CN114167599A - Image integrated super-structure surface and design method thereof - Google Patents
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Abstract
The invention discloses a method for designing and manufacturing a super-structure surface integrated by images, which comprises the following steps: acquiring three printed images and a holographic image, and setting the three printed images to be the same in size and resolution; presetting incidence conditions of three groups of incident light fields; according to the incident conditions, combining the pixel intensities of the first target positions of the three printed images, and determining the intensities of three groups of emergent light fields corresponding to three groups of incident light fields at the second target position of the super-structure surface; determining a first setting parameter of the nano-pillars in the nanostructure surface nano-units according to the intensities of the three groups of emergent light fields and by combining the three groups of incident conditions; determining a second setting parameter of the nano-pillars in the nanostructure surface nano-units according to the incident conditions of the first group of incident light fields and by combining the phase control of a pair of holographic images; and finishing the presetting of the surface of the super structure according to the first setting parameter and the second setting parameter. The invention realizes the integration of three printed images and one holographic image, and can be widely applied to the technical field of image integration.
Description
Technical Field
The invention relates to the technical field of image integration, in particular to an image-integrated super-structure surface and a design method thereof.
Background
Image integration techniques refer to the ability to optically observe different images for a single layer structure under different conditions, including holographic images (imaging out of the structured surface) and printed images (imaging on the structured surface). Wherein the different conditions include illuminating the sample with different polarizations, wavelengths, angles of light, and different viewing modalities. In the information age, the demand for hardware is increasing, and there is a high demand for miniaturization of information capacity of devices.
High density requires, on the one hand, miniaturization of the devices and, on the other hand, the largest possible information capacity. The current miniaturized devices are represented by sub-wavelength scale ultrastructural surfaces; the existing way to increase the information capacity of a superstructure surface comprises: multiplexed pixels, coherent pixels, etc. However, the degree of freedom of the regulation and control light field of the existing image integration technology is single, the information capacity is not high enough, and meanwhile, the information safety is not high due to the single regulation and control function of the degree of freedom.
Disclosure of Invention
In view of this, embodiments of the present invention provide an image-integrated super-structured surface and a design method thereof, which can realize integration of three printed images and one holographic image on a single-layer super-structured surface, thereby realizing high-volume image integration.
A first aspect of an embodiment of the present invention provides a method for designing and manufacturing an image-integrated super-structured surface, including:
acquiring three printed images and a holographic image, and setting the three printed images to be the same in size and resolution;
presetting incidence conditions of three groups of incident light fields;
according to the incidence conditions, combining the pixel intensities of the first target positions of the three printed images, and determining the intensities of three groups of emergent light fields corresponding to the three groups of incident light fields at the second target position of the super-structure surface;
determining a first setting parameter of the nano-pillars in the nanostructure surface nano-units according to the intensities of the three groups of emergent light fields and by combining the incident conditions of the three groups of incident light fields;
determining a second setting parameter of the nano-pillars in the nanostructure surface nano-units according to the incident conditions of the first group of incident light fields and by combining the phase control of the pair of holographic images;
and finishing the presetting of the surface of the super-structure according to the first setting parameter and the second setting parameter.
Optionally, the preset incidence conditions of the three groups of incident light fields include at least one of:
presetting the wavelengths of the three groups of incident light fields;
presetting the incidence angles of the three groups of incident light fields;
the polarization of the three sets of incident light fields is preset.
Optionally, the determining, according to the incident condition and in combination with the pixel intensities of the first target positions of the three printed images, the intensities of three groups of emergent light fields corresponding to the three groups of incident light fields at the second target position of the super-structured surface includes:
determining the intensity of the emergent light field according to the incident condition and by combining an intensity expression of the emergent light field, wherein the intensity expression of the emergent light field is as follows:
I(θ1，σ1，λ1)＝＝[1+cos(2δ1)+cos(2δ2)]2+[sin(2δ1)+sin(2δ2)]2，
where θ represents the incident angle of the incident light field, σ represents the polarization of the incident light field, λ represents the wavelength of the incident light field, and (θ)1，σ1，λ1) Representing a first set of incident conditions, (θ)2，σ2，λ2) Representing a second set of incident conditions, (θ)3，σ3，λ3) Denotes a third set of incidence conditions, I (θ)1，σ1，λ1) Representing the intensity of the first set of emergent light fields, I (theta)2，σ2，λ2) Representing the intensity of the emergent light field of the second group, I (theta)3，σ3，λ3) Representing the intensity of the emergent light field of the third group, k represents the kth nano-column in the nano-unit, k is 1 to represent the middle nano-column, and deltakRepresenting the difference between the angle between the (k + 1) th nanopillar and the x-axis and the angle between the middle nanopillar and the x-axis in the nano unit, dkThe difference between the abscissa of the (k + 1) th nanopillar in the nanocell and the abscissa of the middle nanopillar is expressed.
