CN114156355B - 堆叠状的单片的多结太阳能电池单元 - Google Patents
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- 239000004065 semiconductor Substances 0.000 claims abstract description 56
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 9
- 230000000737 periodic effect Effects 0.000 claims abstract description 4
- 230000006866 deterioration Effects 0.000 claims description 9
- 239000002019 doping agent Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
堆叠状的单片的多结太阳能电池单元，其具有至少四个子电池单元，其中，带隙从第一子电池单元开始在第四子电池单元的方向上变得更大，每个子电池单元具有n掺杂的发射极和p掺杂的基极，其分别具有锗或由锗组成，所有跟随的子电池单元分别具有至少一种元素周期表的第III主族和第V主族的元素，在每两个子电池单元之间分别布置有具有pn结的隧道二极管，在所述第一子电池单元之后跟随的所有子电池单元以彼此晶格匹配的方式构造，在第一子电池单元与第二子电池单元之间布置具有多个掺杂半导体层的半导体镜，半导体层具有交替不同的折射率，其分别n掺杂地构造并且分别具有最多5·1018cm‑3的掺杂剂浓度，半导体镜布置在第一子电池单元与第一隧道二极管之间。
Description
技术领域
本发明涉及一种堆叠状的单片的多结太阳能电池单元。
背景技术
例如从DE102005000767A1中已知一种堆叠状的单片的多结太阳能电池单元。多结太阳能电池单元包括第一锗子电池单元以及至少两个其他子电池单元和至少一个半导体镜，其中，该半导体镜具有多个层，这些层具有至少彼此不同的折射率，以及在布置在其上方的一个或多个子电池单元的吸收范围的至少一部分中具有高的反射率，以及在布置在半导体镜下方的子电池单元的光谱吸收范围中对于辐射具有高的透射率。
从DE102015016047A1中已知一种堆叠状的单片的III-V族多结太阳能电池单元，其具有第一锗子电池单元和跟随的具有铟和磷的第二子电池单元。如果第一子电池单元和第二子电池单元具有不同的晶格常数，则多结太阳能电池单元包括布置在第一子电池单元与第二子电池单元之间的变质缓冲层。
从DE102015016822A1中已知一种类似的多结太阳能电池单元。
从EP2251912A1中已知一种堆叠状的变质的多结太阳能电池单元，其中，布置在子电池单元之间的隧道二极管分别具有压缩预紧的第一层和拉伸预紧的第二层，从而每个隧道二极管在整体上以电压补偿的方式实施。
发明内容
在此背景下，本发明的任务在于，说明一种扩展现有技术的设备。
该任务通过根据本发明的堆叠状的单片的多结太阳能电池单元解决。本发明的有利构型是优选的实施方式。
作为本发明的主题，提供一种堆叠状的单片的多结太阳能电池单元，其以以下提及的顺序彼此相继地具有第一子电池单元、第二子电池单元、第三子电池单元和至少一个第四子电池单元，其中，带隙从第一子电池单元开始朝第四子电池单元的方向逐子电池单元地变得更大。
