CN114167599B - Image integrated super-structured surface and design method thereof - Google Patents
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Abstract
The application discloses an image integrated super-structured surface design and manufacturing method, which comprises the following steps: acquiring three printing images and a holographic image, and setting the three printing images to be the same in size and resolution; presetting incidence conditions of three groups of incidence light fields; according to the incidence condition, combining the pixel intensities of the first target positions of the three printing images, and determining the intensities of three groups of emergent light fields corresponding to the three groups of incident light fields of the second target positions of the super-structure surface; according to the intensities of the three groups of emergent light fields and in combination with the three groups of incidence conditions, determining a first setting parameter of a nano column in the super-structured surface nano unit; according to the incidence condition of the first group of incidence light fields, combining the phase control of a pair of holographic images, determining a second setting parameter of the nano column in the super-structured surface nano unit; and finishing the presetting of the super-structured surface according to the first setting parameter and the second setting parameter. The application realizes the integration of three printed images and one holographic image, and can be widely applied to the technical field of image integration.
Description
Technical Field
The application relates to the technical field of image integration, in particular to an image integrated super-structured surface and a design method thereof.
Background
The image integration technique refers to the fact that for a single layer structure, different images can be optically observed under different conditions, including holographic images (out of plane imaging) and printed images (on plane imaging). Wherein different conditions include illuminating the sample with light of different polarization, wavelength, angle, and employing different observation modes. In the information age, the demands on hardware have also increased, and there has been a great demand for miniaturization of the information capacity of devices.
High density requires on the one hand miniaturization of the device and on the other hand as large an information capacity as possible. Current miniaturized devices are represented by super-structured surfaces on a sub-wavelength scale; the existing ways of improving the information capacity of the super-structured surface include: multiplexing pixels, coherent pixels, etc. However, the degree of freedom of a regulating light field in the existing image integration technology is single, the information capacity is not high enough, and meanwhile, the safety of information is not high due to the single regulating function of the degree of freedom.
Disclosure of Invention
In view of this, the embodiments of the present application provide an image integrated super-structured surface and a design method thereof, which can integrate three printed images and one holographic image on a single-layer super-structured surface, thereby realizing high-capacity image integration.
A first aspect of an embodiment of the present application provides an image-integrated super-structured surface design and manufacturing method, including:
acquiring three printing images and a holographic image, and setting the three printing images to be the same in size and resolution;
presetting incidence conditions of three groups of incidence light fields;
according to the incidence condition, combining the pixel intensities of the first target positions of the three printing images, and determining the intensities of three groups of emergent light fields corresponding to the three groups of incident light fields at the second target positions of the super-structure surface;
according to the intensities of the three groups of emergent light fields, combining the incidence conditions of the three groups of incident light fields, and determining a first setting parameter of a nano column in the super-structured surface nano unit;
determining a second setting parameter of the nano column in the super-structured surface nano unit according to the incidence condition of the first group of incidence light fields and combining the phase control of the pair of holographic images;
and completing the presetting of the super-constructed surface according to the first setting parameter and the second setting parameter.
Optionally, the preset three groups of incidence conditions of the incident light field include at least one of the following:
presetting the wavelengths of the three groups of incident light fields;
presetting incidence angles of the three groups of incident light fields;
the polarization of the three sets of incident light fields is preset.
Optionally, the determining, according to the incidence condition, the intensities of three outgoing light fields corresponding to the three groups of incident light fields at the second target position of the super-structure surface in combination with the pixel intensities of the first target positions of the three print images includes:
according to the incidence condition, combining an intensity expression of an emergent light field to determine the intensity of the emergent light field, wherein the intensity expression of the emergent light field is as follows:
I(θ 1 ，σ 1 ，λ 1 )＝＝[1+cos(2δ 1 )+cos(2δ 2 )] 2 +[sin(2δ 1 )+sin(2δ 2 )] 2 ，
wherein θ represents an incident angle of the incident light field, σ represents polarization of the incident light field, λ represents a wavelength of the incident light field, (θ 1 ，σ 1 ，λ 1 ) Representing a first set of incident conditions (θ) 2 ，σ 2 ，λ 2 ) Representing a second set of incident conditions (θ) 3 ，σ 3 ，λ 3 ) Representing a third set of incident conditions, I (θ 1 ，σ 1 ，λ 1 ) Representing the intensity of the first set of emerging light fields, I (θ 2 ，σ 2 ，λ 2 ) Representing the intensity of the second set of emerging light fields, I (θ 3 ，σ 3 ，λ 3 ) Representing the intensity of the third set of emerging light fields, k representing the kth nanopillar in the nanocell, k=1 representing the middle nanopillar, δ k Representing the difference between the k+1th nano-pillar and the x-axis included angle and the middle nano-pillar and the x-axis included angle, d k Representing the difference between the abscissa of the k+1th nano-pillar and the abscissa of the middle nano-pillar in the nano-unit.
