CN114172487B - MEMS resonator and preparation method thereof - Google Patents
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- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
- H03H3/0076—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks for obtaining desired frequency or temperature coefficients
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03H9/02244—Details of microelectro-mechanical resonators
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- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
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Abstract
The invention discloses an MEMS resonator and a preparation method thereof.A piezoresistive transducer which is formed by combining a direct current bias, a T-shaped anchor structure and a piezoresistive beam is adopted, so that the piezoresistive transducer has the advantage of low anchor loss, and meanwhile, the piezoresistive beam used for piezoresistive transduction does not serve as a support function, and the piezoresistive transduction efficiency can be improved by reducing the width of the piezoresistive beam; the transverse beam of the T-shaped anchor structure is connected with the two negative electrodes and is communicated with the positive electrode through the piezoresistive beam, so that bias current in the piezoresistive transducer arranged on the resonator cannot flow through the resonator, the temperature rise of the resonator caused by the joule heat effect is prevented, the elastic coefficient change of the resonator caused by the temperature rise is avoided, and the deviation degree of the resonant frequency is relieved; meanwhile, the bias current can not flow through the resonator, so that the length of a current path is shorter, the total power consumption is further reduced, and the method can be widely applied to the technical field of microelectronics.
Description
Technical Field
The invention relates to the technical field of microelectronics, in particular to an MEMS resonator and a preparation method thereof.
Background
With the rapid development of the wireless communication field, clock and frequency control are becoming popular research directions. Quartz resonators dominate the clock and frequency control market for over half a century by virtue of excellent temperature stability and phase noise characteristics. However, as the demand for miniaturization and integration increases, the disadvantages of quartz resonators, such as being bulky and incompatible with integrated circuit processes, become more prominent.
Micro Electro Mechanical Systems (MEMS) is a technology which has been rapidly developed in recent years, and has been widely applied to various physical fields (including Mechanical, electrical, thermal, chemical, and magnetic fields). Any device that contains a component or structure (movable or fixed) that is fabricated by a micromachining process is commonly referred to as a MEMS device. MEMS resonators manufactured by adopting a specific micro-nano process can be reduced to a micron size and are compatible with an integrated circuit process, and the MEMS resonators show a trend of being dominant in the clock and frequency control market instead of quartz resonators. The MEMS resonator is a core sensitive unit of the resonant MEMS sensor, and the sensitivity and the resolution of the MEMS sensor are further improved by the characteristic of high Q value of the silicon-based MEMS resonator. However, MEMS resonators also face a number of challenges, including low energy storage due to miniaturization, and high oscillator dynamic resistance due to low efficiency of conventional transducers. The prior art generally adopts the following schemes to respectively deal with the problems: (1) a bulk mode MEMS resonator is used instead of the conventional bending mode MEMS resonator. Compared with a bending mode MEMS resonator, a bulk mode MEMS resonator, particularly a square mode resonator, has higher equivalent stiffness, so that the energy storage capacity is far higher than that of the bending mode MEMS resonator; (2) the piezoresistive transducer is adopted to replace the traditional capacitance transducer to output a sensing signal. Piezoresistive transduction refers to the change in carrier mobility, and ultimately the resistance, of a semiconductor when subjected to stress. For a MEMS resonator, the piezoresistive effect can convert the vibration of the resonator into a periodic resistance change, and an ac electrical signal is output under dc bias. The dynamic resistance of the resonator obtained by piezoresistive sensing is typically more than an order of magnitude lower than that of capacitive sensing and decreases further with increasing dc bias.
For square-body mode MEMS resonators, T-shaped anchors are typically used to support the resonator in order to reduce anchor losses. Subsequent research finds that the T-shaped anchor can be used as a piezoresistive transducer to be applied to a square-shaped mode resonator besides the supporting function. However, in the current square bulk mode resonator, only the square expansion mode has been reported to apply the T-type piezoresistive transducer, and other modes such as the square lame mode and the square shear mode do not have suitable piezoresistive transducers. Secondly, although the T-type piezoresistive transducer has an improved transduction efficiency compared to the electrostatic transducer, it is difficult to further improve the transduction efficiency because the structure also has a supporting function and a certain width is required.
Disclosure of Invention
To solve the above technical problem, an embodiment of the present invention aims to: an MEMS resonator and a method of fabricating the same are provided.
On the one hand, the technical scheme adopted by the embodiment of the invention is as follows:
the utility model provides a MEMS resonator, includes syntony body and piezoresistive transducer, the syntony body is square plate structure, be provided with four on the syntony body the piezoresistive transducer, the piezoresistive transducer includes direct current biasing, first anchor structure and piezoresistive roof beam, direct current biasing includes positive electrode and two negative electrodes, first anchor structure is T type anchor structure, first anchor structure includes crossbeam and connecting rod, the one end of connecting rod with the crossbeam is connected perpendicularly, the crossbeam is connected two negative electrodes, the other end of connecting rod with the syntony body is connected, the one end of piezoresistive roof beam with the crossbeam is connected, the other end and the positive electrode of piezoresistive roof beam are connected.
