CN114152637A - Hard silicon carbide material punching detection device and method - Google Patents

Hard silicon carbide material punching detection device and method Download PDF

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CN114152637A
CN114152637A CN202210115291.3A CN202210115291A CN114152637A CN 114152637 A CN114152637 A CN 114152637A CN 202210115291 A CN202210115291 A CN 202210115291A CN 114152637 A CN114152637 A CN 114152637A
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detection
hole
silicon carbide
detector
hard silicon
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CN114152637B (en
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蒋旭霞
朱佰喜
薛抗美
邹明舊
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Dongguan Zhi Orange Semiconductor Material Co ltd
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/04Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
    • G01N23/046Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material using tomography, e.g. computed tomography [CT]

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Abstract

The invention provides a punching detection device and method for a hard silicon carbide material. The method comprises the steps of dividing a detection hole into a plurality of detection areas according to the distance from the detection hole to a reference center by taking the geometric center of a detected product as the reference center; respectively emitting rays to a plurality of detection areas through an emitter; the ray reflected by the hole of the detection area is incident into the detector, and the detector transmits the acquired information to the processor; the processor classifies the information fed back by the detector, the image processing system stores and accumulates the projection drawing of the hole, a three-dimensional structure model of the hole in the region is reconstructed, and the positioning system transmits the spatial position to the analysis system according to the hole position information fed back by the detector; and the analysis system compares the detection hole with the design hole, judges the three-dimensional structure conforming to the design to be qualified and output, judges the non-conforming structure to be unqualified, identifies the position information of the non-conforming design hole and outputs the position information.