Optionally, the determining the first setting parameter of the nano-pillars in the super-structured surface nano-unit includes at least one of the following:
determining the difference value of the included angle between the left nano column and the x axis and the included angle between the middle nano column and the x axis in the super-structured surface nano unit;
determining the difference value of the included angle between the right nano column and the x axis and the included angle between the middle nano column and the x axis in the super-structured surface nano unit;
determining a difference between the abscissa of the left nano-pillar and the abscissa of the middle nano-pillar in the super-structured surface nano-unit;
the difference between the abscissa of the right-hand nanopillar and the abscissa of the middle nanopillar in the super-structured surface nanocell is determined.
Optionally, the determining the second setting parameter of the nano-pillars in the super-structured surface nano-unit includes at least one of the following:
determining an included angle between a nano column in the middle of the super-structured surface nano unit and an x axis;
the abscissa of the nanopillars in the middle of the super-structured surface nano-elements is determined.
Optionally, the method further comprises:
acquiring an SOI sheet and a quartz sheet, and performing first treatment on the SOI sheet and the quartz sheet;
growing a silicon oxide protective layer on the upper layer of the SOI sheet by using inductive coupling;
bonding the quartz plate to the top layer of the SOI plate to obtain a transfer plate;
thinning according to the transfer sheet to obtain a monocrystalline silicon substrate;
performing a second process according to the monocrystalline silicon substrate;
performing pattern writing operation of a target layout according to the monocrystalline silicon substrate after the second treatment;
and performing third treatment on the monocrystalline silicon substrate after the pattern writing operation to obtain the image integrated super-structured surface.
Optionally, the first processing the SOI wafer and the quartz wafer includes at least one of:
performing soaking operation on the SOI sheet and the quartz sheet;
performing water passing operation on the SOI sheet and the quartz sheet;
performing ultrasonic operation on the SOI sheet and the quartz sheet;
and drying the SOI sheet and the quartz sheet.
Optionally, the performing a second process according to the monocrystalline silicon substrate includes at least one of:
performing spin coating operation on the monocrystalline silicon substrate;
and carrying out aluminizing operation on the monocrystalline silicon substrate.
Optionally, the monocrystalline silicon substrate after the pattern writing operation is subjected to a third process, including at least one of the following:
developing the monocrystalline silicon substrate after the pattern writing operation;
and etching the monocrystalline silicon substrate after the pattern writing operation.
A second aspect of an embodiment of the present application provides an image-integrated super-structured surface, comprising: a monocrystalline silicon substrate on which a plurality of nano-units are integrated, the nano-units comprising three identical nano-pillars;
the nano columns can be used for adjusting setting parameters and are used for integrating target images on the super-constructed surface;
the nano units are repeatedly arranged in one pixel to form nano pixels, and the nano pixels are used for realizing pixel integration of a target position of a target image.
The application sets three printing images to the same size and resolution by acquiring the three printing images and one holographic image; presetting incidence conditions of three groups of incidence light fields; determining the intensity of an emergent light field corresponding to the incident light field according to the incident condition; according to the intensity of the emergent light field, combining pixels at the same position of the three printing images, and determining a first setting parameter of a nano column in the super-structured surface nano unit; determining a second setting parameter of the nano column in the super-structured surface nano unit according to the incidence condition of the first group of incidence light fields and combining the phase control of the pair of holographic images; and completing the presetting of the super-constructed surface according to the first setting parameter and the second setting parameter. The method can integrate three printed images and one holographic image on a single-layer super-structure surface, and the super-structure surface comprising three nano units with the same nano columns is also provided, the imaging quality can be improved by repeatedly arranging nano pixels formed by the nano units, and the integration of the three printed images and one holographic image can be realized by setting the setting parameters of the three nano columns in each nano unit.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a nano-unit structure of an image-integrated super-structured surface according to an embodiment of the present application;
FIG. 2 is a schematic diagram of a nano-cell arrangement on a super-structured surface for image integration according to an embodiment of the present application;
FIG. 3 is a schematic flow chart of a method for designing and manufacturing an image-integrated super-structured surface according to an embodiment of the present application;
FIG. 4 is a schematic flow chart of an improved G-S algorithm according to an embodiment of the present application;
fig. 5 is a schematic diagram of a spatial light path structure for extracting image information of an image integrated super-structured surface according to an embodiment of the present application.
Detailed Description
The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
An image-integrated super-structured surface comprising: a monocrystalline silicon substrate, on which a plurality of nano units are integrated, wherein the nano units comprise three nano columns with the same length, width and height;
the nano columns can be used for adjusting setting parameters and are used for integrating the target image on the super-constructed surface;
the nanometer units are repeatedly arranged in one pixel to form nanometer pixels, and the nanometer pixels are used for realizing pixel integration of target positions of target images.
