CN114167145A - Characteristic structure of extraction medium material and extraction method thereof - Google Patents

Characteristic structure of extraction medium material and extraction method thereof Download PDF

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CN114167145A
CN114167145A CN202111484310.1A CN202111484310A CN114167145A CN 114167145 A CN114167145 A CN 114167145A CN 202111484310 A CN202111484310 A CN 202111484310A CN 114167145 A CN114167145 A CN 114167145A
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layer
resonator
dielectric material
via hole
dielectric
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隋磊
卢煜旻
朱欣恩
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Zhejiang Xinli Microelectronics Co ltd
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Shanghai Silicon Microelectronics Co ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
    • G01R27/2688—Measuring quality factor or dielectric loss, e.g. loss angle, or power factor
    • G01R27/2694—Measuring dielectric loss, e.g. loss angle, loss factor or power factor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
    • G01R27/2617—Measuring dielectric properties, e.g. constants
    • G01R27/2623—Measuring-systems or electronic circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
    • G01R27/2688—Measuring quality factor or dielectric loss, e.g. loss angle, or power factor

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Abstract

The invention discloses a characteristic structure of an extraction medium material and an extraction method thereof, the extraction method of the characteristic structure of the extraction medium material extracts the absolute dielectric constant and loss tangent of the medium material by extracting the characteristic structure of the medium material, and the extraction method comprises the following steps of S1: a U-shaped groove structure is provided at the top layer so that energy is input into the resonator through the U-shaped groove structure to generate resonance in the resonator to obtain a resonance frequency and a quality factor by measuring a reflection coefficient of the entire structure. The invention discloses a characteristic structure for extracting a dielectric material and an extraction method thereof, which extract the absolute dielectric constant and loss tangent of the dielectric material through a resonator.

