CN114184215A - MEMS resonant sensor based on internal resonance frequency locking - Google Patents
MEMS resonant sensor based on internal resonance frequency locking Download PDFInfo
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- 238000005859 coupling reaction Methods 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims description 45
- 239000003990 capacitor Substances 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
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- 230000009191 jumping Effects 0.000 abstract description 2
- 230000035945 sensitivity Effects 0.000 abstract description 2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/24—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
Abstract
The invention relates to an MEMS resonant sensor based on internal resonance frequency locking, which comprises a low-frequency resonator module, a high-frequency resonator module, a coupling beam module, a low-frequency excitation module and a high-frequency excitation module, wherein the low-frequency resonator module is connected with the low-frequency excitation module through a low-frequency resonance beam, and the low-frequency excitation module can generate excitation and detect the motion of the low-frequency resonance beam through a power amplifier; the high-frequency resonator module is connected with the high-frequency excitation module through the high-frequency resonant beam, and the high-frequency excitation module can generate excitation and detect the motion of the high-frequency resonant beam through the power amplifier; the coupling beam module is connected with the low-frequency resonator module and the high-frequency resonator module. According to the invention, the phenomenon of frequency coupling, unlocking and jumping of the low-frequency resonance beam and the high-frequency resonance beam is utilized, so that the resonator can be measured in a nonlinear region, the sensitivity of the resonator is improved, and the measurement range is expanded.
Description
Technical Field
The invention relates to the technical field of MEMS (Micro electro mechanical Systems), in particular to an MEMS resonant sensor based on internal resonance frequency locking.
Background
MEMS is widely applied to high and new technology industry due to the characteristics of small volume, low power consumption and high precision, and is a key technology related to national science and technology development and national defense safety. Common products include MEMS accelerometers, MEMS optical sensors, MEMS pressure sensors, MEMS humidity sensors, MEMS gas sensors, and the like. The resonant sensor is widely applied due to simple structure and wide application scene.
The resonant sensor utilizes the change of self frequency caused by the influence of external parameters on a beam in a resonant structure, and normally works near the natural frequency in a linear state, so that on one hand, the problem of small detection bandwidth exists, and on the other hand, due to a scale effect and an excitation mode, a micro-nano structure is easy to work in a nonlinear state, so that the measurement range and the measurement precision of the traditional resonant sensor are limited. Therefore, how to improve the performance of the resonant sensor by using the nonlinearity is an urgent problem to be solved.
Disclosure of Invention
In order to solve the problems, the invention provides an MEMS resonant sensor based on internal resonance frequency locking, which can realize frequency detection with large working interval and high precision.
In order to achieve the purpose, the invention adopts the following technical scheme: an MEMS resonant sensor based on internal resonance frequency locking is characterized by comprising a low-frequency resonator module, a high-frequency resonator module, a coupling beam module, a low-frequency excitation module and a high-frequency excitation module, wherein the low-frequency resonator module is connected with the low-frequency excitation module through a low-frequency resonant beam, and the low-frequency excitation module can generate excitation and detect the motion of the low-frequency resonant beam through a power amplifier; the high-frequency resonator module is connected with the high-frequency excitation module through the high-frequency resonant beam, and the high-frequency excitation module can generate excitation and detect the motion of the high-frequency resonant beam through the power amplifier; the coupling beam module is connected with the low-frequency resonator module and the high-frequency resonator module.
Furthermore, the coupling beam module is mechanically connected with the low-frequency resonance beam and the high-frequency resonance beam through the coupling beam. Energy is transferred between the low-frequency resonator and the high-frequency resonator, so that the motion states of the low-frequency resonator and the high-frequency resonator are coupled.
Further, the low-frequency excitation module comprises a first low-frequency resonator excitation module and a second low-frequency resonator excitation module, the first low-frequency resonator excitation module inputs a mixed signal of direct current and alternating current to provide an excitation force for the first excited capacitor plate of the low-frequency resonator module, and the second low-frequency resonator excitation module is externally connected with a phase-locked amplifier to detect an electric signal of the first excited capacitor plate to obtain a motion state of the low-frequency resonant beam.
The high-frequency excitation module comprises a high-frequency resonator first excitation module and a high-frequency resonator second excitation module, the high-frequency resonator first excitation module inputs a mixed signal of direct current and alternating current to provide excitation force for a second excited capacitor plate of the high-frequency resonator module, the high-frequency resonator second excitation module is externally connected with a phase-locked amplifier to detect an electric signal of the second excited capacitor plate, and the motion state of the high-frequency resonator beam is obtained.