Description

Hard silicon carbide material punching detection device and method
Technical Field
The invention relates to the technical field of hard material punching detection, in particular to a hard silicon carbide material punching detection device and method.
Background
The silicon carbide material has the advantages of large forbidden bandwidth, high breakdown field strength, small dielectric constant and the like, and is widely applied to the field of the electronic and semiconductor industries, when the silicon carbide material is used as an etched gas distribution disc, hundreds of small holes need to be formed in the silicon carbide disc according to a specific distribution rule, if the precision of the holes does not meet the requirement or the deviation of the hole positions is generated, the gas passing through the silicon carbide disc is not uniform or the gas does not pass through the place where the gas needs to exist but does not pass through the place where the gas does not exist, the performance of the etched product is seriously influenced, and even more, the etched product cannot meet the design requirement and becomes waste products because the gas is not uniform, so the detection on the hole positions, the hole diameters and the defects in the holes of the silicon carbide material after being punched becomes more important.
The traditional optical and tactile detection mode usually only performs sampling inspection on a small number of holes due to the detection efficiency, and some devices can detect the internal defects of the holes with small diameter and hole position but cannot detect the internal defects of the deep holes, or detect the defects of the inner walls of the holes only by cutting and damaging the products.
Disclosure of Invention
The invention provides a hard silicon carbide material punching detection device and method, which are used for solving the problem that a porous hard silicon carbide material needs to simultaneously detect punching positions, punching sizes and hole inner wall defects of thousands of small holes. The specific scheme is as follows:
a method for detecting the punching of hard silicon carbide material comprises the following steps:
s1, dividing the detection hole into a plurality of detection areas by taking the geometric center of the detected product as a reference center and taking the distance from the detection hole to the reference center as a basis;
s2, the emitter emits rays to the detection areas respectively;
s3, the ray reflected by the hole of the detection area is incident into the detector, and the detector transmits the collected information to the processor;
s4, the processor classifies the information fed back by the detector, feeds back the collected hole image information to the image processing system, and feeds back the spatial information to the positioning system;
s5, the image processing system stores and accumulates the projection drawing of the hole, when the projection drawing of all holes in one region is completed, the three-dimensional structure model of the holes in the region of the completed projection drawing is reconstructed, and the generated three-dimensional structure model is fed back to the analysis system;
s6, the positioning system obtains the space position of the detection hole according to the reflected echo signal of the feedback hole position information detected by the detector, and transmits the space position to the analysis system;
and S7, the analysis system compares the generated three-dimensional structure model and the generated spatial position information of the hole with the three-dimensional structure model and the spatial position of the designed hole respectively, judges the three-dimensional structure conforming to the design to be qualified and output, judges the non-conforming to the design to be unqualified, marks the position information of the non-conforming to the design hole and outputs the position information.
Furthermore, the unit detection area is provided with a corresponding ray source.
Furthermore, the detection areas are distributed at equal intervals, and the distance between every two adjacent detection areas is adjusted according to actual measurement requirements.
Further, the output parameters of the image include aperture, aperture edge, and aperture wall parameters.
Further, the spatial orientation of the detection holes comprises the straight line position of a single detection hole to the reference center and the relative position between adjacent detection holes;
and the spatial information of the single detection hole is displayed in a three-dimensional coordinate mode.
Further, the detection device is used in a method for detecting the punching of the hard silicon carbide material, the detection device comprises an emitter, a control system, a processor and a detector,
the control system is electrically connected with the ray source and the processor;
the detector is electrically connected with the processing system, a collimator is arranged between the product to be detected and the emitter,
the centers of the optical axes of the emitted light beams of the collimator, the detector and the emitter are positioned on the same straight line.
Further, the processor is provided with an image processing module, a positioning module and an analysis module.
Furthermore, the emitter comprises a plurality of ray sources which are distributed in the emitter at equal intervals in a straight line;
the number of the ray sources is the same as the number of subareas of the detection area, and the distance between adjacent ray sources is the same as the distance between adjacent detection areas;
the ray source emits rays according to a preset rule;
and the unit of the ray source moves according to the actual detection requirement.
Furthermore, the unit ray sources rotate according to a preset sequence and move radially in the same detection area.
The beneficial effect of the invention is that,
the control system adjusts the position and the distance between the ray source and a sample to be detected;
the processor can view the 2D section images from any direction and rotate the 2D section images around a custom axis, and can view internal structures at different sections without damaging a detection workpiece;
a series of two-dimensional tomographic images of the detected workpiece can be obtained according to different transmission energies received by the detector and a certain algorithm;
the image processing system reconstructs the three-dimensional voxel model from the two-dimensional projection data;
the analysis system compares the detected product with the CAD data set corresponding to the detected product, and displays the deviation result and local annotation by using color coding, so that the deviation between the manufactured part and the target model is clear at a glance.
The invention has the following further beneficial effects: the method can obtain a completely self-defined detection report which comprises a histogram, a data table and a visual image, and can save a measurement item, an analysis process and a completely self-contained detection plan in the detection process as a template after the first sample detection is successfully completed, then input the template into a processor, and can be directly called out for measurement and analysis when the batch detection of the same part is subsequently carried out without resetting again, so that the time of repeated operation is saved.
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic flow chart illustrating a method for detecting the punching of a hard SiC material according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a punching detection apparatus for hard SiC material according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of the structure of the transmitter 2 according to the embodiment of the present invention;
FIG. 4 is a diagram illustrating a detection region division structure according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a product under inspection according to an embodiment of the present invention,
the system comprises a control system 1, a transmitter 2, a product to be detected 3, a detector 4, a processor 5, a ray source 6, a geometric center 7 and a detection hole 8.
Detailed Description
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are described herein for the purpose of illustration and explanation and not limitation.
A method for detecting the punching of hard silicon carbide material comprises the following steps:
s1, dividing the detection hole into a plurality of detection areas by taking the geometric center of the detected product as a reference center and taking the distance from the detection hole 8 to the reference center as a basis;
s2, the emitter 2 emits rays to the plurality of detection areas, respectively;
s3, the ray reflected by the hole of the detection area is incident into the detector 4, and the detector 4 transmits the collected information to the processor 5;
s4, the processor 5 classifies the information fed back by the detector 4, feeds back the collected hole image information to the image processing system, and feeds back the spatial information to the positioning system;
s5, the image processing system stores and accumulates the projection drawing of the hole, when the projection drawing of all holes in one region is completed, the three-dimensional structure model of the holes in the region of the completed projection drawing is reconstructed, and the generated three-dimensional structure model is fed back to the analysis system;