Optionally, the resonator body, the first anchor structure and the piezoresistive beam are fabricated using doped monocrystalline silicon.
Optionally, when the doped monocrystalline silicon is p-type doped, the extension and contraction direction of the piezoresistive beam is along a <110> direction; when the doped monocrystalline silicon is doped in an n-type mode, the stretching direction of the piezoresistive beams is along a <100> direction.
Optionally, the MEMS resonator of the present invention further comprises an excitation capacitive transducer.
Further, the excitation capacitive transducer includes an excitation electrode disposed around the resonator body and an excitation slot formed between the excitation electrode and the resonator body.
Further, the piezoresistive transducer is suitable for a square telescopic mode resonator, a square Lame mode resonator and a square shear mode resonator.
Optionally, when the piezoresistive transducer is applied to a square extensional mode resonator, four piezoresistive transducers are respectively arranged at four corners of the resonator body, and four excitation electrodes are respectively parallel to four sides of the resonator body and form four excitation slots.
Optionally, when the piezoresistive transducer is applied to a square lamelliform mode resonator, four piezoresistive transducers are respectively arranged at the middle points of four sides of the resonator body, the excitation electrodes are arranged at two sides of each piezoresistive transducer, and the excitation electrodes are parallel to the sides of the resonator body and form the excitation slot.
Alternatively, when the piezoresistive transducer is applied to a square shear mode resonator, the four piezoresistive transducers are arranged at four corners of the resonator body, respectively, the excitation electrodes are arranged at both sides of each of the piezoresistive resonators, and the excitation electrodes are parallel to the sides of the resonator body and form the excitation slot.
The technical scheme adopted by the embodiment of the invention on the other hand is as follows:
a method of making a MEMS resonator, comprising:
carrying out ion implantation on an SOI (silicon on insulator), wherein the SOI comprises bottom silicon, a buried oxide layer and top silicon;
preparing a metal electrode on the SOI;
etching the top silicon layer;
etching the bottom silicon;
and releasing the oxygen burying layer.
Compared with the prior art, the invention has the following beneficial effects:
the MEMS resonator adopts the piezoresistive transducer which is formed by combining the direct current bias, the T-shaped anchor structure and the piezoresistive beam, has the advantage of low anchor loss, simultaneously enables the piezoresistive beam used for piezoresistive transduction not to be used as a support function, and can improve the piezoresistive transduction efficiency by reducing the width of the piezoresistive beam; the transverse beam of the T-shaped anchor structure is connected with the two negative electrodes and is communicated with the positive electrode through the piezoresistive beam, so that bias current in the piezoresistive transducer arranged on the resonator cannot flow through the resonator, the temperature rise of the resonator caused by the joule heat effect is prevented, the elastic coefficient change of the resonator caused by the temperature rise is avoided, and the deviation degree of the resonant frequency is relieved; meanwhile, the bias current cannot flow through the resonator, so that the length of a current path is shorter, and the total power consumption is further reduced.
According to the preparation method of the MEMS resonator, the MEMS resonator is obtained by performing ion implantation on the SOI, preparing the metal electrode on the SOI, etching the top layer silicon and the bottom layer silicon and releasing the buried oxide layer, and local high-concentration doping is realized by adopting the ion implantation. The structure part of the resonator is not doped, so that the crystal lattice of the resonator is not damaged, a high Q value and a high voltage resistance coefficient are obtained, the nonlinear influence is reduced, and the purpose of ensuring the power capacity of the resonator and further ensuring the phase noise of the oscillator is achieved; the dc biased electrode portion is highly doped to form a good ohmic contact and further reduce resistivity.