Description

Characteristic structure of extraction medium material and extraction method thereof
Technical Field
The invention belongs to the technical field of extracting the characteristics of medium materials, and particularly relates to a characteristic structure of an extracted medium material and an extraction method of the characteristic structure of the extracted medium material.
Background
With the rapid iteration of wireless technology, SiP (System-in-package) is currently in operation. The SiP belongs to wafer level packaging, and a passive device and an active device can be combined together through a dielectric plate material, so that the integration level is greatly improved. But for the precise design of high frequency circuits or microwave devices the relative dielectric constant and the loss tangent of the substrate material are of crucial importance, especially in the millimeter wave range. However, manufacturers of substrate materials can only provide parameters within 10GHz, and as a result, frequency offset and other phenomena often occur in the current millimeter wave design.
The mainstream approach is to design microstrip resonators of different shapes to obtain the relative dielectric constant and loss tangent of the material. Since the parameters of a microstrip resonator depend on the thickness of the substrate material, at a particular frequency, it is often necessary to design multiple resonators for different thicknesses. Furthermore, since the field across the microstrip line is not uniform, the method is suitable for extracting the effective permittivity rather than the absolute permittivity.
Therefore, the above problems are further improved.
Disclosure of Invention
The invention mainly aims to provide a characteristic structure for extracting a dielectric material and an extraction method thereof, which are used for extracting the absolute dielectric constant and the loss tangent of the dielectric material through a resonator.
In order to achieve the above object, the present invention provides an extraction method for extracting a characteristic structure of a dielectric material, which extracts an absolute dielectric constant and a loss tangent of the dielectric material by extracting the characteristic structure of the dielectric material, comprising the steps of:
step S1: a U-shaped groove structure is arranged on the top layer, so that energy is input into the resonator through the U-shaped groove structure, resonance is generated in the resonator, and the resonance frequency and the quality factor are obtained by measuring the reflection coefficient of the whole structure;
step S2: and obtaining the dielectric constant and the loss tangent of the dielectric material through the resonance frequency and the quality factor calculation.
As a further preferable technical solution of the above technical solution, the U-shaped groove structure is located at a position where magnetic field energy of the resonator is maximum.
As a further preferable technical solution of the above technical solution, the characteristic structure of the extraction medium material further includes a medium layer and a bottom layer, the medium layer is located between the top layer and the bottom layer, wherein:
the top layer, the dielectric layer and the bottom layer are connected through a plurality of via hole structures, the diameter of each via hole structure is d, the distance between each via hole structure and each via hole structure is s, the length of the characteristic structure of the extracted dielectric material is b, and the width of the characteristic structure of the extracted dielectric material is a;
the inner wall of via hole structure is equipped with the metal connection layer, the top layer with the bottom passes through metal connection layer electrical connection, and U type groove structure is equipped with earthing terminal G and signal input part S.
As a further preferable embodiment of the above technical means, step S2 is specifically implemented as the following steps:
step S2.1: the resonator obtains the dielectric constant of the dielectric material in a preset working mode;
step S2.2: the resonator obtains the loss tangent of the dielectric material in a preset working mode.
As a further preferred embodiment of the above technical solution, step S2.1 is specifically implemented as the following steps:
step S2.1.1: (SIW) resonator in the operating mode TEmn0The following formula for the resonant frequency is:
Figure BDA0003396899810000031
wherein the resonator has a working mode of TE120I.e. m is 1, n is 2, and width aeffAnd length beffThe formula of (1) is:
Figure BDA0003396899810000032
Figure BDA0003396899810000033
and the relation among the space s between the via hole structures, the diameter d of the via hole structures, the length b of the characteristic structure of the extraction dielectric material and the width a of the characteristic structure of the extraction dielectric material satisfies:
s<2d，d<0.2a，d<0.2b；
step S2.1.2: after the resonant frequency is obtained, the dielectric constant of the dielectric material is calculated by the following formula:
Figure BDA0003396899810000034
as a further preferable technical means of the above technical means, in step S2.2, the loss tangent of the dielectric material is obtained by the following formula:
tanδ＝(f2-f3)/f1。
f1, f2, and f3 are frequencies, which are Q-value measurement methods, and the loss tangent multiplied by the Q-value is equal to 1.
In order to achieve the above object, the present invention further provides a characteristic structure of an extraction medium material, including a top layer, a medium layer and a bottom layer, the medium layer is located between the top layer and the bottom layer, wherein:
the top layer is provided with a U-shaped groove structure, so that energy is input into the resonator through the U-shaped groove structure, resonance is generated in the resonator, resonance frequency and quality factor are obtained by measuring the reflection coefficient of the whole structure, and the dielectric constant and loss tangent of the dielectric material are obtained by calculating the resonance frequency and the quality factor;
the U-shaped groove structure is positioned at the position where the magnetic field energy of the resonator is maximum;