s6, the positioning system obtains the space position of the detection hole 8 according to the reflected echo signal of the feedback hole position information detected by the detector 4, and transmits the space position to the analysis system;
and S7, the analysis system compares the generated three-dimensional structure model and the generated spatial position information of the hole with the three-dimensional structure model and the spatial position of the designed hole respectively, judges the three-dimensional structure conforming to the design to be qualified and output, judges the non-conforming to the design to be unqualified, marks the position information of the non-conforming to the design hole and outputs the position information.
It should be noted that the analysis system of the present invention has beam hardening, ringing artifacts, offset and angle drift correction techniques to correct for artifacts, improve image quality,
in one embodiment of the present invention, the radiation sources 6 are disposed in the unit of the detection area.
In one embodiment of the invention, the detection areas are distributed equidistantly, and the distance between adjacent detection areas is adjusted according to actual measurement requirements.
In one embodiment of the invention, the output parameters of the image include aperture, aperture edge, and aperture wall parameters.
In one embodiment of the invention, the spatial orientation of the detection holes 8 comprises the linear position of a single detection hole 8 to the reference center and the relative position between adjacent detection holes;
the spatial information of the single detection hole 8 is displayed in a three-dimensional coordinate mode.
In one embodiment of the invention, the detection device is used in a method for detecting the punching of the hard silicon carbide material, the detection device comprises an emitter 2, a control system, a processor 5 and a detector 4,
the control system is electrically connected with the ray source 6 and the processor 5;
the detector 4 is electrically connected with the processing system, a collimator is arranged between the emitter 2 and the product 3 to be measured,
the centers of the optical axes of the emitted light beams of the collimator, the detector 4 and the emitter 2 are positioned on the same straight line.
It should be noted that the radiation source 6 is used for providing a primary light source for the detection; the detector 4 is used for collecting the light wave signals attenuated by the detected target; the control system is used for controlling the ray source 6 to emit detection beams to the detection area according to a preset program; the collimator is located between the product 3 to be measured and the emitter 2, and the optical center of the collimator is located on the light path of the emitted light of the emitter 2.
In one embodiment of the invention, the processor 5 is provided with an image processing module, a positioning module and an analysis module.
In one embodiment of the present invention, the emitter 2 includes a plurality of radiation sources 6, and the radiation sources 6 are distributed in the emitter 2 at equal intervals;
the number of the ray sources 6 is the same as the number of subareas of the detection area, and the distance between adjacent ray sources 6 is the same as the distance between adjacent detection areas;
the ray source 6 emits rays according to a preset rule;
the ray source 6 moves according to the actual detection requirement.
It should be noted that, in this embodiment, the radiation source 6 emits radiation according to a preset rule, where the preset rule is that the radiation source 6 is radially arranged in a straight line at an initial position, the position is marked as a 0 point, a hole corresponding to the 0 point in each detection circle is marked as a No. 0 hole, detection is performed from the No. 0 hole, and a preset sequence of detection is as follows: holes in the same detection area and positioned in the same detection ring rotate clockwise or anticlockwise from the hole No. 0 according to the position of the detection hole in the original design to perform sequential detection; the same detection area is positioned in holes of different detection rings, and detection is carried out according to linear increase or decrease of the distance of the straight line from the detection ring to the reference center.
In one embodiment of the invention, the radiation sources 6 are rotated in a predetermined sequence and radially moved within the same detection area.
It should be noted that each radiation source 6 corresponds to a detection area, and the unit radiation sources 6 rotate counterclockwise or clockwise according to the position sequence of the holes preset in the control system to sequentially complete the detection of the holes in the same detection circle;
when the detection from the same detection area to different detection areas with different reference centers is carried out, the radial movement of the ray source 6 corresponding to the detection area is realized through a control system;
the radial movement and the rotation of the unit ray source 6 are realized by a control system, and the mechanical connection relationship of the rotation and the movement is a conventional rotation and horizontal movement connection mode; the holes of the same detection ring are holes with the same straight line distance from the detection hole to the reference center. The processor 5, the processing system, the control system, the detector 4 and the radiation source 6 are all conventional products, and the processor 5, the processing system, the control system, the detector 4 and the radiation source 6 are all connected with a power supply in a conventional electrical connection mode.
It should be noted that, the radiation source 6 according to the present invention emits X-rays,
the working process of the invention is as follows: firstly, dividing a detection area of a product 3 to be detected, then emitting X-rays to the product 3 to be detected through a preset sequence of a control system, when high-energy photons of the X-rays pass through the product to be detected, absorbing one part of the high-energy photons, scattering the other part of the high-energy photons, wherein the attenuation of the sample on the absorption or scattering of the rays is determined by the thickness and the material of a transillumination sample; the three-dimensional model and the position coordinates are compared with the three-dimensional model and the position coordinates of the originally designed detection hole, the qualified judgment result is qualified, a report is output, the unqualified judgment result is unqualified, the unqualified hole is identified, and the report is output at the same time. Wherein the output report includes the histogram, the data table, and the visual image. And the data of the internal and external structure sizes, the bore diameter, the hole sites and the defects of the inner wall of the hole of the product to be detected and the self-defined report of the analysis result can be visually seen.
After the present invention has completed testing a sample, reusable measurement templates, analysis templates, and completely self-contained test plans can be created and run. When batch detection of the same part is carried out, related templates are directly called for measurement and analysis, and time is saved for repeated operation of the same part, or multiple parts in a single project, or a whole batch of projects.
The most significant influencing factors in the model reconstruction process are due to ray hardening and ray scattering. These artifacts, if not properly corrected, can result in reduced reliability of the measured data. The detection device and method provided in the embodiment are equipped with complicated beam hardening, ring artifact, offset and angle drift correction technologies to correct the artifact and improve the image quality.
The information fed back by the detector for the first time is used for increasing energy to (two-dimensional) pixels according to the proportion of the density, the thickness and the attenuation value of the scanned material, a series of two-dimensional gray projection images are formed, and a three-dimensional voxel model is generated by reconstructing two-dimensional projection data; then selecting a proper threshold value to segment the boundary between the material and the air or different materials, and performing edge detection on the three-dimensional body by searching pixel change in the normal direction of the image by using an edge detection algorithm based on an actual surface; after the three-dimensional volume data is subjected to threshold segmentation and edge detection, comparison of detection hole models and analysis of position coordinates are carried out through an analysis system, and therefore complete three-dimensional visualization is constructed for the scanned object.
It should be noted that the product to be detected in the present invention is a molded product of a hard silicon carbide material, and has a large overall dimension, a diameter of 300 mm or more, deep pores (a pore diameter of 0.6mm and a pore depth of 13 mm), dense pore intervals (thousands of pores are present in a diameter range of 300 mm or more), and a large number of pores to be detected, so that it is difficult to meet the detection requirements of the people using the conventional detection device and method.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.