每个子电池单元具有n掺杂的发射极和p掺杂的基极，其中，第一子电池单元的发射极和基极分别具有锗或由锗组成，并且在第一子电池单元之后跟随的所有子电池单元分别具有元素周期表的第III主族的至少一种元素和元素周期表的第V主族的至少一种元素。
在各两个子电池单元之间分别布置有一个具有p-n结的隧道二极管。
在第一子电池单元之后跟随的所有子电池单元都以彼此晶格匹配的方式实施。
在第一子电池单元与跟随的第二子电池单元之间布置有半导体镜，该半导体镜具有多个n掺杂的半导体层，这些半导体层具有交替地不同的折射率。
在第一子电池单元与半导体镜之间布置有n掺杂的变质缓冲层，其中，该变质缓冲层具有至少四个阶梯层(Stufen-Schicht)和至少一个过剩层
变质缓冲层中的至少两个具有小于8·1017cm-3的掺杂。
可以理解，隧道二极管布置在两个子电池单元之间。
应当注意，堆叠状多结太阳能电池单元的III-V族子电池单元和其他层在Ge子电池单元、例如Ge衬底上依次外延生长。
还应注意，以术语“过剩层”表示变质缓冲层的如下层：该层具有比第一子电池单元的晶格常数更大的晶格常数并且具有比第二子电池单元或跟随的子电池单元的晶格常数更大的晶格常数。
在当前情况下，涉及一种正置生长(aufrecht gewachsene)的变质多结太阳能电池单元，即所谓的UMM太阳能电池单元布置，而没有半导体键合或晶片键合。换句话说，多结电池单元的所有子电池单元依次以外延的方式在MOVPE设备中彼此上下地生长，并且不是由两个子堆叠接合而成。
第一子电池单元具有最小的带隙，并且在总共四个子电池单元的情况下第四子电池单元具有最大的带隙。在多于四个子电池单元的情况下，最上部的子电池单元相应地具有最大的带隙。
优选地，所有子电池单元构造为具有n在p上方的结构(n-über-p-Struktur)，因此在p-掺杂的基极上方具有n-掺杂的发射极。
令人惊讶的是，随着n掺杂的变质缓冲层的层中的掺杂降低到1·1018cm-3的值以下，多结太阳能电池单元的效率增加。
目前可以这样认为：在1·1018cm-3以上的范围中选择变质缓冲层的掺杂对于电导率是有利的。
此外，为了在给定的子电池单元厚度下提高子电池单元的辐射稳定性，半导体镜通常直接布置在相关子电池单元的下方，即直接布置在子电池单元的p掺杂的基极下方，并且因此同样实施成p掺杂。
可以理解，半导体镜具有多个由薄层组成的周期，其中，这些薄层交替地具有低折射率和高折射率。
优选地，一个周期包括至少两个或三个层，其中，半导体镜包括至少十个层，即至少5个周期。在一种扩展方案中，半导体镜包括至少10个或至少15个周期。
与此不同，将隧道二极管布置在半导体镜与其上方跟随的子电池单元(即第二子电池单元)之间，从而半导体镜是n掺杂的。
令人惊讶地显示出，在将隧道二极管布置在p掺杂的基极与半导体镜之间时，半导体镜在不变地良好的反射特性的情况下具有相对于位于其下方的子电池单元明显更高的透射，并且可以提高多结电池单元的效率。
由半导体镜的层的n掺杂结合低n掺杂的变质缓冲层组成的布置导致Ge子电池单元中光电流的增加。
优选地，变质缓冲层具有至少三个半导体层或恰好四个层或恰好五个层或者恰好六个层或优选地七个层或恰好八个层或恰好九个层。可以理解，过剩层构造为变质缓冲层的一部分。
优选地，变形缓冲器具有逐渐地、例如以阶梯状或斜坡状的方式从第一晶格常数值变为第二晶格常数值的晶格常数。
在一种扩展方案中，变质缓冲层的缓冲层中的至少两个具有小于5·1017cm-3或小于3·1017cm-3或小于1·1017cm-3或小于7·1016cm-3或小于4·1016cm-3的掺杂。