Specifically, fig. 1 is a schematic structural diagram of a nano unit of an image integrated super-structured surface, where the vertical coordinates of three nano columns are equal, and the dimensions of the nano columns are as follows: the length of the nano-unit is 160nm, the width of the nano-unit is 40nm, the height of the nano-unit is 500nm, the period is 0.45 x 1.35um, the period is the size of the smallest structural unit area containing three nano-pillars, namely, the length of the nano-unit in the x direction is 1.35um, the length in the y direction is 0.45um, and according to the size, the nano-units are orderly arranged on the super-structure surface. Defining x as the abscissa of the centrally located nanopillars in the nanocell 1 The included angle between the long side of the middle nano column and the x axis isThe difference value of the abscissa of the left nano column and the right nano column and the middle nano column is d 1 、d 2 The included angle between the long axis and the x axis of the left and right nano-columns is +.>The difference is delta 1 、δ 2 . The setting parameters of the nano-pillars comprise x as described above 1 、/>d 1 、d 2 、δ 1 And delta 2 The super-structured surface can integrate the target image by adjusting the setting parameters of the nano-pillars in each nano-unit integrated on the monocrystalline silicon substrate, and the super-structured surface can integrate three printing images and one holographic image through the nano-unit structure comprising three nano-pillars.
Meanwhile, in order to ensure the imaging quality, the nano units formed by three nano columns are repeatedly arranged in one pixel, referring to fig. 2, firstly, three nano units are arranged into a nano matrix with a 3×3 nano column structure, then the nano matrix is repeated twice in the transverse and longitudinal directions to form nano pixels, the nano pixels are 6×6 nano column structures, wherein the center interval between the nano matrices is 1.5um, and the center interval between the nano pixels is 4um.
The implementation principle of the method of the application is described in detail below with reference to the attached drawings of the specification:
fig. 3 is a flowchart of an image integrated super-structured surface design and manufacturing method according to an embodiment of the present application, where the method includes:
acquiring three printing images and a holographic image, and setting the three printing images to be the same in size and resolution;
presetting incidence conditions of three groups of incidence light fields;
according to the incidence condition, combining the pixel intensities of the first target positions of the three printing images, and determining the intensities of three groups of emergent light fields corresponding to the three groups of incident light fields of the second target positions of the super-structure surface;
according to the intensities of the three groups of emergent light fields, and combining the incidence conditions of the three groups of incident light fields, determining a first setting parameter of a nano column in the super-structured surface nano unit;
according to the incidence condition of the first group of incidence light fields, combining the phase control of a pair of holographic images, determining a second setting parameter of the nano column in the super-structured surface nano unit;
and finishing the presetting of the super-structured surface according to the first setting parameter and the second setting parameter.
In some embodiments, the preset three sets of incident light field incidence conditions include at least one of the following:
presetting the wavelength of three groups of incident light fields;
presetting incidence angles of three groups of incident light fields;
polarization of three sets of incident light fields is preset.
In some embodiments, determining intensities of three sets of exit light fields corresponding to three sets of incident light fields at a second target location of the super-structured surface in combination with pixel intensities at a first target location of three print images according to an incident condition comprises:
according to the incidence condition, combining the intensity expression of the emergent light field, determining the intensity of the emergent light field, wherein the intensity expression of the emergent light field is as follows:
I(θ 1 ，σ 1 ，λ 1 )＝[1+cos(2δ 1 )+cos(2δ 2 )] 2 +[sin(2δ 1 )+sin(2δ 2 )] 2 ，
wherein θ represents an incident angle of the incident light field, σ represents polarization of the incident light field, λ represents a wavelength of the incident light field, (θ 1 ，σ 1 ，λ 1 ) Representing a first set of incident conditions (θ) 2 ，σ 2 ，λ 2 ) Representing a second set of incident conditions (θ) 3 ，σ 3 ，λ 3 ) Representing a third set of incident conditions, I (θ 1 ，σ 1 ，λ 1 ) Representing the intensity of the first set of emerging light fields, I (θ 2 ，σ 2 ，λ 2 ) Representing the intensity of the second set of emerging light fields, I (θ 3 ，σ 3 ，λ 3 ) Representing the intensity of the third set of emerging light fields, k representing the kth nanopillar in the nanocell, k=1 representing the middle nanopillar, δ k Representing the difference between the k+1th nano-pillar and the x-axis included angle and the middle nano-pillar and the x-axis included angle, d k Representing the difference between the abscissa of the k+1th nano-pillar and the abscissa of the middle nano-pillar in the nano-unit.