Claims (9)

1. The method for detecting the punching of the hard silicon carbide material is characterized by comprising the following steps of:
s1, dividing the detection hole into a plurality of detection areas according to the distance between the detection hole (8) and the reference center by taking the geometric center (7) of the product (3) to be detected as the reference center;
s2, the emitter (2) emits rays to the detection areas respectively;
s3, the ray reflected by the hole of the detection area is incident into the detector (4), and the detector (4) transmits the collected information to the processor (5);
s4, the processor (5) classifies the information fed back by the detector (4), feeds back the acquired hole image information to the image processing module, and feeds back the spatial information to the positioning module;
s5, the image processing system stores and accumulates the projection drawing of the hole, when the projection drawing of all holes in one region is completed, the three-dimensional structure model of the holes in the region of the completed projection drawing is reconstructed, and the generated three-dimensional structure model is fed back to the analysis module;
s6, the positioning module obtains the space position of the detection hole (8) according to the reflected echo signal of the feedback hole position information detected by the detector (4), and transmits the space position to the analysis system;
and S7, the analysis system compares the generated three-dimensional structure model and the generated spatial position information of the hole with the three-dimensional structure model and the spatial position of the designed hole respectively, judges the three-dimensional structure conforming to the design to be qualified and output, judges the non-conforming to the design to be unqualified, marks the position information of the non-conforming to the design hole and outputs the position information.
2. The method for detecting the perforation of the hard silicon carbide material according to claim 1, wherein the radiation sources (6) are correspondingly arranged in each unit of the detection area.
3. The method for detecting the perforation of the hard silicon carbide material according to claim 2, wherein the detection areas are equidistantly distributed, and the distance between adjacent detection areas is adjusted according to actual measurement requirements.
4. The method for detecting the perforation of the hard silicon carbide material according to claim 1, wherein the output parameters of the image comprise the aperture diameter, the edge of the hole and the inner wall of the hole.
5. The method for detecting the punching of the hard silicon carbide material according to the claim 1, characterized in that the spatial orientation of the detection holes (8) comprises the straight line position of a single detection hole (8) to the reference center (7) and the relative position between the adjacent detection holes (8);
the spatial information of the single detection hole (8) is displayed in a three-dimensional coordinate mode.
6. A hard silicon carbide detection device, which is used in the method for detecting the punching of the hard silicon carbide material according to any one of claims 1 to 5, and comprises an emitter (2), a control system (1), a processor (5) and a detector (4),
the control system (1) is electrically connected with the emitter (2) and the processor (5);
the detector (4) is electrically connected with the processor (5), a collimator is arranged between the product (3) to be detected and the emitter (2),
the centers of the optical axes of the emitted light beams of the collimator, the detector (4) and the emitter (2) are positioned on the same straight line.
7. The hard silicon carbide detection device according to claim 6, wherein an image processing module, a positioning module and an analysis module are arranged in the processor (5).
8. The hard silicon carbide detection device according to claim 6, wherein the emitter (2) comprises a plurality of radiation sources (6), and the radiation sources (6) are distributed in the emitter (2) at equal intervals;
the number of the ray sources (6) is the same as that of subareas of the detection area, and the distance between adjacent ray sources (6) is the same as that between adjacent detection areas;
the ray source (6) emits rays according to a preset rule;
the unit of the ray source (6) moves according to the actual detection requirement.
9. The apparatus for detecting hard silicon carbide according to claim 8, wherein the radiation sources (6) are rotated in a predetermined sequence and radially moved in the same detection area.
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