优选地，变质缓冲层的半导体层通常包括InGaAs或由InGaAs组成。在一种实施方式中，过剩层包括AlInGaAs或由AlInGaAs组成，以便增加用于位于其下方的Ge电池单元的透明度。
应当注意，化学计量逐变质缓冲层的层地变化，以便逐层地改变晶格常数。优选地，铟的浓度逐层地在2％至5％之间的范围中变化。
在一种实施方式中，变质缓冲层的层在掺杂浓度的最大水平方面差异不超过两倍。
在一种扩展方案中，变质缓冲层包括第二过剩层。
在一种实施方式中，半导体镜的层具有小于1·1019cm-3或小于5·1018cm-3或小于3·1018cm-3或小于1.5·1018cm-3或小于8·1017cm-3或小于5·1017cm-3的掺杂。
在一种实施方式中，半导体镜和变质缓冲层的层具有硅或碲作为掺杂剂。
在一种扩展方案中，半导体镜的具有较低折射率的层与半导体镜的具有较高折射率的层相比具有较低的掺杂和/或不同的掺杂剂。
在一种实施方式中，半导体镜的具有较低折射率的层的掺杂是所述半导体镜的具有较高折射率的层的掺杂的至多二分之一。
优选地，半导体镜的具有较低折射率的层由AlInAs组成或包括AlInAs。在一种实施方式中，半导体镜的具有较低折射率的层不具有镓。
在一种扩展方案中，半导体镜的层具有大于5·1016cm-3或大于1·1017cm-3或大于5·1017cm-3的掺杂。
在一种实施方式中，变质缓冲层中的至少两个或所有变质缓冲层具有比半导体镜的层的掺杂更小的掺杂。
在另一扩展方案中，多结太阳能电池单元具有第五子电池单元。
在另一实施方式中，第二子电池单元具有InGaAs或由InGaAs组成。
替代地或补充地，第三子电池单元具有GaAs或AlInGaAs或InGaAsP或由GaAs或AlInGaAs或InGaAsP组成。
在一种实施方式中，第四子电池单元具有AlInGaP或InAlP或由AlInGaP或InAlP组成。
以术语“具有”表示，相应的子电池单元除了所提及的材料之外还具有其他材料，在实施方式中尤其具有第III主族和/或第V主族的其他元素。与此不同，术语“由……组成”表示，太阳能电池单元基本上由所提及的材料组成，尤其不具有第III主族和/或第V主族的其他元素。
可以理解，除了所提及的材料之外，每个太阳能电池单元附加地具有掺杂剂(例如碲或硅)并且可能还具有杂质。
在一种扩展方案中，多结太阳能电池单元具有第五子电池单元，其中，第五子电池单元布置在第四子电池单元与第三子电池单元之间并且具有InGaP或由InGaP组成。在一种扩展方案中，第五子电池单元构造在第四子电池单元上。
在一种扩展方案中，多结太阳能电池单元具有恰好四个子电池单元，其中，第四子电池单元具有2.0eV与1.8eV之间的带隙，第三子电池单元具有1.4eV与1.6eV之间的带隙，第二子电池单元具有1eV与1.2eV之间的带隙，并且第一子电池单元具有0.6eV与0.7eV之间的带隙。
替代地，子电池单元中的一个或多个构造为异质子电池单元(Hetero-Teilzellen)。在此，发射极和基极具有不同的元素组成。然而，可以理解，发射极和基极的晶格常数在相应的子电池单元中是相同的。
附图说明
下面参照附图更详细地阐述本发明。在此，同类的部件标有相同的标记。所示出的实施方式是高度示意性的，即距离以及横向和垂直延伸不是按比例的，并且除非另有说明，否则彼此之间也没有可推导出的几何关系。在此示出：
图1示出堆叠状的单片的多结太阳能电池单元的第一实施方式的视图；
图2示出第二实施方式的视图。
具体实施方式
图1的示图示出具有四个以堆叠状布置的单片的子电池单元SC1、SC2、SC3和SC4的多结太阳能电池单元的示意性横截面。