In some embodiments, determining a first set of parameters of the nanopillars in the super-structured surface nano-elements comprises at least one of:
determining the difference value of the included angle between the left nano column and the x axis and the included angle between the middle nano column and the x axis in the super-structured surface nano unit;
determining the difference value of the included angle between the right nano column and the x axis and the included angle between the middle nano column and the x axis in the super-structured surface nano unit;
determining a difference between the abscissa of the left nano-pillar and the abscissa of the middle nano-pillar in the super-structured surface nano-unit;
the difference between the abscissa of the right-hand nanopillar and the abscissa of the middle nanopillar in the super-structured surface nanocell is determined.
In some embodiments, determining a second set of parameters of the nanopillars in the super-structured surface nano-elements comprises at least one of:
determining an included angle between a nano column in the middle of the super-structured surface nano unit and an x axis;
the abscissa of the nanopillars in the middle of the super-structured surface nano-elements is determined.
Specifically, in some implementations, the image-integrated super-constructed surface includes: a monocrystalline silicon substrate on which a plurality of nano-units are integrated, the nano-units comprising three identical nano-pillars; the nano columns can be used for adjusting setting parameters and are used for integrating the target image on the super-constructed surface; the nanometer units are repeatedly arranged in one pixel to form nanometer pixels, and the nanometer pixels are used for realizing pixel integration of target positions of target images.
With a super-structured surface comprising three nano-pillar nano-cell structures, three independent intensity responses need to be achieved under three different sets of incidence conditions for pixels located at specific locations in the super-structured surface layout. For a nano-unit, considering the interference effect of three nano-pillars in the unit, the emergent light field expression can be derived through calculation optics:
wherein E is out Representing the complex vibration of the emergent light field of the pixel; θ, σ, λ represent the incident angle, polarization, and wavelength, respectively, of the incident light field, k represents the kth nanopillar in the nanocell, k=1 represents the middle nanopillar,and x k Representing the angle between the long axis and the x axis of the kth nanometer column in one pixel unit and the coordinate in the x axis, i represents the imaginary singleBits exp represents an exponential function of e, y= ±1, y=1 corresponds to right rotation of incident light, left rotation component of outgoing light is extracted, y= -1 corresponds to left rotation of incident light, right rotation component of outgoing light is extracted, θ represents an angle between a wave vector of incident light and a z axis, and λ is a wavelength of incident light. Considering the relative position and relative angle to the middle nano-pillar to represent the left and right nano-pillars,/->d k ＝x k+1 -x 1 Delta, i.e k Representing the difference between the k+1th nano-pillar and the x-axis included angle and the middle nano-pillar and the x-axis included angle, d k Representing the difference between the abscissa of the k+1th nano-pillar and the abscissa of the middle nano-pillar in the nano-unit.
Then, the complex amplitude expression of the emerging light field can be written as:
wherein x is 1 Representing the coordinates of the middle nanopillar in the x-axis,representing the angle between the long axis and the x-axis of the middle nanopillar, N representing a total of N nanorods in the nanocell, in this case n=3; n-1 means that after the coordinates and rotation angle of one nanorod are fixed, the states of the remaining N-1 nanorods are expressed by the relative coordinates and angles with the first nanorod.
The expressions for the intensity and phase of the single pixel exit light field are:
wherein I is out Representing the intensity of the pixel exit light field; phi (phi) out Representing the phase of the pixel exit light field
Three sets of incidence conditions (incidence conditions include wavelength lambda, incidence angle theta and polarization sigma) are set, and for one pixel, the intensities of emergent light fields under 3 different incidence conditions are respectively as follows:
I(θ 1 ，σ 1 ，λ 1 )＝[1+cos(2δ 1 )+cos(2δ 2 )] 2 +[sin(2δ 1 )+sin(2δ 2 )] 2 ，
where θ represents the incident angle of the incident light field, σ represents the polarization of the incident light field, λ represents the wavelength of the incident light field, I (θ 1 ，σ 1 ，λ 1 ) Representing the intensity of the first set of emerging light fields, I (θ 2 ，σ 2 ，λ 2 ) Representing the intensity of the second set of emerging light fields, I (θ 3 ，σ 3 ，λ 3 ) Representing the intensity of the third set of emerging light fields, k representing the kth nanopillar in the nanocell, k=1 representing the middle nanopillar, δ k Representing the difference between the k+1th nano-pillar and the x-axis included angle and the middle nano-pillar and the x-axis included angle, d k Representing the difference between the abscissa of the k+1th nano-pillar and the abscissa of the middle nano-pillar in the nano-unit.