Optionally, the determining a first setting parameter of the nano-pillars in the nanostructure surface nano-unit includes at least one of:
determining the difference value of the included angle between the left side nano column and the x axis in the nanostructure surface nano unit and the included angle between the middle nano column and the x axis;
determining the difference value of the included angle between the right-side nano column and the x axis in the nanostructure surface nano unit and the included angle between the middle nano column and the x axis;
determining the difference value between the abscissa of the left-side nano-pillar and the abscissa of the middle nano-pillar in the nanostructure surface nano-unit;
and determining the difference value of the abscissa of the right-side nano-pillar and the abscissa of the middle nano-pillar in the super-structure surface nano-unit.
Optionally, the determining of the second setting parameter of the nano-pillars in the nanostructure surface nano-unit includes at least one of:
determining the included angle between the nano column in the middle of the nanostructure surface nano unit and the x axis;
and determining the abscissa of the nano-pillar in the middle of the nanostructure surface nano-unit.
Optionally, the method further comprises:
obtaining an SOI (silicon on insulator) sheet and a quartz sheet, and carrying out first treatment on the SOI sheet and the quartz sheet;
growing a silicon oxide protective layer on the upper layer of the SOI chip by using inductive coupling;
bonding the quartz wafer to the top layer of the SOI wafer to obtain a transfer wafer;
thinning according to the transfer sheet to obtain a monocrystalline silicon substrate;
performing second treatment according to the monocrystalline silicon substrate;
performing pattern writing operation of the target layout according to the monocrystalline silicon substrate after the second treatment;
and carrying out third treatment according to the monocrystalline silicon substrate after the pattern writing operation to obtain the image integrated super-structure surface.
Optionally, the performing a first treatment on the SOI wafer and the quartz wafer includes at least one of:
soaking the SOI sheet and the quartz sheet;
carrying out water passing operation on the SOI sheet and the quartz sheet;
carrying out ultrasonic operation on the SOI sheet and the quartz sheet;
and drying the SOI sheet and the quartz sheet.
Optionally, the performing a second process according to the single crystal silicon substrate includes at least one of:
carrying out spin coating operation on the monocrystalline silicon substrate;
and carrying out aluminum plating operation on the monocrystalline silicon substrate.
Optionally, the monocrystalline silicon substrate after the pattern writing operation is subjected to a third process, which includes at least one of:
carrying out development operation on the monocrystalline silicon substrate after the pattern writing operation;
and etching the monocrystalline silicon substrate after the pattern writing operation.
A second aspect of an embodiment of the present invention provides an image-integrated nanostructured surface comprising: the device comprises a monocrystalline silicon substrate, wherein a plurality of nano units are integrated on the monocrystalline silicon substrate, and each nano unit comprises three same nano columns;
the nano columns can adjust setting parameters and are used for realizing integration of a target image on the surface of the super structure;
the nano-units are repeatedly arranged in one pixel to form a nano-pixel, and the nano-pixel is used for realizing pixel integration of a target position of a target image.