每个子电池单元具有p掺杂的基极B1、B2、B3或B4和n掺杂的发射极E1、E2、E3或E4，其中，第一子电池单元SC1的发射极E1和基极B1具有锗或由锗组成，并且在第一子电池单元SC1之后跟随的子电池单元SC2、SC3和SC4的发射极E2、E3和E4以及基极B2、B3、B4分别具有至少一种第III主族元素和至少一种第V主族元素。
其他子电池单元SC2、SC3和SC4中的每个要么构造为同质子电池单元要么构造为异质子电池单元。
子电池单元SC1、SC2、SC3和SC4具有从第一子电池单元SC1朝第四子电池单元SC4的方向逐子电池单元地增大的带隙。
第二、第三和第四子电池单元SC2、SC3和SC4以彼此晶格匹配的方式实施，而第一子电池单元SC1具有与其他子电池单元SC2、SC3和SC4的晶格常数不同的晶格常数。
为了补偿晶格常数方面的差异，堆叠状的多结太阳能电池单元附加地具有变质缓冲层MP，其具有沿着变质缓冲层MP的高度进行变化的晶格常数。
变质缓冲层MP布置在第一子电池单元SC1的上侧与半导体镜BR的下侧之间并且是n掺杂的。变质缓冲层MP的晶格常数例如沿着该高度以斜坡状或阶梯状的方式从对应于第一子电池单元SC1的晶格常数的值变至对应于第二子电池单元SC2的晶格常数的值，并且具有过剩层，从而晶格常数逐层地首先增大并且然后再次减小到第二子电池单元SC2的晶格常数的值。
变质缓冲层MP是n掺杂的并且包括至少四个阶梯层和至少一个过剩层。变质缓冲层中的至少两个具有小于8·1017cm-3的掺杂。
优选地，变质缓冲层的层彼此之间的掺杂方面的差异小于2倍。
在第一子电池单元SC1的上侧上布置有与第一子电池单元SC1的发射极E1邻接的半导体镜BR。半导体镜BR具有多个n掺杂的半导体层，所述半导体层具有交替地不同的折射率和分别最高1·1019cm-3或最高5·1018cm-3的掺杂剂浓度。
在半导体镜BR的上侧上并且与第二子电池单元SC2的基极B2邻接地布置有第一隧道二极管TD1，该第一隧道二极管具有与半导体镜邻接的n掺杂层和与第二子电池单元SC2邻接的p掺杂层。
第二隧道二极管TD2布置在第二子电池单元SC2与第三子电池单元SC3之间，并且第三隧道二极管TD3布置在第三子电池单元SC3与第四子电池单元SC4之间，其中，每个隧道二极管TD1、TD2和TD3分别具有一个pn结(即n掺杂层和p掺杂层)。
在图2的示图中示出另一实施方式。下面仅阐述与图1的示图的不同之处。
多结太阳能电池单元构造为变质的五结太阳能电池单元，其中，第二子电池单元SC2、第三子电池单元SC3、第四子电池单元SC4和第五子电池单元SC5以彼此晶格匹配的方式实施，其中，第一子电池单元SC1具有与跟随的子电池单元SC2、SC3、SC4和SC5的晶格常数不同的晶格常数。
晶格常数的差异借助布置在第一子电池单元SC1与半导体镜BR之间的变质缓冲层MP来补偿。
在一种未示出的实施方式中，第五子电池单元布置在第四子电池单元与第三子电池单元之间并且具有InGaP或由InGaP组成。
Claims (14)
1.一种堆叠状的单片的多结太阳能电池单元，所述堆叠状的单片的多结太阳能电池单元以以下提及的顺序彼此相继地具有第一子电池单元(SC1)、第二子电池单元(SC2)、第三子电池单元(SC3)和至少一个第四子电池单元(SC4)，其中，
带隙从所述第一子电池单元(SC1)开始朝所述第四子电池单元(SC4)的方向逐子电池单元地变得更大，
每个子电池单元(SC1，SC2，SC3，SC4)具有n掺杂的发射极(E1，E2，E3，E4)和p掺杂的基极(B1，B2，B3，B4)，
所述第一子电池单元(SC1)的发射极(E1)和基极(B1)分别具有锗或由锗组成，