Drawings
FIG. 1 is a schematic cross-sectional view of a MEMS resonator according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a piezoresistive transducer structure of a MEMS resonator according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of the structure and the excitation mode of the MEMS resonator according to the embodiment of the present invention in the square expansion mode;
FIG. 4 is a schematic diagram illustrating a sensing mode and a mode of a square expansion mode of a MEMS resonator according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of the structure and excitation mode of the MEMS resonator according to the embodiment of the present invention in the square Lame mode;
FIG. 6 is a schematic diagram of the sensing mode and mode of the square Lame mode of the MEMS resonator according to the embodiment of the present invention;
FIG. 7 is a schematic diagram of the structure and excitation mode of a MEMS resonator according to an embodiment of the present invention in the square shear mode;
FIG. 8 is a schematic diagram of the sensing mode and mode of the MEMS resonator according to the present invention in the square shear mode;
FIG. 9 is a flow chart of a method for fabricating a MEMS resonator according to an embodiment of the present invention;
FIG. 10 is a schematic diagram of the structure and current path of a MEMS piezoresistive resonator including a conventional T-shaped piezoresistive transducer;
FIG. 11 is a schematic diagram of the temperature distribution and isotherm of a MEMS piezoresistive resonator containing a conventional T-shaped piezoresistive transducer when 1mA of direct current is applied;
FIG. 12 is a schematic diagram of the temperature distribution and isotherm of the MEMS resonator of the embodiment of the invention when a direct current of 1mA is applied;
FIG. 13 is a plot of the resonance frequency versus DC bias for a square extensional mode MEMS piezoresistive resonator comprising a conventional T-shaped piezoresistive transducer and a square extensional mode MEMS piezoresistive resonator comprising a piezoresistive transducer according to the present invention;
FIG. 14 is a graph comparing the resonant frequency of a square Lame mode MEMS piezoresistive resonator including a conventional T-shaped piezoresistive transducer with a square Lame mode MEMS piezoresistive resonator including a piezoresistive transducer according to the present invention with DC bias;
FIG. 15 is a plot of the resonance frequency versus DC bias for a square shear mode MEMS piezoresistive resonator comprising a conventional T-shaped piezoresistive transducer and a square shear mode MEMS piezoresistive resonator comprising a piezoresistive transducer according to the present invention;
figure 16 is a graph comparing the output voltage amplitude at different piezoresistive beam widths for a square piezoresistive modal MEMS piezoresistive resonator including a conventional T-type piezoresistive transducer and a square piezoresistive modal MEMS piezoresistive resonator including a piezoresistive transducer described herein;
FIG. 17 is a graph comparing the output voltage amplitudes of a square Lame mode MEMS piezoresistive resonator comprising a conventional T-shaped piezoresistive transducer with a square Lame mode MEMS piezoresistive resonator comprising a piezoresistive transducer according to the present invention at different piezoresistive beam widths;
figure 18 is a graph comparing the output voltage amplitude at different piezoresistive beam widths for a square shear mode MEMS piezoresistive resonator including a conventional T-type piezoresistive transducer and a square shear mode MEMS piezoresistive resonator including a piezoresistive transducer described herein;
figure 19 is a schematic diagram of the ratio of figures of merit of square piezoresistive modal MEMS piezoresistive resonators containing piezoresistive transducers described herein under piezoresistive beams of different widths to square piezoresistive modal MEMS piezoresistive resonators containing conventional T-type piezoresistive transducers;
figure 20 is a schematic diagram of the figure-of-merit ratio of a square lame mode MEMS piezoresistive resonator containing the piezoresistive transducer described herein to a square lame mode MEMS piezoresistive resonator containing a conventional T-shaped piezoresistive transducer under piezoresistive beams of different widths;
figure 21 is a schematic diagram of the ratio of figures of merit of square shear mode MEMS piezoresistive resonators containing piezoresistive transducers described herein under different width piezoresistive beams versus square shear mode MEMS piezoresistive resonators containing conventional T-type piezoresistive transducers.
Reference numerals: 101. a resonator body; 102. a first anchor structure; 103. a piezoresistive beam; 104. a positive electrode; 105. a negative electrode; 201. a cross beam; 202. a connecting rod; 301. an excitation electrode; 302. an excitation slot; 901. bottom layer silicon; 902. an oxygen burying layer; 903. top layer silicon; 904. a metal electrode; 905. a back cavity.
Detailed Description
In order to make the technical solutions better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only partial embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The terms "first," "second," "third," and "fourth," etc. in the description and claims of this application and in the accompanying drawings are used for distinguishing between different elements and not for describing a particular sequential order. Furthermore, the terms "include" and "have," as well as any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those steps or elements but may alternatively include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.
In order to solve the problems of low energy storage caused by miniaturization of the MEMS resonator and high dynamic resistance of the oscillator caused by low efficiency of the conventional transducer, the prior art generally adopts a bulk mode MEMS resonator instead of the conventional bending mode MEMS resonator and adopts a piezoresistive transducer instead of the conventional capacitive transducer to output a sensing signal. For the square-body mode MEMS resonator, in order to reduce the anchor loss, a T-shaped anchor is usually used to support the resonator. Subsequent research finds that the T-shaped anchor can be used as a piezoresistance transducer to be applied to a square mode resonator besides the supporting function. However, in the modes of the square mode resonator, only the square telescopic mode has been reported to apply the T-shaped piezoresistive transducer, and other modes such as the square lame mode and the square shear mode have no suitable piezoresistive transducer. Secondly, although the T-type piezoresistive transducer has an improved transduction efficiency compared to the electrostatic transducer, it is difficult to further improve the transduction efficiency because the structure also plays a supporting role and a certain width needs to be ensured.