the top layer, the dielectric layer and the bottom layer are connected through a plurality of via hole structures, the diameter of each via hole structure is d, the distance between each via hole structure and each via hole structure is s, the length of the characteristic structure of the extracted dielectric material is b, and the width of the characteristic structure of the extracted dielectric material is a;
the inner wall of via hole structure is equipped with the metal connection layer, the top layer with the bottom passes through metal connection layer electrical connection, and U type groove structure is equipped with earthing terminal G and signal input part S.
The invention has the beneficial effects that:
1. the result is more accurate, the error is small, and the dielectric constant obtained is the absolute dielectric constant rather than the equivalent dielectric constant.
2. When the thickness is less than half wavelength, the structure is not affected by the thickness of the plate, and the absolute dielectric constant of the material can be obtained. In other words, the thickness of the dielectric plate is less than half wavelength, the structure is universal, and a new structure does not need to be redesigned.
3. Simple structure, current etching processing error, no influence to the result.
Drawings
FIG. 1 is a schematic diagram of the characteristic structure of the extraction media material and the extraction method thereof of the present invention.
Fig. 2 is a schematic view of the characteristic structure of the extraction medium material of the present invention and the loss tangent of the extraction method thereof.
The reference numerals include: the reference numerals include: 100. a top layer; 110. a via structure; 120. a U-shaped groove structure; 121. a first notch; 122. a second notch; 123. and (4) a bump.
Detailed Description
The following description is presented to disclose the invention so as to enable any person skilled in the art to practice the invention. The preferred embodiments in the following description are given by way of example only, and other obvious variations will occur to those skilled in the art. The basic principles of the invention, as defined in the following description, may be applied to other embodiments, variations, modifications, equivalents, and other technical solutions without departing from the spirit and scope of the invention.
In the preferred embodiment of the present invention, those skilled in the art should note that the resonators and copper etc. to which the present invention relates may be regarded as prior art.
Preferred embodiments.
The invention discloses an extraction method for extracting a characteristic structure of a dielectric material, which extracts the absolute dielectric constant and loss tangent of the dielectric material by extracting the characteristic structure of the dielectric material and comprises the following steps:
step S1: a U-shaped groove structure is arranged on the top layer, so that energy is input into the resonator through the U-shaped groove structure, resonance is generated in the resonator, and the resonance frequency and the quality factor are obtained by measuring the reflection coefficient of the whole structure;
step S2: and obtaining the dielectric constant and the loss tangent of the dielectric material through the resonance frequency and the quality factor calculation.
Specifically, the U-shaped groove structure is positioned at the position where the magnetic field energy of the resonator is maximum.
More specifically, the characteristic structure of the extraction medium material further comprises a medium layer and a bottom layer, the medium layer is located between the top layer and the bottom layer, wherein:
the top layer, the dielectric layer and the bottom layer are connected through a plurality of via hole structures, the diameter of each via hole structure is d, the distance between each via hole structure and each via hole structure is s, the length of the characteristic structure of the extracted dielectric material is b, and the width of the characteristic structure of the extracted dielectric material is a;
the inner wall of the via hole structure is provided with a metal connecting layer (processed in a mode of electroplating and the like), the top layer and the bottom layer are electrically connected through the metal connecting layer (used for forming a dielectric integrated waveguide, SIW), and the U-shaped groove structure is provided with a grounding end G (comprising G1 and G2) and a signal input end S.
Further, step S2 is specifically implemented as the following steps:
step S2.1: the resonator obtains the dielectric constant of the dielectric material in a preset working mode;
step S2.2: the resonator obtains the loss tangent of the dielectric material in a preset working mode.
Further, step S2.1 is embodied as the following steps:
step S2.1.1: (SIW) resonator in the operating mode TEmn0The following formula for the resonant frequency is:
Figure BDA0003396899810000061
wherein the resonator has a working mode of TE120I.e. m is 1, n is 2, and width aeffAnd length beffThe formula of (1) is:
Figure BDA0003396899810000062
Figure BDA0003396899810000063
and the relation among the space s between the via hole structures, the diameter d of the via hole structures, the length b of the characteristic structure of the extraction dielectric material and the width a of the characteristic structure of the extraction dielectric material satisfies:
s<2d，d<0.2a，d<0.2b；
step S2.1.2: after the resonant frequency is obtained, the dielectric constant of the dielectric material is calculated by the following formula:
Figure BDA0003396899810000064
preferably, in step S2.2, the loss tangent of the dielectric material is obtained by the following formula:
tanδ＝(f2-f3)/f1。
f1, f2, and f3 are frequencies, which are Q-value measurement methods, and the loss tangent multiplied by the Q-value is equal to 1.
The invention also discloses a characteristic structure for extracting the medium material, which comprises a top layer, a medium layer and a bottom layer, wherein the medium layer is positioned between the top layer and the bottom layer, and the characteristic structure comprises:
the top layer is provided with a U-shaped groove structure, so that energy is input into the resonator through the U-shaped groove structure, resonance is generated in the resonator, resonance frequency and quality factor are obtained by measuring the reflection coefficient of the whole structure, and the dielectric constant and loss tangent of the dielectric material are obtained by calculating the resonance frequency and the quality factor;
the U-shaped groove structure is positioned at the position where the magnetic field energy of the resonator is maximum;
the top layer 100, the dielectric layer and the bottom layer are connected through a plurality of via hole structures 110, the diameter of each via hole structure is d, the distance between each via hole structure and each via hole structure is s, the length of each characteristic structure for extracting the dielectric material is b, and the width of each characteristic structure for extracting the dielectric material is a;
the inner wall of the via hole structure is provided with a metal connecting layer (processed in modes of electroplating and the like), the top layer and the bottom layer are electrically connected through the metal connecting layer (used for forming a dielectric integrated waveguide (SIW), and the U-shaped groove structure is provided with a grounding end G and a signal input end S.
Preferably, the present invention comprises a top layer 100, a dielectric layer and a bottom layer, the dielectric layer being located between the top layer 100 and the bottom layer, wherein:
the top layer 100, the dielectric layer and the bottom layer are connected through a plurality of via structures 110, the via structures 110 are arranged through a preset diameter and a preset distance, a metal connecting layer (including electroplating and other processing) is arranged on the inner wall of the via structures 110, and the top layer 100 and the bottom layer are electrically connected through the metal connecting layer (used for forming a dielectric integrated waveguide, SIW, substrate integrated waveguide);
the top layer 100 is provided with a U-shaped groove structure 120, the U-shaped groove structure 120 includes a first groove 121 and a second groove 122, the first groove 121 is communicated with the second groove 122, the first groove 121 is provided with a first ground terminal G1 and the second groove 122 is provided with a second ground terminal G2, a bump 123 is provided between the first groove 121 and the second groove 122, the bump 123 is a short-circuit microstrip line, the bump 123 is provided with a signal input terminal S, and the signal input terminal S is connected with a resonator.
Preferably, the U-shaped slot structure is located where the magnetic field energy of the resonator is greatest.
Specifically, the diameter and the pitch of the via structures 110 are the same
More specifically, the top layer is a copper material and has a thickness of 35 um.
Further, the thickness of dielectric layer is 0.254mm, the bottom is the copper product, and thickness is 35 um.
The principle of the invention is as follows:
two-layer PCB structure. Top (Top layer), material: copper; the thickness is 35 um; dielectric layer, material: rogers4350B, thickness 0.254 mm; bottom, material: copper, thickness 35 um; the top layer and the bottom layer are connected by a via.
And a U-shaped groove structure is formed on the Top layer. As shown in particular in figure 1.
The diameter of the vias is denoted by d, the spacing between the vias is denoted by s, the length of the structure is denoted by b, and the width is denoted by a.
In the figure, G denotes a ground terminal, and S denotes a signal input terminal.
Energy is input into the resonator from the U-shaped groove, resonance is generated in the resonator, the resonance frequency and the quality factor are obtained by measuring the reflection coefficient of the whole structure, and the dielectric constant and the loss tangent of the material can be obtained through numerical calculation.
Wherein the position of the U-shaped slot requires the maximum magnetic field energy in the resonator:
SIW resonator operating mode TEmn0Formula for the resonant frequency of:
Figure BDA0003396899810000081
the resonator designed by the invention works in the mode of TE120I.e., m is 1 and n is 2.
Wherein:
Figure BDA0003396899810000091
the width is consistent with the length formula, and b can be obtained by only changing a into beff
Wherein s, d and a need to satisfy the following relationship:
s is less than 2d, d is less than 0.2a (the width is d is less than 0.2 b).
After the resonant frequency is obtained by testing, the dielectric constant of the material can be calculated according to the following formula
Figure BDA0003396899810000092
Wherein m is 1 and n is 2.
Feeding mode the present invention uses a U-slot feeding as shown in fig. 1.
The loss tangent is calculated by the formula:
tanδ＝(f2-f3)/f1；
FIG. 2 shows the principle of the Q value measurement method. The product of the loss tangent and the Q value is equal to 1, tan δ is (f2-f3)/f1, and f1, f2 and f3 are frequencies.
For example, d is 0.254mm, s is 0.43mm, a is 4.3mm, b is 10.75mm, feed structure: the line width of S is 0.15mm, and the distance between G is 0.28 mm. A plate material Rogers4350B, a simulated dielectric constant of 3.66 and a loss tangent of 0.004;
where f 1-25.05 GHz, f 2-23.99 GHz, f 3-24.12 GHz, tan δ -0.005 was calculated,
calculating the relative dielectric constant epsilon r as 24.04GHz according to a formula;
among them, the reason for the large loss tangent is that the metal loss is not considered, but the metal is not necessarily smooth but has a certain roughness due to the actual etching process, and the present invention does not consider this because of the randomness of the roughness.
It should be noted that the technical features of the resonator, the copper, and the like, which are referred to in the present patent application, should be regarded as the prior art, and the specific structure, the operation principle, and the control manner and the spatial arrangement manner that may be referred to in the present patent application may be implemented by conventional selection in the art, and should not be regarded as the invention point of the present patent, and the present patent is not further specifically described in detail.
It will be apparent to those skilled in the art that modifications and equivalents may be made in the embodiments and/or portions thereof without departing from the spirit and scope of the present invention.

