CN114123830A - Semiconductor circuit having a plurality of transistors - Google Patents
Semiconductor circuit having a plurality of transistors Download PDFInfo
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- CN114123830A CN114123830A CN202111281059.9A CN202111281059A CN114123830A CN 114123830 A CN114123830 A CN 114123830A CN 202111281059 A CN202111281059 A CN 202111281059A CN 114123830 A CN114123830 A CN 114123830A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
- H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
- H02H7/12—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
- H02H7/122—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for inverters, i.e. dc/ac converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/42—Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
- H02M1/4208—Arrangements for improving power factor of AC input
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
- Protection Of Static Devices (AREA)
Abstract
The invention discloses a semiconductor circuit which comprises a driving module, an inversion module and a temperature detection module, wherein the inversion module and the temperature detection module are electrically connected with the driving module, the driving module is provided with a level input port for inputting a level signal, the level input port is used for being electrically connected with an external MCU (microprogrammed control Unit), the driving module controls the starting and stopping of a temperature protection function through the level signal input by the level input port, and the driving module controls the starting and stopping of the temperature protection function according to a temperature signal fed back by the temperature detection module. The semiconductor circuit provided by the invention is convenient to control the starting and stopping of the temperature protection function by utilizing high and low levels sent by an external MCU (microprogrammed control Unit) by arranging the level input port on the driving module, thereby being beneficial to artificially controlling the starting and stopping of the protection function and being beneficial to manually closing the temperature protection function after the temperature protection function is triggered by mistake.
Description
Technical Field
The invention relates to the technical field of semiconductor circuits, in particular to a semiconductor circuit.
Background
The semiconductor circuit is a power driving product combining power electronics and integrated circuit technology, integrates an intelligent control IC, high-power devices such as an insulated gate bipolar transistor, a MOSFET (metal-oxide-semiconductor field effect transistor), an FRD (fast recovery diode) and the like for power output and some resistance-capacitance elements, and the components are welded on an aluminum substrate through tin-based solder.
In frequency conversion electrical products such as frequency conversion air conditioners, frequency converters and the like applying semiconductor circuits, a temperature detection circuit and a control circuit electrically connected with the semiconductor circuits are usually additionally arranged on a PCB of the frequency conversion electrical products, and the work of the semiconductor circuits is regulated and controlled by the control circuit according to the temperature of the semiconductor circuits fed back by a temperature detection module. However, the conventional method for regulating and controlling the operation of the semiconductor circuit only according to the detected temperature is single, and the operation of the semiconductor circuit cannot be regulated and controlled manually.
Disclosure of Invention
The present invention is directed to a semiconductor circuit to solve the problems set forth in the background art.
In order to achieve the above object, the semiconductor circuit provided by the present invention includes a driving module, and an inverter module and a temperature detection module electrically connected to the driving module, wherein the driving module has a level input port for inputting a level signal, the level input port is electrically connected to an external MCU, the driving module controls the start and stop of a temperature protection function according to the level signal input by the level input port, and the driving module controls the start and stop of the temperature protection function according to a temperature signal fed back by the temperature detection module.
Preferably, the driving module has a VDD pin, an RCIN pin, a COM pin, an ITRIP pin, a PFCTRIP pin, a VSS pin, a TH pin, a TF pin, an LO1 pin, an LO2 pin, an LO3 pin, a PFCOUT pin, an HO1 pin, a VS1 pin, an HO2 pin, a VS2 pin, an HO3 pin, and a VS3 pin, the VDD pin, the VSS pin, and the TH pin are electrically connected to the temperature detection module, the TF pin is the level input port, the LO1 pin, the LO2 pin, an LO3 pin, an HO1 pin, a VS1 pin, an HO2 pin, a VS2 pin, an HO3 pin, and a VS3 pin are electrically connected to the inverter module, and the COM pin is electrically connected to the VSS pin.
