CN114121842A - MOS transistor with pin protection function - Google Patents
MOS transistor with pin protection function Download PDFInfo
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- CN114121842A CN114121842A CN202111340624.4A CN202111340624A CN114121842A CN 114121842 A CN114121842 A CN 114121842A CN 202111340624 A CN202111340624 A CN 202111340624A CN 114121842 A CN114121842 A CN 114121842A
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- 238000004140 cleaning Methods 0.000 claims abstract description 38
- 239000000428 dust Substances 0.000 claims description 30
- 229920000742 Cotton Polymers 0.000 claims description 24
- 230000005540 biological transmission Effects 0.000 claims description 21
- 238000005192 partition Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 230000017525 heat dissipation Effects 0.000 claims description 5
- 239000010408 film Substances 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 1
- 238000004804 winding Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 14
- 239000004519 grease Substances 0.000 description 12
- 229920001296 polysiloxane Polymers 0.000 description 12
- 239000004575 stone Substances 0.000 description 6
- 238000003825 pressing Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
- B08B1/16—Rigid blades, e.g. scrapers; Flexible blades, e.g. wipers
- B08B1/165—Scrapers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
The invention relates to the technical field of transistors, and discloses an MOS transistor with a pin protection function, which comprises a transistor body, wherein the front part and the rear part of the transistor body are fixedly connected with heat conducting plates, the top part and the bottom part of each heat conducting plate are fixedly connected with rear radiating fins, the front part and the rear part of the transistor body are respectively provided with a sliding chute, the top part and the bottom part of the transistor body are respectively connected with an upper fixing plate and a lower fixing plate in a sliding manner, the bottom part of the upper fixing plate and the top part of the lower fixing plate are respectively connected with a front radiating fin in a fixed manner, the inner walls of the upper fixing plate and the lower fixing plate are respectively provided with a cleaning device, the bottom part of the upper fixing plate is fixedly connected with a guide pillar, the inner wall of the lower fixing plate is fixedly connected with a sleeve, and the inner wall of the sleeve is connected with a button in a sliding manner through a spring, the pins can be protected, and the pins are prevented from colliding in the transportation process of the transistor.
Description
Technical Field
The invention relates to the technical field of transistors, in particular to an MOS transistor with a pin protection function.
Background
The transistor is a solid semiconductor device (including diodes, triodes, field effect transistors, thyristors and the like, and sometimes particularly referred to as a bipolar device), has multiple functions of detection, rectification, amplification, switching, voltage stabilization, signal modulation and the like, can be used as a variable current switch, can control output current based on input voltage, and is different from common mechanical switches (such as Relay and switch), and the transistor controls the on-off of the transistor by utilizing an electric signal, so that the switching speed can be very high, and the switching speed in a laboratory can reach more than 100 GHz.
When the transistor is transported in a box, the pins of the transistor are exposed outside, so that collision among the pins or impact between the pins and the inner wall of the box body can be caused, and further the pins are broken or deformed, so that subsequent welding and installation of the transistor cannot be carried out, and the normal use of the transistor is influenced.
Disclosure of Invention
The technical problem to be solved by the present invention is to provide a MOS transistor with a pin protection function, aiming at the above-mentioned deficiencies in the prior art.
In order to solve the technical problems, the invention adopts the technical scheme that: a MOS transistor with a pin protection function comprises a transistor body, wherein heat conducting plates are fixedly connected to the front portion and the rear portion of the transistor body, rear radiating fins are fixedly connected to the top and the bottom of each heat conducting plate, sliding grooves are formed in the front portion and the rear portion of the transistor body, an upper fixing plate and a lower fixing plate are respectively connected to the top and the bottom of the transistor body in a sliding mode, front radiating fins are fixedly connected to the bottom of the upper fixing plate and the top of the lower fixing plate, through holes are formed in the surface of the front radiating fins at the top of the lower fixing plate, cleaning devices are arranged on the inner walls of the upper fixing plate and the lower fixing plate, guide pillars are fixedly connected to the bottom of the upper fixing plate, air holes are formed in the inner wall of the lower fixing plate, a sleeve is fixedly connected to the inner wall of the lower fixing plate, and a button is slidably connected to the inner wall of the sleeve through a spring, the upper fixing plate and the lower fixing plate are made of heat conducting materials.