Therefore, the embodiment of the invention provides an MEMS resonator, which adopts a piezoresistive transducer combined by a direct current bias, a T-shaped anchor structure and a piezoresistive beam, has the advantage of low anchor loss, simultaneously enables the piezoresistive beam used for piezoresistive transduction not to be used as a support function, and can improve the piezoresistive transduction efficiency by reducing the width of the piezoresistive beam; the transverse beam of the T-shaped anchor structure is connected with the two negative electrodes and is communicated with the positive electrode through the piezoresistive beam, so that bias current in the piezoresistive transducer arranged on the resonator cannot flow through the resonator, the temperature rise of the resonator caused by the joule heat effect is prevented, the elastic coefficient change of the resonator caused by the temperature rise is avoided, and the deviation degree of the resonant frequency is relieved; meanwhile, the bias current can not flow through the resonator, so that the length of a current path is shorter, and the total power consumption is further reduced. In addition, according to the preparation method of the MEMS resonator provided by the embodiment of the invention, the MEMS resonator is obtained by performing ion implantation on the SOI, preparing the metal electrode on the SOI, etching the top layer silicon and the bottom layer silicon and releasing the buried oxide layer, and local high-concentration doping is realized by adopting the ion implantation. The structure part of the resonator is not doped, so that the crystal lattice of the resonator is not damaged, a high Q value and a high voltage resistance coefficient are obtained, the nonlinear influence is reduced, and the purpose of ensuring the power capacity of the resonator and further ensuring the phase noise of the oscillator is achieved; the dc biased electrode portion is highly doped to form a good ohmic contact and further reduce resistivity.
Referring to fig. 1 and 2, an embodiment of the present invention provides a MEMS resonator, including a resonator body 101 and piezoresistive transducers, where the resonator body 101 is a square plate structure, four piezoresistive transducers are disposed on the resonator body 101, the piezoresistive transducers include a dc bias, a first anchor structure 102, and a piezoresistive beam 103, the dc bias includes a positive electrode 104 and two negative electrodes 105, the first anchor structure 102 is a T-shaped anchor structure, the first anchor structure 102 includes a beam 201 and a rod 202, one end of the rod 202 is perpendicularly connected to the beam 201, the beam 201 connects the two negative electrodes 105, the other end of the rod 202 is connected to the resonator body 101, one end of the piezoresistive beam 103 is connected to the beam 201, and the other end of the piezoresistive beam 103 is connected to the positive electrode 104.
In this case, the resonator body 101 generates modal displacement (vibration) under external excitation.
The first anchor structure 102, which is a T-shaped anchor structure, is used to support the resonator body 101 on the two negative electrodes 105. Specifically, the first anchor structure 102 includes a cross beam 201 and a connecting rod 202, the cross beam 201 is a part of a bias current path, and is used for guiding a bias current flowing out from the piezoresistive beam 103 to the negative electrode 105, so that the bias current is prevented from flowing through the resonator body 101, the temperature rise of the resonator body caused by joule heat effect is prevented, the elastic coefficient change of the resonator body caused by the temperature rise is avoided, and the deviation degree of the resonant frequency is relieved; meanwhile, the bias current can not flow through the resonator, so that the length of a current path is shorter, and the total power consumption is further reduced; in addition, the beam 201 can be used as an acoustic wave reflection structure, which prevents the acoustic wave of the resonator body 101 from leaking into the substrate to a certain extent, reduces the anchor loss and improves the overall Q value of the MEMS resonator.
The piezoresistive beam 103, which is the core structure of the piezoresistive transducer, is used to convert the vibration of the resonator into a periodic resistance change. The piezoresistive transduction efficiency can be controlled by adjusting the thickness of the piezoresistive beam 103, and in particular, the thinner the piezoresistive beam 103, the higher the piezoresistive transduction efficiency. In the embodiment of the present invention, it can be understood that the output signal amplitude is improved by thinning the piezoresistive beam 103, but considering that the piezoresistive beam 103 that is too thin is not easy to process and is easily damaged in impact, a design compromise is required.
As an alternative embodiment, the resonator body 101, the first anchor structure 102 and the piezoresistive beam 103 are fabricated using doped single crystal silicon. When the doped monocrystalline silicon is doped in a p type, the stretching direction of the piezoresistive beam is along a <110> direction; when the doped monocrystalline silicon is doped in an n-type mode, the stretching direction of the piezoresistive beams is along a <100> direction.
Referring to fig. 3, as an alternative embodiment, a MEMS resonator of the present invention further comprises an excitation capacitive transducer.
Wherein the excited capacitive transducer is used to drive the resonator body 101, controlling the mode in which the resonator body 101 vibrates.
As an alternative embodiment, the excitation capacitive transducer comprises an excitation electrode 301 and an excitation slot 302, the excitation electrode 301 being arranged around the resonator body 101, the excitation slot 302 being formed between the excitation electrode 301 and the resonator body 101.
Wherein the excitation electrode 301, comprising top layer silicon and metal on silicon, is used for electrical interfacing with external instruments for applying excitation to the resonator body 101. Specifically, the excitation electrode 301 is connected to an external instrument by gold wire bonding or a probe.