For a pixel at a particular location, its corresponding exit electric field under 3 sets of incident conditions should satisfy the set of equations simultaneously:
wherein I is 1 ，I 2 ，I 3 Corresponding to the pixel intensities of the three printed images at the same location. For simplicity we consider 3 print images as binary images. Then each channel has two states, bright and dark. Thus requiring 2 3 =8 pixels. Solving 8 sets of equations to obtain the relative position and angle parameters of the nanometer column in the coherent pixel.
By setting the three target print images to the same size and resolution, the intensity of the pixel point at each position under three channels can be obtained, and the delta of the nano column in the nano unit which should be placed at the position can be obtained 1 ，δ 2 ，d 1 ，d 2 Parameters, delta 1 、δ 2 Respectively representing the difference value of the included angle between the long axis of the left nano column and the x axis and the included angle between the long axis of the middle nano column and the x axis, d 1 、d 2 The difference in the abscissa of the left and right nanopillars and the middle nanopillar is represented, respectively.
Then with the fourth channel holographic image, consider the first set of incidence conditions (θ 1 ，σ 1 ，λ 1 Normal incidence), and simultaneously independently controlling the phase, a printed image and a holographic image are integrated under a first set of incidence conditions. θ=0 under normal incidence, and the phase expression of the emergent light field of the pixel is written as:
wherein delta of a pixel at a certain position k ，d k (k=1, 2) has been determined by 3 amplitude channels. We can calculate the phase phi of a contribution to this pixel determined later 0 ：
Next, the pixel needs are calculated using a modified G-S algorithmThe total phase to be contributed. Referring to FIG. 4, a random phase is first imparted to the structured holographic surface after determining its intensity distributionThe intensity and phase distribution I 'in the diffraction plane after diffraction over the distance z is calculated by the discrete Fresnel diffraction algorithm described above' 1 exp(iφ 1 ) Then the intensity distribution of the target holographic image is replaced by the calculated intensity distribution, the replaced result is subjected to discrete Fresnel inverse transformation to obtain a new intensity and phase distribution on the holographic surface, and the intensity distribution of the printing image is replaced by the intensity part of the result just calculated before the next cycle is started, so that after about 50 times of iterative calculation, the phase distribution phi under the specific intensity distribution is obtained out And after diffraction at a distance z, an intensity distribution very close to the target hologram can be presented on the diffraction plane. FRT and IFRT represent discrete Fresnel and inverse transforms, respectively. The discrete fresnel transform formula is:
wherein I' 1 And phi' 1 Respectively representing intensity and phase distribution on the diffraction plane; u represents the initial complex amplitude distribution over the hologram surface. The FFT represents a fast fourier transform algorithm; p, q represent the serial numbers of the discrete pixel points in the diffraction pattern in the x and y directions respectively; m and n represent serial numbers of sampling points on the holographic surface in x and y directions respectively; Δu and Δv are the corresponding frequency domain sampling intervals in the fast fourier transform algorithm; is the diffraction distance; Δx 0 ，Δy 0 And Deltax 1 ，Δy 1 The sampling intervals of the print image plane and the hologram image plane in both directions, respectively.
The Fresnel sampling condition is satisfied:
where M, N represent the number of samples in the x and y directions, respectively.
Calculating the required phase distribution of the hologram under the channel out For a pixel at a particular location, the rotation angle of the center nanopillar of the coherent pixel is required to satisfy the following formula:
abscissa fixation of center nanopillar (x 1 =0), representing pixels of the image device are arranged at equal intervals. Thus, it is obtainedAnd x 1 ，/>Representing the included angle between the middle nano-pillar and the x-axis in the nano-unit, x 1 The abscissa of the middle nanopillar in the nanocell is represented.
All structural information d of the nano-columns in the coherent pixels at any position in the super-structured surface integrating three printing images and one holographic image can be obtained through the method flow 1 ，d 2 ，δ 1 ，δ 2 ，x 1 ，φ 1 。
In some embodiments, the image-integrated super-structured surface design and fabrication method further comprises:
acquiring an SOI sheet and a quartz sheet, and performing first treatment on the SOI sheet and the quartz sheet;
growing a silicon oxide protective layer on the upper layer of the SOI sheet by using inductive coupling;
bonding a quartz plate to the top layer of the SOI plate to obtain a transfer plate;
thinning according to the transfer sheet to obtain a monocrystalline silicon substrate;
performing a second process according to the monocrystalline silicon substrate;
performing pattern writing operation of the target layout according to the monocrystalline silicon substrate after the second treatment;
and performing third treatment according to the monocrystalline silicon substrate after the pattern writing operation to obtain the image integrated super-structured surface.
In some embodiments, the first processing of the SOI wafer and the quartz wafer comprises at least one of:
soaking the SOI sheet and the quartz sheet;
performing water passing operation on the SOI sheet and the quartz sheet;
performing ultrasonic operation on the SOI sheet and the quartz sheet;
the SOI wafer and the quartz wafer are subjected to a drying operation.