在所述第一子电池单元(SC1)之后跟随的所有子电池单元(SC2，SC3，SC4)分别具有元素周期表的第III主族和第V主族的至少一种元素，
在各两个子电池单元(SC1，SC2，SC3，SC4)之间分别布置有一个具有p-n结的隧道二极管(TD1，TD2，TD3)，
在所述第一子电池单元(SC1)之后跟随的所有子电池单元(SC2，SC3，SC4)以彼此晶格匹配的方式构造，
在所述第一子电池单元(SC1)与跟随的第二子电池单元(SC2)之间布置有n掺杂的半导体镜(BR)，所述半导体镜具有多个掺杂的半导体层，所述半导体层具有交替地不同的折射率，
在所述第一子电池单元(SC1)与所述半导体镜(BR)之间布置有n掺杂的变质缓冲层(MP)，其中，所述变质缓冲层具有至少四个阶梯层和至少一个过剩层，
其特征在于，
所述n掺杂的变质缓冲层的掺杂小于1·1018cm-3，并且所述变质缓冲层中的至少两个变质缓冲层具有小于8·1017cm-3的掺杂，
在所述第二子电池单元(SC2)与所述半导体镜(BR)之间布置有隧道二极管(TD1)，从而所述变质缓冲层(MP)、所述半导体镜(BR)、所述隧道二极管(TD1)和所述第二子电池单元(SC2)以以上所提及的顺序形成在所述第一子电池单元(SC1)上。
2.根据权利要求1所述的多结太阳能电池单元，其特征在于，所述变质缓冲层中的至少两个变质缓冲层具有小于5·1017cm-3的掺杂。
3.根据权利要求1或2所述的多结太阳能电池单元，其特征在于，所有变质缓冲层在其掺杂方面差异不超过2倍。
4.根据以上权利要求1或2所述的多结太阳能电池单元，其特征在于，所述变质缓冲层具有至少两个过剩层。
5.根据权利要求1或2所述的多结太阳能电池单元，其特征在于，所述半导体镜(BR)的层具有小于1·1019cm-3的掺杂。
6.根据权利要求1或2所述的多结太阳能电池单元，其特征在于，所述半导体镜(BR)和所述变质缓冲层具有硅或碲作为掺杂剂。
7.根据权利要求1或2所述的多结太阳能电池单元，其特征在于，与所述半导体镜的具有较高折射率的层相比，所述半导体镜(BR)的具有较低折射率的层具有较低的掺杂和/或不同的掺杂剂。
8.根据权利要求7所述的多结太阳能电池单元，其特征在于，所述半导体镜(BR)的具有较低折射率的层的掺杂是所述半导体镜的具有较高折射率的层的掺杂的至多二分之一。
9.根据权利要求7所述的多结太阳能电池单元，其特征在于，所述半导体镜(BR)具有较低折射率的层具有AlInAs或由AlInAs组成。
10.根据权利要求7所述的多结太阳能电池单元，其特征在于，所述半导体镜(BR)具有较低折射率的层不具有镓。
11.根据权利要求7所述的多结太阳能电池单元，其特征在于，所述半导体镜(BR)的层具有大于5·1016cm-3的掺杂。
12.根据权利要求1或2所述的多结太阳能电池单元，其特征在于，与所述半导体镜(BR)的层的掺杂相比，所述变质缓冲层中的至少两个变质缓冲层具有更小的掺杂。
13.根据权利要求1或2所述的多结太阳能电池单元，其特征在于，设置有恰好四个子电池单元，其中，所述第四子电池单元具有2.0eV与1.8eV之间的带隙，且所述第三子电池单元具有1.4eV与1.6eV之间的带隙，且所述第二子电池单元具有1eV与1.2eV之间的带隙，并且所述第一子电池单元具有0.6eV与0.7eV之间的带隙。
14.根据权利要求13所述的多结太阳能电池单元，其特征在于，所述多结太阳能电池单元具有第五子电池单元(SC5)。
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