Furthermore, the low-frequency resonator module also comprises a first fixed support anchor point and a second fixed support anchor point which are arranged on two sides of the low-frequency resonant beam; the first fixed support anchor point and the second fixed support anchor point are connected with the silicon substrate, a first metal electrode layer is uniformly sputtered on the first fixed support anchor point, and a second metal electrode layer is uniformly sputtered on the second fixed support anchor point; the first excited capacitor plate is arranged between the low-frequency resonant beam and the first excitation module and the second excitation module of the low-frequency resonator;
the high-frequency resonator module also comprises a third fixed support anchor point and a fourth fixed support anchor point which are arranged on two sides of the high-frequency resonator beam; the third fixed support anchor point and the fourth fixed support anchor point are connected with the silicon substrate, a third metal electrode layer is uniformly sputtered on the third fixed support anchor point, and a fourth metal electrode layer is uniformly sputtered on the fourth fixed support anchor point; the second excited capacitor plate is disposed between the high-frequency resonator beam and the first and second excitation modules of the high-frequency resonator.
Furthermore, the low-frequency resonator first excitation module comprises a low-frequency resonator first excitation electrode, a low-frequency resonator first excitation anchor point and a fifth metal electrode layer sputtered on the low-frequency resonator first excitation anchor point; the first excitation electrode plate of the low-frequency resonator is connected with the first excitation anchor point of the low-frequency resonator; the low-frequency resonator second excitation module comprises a low-frequency resonator second excitation electrode plate, a low-frequency resonator second excitation anchor point and a sixth metal electrode layer sputtered on the low-frequency resonator second excitation anchor point; the low-frequency resonator second excitation electrode plate is connected with a low-frequency resonator second excitation anchor point;
the high-frequency resonator first excitation module comprises a high-frequency resonator first excitation electrode, a high-frequency resonator first excitation anchor point and a seventh metal electrode layer sputtered on the high-frequency resonator first excitation anchor point; the first excitation electrode plate of the high-frequency resonator is connected with the first excitation anchor point of the high-frequency resonator; the high-frequency resonator second excitation module comprises a high-frequency resonator second excitation electrode plate, a high-frequency resonator second excitation anchor point and an eighth metal electrode layer sputtered on the high-frequency resonator second excitation anchor point; and the second excitation electrode plate of the high-frequency resonator is connected with the second excitation anchor point of the high-frequency resonator.
Furthermore, the lower parts of the low-frequency resonant beam, the first excited electrode plate of the low-frequency resonator and the second excited electrode plate of the low-frequency resonator are all hollowed out, and the low-frequency resonant beam is suspended above the silicon-based device and is supported by the first fixed support anchor point and the second fixed support anchor point; the first fixed branch anchor point, the second fixed branch anchor point, the first excitation anchor point of the low-frequency resonator and the second excitation anchor point of the low-frequency resonator are all connected with the structural substrate, the first fixed branch anchor point, the second fixed branch anchor point, the first excitation anchor point of the low-frequency resonator and the second excitation anchor point of the low-frequency resonator are all of square structures, and the side length range is 100-300 mu m;
the specific fixed support anchor point enables the low-frequency resonance beam to be suspended, and the low-frequency resonance beam can generate stable vibration under the action of electrostatic force. The excited electrode plates and the excited electrode plates on two sides of the low-frequency resonant beam form a capacitor, and when alternating current is applied, electrostatic force generated between alternating voltage and the low-frequency resonant beam drives the low-frequency resonant beam to generate stable vibration. The sensing electrode plate on the lower side of the low-frequency resonance beam transmits an electric signal of the stimulated electrode plate of the low-frequency resonance beam to the phase-locked amplifier through detection so as to obtain vibration information of the low-frequency resonance beam.
The high-frequency resonant beam, the second excited electrode plate, the first excited electrode plate of the high-frequency resonator and the second excited electrode plate of the high-frequency resonator are all hollowed out below the high-frequency resonant beam, and the high-frequency resonant beam is suspended on the silicon-based device and is supported by the third fixed support anchor point and the fourth fixed support anchor point; the third clamped anchor point, the fourth clamped anchor point, the first excitation anchor point and the second excitation anchor point are all connected with the structural substrate, the third clamped anchor point, the fourth clamped anchor point, the first excitation anchor point and the second excitation anchor point are all of square structures, and the side length of each square structure is 100-300 mu m.