Preferably, the cleaning device comprises a heat conducting paste, a film is bonded on the surface of the heat conducting paste, a supporting block is fixedly connected to the left side of the transistor body, and a transmission rod is rotatably connected to the inner wall of the supporting block.
Preferably, the surface of the transmission rod is sleeved with a rubber sleeve, one side, far away from the heat conducting paste, of the film is fixedly connected with the surface of the transmission rod, and the bottom of the heat conducting paste is fixedly bonded with the inner wall of the lower fixing plate.
Preferably, the inner wall of the lower fixing plate is provided with a dust removal device, the inner wall of the lower fixing plate is provided with a clamping groove, the inner wall of the lower fixing plate is fixedly connected with a limiting rod, and the clamping groove is in contact with the surface of the transmission rod.
Preferably, the dust removing device comprises a cleaning block, the top of the cleaning block is rotatably connected with a cleaning plate, the inner wall of the cleaning block is fixedly connected with a partition plate, and the inner wall of the cleaning block is fixedly connected with an air bag.
Preferably, the surface of the cleaning plate is provided with holes, the air bag is positioned above the partition plate, and the bottom of the cleaning block is fixedly connected with the inner wall of the lower fixing plate.
Preferably, the inner wall of the cleaning block is connected with a sliding plate through a spring in a sliding manner, the inner wall of the cleaning block is fixedly connected with a supporting rod, the inner wall of the partition plate is in threaded connection with a screw rod, the bottom end of the screw rod is fixedly connected with a rotary table, cotton threads are wound on the surface of the rotary table, a baffle is fixedly connected to the top of the rotary table, and a rotary plate is rotatably connected to the inner wall of the baffle.
Preferably, the surface of cotton thread contacts with the inner wall of bracing piece, slide and clearance piece respectively, the one end that the carousel was kept away from to the cotton thread is connected with the fixed surface of film, the quantity of screw rod is provided with a plurality of.
By adopting the technical scheme, the invention can bring the following beneficial effects:
1. this MOS transistor with pin protect function, the upper fixed plate is pressed on the bottom plate, and the guide pillar under the upper fixed plate can be inserted in the through-hole in the bottom plate, and can blow off the gas in the bottom plate from the hole of the last preceding fin of bottom plate through moving down of guide pillar, and then after upper fixed plate and bottom plate merge, upper and lower two pairs of preceding fins can cross closure, and then can make the preceding fin in the upper fixed plate plug up the hole in the preceding fin on the bottom plate, and then realize negative pressure in the bottom plate, can tightly hold the upper fixed plate, and then can make upper fixed plate and bottom plate protect the pin on the transistor, prevent that the pin from colliding in the transportation, played the effect to pin protection.
2. This MOS transistor with pin protect function, through-hole intercommunication on can making the through-hole on the button and the sleeve through pressing the button, at this moment external gas will get into in the bottom plate, thereby make pressure balance in the bottom plate, and then can part upper fixed plate and bottom plate, the slip of rethread gag lever post in the spout, can open upper fixed plate and bottom plate and slide to the right side, and then fix the surface at the transistor, because the material of upper fixed plate and bottom plate is the heat conduction material, and then can absorb heat to the transistor, increase the area of contact with the air, can promote the radiating effect of transistor.
3. This MOS transistor with pin protect function, when the fin moved right before upper fixed plate and bottom plate drive, preceding fin can crisscross the surperficial slip of fin in back, probably have the dust and accompany the small stone even between the fin in the transportation, at this moment gliding preceding fin can release the dust and the small stone on fin surface in back, prevent that the fin injects back fin before dust and stone influence, lead to can't fix through frictional force between preceding fin and the back fin, the existence of dust also can influence the back fin and give preceding fin with the heat transfer, be unfavorable for the heat dissipation.