In some embodiments, the second processing is performed on a monocrystalline silicon substrate, including at least one of:
performing spin coating operation on the monocrystalline silicon substrate;
and carrying out aluminizing operation on the monocrystalline silicon substrate.
In some embodiments, the third processing is performed on the monocrystalline silicon substrate after the pattern writing operation, including at least one of:
developing the monocrystalline silicon substrate after the pattern writing operation;
and etching the monocrystalline silicon substrate after the pattern writing operation.
Specifically, in some embodiments, the method specifically includes the steps of:
cleaning the SOI wafer and the quartz wafer: firstly, cutting an SOI sheet with the area of 1cm x 1cm and a quartz sheet with the area of 2cm x 2cm, soaking the SOI sheet in a solution with the volume ratio of concentrated H2SO4 to hydrogen peroxide of 3:1 for 10 minutes, then taking out the SOI sheet, and respectively carrying out ultrasonic treatment on the SOI sheet for 10 minutes according to the sequence of acetone-isopropanol-deionized water after 2 deionized water passes. Finally taking out and drying.
Growing a silicon oxide protective layer on the SOI wafer: a protective layer of 300-400nm of silicon oxide is grown on the upper layer of the SOI wafer using an inductively coupled plasma chemical vapor deposition system (ICPCVD).
Bonding: uniformly throwing a layer of ultraviolet curing adhesive NOA61 on the top layer of the SOI sheet at the rotating speed of 4000r/min, then attaching the quartz sheet without air bubbles on the bonding layers of the quartz sheet and the SOI sheet, enabling the surface of the bonding sheet to face upwards, irradiating an ultraviolet lamp for 4 hours, and then placing the transfer sheet into a 50-DEG C constant-temperature drying oven for baking for more than 3 days to enable the ultraviolet curing agent to be aged stably.
And (3) rough thinning: the bottom Si of the uppermost SOI layer of the transfer sheet is ground and thinned to about 30-50um by using a pm6 grinder.
Thinning: the top layer of the transfer sheet was etched all of the Si using an inductively coupled plasma etching System (plasmadro System 100ICP 180). The transfer sheet is soaked for 5-6 minutes in hydrofluoric acid with volume concentration of 10% to remove the silicon oxide box layer in the middle of the SOI sheet. Finally, a 500nm thick monocrystalline silicon substrate on the quartz plate is obtained.
And (3) whirling: and throwing electron beam negative gel HSQ with the thickness of 200nm on the surface of the monocrystalline silicon layer by using the rotating speed of 4000 r/min. The photoresist was cured using a hot plate at 90 degrees celsius for 3 minutes.
Aluminizing: to enhance the conductivity of the substrate, the spun-off wafer was coated with a layer of aluminum having a thickness of about 30nm using a sputtering apparatus.
Electron beam exposure: the pattern on the layout is written onto the substrate using an electron beam direct writing device.
Developing: the exposed wafer was immersed in TMAH solution for 2 minutes, removed and immersed in deionized water for 1 minute to remove excess developer.
Etching: the portion of the unwritten structure was etched away using an inductively coupled plasma etching System (plasmadro System 100ICP 180). Finally, the super-structured surface sample with the designed structure is obtained.
It should be noted that, in some embodiments, the image integrated super-structured surface design and manufacturing method further includes extraction of image information, specifically:
referring to fig. 5, a spatial light path is constructed, laser light of a specific wavelength, polarization and incident angle is incident on the super-structure surface from one side of the quartz substrate, and a light field component orthogonal to the incident polarization and exiting along the z-axis is extracted by using a combination of a quarter-wave plate and a linear polarizer. Finally, the imaging surface (structural surface or holographic surface) of the sample is projected onto the CCD by using a lens group, and the formed image is observed.
In summary, the embodiment of the application provides a structural unit in which three nano-pillars with the same size are arranged in the x-direction, and the structural parameters determining the state of the unit are divided into two types. Through the nano-columns in the fixed center, and the difference value of the x coordinates and the rotation angles of the left nano-column and the right nano-column relative to the middle nano-column is set in a correlated manner, the pixel can present 3 groups of independent intensities (amplitudes) under three groups of different incidence conditions, and then the integration of 3 printing images and 1 holographic image on the single-layer super-structure surface can be realized.
In some alternative embodiments, the functions/acts noted in the block diagrams may occur out of the order noted in the operational illustrations. For example, two blocks shown in succession may in fact be executed substantially concurrently or the blocks may sometimes be executed in the reverse order, depending upon the functionality/acts involved. Furthermore, the embodiments presented and described in the flowcharts of the present application are provided by way of example in order to provide a more thorough understanding of the technology. The disclosed methods are not limited to the operations and logic flows presented herein. Alternative embodiments are contemplated in which the order of various operations is changed, and in which sub-operations described as part of a larger operation are performed independently.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present application have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the application, the scope of which is defined by the claims and their equivalents.
