CN114141458A - High-stability high-power ceramic resistor and preparation method thereof - Google Patents

High-stability high-power ceramic resistor and preparation method thereof Download PDF

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CN114141458A
CN114141458A CN202111444949.7A CN202111444949A CN114141458A CN 114141458 A CN114141458 A CN 114141458A CN 202111444949 A CN202111444949 A CN 202111444949A CN 114141458 A CN114141458 A CN 114141458A
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resistor
matrix
protective layer
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CN114141458B (en
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尧中华
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Abstract

The invention relates to a high-stability high-power ceramic resistor and a preparation method thereof. This high-power ceramic resistor of high stability type includes: the resistor comprises a resistor base body and a protective layer coated on the peripheral surface of the resistor base body; the raw materials for preparing the resistor matrix comprise: acetylene black, bentonite, wollastonite and/or alumina, and a resistance modifier; the raw materials for preparing the protective layer comprise: water glass and nano alumina. According to the invention, the outer peripheral surface of the resistor matrix is coated with the protective layer formed by taking the water glass and the nano aluminum oxide as raw materials, so that the bearable temperature and the heat dissipation performance of the resistor can be improved, the resistor is isolated from oxygen at high temperature, and the resistor is prevented from cracking and oxidation failure at high temperature; by adding the resistance modifier into the resistance matrix, the problem of instability of the high-power resistor at high temperature is solved, the stability of the resistor at high temperature or under high energy impact caused by high heat is obviously improved, and the service environment of the resistor is widened.

Description

High-stability high-power ceramic resistor and preparation method thereof
Technical Field
The invention relates to the technical field of inorganic non-metallic materials, in particular to a high-stability high-power ceramic resistor and a preparation method thereof.
Background
Advanced electronic devices and systems often require resistors with good stability and reliability under high voltage, high power and high current operating conditions. For technical reasons, there are two main types of high power resistors today: wound and film. The winding resistor has the advantages of large volume, low resistance value, large distributed capacitance and inductance coefficient, and the current is not easy to pass because of the function of a choke coil. The film type plane power resistor has high negative resistance coefficient, so that the stability of the resistor is poor in temperature stability, and the stability is seriously influenced. The solid ceramic resistor can bear high-energy and high-pulse impact due to the whole body conduction, has no inductance and good thermal stability, has incomparable superiority on high-voltage, high-power and high-frequency circuits, and is very suitable for energy discharge, such as occasions of capacitor charge and discharge and the like. The high-power ceramic resistor used in China at present mainly depends on import, and the high-power ceramic resistor manufactured in China has the technical problems of poor stability, easy cracking or high-temperature failure and the like under the conditions of high voltage, high current pulse and the like, and has no breakthrough all the time. The main reasons for these phenomena are that the resistor material is not designed properly, resulting in high temperature resistance coefficient of the material and carbon oxidation at high temperature, resulting in the failure of the resistor.
Disclosure of Invention
In view of this, there is a need to provide a high-stability high-power ceramic resistor and a method for manufacturing the same, so as to solve the technical problems of poor stability, easy cracking or high-temperature failure of the high-power ceramic resistor in the prior art.
The first aspect of the present invention provides a high-stability high-power ceramic resistor, comprising: the resistor comprises a resistor base body and a protective layer coated on the peripheral surface of the resistor base body;
the raw materials for preparing the resistor matrix comprise: acetylene black and soapEarth, wollastonite and/or alumina, resistance modifiers; the resistance modifier is prepared from modified barium titanate and NiMn2O4Mixing to form a mixture;
the raw materials for preparing the protective layer comprise: water glass and nano alumina.