Claims (7)

1. A method for extracting a characteristic structure of a dielectric material, which is used for extracting the absolute dielectric constant and loss tangent of the dielectric material, is characterized by comprising the following steps:
step S1: a U-shaped groove structure is arranged on the top layer, so that energy is input into the resonator through the U-shaped groove structure, resonance is generated in the resonator, and the resonance frequency and the quality factor are obtained by measuring the reflection coefficient of the whole structure;
step S2: and obtaining the dielectric constant and the loss tangent of the dielectric material through the resonance frequency and the quality factor calculation.
2. The method of claim 1, wherein the U-shaped groove structure is located where the magnetic field energy of the resonator is maximum.
3. The method of claim 2, wherein the feature of the extraction medium further comprises a dielectric layer and a bottom layer, the dielectric layer being disposed between the top layer and the bottom layer, wherein:
the top layer, the dielectric layer and the bottom layer are connected through a plurality of via hole structures, the diameter of each via hole structure is d, the distance between each via hole structure and each via hole structure is s, the length of the characteristic structure of the extracted dielectric material is b, and the width of the characteristic structure of the extracted dielectric material is a;
the inner wall of via hole structure is equipped with the metal connection layer, the top layer with the bottom passes through metal connection layer electrical connection, and U type groove structure is equipped with earthing terminal G and signal input part S.
4. The method as claimed in claim 3, wherein the step S2 is implemented as the following steps:
step S2.1: the resonator obtains the dielectric constant of the dielectric material in a preset working mode;
step S2.2: the resonator obtains the loss tangent of the dielectric material in a preset working mode.
5. The method of claim 4, wherein step S2.1 is embodied as the steps of:
step S2.1.1: the resonator being in the operating mode TEmn0The following formula for the resonant frequency is:
Figure FDA0003396899800000021
wherein the resonator has a working mode of TE120I.e. m is 1, n is 2, and width aeffAnd length beffThe formula of (1) is:
Figure FDA0003396899800000022
Figure FDA0003396899800000023
and the relation among the space s between the via hole structures, the diameter d of the via hole structures, the length b of the characteristic structure of the extraction dielectric material and the width a of the characteristic structure of the extraction dielectric material satisfies:
s<2d，d<0.2a，d<0.2b；
step S2.1.2: after the resonant frequency is obtained, the dielectric constant of the dielectric material is calculated by the following formula:
Figure FDA0003396899800000024
6. the method according to claim 5, wherein in step S2.2, the loss tangent of the dielectric material is obtained by the following formula:
tanδ＝(f2-f3)/f1。
7. a characteristic structure of an extraction medium material for implementing an extraction method of a characteristic structure of an extraction medium material according to any one of claims 1 to 6, characterized by comprising a top layer, a medium layer and a bottom layer, the medium layer being located between the top layer and the bottom layer, wherein:
the top layer is provided with a U-shaped groove structure, so that energy is input into the resonator through the U-shaped groove structure, resonance is generated in the resonator, resonance frequency and quality factor are obtained by measuring the reflection coefficient of the whole structure, and the dielectric constant and loss tangent of the dielectric material are obtained by calculating the resonance frequency and the quality factor;
the U-shaped groove structure is positioned at the position where the magnetic field energy of the resonator is maximum;
the top layer, the dielectric layer and the bottom layer are connected through a plurality of via hole structures, the diameter of each via hole structure is d, the distance between each via hole structure and each via hole structure is s, the length of the characteristic structure of the extracted dielectric material is b, and the width of the characteristic structure of the extracted dielectric material is a;
the inner wall of via hole structure is equipped with the metal connection layer, the top layer with the bottom passes through metal connection layer electrical connection, and U type groove structure is equipped with earthing terminal G and signal input part S.
CN202111484310.1A 2021-12-07 2021-12-07 Characteristic structure of extraction medium material and extraction method thereof Pending CN114167145A (en)

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Publication number Priority date Publication date Assignee Title
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CN103956542A (en) * 2014-04-18 2014-07-30 华南理工大学 Broadband substrate integration waveguide filter adopting U-shaped groove line
CN110531164A (en) * 2019-08-20 2019-12-03 杭州电子科技大学 The microwave remote sensor for Measuring Dielectric Constant based on SIW-CSRR

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Publication number Priority date Publication date Assignee Title
CN103901278A (en) * 2014-03-28 2014-07-02 电子科技大学 Method for measuring material complex permittivity based on substrate integrated waveguide round resonant cavities
CN103956542A (en) * 2014-04-18 2014-07-30 华南理工大学 Broadband substrate integration waveguide filter adopting U-shaped groove line
CN110531164A (en) * 2019-08-20 2019-12-03 杭州电子科技大学 The microwave remote sensor for Measuring Dielectric Constant based on SIW-CSRR

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