The method comprises the steps of acquiring three printed images and a holographic image, and setting the three printed images to be the same in size and resolution; presetting incidence conditions of three groups of incident light fields; determining the intensity of an emergent light field corresponding to the incident light field according to the incident condition; determining a first setting parameter of the nano-pillars in the nanostructure surface nano-units according to the intensity of the emergent light field and the pixels at the same positions of the three printed images; determining a second setting parameter of the nano-pillars in the nanostructure surface nano-units according to the incident conditions of the first group of incident light fields and by combining the phase control of the pair of holographic images; and finishing the presetting of the surface of the super-structure according to the first setting parameter and the second setting parameter. The method can realize the integration of three printed images and one holographic image on a single-layer super-structure surface, the invention also provides a super-structure surface comprising three nano units of the same nano column, the imaging quality can be improved by repeatedly arranging nano pixels formed by the nano units, and the integration of three printed images and one holographic image can be realized by setting the setting parameters of the three nano columns in each nano unit.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic diagram of a nano-cell structure of an image-integrated nanostructured surface provided by an embodiment of the present invention;
FIG. 2 is a schematic diagram of the arrangement of nano-elements on the surface of an image-integrated super-structure provided by an embodiment of the present invention;
FIG. 3 is a schematic flow chart of a method for designing and manufacturing an image integrated super-structured surface according to an embodiment of the present invention;
FIG. 4 is a schematic flow chart of an improved G-S algorithm provided by an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a spatial optical path for extracting image information from an image-integrated super-structured surface according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
An image-integrated super-textured surface comprising: the device comprises a monocrystalline silicon substrate, wherein a plurality of nano units are integrated on the monocrystalline silicon substrate, and each nano unit comprises three nano columns with the same length, width and height;
the nano-pillars can adjust setting parameters and are used for realizing integration of target images on the surface of the super-structure;
the nano-units are repeatedly arranged in one pixel to form a nano-pixel, and the nano-pixel is used for realizing pixel integration of a target position of a target image.
Specifically, fig. 1 is a schematic structural diagram of a nano-unit with an image-integrated super-structured surface provided in an embodiment of the present invention, in the nano-unit, the ordinate of three nano-pillars is equal, and the size of the nano-pillars is: the length is 160nm, the width is 40nm, the height is 500nm, the period is 0.45 × 1.35um, the period is the size of the minimum structural unit area containing three nano columns, namely the length of the nano unit in the x direction is 1.35um, the length of the nano unit in the y direction is 0.45um, and according to the size, the nano units are orderly arranged on the super-structure surface. Defining the abscissa of the nano-pillar positioned in the middle of the nano-unit as x1The included angle between the long edge of the middle nano-column and the x axis is
The difference value of the horizontal coordinates of the left and right nano-pillars and the middle nano-pillar is d1、d2The included angle between the long axis of the left nano-column and the long axis of the right nano-column and the x axis
Difference values are respectively delta1、δ2. Setting parameters of the nano-pillarsIncluding x as described above1、
d1、d2、δ1And delta2The integration of a super-structure surface to a target image can be realized by adjusting the setting parameters of the nano-pillars in each nano-unit integrated on the monocrystalline silicon substrate, and the integration of three printed images and a holographic image can be realized by the super-structure surface through the nano-unit structure comprising the three nano-pillars.
Meanwhile, in order to ensure the imaging quality, the nano units formed by the three nano columns are repeatedly arranged in one pixel, referring to fig. 2, firstly the three nano units are arranged to have a nano matrix with a 3 × 3 nano column structure, and then the nano matrix is repeated twice in the transverse and longitudinal directions to form a nano pixel, wherein the nano pixel is a6 × 6 nano column structure, the central interval between the nano matrices is 1.5um, and the central interval between the nano pixels is 4 um.
The following detailed description of the implementation principle of the method of the present invention is made with reference to the accompanying drawings:
fig. 3 is a flowchart illustrating a method for designing and manufacturing an image-integrated super-structure surface according to an embodiment of the present invention, the method including:
acquiring three printed images and a holographic image, and setting the three printed images to be the same in size and resolution;
presetting incidence conditions of three groups of incident light fields;
according to the incident conditions, combining the pixel intensities of the first target positions of the three printed images, and determining the intensities of three groups of emergent light fields corresponding to three groups of incident light fields at the second target position of the super-structure surface;
determining a first setting parameter of the nano-pillars in the nanostructure surface nano-units according to the intensities of the three groups of emergent light fields and by combining the incident conditions of the three groups of incident light fields;
determining a second setting parameter of the nano-pillars in the nanostructure surface nano-units according to the incident conditions of the first group of incident light fields and by combining the phase control of a pair of holographic images;
and finishing the presetting of the surface of the super structure according to the first setting parameter and the second setting parameter.
In some embodiments, the incidence conditions of the three sets of incident light fields are preset, including at least one of:
presetting the wavelengths of three groups of incident light fields;
presetting incidence angles of three groups of incident light fields;
the polarization of the three sets of incident light fields is preset.
