CN114121698A - Detection chip and detection system - Google Patents

Detection chip and detection system Download PDF

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Publication number
CN114121698A
CN114121698A CN202010900245.5A CN202010900245A CN114121698A CN 114121698 A CN114121698 A CN 114121698A CN 202010900245 A CN202010900245 A CN 202010900245A CN 114121698 A CN114121698 A CN 114121698A
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CN
China
Prior art keywords
quantum well
detection chip
chip
region
semiconductor wafer
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Pending
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CN202010900245.5A
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Chinese (zh)
Inventor
郑兆祯
丁新琪
廖桂波
吴阳烽
焦旺
王菊
涂庆明
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Shenzhen Zhongguang Industrial Technology Research Institute
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Shenzhen Zhongguang Industrial Technology Research Institute
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Priority to CN202010900245.5A priority Critical patent/CN114121698A/en
Priority to PCT/CN2021/112615 priority patent/WO2022042344A1/en
Publication of CN114121698A publication Critical patent/CN114121698A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
    • G01M11/0257—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
    • G01M11/0278—Detecting defects of the object to be tested, e.g. scratches or dust
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0042—On wafer testing, e.g. lasers are tested before separating wafer into chips

Abstract

The application discloses detect chip, a serial communication port, detect chip embedding semiconductor wafer body for carry out photoluminescence test, it includes to detect the chip: and the quantum well intermixing region and the non-quantum well intermixing region are arranged periodically or randomly, wherein the particle doping of the quantum well intermixing region is the same as the particle doping of the quantum well doping layer contained in the semiconductor wafer body. The laser beams are received through the quantum well intermixing areas to generate photoluminescence reaction, and the light rays emitted by photoluminescence of the quantum well intermixing areas interfere with each other, so that the intensity of wavelength spectrum line signals emitted by the detection chip is enhanced, the blue shift condition of the wavelength of the detection chip can be measured by using a conventional spectrometer, and the anti-COD characteristic judgment of the semiconductor wafer is rapidly realized.