The second aspect of the invention provides a preparation method of a high-stability high-power ceramic resistor, which comprises the following steps:
preparing a resistance matrix: mixing acetylene black, bentonite, wollastonite and/or alumina, a resistance modifier, a binder and water, ball-milling, and then granulating, press-forming and sintering once to obtain a resistance matrix;
coating a protective layer: mixing and ball-milling water glass, nano alumina and water, then coating the mixture on the outer peripheral surface of the resistor matrix, and performing secondary sintering to form a protective layer coated on the resistor matrix on the outer peripheral surface of the resistor matrix.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, the outer peripheral surface of the resistor matrix is coated with the protective layer formed by taking the water glass and the nano aluminum oxide as raw materials, so that the bearable temperature and the heat dissipation performance of the resistor can be improved, the resistor is isolated from oxygen at high temperature, and the resistor is prevented from cracking and oxidation failure at high temperature; by adding the resistance modifier into the resistance matrix, the problem of instability of the high-power resistor at high temperature is solved, the stability of the resistor at high temperature or under high energy impact caused by high heat is obviously improved, and the service environment of the resistor is widened.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of a high-stability high-power ceramic resistor provided by the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, a first aspect of the present invention provides a high-stability high-power ceramic resistor, including: the resistor comprises a resistor matrix 1, a protective layer 2, two electrode caps 3 and a lead-out wire 4; the protective layer 2 covers the outer peripheral surface of the resistor matrix 1, the two electrode caps 3 are respectively sleeved on the end surfaces of the two ends of the resistor matrix 1 and are in contact with the protective layer 2, and the outer sides of the two electrode caps 3 are respectively connected with lead-out wires 4.
The invention can improve the bearable temperature and the heat dissipation of the resistor by arranging the protective layer 2, so that the resistor can isolate oxygen at high temperature and prevent the resistor from oxidation failure at high temperature.
In the invention, the raw materials for preparing the resistor matrix 1 comprise: acetylene black, bentonite, wollastonite and/or alumina, and a resistance modifier.
In the invention, the ceramic matrix is formed by bentonite and at least one of wollastonite and alumina at high temperature, so that the mechanical strength of the resistor can be improved. Preferably, the mass ratio of the bentonite to the wollastonite and the alumina is 1: (0.15-0.65). Within this mass ratio range, the resistor can be made to have a higher strength and a lower sintering temperature.
In some preferred embodiments of the present invention, the acetylene black is prepared by an incomplete combustion method, and has a large number of oxygen-containing groups on the surface thereof and a slightly lower electrical conductivity than other carbon materials, so that a wider range of resistance can be precisely adjusted by changing the formulation. Further, the resistivity of the acetylene black is 2 to 6 Ω · m.
In some preferred embodiments of the invention, the resistance modifier is formed from a modified barium titanate and spinel structured nickel-manganese-oxygen (NiMn)2O4) The compounds are mixed. The invention adopts the material with positive and negative resistance temperature coefficients to correct the temperature drift characteristic of the resistor, solves the problem of instability of the high-power resistor at high temperature, obviously improves the stability of the resistor at high temperature or under high energy impact during severe heating, and widens the service environment of the resistor.
Modified barium titanate and NiMn2O4All prepared by a method which is common in the field of materials. For example, modified barium titanate may be formed by sintering an oxide and barium titanate at high temperature; can pass MnO and Ni2O3Solid phase ofReacting and sintering at high temperature to obtain NiMn2O4。
In some embodiments of the invention, the modified barium titanate is obtained by sintering barium titanate, yttrium oxide and manganese oxide at high temperature, wherein the molar ratio of yttrium oxide to manganese oxide is 1: (5-10), further 1: 8; the sum of the addition amounts of yttrium oxide and manganese oxide accounts for 0.1-1% of barium titanate, and is further 0.6%; the high-temperature sintering temperature is 1200-1400 ℃, further 1300 ℃, and the time is 1-3 h, further 2 h.
In some more preferred embodiments of the present invention, the resistance modifier is composed of the following raw materials by mass: 20 to 40 percent of modified barium titanate and NiMn2O460 to 80 percent of material.
In some preferred embodiments of the present invention, the particle size of the acetylene black is 2000 to 3000 mesh, and the particle size of the bentonite, the wollastonite, the alumina, and the resistance correction agent is 300 mesh or less.
In some preferred embodiments of the present invention, the raw materials for preparing the resistor matrix 1 include, by weight: 5 to 25 percent of acetylene black, 40 to 60 percent of bentonite, 10 to 25 percent of wollastonite and/or alumina and 5 to 15 percent of resistance modifier.
In the invention, the raw materials for preparing the resistor matrix 1 also comprise; a binder and water. Furthermore, the addition amount of the binder accounts for 1 to 5 percent of the total mass of the acetylene black, the bentonite, the wollastonite and/or the alumina and the resistance modifier, and is further 2.5 percent; the addition amount of the water is 1.5-2 times of the total mass of the acetylene black, the bentonite, the wollastonite and/or the alumina and the resistance modifier.