In some embodiments, determining intensities of three sets of emergent light fields corresponding to the three sets of incident light fields at the second target position of the super-structured surface according to the incident condition and combining the pixel intensities of the first target position of the three printed images comprises:
determining the intensity of the emergent light field by combining an intensity expression of the emergent light field according to the incident condition, wherein the intensity expression of the emergent light field is as follows:
I(θ1，σ1，λ1)＝[1+cos(2δ1)+cos(2δ2)]2+[sin(2δ1)+sin(2δ2)]2，
where θ represents the incident angle of the incident light field, σ represents the polarization of the incident light field, λ represents the wavelength of the incident light field, and (θ)1，σ1，λ1) Representing a first set of incident conditions, (θ)2，σ2，λ2) Representing a second set of incident conditions, (θ)3，σ3，λ3) Denotes a third set of incidence conditions, I (θ)1，σ1，λ1) Representing the intensity of the first set of emergent light fields, I (theta)2，σ2，λ2) Representing the intensity of the emergent light field of the second group, I (theta)3，σ3，λ3) To representThe intensity of the emergent light field of the third group, k represents the kth nano-column in the nano-unit, k is 1 to represent the middle nano-column, and deltakRepresenting the difference between the angle between the (k + 1) th nanopillar and the x-axis and the angle between the middle nanopillar and the x-axis in the nano unit, dkThe difference between the abscissa of the (k + 1) th nanopillar in the nanocell and the abscissa of the middle nanopillar is expressed.
In some embodiments, determining a first setting parameter of the nano-pillars in the nano-cells of the nanostructured surface comprises at least one of:
determining the difference value of the included angle between the left side nano column and the x axis in the nanostructure surface nano unit and the included angle between the middle nano column and the x axis;
determining the difference value of the included angle between the right-side nano column and the x axis in the nanostructure surface nano unit and the included angle between the middle nano column and the x axis;
determining the difference value between the abscissa of the left-side nano-pillar and the abscissa of the middle nano-pillar in the nanostructure surface nano-unit;
and determining the difference value of the abscissa of the right-side nano-pillar and the abscissa of the middle nano-pillar in the super-structure surface nano-unit.
In some embodiments, determining the second setting parameter of the nano-pillars in the nano-cells of the nanostructured surface comprises at least one of:
determining the included angle between the nano column in the middle of the nanostructure surface nano unit and the x axis;
and determining the abscissa of the nano-pillar in the middle of the nanostructure surface nano-unit.
In particular, in some implementations, the image-integrated super-textured surface includes: the device comprises a monocrystalline silicon substrate, wherein a plurality of nano units are integrated on the monocrystalline silicon substrate, and each nano unit comprises three same nano columns; the nano-pillars can adjust setting parameters and are used for realizing integration of target images on the surface of the super-structure; the nano-units are repeatedly arranged in one pixel to form a nano-pixel, and the nano-pixel is used for realizing pixel integration of a target position of a target image.
With a nanostructured surface comprising a nano-unit structure of three nano-pillars, three independent intensity responses need to be achieved under three different sets of incident conditions for pixels located at specific positions in the layout of the nanostructured surface. For a nanometer unit, considering the interference effect among three nanometer columns in the unit, the emergent light field expression can be derived through computational optics:
wherein E isoutRepresenting the complex vibration of the emergent light field of the pixel; theta, sigma and lambda respectively represent the incident angle, polarization and wavelength of an incident light field, k represents the kth nano-column in a nano-unit, k is 1 to represent the middle nano-column,
and xkThe angle between the long axis of the kth nano-pillar in one pixel unit and the x axis and the coordinate on the x axis are represented, i represents the unit of an imaginary number, exp represents an exponential function of e, when Y is +/-1, incident light is right-handed rotation when Y is 1, emergent left-handed rotation component is extracted, when Y is-1, incident light is left-handed rotation component, emergent right-handed rotation component is extracted, theta represents the angle between the wave vector of the incident light and the z axis, and lambda is the wavelength of the incident light. Considering that the left and right nanopillars are represented by relative positions and relative angles with the central nanopillar,
dk＝xk+1-x1i.e. deltakRepresenting the difference between the angle between the (k + 1) th nanopillar and the x-axis and the angle between the middle nanopillar and the x-axis in the nano unit, dkThe difference between the abscissa of the (k + 1) th nanopillar in the nanocell and the abscissa of the middle nanopillar is expressed.