And the excitation slot 302, together with the resonator body 101 and the excitation electrode 301, forms a plate capacitor structure for converting an alternating voltage on the excitation electrode 301 into an alternating electrostatic force, thereby realizing the driving of the resonator body 101.
As an alternative embodiment, the piezoresistive transducer is suitable for various square bulk mode MEMS resonators, including square extensional mode resonators, square lamelliform mode resonators and square shear mode resonators.
Referring to fig. 3 and 4, as an alternative embodiment, when the piezoresistive transducer is applied to a square extensional mode resonator, four piezoresistive transducers are respectively arranged at four corners of the resonator body 101, and four excitation electrodes 301 are respectively parallel to four sides of the resonator body 101 and form four excitation slots 302.
The four excitation electrodes 301 are connected to a network analyzer, and the network analyzer supplies in-phase alternating-current excitation signals to the four excitation electrodes 301. The excitation signal is used for exciting the capacitive transducer to generate four in-phase alternating forces to act on the resonant body 101, and the mode of the resonant body 101 during vibration is controlled to be a square telescopic mode. As shown in fig. 4, in the square expansion mode, displacements of the resonator body 101 at various positions are in phase, and alternating resistances due to piezoresistive effects are also in phase. It can be understood that the output signal is obtained by superposing the sensing signals of the four piezoresistive transducers, so that the maximization of the output signal is realized.
Referring to fig. 5 and 6, as an alternative embodiment, when the piezoresistive transducer is applied to a square lamelliform mode resonator, four piezoresistive transducers are respectively disposed at the middle points of four sides of the resonator body 101, the excitation electrode 301 is disposed at two sides of each piezoresistive transducer, and the excitation electrode 301 is parallel to the sides of the resonator body 101 and forms the excitation slot 302.
In one embodiment of the invention, anchor structures are provided as supports at each of the four corners of the resonator body 101.
The eight excitation electrodes 301 are connected to a network analyzer through a differential balun, the network analyzer applies different-phase ac excitation signals to the eight excitation electrodes 301, and the phase relationship of the excitation signals on each excitation electrode 301 is shown in fig. 5. Referring to fig. 6, the displacement is greatest at the midpoints of the four sides of the resonator body 101 in the lame mode, and thus placing a piezoresistive transducer at the midpoints of the four sides of the resonator body 101 can produce the strongest piezoresistive effect. The mid-points of non-adjacent sides of the resonator body 101 are grouped, i.e. the points of maximum displacement are divided into two groups. Since the displacements of the two maximum displacement points of the same group are in the same phase in the mode, the displacements of the maximum displacement points of different groups have a phase difference of 180 degrees, and thus two groups of opposite-phase sensing signals are formed. It can be understood that, two sets of output signals with the same phase are synthesized respectively to form two output signals with opposite phases, and then the two output signals with opposite phases are differentially synthesized by the combiner to obtain the output signal, so as to maximize the output signal.
Referring to fig. 7 and 8, as an alternative embodiment, when the piezoresistive transducer is applied to a square shear mode resonator, the four piezoresistive transducers are respectively disposed at the four corners of the resonator body 101, the excitation electrodes 301 are disposed at both sides of each piezoresistive transducer, and the excitation electrodes 301 are parallel to the sides of the resonator body 101 and form the excitation slots 302.
In one embodiment of the invention, an anchor structure is provided as a support at the mid-points of the four sides of the resonator body 101, respectively.
The eight excitation electrodes 301 are connected to a network analyzer through a differential balun, the network analyzer applies ac excitation signals of different phases to the eight excitation electrodes 301, and the phase relationship of the excitation signals on each excitation electrode 301 is shown in fig. 7. Referring to figure 8, the displacement of the four corners of the resonator body 101 is greatest in the square shear mode, so placing piezoresistive transducers at the four corners of the resonator body 101 produces the strongest piezoresistive effect. The diagonal corners of the resonator body 101 are grouped, i.e. the points of maximum displacement are divided into two groups. Since the displacements of the two maximum displacement points of the same group are in the same phase in the mode, the displacements of the maximum displacement points of different groups have a phase difference of 180 degrees, and thus two groups of opposite-phase sensing signals are formed. It can be understood that, two sets of output signals with the same phase are synthesized respectively to form two output signals with opposite phases, and then the two output signals with opposite phases are differentially synthesized by the combiner to obtain the output signal, so as to maximize the output signal.
Based on the MEMS resonator of fig. 1, an embodiment of the present invention provides a method for manufacturing a MEMS resonator, as shown in fig. 9, the method includes the following steps S201 to S205:
s201, carrying out ion implantation on an SOI (silicon on insulator), wherein the SOI comprises bottom silicon 901, a buried oxide layer 902 and top silicon 903;
among them, in order to form an ohmic contact and make contact resistance sufficiently low, it is necessary to control the dose of ion implantation.