4. This MOS transistor with pin protect function, upper fixed plate and bottom plate move when pulling open the back right, and the transfer line can roll at the draw-in groove, can drive the transfer line through frictional force and rotate, and rotatory transfer line can tear the film on heat conduction surface and roll up, and at this moment upper fixed plate and bottom plate can have the heat conduction between when fixing the transistor surface and paste to can increase the heat conduction efficiency of transistor, strengthened the radiating effect.
5. This MOS transistor with pin protect function, when upper fixed plate and bottom plate moved to the right, the clearance board at clearance piece top can with transistor surface contact to scrape the dust on transistor surface when removing, the stickup on transistor surface's existence and heat conduction effect prevents follow-up heat conduction.
6. This MOS transistor with pin protect function, if the transistor is after placing for a long time, dry phenomenon can appear very probably in the surface of heat conduction subsides, at this moment the film can stimulate the cotton thread and remove when being rolled up by the transfer line, simultaneously clearance board and transistor surface contact and by reverse promotion rotation, clearance board promotes the slide and removes, at this moment the hole on the slide will communicate with the hole on clearance piece surface, the cotton thread of at this moment pulling can glue and adhere to the inside heat conduction silicone grease of clearance piece and shift out together, at this moment the cotton thread can take heat conduction silicone grease to fall on dry heat conduction subsides, thereby can reuse, prevent that long-time placing from leading to heat conduction subsides unable the use.
7. This MOS transistor with pin protect function, can stimulate the carousel rotatory when the cotton thread is by the pulling, the screw rod that the carousel can is rotatory, screw rod rotation can pass through the screw thread rebound on the baffle inner wall, the screw rod that moves up can extrude the gasbag, the gasbag can be blown off the dust that the air scraped the clearance board surface by the extrusion and blow off, prevent that the dust from piling up before clearance board and transistor surface, influence the clearance effect of dust, simultaneously can drive the baffle rotation when the carousel is rotatory, the baffle can drive the rotor plate and stir the inside heat conduction silicone grease of clearance piece, increase the mobility of heat conduction silicone grease, make things convenient for its surface attached to the cotton thread.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic diagram of a lower fixing plate structure according to the present invention;
FIG. 3 is a half-sectional view of the lower retaining plate of the present invention;
FIG. 4 is a half-sectional view of the push button of the present invention;
FIG. 5 is a right side view of the lower mounting block of the present invention;
FIG. 6 is a schematic view of a cleaning apparatus according to the present invention;
FIG. 7 is a half sectional view of the dust removing device of the present invention.
In the figure: 1. a transistor body; 2. a heat conducting plate; 3. a rear heat sink; 4. a chute; 5. an upper fixing plate; 6. a lower fixing plate; 7. a front heat sink; 8. a cleaning device; 81. heat conducting paste; 82. a film; 83. a dust removal device; 831. cleaning the block; 832. cleaning the plate; 833. an air bag; 834. a partition plate; 835. a slide plate; 836. a support bar; 837. cotton threads; 838. a screw; 839. a turntable; 8311. a baffle plate; 8312. a rotating plate; 84. a support block; 85. a transmission rod; 86. a card slot; 87. a limiting rod; 9. a guide post; 10. air holes; 11. a button; 12. a sleeve.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Examples
A MOS transistor with pin protection function is disclosed, as shown in figures 1-7, comprising a transistor body 1, wherein the front part and the rear part of the transistor body 1 are fixedly connected with a heat conducting plate 2, the top part and the bottom part of the heat conducting plate 2 are fixedly connected with a rear radiating fin 3, the front part and the rear part of the transistor body 1 are respectively provided with a sliding chute 4, the top part and the bottom part of the transistor body 1 are respectively connected with an upper fixing plate 5 and a lower fixing plate 6 in a sliding way, the bottom part of the upper fixing plate 5 and the top part of the lower fixing plate 6 are respectively and fixedly connected with a front radiating fin 7, the surface of the front radiating fin 7 at the top part of the lower fixing plate 6 is provided with a through hole, the inner walls of the upper fixing plate 5 and the lower fixing plate 6 are respectively provided with a cleaning device 8, the bottom part of the upper fixing plate 5 is fixedly connected with a guide pillar 9, the inner wall of the lower fixing plate 6 is provided with an air hole 10, the inner wall of the lower fixing plate 6 is fixedly connected with a sleeve 12, the inner wall of the sleeve 12 is connected with a button 11 in a sliding way through a spring, through-hole and the through-hole intercommunication on the sleeve 12 on the button 11 can be made through pressing the button 11, and at this moment during external gas will get into bottom plate 6 to make pressure balance in the bottom plate 6, and then conveniently part upper fixed plate 5 and bottom plate 6, the material of upper fixed plate 5 and bottom plate 6 is the heat conduction material.