While the preferred embodiment of the present application has been described in detail, the present application is not limited to the embodiments described above, and those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of the present application, and these equivalent modifications or substitutions are included in the scope of the present application as defined in the appended claims.
Claims (6)
1. An image-integrated super-structured surface design and manufacturing method, comprising:
acquiring three printing images and a holographic image, and setting the three printing images to be the same in size and resolution;
presetting incidence conditions of three groups of incidence light fields; the incident conditions include wavelength, incident angle, and polarization;
according to the incidence condition, combining the pixel intensities of the first target positions of the three printing images, and determining the intensities of three groups of emergent light fields corresponding to the three groups of incident light fields at the second target positions of the super-structure surface;
wherein, according to the incidence condition, combining the pixel intensities of the first target positions of the three print images, determining the intensities of three groups of emergent light fields corresponding to the three groups of incident light fields at the second target position of the super-structure surface comprises:
according to the incidence condition, combining an intensity expression of an emergent light field to determine the intensity of the emergent light field, wherein the intensity expression of the emergent light field is as follows:
I(θ 1 ,σ 1 ,λ 1 )＝[1+cos(2δ 1 )+cos(2δ 2 )] 2 +[sin(2δ 1 )+sin(2δ 2 )] 2 ，
wherein θ represents an incident angle of the incident light field, σ represents polarization of the incident light field, λ represents a wavelength of the incident light field, (θ 1 ,σ 1 ,λ 1 ) Representing a first set of incident conditions (θ) 2 ,σ 2 ,λ 2 ) Representing a second set of incident conditions (θ) 3 ,σ 3 ,λ 3 ) Representing a third set of incident conditions, I (θ 1 ,σ 1 ,λ 1 ) Representing the intensity of the first set of emerging light fields, I (θ 2 ,σ 2 ,λ 2 ) Representing the intensity of the second set of emerging light fields, I (θ 3 ,σ 3 ,λ 3 ) Representing the intensity of the third set of emerging light fields, k representing the kth nanopillar in the nanocell, k=1 representing the middle nanopillar, δ k Representing the difference between the k+1th nano-pillar and the x-axis included angle and the middle nano-pillar and the x-axis included angle, d k Representing the difference between the abscissa of the k+1th nano-pillar and the abscissa of the middle nano-pillar in the nano-unit;
according to the intensities of the three groups of emergent light fields, combining the wavelengths, the incident angles and the polarization of the three groups of incident light fields, determining a first setting parameter of a nano column in the super-structured surface nano unit; the method comprises the steps of determining a first setting parameter of a nano column in the super-structured surface nano unit, wherein the first setting parameter at least comprises one of the following steps:
determining the difference value of the included angle between the left nano column and the x axis and the included angle between the middle nano column and the x axis in the super-structured surface nano unit;
determining the difference value of the included angle between the right nano column and the x axis and the included angle between the middle nano column and the x axis in the super-structured surface nano unit;
determining a difference between the abscissa of the left nano-pillar and the abscissa of the middle nano-pillar in the super-structured surface nano-unit;
determining a difference between the abscissa of the right-hand nanopillar and the abscissa of the middle nanopillar in the super-structured surface nanopillar;
determining a second setting parameter of the nano column in the super-structured surface nano unit according to the incidence condition of the first group of incidence light fields and combining the phase control of the pair of holographic images; wherein, the determining the second setting parameter of the nano-pillar in the super-structured surface nano-unit at least comprises one of the following steps:
determining an included angle between a nano column in the middle of the super-structured surface nano unit and an x axis;
determining the abscissa of the nano-pillars in the middle of the super-structured surface nano-unit;
and completing the presetting of the super-constructed surface according to the first setting parameter and the second setting parameter.
2. The image-integrated super-structured surface design and fabrication method of claim 1, further comprising:
acquiring an SOI sheet and a quartz sheet, and performing first treatment on the SOI sheet and the quartz sheet;
growing a silicon oxide protective layer on the upper layer of the SOI sheet by using inductive coupling;
bonding the quartz plate to the top layer of the SOI plate to obtain a transfer plate;
thinning according to the transfer sheet to obtain a monocrystalline silicon substrate;
performing a second process according to the monocrystalline silicon substrate;
performing pattern writing operation of a target layout according to the monocrystalline silicon substrate after the second treatment;
and performing third treatment on the monocrystalline silicon substrate after the pattern writing operation to obtain the image integrated super-structured surface.