Preferably, the temperature detection module includes first electric capacity, first resistance, second resistance and thermistor, the VDD stitch respectively with first electric capacity, first resistance and second resistance electricity are connected, first electric capacity still with the VSS stitch electricity is connected, first resistance still with the TH stitch electricity be connected and through the thermistor with the VSS stitch electricity is connected, the second resistance still with RCIN stitch electricity is connected.
Preferably, the temperature detection module further includes a second capacitor, a third capacitor and a fourth capacitor, the RCIN pin is further electrically connected to the VSS pin through the second capacitor, the itre pin is electrically connected to the VSS pin through the third capacitor, and the PFCTRIP pin is electrically connected to the VSS pin through the fourth capacitor.
Preferably, the semiconductor circuit further comprises a PFC module electrically connected to the PFCOUT pin.
Preferably, the PFC module includes an insulated gate bipolar transistor and a diode, a G terminal of the insulated gate bipolar transistor is electrically connected to the PFCOUT pin, and a C terminal of the insulated gate bipolar transistor is electrically connected to a cathode of the diode.
Preferably, a power supply unit, an under-voltage power supply protection unit, a high-side drive unit, an error/enable unit, an overcurrent protection unit, a PFC overcurrent protection unit, an interlock and dead zone unit, a low-side drive unit, a logic unit, a PFC drive unit, and a temperature control unit are integrated in the drive module.
Preferably, the driving module further has a HIN1 pin, a HIN2 pin, a HIN3 pin, a LIN1 pin, a LIN2 pin, a LIN3 pin, a PFCIN pin, a FLT pin, a VB1 pin, a VB2 pin and a VB3 pin, the power supply unit is electrically connected with the VDD pin, the VSS pin, an under-voltage power protection unit and a high side driving unit respectively, the high side driving unit is electrically connected with the VB1 pin, the VS1 pin, the VB2 pin, the VS2 pin, the VB3 pin, the VS3 pin, the HIN1 pin, the HIN2 pin, the HIN3 pin, the HO1 pin, the HO2, the HO3 pin, the error reporting/enabling unit is electrically connected with the FLT pin and the high side driving unit respectively, the over-current protection unit is electrically connected with the ITRIP pin and the high side driving unit respectively, the PFC protection unit is electrically connected with the PFCTRIP side driving unit and the dead zone side driving unit respectively, the low-side driving unit is electrically connected with the LO1 pin, the LO2 pin, the LO3 pin and the high-side driving unit respectively, the logic unit is electrically connected with the PFCIN pin, the high-side driving unit and the PFC driving unit respectively, the PFC driving unit is also electrically connected with the PFCOUT, and the temperature control unit is electrically connected with the TH pin, the TF pin and the high-side driving unit respectively.
Preferably, a fifth capacitor is further integrated inside the driving module, and the overcurrent protection unit is electrically connected with the power supply unit through the fifth capacitor.
Preferably, a sixth capacitor is further integrated inside the driving module, and the PFC overcurrent protection unit is electrically connected to the power supply unit through the sixth capacitor.
According to the semiconductor circuit provided by the embodiment of the invention, the level input port is arranged on the driving module, so that the start and stop of the temperature protection function can be conveniently controlled by using high and low levels sent by an external MCU (microprogrammed control Unit), the start and stop of the protection function can be conveniently controlled manually, and the manual closing of the temperature protection function after the false triggering occurs can be facilitated.
Drawings
FIG. 1 is a circuit diagram of an embodiment of a semiconductor circuit of the present invention;
FIG. 2 is a circuit diagram of the drive module and the temperature sensing module shown in FIG. 1;
fig. 3 is a circuit diagram of the PFC module shown in fig. 1;
fig. 4 is a block diagram of the drive module shown in fig. 2.
Description of the reference numerals
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.