Specifically, the fixed support anchor point of the high-frequency resonator module enables the high-frequency resonator beam to be suspended, so that the high-frequency resonator beam can generate stable vibration under the action of electrostatic force. The excited electrode plates and the exciting electrode plates on two sides of the high-frequency resonance beam form a capacitor, and when alternating current is applied, electrostatic force generated between alternating voltage and the high-frequency resonance beam drives the high-frequency resonance beam to generate stable vibration. The sensing electrode plate on the lower side of the high-frequency resonance beam transmits an electric signal of the excited electrode plate of the high-frequency resonance beam to the phase-locked amplifier through detection so as to obtain vibration information of the high-frequency resonance beam.
Furthermore, all the metal electrode layers are square, and the side length is 80-250 micrometers; gaps are formed among the first excited electrode plate, the first excited electrode plate of the low-frequency resonator and the second excited electrode plate of the low-frequency resonator, and form capacitors, the distance range of the gaps is 1-10 mu m, gaps are formed among the second excited electrode plate, the first excited electrode plate of the high-frequency resonator and the second excited electrode plate of the high-frequency resonator, and form capacitors, and the distance range of the gaps is 1-10 mu m.
Furthermore, the low-frequency resonance beam and the high-frequency resonance beam are single beams with two fixedly supported ends, the length range is 10-500 mu m, and the width range of the single beam is 1-10 mu m.
Further, the natural frequency of the high-frequency resonance beam is 3 times that of the low-frequency resonance beam.
According to the invention, the phenomenon of frequency coupling, unlocking and jumping of the low-frequency resonance beam and the high-frequency resonance beam is utilized, so that the resonator can be measured in a nonlinear region, the sensitivity of the resonator is improved, and the measurement range is expanded.
Drawings
Fig. 1 is a schematic structural diagram of a resonant sensor of the present invention.
FIG. 2 is an experimental schematic of the present invention.
Fig. 3 is a graph of excitation ac voltage versus vibration amplitude of a resonant beam.
In the figure: 1-1, a first metal electrode layer 1-2, a first fixed support anchor point 1-3, a low-frequency resonant beam 1-4, a first excited capacitor plate 1-5, a second metal electrode layer 1-6, a second fixed support anchor point 2-1, a third metal electrode layer 2-2, a third fixed support anchor point 2-3, a high-frequency resonant beam 2-4, a second excited capacitor plate 2-5, a fourth fixed support anchor point 2-6, a fourth metal electrode layer 3-1, a high-frequency resonator first excitation electrode 3-, a 2 high-frequency resonator first excitation anchor point 3-3, a fifth metal electrode layer 4-1, a high-frequency resonator second excitation electrode 4-2, a high-frequency resonator second excitation anchor point 4-3, a sixth metal electrode layer 5-1, a low-frequency resonator first excitation electrode 5-2, a low-frequency resonator first excitation anchor point 3-3, The low-frequency resonator comprises a first low-frequency resonator excitation anchor point 5-3, a seventh metal electrode layer 6-1, a second low-frequency resonator excitation electrode 6-2, a second low-frequency resonator excitation anchor point 6-3, an eighth metal electrode layer 7-1 and a coupling beam.
Detailed Description
In order to make the effects, technical features and advantages of the present invention clearer and easier to understand, the present invention is further described with reference to the accompanying drawings.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1 and 2, the present invention provides a resonator including two resonator modules, a coupling beam module, and four excitation modules.
The resonator module comprises a low-frequency resonator module and a high-frequency resonator module; the low-frequency resonator module is connected with the first excitation module of the low-frequency resonator and the second excitation module of the low-frequency resonator through the low-frequency resonant beams 1-3; the high-frequency resonator module is connected with the first excitation module of the high-frequency resonator and the second excitation module of the high-frequency resonator through the high-frequency resonant beam 2-3; the low-frequency resonance beam 1-3 is mechanically connected with the high-frequency resonance beam 2-3 through the coupling beam 7-1, so that the low-frequency resonance beam 1-3 is coupled with the high-frequency resonance beam 2-3 in motion state.
The low-frequency resonator module comprises a first fixed support anchor point 1-2, a second fixed support anchor point 1-6 and a first excited capacitor plate 1-4; the first fixed support anchor point 1-2 and the second fixed support anchor point 1-6 are respectively positioned at two sides of the low-frequency resonance beam 1-3 and connected with the silicon substrate, so that the low-frequency resonance beam is suspended and keeps stable vibration;
the first metal electrode layer 1-1 and the second metal electrode layer 1-5 are uniformly sputtered on the first fixed support anchor point 1-2 and the second fixed support anchor point 1-6 for inputting and outputting electrical signals.