3. The method of image integrated super-structure surface design and fabrication according to claim 2, wherein said first processing of said SOI wafer and said quartz wafer comprises at least one of:
performing soaking operation on the SOI sheet and the quartz sheet;
performing water passing operation on the SOI sheet and the quartz sheet;
performing ultrasonic operation on the SOI sheet and the quartz sheet;
and drying the SOI sheet and the quartz sheet.
4. The method of image integrated super-structure surface design and fabrication according to claim 2, wherein said performing a second process on said single crystal silicon substrate comprises at least one of:
performing spin coating operation on the monocrystalline silicon substrate;
and carrying out aluminizing operation on the monocrystalline silicon substrate.
5. The method of claim 2, wherein the third processing of the monocrystalline silicon substrate after the pattern writing operation comprises at least one of:
developing the monocrystalline silicon substrate after the pattern writing operation;
and etching the monocrystalline silicon substrate after the pattern writing operation.
6. An image-integrated super-structured surface, comprising: a monocrystalline silicon substrate on which a plurality of nano-units are integrated, the nano-units comprising three identical nano-pillars;
the nano columns can be used for adjusting setting parameters and are used for integrating target images on the super-constructed surface;
the nanometer units are repeatedly arranged in one pixel to form nanometer pixels, and the nanometer pixels are used for realizing pixel integration of a target position of a target image;
the design and manufacturing method of the super-structured surface comprises the following steps:
acquiring three printing images and a holographic image, and setting the three printing images to be the same in size and resolution;
presetting incidence conditions of three groups of incidence light fields; the incident conditions include wavelength, incident angle, and polarization;
according to the incidence condition, combining the pixel intensities of the first target positions of the three printing images, and determining the intensities of three groups of emergent light fields corresponding to the three groups of incident light fields at the second target positions of the super-structure surface;
wherein, according to the incidence condition, combining the pixel intensities of the first target positions of the three print images, determining the intensities of three groups of emergent light fields corresponding to the three groups of incident light fields at the second target position of the super-structure surface comprises:
according to the incidence condition, combining an intensity expression of an emergent light field to determine the intensity of the emergent light field, wherein the intensity expression of the emergent light field is as follows:
I(θ 1 ,σ 1 ,λ 1 )＝[1+cos(2δ 1 )+cos(2δ 2 )] 2 +[sin(2δ 1 )+sin(2δ 2 )] 2 ，
wherein θ represents an incident angle of the incident light field, σ represents polarization of the incident light field, λ represents a wavelength of the incident light field, (θ 1 ,σ 1 ,λ 1 ) Representing a first set of incident conditions (θ) 2 ,σ 2 ,λ 2 ) Representing a second set of incident conditions (θ) 3 ,σ 3 ,λ 3 ) Representing a third set of incident conditions, I (θ 1 ,σ 1 ,λ 1 ) Representing the intensity of the first set of emerging light fields, I (θ 2 ,σ 2 ,λ 2 ) Representing the intensity of the second set of emerging light fields, I (θ 3 ,σ 3 ,λ 3 ) Representing the intensity of the third set of emerging light fields, k representing the kth nanopillar in the nanocell, k=1 representing the middle nanopillar, δ k Representing the included angle and the middle of the k+1th nano column and the x axis in the nano unitD is the difference of the included angle between the nano column and the x axis k Representing the difference between the abscissa of the k+1th nano-pillar and the abscissa of the middle nano-pillar in the nano-unit;
according to the intensities of the three groups of emergent light fields, combining the wavelengths, the incident angles and the polarization of the three groups of incident light fields, determining a first setting parameter of a nano column in the super-structured surface nano unit; the method comprises the steps of determining a first setting parameter of a nano column in the super-structured surface nano unit, wherein the first setting parameter at least comprises one of the following steps:
determining the difference value of the included angle between the left nano column and the x axis and the included angle between the middle nano column and the x axis in the super-structured surface nano unit;
determining the difference value of the included angle between the right nano column and the x axis and the included angle between the middle nano column and the x axis in the super-structured surface nano unit;
determining a difference between the abscissa of the left nano-pillar and the abscissa of the middle nano-pillar in the super-structured surface nano-unit;
determining a difference between the abscissa of the right-hand nanopillar and the abscissa of the middle nanopillar in the super-structured surface nanopillar;
determining a second setting parameter of the nano column in the super-structured surface nano unit according to the incidence condition of the first group of incidence light fields and combining the phase control of the pair of holographic images; wherein, the determining the second setting parameter of the nano-pillar in the super-structured surface nano-unit at least comprises one of the following steps:
determining an included angle between a nano column in the middle of the super-structured surface nano unit and an x axis;
determining the abscissa of the nano-pillars in the middle of the super-structured surface nano-unit;
and completing the presetting of the super-constructed surface according to the first setting parameter and the second setting parameter.
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