Then, the complex amplitude expression of the outgoing light field can be written as:
wherein x is1Represents a central nano-pillar inThe coordinates of the x-axis are,
the included angle between the long axis of the middle nano-pillar and the x axis is shown, N represents that N nano-rods are arranged in the nano-units in total, and N is 3 in the case of the nano-units; the meaning of N-1 is that after the coordinates and the rotation angle of one nanorod are fixed, the states of the remaining N-1 nanorods are all represented by the relative coordinates and angles with the first nanorod.
The expressions for the intensity and phase of the emergent light field for a single pixel are respectively:
wherein, IoutRepresenting the intensity of the pixel's emergent light field; phi is aoutRepresenting the phase of the emergent light field of a pixel
Three groups of incidence conditions (the incidence conditions comprise wavelength lambda, incidence angle theta and polarization sigma) are set, and for one pixel, the intensities of the emergent light field under 3 different incidence conditions are respectively as follows:
I(θ1，σ1，λ1)＝[1+cos(2δ1)+cos(2δ2)]2+[sin(2δ1)+sin(2δ2)]2，
where θ represents the angle of incidence of the incident light field, σ represents the polarization of the incident light field, λ represents the wavelength of the incident light field, and I (θ)1，σ1，λ1) Representing the intensity of the first set of emergent light fields, I (theta)2，σ2，λ2) Representing the intensity of the emergent light field of the second group, I (theta)3，σ3，λ3) Representing the intensity of the emergent light field of the third group, k represents the kth nano-column in the nano-unit, k is 1 to represent the middle nano-column, and deltakRepresenting the difference between the angle between the (k + 1) th nanopillar and the x-axis and the angle between the middle nanopillar and the x-axis in the nano unit, dkThe difference between the abscissa of the (k + 1) th nanopillar in the nanocell and the abscissa of the middle nanopillar is expressed.
For a pixel at a specific position, its corresponding exit electric field under 3 sets of incident conditions should satisfy the equation system at the same time:
wherein, I1，I2，I3Corresponding to the pixel intensities of the three printed images at the same position. For simplicity, we consider 3 printed images as binary images. Each channel has two states, light and dark. Thus, it is required to have 238 pixels. And solving 8 sets of equations to obtain the relative position and angle parameters of the nano-pillars in the coherent pixels.
By setting the three target printing images to be the same in size and resolution, the intensity of the pixel point at each position under three channels can be obtained, and the delta of the nano-pillar in the nano-unit to be placed at the position can be further obtained1，δ2，d1，d2Parameter, delta1、δ2Respectively representing the difference value of the included angle between the long axis of the left and right nano-pillars and the x-axis and the included angle between the long axis of the middle nano-pillar and the x-axis, d1、d2Respectively, the difference between the abscissa of the left and right nanopillars and the abscissa of the middle nanopillar.
Then integration with a fourth channel holographic image, taking into account the first set of incidence conditions (θ)1，σ1，λ1At normal incidence) while simultaneouslyThe phases are independently controlled to achieve integration of a printed image with a holographic image under a first set of incident conditions. Under the normal incidence condition, theta is 0, and the emergent light field phase expression of the pixel is written as follows:
wherein delta of a pixel at a certain positionk，dk(k-1, 2) has been determined by 3 amplitude channels. So we can first calculate the phase phi of a later determined term contributing to this pixel0：
The total phase that this pixel needs to contribute is then calculated using the modified G-S algorithm. Referring to FIG. 4, the intensity distribution on the holographic surface of the structure is first determined and then given a random phase
Calculating the intensity and phase distribution I 'on the diffraction plane after diffraction by the distance z by using the discrete Fresnel diffraction algorithm described above'1 exp(iφ1) Then, the intensity distribution of the target holographic image is used for replacing the calculated intensity distribution, then the discrete Fresnel inverse transformation is carried out on the replaced result, a new intensity and phase distribution is obtained on the holographic surface, the intensity distribution of the printing image is used for replacing the intensity part in the calculated result before the next cycle is started, and the phase distribution phi under the specific intensity distribution is obtained after about 50 times of iterative calculationoutAnd after diffraction at a distance z, the intensity distribution of the target hologram can be displayed at the diffraction surface very close to the diffraction surface. FRT and IFRT represent discrete fresnel transform and inverse transform, respectively. The discrete fresnel transform formula is:
wherein, I'1And phi'1Respectively representing the intensity and phase distribution on the diffraction surface; u denotes the initial complex amplitude distribution on the holographic surface. FFT represents a fast fourier transform algorithm; p, q represent the serial numbers of the discrete pixel points in the diffraction pattern in the x and y directions respectively; m and n represent the serial numbers of the sampling points on the holographic surface in the x direction and the y direction respectively; Δ u and Δ v are the corresponding frequency domain sampling intervals in the fast fourier transform algorithm; is the diffraction distance; Δ x0，Δy0And Δ x1，Δy1Respectively, the sampling intervals in both directions for the print image plane and the hologram image plane.