Description

Detection chip and detection system
Technical Field
The application relates to the field of lasers, in particular to a detection chip and a detection system.
Background
Semiconductor lasers have been widely used in recent years in the fields of industry, medical treatment, beauty, and the like, because of their advantages of small size, high efficiency, long life, wide coverage wavelength range, and the like. In the prior art, a semiconductor laser is easy to generate a COMD (catastropic Optical Mirror Damage) on a light-emitting surface, and the COMD is one of important reasons for restricting high-power light output and reliability of the semiconductor laser; the light absorption of the light-emitting surface is reduced or eliminated, and the threshold power of the generated COMD can be effectively improved.
The method for reducing the optical absorption of the light-emitting surface of the semiconductor laser generally increases the forbidden bandwidth of the semiconductor material at the light-emitting surface, and in the prior art, a Quantum Well Intermixing (QWI) technology is generally adopted to increase the forbidden bandwidth of the quantum well material at the light-emitting surface of the semiconductor laser, while the forbidden bandwidth of the quantum well material in other areas, especially below a current injection area, is kept unchanged, so that the photoluminescence (photoluminescence) of the quantum well material at the light-emitting surface of the semiconductor laser generates a blue shift relative to the laser wavelength of the laser, or the wavelength blue shift condition of the photoluminescence is used as an important judgment basis for the quantum well intermixing of the semiconductor laser.
The photoluminescence intensity of the quantum well mixed of the conventional semiconductor laser is weak, and a large irradiation area or high-power laser irradiation is needed to generate a spectrum test signal with enough intensity, so that the produced semiconductor laser needs to sacrifice a large test area, and meanwhile, the test area cannot be used for a final product. Therefore, at present, photoluminescence of the semiconductor laser is only used for monitoring an epitaxial wafer, and in a chip process, an empty wafer is often used for measurement after plating and heat treatment, and is not used for truly producing a semiconductor wafer.
Disclosure of Invention
The application provides a detection chip and a detection system, which are used for solving the technical problem in the prior art.
In order to solve the above technical problem, the present application provides a detection chip, the detection chip imbeds the semiconductor wafer body for carry out photoluminescence test, the detection chip includes:
and the quantum well intermixing region and the non-quantum well intermixing region are arranged periodically or randomly, wherein the particle doping of the quantum well intermixing region is the same as the particle doping of the quantum well doping layer contained in the semiconductor wafer body.
In one embodiment, the quantum well intermixed regions are test lines, the test lines alternating with the non-quantum well intermixed regions.
In one embodiment, the quantum well intermixed regions are linearly arranged, and the distances between any adjacent quantum well intermixed regions are equal or unequal.
In an embodiment, the quantum well intermixed region is a test pattern, the non-quantum well intermixed region is disposed around the test pattern, and the plurality of test patterns are arranged in a matrix.
In an embodiment, the test pattern comprises at least one of a square, a circle, a triangle, or a polygon.
In one embodiment, the total area of the quantum well intermixing regions is 0.5mm2-1.5mm2。
In one embodiment, the ratio of the total area of the plurality of quantum well intermixing regions to the total area of the plurality of non-quantum well intermixing regions is in the range of 5-10.
In an embodiment, a distance between a surface of the quantum well intermixing region and a surface of the non-quantum well intermixing region is less than 2 μm.
In an embodiment, the detection chip further includes at least one alignment mark for alignment.
In order to solve the above technical problem, the present application further provides a detection system for testing the detection chip, including:
a semiconductor work table;
the laser light source is used for generating laser beams, and the laser beams irradiate the detection chip carried on the semiconductor workbench so as to enable the detection chip to generate photoluminescence reaction and emit light;
the spectrometer receives the light rays through the optical processing system, detects the light rays and measures the wavelength spectral line of the detection chip;
and the imaging system is connected with the spectrometer through a USB data line, images the wavelength spectral line and displays the blue shift condition of the wavelength spectral line so as to judge the anti-COD characteristic of the semiconductor wafer.
The beneficial effect of this application is: be different from prior art, the detection chip of this application is including quantum well that the cycle was arranged or was arranged at random and non-quantum well mixes the region, and is a plurality of through the mixed regional laser beam of receiving of a plurality of quantum wells in order to take place photoluminescence reaction, a plurality of quantum well mixes and takes place to interfere between the light of regional photoluminescence outgoing, makes the wavelength spectral line signal intensity of detection chip outgoing strengthens, utilizes conventional spectrum appearance can measure the blue circumstances of moving of the wavelength of detecting the chip, realizes semiconductor wafer's anti COD characteristic judgement fast, and convenient operation need not to use other high-priced equipment to detect, can improve detection efficiency, improves the productivity.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic plan view of one embodiment of a semiconductor wafer of the present application;
FIG. 2 is a schematic plan view of an embodiment of the detection chip of the present application;
FIG. 3 is a schematic plan view of a further embodiment of the detection chip of the present application;
FIG. 4 is a schematic plan view of a further embodiment of the detection chip of the present application;
FIG. 5 is a schematic plan view of a further embodiment of the detection chip of the present application;
FIG. 6 is a schematic cross-sectional view of an embodiment of a detection chip of the present application;
FIG. 7 is a schematic cross-sectional view of another embodiment of a detection chip of the present application;
FIG. 8 is a schematic cross-sectional view of another embodiment of a detection chip of the present application;
FIG. 9 is a schematic structural diagram of an embodiment of the detection system of the present application.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present application, the following describes the detection system and the detection chip provided in the present application in further detail with reference to the accompanying drawings and the detailed description. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The terms "first", "second", etc. in this application are used to distinguish between different objects and not to describe a particular order. Furthermore, the terms "include" and "have," as well as any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those steps or elements listed, but may alternatively include other steps or elements not listed, or inherent to such process, method, article, or apparatus.