In this embodiment, the cleaning device 8 includes a heat conducting patch 81, a film 82 is bonded on the surface of the heat conducting patch 81, a supporting block 84 is fixedly connected to the left side of the transistor body 1, a transmission rod 85 is rotatably connected to the inner wall of the supporting block 84, the heat conducting efficiency of the transistor can be increased due to the heat conducting patch 81, and the heat dissipation effect is enhanced.
Further, the surface of the transmission rod 85 is sleeved with a rubber sleeve, one side, far away from the heat conducting paste 81, of the film 82 is fixedly connected with the surface of the transmission rod 85, the bottom of the heat conducting paste 81 is fixedly bonded with the inner wall of the lower fixing plate 6, the rubber sleeve on the surface of the transmission rod 85 can increase the friction force of the transmission rod 85, and then the transmission rod 85 is driven to rotate more easily to wind the film 82.
Furthermore, the inner wall of the lower fixing plate 6 is provided with the dust removing device 83, the inner wall of the lower fixing plate 6 is provided with the clamping groove 86, the inner wall of the lower fixing plate 6 is fixedly connected with the limiting rod 87, the clamping groove 86 is in mutual contact with the surface of the transmission rod 85, the limiting rod 87 can slide in the sliding groove 4, the upper fixing plate 5 and the lower fixing plate 6 are pressed and gathered after the limiting rod 87 slides to the rightmost side, and then installation can be completed.
In addition, dust collector 83 is including clearance piece 831, the top of clearance piece 831 is rotated and is connected with clearance board 832, the inner wall fixedly connected with baffle 834 of clearance piece 831, the inner wall fixedly connected with gasbag 833 of clearance piece 831, in the time of upper fixing plate 5 and lower fixing plate 6 move to the right, clearance board 832 at clearance piece 831 top can with transistor surface contact, and scrape the surperficial dust of transistor down in the removal, the existence of dust can influence the stickness and the heat conduction effect of heat conduction subsides 81 when preventing follow-up heat conduction subsides 81 from gluing on the transistor surface.
In addition, holes are formed in the surface of the cleaning plate 832, the air bag 833 is located above the partition plate 834, the bottom of the cleaning block 831 is fixedly connected with the inner wall of the lower fixing plate 6, and the air bag 833 can blow the scraped dust, so that the dust is prevented from being accumulated in front of the surfaces of the cleaning plate 832 and the transistors all the time and the cleaning effect of the dust is prevented from being influenced.