Specifically, in the embodiment of the present invention, a layer of photoresist is coated on the top silicon 903 and is subjected to photolithography through a mask to form a mask layer, and the top silicon 903 is selectively doped by ion implantation. In one embodiment of the invention, the ion implantation for n-type doping is performed at a dose of more than 2 x 10 15 ion/cm 2 The dosage of the ion implantation in the p-type doping is more than 2 x 10 15 ion/cm 2 And (3) boron.
The ion implantation was performed with the ion implantation energy set low (about 40eV) and the implantation angle set at 7 °. After activation at 1050 ℃ for 90s, the sheet resistance of P-type silicon was measured to be below 63 Ω/□ and the sheet resistance of N-type silicon was measured to be below 43 Ω/□.
By ion implantation, impurity ions are introduced into the top layer silicon 903 to form highly doped top layer silicon 903, and the size of contact resistance after the metal and the substrate form ohmic contact is further reduced. Compared with the traditional thermal diffusion doping, the ion implantation technology has more accurate control on the doping depth and dosage, the temperature during ion implantation is close to the normal temperature, and photoresist can be adopted as a mask to realize selective doping. Ohmic contact of low contact resistance can be realized through selective doping, the piezoresistive beam can be kept at lower doping concentration, and the piezoresistive coefficient reduction caused by high doping concentration is avoided; the selective doping prevents the crystal lattice of the resonator structure from being damaged by ion implantation, thereby ensuring a high Q value. And thirdly, the selective doping can avoid the increase of the nonlinear degree of the material caused by high doping concentration, reduce the power capacity of the MEMS resonator and avoid the phase noise deterioration of the MEMS oscillator.
S203, preparing a metal electrode 904 on the SOI;
specifically, a double-layer glue process is adopted, a layer of LOR10 photoresist is coated on the top layer silicon, prebaking is carried out at the temperature of 140 ℃ for 150s, a layer of Az5214 photoresist is coated on the LOR10 photoresist, prebaking is carried out at the temperature of 95 ℃ for 90s, and double-layer glue is formed.
And exposing and developing the LOR10 photoresist and the Az5214 photoresist, obtaining a pattern area required by metal deposition through the photoetching technology of exposure and development, and depositing a metal layer on the photoresist after exposure and development by adopting electron beam evaporation.
The metal layer is selected by considering whether the metal is compatible with a subsequent preparation process.
Specifically, titanium aluminum can form a better alloy with silicon at a lower annealing temperature, but gaseous hydrofluoric acid during the subsequent release of the buried oxide layer 902 (step S206) can corrode the metallic aluminum, resulting in damage to the device structure. Therefore, in general, the metal layer is made of titanium gold or chromium gold. And depositing 20nm chromium and 200nm gold or 20nm titanium and 200nm gold by electron beam evaporation. Wherein the ohmic contact condition formed by the titanium and the silicon is 450-550 ℃ for 10 min; the ohmic contact condition between the chrome gold and the silicon is 800-850 ℃ for 5 min. In an embodiment of the present invention, the metal layer is chrome gold, which forms an ohmic contact with the top silicon 903.
In the embodiment of the invention, the metal layer is annealed at 800-850 ℃ for 5min, so that the metal layer and the highly doped top silicon 903 form ohmic contact, and the resistance of the contact surface is much smaller than that of the top silicon 903, so that the current-voltage characteristics of the device are not affected by the contact resistance.
Finally, the metal electrode 904 is obtained by peeling off using photoresist.
S204, etching the top silicon 903;
firstly, a layer of photoresist is coated on the top silicon 903, photoetching is carried out through a mask, the photoresist on the top silicon 903 is exposed and developed, a mask layer covering a device area on the top silicon 903 is obtained, and etching of a local area of the top silicon 903 is achieved.
And etching the area, which is not covered by the photoresist, on the top silicon 903 by adopting deep reactive ion etching to form an etching cavity of the top silicon 903, and protecting the side wall of the etching cavity of the top silicon 903 by adopting passivation circulation.
S205, etching the bottom silicon 901;
before etching the bottom silicon 901, a layer of photoresist is coated on the top silicon 903 and the bottom silicon 901.
The photoresist on the top silicon 903 is used for protecting the devices on the top silicon 903 and preventing the devices from being worn.
And photoetching the photoresist on the bottom silicon 901 through a mask, exposing and developing the photoresist on the bottom silicon 901, and dissolving the photoresist right below the resonator 101 to obtain a mask layer.
The mask is used for performing local photoetching on the photoresist on the bottom layer silicon 901 to form a mask layer, so that the region, not located right below the resonator 101, of the bottom layer silicon 901 is protected, and subsequent etching of the local region of the bottom layer silicon 901 is realized.
Etching the area not covered by the photoresist on the bottom layer silicon 901 by adopting deep reactive ion etching (etching the bottom layer silicon 901 right below the resonator body 101) to form an etching cavity of the bottom layer silicon 901, and protecting the side wall of the etching cavity of the bottom layer silicon 901 by adopting passivation circulation to obtain a back cavity 905 so that the resonator body 101 is suspended.