Referring to fig. 1, fig. 1 is a schematic plan view of a semiconductor wafer according to an embodiment of the present invention. The semiconductor wafer 11 is embedded with a detection chip 12, the semiconductor wafer 11 is formed with a plurality of laser resonant cavities and cutting lines, N laser chips 13 with the same or different sizes can be formed by cutting or splitting, wherein the detection chip 12 further comprises at least one alignment mark 14 for alignment, further, the alignment mark 14 can be aligned with the alignment mark of the semiconductor wafer 11 when the detection chip 12 is embedded in the semiconductor wafer 11, so that the detection chip 12 can be rapidly embedded in the correct position of the semiconductor wafer 11, the alignment mark 14 can also be detected in a detection device, and the alignment mark can be rapidly positioned to the region of the detection chip 12 for detection, thereby improving the detection efficiency and the detection accuracy.
In the prior art, the laser chip 13 after being cut needs to be further subjected to photoluminescence PL test to measure the blue shift of the wavelength of QWI processed by thermal diffusion, ion implantation or strain layer, so as to further judge the anti-COD characteristic of the laser chip 13. In this embodiment, the photoluminescence test is directly performed on the detection chip 12 of the semiconductor wafer 11, so as to obtain the detection result of the anti-COD characteristic of the laser chip 13 related to the semiconductor wafer 11, that is, only one inspection is needed to obtain the average anti-COD characteristic of the N laser chips 13 on the semiconductor wafer 11, and each laser chip 13 does not need to be separately detected, so that the detection efficiency can be effectively improved, the preparation process of the laser chip 13 is simplified, and the productivity is improved.
Referring to fig. 2, fig. 2 is a schematic plan view of a detection chip according to an embodiment of the present disclosure. The detection chip 12 includes a quantum well intermixed region 122 and a non-quantum well intermixed region 121. The quantum well intermixing region 122 is the same as the QWI obtained by the whole semiconductor wafer 11 through thermal diffusion, ion implantation or strain layer processing, that is, the detection chip 12 is obtained by splicing the QWI obtained by the semiconductor wafer 11 through thermal diffusion, ion implantation or strain layer processing, the epitaxial structure of each quantum well intermixing region 122 of the detection chip 12 is the same as the QWI of the semiconductor wafer 11, and the COD resistance of the laser chip 13 included in the whole semiconductor wafer 11 can be judged through measuring photoluminescence of the quantum well intermixing region 122 of the detection chip 12 and through blue shift of the wavelength.
Alternatively, the quantum well intermixed region 122 of the detection chip 12 may be periodically arranged test lines or test patterns, or the quantum well intermixed region 122 of the detection chip 12 may be non-periodically arranged test lines and test patterns. This application is through arranging quantum well intermixing region 122 cycle or non-cycle, improves the total area of detection area, utilizes the emergent ray mutual interference of a plurality of quantum well intermixing regions 122 simultaneously, strengthens the signal intensity of the photoluminescence wavelength spectral line of detecting chip 12, and the wavelength blue shift condition of the QWI of semiconductor wafer 11 is detected out fast, and then is used for judging the anti COD ability of the laser chip 13 that semiconductor wafer 11 includes.
The detection chip 12 will be described below with reference to specific examples.
As shown in fig. 2, the quantum well intermixing regions 122 are test lines, the quantum well intermixing regions 122 and the non-quantum well intermixing regions 121 are alternately and periodically arranged, the quantum well intermixing regions 122 are linearly arranged, and the distances between any adjacent linearly arranged quantum well intermixing regions 122 are equal, that is, the widths of all the non-quantum well intermixing regions 121 are equal. Wherein the width d1 of the quantum well intermixing region 122 is much smaller than the width d2 of the non-quantum well intermixing region 121, so that the area of the quantum well intermixing region 122 is much smaller than the area of the non-quantum well intermixing region 121. The width d1 of the quantum well intermixing region 122 is 10 μm, and the width d2 of the non-quantum well intermixing region 121 is 90 μm. This application is through arranging quantum well intermixing region 122 cycle or non-cycle, improves the total area of detection area, utilizes the emergent ray mutual interference of a plurality of quantum well intermixing regions 122 simultaneously, strengthens the signal intensity of the photoluminescence wavelength spectral line of detecting chip 12, and the wavelength blue shift condition of the QWI of semiconductor wafer 11 is detected out fast, and then is used for judging the anti COD ability of the laser chip 13 that semiconductor wafer 11 includes.
Referring to fig. 3, fig. 3 is a schematic plan view of a detection chip according to another embodiment of the present disclosure. Unlike the above embodiments, in the present embodiment, the distances between any adjacent quantum well intermixed regions 122 are not equal, and the plurality of quantum well intermixed regions 122 are regularly distributed. As shown in fig. 3, the distance between the nth quantum well intermixing region 122 and the (n + 1) th quantum well intermixing region 122 is d3, the distance between the (n + 1) th quantum well intermixing region 122 and the (n + 2) th quantum well intermixing region 122 is d4, and d3 is greater than d4, where n is 1, 3, 5. Alternatively, in other embodiments, the number of quantum well intermixed regions 122 may be 8, 10, or 12, etc. This application is through arranging quantum well intermixing region 122 cycle or non-cycle, improves the total area of detection area, utilizes the emergent ray mutual interference of a plurality of quantum well intermixing regions 122 simultaneously, strengthens the signal intensity of the photoluminescence wavelength spectral line of detecting chip 12, and the wavelength blue shift condition of the QWI of semiconductor wafer 11 is detected out fast, and then is used for judging the anti COD ability of the laser chip 13 that semiconductor wafer 11 includes.
Referring further to fig. 4, fig. 4 is a schematic plan view of a detection chip according to another embodiment of the present application. As shown in fig. 4, the quantum well intermixed region 122 is a test pattern, the non-quantum well intermixed region 121 is disposed around the quantum well intermixed region 122, and the plurality of quantum well intermixed regions 122 are arranged in a matrix. The quantum well intermixed region 122 is square. Alternatively, in other embodiments, the quantum well intermixed region 122 may be circular, triangular, polygonal, or the like. The total area of the plurality of quantum-well intermixed regions 122 was S1, and the range of S1 was 0.5mm2-1.5mm2. Alternatively, S1 may be 1mm2. The total area of the non-detection region 121 is S2, and the ratio of S1 to S2 ranges from 5 to 10. This application is through arranging quantum well intermixing region 122 cycle or non-cycle, improves the total area of detection area, utilizes the emergent ray mutual interference of a plurality of quantum well intermixing regions 122 simultaneously, strengthens the signal intensity of the photoluminescence wavelength spectral line of detecting chip 12, and the wavelength blue shift condition of the QWI of semiconductor wafer 11 is detected out fast, and then is used for judging the anti COD ability of the laser chip 13 that semiconductor wafer 11 includes.