It should be noted that the inner wall of the cleaning block 831 is slidably connected with a sliding plate 835 through a spring, the inner wall of the cleaning block 831 is fixedly connected with a support rod 836, the inner wall of the partition 834 is in threaded connection with a screw 838, the bottom end of the screw 838 is fixedly connected with a rotating plate 839, the surface of the rotating plate 839 is wound with a cotton thread 837, the top of the rotating plate 839 is fixedly connected with a baffle 8311, the inner wall of the baffle 8311 is rotatably connected with a rotating plate 8312, if the transistor is left for a long time, the surface of the heat conducting paste 81 is likely to dry up, at this time, the film 82 pulls the cotton thread 837 to move when being rolled up by the transmission rod 85, meanwhile, the cleaning plate 832 is in contact with the surface of the transistor and is pushed to rotate reversely, the cleaning plate 832 pushes the sliding plate 835 to move, at this time, holes on the sliding plate 835 are communicated with holes on the surface of the cleaning block 831, at this time, the pulled cotton thread 837 adheres to the heat conducting silicone grease inside the cleaning block 831 to move out together, at this time, the cotton thread 837 carries the heat-conducting silicone grease to fall on the dried heat-conducting paste 81, so that the heat-conducting paste can be used again, and the heat-conducting paste 81 cannot be used due to long-time placement.
It is worth to say that the surface of cotton 837 contacts with the inner wall of bracing piece 836, slide 835 and clearance piece 831 respectively, and the one end that the cotton 837 kept away from carousel 839 is connected with the fixed surface of film 82, and the quantity of screw 838 is provided with a plurality ofly, can be with even the spreading of heat conduction silicone grease on heat conduction pastes 81 through a plurality of screw 838 and a plurality of cotton 837, if heat conduction pastes 81 intact, this existence of silicone grease can increase heat conduction effect.
According to the working principle, the upper fixing plate 5 is pressed on the lower fixing plate 6, the guide posts 9 under the upper fixing plate 5 can be inserted into the through holes in the lower fixing plate 6, and the gas in the lower fixing plate 6 can be blown out from the holes in the front radiating fins 7 on the lower fixing plate 6 through downward movement of the guide posts 9, so that after the upper fixing plate 5 and the lower fixing plate 6 are combined, the upper and lower pairs of front radiating fins 7 can be closed in a crossed manner, the holes in the front radiating fins 7 on the lower fixing plate 6 can be blocked by the front radiating fins 7 in the upper fixing plate 5, the negative pressure in the lower fixing plate 6 can be realized, the upper fixing plate 5 can be tightly sucked, the pins on the transistors can be protected by the upper fixing plate 5 and the lower fixing plate 6, the pins can be prevented from colliding in the transportation process, and the pin protection effect can be achieved; the through hole on the button 11 can be communicated with the through hole on the sleeve 12 by pressing the button 11, at the moment, external gas can enter the lower fixing plate 6, so that the air pressure in the lower fixing plate 6 is balanced, the upper fixing plate 5 and the lower fixing plate 6 can be separated, the upper fixing plate 5 and the lower fixing plate 6 can be opened and then slide to the right side by sliding the limiting rod 87 in the sliding groove 4, and then are fixed on the surface of the transistor, and as the upper fixing plate 5 and the lower fixing plate 6 are made of heat conducting materials, the transistor can be absorbed by heat, the contact area with air is increased, and the heat dissipation effect of the transistor can be improved; when the upper fixing plate 5 and the lower fixing plate 6 drive the front radiating fins 7 to move rightwards, the front radiating fins 7 can slide on the surfaces of the rear radiating fins 3 in a staggered mode, dust and even small stones can possibly exist between the rear radiating fins 3 in the transportation process, at the moment, the front radiating fins 7 can push out the dust and the small stones on the surfaces of the rear radiating fins 3, the fact that the front radiating fins 7 are inserted into the rear radiating fins 3 due to the influence of the dust and the stones is prevented, the front radiating fins 7 and the rear radiating fins 3 cannot be fixed through friction force, meanwhile, the heat of the rear radiating fins 3 can be influenced to be transferred to the front radiating fins 7 due to the existence of the dust, and heat dissipation is not facilitated; when the upper fixing plate 5 and the lower