It will also be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
The semiconductor circuit provided by the invention is a circuit module which integrates a power switch device, a high-voltage driving circuit and the like together and is sealed and packaged on the outer surface, and is widely applied to the field of power electronics, such as the fields of frequency converters of driving motors, various inversion voltages, variable frequency speed regulation, metallurgical machinery, electric traction, variable frequency household appliances and the like. The semiconductor circuit herein may be referred to by various other names, such as a Modular Intelligent Power System (MIPS), an Intelligent Power Module (IPM), or a hybrid integrated circuit, a Power semiconductor module, a Power module, and so on. In the following embodiments of the present invention, collectively referred to as a Modular Intelligent Power System (MIPS).
The invention provides a modular intelligent power system, as shown in fig. 1 and 2, the modular intelligent power system comprises a driving module 10, an inverter module 20 and a temperature detection module 30, wherein the inverter module 20 and the temperature detection module 30 are electrically connected with the driving module 10, the driving module 10 is provided with a level input port for inputting high and low levels, the level input port is electrically connected with an external MCU, the driving module 10 controls the start and stop of a temperature protection function through a level signal input by the level input port, and the driving module 10 controls the start and stop of the temperature protection function according to a temperature signal fed back by the temperature detection module 30.
Wherein, temperature detection module 30 can arrange according to current form to the realization is according to the temperature output high-low level that detects, thereby be convenient for drive module 10 according to the start-stop of high-low level control temperature protect function, specifically, can be through the characteristic detection temperature of temperature measurement resistance, and first drive frequency regulation and second frequency regulation are the start-stop of control temperature protect function. The main difference of this scheme lies in that drive module 10 is last to have the level input port that can be connected with outside MCU electricity to the start-stop of temperature protection function is controlled according to the high-low level of MCU output to be convenient for, can inform the start-stop of temperature protection function through artificial mode, in order to be favorable to at the temperature protection function appear the artifical shut-down of people after the spurious triggering.
In a preferred embodiment, as shown in fig. 1 and 2, the driving module 10 preferably has a VDD pin, an RCIN pin, a COM pin, an ITRIP pin, a PFCTRIP pin, a VSS pin, a TH pin, a TF pin, an LO1 pin, an LO2 pin, an LO3 pin, a PFCOUT pin, an HO1 pin, a VS1 pin, an HO2 pin, a VS2 pin, an HO3 pin, and a VS3 pin, wherein the VDD pin, the VSS pin, and the TH pin are electrically connected to the temperature detecting module 30, the TF pin is a level input port, the LO1 pin, the LO2 pin, an LO3 pin, a VB1 pin, an HO1 pin, a VS1 pin, a VB2 pin, a HO2 pin, a VS2 pin, a VB3 pin, an HO3 pin, and a VS3 pin are electrically connected to the inverter module 20, and the COM pin is electrically connected to the VSS pin. The PWM wave input port comprises a HIN1 pin, a HIN2 pin, a HIN3 pin, a LIN1 pin, a LIN2 pin and a LIN3 pin, wherein the PFCIN pin is a driving signal input pin of a PFC circuit, the FLT pin is a fault signal output pin, the PFCTRIP pin is a PFC circuit protection signal input pin, the IRTIP pin is an overcurrent protection signal input pin of the inverter module 20, the RCIN pin is a time constant input pin, the COM pin and the VSS pin are ground pins, and the TH pin is a temperature detection signal input pin.
