circuit, integrated circuit and switching converter with the same |
| CN111521861A (en) * | 2020-04-10 | 2020-08-11 | 南开大学深圳研究院 | High-voltage detection circuit for overvoltage protection |
| CN111812388A (en) * | 2020-06-19 | 2020-10-23 | 华中科技大学 | Fixed voltage difference detection circuit |
| CN111879999A (en) * | 2020-07-31 | 2020-11-03 | 东南大学 | Low-temperature coefficient rapid voltage detection circuit |
Non-Patent Citations (1)
| Title |
|---|
| 谢凌寒等: "宽输入共模范围电压比较器的设计", 《半导体技术》 * |
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