The invention is not limited to the specific type of the selected binder, and the skilled person can select the binder according to the actual situation. In some embodiments of the invention, the binder selected is polyvinyl alcohol (PVA).
The preparation of the resistor matrix adopts a method which is universal in the field of ceramics. For example, it may be: adding a binder into a mixture of acetylene black, bentonite, wollastonite andor alumina and a resistance modifier, ball-milling by taking water as a medium, granulating by a spray drying technology, and then performing compression molding and sintering to obtain a resistance matrix.
In the present invention, the raw materials for preparing the protective layer 2 include: water glass and nano alumina. According to the invention, the aluminum oxide with excellent heat conduction and insulation performance is used as the coating, the caking property of the water glass is utilized, and the protective layer is obtained by atomization spraying, so that the bearable temperature of the resistor can reach more than 450 ℃; meanwhile, the nano-alumina is adopted in the protective layer, so that the heat conductivity is obviously improved, the gathered heat can be rapidly dissipated outwards, and cracking caused by rapid heat gathering is prevented.
In some preferred embodiments of the present invention, the raw materials for preparing the protective layer 2 include, in weight percent: 50 to 60 percent of water glass and 40 to 50 percent of nano alumina. According to the invention, the sintering temperature of the protective layer can be reduced by controlling the contents of the water glass and the nano alumina within the range, and the influence on the performance of the resistor caused by overhigh sintering temperature of the protective layer is avoided; and meanwhile, the protective layer has better heat-conducting property.
In the present invention, the raw materials of the protective layer 2 further include: and (3) water. Further, the adding amount of water is 2-5 times, and further 3 times of the total mass of the water glass and the nano aluminum oxide.
In some embodiments of the invention, the concentration of the water glass is 30% to 35%, further 34%, and the modulus is 3 to 3.5, further 3.3; the particle size of the nano alumina is 20-50 nm.
In the invention, the thickness of the protective layer is 10-200 microns. If the thickness of the protective layer is too high, the heat dissipation performance is not improved, and the protective layer is easy to fall off from the resistor substrate; if the thickness of the protective layer is too low, the high temperature stability of the resistor is poor.
In some preferred embodiments of the present invention, the protective layer has a thickness of 30 to 60 μm.
In the present invention, the ceramic resistor further includes metal electrodes (not shown), and the metal electrodes are disposed on end faces of two ends of the resistor substrate coated with the protective layer and are in contact with the electrode caps through solder paste. Furthermore, the metal electrode is made of at least one of copper or aluminum.
The specific materials and arrangement of the electrode cap 3 and the lead-out wire 4 are not limited in the present invention, and those skilled in the art can select them according to the actual situation. For example, the electrode cap 3 may be made of chromium zirconium copper, copper electrode cap, etc. commonly used in the art, and is formed by forming a metal electrode on the end surface of the resistor substrate 1, applying a solder paste, covering the electrode cap, and soldering by a reflow soldering technique; the lead-out wire 4 can be made of copper or aluminum wire commonly used in the art and is connected with the electrode cap 3 by welding.
The second aspect of the invention provides a preparation method of a high-stability high-power ceramic resistor, which comprises the following steps:
s1, preparing a resistance matrix: mixing acetylene black, bentonite, wollastonite and/or alumina, a resistance modifier, a binder and water, ball-milling, and then granulating, press-forming and sintering once to obtain a resistance matrix;
s2, coating protective layer: mixing and ball-milling water glass, nano alumina and water, then coating the mixture on the outer peripheral surface of the resistor matrix, and performing secondary sintering to form a protective layer coated on the resistor matrix on the outer peripheral surface of the resistor matrix.
In the present invention, the granulation process is performed by spray drying.
In the present invention, the molding pressure is 150 to 200MPa, further 175 to 185MPa, and further 180 MPa.
In the invention, the temperature of primary sintering is 940-1300 ℃, and further 950-1250 ℃; the time for the first sintering is 100-150 min, further 110-130 min, further 120 min.
In the invention, the surface of the resistor matrix is coated with slurry formed by mixing and ball-milling water glass, nano-alumina and water in an atomizing and spraying manner.
In the invention, the temperature of the secondary sintering is 860-900 ℃, further 870-890 ℃, and further 880 ℃; the secondary sintering time is 10-30 min, further 15-25 min, and further 20 min.
In the invention, the primary sintering and the secondary sintering are both carried out in an inert atmosphere. In some embodiments of the invention, the inert atmosphere is nitrogen or argon.