In a preferred embodiment, as shown in fig. 2, the temperature detecting module 30 preferably includes a first capacitor C1, a first resistor R1, a second resistor R2 and a thermistor NTC, the VDD pin is electrically connected to the first capacitor C1, the first resistor R1 and the second resistor R2 respectively, the first capacitor C1 is further electrically connected to the VSS pin, the first resistor R1 is further electrically connected to the TH pin and the VSS pin via the thermistor NTC, and the second resistor R2 is further electrically connected to the RCIN pin. The first capacitor C1 is a filter capacitor, the first resistor R1 is a pull-up resistor, and the second resistor R2 is a constant resistor, so as to control the holding time of the fault output. In this embodiment, when the TF pin is at a low level, the modular intelligent power system does not have a temperature protection function, when the TF pin receives an external high level signal, the modular intelligent power system has a temperature protection function, the internal temperature detection functions, after the TF pin receives a voltage division signal of the NTC thermistor and the first resistor R1, the microprocessor inside the driving module 10 calculates the temperature of the modular intelligent power system module according to the voltage signal, and when the temperature is between-25 ℃ and 110 ℃, the modular intelligent power system module is at a normal temperature and can normally operate. When the temperature is above 110 ℃, the modular intelligent power system module is in a high-temperature state, and at this time, the microprocessor in the driving module 10 sends a signal to protect the modular intelligent power system and has a high-temperature access protection function. The temperature is-40 ℃ to-25 ℃, the modular intelligent power system module is in a low-temperature transition state, the microprocessor in the driving module 10 can enable the modular intelligent power system to work in a low-power low-frequency band at the beginning, and the modular intelligent power system has a slow temperature rise process and is prevented from being damaged by rapid cold and hot impact. And after the temperature of the modular intelligent power system is higher than-25 ℃, the modular intelligent power system recovers to work normally. When the temperature is below-40 ℃, the modular intelligent power system module is in a low-temperature state, and at this time, the microprocessor in the driving module 10 sends a signal to protect the modular intelligent power system, so that the modular intelligent power system enters a low-temperature protection function. At this time, the input level of the TF pin may be controlled by the external MUC, or may be implemented by a general resistor using pull-up or pull-down.
In a preferred embodiment, as shown in fig. 2, the temperature detecting module 30 further includes a second capacitor C2, a third capacitor C3 and a fourth capacitor C4, the RCIN pin is further electrically connected to the VSS pin through the second capacitor C2, the ITRIP pin is electrically connected to the VSS pin through the third capacitor C3, and the PFCTRIP pin is electrically connected to the VSS pin through the fourth capacitor C4. The second capacitor C2, the third capacitor C3 and the fourth capacitor C4 are filter capacitors.
In a preferred embodiment, as shown in fig. 1 and 3, the preferred modular smart power system further includes a PFC module 40 electrically connected to the PFCOUT pin. The PFC module 40 includes an insulated gate bipolar transistor IGBT1 and a diode D1, a G terminal of the insulated gate bipolar transistor IGBT1 is electrically connected to the PFCOUT pin, and a C terminal of the insulated gate bipolar transistor IGBT1 is electrically connected to a cathode of the diode D1. At this time, the C terminal of the IGBT1 is also directly led out as the output port of the PFC, the anode of the diode D1 is led out as the VCC port, and the C terminal of the IGBT1 is also directly led out as the VCC port.