fixing plate 6 move rightwards after being pulled apart, the transmission rod 85 can roll in the clamping groove 86, the transmission rod 85 can be driven to rotate through friction force, the rotating transmission rod 85 can tear off and roll up the film 82 on the surface of the heat conducting sticker 81, and the heat conducting sticker 81 exists between the upper fixing plate 5 and the lower fixing plate 6 when being fixed on the surface of a transistor, so that the heat conducting efficiency of the transistor can be increased, and the heat radiating effect is enhanced; when the upper fixing plate 5 and the lower fixing plate 6 move to the right, the cleaning plate 832 at the top of the cleaning block 831 can contact with the surface of the transistor and scrape off dust on the surface of the transistor while moving, so that the adhesion and the heat conduction effect of the heat conducting paste 81 can be prevented from being influenced by the existence of dust when the subsequent heat conducting paste 81 is adhered to the surface of the transistor; if the transistor is placed for a long time, the surface of the heat conducting paste 81 is likely to dry up, at this time, the film 82 pulls the cotton thread 837 to move when being rolled up by the transmission rod 85, meanwhile, the cleaning plate 832 is in contact with the surface of the transistor and is reversely pushed to rotate, the cleaning plate 832 pushes the sliding plate 835 to move, at this time, holes in the sliding plate 835 are communicated with holes in the surface of the cleaning block 831, at this time, the pulled cotton thread 837 is adhered with the heat conducting silicone grease in the cleaning block 831 to move out together, at this time, the cotton thread 837 takes the heat conducting silicone grease to fall on the dry heat conducting paste 81, so that the heat conducting paste 81 can be used again, and the heat conducting paste 81 cannot be used due to long-time placement is prevented; can pull the carousel 839 rotatory when cotton line 837 is pulled, the screw 838 that carousel 839 can be rotatory, the screw 838 is rotatory can upwards move through the screw thread on the baffle 834 inner wall, the screw 838 that moves up can extrude gasbag 833, gasbag 833 can be blown out the dust that the air scraped the clearance board 832 surface by the extrusion and blow off, prevent that the dust from piling up before clearance board 832 and transistor surface, influence the clearance effect of dust, simultaneously carousel 839 can drive baffle 8311 rotatory when rotatory, baffle 8311 can drive rotor plate 8312 and stir the inside heat conduction silicone grease of clearance piece 831, increase the mobility of heat conduction silicone grease, make things convenient for it to attach to the surface at cotton line 837.
The present invention provides a MOS transistor with pin protection function, and many methods and ways for implementing the technical solution are provided, and the above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, many modifications and refinements can be made without departing from the principle of the present invention, and these modifications and refinements should also be regarded as the protection scope of the present invention. All the components not specified in the present embodiment can be realized by the prior art.
Claims (8)
1. A MOS transistor with pin protection, comprising a transistor body (1), characterized in that: the heat dissipation transistor comprises a transistor body (1), wherein heat conducting plates (2) are fixedly connected to the front portion and the rear portion of the transistor body (1), rear radiating fins (3) are fixedly connected to the top portion and the bottom portion of the heat conducting plates (2), sliding grooves (4) are formed in the front portion and the rear portion of the transistor body (1), an upper fixing plate (5) and a lower fixing plate (6) are respectively connected to the top portion and the bottom portion of the transistor body (1) in a sliding mode, front radiating fins (7) are fixedly connected to the bottom portion of the upper fixing plate (5) and the top portion of the lower fixing plate (6), through holes are formed in the surface of the front radiating fins (7) on the top portion of the lower fixing plate (6), cleaning devices (8) are arranged on the inner walls of the upper fixing plate (5) and the lower fixing plate (6), guide pillars (9) are fixedly connected to the bottom portion of the upper fixing plate (5), and air holes (10) are formed in the inner wall of the lower fixing plate (6), the inner wall fixedly connected with sleeve (12) of bottom plate (6), the inner wall of sleeve (12) has button (11) through spring sliding connection, the material of upper fixed plate (5) and bottom plate (6) is the heat conduction material.