In the invention, the preparation method of the high-stability high-power ceramic resistor further comprises the following steps:
s3, spraying a metal electrode: spraying metal electrodes on the end faces of two ends of the resistor substrate coated with the protective layer; furthermore, the spraying thickness of the metal electrode is 10-50 μm.
S4, welding an electrode cap: coating soldering paste on the end faces of the two ends of the resistor matrix sprayed with the metal electrodes, covering the resistor matrix with electrode caps, and welding the electrode caps on the two ends of the resistor matrix through reflow soldering;
s5, welding an outgoing lead: and welding lead-out wires on the two electrode caps to obtain a finished resistor product.
In the following examples and comparative examples of the present invention, to avoid redundancy, some of the raw materials are summarized as follows:
acetylene black: the model adopted is 75% compression; the manufacturer: tianjin Zhengning New Material science and technology Co., Ltd;
water glass: the concentration is 34 percent, and the modulus is 3.3; the supplier: shandong Youso chemical science and technology, Inc.;
the preparation process of the modified barium titanate is as follows: after being uniformly mixed, barium carbonate and titanium dioxide are sintered for 2 hours at 1250 ℃ to prepare barium titanate powder; uniformly mixing barium titanate, yttrium oxide and manganese oxide, and sintering at 1300 ℃ for 2 hours to obtain modified barium titanate; wherein the molar ratio of yttrium oxide to manganese oxide is 1:8, and the sum of the addition amount of yttrium oxide and manganese oxide accounts for 0.6% of barium titanate.
Example 1
The preparation method of the high-stability high-power ceramic resistor provided by the embodiment comprises the following steps:
(1) preparing a resistance matrix: to 10kg of resistive powder (0.5kg of acetylene black, 5.8kg of bentonite, 2.5kg of wollastonite, 0.48kg of modified barium titanate and 0.72kg of NiMn)2O4) Adding 0.25kg of polyvinyl alcohol and 15kg of deionized water, putting into a ball milling tank, and uniformly mixing; granulating by a spray drying technology; pressing the obtained granulated powder at 180MPa with a press to obtain a cylinder with a diameter of 21mm and a height of 30mmSintering the ceramic resistor body under the protection of argon at 980 ℃ for 2h to obtain a high-power ceramic resistor matrix 1;
(2) coating a protective layer: weighing 600g of water glass and 400g of nano alumina (20nm), and performing ball milling by taking 3kg of water as a medium to prepare slurry for later use; atomizing and spraying the powder on the peripheral surface of the resistor matrix 1, and rapidly sintering the powder for 20 minutes at 880 ℃ in the protective atmosphere of argon, wherein the thickness of the powder is 30 microns;
(3) spraying a metal electrode: spraying copper electrodes on the end faces of the two ends of the resistor substrate coated with the protective layers by adopting plasma spraying equipment; wherein the spraying thickness is 20 μm;
(4) welding an electrode cap: coating soldering paste on the end faces of two ends of the resistor substrate coated with the metal electrode, covering the electrode cap 3, and welding in a reflow soldering machine;
(5) welding a lead-out wire: and welding the lead-out wire 4 to obtain a resistor finished product.
The ceramic resistor with the resistance value of 57.3 +/-10% omega can be prepared by the embodiment, can resist the impact voltage of 45.2kV, can absorb 320J of single energy, can bear the temperature range of minus 55 ℃ to 450 ℃, and has the temperature resistance change rate of less than 0.1%/° C.
Example 2
The preparation method of the high-stability high-power ceramic resistor provided by the embodiment comprises the following steps:
(1) preparing a resistance matrix: to 10kg of resistive powder (2kg of acetylene black, 5.6kg of bentonite, 1kg of wollastonite, 0.43kg of modified barium titanate and 0.97kg of NiMn)2O4) Adding 0.25kg of polyvinyl alcohol and 20kg of deionized water, putting into a ball milling tank, and uniformly mixing; granulating by a spray drying technology; pressing the obtained granulated powder by a press machine under 180MPa to obtain a cylinder with the diameter of 21mm and the height of 30mm, and sintering under the protection of argon at the sintering temperature of 1000 ℃ for 2 hours to obtain a high-power ceramic resistor matrix 1;
(2) coating a protective layer: weighing 600g of water glass and 400g of nano alumina (20nm), and performing ball milling by taking 3kg of water as a medium to prepare slurry for later use; atomizing and spraying the powder on the peripheral surface of the resistor matrix 1, and rapidly sintering the powder for 20 minutes at 880 ℃ in the protective atmosphere of argon, wherein the thickness of the powder is 40 microns;
(3) spraying a metal electrode: spraying copper electrodes on the end faces of the two ends of the resistor substrate coated with the protective layers by adopting plasma spraying equipment; wherein the spraying thickness is 10 μm;
(4) welding an electrode cap: coating soldering paste on the end faces of two ends of the resistor substrate coated with the metal electrode, covering the electrode cap 3, and welding in a reflow soldering machine;
(5) welding a lead-out wire: and welding the lead-out wire 4 to obtain a resistor finished product.