S206, releasing the buried oxide layer.
Specifically, the buried oxide layer 902 exposed in the back cavity 905 is etched by using gaseous hydrofluoric acid, and the release of the gaseous hydrofluoric acid is stopped after the buried oxide layer 902 in the back cavity 905 is completely etched.
Referring to fig. 10, the piezoresistive conversion efficiency is reduced when the MEMS resonator including the T-type piezoresistive transducer is affected by a dc bias, and the MEMS resonator including the T-type piezoresistive transducer may be analyzed and compared with the MEMS resonator including the piezoresistive transducer according to finite element simulation. The piezoresistive transducer of the invention is shown in figure 2 in a simulated two-dimensional geometrical shape, wherein a cross beam 201 is 6 microns wide and 120 microns long, a connecting rod 202 is 20 microns wide and 60 microns long, and a piezoresistive beam 103 is 10 microns long and variable in width; the positive electrode 104 and the negative electrode 105 of the dc bias are square with a side of 80 μm. The MEMS piezoresistive resonator containing the piezoresistive transducer is in a simulated two-dimensional geometrical shape as shown in figure 1, and a resonator body 101 is a square with the side length of 600 mu m. The two-dimensional geometrical shape of the simulated MEMS piezoresistive resonator containing the conventional T-type piezoresistive transducer is shown in fig. 10, and since there is no report on piezoresistive performance between the square lame mode MEMS resonator and the square shear mode MEMS resonator, the conventional T-type piezoresistive transducer is placed at the position of the piezoresistive transducer according to the present invention under the two modes to form a square lame and square shear mode MEMS resonator containing the conventional T-type piezoresistive transducer for comparison, wherein the geometrical dimensions of the connecting rod 202, the cross beam 201 and the electrodes of the conventional T-type piezoresistive transducer are the same as those of the piezoresistive transducer according to the present invention for comparison performance. The resonators were all 15 μm thick and had a resistivity of 0.01. omega. m.
The finite element simulation temperature distribution and isotherm distribution of the MEMS piezoresistive resonator including the conventional T-type piezoresistive transducer when a dc bias is applied are shown in fig. 11, where the initial temperature is 300K at room temperature and the magnitude of the applied current is 1 mA. From the simulation results, the MEMS piezoresistive resonator containing the conventional T-type piezoresistive transducer has a maximum temperature rise to 316.38K when a dc bias is applied. Under the same conditions, the maximum temperature of the MEMS piezoresistive resonator containing the piezoresistive transducer described in the present invention is only 309.49K (figure 12). The change in the spring constant caused by the temperature increase and the resulting thermal expansion effect affect the resonance frequency to some extent, wherein the resonance frequency is shifted more the larger the temperature change. The resonant frequency of the MEMS piezoresistive resonator containing the conventional T-shaped piezoresistive transducer and the MEMS piezoresistive resonator containing the piezoresistive transducer according to the present invention as a function of dc bias for each mode is shown in fig. 13, 14 and 15. Therefore, the piezoresistive transducer can greatly relieve the influence of direct current bias on resonance frequency deviation.
Definition of piezoresistive transduction efficiency:
wherein R is sense For the total resistance change due to piezoresistive effect, x max For the maximum displacement of the resonator, if the maximum displacements of the MEMS piezoresistive resonators with different transduction structures in the same mode are approximately equal, the larger η is, the larger the sensing resistance is, and the higher the transduction efficiency is. The output amplitudes of different transducers in the same mode are compared by defining the piezoresistive transduction efficiency. The finite element simulation shows that the square stretching mode MEMS piezoresistive resonator containing the piezoresistive transducer is reduced from 2 mu m to 0.25 mu m along with the width of the piezoresistive beam 103, the piezoresistive transduction efficiency is improved from 26.22 omega/m to 368.97 omega/m, and the square stretching mode MEMS piezoresistive resonator containing the traditional piezoresistive transducer has the transduction efficiency of only 3.74 omega/m. The square Lame mode MEMS piezoresistive resonator containing the piezoresistive transducer is reduced from 2 mu m to 0.25 mu m along with the width of the piezoresistive beam, the piezoresistive transduction efficiency is improved from 10.67 omega/m to 129.83 omega/m, and the square stretching mode MEMS piezoresistive resonator containing the traditional piezoresistive transducer has the transduction efficiency of only 1.36 omega/m. The square shear mode MEMS piezoresistive resonator containing the piezoresistive transducer is reduced from 2 mu m to 0.25 mu m along with the width of the piezoresistive beam 103, the piezoresistive transduction efficiency is improved from 23.76 omega/m to 370.68 omega/m, and the square telescopic mode MEMS piezoresistive resonator containing the traditional piezoresistive transducer has the transduction efficiency of only 2.15 omega/m.