Referring to fig. 5, fig. 5 is a schematic plan view of a detection chip according to another embodiment of the present disclosure. Unlike the above embodiments, the quantum well intermixing region 122 in the present embodiment includes a triangular quantum well intermixing region 122 and a circular quantum well intermixing region 122. As shown in fig. 5, the triangular quantum well intermixed regions 122 and the circular quantum well intermixed regions 122 are alternately arranged such that the quantum well intermixed regions 122 are regularly and periodically arranged. Alternatively, in other embodiments, the quantum well intermixed region 122 can be formed by any two patterns of circle, triangle, or polygon, such as circle and rectangle, triangle and rectangle, etc.
In the prior art, the QWI region on the laser chip has a small area, typically 10 μm2A micro PL instrument is needed to detect a small-area, and is expensive, complex to operate and not beneficial to the requirement of actual production; on the other hand, the QWI has a weak photoluminescence intensity, and requires a large irradiation area or an increased laser power, which results in damage to the semiconductor wafer 11 located at the detection region, a reduction in throughput, and an increase in production cost. This application is through arranging quantum well intermixing region 122 cycle or non-cycle, improves the total area of detection area, utilizes the emergent ray mutual interference of a plurality of quantum well intermixing regions 122 simultaneously, strengthens the signal intensity of the photoluminescence wavelength spectral line of detecting chip 12, and the wavelength blue shift condition of the QWI of semiconductor wafer 11 is detected out fast, and then is used for judging the anti COD ability of the laser chip 13 that semiconductor wafer 11 includes.
Referring to fig. 6-8, fig. 6 is a schematic cross-sectional view of an embodiment of the detection chip of the present application, fig. 7 is a schematic cross-sectional plan view of another embodiment of the detection chip of the present application, and fig. 8 is a schematic cross-sectional view of another embodiment of the detection chip of the present application.
The distance between the surface of the quantum well intermixing region 122 and the surface of the non-detection region 121 is less than 2 μm, taking the linear quantum well intermixing region 122 of fig. 2 as an example. In other embodiments, the distance between the surface of the quantum well intermixing region 122 and the surface of the non-quantum well intermixing region 121 is less than 2 μm each.
As shown in fig. 6, the distance between the surface of the linear quantum well intermixed region 122 and the surface of the non-quantum well intermixed region 121 is h1, and h1 is less than 2 μm, i.e., h1 ranges from 0 μm to 2 μm. As shown in fig. 7, the distance between the surface of the linear quantum well intermixed region 122 and the surface of the non-quantum well intermixed region 121 is h2, and h2 is less than 2 μm, i.e., h2 ranges from 0 μm to 2 μm.
Alternatively, when h1 or h2 is 0 μm, as shown in fig. 8, the distance between the surface of the linear quantum well intermixing region 122 and the surface of the non-quantum well intermixing region 121 is 0 μm, i.e., the surface of the linear quantum well intermixing region 122 is just flush with the surface of the non-quantum well intermixing region 121.
In actual production, due to the fact that the surface splicing of the quantum well intermixing region 122 and the non-quantum well intermixing region 121 has a deviation caused by operation errors or equipment errors, the error value of the distance between the surface of the quantum well intermixing region 122 and the surface of the non-quantum well intermixing region 121 is set to be 2 μm, and the detection chip 12 can be conveniently screened only by meeting the condition.
Referring to fig. 9, fig. 9 is a schematic structural diagram of an embodiment of the detection system of the present application. As shown in fig. 9, the inspection system 1 includes a laser light source 20, a light processing system 30, a spectrometer 40, an imaging system 50, a USB data line 60, and a semiconductor stage 70. The light handling system 30 comprises a light collector 31 and a light conductor 32. The imaging system 50 is a computer with data processing software.
The semiconductor wafer 11 is carried on the semiconductor worktable 70, the laser source 20 generates a laser beam and irradiates the detection chip 12 on the semiconductor wafer 11; the detection chip 12 in the semiconductor wafer 11 receives the laser beam to generate photoluminescence reaction and emits light outwards; the light collector 31 collects light emitted by the detection chip 12, the light transmission piece 32 transmits the light to the spectrometer 40, and the spectrometer 40 detects the collected light and measures the light to obtain a wavelength spectral line of the detection chip 12; the imaging system 50 is connected to the spectrometer 40 through the USB data line 60, and images the wavelength spectrum data acquired from the spectrometer 40, and displays the blue shift of the wavelength spectrum on the display screen to determine the anti-COD characteristic of the semiconductor wafer 11.
Alternatively, in other embodiments, other connections with data transmission may be used to connect imaging system 50 and spectrometer 40.
Among them, COD (catastrophic optical damage) includes cob (catastrophic optical body damage) or COMD (catastrophic optical mirror damage), the cob d is mainly caused by the internal structural damage of the semiconductor wafer 11, and the COMD is mainly caused by the mirror damage of the optical cavity of the semiconductor device.
Different from the method of using a dummy wafer to perform the measurement after the plating layer and the thermal treatment in the prior art, in the embodiment, the detection chip 12 is embedded into the semiconductor wafer 11, and the detection chip 12 is used to receive the laser beam to generate the photoluminescence reaction, so that the COD resistance of the semiconductor wafer 11 is detected without using other detection equipment to determine whether the COMD exists, thereby effectively improving the detection efficiency and reducing the detection cost. Before the semiconductor wafer 11 is cut to form the laser chips 13, the COD resistance of the semiconductor wafer 11 is detected in this embodiment, so that the problem can be found in time, the process of the semiconductor wafer 11 can be adjusted, the quality of the semiconductor wafer 11 can be improved, the rejection rate can be reduced, and the production cost can be reduced.
The above embodiments are merely examples, and not intended to limit the scope of the present application, and all modifications, equivalents, and flow charts using the contents of the specification and drawings of the present application, or those directly or indirectly applied to other related arts, are included in the scope of the present application.