The ceramic resistor with the resistance value of 20.1 +/-10% omega can be prepared by the embodiment, the ceramic resistor can resist 34.3kV impact voltage, can absorb 450J of single energy, can bear the temperature range of-55 ℃ to 450 ℃, and has the temperature resistance change rate of less than 0.1%/° C.
Example 3
The preparation method of the high-stability high-power ceramic resistor provided by the embodiment comprises the following steps:
(1) preparing a resistance matrix: to 10kg of resistive powder (2.5kg of acetylene black, 5kg of bentonite, 2kg of wollastonite, 0.1kg of modified barium titanate and 0.4kg of NiMn)2O4) Adding 0.25kg of polyvinyl alcohol and 15kg of deionized water, putting into a ball milling tank, and uniformly mixing; granulating by a spray drying technology; pressing the obtained granulated powder by a press machine under 180MPa to obtain a cylinder with the diameter of 21mm and the height of 30mm, and sintering under the protection of argon at 1080 ℃ for 2 hours to obtain a high-power ceramic resistor matrix 1;
(2) coating a protective layer: weighing 550g of water glass and 450g of nano alumina (20nm), and performing ball milling by taking 3kg of water as a medium to prepare slurry for later use; atomizing and spraying the powder on the peripheral surface of the resistor matrix 1, and rapidly sintering the powder for 20 minutes at 880 ℃ in the protective atmosphere of argon, wherein the thickness of the powder is 30 microns;
(3) spraying a metal electrode: spraying copper electrodes on the end faces of the two ends of the resistor substrate coated with the protective layers by adopting plasma spraying equipment; wherein the spraying thickness is 30 μm;
(4) welding an electrode cap: coating soldering paste on the end faces of two ends of the resistor substrate coated with the metal electrode, covering the electrode cap 3, and welding in a reflow soldering machine;
(5) welding a lead-out wire: and welding the lead-out wire 4 to obtain a resistor finished product.
The ceramic resistor with the resistance value of 0.7 +/-10% omega can be prepared by the embodiment, 14.4kV impact voltage can be resisted, the single energy can be absorbed by 620J, the temperature range can be borne by-55-450 ℃, and the temperature resistance change rate is less than 0.1%/° C.
Example 4
The preparation method of the high-stability high-power ceramic resistor provided by the embodiment comprises the following steps:
(1) preparing a resistance matrix: to 10kg of resistive powder (2.2kg of acetylene black, 6kg of bentonite, 1.2kg of wollastonite, 0.18kg of modified barium titanate and 0.42kg of NiMn)2O4) Adding 0.25kg of polyvinyl alcohol and 18kg of deionized water, putting into a ball milling tank, and uniformly mixing; granulating by a spray drying technology; pressing the obtained granulated powder by a press machine under 180MPa to obtain a cylinder with the diameter of 21mm and the height of 30mm, and sintering under the protection of argon at the sintering temperature of 950 ℃ for 2 hours to obtain a high-power ceramic resistor matrix 1;
(2) coating a protective layer: weighing 500g of water glass and 500g of nano alumina (50nm), and performing ball milling by taking 3kg of water as a medium to prepare slurry for later use; atomizing and spraying the powder on the peripheral surface of the resistor matrix 1, and rapidly sintering the powder for 20 minutes at 880 ℃ in the protective atmosphere of argon, wherein the thickness of the powder is 50 microns;
(3) spraying a metal electrode: spraying copper electrodes on the end faces of the two ends of the resistor substrate coated with the protective layers by adopting plasma spraying equipment; wherein the spraying thickness is 50 μm;
(4) welding an electrode cap: coating soldering paste on the end faces of two ends of the resistor substrate coated with the metal electrode, covering the electrode cap 3, and welding in a reflow soldering machine;
(5) welding a lead-out wire: and welding the lead-out wire 4 to obtain a resistor finished product.