In a preferred embodiment, as shown in fig. 4, it is preferable that the power unit 11a, the under-voltage power protection unit 11b, the high-side driving unit 11c, the error reporting/enabling unit 11d, the over-current protection unit 11e, the PFC over-current protection unit 11f, the interlock and dead zone unit 11g, the low-side driving unit 11h, the logic unit 11i, the PFC driving unit 11J, and the temperature control unit 11k are integrated inside the driving module 10. Meanwhile, the driving module 10 further has a HIN1 pin, a HIN2 pin, a HIN3 pin, a LIN1 pin, a LIN2 pin, a LIN3 pin, a PFCIN pin, an FLT pin, a VB1 pin, a VB2 pin, and a VB3 pin. Wherein, the power unit 11a is electrically connected to the VDD pin, VSS pin, under-voltage power protection unit 11b and high side driving unit 11c, the high side driving unit 11c is electrically connected to the VB1 pin, VS1 pin, VB2 pin, VS2 pin, VB3 pin, VS3 pin, HIN1 pin, HIN2 pin, HIN3 pin, HO1 pin, HO2 pin and HO3 pin, the error/enable unit 11d is electrically connected to the FLT pin and high side driving unit 11c, the over-current protection unit 11e is electrically connected to the ITRIP pin and high side driving unit 11c, the PFC over-current protection unit 11f is electrically connected to the ctrip pin and high side driving unit 11c, the interlock and dead zone unit 11g is electrically connected to the high side driving unit 11c and low side driving unit 11h, the low side driving unit 11h is electrically connected to the LO1 pin, LO2, LO3 and high side driving unit 11c, and pfi is electrically connected to the cin driving unit 11i, The high side driving unit 11c is electrically connected to the PFC driving unit 11J, the PFC driving unit 11J is also electrically connected to the PFCOUT, and the temperature control unit 11k is electrically connected to the TH pin, the TF pin, and the high side driving unit 11c, respectively. In this embodiment, the high-side driving unit 11c includes a high-side undervoltage protection circuit and a bootstrap circuit therein, so as to implement an undervoltage protection function and a bootstrap power supply function of the high-side driving unit 11 c; an interlock and dead zone unit is connected between the high-side drive unit 11c and the low-side drive unit 11h to realize the interlock and dead zone functions; the power supply unit 11a includes a 5V LDO circuit and a 1.2V BANDGAP circuit, supplies 5V voltage to all units and external circuits inside the driving module 10, and provides a stable 1.2V voltage reference to the driving module 10 and the external circuits; the power supply unit 11a is connected with the power supply under-voltage protection unit 11b to realize the power supply under-voltage protection function; the error reporting/enabling unit 11d is used for realizing the error reporting and enabling functions, and outputting an error reporting signal when the conditions of undervoltage, overcurrent, overvoltage, overtemperature and the like occur inside the driving module 10; the overcurrent protection unit 11e realizes an overcurrent protection function; the temperature control movable unit judges the high and low levels of the pin and switches whether to have a temperature protection function, the pin has the temperature protection function when being at the high level and does not have the temperature protection function when being at the low level, and the temperature protection function comprises a high-temperature protection function and a low-temperature protection function.
In a preferred embodiment, as shown in fig. 4, it is preferable that a fifth capacitor C5 is further integrated inside the driving module 10, and the overcurrent protection unit 11e is electrically connected to the power supply unit 11a through the fifth capacitor C5; a sixth capacitor is further integrated inside the driving module 10, and the PFC overcurrent protection unit 11f is electrically connected to the power supply unit 11a through the sixth capacitor C6. The fifth capacitor C5 and the sixth capacitor C6 are filter capacitors.
The above is only a part or preferred embodiment of the present invention, and neither the text nor the drawings should limit the scope of the present invention, and all equivalent structural changes made by the present specification and the contents of the drawings or the related technical fields directly/indirectly using the present specification and the drawings are included in the scope of the present invention.
Claims (10)
1. The semiconductor circuit is characterized by comprising a driving module, an inverter module and a temperature detection module, wherein the inverter module and the temperature detection module are electrically connected with the driving module, a level input port for inputting a level signal is arranged on the driving module, the level input port is used for being electrically connected with an external MCU (micro control unit), the driving module controls the start and stop of a temperature protection function through the level signal input by the level input port, and the driving module controls the start and stop of the temperature protection function according to the temperature signal fed back by the temperature detection module.
2. The semiconductor circuit of claim 1, wherein the driving module has a VDD pin, an RCIN pin, a COM pin, an ITRIP pin, a PFCTRIP pin, a VSS pin, a TH pin, a TF pin, an LO1 pin, an LO2 pin, an LO3 pin, a PFCOUT pin, an HO1 pin, a VS1 pin, an HO2 pin, a VS2 pin, an HO3 pin, and a VS3 pin, the VDD pin, the VSS pin, and the TH pin are electrically connected to the temperature detection module, the TF pin is the level input port, the LO1 pin, an LO2 pin, an LO3 pin, an HO1 pin, a VS1 pin, an HO2 pin, a VS2 pin, an HO3 pin, and a VS3 pin are electrically connected to the inverter module, and the COM pin is electrically connected to the VSS pin.