The low-frequency resonator first excitation module comprises a low-frequency resonator first excitation electrode 5-1, a low-frequency resonator first excitation anchor point 5-2 and a seventh metal electrode layer 5-3 sputtered on the low-frequency resonator first excitation anchor point; the first excitation electrode plate 5-1 of the low-frequency resonator is connected with the first excitation anchor point 5-2 of the low-frequency resonator, the seventh metal electrode layer 5-3 is externally connected with a circuit, and a mixed signal of direct current and alternating current is input to provide excitation force for the first excited capacitor plate 1-4.
The low-frequency resonator second excitation module comprises a low-frequency resonator second excitation electrode plate 6-1, a low-frequency resonator second excitation anchor point 6-2 and an eighth metal electrode layer 6-3 sputtered on the low-frequency resonator second excitation anchor point; the second excitation electrode plate 6-1 of the low-frequency resonator is connected with the second excitation anchor point 6-2 of the low-frequency resonator, the eighth metal electrode layer 6-3 is externally connected with a phase-locked amplifier, and the electric signal of the first excited capacitor plate 1-4 is detected to obtain the motion state of the low-frequency resonant beam.
The first excitation module of the high-frequency resonator comprises a first excitation electrode 3-1 of the high-frequency resonator, a first excitation anchor point 3-2 of the high-frequency resonator and a fifth metal electrode layer 3-3 sputtered on the first excitation anchor point; the first excitation electrode plate 3-1 of the high-frequency resonator is connected with the first excitation anchor point 3-2 of the low-frequency resonator, the fifth metal electrode layer 3-3 is externally connected with a circuit, and a mixed signal of direct current and alternating current is input to provide excitation force for the first excited capacitor plate 2-4.
The high-frequency resonator second excitation module comprises a low-frequency resonator second excitation electrode plate 4-1, a high-frequency resonator second excitation anchor point 4-2 and a sixth metal electrode layer 4-3 sputtered on the high-frequency resonator second excitation anchor point; and the second excitation electrode plate 4-1 of the high-frequency resonator is connected with the second excitation anchor point 4-2 of the low-frequency resonator, the sixth metal electrode layer 4-3 is externally connected with a phase-locked amplifier, and the electric signal of the second excited capacitor plate 2-4 is detected to obtain the motion state of the high-frequency resonant beam.
The first metal electrode layer 1-1 and the second metal electrode layer 1-5 are electrified with direct current, the seventh metal electrode layer 5-3 is electrified with a mixed signal of alternating current and direct current, and the eighth metal electrode layer 6-3 is electrified with direct current, so that the low-frequency resonance beam 1-3 vibrates under the action of electrostatic force.
Direct current is conducted between the third metal electrode layer 2-1 and the fourth metal electrode layer 2-6, alternating current and direct current mixed signals are conducted between the fifth metal electrode layer 3-3, and direct current is conducted between the sixth metal electrode layer 4-3, so that the high-frequency resonance beam vibrates under the action of electrostatic force. The low-frequency resonance beam 1-3 and the high-frequency resonance beam 2-3 are mechanically connected through the coupling beam 7-1 to transmit the energy of the vibration of the low-frequency resonance beam and the high-frequency resonance beam to each other, and the motion states of the low-frequency resonance beam and the high-frequency resonance beam are mutually coupled.
Preferably, all the fixed branch anchor points and the excitation anchor points are of square structures, and the side length range of the square structures is 100-300 mu m;
preferably, all the metal electrode layers are square, and the side length is 80-250 micrometers; the distance between the excited electrode plate and the two excited electrode plates is 1-10 μm,
preferably, the low-frequency resonance beam and the high-frequency resonance beam are single beams fixedly supported at two ends, the length range is 10-500 mu m, and the width range of the single beam is 1-10 mu m.
Preferably, the natural frequency of the high-frequency resonance beam 2-3 is 3 times that of the low-frequency resonance beam 1-3, and the low-frequency resonance beam 1-3 needs to operate at a specified frequency by frequency sweeping due to the existence of the hysteresis interval of the nonlinear beam.