The ceramic resistor with the resistance value of 6.8 +/-10% omega can be prepared by the embodiment, 20.3kV impact voltage can be resisted, the single energy can be absorbed by 540J, the temperature range can be borne by minus 55 ℃ to 450 ℃, and the temperature resistance change rate is less than 0.1%/DEG C.
Example 5
The preparation method of the high-stability high-power ceramic resistor provided by the embodiment comprises the following steps:
(1) preparing a resistance matrix: to 10kg of resistive powder (2.1kg of acetylene black, 4kg of bentonite, 2.4kg of wollastonite, 0.52kg of modified barium titanate and 0.98kg of NiMn)2O4) Adding 0.25kg of polyvinyl alcohol and 17kg of deionized water, putting into a ball milling tank, and uniformly mixing; granulating by a spray drying technology; pressing the obtained granulated powder by a press machine under 180MPa to obtain a cylinder with the diameter of 21mm and the height of 30mm, and sintering under the protection of argon at the sintering temperature of 1200 ℃ for 2 hours to obtain a high-power ceramic resistor matrix 1;
(2) coating a protective layer: weighing 550g of water glass and 450g of nano alumina (50nm), and performing ball milling by taking 3kg of water as a medium to prepare slurry for later use; atomizing and spraying the powder on the peripheral surface of the resistor matrix 1, and rapidly sintering the powder for 20 minutes at 880 ℃ in the protective atmosphere of argon, wherein the thickness of the powder is 60 microns;
(3) spraying a metal electrode: spraying aluminum electrodes on the end faces of the two ends of the resistor substrate coated with the protective layers by adopting plasma spraying equipment; wherein the spraying thickness is 40 μm;
(4) welding an electrode cap: coating soldering paste on the end faces of two ends of the resistor substrate coated with the metal electrode, covering the electrode cap 3, and welding in a reflow soldering machine;
(5) welding a lead-out wire: and welding the lead-out wire 4 to obtain a resistor finished product.
The ceramic resistor with the resistance value of 9.5 +/-10% omega can be prepared by the embodiment, the ceramic resistor can resist 28.2kV impact voltage, can absorb 520J of single energy, can bear the temperature range of-55 ℃ to 450 ℃, and has the temperature resistance change rate of less than 0.1%/° C.
Example 6
Compared with example 1, the difference is only that: wollastonite in the resistance matrix is replaced by alumina, and the process for preparing the resistance matrix is as follows:
(1) preparing a resistance matrix: to 10kg of resistive powder (0.5kg of acetylene black, 5.8kg of bentonite, 2.5kg of alumina, 0.48kg of modified barium titanate and 0.72kg of NiMn)2O4) Adding 0.25kg of polyvinyl alcohol and 15kg of deionized water, putting into a ball milling tank, and uniformly mixing; tong (Chinese character of 'tong')Granulating by a spray drying technology; pressing the obtained granulated powder by a press machine under 180MPa to obtain a cylinder with the diameter of 21mm and the height of 30mm, and sintering under the protection of argon at 1250 ℃ for 2 hours to obtain a high-power ceramic resistor matrix 1;
the rest of the procedure was exactly the same as in example 1.
According to the embodiment, the ceramic resistor with the resistance value of 63 +/-10% omega can be prepared, 34kV impact voltage can be resisted, 300J of energy can be absorbed by a single resistor, the temperature range can be borne, the temperature range is-55-450 ℃, and the temperature resistance change rate is less than 0.5%/° C.
Comparative example 1
Compared with example 1, the difference is only that: the protective layer is not coated.
The comparative example can prepare a ceramic resistor with the resistance value of 54.6 +/-10% omega, can resist 30kV impact voltage, can bear the temperature range of minus 55-250 ℃ by only absorbing energy of 270J, can cause the resistance to be enlarged after the temperature is continuously increased after impact, and has the resistance temperature change rate of less than 0.1%/DEG C in the allowable temperature range.