The Fresnel sampling conditions are met as follows:
where M, N represent the number of samples in the x and y directions, respectively.
After calculating the phase distribution needed by the hologram under the channeloutFor a pixel at a specific position, the rotation angle of the central nanopillar of the coherent pixel is required to satisfy the following formula:
abscissa fixation of the central nanopillar (x)10), the pixels representing the image device are arranged at equal intervals. Thus, obtain
And x1，
Denotes the angle between the central nanopillar in the nanocell and the x-axis, x1The abscissa indicates the center nanopillar in the nanocell.
By the method, all the structural information d of the nano-pillars in the coherent pixel at any position of the super-structure surface for integrating three printed images and one holographic image can be obtained1，d2，δ1，δ2，x1，φ1。
In some embodiments, the image-integrated metamaterial surface design and fabrication method further comprises:
obtaining an SOI (silicon on insulator) sheet and a quartz sheet, and carrying out first treatment on the SOI sheet and the quartz sheet;
growing a silicon oxide protective layer on the upper layer of the SOI chip by using inductive coupling;
bonding a quartz wafer to the top layer of the SOI wafer to obtain a transfer wafer;
thinning according to the transfer sheet to obtain a monocrystalline silicon substrate;
performing a second process based on the single crystal silicon substrate;
performing pattern writing operation of the target layout according to the monocrystalline silicon substrate after the second treatment;
and carrying out third treatment according to the monocrystalline silicon substrate after the pattern writing operation to obtain the image integrated super-structure surface.
In some embodiments, the first process is performed on the SOI wafer and the quartz wafer, including at least one of:
soaking the SOI sheet and the quartz sheet;
carrying out water passing operation on the SOI sheet and the quartz sheet;
carrying out ultrasonic operation on the SOI sheet and the quartz sheet;
the SOI wafer and the quartz wafer are subjected to a drying operation.
In some embodiments, the second process is performed from a single crystal silicon substrate, including at least one of:
carrying out spin coating operation on the monocrystalline silicon substrate;
and carrying out aluminum plating operation on the monocrystalline silicon substrate.
In some embodiments, the third process is performed on the single crystal silicon substrate after the pattern writing operation, and includes at least one of:
carrying out development operation on the monocrystalline silicon substrate after the pattern writing operation;
and etching the monocrystalline silicon substrate after the pattern writing operation.
Specifically, in some embodiments, the method specifically includes the following steps:
cleaning the SOI sheet and the quartz sheet: firstly, cutting an SOI sheet with the area of about 1cm x 1cm and a quartz sheet with the area of 2cm x 2cm, soaking the SOI sheet and the quartz sheet in a solution of concentrated H2SO4 and hydrogen peroxide with the volume ratio of 3:1 for 10 minutes, then taking out the SOI sheet and the quartz sheet, passing through 2 channels of deionized water, and respectively carrying out ultrasonic treatment on the SOI sheet and the quartz sheet for 10 minutes according to the sequence of acetone-isopropanol-deionized water. And finally taking out and drying.
Growing a silicon oxide protective layer on the SOI sheet: and growing a silicon oxide protective layer after 300-400nm on the upper layer of the SOI wafer by using an inductively coupled plasma chemical vapor deposition system (ICPCVD).
Bonding: uniformly throwing a layer of ultraviolet curing adhesive NOA61 on the top layer of the SOI sheet at the rotating speed of 4000r/min, then pasting the quartz sheet without bubbles on the bonding layer of the quartz sheet and the SOI sheet, facing the quartz sheet side of the bonding sheet upwards, irradiating an ultraviolet lamp for 4 hours, then putting the transfer sheet into a constant-temperature drying oven at 50 ℃ for baking for more than 3 days, and enabling the ultraviolet curing agent to be aged stably.
Coarse thinning: the bottom layer Si of the uppermost SOI layer of the transfer sheet is ground and thinned to about 30-50um by using a pm6 grinder.