3. The semiconductor circuit of claim 2, wherein the temperature sensing module comprises a first capacitor, a first resistor, a second resistor, and a thermistor, wherein the VDD pin is electrically connected to the first capacitor, the first resistor, and the second resistor, respectively, the first capacitor is further electrically connected to the VSS pin, the first resistor is further electrically connected to the TH pin and the VSS pin through the thermistor, and the second resistor is further electrically connected to the RCIN pin.
4. The semiconductor circuit of claim 3, wherein the temperature sensing module further comprises a second capacitor, a third capacitor, and a fourth capacitor, the RCIN pin is further electrically connected to the VSS pin through the second capacitor, the ITRIP pin is electrically connected to the VSS pin through the third capacitor, and the PFCTRRIP pin is electrically connected to the VSS pin through the fourth capacitor.
5. The semiconductor circuit of claim 2, further comprising a PFC module electrically connected to the PFCOUT pin.
6. The semiconductor circuit of claim 5, wherein the PFC module comprises an insulated gate bipolar transistor and a diode, wherein a G terminal of the insulated gate bipolar transistor is electrically connected to the PFCOUT pin, and wherein a C terminal of the insulated gate bipolar transistor is electrically connected to a cathode of the diode.
7. The semiconductor circuit according to claim 2, wherein a power supply unit, an under-voltage power supply protection unit, a high-side drive unit, an error reporting/enabling unit, an over-current protection unit, a PFC over-current protection unit, an interlock and dead zone unit, a low-side drive unit, a logic unit, a PFC drive unit, and a temperature control unit are integrated in the drive module.
8. The semiconductor circuit of claim 7, wherein the driving module further has a HIN1 pin, a HIN2 pin, a HIN3 pin, a LIN1 pin, a LIN2 pin, a LIN3 pin, a PFCIN pin, an FLT pin, a VB1 pin, a VB2 pin and a VB3 pin, the power supply unit is electrically connected with the VDD pin, the VSS pin, an under-voltage power protection unit and the high side driving unit respectively, the high side driving unit is electrically connected with the VB1 pin, the VS1 pin, the VB2 pin, the VS2 pin, the VB3 pin, the VS3 pin, the HIN1 pin, the HIN2 pin, the HIN3, the HO1 pin, the HO2 pin and the HO3 pin, the error/enable unit is electrically connected with the FLT and high side driving units respectively, the over-current protection unit is electrically connected with the ITRIP and high side driving units respectively, and the over-current protection unit is electrically connected with the PFRIP driving unit and the high side driving unit respectively, the interlocking and dead zone unit is respectively electrically connected with the high-side driving unit and the low-side driving unit, the low-side driving unit is respectively electrically connected with the LO1 pin, the LO2 pin, the LO3 pin and the high-side driving unit, the logic unit is respectively electrically connected with the PFCIN pin, the high-side driving unit and the PFC driving unit, the PFC driving unit is also electrically connected with the PFCOUT, and the temperature control unit is respectively electrically connected with the TH pin, the TF pin and the high-side driving unit.
9. The semiconductor circuit according to claim 8, wherein a fifth capacitor is further integrated inside the driving module, and the overcurrent protection unit is electrically connected to the power supply unit through the fifth capacitor.
10. The semiconductor circuit according to claim 8, wherein a sixth capacitor is further integrated inside the driving module, and the PFC overcurrent protection unit is electrically connected to the power supply unit through the sixth capacitor.
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| CN202111281059.9A CN114123830A (en) | 2021-10-29 | 2021-10-29 | Semiconductor circuit having a plurality of transistors |
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| CN202111281059.9A CN114123830A (en) | 2021-10-29 | 2021-10-29 | Semiconductor circuit having a plurality of transistors |
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