Compared with the prior art, the invention has the beneficial effects that:
the ceramic in the ceramic resistor has uniform distribution, high density, high-voltage and high-current impact resistance, high energy density (more than 300J), no inductance, more effective than wire winding and thin-film resistors, controllable process and high yield;
the resistor has the advantages of simple structure, small volume, low cost, convenient installation and controllable quality due to the whole body conductive characteristic;
the ceramic resistor is suitable for electronic circuits in the fields of high power, high pulse and the like such as high voltage, large current and the like.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention.

Claims (10)

1. A high-power ceramic resistor of high stability, characterized by comprising: the resistor comprises a resistor base body and a protective layer coated on the peripheral surface of the resistor base body;
the raw materials for preparing the resistor matrix comprise: acetylene black, bentonite, wollastonite and/or alumina, and a resistance modifier; the resistance modifier is prepared from modified barium titanate and NiMn2O4Mixing to form a mixture;
the raw materials for preparing the protective layer comprise: water glass and nano alumina.
2. The high stability high power ceramic resistor according to claim 1, wherein the modified barium titanate is obtained by sintering barium titanate, yttrium oxide and manganese oxide at high temperature; wherein the molar ratio of yttrium oxide to manganese oxide is 1: (5-10), and the sum of the addition amount of yttrium oxide and manganese oxide accounts for 0.1% -1% of barium titanate.
3. The high-stability high-power ceramic resistor as claimed in claim 1, wherein the resistance modifier is composed of the following raw materials by mass percent: 20-40% of modified barium titanate and NiMn2O460-80% of the material.
4. The high stability high power ceramic resistor according to claim 1, wherein the raw materials for preparing the resistor substrate comprise, by weight: 5-25% of acetylene black, 40-60% of bentonite, 10-25% of wollastonite and/or alumina and 5-15% of resistance modifier; the raw materials for preparing the protective layer comprise: 50 to 60 percent of water glass and 40 to 50 percent of nano alumina.
5. The high stability high power ceramic resistor according to claim 1, wherein the raw materials for preparing the resistor substrate further comprise: a binder and water; the raw materials for preparing the protective layer also comprise: and (3) water.
6. The high stability high power ceramic resistor as claimed in claim 1, wherein the thickness of the protection layer is 10-200 μm.
7. The high stability high power ceramic resistor according to claim 1, wherein the ceramic resistor further comprises a metal electrode, an electrode cap and a lead-out wire; the metal electrodes are arranged on the end faces of two ends of the resistor substrate coated with the protective layer and are in contact with the electrode caps through solder paste; the two electrode caps are respectively sleeved on the end faces of the two ends of the resistor matrix and are in contact with the protective layer, and the outer sides of the two electrode caps are respectively connected with the lead-out wires.
8. A method for preparing a high-stability high-power ceramic resistor according to any one of claims 1 to 7, comprising the following steps:
preparing a resistance matrix: mixing acetylene black, bentonite, wollastonite and/or alumina, a resistance modifier, a binder and water, ball-milling, and then granulating, press-forming and sintering once to obtain a resistance matrix;
coating a protective layer: mixing and ball-milling water glass, nano alumina and water, then coating the mixture on the outer peripheral surface of the resistor matrix, and performing secondary sintering to form a protective layer coated on the resistor matrix on the outer peripheral surface of the resistor matrix.
9. The method for preparing the high-stability high-power ceramic resistor according to claim 8, wherein the temperature of the primary sintering is 940-1300 ℃, and the time of the primary sintering is 100-150 min; the temperature of the secondary sintering is 860-900 ℃, and the time of the secondary sintering is 10-30 min; the primary sintering and the secondary sintering are both carried out in an inert atmosphere.
10. The method for manufacturing a high stability high power ceramic resistor according to claim 8, further comprising:
spraying a metal electrode: spraying the metal electrodes on the end faces of the two ends of the resistor substrate coated with the protective layer;
welding an electrode cap: coating soldering paste on the end faces of the two ends of the resistor matrix sprayed with the metal electrodes, covering the resistor matrix with electrode caps, and welding the electrode caps on the two ends of the resistor matrix through reflow soldering;
welding a lead-out wire: and welding lead-out wires on the two electrode caps to obtain a finished resistor product.
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CN103319161A (en) * 2013-06-14 2013-09-25 西安交通大学 Composite aluminum oxide ceramic resistance material for large-power resistance element and preparation method thereof
CN111559913A (en) * 2020-06-05 2020-08-21 西安交通大学 Carbon ceramic linear resistor and preparation method of side composite insulating layer thereof

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