Thinning: the Si of the top layer of the transfer sheet was etched away completely using an inductively coupled plasma etching System (plasmaprosystem 100ICP 180). And soaking the transfer wafer for 5-6 minutes in hydrofluoric acid with the volume concentration of 10%, and removing the silicon oxide box layer in the middle of the SOI wafer. Finally obtaining the monocrystalline silicon substrate with the thickness of 500nm on the quartz plate.
Spin coating: and throwing the electron beam negative photoresist HSQ with the thickness of 200nm on the surface of the monocrystalline silicon layer at the rotating speed of 4000 r/min. The photoresist was cured using a hot plate bake at 90 degrees celsius for 3 minutes.
Aluminum plating: in order to enhance the conductivity of the substrate, the wafer spun with the glue is coated with a layer of aluminum with a thickness of about 30nm by using a sputtering apparatus.
Electron beam exposure: the pattern on the layout is written onto the substrate using an electron beam direct writing apparatus.
And (3) developing: and soaking the exposed wafer in TMAH solution for 2 minutes, taking out the wafer, and soaking the wafer in deionized water for 1 minute to remove the redundant developing solution.
Etching: an inductively coupled plasma etch System (plasmaPro System 100ICP180) was used to etch away portions of the unwritten structures. Finally obtaining a super-structure surface sample with a designed structure.
It should be noted that, in some embodiments, the method for designing and manufacturing an image-integrated super-structured surface further includes extracting image information, specifically:
referring to fig. 5, a spatial light path is constructed, laser with specific wavelength, polarization and incidence angle is incident on the surface of the super structure from one side of the quartz substrate, and a light field component which is orthogonal to the incident polarization and is emitted along the z axis is extracted by using the combination of the quarter-wave plate and the linear polarizer. Finally, the imaging surface (structural surface or holographic surface) of the sample is projected onto the CCD by a lens group, and the formed image is observed.
In summary, the embodiment of the present application provides a structural unit in which three nano-pillars with the same size are arranged in the x direction, and the structural parameters determining the state of the unit are divided into two categories. Through the nano-column at the fixed center and the associated setting of the difference value of the x coordinate and the rotation angle of the left nano-column and the right nano-column relative to the middle nano-column, the pixel can present 3 groups of independent intensities (amplitudes) under three groups of different incidence conditions, and further the integration of 3 printed images and 1 holographic image on the surface of the single-layer super-structure can be realized.
In alternative embodiments, the functions/acts noted in the block diagrams may occur out of the order noted in the operational illustrations. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality/acts involved. Furthermore, the embodiments presented and described in the flow charts of the present invention are provided by way of example in order to provide a more thorough understanding of the technology. The disclosed methods are not limited to the operations and logic flows presented herein. Alternative embodiments are contemplated in which the order of various operations is changed and in which sub-operations described as part of larger operations are performed independently.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
While the preferred embodiments of the present invention have been illustrated and described, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A method of designing and manufacturing an image integrated microstructured surface, comprising:
acquiring three printed images and a holographic image, and setting the three printed images to be the same in size and resolution;
presetting incidence conditions of three groups of incident light fields;
according to the incidence conditions, combining the pixel intensities of the first target positions of the three printed images, and determining the intensities of three groups of emergent light fields corresponding to the three groups of incident light fields at the second target position of the super-structure surface;
determining a first setting parameter of the nano-pillars in the nanostructure surface nano-units according to the intensities of the three groups of emergent light fields and by combining the incident conditions of the three groups of incident light fields;
determining a second setting parameter of the nano-pillars in the nanostructure surface nano-units according to the incident conditions of the first group of incident light fields and by combining the phase control of the pair of holographic images;
and finishing the presetting of the surface of the super-structure according to the first setting parameter and the second setting parameter.
2. The method of claim 1, wherein the predetermined three sets of incident light fields have at least one of:
presetting the wavelengths of the three groups of incident light fields;
presetting the incidence angles of the three groups of incident light fields;
the polarization of the three sets of incident light fields is preset.