In order to further intuitively express the efficiency advantage of the piezoresistive transducer of the present invention compared with the traditional piezoresistive transducer, the MEMS piezoresistive resonator is represented by an equivalent circuit model, the piezoresistive transducer is converted into an equivalent resistance, a fixed driving dc voltage of 50V and an ac power of 0.05mW are applied, all the excitation electrodes 301 are driven, the width of the excitation slot is 2 μm, and the Q value is 2.4 × 10 5 And finally obtaining the output voltage amplitude of the piezoresistive resonators with different modes under different piezoresistive beam widths. The output amplitude value of the square stretching mode is shown in fig. 16, the output amplitude value of the square broaching mode is shown in fig. 17, and the output amplitude value of the square shearing mode is shown in fig. 18. It can be seen that under the same conditions, the pressure of the present inventionThe output amplitude of the piezoresistive transducer is higher than that of the traditional T-shaped piezoresistive transducer.
For piezoresistive transducers, the transduction efficiency is not the only indicator, and since there is a direct current path, the power consumption is also an important consideration of piezoresistive transducers. Under the same direct current bias and the same resistivity, because the bias current of the piezoresistive transducer does not flow through the resonator 101, and the bias current of the traditional T-shaped piezoresistive transducer needs to pass through the resonator 101, the length of a direct current path of the piezoresistive transducer is shorter, and the power consumption of the piezoresistive transducer is lower than that of the traditional T-shaped piezoresistive transducer. In order to visually and comprehensively compare the performance of the piezoresistive transducer of the present invention and the conventional T-type transducer, figure of merit (FOM) was defined:
wherein P is sense To the power of the output signal, P dc Power is consumed for the transducer. The figure of merit represents the output signal power under the maximum displacement of the unit direct current power consumption unit resonator, and the higher the figure of merit, the more excellent the performance of the piezoresistive transducer. The figure of merit of the piezoresistive transducer of the present invention is divided by the figure of merit of the conventional T-shaped piezoresistive transducer to obtain a figure of merit ratio representing the ratio of the output amplitude of the piezoresistive transducer of the present invention to the output amplitude of the conventional T-shaped transducer under the same power consumption and the same maximum resonance displacement (same mode). Figure 19, figure 20 and figure 21 respectively show the figure of merit ratio of the square stretching mode piezoresistive resonator, the square stretching plum-state piezoresistive resonator and the square shearing mode piezoresistive resonator.
While the preferred embodiments of the present invention have been illustrated and described, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (8)
1. The utility model provides a MEMS resonator, its characterized in that, includes syntony body and piezoresistive transducer, the syntony body is square plate structure, be provided with four on the syntony body the piezoresistive transducer, the piezoresistive transducer includes direct current biasing, first anchor structure and piezoresistive roof beam, direct current biasing includes positive electrode and two negative electrodes, first anchor structure is T type anchor structure, first anchor structure includes crossbeam and connecting rod, the one end of connecting rod with the crossbeam is connected perpendicularly, the crossbeam is connected two negative electrodes, the other end of connecting rod with the syntony body is connected, the one end of piezoresistive roof beam with the crossbeam is connected, the other end and the positive electrode of piezoresistive roof beam are connected.
2. The MEMS resonator according to claim 1, wherein the resonator body, the first anchor structure and the piezoresistive beam are fabricated from doped single crystal silicon.
3. The MEMS resonator according to claim 2, wherein when the doped single crystal silicon is p-type doped, the piezoresistive beams have a stretching direction along a <110> direction; when the doped monocrystalline silicon is doped in an n-type mode, the stretching direction of the piezoresistive beams is along a <100> direction.
4. A MEMS resonator according to claim 1, further comprising an excitation capacitive transducer comprising an excitation electrode and an excitation slot, the excitation electrode being disposed around the resonator body, the excitation slot being formed between the excitation electrode and the resonator body.
5. A MEMS resonator according to claim 4, wherein the piezoresistive transducer is suitable for use in a square extensional mode resonator, a square Lamei mode resonator and a square shear mode resonator.
6. A MEMS resonator according to claim 5, wherein when the piezoresistive transducer is applied in a square extensional mode resonator, four of the piezoresistive transducers are respectively disposed at four corners of the resonator body, and four of the excitation electrodes are respectively parallel to four sides of the resonator body and form four of the excitation slots.
7. A MEMS resonator according to claim 5, wherein when the piezoresistive transducer is applied to a square Lamei mode resonator, four of the piezoresistive transducers are each disposed at the mid-point of four sides of the resonator body, and the excitation electrodes are disposed on either side of each of the piezoresistive transducers, the excitation electrodes being parallel to the sides of the resonator body and forming the excitation slot.
8. A MEMS resonator as claimed in claim 5, wherein the four piezoresistive transducers are arranged at the four corners of the resonator body, respectively, and the excitation electrodes are arranged on either side of each piezoresistive transducer, the excitation electrodes being parallel to the sides of the resonator body and forming the excitation slot, when the piezoresistive transducer is applied to a square shear mode resonator.
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