Claims (10)

1. A detection chip, wherein the detection chip is embedded in a semiconductor wafer body for performing photoluminescence testing, the detection chip comprises:
and the quantum well intermixing region and the non-quantum well intermixing region are arranged periodically or randomly, wherein the particle doping of the quantum well intermixing region is the same as the particle doping of the quantum well doping layer contained in the semiconductor wafer body.
2. The detection chip of claim 1, wherein the quantum well intermixed regions are test lines, and the test lines alternate with the non-quantum well intermixed regions.
3. The detection chip according to claim 2, wherein the quantum well intermixed regions are arranged linearly, and the distance between any adjacent quantum well intermixed regions is equal or unequal.
4. The detection chip according to claim 1, wherein the quantum well intermixed region is a test pattern, the non-quantum well intermixed region is disposed around the test pattern, and a plurality of the test patterns are arranged in a matrix.
5. The test chip of claim 4, wherein the test pattern comprises at least one of a square, a circle, a triangle, or a polygon.
6. The detection chip of claim 1, wherein a total area of the quantum well intermixed regions is 0.5mm2-1.5mm2。
7. The detection chip of claim 6, wherein a ratio of a total area of the plurality of quantum well intermixed regions to a total area of the plurality of non-quantum well intermixed regions is in a range of 5-10.
8. The detection chip of claim 1, wherein a distance between a surface of the quantum well intermixed region and a surface of the non-quantum well intermixed region is less than 2 μ ι η.
9. The detecting chip of claim 1, wherein the detecting chip further comprises at least one alignment mark for alignment.
10. An inspection system for testing the inspection chip of any one of claims 1 to 9, comprising:
a semiconductor work table;
the laser light source is used for generating laser beams, and the laser beams irradiate the detection chip carried on the semiconductor workbench so as to enable the detection chip to generate photoluminescence reaction and emit light;
the spectrometer receives the light rays through the optical processing system, detects the light rays and measures the wavelength spectral line of the detection chip;
and the imaging system is connected with the spectrometer through a USB data line, images the wavelength spectral line and displays the blue shift condition of the wavelength spectral line so as to judge the anti-COD characteristic of the semiconductor wafer.
CN202010900245.5A 2020-08-31 2020-08-31 Detection chip and detection system Pending CN114121698A (en)

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JP3911140B2 (en) * 2001-09-05 2007-05-09 シャープ株式会社 Manufacturing method of semiconductor laser
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