3. The method according to claim 2, wherein determining intensities of three sets of emergent light fields corresponding to the three sets of incident light fields at the second target position of the super-structured surface according to the incident conditions and in combination with pixel intensities of the first target positions of the three printed images comprises:
determining the intensity of the emergent light field according to the incident condition and by combining an intensity expression of the emergent light field, wherein the intensity expression of the emergent light field is as follows:
I(θ1,σ1,λ1)＝[1+cos(2δ1)+cos(2δ2)]2+[sin(2δ1)+sin(2δ2)]2，
where θ represents the incident angle of the incident light field, σ represents the polarization of the incident light field, λ represents the wavelength of the incident light field, and (θ)1,σ1,λ1) Representing a first set of incident conditions, (θ)2,σ2,λ2) Representing a second set of incident conditions, (θ)3,σ3,λ3) Denotes a third set of incidence conditions, I (θ)1,σ1,λ1) Representing the intensity of the first set of emergent light fields, I (theta)2,σ2,λ2) Representing the intensity of the emergent light field of the second group, I (theta)3,σ3,λ3) Representing the intensity of the emergent light field of the third group, k represents the kth nano-column in the nano-unit, k is 1 to represent the middle nano-column, and deltakRepresenting the difference between the angle between the (k + 1) th nanopillar and the x-axis and the angle between the middle nanopillar and the x-axis in the nano unit, dkThe difference between the abscissa of the (k + 1) th nanopillar in the nanocell and the abscissa of the middle nanopillar is expressed.
4. The method of claim 1, wherein the determining the first setting parameters of the nano-pillars of the nano-elements of the super-structured surface comprises at least one of:
determining the difference value of the included angle between the left side nano column and the x axis in the nanostructure surface nano unit and the included angle between the middle nano column and the x axis;
determining the difference value of the included angle between the right-side nano column and the x axis in the nanostructure surface nano unit and the included angle between the middle nano column and the x axis;
determining the difference value between the abscissa of the left-side nano-pillar and the abscissa of the middle nano-pillar in the nanostructure surface nano-unit;
and determining the difference value of the abscissa of the right-side nano-pillar and the abscissa of the middle nano-pillar in the super-structure surface nano-unit.
5. The method of claim 1, wherein the determining the second setting parameters of the nano-pillars of the nano-elements of the super-structured surface comprises at least one of:
determining the included angle between the nano column in the middle of the nanostructure surface nano unit and the x axis;
and determining the abscissa of the nano-pillar in the middle of the nanostructure surface nano-unit.
6. A method of image integrated microstructured surface design and manufacturing according to claim 1, further comprising:
obtaining an SOI (silicon on insulator) sheet and a quartz sheet, and carrying out first treatment on the SOI sheet and the quartz sheet;
growing a silicon oxide protective layer on the upper layer of the SOI chip by using inductive coupling;
bonding the quartz wafer to the top layer of the SOI wafer to obtain a transfer wafer;
thinning according to the transfer sheet to obtain a monocrystalline silicon substrate;
performing second treatment according to the monocrystalline silicon substrate;
performing pattern writing operation of the target layout according to the monocrystalline silicon substrate after the second treatment;
and carrying out third treatment according to the monocrystalline silicon substrate after the pattern writing operation to obtain the image integrated super-structure surface.
7. The method of claim 6, wherein the first processing of the SOI wafer and the quartz wafer comprises at least one of:
soaking the SOI sheet and the quartz sheet;
carrying out water passing operation on the SOI sheet and the quartz sheet;
carrying out ultrasonic operation on the SOI sheet and the quartz sheet;
and drying the SOI sheet and the quartz sheet.
8. A method of image integrated super-textured surface design and fabrication as claimed in claim 6, wherein said second processing from said single crystal silicon substrate comprises at least one of:
carrying out spin coating operation on the monocrystalline silicon substrate;
and carrying out aluminum plating operation on the monocrystalline silicon substrate.
9. An image integrated meta-surface design and manufacturing method according to claim 6, wherein said single crystal silicon substrate after said pattern writing operation is subjected to a third process comprising at least one of:
carrying out development operation on the monocrystalline silicon substrate after the pattern writing operation;
and etching the monocrystalline silicon substrate after the pattern writing operation.
10. An image-integrated microstructured surface, comprising: the device comprises a monocrystalline silicon substrate, wherein a plurality of nano units are integrated on the monocrystalline silicon substrate, and each nano unit comprises three same nano columns;
the nano columns can adjust setting parameters and are used for realizing integration of a target image on the surface of the super structure;
the nano-units are repeatedly arranged in one pixel to form a nano-pixel, and the nano-pixel is used for realizing pixel integration of a target position of a target image.
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