As shown in fig. 3, the voltage of the alternating current is fixed, and the frequency of the alternating current is gradually increased near the natural frequency of the low-frequency resonance beams 1 to 3. Due to the existence of nonlinearity, the operating frequency of the low-frequency resonance beam 1-3 gradually approaches the natural frequency and crosses the natural frequency to reach a nonlinear state, and at the moment, the high-frequency resonance beam 2-3 vibrates under the excitation action of the coupling beam. When the frequency of the alternating current reaches the natural frequency of the high-frequency resonance beam 2-3, the low-frequency resonance beam 1-3 and the high-frequency resonance beam 2-3 generate internal resonance, and the locking phenomenon of frequency and amplitude occurs at the moment, namely, the situation that the amplitude and the frequency of the low-frequency resonance beams 1-3 and the high-frequency resonance beams 2-3 are unchanged when the position A in the figure 3 is entered, the locking cannot be broken by continuously increasing the alternating current voltage and the frequency in a section of interval, the phase is changed into a saturation phase, when the voltage of the alternating current is increased to a certain value, the saturation phase is broken, the frequency and the amplitude of the two resonance beams are not locked, the amplitude of the low-frequency resonance beams 1-3 jumps greatly, and the amplitude of the low-frequency resonance beams 1-3 jumps to an independent oscillation phase, namely jumps from a state B position to a state C position in fig. 3.
Breaking amplitude and frequency "saturation" can also be achieved by changing the frequency ratio of the two beams. The high-frequency resonance beam 2-3 is used as a receptor, sensitive materials are coated on the high-frequency resonance beam 2-3, when the properties of the high-frequency resonance beam 2-3, such as quality, rigidity and the like, are influenced by external measured parameters to change, the frequency of the high-frequency resonance beam 2-3 changes, and at the moment, the frequency of the low-frequency resonance beam 1-3 and the frequency of the high-frequency resonance beam 2-3 do not become 1: 3 integral ratio, the 'saturation' state is broken, the amplitude and the frequency of the low-frequency resonance beam 1-3 jump greatly, therefore, the change of the frequency of the high-frequency resonance beam 2-3 can be known by detecting the frequency or the amplitude of the low-frequency resonance beam 1-3, and the value of the external measured parameter can be converted.
The above-mentioned contents are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereby, and any modification made on the basis of the technical idea of the present invention falls within the protection scope of the claims of the present invention.
Claims (10)
1. An MEMS resonant sensor based on internal resonance frequency locking is characterized by comprising a low-frequency resonator module, a high-frequency resonator module, a coupling beam module, a low-frequency excitation module and a high-frequency excitation module, wherein the low-frequency resonator module is connected with the low-frequency excitation module through a low-frequency resonant beam, and the low-frequency excitation module can generate excitation and detect the motion of the low-frequency resonant beam through a power amplifier; the high-frequency resonator module is connected with the high-frequency excitation module through the high-frequency resonant beam, and the high-frequency excitation module can generate excitation and detect the motion of the high-frequency resonant beam through the power amplifier; the coupling beam module is connected with the low-frequency resonator module and the high-frequency resonator module.
2. The MEMS resonant sensor based on internal resonance frequency locking of claim 1, wherein the coupling beam module mechanically connects the low frequency resonant beam and the high frequency resonant beam through the coupling beam.
3. The MEMS resonant sensor based on the internal resonance frequency locking is characterized in that the low-frequency excitation module comprises a first low-frequency resonator excitation module and a second low-frequency resonator excitation module, the first low-frequency resonator excitation module inputs a mixed signal of direct current and alternating current to provide an excitation force for a first excited capacitor plate of the low-frequency resonator excitation module, and the second low-frequency resonator excitation module is externally connected with a phase-locked amplifier to detect an electric signal of the first excited capacitor plate to obtain a motion state of the low-frequency resonant beam.
4. The MEMS resonant sensor based on the internal resonance frequency locking of claim 3, wherein the high frequency excitation module comprises a first high frequency resonator excitation module and a second high frequency resonator excitation module, the first high frequency resonator excitation module inputs a mixed signal of direct current and alternating current to provide an excitation force for a second excited capacitor plate of the high frequency resonator excitation module, and the second high frequency resonator excitation module is externally connected with a phase-locked amplifier to detect an electrical signal of the second excited capacitor plate to obtain a motion state of the high frequency resonator beam.