2. The MOS transistor with pin protection according to claim 1, wherein: the cleaning device (8) comprises a heat conduction sticker (81), a thin film (82) is bonded on the surface of the heat conduction sticker (81), a supporting block (84) is fixedly connected to the left side of the transistor body (1), and a transmission rod (85) is rotatably connected to the inner wall of the supporting block (84).
3. The MOS transistor with pin protection according to claim 2, wherein: the surface of the transmission rod (85) is sleeved with a rubber sleeve, one side, far away from the heat conducting paste (81), of the film (82) is fixedly connected with the surface of the transmission rod (85), and the bottom of the heat conducting paste (81) is fixedly bonded with the inner wall of the lower fixing plate (6).
4. A MOS transistor with pin protection according to claim 3, wherein: the dust removal device (83) is arranged on the inner wall of the lower fixing plate (6), a clamping groove (86) is formed in the inner wall of the lower fixing plate (6), a limiting rod (87) is fixedly connected to the inner wall of the lower fixing plate (6), and the clamping groove (86) is in contact with the surface of the transmission rod (85).
5. The MOS transistor with pin protection according to claim 4, wherein: dust collector (83) is including clearance piece (831), the top of clearance piece (831) is rotated and is connected with clearance board (832), the inner wall fixedly connected with baffle (834) of clearance piece (831), the inner wall fixedly connected with gasbag (833) of clearance piece (831).
6. The MOS transistor with pin protection according to claim 5, wherein: holes are formed in the surface of the cleaning plate (832), the air bag (833) is located above the partition plate (834), and the bottom of the cleaning block (831) is fixedly connected with the inner wall of the lower fixing plate (6).
7. The MOS transistor with pin protection according to claim 5, wherein: the inner wall of clearance piece (831) has slide plate (835) through spring sliding connection, the inner wall fixedly connected with bracing piece (836) of clearance piece (831), the inner wall threaded connection of baffle (834) has screw rod (838), the bottom fixedly connected with carousel (839) of screw rod (838), the surface winding of carousel (839) has cotton thread (837), the top fixedly connected with baffle (8311) of carousel (839), the inner wall rotation of baffle (8311) is connected with rotor plate (8312).
8. The MOS transistor with pin protection according to claim 7, wherein: the surface of cotton thread (837) contacts with the inner wall of bracing piece (836), slide (835) and clearance piece (831) respectively, the one end that carousel (839) was kept away from in cotton thread (837) is connected with the fixed surface of film (82), the quantity of screw rod (838) is provided with a plurality of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111340624.4A CN114121842A (en) | 2021-11-12 | 2021-11-12 | MOS transistor with pin protection function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111340624.4A CN114121842A (en) | 2021-11-12 | 2021-11-12 | MOS transistor with pin protection function |
Publications (1)
| Publication Number | Publication Date |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117199021A (en) * | 2023-08-17 | 2023-12-08 | 先之科半导体科技(东莞)有限公司 | High gate breakdown voltage field effect transistor |
| CN117525152A (en) * | 2024-01-04 | 2024-02-06 | 江西联创特种微电子有限公司 | MOS field effect transistor |
-
2021
- 2021-11-12 CN CN202111340624.4A patent/CN114121842A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117199021A (en) * | 2023-08-17 | 2023-12-08 | 先之科半导体科技(东莞)有限公司 | High gate breakdown voltage field effect transistor |
| CN117199021B (en) * | 2023-08-17 | 2024-04-30 | 先之科半导体科技(东莞)有限公司 | High gate breakdown voltage field effect transistor |
| CN117525152A (en) * | 2024-01-04 | 2024-02-06 | 江西联创特种微电子有限公司 | MOS field effect transistor |
| CN117525152B (en) * | 2024-01-04 | 2024-04-12 | 江西联创特种微电子有限公司 | MOS field effect transistor |
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