5. The MEMS resonant sensor based on the internal resonance frequency locking is characterized in that the low-frequency resonator module further comprises a first fixed support anchor point and a second fixed support anchor point which are arranged on two sides of the low-frequency resonant beam; the first fixed support anchor point and the second fixed support anchor point are connected with the silicon substrate, a first metal electrode layer is uniformly sputtered on the first fixed support anchor point, and a second metal electrode layer is uniformly sputtered on the second fixed support anchor point; the first excited capacitor plate is arranged between the low-frequency resonant beam and the first excitation module and the second excitation module of the low-frequency resonator;
the high-frequency resonator module also comprises a third fixed anchor point and a fourth fixed anchor point which are arranged at two sides of the high-frequency resonator beam; the third fixed support anchor point and the fourth fixed support anchor point are connected with the silicon substrate, a third metal electrode layer is uniformly sputtered on the third fixed support anchor point, and a fourth metal electrode layer is uniformly sputtered on the fourth fixed support anchor point; the second excited capacitor plate is disposed between the high-frequency resonator beam and the first and second excitation modules of the high-frequency resonator.
6. The MEMS resonant sensor based on the internal resonance frequency locking is characterized in that the low-frequency resonator first excitation module comprises a low-frequency resonator first excitation electrode, a low-frequency resonator first excitation anchor point and a fifth metal electrode layer sputtered on the low-frequency resonator first excitation anchor point; the first excitation electrode plate of the low-frequency resonator is connected with the first excitation anchor point of the low-frequency resonator; the low-frequency resonator second excitation module comprises a low-frequency resonator second excitation electrode plate, a low-frequency resonator second excitation anchor point and a sixth metal electrode layer sputtered on the low-frequency resonator second excitation anchor point; the low-frequency resonator second excitation electrode plate is connected with a low-frequency resonator second excitation anchor point;
the high-frequency resonator first excitation module comprises a high-frequency resonator first excitation electrode, a high-frequency resonator first excitation anchor point and a seventh metal electrode layer sputtered on the high-frequency resonator first excitation anchor point; the first excitation electrode plate of the high-frequency resonator is connected with the first excitation anchor point of the high-frequency resonator; the high-frequency resonator second excitation module comprises a high-frequency resonator second excitation electrode plate, a high-frequency resonator second excitation anchor point and an eighth metal electrode layer sputtered on the high-frequency resonator second excitation anchor point; and the second excitation electrode plate of the high-frequency resonator is connected with the second excitation anchor point of the high-frequency resonator.
7. The MEMS resonant sensor based on the internal resonance frequency locking is characterized in that the lower parts of the low-frequency resonant beam, the first excited electrode plate of the low-frequency resonator and the second excited electrode plate of the low-frequency resonator are hollow, the low-frequency resonant beam is suspended on the silicon-based device and is supported by the first fixed support anchor point and the second fixed support anchor point; the first fixed branch anchor point, the second fixed branch anchor point, the first excitation anchor point of the low-frequency resonator and the second excitation anchor point of the low-frequency resonator are all connected with the structural substrate, the first fixed branch anchor point, the second fixed branch anchor point, the first excitation anchor point of the low-frequency resonator and the second excitation anchor point of the low-frequency resonator are all of square structures, and the side length range is 100-300 mu m;
the high-frequency resonant beam, the second excited electrode plate, the first excited electrode plate of the high-frequency resonator and the second excited electrode plate of the high-frequency resonator are all hollowed out below the high-frequency resonant beam, and the high-frequency resonant beam is suspended on the silicon-based device and is supported by the third fixed support anchor point and the fourth fixed support anchor point; the third clamped anchor point, the fourth clamped anchor point, the first excitation anchor point and the second excitation anchor point are all connected with the structural substrate, the third clamped anchor point, the fourth clamped anchor point, the first excitation anchor point and the second excitation anchor point are all of square structures, and the side length of each square structure is 100-300 mu m.
8. The MEMS resonant sensor based on the internal resonance frequency locking of claim 7, wherein all the metal electrode layers are square, and the side length is 80-250 μm; gaps are formed among the first excited electrode plate, the first excited electrode plate of the low-frequency resonator and the second excited electrode plate of the low-frequency resonator, and form capacitors, the distance range of the gaps is 1-10 mu m, gaps are formed among the second excited electrode plate, the first excited electrode plate of the high-frequency resonator and the second excited electrode plate of the high-frequency resonator, and form capacitors, and the distance range of the gaps is 1-10 mu m.
9. The MEMS resonant sensor based on internal resonance frequency locking of claim 8, wherein the low frequency resonant beam and the high frequency resonant beam are single beams with fixed ends at both ends, the length range is 10-500 μm, and the width range of the single beam is 1-10 μm.
10. An internal resonance frequency locking based MEMS resonant sensor as claimed in claim 1, wherein the natural frequency of the high frequency resonant beam is 3 times higher than that of the low frequency resonant beam.
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Citations (7)
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